WO2016028370A1 - Germanium chemical mechanical polishing - Google Patents

Germanium chemical mechanical polishing Download PDF

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Publication number
WO2016028370A1
WO2016028370A1 PCT/US2015/036222 US2015036222W WO2016028370A1 WO 2016028370 A1 WO2016028370 A1 WO 2016028370A1 US 2015036222 W US2015036222 W US 2015036222W WO 2016028370 A1 WO2016028370 A1 WO 2016028370A1
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Prior art keywords
groups
polymer
germanium
cmp
amino acid
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PCT/US2015/036222
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English (en)
French (fr)
Inventor
Chih-Pin Tsai
Ming-Chih Yeh
Glenn WHITENER
Lung-Tai LU
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Cabot Microelectronics Corporation
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Application filed by Cabot Microelectronics Corporation filed Critical Cabot Microelectronics Corporation
Priority to CN201580045242.5A priority Critical patent/CN106574171B/zh
Priority to JP2017510574A priority patent/JP6603309B2/ja
Priority to KR1020177007354A priority patent/KR102444550B1/ko
Publication of WO2016028370A1 publication Critical patent/WO2016028370A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • This invention relates to chemical mechanical polishing (CMP) compositions and methods. More particularly, this invention relates to a method for CMP removal of
  • compositions and methods for CMP of the surface of a substrate are well known in the art.
  • Compositions for chemical mechanical polishing/planarizing various substrates also known as polishing slurries, CMP slurries, and CMP compositions
  • semiconductor substrates in integrated circuit manufacture typically contain an abrasive, various additive compounds, and the like.
  • a substrate carrier or polishing head is mounted on a carrier assembly and positioned in contact with a polishing pad in a CMP apparatus.
  • the carrier assembly provides a controllable pressure to the substrate, urging the substrate against the polishing pad.
  • the pad and carrier, with its attached substrate are moved relative to one another.
  • the relative movement of the pad and substrate serves to abrade the surface of the substrate to remove a portion of the material from the substrate surface, thereby polishing the substrate.
  • the polishing of the substrate surface typically is further aided by the chemical activity of the polishing composition (e.g., by oxidizing agents, acids, bases, or other additives present in the CMP composition) and/or the mechanical activity of an abrasive suspended in the polishing composition.
  • Typical abrasive materials include silicon dioxide, cerium oxide, aluminum oxide, zirconium oxide, and tin oxide.
  • Germanium is a useful semiconductor material in advanced metal oxide
  • MOS semiconductor
  • IC integrated circuits
  • STI shallow trench isolation
  • germanium oxides are highly soluble, resulting in high static etching rates (SER) in the presence of oxidants such as hydrogen peroxide.
  • SER static etching rates
  • CMP compositions comprising hydrogen peroxide or other oxidants, which can severely limit options for advanced IC design using germanium.
  • Cationic surfactants have been evaluated in the past as
  • germanium etching inhibitors however, such materials lead to foaming problems during CMP, which severely limits their practical usefulness.
  • the methods described herein address the etching and dishing problems associated with germanium CMP by utilizing certain germanium etching inhibitor materials in the CMP slurries, which do not suffer from the foaming problems of cationic surfactants and which provide suitably low roughness surfaces for advanced germanium IC applications with minimal dishing.
  • a method of planarizing/polishing germanium comprises the step of abrading the surface of a substrate comprising germanium with an aqueous CMP composition comprising an oxidizing agent (e.g., about 0.5 to about 4 percent by weight (wt%) hydrogen peroxide), a particulate abrasive such as colloidal silica (e.g., at a concentration in the range of about 0.1 to about 5 wt%, preferably about 0.5 to about 3 wt%), and a germanium etching inhibitor.
  • the germanium etching inhibitor is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof.
  • the water-soluble polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof. These groups can be substituents situated along the polymer backbone (e.g., a hydrocarbon, ester, amide, or ether backbone), can form part of the polymer backbone (e.g., as in some polyimides), or both.
  • the polymer comprises basic nitrogen groups selected from primary amino groups, secondary amino groups, tertiary amino groups, quaternary amino groups, and a combination of two or more thereof, and/or basic nitrogen heterocyclic groups, such as pyridine, imidazole, or quaternized versions thereof.
  • hydrocarbon e.g., "polyvinyl” or “polyolefm” backbone, e.g., polyacrylamide compounds, wherein each R independently is a hydrocarbon moiety (e.g., lower alkyl, such as methyl, ethyl, propyl, etc.).
  • the polymer can comprise amide groups and basic nitrogen groups.
  • Non-limiting examples of such materials include ⁇ - polyacrylamide (PAM), poly(N-isopropylacrylamide) (PNIPAM), PAM copolymers, and the like.
  • Useful cationic polymers include one or more polymers selected from the group consisting of a poly(diallyldimethylammonium) halide such as
  • polyDADMAC poly(diallyldimethylammonium) chloride
  • poly(methacryloyloxyethyltrimethylammonium) halide such as
  • polyMADQUAT poly(methacryloyloxyethyltrimethylammonium) chloride
  • the cationic polymer can comprise both amide groups and basic nitrogen groups, e.g., as in a copolymer of acrylamide (AAm) and DADMAC, such as polyAAm-co- DADMAC.
  • the polymer is present in the CMP composition at a concentration in the range of about 10 to about 2000 parts-per-million (ppm).
  • the amino acid-based germanium etching inhibitors are amino acids that have non- acidic side chain.
  • the amino acids preferably have a basic side chain, a hydrophobic side chain, and/or have an isoelectric point of 6 or greater.
  • Non-limiting examples of such amino acids include lysine, arginine, histidine, glycine, beta-alanine, valine, and N-(2- hydroxy-l,l-bis(hydroxymethyl) ethyl)glycine) also known as tricine.
  • the amino acid is present in the composition at a concentration in the range of about 50 to about 5000 ppm.
  • Bis-pyridine-type Ge etching inhibitors are compounds comprising two pyridine groups linked together via a covalent bond (i.e., bipyridyl compounds) or through a 1 to 3 carbon linking group.
  • the Ge etching inhibitor comprises at least one compound selected from the group consisting of 4,4'-trimethylenedipyridine, l,2-bis(4- pyridyl)ethane, 2,2'-bipyridyl, and l,2-bis(2-pyridyl)ethylene.
  • the bis-pyridine compound, if utilized, is present in the composition at a concentration in the range of about 50 to about 5000 ppm.
  • the particulate abrasive e.g., colloidal silica
  • the CMP composition comprises about 0.5 to about 3 wt% of the abrasive (e.g., colloidal silica), and about 50 to about 5000 ppm of the amino acid.
  • the CMP composition comprises about 0.5 to about 3 wt% of the abrasive (e.g., colloidal silica), and about 50 to about 5000 ppm of the amino acid.
  • composition comprises about 0.5 to about 3 wt% of the abrasive (e.g., colloidal silica), about 10 to about 1000 ppm of the polymer, and about 50 to about 5000 ppm of the amino acid.
  • abrasive e.g., colloidal silica
  • FIG. 1 provides a graph comparing the Ge static etch rate (SER) observed for CMP compositions containing various polymer-type Ge etching inhibitor compounds.
  • SER Ge static etch rate
  • FIG. 2 provides graphs of Ge SER, as well as removal rates for Ge and silicon oxide (Ox), and selectivity for Ge/Ox observed for CMP compositions comprising various concentrations of polyMADQUAT (ALCO 4773).
  • FIG. 3 provides a graph comparing the Ge static etch rate (SER) observed for CMP compositions containing various amino acid and pyridine Ge etching inhibitor compounds.
  • SER Ge static etch rate
  • the CMP compositions useful in the methods described herein include an oxidant (e.g., hydrogen peroxide), a particulate abrasive (e.g., colloidal silica and the like), and a germanium etching inhibitor (e.g., a water soluble nonionic polymer, a water-soluble cationic polymer, and amino acid, a bis-pyridine compound, or a combination of two or more thereof) in an aqueous carrier.
  • an oxidant e.g., hydrogen peroxide
  • a particulate abrasive e.g., colloidal silica and the like
  • a germanium etching inhibitor e.g., a water soluble nonionic polymer, a water-soluble cationic polymer, and amino acid, a bis-pyridine compound, or a combination of two or more thereof
  • Oxidizing agents useful in compositions and methods described herein include, e.g., hydrogen peroxide, ammonium persulfate, potassium permanganate, and the like. Hydrogen peroxide is the preferred oxidizing agent.
  • the oxidizing agent e.g. hydrogen peroxide
  • the oxidizing agent is present in the composition at a concentration in the range of about 0.1 to about 4 wt%, more preferably about 0.5 to about 3.5 wt%), at the point of use (i.e., diluted for use in the polishing process).
  • water-soluble refers to polymers that dissolve in water, or are dispersible in water, to form substantially clear, transparent dispersions.
  • the water- soluble polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, mide groups, or a combination thereof.
  • the polymer comprises basic nitrogen groups selected from primary amino groups, secondary amino groups, tertiary amino groups, quaternary amino groups, and a combination of two or more thereof, and/or basic nitrogen heterocyclic groups, such as pyridine, imidazole, or quatemized versions thereof.
  • the polymer can comprise carbonamide groups and basic nitrogen groups.
  • Non-limiting examples of such materials include, polyacrylamide (PAM), poly(N-isopropylacrylamide) (PNIPAM), PAM copolymers, and the like.
  • Cationic polymers useful as germanium etching inhibitors in the compositions and methods described herein include homopolymers of cationic monomers, e.g., a
  • poly(diallyldimethylammonium) halide such as poly(diallyldimethylammonium) chloride (polyDADMAC), a poly(methacryloyloxyethyltrimethylammonium) halide such as
  • the cationic polymer can be a copolymer of cationic and nonionic monomers (e.g., alkylacrylates, alkylmethacrylates, acrylamide, styrene, and the like), such as poly(acrylamide- co-diallyldimethylammonium) chloride (polyAAm-DADMAC), and poly(dimethylamine-co- epichlorohydrin-co-ethylenediamine) (polyDEE).
  • cationic polymer include polyethyleneimine, ethoxylated polyethyleneimine,
  • a preferred cationic polymer for use in the CMP compositions of the invention is a poly(methacryloyloxy ethyl
  • trimethylammonium) halide e.g., the chloride
  • polyMADQUAT such as ALCO 4773, which is commercially available from Alco Chemical Inc.
  • the cationic polymer can include nitrogen-heteroaryl or quaternized nitrogen-heteroaryl groups, i.e., heteroaromatic compounds comprising at least one nitrogen in an aromatic ring, optionally having at least one of the nitrogen atoms in the ring alkylated to impart a formal positive charge on the heteroaryl ring (e.g., on a nitrogen in the ring).
  • nitrogen-heteroaryl or quaternized nitrogen-heteroaryl groups i.e., heteroaromatic compounds comprising at least one nitrogen in an aromatic ring, optionally having at least one of the nitrogen atoms in the ring alkylated to impart a formal positive charge on the heteroaryl ring (e.g., on a nitrogen in the ring).
  • the heteroaryl group is attached to the backbone of the polymer through a carbon-carbon bond (e.g., as in a quaternized poly(vinylpyridine) polymer) or a carbon- nitrogen bond (e.g., as in a quaternized poly(vinylimidazole) polymer) either directly to the aromatic ring or through an alkylene spacer group (e.g., methylene (CH 2 ) or ethylene
  • a counter anion which can be, e.g., a halide (e.g., chloride), nitrate, methylsulfate, or any combination of anions.
  • the cationic polymer comprises, consists essentially of, or consists of a poly(vinyl-N-alkylpyridinium) polymer, such as a poly(2-vinyl-N- alkylpyridinium) polymer, a poly(4-vinyl-N-alkylpyridinium) polymer, a vinyl-N- alkylpyridinium copolymer, a poly(Nl-vinyl-N3-alkylimidazolium) polymer, and the like.
  • a poly(vinyl-N-alkylpyridinium) polymer such as a poly(2-vinyl-N- alkylpyridinium) polymer, a poly(4-vinyl-N-alkylpyridinium) polymer, a vinyl-N- alkylpyridinium copolymer, a poly(Nl-vinyl-N3-alkylimidazolium) polymer, and the like.
  • the polymer preferably is present in the CMP composition at a concentration of about 10 to about 2000 ppm (more preferably bout 10 to about 1000), at point of use in a polishing method as described herein.
  • the molecular weight of the polymer is not limited, but typically, the polymer has a weight average molecular weight of about 5 kDa or more (e.g., about 10 kDa or more, about 20 kDa or more, about 30 kDa or more, about 40 kDa or more, about 50 kDa or more, or about 60 kDa or more) cationic polymer.
  • the polishing composition preferably comprises a polymer having a molecular weight of about 100 kDa or less (e.g., about 80 kDa or less, about 70 kDa or less, about 60 kDa or less, or about 50 kDa or less).
  • the polishing composition comprises a polymer having a molecular weight of about 5 kDa to about 100 kDa (e.g., about 10 kDa to about 80 kDa, about 10 kDa to about 70 kDa, or about 15 kDa to about 70 kDa.
  • Amino acids useful as germanium etching inhibitors in the compositions and methods described herein include amino acids that have non-acidic side chains.
  • the amino acid comprises a basic side chain, such as e.g., lysine, arginine, and histidine.
  • the amino acid has a hydrophobic side chain (e.g., alanine, leucine, isoleucine, valine, phenylglycine).
  • the amino acid is selected from amino acids having an isoelectric point of 6 or greater (e.g., lysine, arginine, histidine, glycine, beta-alanine, valine, and the like).
  • the amino acid does not include a sulfur-containing side chain (e.g., methionine, cysteine, or cystine).
  • a sulfur-containing side chain e.g., methionine, cysteine, or cystine
  • examples of some preferred amino acids include, e.g., lysine, arginine, histidine, glycine, beta-alanine, tricine, and valine.
  • the amino acid is present in the composition at a concentration in the range of about 50 to about 5000 ppm.
  • Bis-pyridine-type Ge etching inhibitors are compounds comprising two pyridine groups linked together via a covalent bond (i.e., bipyridyl compounds) or through a 1 to 3 carbon linking group, e.g., compounds of the formula Pyr-R'-Pyr, in which Pyr is a pyridine group, which can be substituted (e.g., with an alkyl group) or unsubstituted. Each Pyr independently is attached to R' at the 2, 3, or 4 position of the pyridine ring.
  • Non- limiting examples of bis-pyridine-type Ge etching inhibitors include, e.g., 4,4'-trimethylenedipyridine, 1 ,2-bis(4-pyridyl)ethane, 2,2'-bipyridyl, l,2-bis(2- pyridyl)ethylene, and the like.
  • the bis-pyridine compound, if utilized, is present in the composition at a concentration in the range of about 50 to about 5000 ppm.
  • the particulate abrasive can comprise any abrasive material suitable for use in CMP of semiconductor and integrated circuit materials. Examples of such materials include, e.g., silica, ceria, zirconia, and titania.
  • a preferred particulate abrasive is silica (e.g., colloidal silica).
  • the particulate abrasive has a mean particle size of about 20 to about 200 nm.
  • Preferred colloidal silica has a mean particle size of about 60 to about 150 nm (e.g., about 120 nm).
  • the abrasive e.g., colloidal silica
  • the CMP composition at a concentration of about 0.2 to about 3 wt% (e.g., about 0.4 to about 2 wt%), at point of use.
  • the colloidal silica particles can have any shape. In some embodiments the colloidal silica particles are generally spherical, cocoon-shaped, or a combination thereof.
  • the colloidal silica can include additional cationic materials (e.g., quaternary amines) on the surface of the silica particles to impart a positive zeta potential to the surface.
  • the CMP compositions of the present invention can have any pH, but preferably have a pH in the range of about 1.5 to about 9 (e.g., about 2 to about 5).
  • the pH of the composition can be achieved and/or maintained by inclusion of a buffering material, as is well known to those of ordinary skill in the chemical arts.
  • the polishing compositions of the invention optionally also can include suitable amounts of one or more other additive materials commonly included in polishing compositions, such as metal complexing agents, dispersants, corrosion inhibitors, viscosity modifying agents, biocides, inorganic salts, and the like.
  • the composition can include a biocide such as KATHON, KORDEK, or NEOLONE biocides; a complexing agent such as acetic acid, picolinic acid, tartaric acid, iminodiacetic acid, benzoic acid, nitrilotriacetic acid (NTA), and the like; and/or a corrosion inhibitor such as benzotriazole (BTA), 1,2,3-triazole, 1,2,4-traizole, a tetrazole, 5-aminotetrazole, 3-amino-l,2,4-triazole, phenylphosphonic acid,
  • a biocide such as KATHON, KORDEK, or NEOLONE biocides
  • a complexing agent such as acetic acid, picolinic acid, tartaric acid, iminodiacetic acid, benzoic acid, nitrilotriacetic acid (NTA), and the like
  • a corrosion inhibitor such as benzotriazole (BTA), 1,2,3-tri
  • the aqueous carrier can be any aqueous solvent, e.g., water, aqueous methanol, aqueous ethanol, a combination thereof, and the like.
  • the aqueous carrier comprises predominately deionized water.
  • the polishing compositions used in the methods described herein can be prepared by any suitable technique, many of which are known to those skilled in the art.
  • the polishing composition can be prepared in a batch or continuous process.
  • the polishing composition can be prepared by combining the components thereof in any order.
  • component includes individual ingredients (e.g., abrasive, polymer, amino acid, buffers, and the like), as well as any combination of ingredients.
  • the abrasive can be dispersed in water, combined with the etching inhibitor components, and mixed by any method that is capable of incorporating the components into the polishing composition.
  • the oxidizing agent is not added to the polishing composition until the composition is ready for use in a CMP process.
  • the oxidizing agent can be added just prior to initiation of polishing.
  • the pH can be further adjusted at any suitable time by addition of an acid, base, or buffer, as needed.
  • the polishing compositions of the present invention also can be provided as a concentrate, which is intended to be diluted with an appropriate amount of aqueous solvent (e.g., water) prior to use.
  • the polishing composition concentrate can include the various components dispersed or dissolved in aqueous solvent in amounts such that, upon dilution of the concentrate with an appropriate amount of aqueous solvent, each component of the polishing composition will be present in the polishing composition in an amount within the appropriate range for use.
  • the compositions and methods of the invention surprisingly provide low surface roughness and significant reductions in SER (e.g., 80% or greater reductions in SER) compared to similar CMP slurry formulations that do not contain the etching inhibitor materials.
  • the CMP methods of the invention preferably are achieved using a chemical- mechanical polishing apparatus.
  • the CMP apparatus comprises a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, and/or circular motion, a polishing pad in contact with the platen and moving relative to the platen when in motion, and a carrier that holds a substrate to be polished by contacting and moving relative to the surface of the polishing pad.
  • the polishing of the substrate takes place by the substrate being placed in contact with the polishing pad and a polishing composition of the invention and then moving the polishing pad relative to the substrate, so as to abrade at least a portion of the substrate to polish the substrate.
  • This example illustrates the effect of selected cationic and nonionic polymers on Ge SER and removal rates.
  • Ge blanket wafers with (100) preferred orientation were planarized with aqueous CMP slurries (at a pH of about 2.3) comprising about 2 wt% colloidal silica, 2 wt% hydrogen peroxide, and various polymer additives at a concentration of 100 ppm.
  • the Ge removal rates (RR) and static etch rates (SER) were evaluated.
  • Planarization was accomplished on a POLI 500 brand polisher using an ICIOIO brand polishing pad at a platen speed of about 60 rpm, a carrier speed of about 63 rpm, a down force of about 1.5 psi, and a slurry flow rate of about 100 mL/minute; polishing time: 60 seconds.
  • SER was determined by dipping the wafers in 35° C and 45° C slurries with oxidizer present, for two minutes.
  • PAAM-DADMAC PAAM-DADMAC
  • the polymers all provided surprising reductions in Ge SER in the range of about 84 to 94%.
  • Ge removal rates and SER were evaluated for slurries comprising 2 wt% of commercially available colloidal silica (cocoon-shaped particles, primary particle size of about 30 to 35 nm, secondary particle size of about 70 nm, cationic surface- modified), 2 wt% hydrogen peroxide, and 0 to 1000 ppm of polyMADQUAT.
  • the slurries were evaluated for PETEOS silicon oxide removal rates, and for the selectivity of Ge:Ox (Ge removal versus silicon oxide removal).
  • Planarization was accomplished on a POLI 500 brand polisher using an ICIOIO brand polishing pad at a platen speed of about 60 rpm, a carrier speed of about 63 rpm, a down force of about 1.5 psi, and a slurry flow rate of about 100 mL/minute; polishing time: 60 seconds.
  • SER was determined by dipping the wafers in 35° C and 45° C slurries with oxidizer present, for two minutes. The results are shown in FIG. 2.
  • Ge blanket wafers with (100) preferred orientation were planarized with CMP slurries comprising 2 wt% commercially available colloidal silica (cocoon-shaped particles, primary particle size of about 30 to 35 nm, secondary particle size of about 70 nm, cationic surface-modified), 2 wt% hydrogen peroxide, and various amino acid and pyridine additives, i.e., 1000 ppm of lysine, D,L-methionine, arginine, histidine, and 4,4'-trimethylenedipyridine; and 100 ppm of glycine, beta-alanine, valine, aspartic acid, glutamic acid, phenylalanine, and N-(2-hydroxy-l ,l-bis(hydroxymethyl)ethyl)glycine (also known as tricine).
  • CMP slurries comprising 2 wt% commercially available colloidal silica (cocoon-shaped particles, primary particle size of about 30 to 35
  • Planarization was accomplished on a POLI 500 brand polisher using an ICIOIO brand polishing pad at a platen speed of about 60 rpm, a carrier speed of about 63 rpm, a down force of about 1.5 psi, and a slurry flow rate of about 100 mL/minute; polishing time: 60 seconds.
  • SER was determined by dipping the wafers in 35° C and 45° C slurries with oxidizer present, for two minutes. The SER results are provided in FIG. 3, reported as normalized SER as a percentage of the SER obtained using a slurry without any polymer additive.
  • This example illustrates the effects of lysine, arginine and polyMADQUAT on Ge removal (RR) and Ge SER.
  • Ge blanket wafers with (100) preferred orientation were planarized with aqueous CMP slurries (at a pH of about 2.3) comprising colloidal silica, hydrogen peroxide, and various combinations of polyMADQUAT (ALCO 4773), lysine and arginine.
  • the Ge removal rates (RR) and static etch rates (SER) were evaluated.
  • Planarization was accomplished on a POLI 500 brand polisher using an ICIOIO brand polishing pad at a platen speed of about 60 rpm, a carrier speed of about 63 rpm, a down force of about 1.5 psi, and a slurry flow rate of about 100 mL/minute; polishing time: 60 seconds.
  • SER was determined by dipping the wafers in 35° C and 45° C slurries with oxidizer present, for two minutes.
  • Table 2 provides a summary of the colloidal silica materials used and silica concentrations, the amino acids and concentration thereof, the polymer concentration, and the hydrogen peroxide concentration, as well as the observed germanium SER and RR.
  • Preferred target SER and RR are ⁇ 100 A/min and 200- 2000 A/min, respectively.
  • PS nominal primary particle size of cationic surface-modified colloidal silica, in nm
  • compositions and methods that "consist essentially of or “consist of specified components or steps, in addition to compositions and methods that include other components or steps beyond those listed in the given claim or portion of the specification. Recitation of ranges of values herein are merely intended to serve as a shorthand method of referring individually to each separate value falling within the range, unless otherwise indicated herein, and each separate value is incorporated into the specification as if it were individually recited herein.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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PCT/US2015/036222 2014-08-22 2015-06-17 Germanium chemical mechanical polishing WO2016028370A1 (en)

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CN201580045242.5A CN106574171B (zh) 2014-08-22 2015-06-17 锗的化学机械抛光
JP2017510574A JP6603309B2 (ja) 2014-08-22 2015-06-17 ゲルマニウムの化学機械研磨
KR1020177007354A KR102444550B1 (ko) 2014-08-22 2015-06-17 게르마늄 화학적 기계적 연마

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US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
JP2021089906A (ja) * 2018-03-22 2021-06-10 株式会社フジミインコーポレーテッド ゲルマニウム溶解抑制剤
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
JP7409899B2 (ja) * 2020-02-18 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法
KR102455159B1 (ko) * 2020-07-17 2022-10-18 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
KR20220130544A (ko) * 2021-03-18 2022-09-27 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
CN115516605A (zh) * 2021-04-20 2022-12-23 昭和电工材料株式会社 Cmp研磨液及研磨方法
WO2023049317A1 (en) * 2021-09-23 2023-03-30 Cmc Materials, Inc. Silica-based slurry compositions containing high molecular weight polymers for use in cmp of dielectrics

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US20160053381A1 (en) 2016-02-25

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