JP2017524492A - シェービング用カミソリのシリコン刃の製造方法 - Google Patents
シェービング用カミソリのシリコン刃の製造方法 Download PDFInfo
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- JP2017524492A JP2017524492A JP2017518046A JP2017518046A JP2017524492A JP 2017524492 A JP2017524492 A JP 2017524492A JP 2017518046 A JP2017518046 A JP 2017518046A JP 2017518046 A JP2017518046 A JP 2017518046A JP 2017524492 A JP2017524492 A JP 2017524492A
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- razor
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- silicon wafer
- razor blade
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title abstract description 58
- 239000010703 silicon Substances 0.000 title abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 51
- 238000005520 cutting process Methods 0.000 claims abstract description 50
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 17
- 230000000873 masking effect Effects 0.000 claims description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 claims description 3
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 3
- 239000003610 charcoal Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 18
- 238000000576 coating method Methods 0.000 abstract description 18
- 239000002210 silicon-based material Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 69
- 239000010410 layer Substances 0.000 description 37
- 239000000463 material Substances 0.000 description 12
- 239000011247 coating layer Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 206010040880 Skin irritation Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000036556 skin irritation Effects 0.000 description 1
- 231100000475 skin irritation Toxicity 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26B—HAND-HELD CUTTING TOOLS NOT OTHERWISE PROVIDED FOR
- B26B21/00—Razors of the open or knife type; Safety razors or other shaving implements of the planing type; Hair-trimming devices involving a razor-blade; Equipment therefor
- B26B21/40—Details or accessories
- B26B21/4068—Mounting devices; Manufacture of razors or cartridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26B—HAND-HELD CUTTING TOOLS NOT OTHERWISE PROVIDED FOR
- B26B21/00—Razors of the open or knife type; Safety razors or other shaving implements of the planing type; Hair-trimming devices involving a razor-blade; Equipment therefor
- B26B21/54—Razor-blades
- B26B21/58—Razor-blades characterised by the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26B—HAND-HELD CUTTING TOOLS NOT OTHERWISE PROVIDED FOR
- B26B21/00—Razors of the open or knife type; Safety razors or other shaving implements of the planing type; Hair-trimming devices involving a razor-blade; Equipment therefor
- B26B21/54—Razor-blades
- B26B21/58—Razor-blades characterised by the material
- B26B21/60—Razor-blades characterised by the material by the coating material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (15)
- 少なくとも1つのカミソリ刃を製造する方法であって、
{111}平面が単結晶性シリコンウェハに対して平行及び垂直である{100}表面と交差する角度で、前記{100}表面を含む前記単結晶性シリコンウェハを位置合わせする工程と、
前記単結晶性シリコンウェハをエッチングして{111}平面及び第2平面を露出させて、約19.5°の刃先角〜約35.3°の刃先角を有する少なくとも1つの刃先を提供する工程と、
前記少なくとも1つの刃先上に少なくとも1つの内層を塗布する工程と、
前記少なくとも1つの内層の沈着後、約20ナノメートル〜約100ナノメートルの、前記少なくとも1つの刃先の曲率半径を提供する工程と、
前記少なくとも1つの刃先上に少なくとも1つの外層を塗布する工程と、
前記単結晶性シリコンウェハから前記少なくとも1つの刃先を除去する工程と、
を含む方法。 - 前記第2平面は、{110}平面又は{552}平面である、請求項1に記載の方法。
- 前記位置合わせする工程の前に、マスキング層を前記単結晶性シリコンウェハに塗布する工程を更に含む、請求項1に記載の方法。
- 前記マスキング層をパターン化して、前記少なくとも1つのカミソリ刃のプロファイルを画定する工程を更に含む、請求項3に記載の方法。
- 前記少なくとも1つの内層は、ダイヤモンド、ダイヤモンド様炭素、非晶質ダイヤモンド、窒化ホウ素、窒化ニオブ、窒化ケイ素、窒化クロム、窒化ジルコニウム、窒化チタン、炭化ケイ素、アルミナ、ジルコニア、又はこれらの任意の組み合わせを含み、前記少なくとも1つの外層は、ポリテトラフルオロエチレンを含む、請求項1に記載の方法。
- 前記少なくとも1つの内層を塗布する前に、前記マスキング層を除去する工程を更に含む、請求項3又は4に記載の方法。
- 前記少なくとも1つの外層を塗布する前に、第2マスキング層を塗布する工程を更に含む、請求項3又は4に記載の方法。
- 前記少なくとも1つの内層は、前記単結晶性シリコンウェハから前記少なくとも1つのカミソリ刃を除去した後に塗布される、請求項1に記載の方法。
- 前記少なくとも1つの内層は、前記単結晶性シリコンウェハから前記少なくとも1つのカミソリ刃を除去する前に塗布され、前記少なくとも1つの内層は、最初に、前記少なくとも1つのカミソリ刃の第1側に塗布され、次に、前記第1側と反対側の前記少なくとも1つのカミソリ刃の第2側に塗布される、請求項1に記載の方法。
- 前記少なくとも1つのカミソリ刃の表面粗さの変動は、約100ナノメートル〜200ナノメートルである、請求項1に記載の方法。
- 前記単結晶性シリコンウェハ上に少なくとも1つの刃ボックスを形成する工程を更に含み、各々が、複数のカミソリ刃及び前記複数のカミソリ刃を囲む周辺部を含む、請求項1に記載の方法。
- 前記少なくとも1つのカミソリ刃をカミソリカートリッジハウジング内に配置する工程を更に含む、請求項1に記載の方法。
- 前記少なくとも1つの刃ボックスをカミソリカートリッジ内に配置する工程を更に含む、請求項11に記載の方法。
- 請求項1に記載の方法を使用して形成される、カミソリ刃。
- 請求項1に記載の方法を使用して形成される、カミソリカートリッジ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/306,702 | 2014-06-17 | ||
US14/306,702 US9808944B2 (en) | 2014-06-17 | 2014-06-17 | Methods of manufacturing silicon blades for shaving razors |
PCT/US2015/035910 WO2015195591A1 (en) | 2014-06-17 | 2015-06-16 | Methods of manufacturing silicon blades for shaving razors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017524492A true JP2017524492A (ja) | 2017-08-31 |
JP6356910B2 JP6356910B2 (ja) | 2018-07-11 |
Family
ID=53443060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017518046A Active JP6356910B2 (ja) | 2014-06-17 | 2015-06-16 | シェービング用カミソリのシリコン刃の製造方法 |
Country Status (12)
Country | Link |
---|---|
US (1) | US9808944B2 (ja) |
EP (1) | EP3158113B1 (ja) |
JP (1) | JP6356910B2 (ja) |
CN (1) | CN106457585B (ja) |
AU (1) | AU2015277430A1 (ja) |
BR (1) | BR112016029455B1 (ja) |
CA (1) | CA2952063A1 (ja) |
MX (1) | MX2016016221A (ja) |
RU (1) | RU2016147228A (ja) |
SG (1) | SG11201609565SA (ja) |
WO (1) | WO2015195591A1 (ja) |
ZA (1) | ZA201608342B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102211395B1 (ko) * | 2019-05-22 | 2021-02-03 | 주식회사 도루코 | 면도날 및 면도날 제조방법 |
Citations (6)
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JPH119857A (ja) * | 1997-06-10 | 1999-01-19 | Warner Lambert Co | カミソリ刃及びその製造方法 |
JP2002542000A (ja) * | 1999-04-23 | 2002-12-10 | ザ ジレット カンパニー | 安全カミソリ |
WO2002098619A1 (fr) * | 2001-05-28 | 2002-12-12 | Matsushita Electric Works, Ltd. | Lame de rasoir |
US6615496B1 (en) * | 2000-05-04 | 2003-09-09 | Sandia Corporation | Micromachined cutting blade formed from {211}-oriented silicon |
JP2004141360A (ja) * | 2002-10-23 | 2004-05-20 | Mitsuchika Saito | 単結晶材料刃、単結晶材料刃を備えた刃物および単結晶材料刃の製造方法 |
WO2007092852A2 (en) * | 2006-02-06 | 2007-08-16 | Mynosys Cellular Devices, Inc. | Microsurgical cutting instruments |
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US3834265A (en) * | 1973-02-16 | 1974-09-10 | Gillette Co | Ceramic cutting instruments |
US4534827A (en) * | 1983-08-26 | 1985-08-13 | Henderson Donald W | Cutting implement and method of making same |
AU625072B2 (en) * | 1988-07-13 | 1992-07-02 | Warner-Lambert Company | Shaving razors |
US5018274A (en) * | 1990-04-05 | 1991-05-28 | The Gillette Company | Safety razor blade |
DE69230822T2 (de) * | 1991-04-26 | 2000-12-07 | Gilette Co N D Ges Des Staates | Rasierklinge |
IL138710A0 (en) * | 1999-10-15 | 2001-10-31 | Newman Martin H | Atomically sharp edge cutting blades and method for making same |
US6684513B1 (en) * | 2000-02-29 | 2004-02-03 | The Gillette Company | Razor blade technology |
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CN1863940B (zh) | 2003-09-17 | 2010-08-18 | 贝克顿·迪金森公司 | 手术和非手术应用的硅刀片 |
US7059054B2 (en) * | 2003-12-24 | 2006-06-13 | Honeywell International Inc. | Cutting blades having pointed tip, ultra-sharp edges, and ultra-flat faces |
EP2095780A4 (en) * | 2006-12-08 | 2010-01-13 | Mani Inc | SURGICAL SCALPEL, SURGICAL SCALE AND METHOD FOR THE PRODUCTION THEREOF AND SURGICAL SKALPELL HANDLE |
US20080155839A1 (en) * | 2006-12-21 | 2008-07-03 | Anderson Mark C | Cutting tools made of an in situ composite of bulk-solidifying amorphous alloy |
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US20160016322A1 (en) | 2013-03-15 | 2016-01-21 | The Regents Of The University Of California | Blade with a varying cutting angle |
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2014
- 2014-06-17 US US14/306,702 patent/US9808944B2/en active Active
-
2015
- 2015-06-16 WO PCT/US2015/035910 patent/WO2015195591A1/en active Application Filing
- 2015-06-16 CA CA2952063A patent/CA2952063A1/en not_active Abandoned
- 2015-06-16 SG SG11201609565SA patent/SG11201609565SA/en unknown
- 2015-06-16 RU RU2016147228A patent/RU2016147228A/ru not_active Application Discontinuation
- 2015-06-16 MX MX2016016221A patent/MX2016016221A/es unknown
- 2015-06-16 EP EP15730675.4A patent/EP3158113B1/en active Active
- 2015-06-16 BR BR112016029455-6A patent/BR112016029455B1/pt active IP Right Grant
- 2015-06-16 JP JP2017518046A patent/JP6356910B2/ja active Active
- 2015-06-16 CN CN201580031850.0A patent/CN106457585B/zh active Active
- 2015-06-16 AU AU2015277430A patent/AU2015277430A1/en not_active Abandoned
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JPH119857A (ja) * | 1997-06-10 | 1999-01-19 | Warner Lambert Co | カミソリ刃及びその製造方法 |
JP2002542000A (ja) * | 1999-04-23 | 2002-12-10 | ザ ジレット カンパニー | 安全カミソリ |
US6615496B1 (en) * | 2000-05-04 | 2003-09-09 | Sandia Corporation | Micromachined cutting blade formed from {211}-oriented silicon |
WO2002098619A1 (fr) * | 2001-05-28 | 2002-12-12 | Matsushita Electric Works, Ltd. | Lame de rasoir |
JP2004141360A (ja) * | 2002-10-23 | 2004-05-20 | Mitsuchika Saito | 単結晶材料刃、単結晶材料刃を備えた刃物および単結晶材料刃の製造方法 |
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Also Published As
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BR112016029455A2 (pt) | 2017-08-22 |
SG11201609565SA (en) | 2016-12-29 |
BR112016029455A8 (pt) | 2021-05-18 |
US20150360376A1 (en) | 2015-12-17 |
MX2016016221A (es) | 2017-02-23 |
EP3158113B1 (en) | 2022-03-30 |
CA2952063A1 (en) | 2015-12-23 |
JP6356910B2 (ja) | 2018-07-11 |
BR112016029455B1 (pt) | 2022-07-12 |
CN106457585A (zh) | 2017-02-22 |
RU2016147228A (ru) | 2018-07-17 |
US9808944B2 (en) | 2017-11-07 |
CN106457585B (zh) | 2019-09-10 |
ZA201608342B (en) | 2018-12-19 |
RU2016147228A3 (ja) | 2018-07-17 |
EP3158113A1 (en) | 2017-04-26 |
WO2015195591A1 (en) | 2015-12-23 |
AU2015277430A1 (en) | 2016-12-08 |
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