JP2017521963A - 差動水晶発振回路 - Google Patents

差動水晶発振回路 Download PDF

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Publication number
JP2017521963A
JP2017521963A JP2017503510A JP2017503510A JP2017521963A JP 2017521963 A JP2017521963 A JP 2017521963A JP 2017503510 A JP2017503510 A JP 2017503510A JP 2017503510 A JP2017503510 A JP 2017503510A JP 2017521963 A JP2017521963 A JP 2017521963A
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JP
Japan
Prior art keywords
coupled
mosfet
circuit
transistors
transistor
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Pending
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JP2017503510A
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English (en)
Japanese (ja)
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JP2017521963A5 (enExample
Inventor
ラジャビ、ヤシャー
カボウシアン、アミルポウヤ
カーリリ、アリレザ
バヒド・ファー、モハンマド・バグハー
コミジャニ、アッバス
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Qualcomm Inc
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Qualcomm Inc
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Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of JP2017521963A publication Critical patent/JP2017521963A/ja
Publication of JP2017521963A5 publication Critical patent/JP2017521963A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02—Details
    • H03B5/06—Modifications of generator to ensure starting of oscillations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0094—Measures to ensure starting of oscillations

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  • Oscillators With Electromechanical Resonators (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
JP2017503510A 2014-07-22 2015-06-16 差動水晶発振回路 Pending JP2017521963A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/338,241 2014-07-22
US14/338,241 US9300249B2 (en) 2014-07-22 2014-07-22 Differential crystal oscillator circuit
PCT/US2015/036055 WO2016014176A1 (en) 2014-07-22 2015-06-16 Differential crystal oscillator circuit

Publications (2)

Publication Number Publication Date
JP2017521963A true JP2017521963A (ja) 2017-08-03
JP2017521963A5 JP2017521963A5 (enExample) 2018-06-28

Family

ID=53490300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017503510A Pending JP2017521963A (ja) 2014-07-22 2015-06-16 差動水晶発振回路

Country Status (5)

Country Link
US (1) US9300249B2 (enExample)
EP (1) EP3172835B1 (enExample)
JP (1) JP2017521963A (enExample)
CN (1) CN106664058A (enExample)
WO (1) WO2016014176A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017155122A (ja) * 2016-03-01 2017-09-07 日立化成株式会社 熱硬化性樹脂組成物、プリプレグ、積層板及びプリント配線板
JP2018095889A (ja) * 2018-02-14 2018-06-21 日立化成株式会社 樹脂ワニス、プリプレグ、積層板及びプリント配線板
JPWO2018105070A1 (ja) * 2016-12-07 2018-12-06 日立化成株式会社 樹脂ワニス、プリプレグ、積層板及びプリント配線板

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5979162B2 (ja) * 2014-01-16 2016-08-24 株式会社村田製作所 パワーオンリセット回路
US9531323B1 (en) 2015-06-24 2016-12-27 Qualcomm Incorporated Low-power balanced crystal oscillator
US9553545B1 (en) * 2015-12-29 2017-01-24 Qualcomm Incorporated Stable differential crystal oscillator with active super diodes
CN107947756A (zh) * 2017-11-28 2018-04-20 中科亿海微电子科技（苏州）有限公司 差分cmos处理电路及振荡系统
CN111342805B (zh) * 2018-12-18 2023-12-15 天津大学 带阻抗曲线调整模块的滤波器单元、滤波器及电子设备
US10985698B2 (en) 2019-08-20 2021-04-20 Analog Devices, Inc. Differential electro-mechanical oscillating circuits and related methods
US10763786B1 (en) 2019-10-28 2020-09-01 Nxp B.V. Differential crystal oscillator
US11177984B1 (en) 2020-06-01 2021-11-16 Xilinx, Inc. CMOS analog circuits having a triode-based active load
US10998307B1 (en) * 2020-06-01 2021-05-04 Xilinx, Inc. CMOS analog circuits having a triode-based active load
US11309836B1 (en) * 2021-08-02 2022-04-19 Realtek Semiconductor Corp. Differential crystal oscillator with large voltage swing
CN114900130B (zh) * 2022-05-27 2025-03-18 思诺威科技(无锡)有限公司 一种新型差分晶体振荡器电路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6696898B1 (en) * 1998-11-12 2004-02-24 Broadcom Corporation Differential crystal oscillator
US20090206936A1 (en) * 2008-02-19 2009-08-20 Spectralinear, Inc. Voltage-controlled oscillator topology
JP2012094886A (ja) * 2000-06-22 2012-05-17 Renesas Electronics Corp 半導体集積回路

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WO2000072446A1 (en) * 1999-05-26 2000-11-30 Broadcom Corporation Integrated vco
US6437652B1 (en) 2000-12-29 2002-08-20 Broadcom Corporation Apparatus and method for reducing phase noise in oscillator circuits
US6542042B1 (en) 2001-02-20 2003-04-01 Analog Devices, Inc. Low power crystal oscillator with feedback resistor pair
EP1265352B1 (fr) 2001-06-07 2011-08-10 CSEM Centre Suisse d'Electronique et de Microtechnique S.A. - Recherche et Développement Circuit oscillateur différentiel comprenant un résonateur électromécanique
US7336138B2 (en) 2006-04-28 2008-02-26 Renesas Technology Corp. Embedded structure circuit for VCO and regulator
US7391278B2 (en) 2006-07-31 2008-06-24 Freescale Semiconductor, Inc. Oscillator with stacked amplifier
JP2008252783A (ja) 2007-03-30 2008-10-16 Matsushita Electric Ind Co Ltd 圧電発振器
EP2289164B1 (en) 2008-05-30 2015-07-08 Optis Cellular Technology, LLC Dual-band voltage-controlled oscillator arrangement
US7768359B2 (en) 2008-08-01 2010-08-03 Broadcom Corporation Low phase noise differential crystal oscillator circuit
US8487670B2 (en) * 2009-09-03 2013-07-16 Qualcomm, Incorporated Divide-by-two injection-locked ring oscillator circuit
JP5900727B2 (ja) * 2011-09-28 2016-04-06 セイコーエプソン株式会社 発振回路、発振器、電子機器及び発振器の起動方法
US8665030B2 (en) * 2011-12-14 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage-controlled oscillator
US8643445B1 (en) 2012-08-08 2014-02-04 Texas Instruments Incorporated Crystal oscillator circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6696898B1 (en) * 1998-11-12 2004-02-24 Broadcom Corporation Differential crystal oscillator
JP2012094886A (ja) * 2000-06-22 2012-05-17 Renesas Electronics Corp 半導体集積回路
US20090206936A1 (en) * 2008-02-19 2009-08-20 Spectralinear, Inc. Voltage-controlled oscillator topology

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017155122A (ja) * 2016-03-01 2017-09-07 日立化成株式会社 熱硬化性樹脂組成物、プリプレグ、積層板及びプリント配線板
JPWO2018105070A1 (ja) * 2016-12-07 2018-12-06 日立化成株式会社 樹脂ワニス、プリプレグ、積層板及びプリント配線板
JP2018095889A (ja) * 2018-02-14 2018-06-21 日立化成株式会社 樹脂ワニス、プリプレグ、積層板及びプリント配線板

Also Published As

Publication number Publication date
WO2016014176A1 (en) 2016-01-28
US20160028349A1 (en) 2016-01-28
EP3172835A1 (en) 2017-05-31
EP3172835B1 (en) 2018-10-17
CN106664058A (zh) 2017-05-10
US9300249B2 (en) 2016-03-29

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