JP2017519247A - レーザスラブ用の改善された反射/吸収コーティング - Google Patents
レーザスラブ用の改善された反射/吸収コーティング Download PDFInfo
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
- H01S3/0625—Coatings on surfaces other than the end-faces
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
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Abstract
Description
一例において、上記薄層の金属は、約5nmから約20nmの範囲内の厚さを持つ。他の一例において、上記薄層の金属は、約10nmの厚さを持つ。一例において、上記薄層の金属は、上記少なくとも1層の低屈折率光学コーティング上に堆積されている。一例において、上記薄層の金属はクロムである。当該光導波路は更に、上記薄層の金属の表面と熱的に連通した熱的光学的インタフェースを有することができ、上記金属の薄層が、上記少なくとも1層の低屈折率光学コーティングと上記熱的光学的インタフェースとの間に配置される。一例において、上記熱的光学的インタフェースはグラファイトの層である。一例において、上記薄層の金属は、1030nmの波長で少なくとも3の吸光係数を持つ。一例において、上記少なくとも1層の低屈折率光学コーティングは、約3000nmの厚さを持つAl2O3である。一例において、上記導波路基体は、イットリウムアルミニウムガーネット(YAG)のスラブである。
多数の異なる導波路構造について、(オレゴン州ポートランドのソフトウェアスペクトラ社から入手可能な)TFCalc(登録商標)3.5.12を用いて薄膜モデリングを実行した。図3は、薄層の金属を含まない導波路についての入射角(x軸)に対する反射率(%)(y軸)を例示するグラフである。図3−7で使用した波長は1030nmである。このモデリングで使用した導波路は、導波路基体としてYAGを含み、低屈折率光学コーティングの層として3000nmのAl2O3を含み、そして、TOIとして10ミクロンのグラファイトの層を含んでいる。第1のシナリオにおいて、グラファイトとAl2O3との間に空隙を含め、空隙の厚さは500nmから10000nmまでの範囲とした。第2のシナリオにおいて、空隙を省略した。図3に示した結果は、第1のシナリオにおける特徴である空隙が33°と68°との間の入射角で反射を生じさせたことを指し示している。さらに、空隙はまた、10°の入射角でのピークを含め、その他の入射角でも反射の増大を生じさせた。空隙のない第2のシナリオは、有意に少ない反射を指し示した。
Claims (20)
- 導波路基体と、
前記導波路基体の表面上に形成された少なくとも1層の低屈折率光学コーティングと、
前記少なくとも1層の低屈折率光学コーティングの表面上に形成された薄層の金属であり、前記少なくとも1層の低屈折率光学コーティングが前記導波路基体と当該薄層の金属との間に配置されている、薄層の金属と、
を有する光導波路。 - 前記薄層の金属は、約5nmから約20nmの範囲内の厚さを持つ、請求項1に記載の光導波路。
- 前記薄層の金属は、約10nmの厚さを持つ、請求項2に記載の光導波路。
- 前記薄層の金属は、前記少なくとも1層の低屈折率光学コーティング上に堆積されている、請求項1に記載の光導波路。
- 前記薄層の金属はクロムである、請求項1に記載の光導波路。
- 当該光導波路は更に、前記薄層の金属の表面と熱的に連通した熱的光学的インタフェースを有し、前記金属の薄層が、前記少なくとも1層の低屈折率光学コーティングと前記熱的光学的インタフェースとの間に配置されている、請求項1に記載の光導波路。
- 前記熱的光学的インタフェースはグラファイトの層である、請求項6に記載の光導波路。
- 前記薄層の金属は、1030nmの波長で少なくとも3の吸光係数を持つ、請求項1に記載の光導波路。
- 前記少なくとも1層の低屈折率光学コーティングは、約3000nmの厚さを持つAl2O3である、請求項1に記載の光導波路。
- 前記導波路基体は、イットリウムアルミニウムガーネット(YAG)のスラブである、請求項1に記載の光導波路。
- 光導波路であり、
導波路基体と、
前記導波路基体の表面上に形成された低屈折率光学コーティングの層と、
前記低屈折率光学コーティングの層の表面上に形成された薄い金属の層であり、前記低屈折率光学コーティングの層が前記導波路基体と当該薄い金属の層との間に配置されている、薄い金属の層と、
を含む光導波路、及び
前記光導波路の側面に配置され、前記光導波路の長さ方向に前記光導波路内にポンプ光を放つように構成された少なくとも1つの光源、
を有する光導波路装置。 - 前記少なくとも1つの光源は、約1000nmから約1100nmの範囲内の波長のポンプ光を放つ、請求項11に記載の光導波路装置。
- 前記ポンプ光は約1030nmの波長にある、請求項12に記載の光導波路装置。
- 前記少なくとも1つの光源は、前記光導波路に対して70°未満の入射角で前記ポンプ光を放つように構成されている、請求項13に記載の光導波路装置。
- 前記薄い金属の層は、40%未満の反射率を持つ、請求項14に記載の光導波路装置。
- 前記薄い金属の層は、少なくとも3の吸光係数を持つ、請求項15に記載の光導波路装置。
- 前記薄い金属の層は、約5nmから約20nmの範囲内の厚さを持つ、請求項11に記載の光導波路装置。
- 前記薄い金属の層は、約10nmの厚さを持つ、請求項17に記載の光導波路装置。
- 前記薄い金属の層はクロムである、請求項11に記載の光導波路装置。
- 当該光導波路装置は更に、前記薄い金属の層の表面と熱的に連通した熱的光学的インタフェースを有し、前記薄い金属の層が、前記低屈折率光学コーティングの層と前記熱的光学的インタフェースとの間に配置されている、請求項11に記載の光導波路装置。
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US14/318,793 US9465165B2 (en) | 2014-06-30 | 2014-06-30 | Reflection/absorption coating for laser slabs |
PCT/US2015/030328 WO2016003542A1 (en) | 2014-06-30 | 2015-05-12 | Improved reflection/absorption coating for laser slabs |
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US10297968B2 (en) | 2015-11-25 | 2019-05-21 | Raytheon Company | High-gain single planar waveguide (PWG) amplifier laser system |
US11114813B2 (en) | 2015-11-25 | 2021-09-07 | Raytheon Company | Integrated pumplight homogenizer and signal injector for high-power laser system |
US10056731B2 (en) | 2015-11-25 | 2018-08-21 | Raytheon Company | Planar waveguide (PWG) amplifier-based laser system with adaptive optic wavefront correction in low-power beam path |
US10211590B2 (en) | 2015-11-25 | 2019-02-19 | Raytheon Company | Dual-function optical bench and cooling manifold for high-power laser system |
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US10411435B2 (en) | 2016-06-06 | 2019-09-10 | Raytheon Company | Dual-axis adaptive optic (AO) system for high-power lasers |
US9972960B1 (en) * | 2016-12-16 | 2018-05-15 | Raytheon Company | Reflection/absorption coating for metallurgical bonding to a laser gain medium |
US10511135B2 (en) | 2017-12-19 | 2019-12-17 | Raytheon Company | Laser system with mechanically-robust monolithic fused planar waveguide (PWG) structure |
US11133639B2 (en) | 2018-07-24 | 2021-09-28 | Raytheon Company | Fast axis thermal lens compensation for a planar amplifier structure |
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