JP2017515158A - 低損失モード変換器に関する逆テーパー型導波路 - Google Patents
低損失モード変換器に関する逆テーパー型導波路 Download PDFInfo
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- JP2017515158A JP2017515158A JP2016565450A JP2016565450A JP2017515158A JP 2017515158 A JP2017515158 A JP 2017515158A JP 2016565450 A JP2016565450 A JP 2016565450A JP 2016565450 A JP2016565450 A JP 2016565450A JP 2017515158 A JP2017515158 A JP 2017515158A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 232
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 232
- 239000010703 silicon Substances 0.000 claims abstract description 232
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 169
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 83
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 25
- 230000001590 oxidative effect Effects 0.000 claims abstract description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 42
- 230000003647 oxidation Effects 0.000 claims description 41
- 238000007254 oxidation reaction Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 39
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 82
- 230000003287 optical effect Effects 0.000 description 46
- 238000005520 cutting process Methods 0.000 description 25
- 238000009826 distribution Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 11
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000005253 cladding Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/38—Mechanical coupling means having fibre to fibre mating means
- G02B6/3807—Dismountable connectors, i.e. comprising plugs
- G02B6/381—Dismountable connectors, i.e. comprising plugs of the ferrule type, e.g. fibre ends embedded in ferrules, connecting a pair of fibres
- G02B6/3818—Dismountable connectors, i.e. comprising plugs of the ferrule type, e.g. fibre ends embedded in ferrules, connecting a pair of fibres of a low-reflection-loss type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
- G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
102 基板
104 シリコン導波路
106 二酸化シリコン
108 窒化シリコン
150 第1の切断線AA’
152 第2の切断線BB’
154、160 断面グラフ
170 光
180 第1の方向
182 第2の方向
200 モード変換器
202 基板
204 シリコン導波路
206 二酸化シリコン
208 窒化シリコン
254、260 断面グラフ
270 光
280 第1の方向
282 第2の方向
300 モード変換器
302 シリコン導波路
304 低屈折率導波路
312 アディアバティックテーパー部
370 光
380 第1の方向
382 第2の方向
400 モード変換器
402 シリコン導波路
404 低屈折率導波路
410 アディアバティックテーパー部
418 ギャップ
470 光
480 第1の方向
482 第2の方向
500 モード変換器
502 シリコン導波路
504 基板
506 第2の導波路
516 ギャップ
570 光
580 第1の方向
582 第2の方向
600 モード変換器製造プロセス
602 第1のハードマスク
604 SOI基板
606 二酸化シリコン
608 第2のハードマスク
610 シリコン導波路
700 モード変換器製造プロセス
702 シリコン基板
704 BOX層
706 シリコン層
708 二酸化シリコン層
710 窒化シリコン層
712 第2の導波路
714 第2のハードマスク
Claims (20)
- 基板であって、前記基板の上部に配置された二酸化シリコン(SiO2)材料を含む基板と、
第1のアディアバティックテーパー部を含み、前記二酸化シリコン材料に閉じ込められたシリコン導波路と、
前記基板の上部に配置され、前記第1のアディアバティックテーパー部に隣接する低屈折率導波路と、を含む、装置。 - 前記二酸化シリコン材料が前記基板と一体化された、請求項1に記載の装置。
- 前記二酸化シリコン材料が前記低屈折率導波路と直接接触する、請求項1に記載の装置。
- 前記二酸化シリコン材料が低屈折率材料によって前記低屈折率導波路から離隔された、請求項1に記載の装置。
- 前記低屈折率導波路が第2のアディアバティックテーパー部を含み、前記第1のアディアバティックテーパー部が前記第2のアディアバティックテーパー部と隣接する、請求項1に記載の装置。
- 前記シリコン導波路が、前記二酸化シリコン材料とともに酸化された、請求項1に記載の装置。
- 前記低屈折率導波路が、二酸化シリコン、窒化シリコン(Si3N4)、シリコンリッチ酸化物(SiOx)、酸化アルミニウム(Al2O3)及び炭化シリコン(SiC)のうち少なくとも1つを含む、請求項1に記載の装置。
- 前記基板がシリコンオンインシュレーター(SOI)である、請求項1に記載の装置。
- 基板と、
前記基板上に配置され、側壁及び第1のアディアバティックテーパー部を含むシリコン導波路と、
前記シリコン導波路上に配置され、二酸化シリコン(SiO2)層を含み、前記側壁を覆わないハードマスクと、
を含むモード変換器を得る段階と、
前記シリコン導波路及び前記ハードマスクを酸化する段階であって、前記二酸化シリコン層内に前記シリコン導波路を閉じ込める、前記シリコン導波路及び前記ハードマスクを酸化する段階と、
を含む、モード変換器製造方法。 - 前記基板が第2の二酸化シリコン層を含む、請求項9に記載の方法。
- 前記ハードマスクがさらに、前記二酸化シリコン層の上部に配置された窒化シリコン(Si3N4)層を含む、請求項9に記載の方法。
- 前記シリコン導波路及び前記二酸化シリコン層を酸化する段階が、乾式熱酸化を使用する段階を含む、請求項9に記載の方法。
- 前記シリコン導波路の先端部の幅を、前記酸化する段階によって減少させることをさらに含む、請求項9に記載の方法。
- 前記基板上に、前記シリコン導波路に隣接する第2の導波路をパターニングする段階をさらに含む、請求項9に記載の方法。
- 前記第2の導波路が第2のアディアバティックテーパー部を含む、請求項14に記載の方法。
- 前記第2の導波路が前記二酸化シリコン層に直接接触する、請求項14に記載の方法。
- 第1のアディアバティックテーパー部及び側壁を含むシリコン導波路を基板上に形成する段階であって、ハードマスクが前記シリコン導波路上に配置され、前記側壁を覆わず、前記ハードマスクが二酸化シリコン(SiO2)材料を含む、シリコン導波路を形成する段階と、
前記基板上に第2の導波路を形成する段階であって、前記第2の導波路が前記第2の導波路を閉じ込める第2のハードマスクを含む、第2の導波路を形成する段階と、
前記シリコン導波路及び前記第2の導波路を、前記シリコン導波路が二酸化シリコン材料内に閉じ込められるまで酸化する段階と、を含む、モード変換器製造方法。 - 前記シリコン導波路の先端部の幅を、前記酸化する段階を通して減少させることをさらに含む、請求項17に記載の方法。
- 前記第2の導波路が第2のアディアバティックテーパー部を含む、請求項17に記載の方法。
- 前記シリコン導波路が低屈折率材料によって前記第2の導波路から離隔され、前記基板がシリコン(Si)層及び埋め込み酸化物(BOX)層を含む、請求項17に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201461986517P | 2014-04-30 | 2014-04-30 | |
US61/986,517 | 2014-04-30 | ||
PCT/US2015/028538 WO2015168419A1 (en) | 2014-04-30 | 2015-04-30 | Inverse taper waveguides for low-loss mode converters |
Publications (2)
Publication Number | Publication Date |
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JP2017515158A true JP2017515158A (ja) | 2017-06-08 |
JP6508543B2 JP6508543B2 (ja) | 2019-05-08 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016565450A Active JP6508543B2 (ja) | 2014-04-30 | 2015-04-30 | 低損失モード変換器に関する逆テーパー型導波路 |
Country Status (6)
Country | Link |
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US (2) | US9709741B2 (ja) |
EP (1) | EP3149523A1 (ja) |
JP (1) | JP6508543B2 (ja) |
KR (1) | KR20160147018A (ja) |
CN (1) | CN106461873B (ja) |
WO (1) | WO2015168419A1 (ja) |
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CN106461873B (zh) | 2021-04-20 |
US20170269302A1 (en) | 2017-09-21 |
JP6508543B2 (ja) | 2019-05-08 |
CN106461873A (zh) | 2017-02-22 |
KR20160147018A (ko) | 2016-12-21 |
US9709741B2 (en) | 2017-07-18 |
US20150316720A1 (en) | 2015-11-05 |
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US10120135B2 (en) | 2018-11-06 |
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