JP2017510064A - シリコン基板上のiii−n半導体層 - Google Patents
シリコン基板上のiii−n半導体層 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 102
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 37
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 33
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 31
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 154
- 239000013078 crystal Substances 0.000 claims description 39
- 239000000872 buffer Substances 0.000 claims description 20
- 230000006911 nucleation Effects 0.000 claims description 14
- 238000010899 nucleation Methods 0.000 claims description 14
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 12
- 230000004048 modification Effects 0.000 claims description 9
- 238000012986 modification Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 5
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 claims description 4
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 6
- 238000010586 diagram Methods 0.000 description 8
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- -1 rare earth nitrides Chemical class 0.000 description 2
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
Description
Claims (21)
- III-N半導体材料をシリコン基板上に成長させる方法であって、
単結晶のシリコン基板を用意し、
前記シリコン基板上にエピタキシャル希土類酸化物層を成長させ、
前記希土類酸化物層の表面を、窒素原子で終端させて窒素原子のテンプレートを形成し、
窒素で終端させた前記エピタキシャル希土類酸化物の表面上にIII-N材料の層を成長させ、
前記III-N材料の層上にバルク状にエピタキシャルIII-N半導電性材料の層を成長させる、方法。 - 前記III-N材料の層を成長させるステップは、GaNまたはAlNをエピタキシャルに成長させることを含む、請求項1に記載の方法。
- 前記エピタキシャル希土類酸化物の層の表面を窒素で終端させるステップは窒素プラズマを用いて該表面を改質することを含む、請求項1に記載の方法。
- 前記窒素プラズマを使用して前記エピタキシャル希土類酸化物層の表面を改質するステップにおいて、前記窒素プラズマが2〜4の範囲の原子/分子比率を有し、前記基板温度が窒素プラズマによる改質の間、550℃〜850℃の範囲である、請求項3に記載の方法。
- 前記窒素ガリウムを使用して低温エピタキシャルの層を成長させるステップにおいて、基温範囲の温度が450℃〜650℃であり、窒素プラズマの原子/分子比率が2〜4の範囲であり、ガリウム蒸気の分圧が約1 x 10-6 Torrである、請求項2に記載の方法。
- 前記バルク・エピタキシャルIII-Nの半導体層を成長させるステップは、
800℃〜950℃の範囲の基板温度、
約2.5x10-6 Torrのガリウム蒸気分圧、および
プラズマ中の2〜4の範囲の原子/分子窒素比率の各パラメータのもとで行われる、請求項1に記載の方法。 - 前記シリコン基板上に希土類酸化物のエピタキシャル層を成長させるステップは、単層または多層のREOバッファ層を成長させることを含む、請求項1に記載の方法。
- 前記シリコン基板上に希土類酸化物のエピタキシャル層を成長させるステップは、シリコン基板に格子が実質的に一致した第1の希土類酸化被膜をエピタキシャルに堆積させ、第2の希土類酸化被膜に応力が加えられるように、第1の希土類酸化被膜と異なる格子定数を有する第2の希土類酸化被膜をエピタキシャルに堆積させる、請求項1に記載の方法。
- 前記第2の希土類酸化被膜をエピタキシャルに堆積させるステップは、結晶構造の応力を維持するために10ナノメートル以下の膜厚で前記第2の希土類酸化被膜を堆積させることを含む、請求項8に記載の方法。
- シリコン基板上にIII-N半導体を成長させる方法であって、
単結晶のシリコン基板を用意し、
前記シリコン基板上に、シリコン基板に実質的に格子整合する希土類酸化物の第一層をエピタキシャルに堆積させ、
前記希土類酸化物の第一層上に前記希土類酸化物の第一層と異なる格子定数を有する希土類酸化物の第二層をエピタキシャルに堆積させて、希土類酸化物の第二層中に応力を発生させ、
核生成層を形成するために前記エピタキシャル希土類酸化物の第二層を窒素で窒化し、
エピタキシャル希土類酸化物の核生成層上にIII-N材料の層をエピタキシャルに成長させる、方法。 - 前記希土類酸化物の第二層をエピタキシャルに成長させるステップは、10ナノメートル以下の膜厚に前記希土類酸化物の第二層を成長させることを含む、請求項10に記載の方法。
- 前記希土類酸化物の第一層をエピタキシャルに成長させるステップは、50ナノメートルを超える膜厚に前記希土類酸化物の第一層を成長させることを含む、請求項10に記載の方法。
- 前記希土類酸化物の第一層をエピタキシャルに成長させるステップは、前記シリコン基板上に単層または多層のREOバッファ層を堆積させることを含む、請求項10に記載の方法。
- シリコン基板上にIII-N半導体を成長させる方法であって、
単結晶のシリコン基板を提供し、
前記シリコン基板上にシリコン基板と実質的に格子整合する希土類酸化物の第一層をエピタキシャルに堆積させ、
希土類酸化物の第二層中に応力を生成するため、前記希土類酸化物の第一層上に前記希土類酸化物の第一層と異なる格子定数を有している希土類酸化物の第二層をエピタキシャルに堆積させ、
核生成層を形成するために前記エピタキシャル希土類酸化物の第二層を窒素で窒化し、
前記エピタキシャル希土類酸化物の核生成層上にRENまたはRE-IIII-N材料の核形成バッファ層をエピタキシャルに堆積させ、
前記エピタキシャル希土類酸化物の核形成バッファ層上にIII-N材料の層をエピタキシャルに成長させる、方法。 - 単結晶シリコン基板を提供し、
前記シリコン基板上に希土類酸化物の層をエピタキシャルに堆積させ、
窒素プラズマを用いて前記エピタキシャル希土類酸化物の表面を改質し、ここにおいて前記窒素プラズマは、2〜4の範囲の原子/分子比率と、窒素プラズマによる改質の間保たれる550℃〜850℃の基板温度とを有し、
450℃〜650℃の範囲の基板温度、2〜4の範囲のプラズマの原子/分子窒素比率、およびおよそ1x10-6 Torrのガリウム蒸気分圧で前記エピタキシャル希土類酸化物の改質層の表面上に低温エピタキシャル窒化ガリウム層を成長させ、
800℃〜950℃の範囲の基板温度、およそ2.5x10-6 Torrのガリウム蒸気分圧、および2〜4の範囲のプラズマの原子/分子窒素比率で前記低温エピタキシャル窒化ガリウムの層上にバルク・エピタキシャルIII-N半導電性材料の層を成長させる、方法。 - シリコン基板上のIII-N半導体であって、
単結晶のシリコン基板と、
前記シリコン基板に形成され前記シリコン基板と実質的に格子整合する希土類酸化物の第1のエピタキシャル層と、
希土類酸化物の第2のエピタキシャル層中に応力が形成されるように前記希土類酸化物の第1のエピタキシャル層に形成された、前記希土類酸化物の第1のエピタキシャル層と異なる格子定数を有する前記希土類酸化物の第2のエピタキシャル層と、
核生成層を形成するように窒素によって窒化されたエピタキシャル希土類酸化物の第二層と、
前記エピタキシャル希土類酸化物の核生成層上に形成されたIII-N材料のエピタキシャル層と、を有するIII-N半導体。 - 前記希土類酸化物の第1のエピタキシャル層は、単結晶酸化ガドリニウム(Gd2O3)を含み、前記希土類酸化物の第2のエピタキシャル層は単結晶酸化エルビウム(Er2O3)を含む、請求項16に記載のIII-N半導体。
- シリコン基板上のIII-N半導体であって、
単結晶のシリコン基板と、
前記シリコン基板上に配置されて、窒素原子が終端することによって窒素原子のテンプレートを形成している表面を有する希土類酸化物の単結晶層と、
前記窒素原子テンプレート上に配置されたIII-N材料の単結晶層と、
前記III-N材料の単結晶層に配置された単結晶バルク・エピタキシャル半導体III-N層とを有する、III-N半導体。 - 前記単結晶エピタキシャル希土類酸化層は、立方結晶構造を有する希土類酸化物を含む、請求項18に記載のIII-N半導体。
- 前記立方結晶構造を有する単結晶エピタキシャル希土類酸化物は、単結晶酸化エルビウム(Er2O3)を含む、請求項18に記載のIII-N半導体。
- 前記エピタキシャルIII-Nの層を成長させるステップは、窒化ガリウムをバルク状に低温エピタキシャル成長させることを含む、請求項1に記載の方法。
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US14/179,040 US9460917B2 (en) | 2014-02-12 | 2014-02-12 | Method of growing III-N semiconductor layer on Si substrate |
US14/179,040 | 2014-02-12 | ||
PCT/US2015/014034 WO2015123043A1 (en) | 2014-02-12 | 2015-02-02 | Iii-n semiconductor layer on si substrate |
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CN109478591B (zh) * | 2016-06-19 | 2023-07-25 | Iqe公司 | 用于RF滤波器应用的外延AlN/稀土氧化物结构 |
GB2565056A (en) * | 2017-07-28 | 2019-02-06 | Comptek Solutions Oy | Semiconductor device and method of manufacture |
US11038023B2 (en) | 2018-07-19 | 2021-06-15 | Macom Technology Solutions Holdings, Inc. | III-nitride material semiconductor structures on conductive silicon substrates |
US11063114B2 (en) * | 2018-11-20 | 2021-07-13 | Iqe Plc | III-N to rare earth transition in a semiconductor structure |
US20230117013A1 (en) * | 2021-10-14 | 2023-04-20 | Applied Materials, Inc. | SUBSTRATE PROCESSING FOR GaN GROWTH |
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US20170054025A1 (en) | 2017-02-23 |
US20150228484A1 (en) | 2015-08-13 |
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EP3105795A1 (en) | 2016-12-21 |
US9460917B2 (en) | 2016-10-04 |
CN106133914A (zh) | 2016-11-16 |
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EP3105795A4 (en) | 2017-09-27 |
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