JP2017509107A5 - - Google Patents

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Publication number
JP2017509107A5
JP2017509107A5 JP2016546756A JP2016546756A JP2017509107A5 JP 2017509107 A5 JP2017509107 A5 JP 2017509107A5 JP 2016546756 A JP2016546756 A JP 2016546756A JP 2016546756 A JP2016546756 A JP 2016546756A JP 2017509107 A5 JP2017509107 A5 JP 2017509107A5
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JP
Japan
Prior art keywords
plasma
region
tube
plasma generator
boron nitride
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JP2016546756A
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English (en)
Japanese (ja)
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JP6546927B2 (ja
JP2017509107A (ja
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Priority claimed from PCT/AU2015/050013 external-priority patent/WO2015106318A1/en
Publication of JP2017509107A publication Critical patent/JP2017509107A/ja
Publication of JP2017509107A5 publication Critical patent/JP2017509107A5/ja
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Publication of JP6546927B2 publication Critical patent/JP6546927B2/ja
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JP2016546756A 2014-01-15 2015-01-15 膜内の不純物を低減するための装置および方法 Active JP6546927B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AU2014900121 2014-01-15
AU2014900121A AU2014900121A0 (en) 2014-01-15 Apparatus and method for the reduction of impurities in rpcvd films
PCT/AU2015/050013 WO2015106318A1 (en) 2014-01-15 2015-01-15 Apparatus and method for the reduction of impurities in films

Publications (3)

Publication Number Publication Date
JP2017509107A JP2017509107A (ja) 2017-03-30
JP2017509107A5 true JP2017509107A5 (OSRAM) 2018-02-22
JP6546927B2 JP6546927B2 (ja) 2019-07-17

Family

ID=53542217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016546756A Active JP6546927B2 (ja) 2014-01-15 2015-01-15 膜内の不純物を低減するための装置および方法

Country Status (9)

Country Link
US (1) US11001926B2 (OSRAM)
EP (1) EP3095305B1 (OSRAM)
JP (1) JP6546927B2 (OSRAM)
KR (1) KR102279673B1 (OSRAM)
CN (1) CN105917748B (OSRAM)
AU (1) AU2015207672B2 (OSRAM)
SG (1) SG11201605463QA (OSRAM)
TW (1) TWI651429B (OSRAM)
WO (1) WO2015106318A1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3707756B1 (en) 2017-11-07 2022-08-24 Gallium Enterprises Pty Ltd Buried activated p-(al,in)gan layers
WO2021042170A1 (en) * 2019-09-04 2021-03-11 Gallium Enterprises Pty Ltd "rpcvd apparatus and methods for forming a film "
US11521834B2 (en) * 2020-08-26 2022-12-06 Tokyo Electron Limited Plasma processing systems and methods for chemical processing a substrate
JP7766910B2 (ja) * 2021-09-27 2025-11-11 国立大学法人東海国立大学機構 Ｉｉｉ族窒化物半導体装置の製造装置および製造方法

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