JP2017505996A - 第1の基板を剥離させるための装置と方法 - Google Patents
第1の基板を剥離させるための装置と方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 289
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 description 22
- 230000002093 peripheral effect Effects 0.000 description 22
- 239000010410 layer Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 15
- 230000001070 adhesive effect Effects 0.000 description 15
- 239000004033 plastic Substances 0.000 description 11
- 229920003023 plastic Polymers 0.000 description 11
- 239000002994 raw material Substances 0.000 description 10
- 230000035515 penetration Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000007779 soft material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004422 calculation algorithm Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000013013 elastic material Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229920001453 Arcel Polymers 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- -1 Perfluoro Chemical group 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- OGSYQYXYGXIQFH-UHFFFAOYSA-N chromium molybdenum nickel Chemical compound [Cr].[Ni].[Mo] OGSYQYXYGXIQFH-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000006261 foam material Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920002681 hypalon Polymers 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000582 polyisocyanurate Polymers 0.000 description 1
- 239000011495 polyisocyanurate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
- Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/934—Apparatus having delaminating means adapted for delaminating a specified article
- Y10S156/941—Means for delaminating semiconductive product
-
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1126—Using direct fluid current against work during delaminating
- Y10T156/1132—Using vacuum directly against work during delaminating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
- Y10T156/1944—Vacuum delaminating means [e.g., vacuum chamber, etc.]
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1978—Delaminating bending means
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Abstract
Description
・全面粘着
○永続的な接合方式
●直接接合
・Si−Siボンディング
・SiO2−SiO2ボンディング
・SiO2−Siボンディング
●金属接合
●共晶接合
●陽極接合
○一時的な接合方式
●事前接合方式
●接合粘着方式
・1つの接合層を用いる
・2つの接合層を用いる
・3つの接合層を用いる
・4つ以上の接合層を用いる
・縁部粘着
○一時的な接合方式
●接合粘着方式
・点状粘着
○一時的な接合方式
●レーザトラック方式
全面粘着の上部グループは、基板の接着面全体にわたって2つの基板が接続されるあらゆる接合方式を含む。従って、位置に依存せずに、2つの基板間の接合強度は非常に高く、更に有利には等しい。全面粘着は、永続的な接合方式と一時的な接合方式に分類される。永続的な接合方式では、破損が生じることなく分離を行うことができる。従って、永続的な接合方式は、ここでは単に完全性を期すために言及している。
・ポリマー、特に、
○プラスチック、特に、
●エラストマー、特に、
・ヴァイトン(原材料)、及び/又は、
・ポリウレタン、及び/又は、
・ハイパロン(原材料)、及び/又は、
・イソプレンゴム(原材料)、及び/又は、
・ニトリルゴム(原材料)、及び/又は、
・パーフルオロゴム(原材料)、及び/又は、
・ポリイソブテン(原材料)、
●熱可塑性エラストマー、及び/又は、
●フォーム、特に、
・アーセル(原材料)、及び/又は、
・ネオポール(原材料)、及び/又は、
・ポリイソシアヌレート、及び/又は、
・ポリスチロール、及び/又は、
・セルララバー、
○シラン、特に、
●シリコン、
・結合材料、特に、
○炭素繊維製の結合材料、
・金属、特に、
○非常に軟質の金属、例えばPb(鉛)又はSn(スズ)、及び/又は、
○Al,Pt,Au,Ag,Zn,Ni,Fe,Co,Mo,Nb、
・合金、特に、
○真鍮、青銅、及び/又は、
○鋼、特にステンレス鋼、例えばクロムニッケル鋼又はクロムニッケルモリブデン鋼、及び/又は、
○ニッケルベースの合金、及び/又は、
○アルミニウムベースの合金。
特別な実施の形態においては、一定の凹状の湾曲部を有するように、輪郭収容部材が構成されている。凹状の湾曲部は、対応する基板の外側輪郭のための収容部として使用される。輪郭収容部材に使用される各材料は、相応に軟質且つ弾性である。後者は、凹状の湾曲部が相応の機能特性を満たし、且つ、本発明による実施の形態のうちの1つを用いてデボンディングプロセスを実施できる場合には該当しない。本発明の更なる利点、特徴及び詳細は、有利な実施例についての説明並びに図面より明らかになる。
−丸みが付けられたピン(図6hに示した固定部材17)、
−固定面8oの大部分を覆うために相応に大きい半径を有している円柱(図6iに示した固定部材17’)、又は、
−風船のように膨らませることができ、従って、特に固定面8oとの接触面における制御可能な圧力体である、変形可能な膜(図6jに示した固定部材17’’)。
2,2’,2’’ 支持体
2s,2s’ 当接肩部
3,3’ 輪郭収容部材
3s 端面
4 フレーム
5 テープ
5u 下面
6 第2の基板
7 接続層
8 第1の基板
8k 基板周囲輪郭
8o 固定面
9,9’ クランプ部材保持部
10 駆動手段
11,11’ 基板保持部
12 積層基板
13 接合波
14 真空ストリップ
15 シール
17,17’,17’’,17’’’ 固定部材
L 剥離方向
R 半径方向
F クランプ力
G1,G2 反力
B クランプ領域
e 進入深さ
α角度間隔
Q 移動方向
D 第1の基板の直径
d 第1の基板の厚さ
Claims (14)
- 剥離方向(L)において第1の基板(8)を第2の基板(6)から剥離させる装置において、
−前記剥離方向(L)を横断する方向及び半径方向(R)において前記第1の基板(8)へと案内される、前記剥離方向(L)を横断する方向において前記第1の基板(8)をクランプするための、少なくとも2つのクランプ部材(1,1’,1’’,1’’’)と、
−前記第2の基板(6)を保持するための、基板保持部(11,11’)と、
−前記クランプ部材(1,1’,1’’,1’’’)によって固定されている前記第1の基板(8)の、前記剥離方向(L)における移動によって、及び/又は、前記基板保持部(11,11’)の、前記剥離方向(L)とは反対方向における移動によって、前記第1の基板(8)を前記第2の基板(6)から剥離させるための剥離手段と、
を備えていることを特徴とする、装置。 - 前記クランプ部材(1,1’,1’’,1’’’)は、特に別個に前記半径方向(R)において、及び/又は、特に別個に前記剥離方向(L)において駆動されるか、又は駆動可能に案内される、請求項1に記載の装置。
- それぞれ2つのクランプ部材(1,1’,1’’,1’’’)が半径方向において対向して配置されている、請求項1又は2に記載の装置。
- 前記クランプ部材(1,1’,1’’,1’’’)は、半径方向(R)において前記第1の基板(8)に向けられている弾性の端面(3s)を有しており、前記端面(3s)は、前記第1の基板(8)を弾性且つ柔軟にクランプするために用いられる、請求項1乃至3のいずれか1項に記載の装置。
- 前記基板保持部(11,11’)は、特に前記第2の基板(6)の全面を収容する、硬質の基板保持部(11,11’)として形成されている、請求項1乃至4のいずれか1項に記載の装置。
- 前記装置は、特に剥離方向(L)において駆動される及び/又は駆動可能に案内される、前記クランプ部材(1,1’,1’’,1’’’)を保持及び案内するためのクランプ部材保持部(9,9’)を有している、請求項1乃至5のいずれか1項に記載の装置。
- 前記装置は、前記第1の基板(8)を剥離させる際に、前記第2の基板(6)に前記第1の基板(8)を部分的に固定するための固定部材(17,17’,17’’,17’’’)を有している、請求項1乃至6のいずれか1項に記載の装置。
- 前記部分的な固定は、前記第2の基板(6)側とは反対側の、前記第1の基板(8)の固定面(8o)の内側領域において行われる、請求項7に記載の装置。
- 前記固定部材(17’’’)は、前記固定部材(17’’’)に前記第1の基板(8)を固定するための固定手段(15,16)を有している、請求項7又は8に記載の装置。
- 剥離方向(L)において第1の基板(8)を第2の基板(6)から剥離させる方法において、
特に記載の順序で実施される以下のステップを備えている、即ち、
−基板保持部(11,11’)を用いて、前記第2の基板(6)を保持するステップと、
−前記剥離方向(L)を横断する方向及び半径方向(R)において前記第1の基板(8)へと案内される少なくとも2つのクランプ部材(1,1’,1’’,1’’’)によって、前記剥離方向(L)を横断する方向において前記第1の基板(8)をクランプするステップと、
−剥離方向(L)における前記クランプ部材(1,1’,1’’,1’’’)の移動によって、及び/又は、前記剥離方向(L)とは反対方向における前記基板保持部(11,11’)の移動によって、前記第1の基板(8)を前記第2の基板(6)から剥離させるステップと、
を備えていることを特徴とする、方法。 - 前記クランプ部材(1,1’,1’’,1’’’)を、特に別個に前記半径方向(R)において、及び/又は、特に別個に前記剥離方向(L)において駆動させる、請求項10に記載の方法。
- 前記第1の基板(8)を、前記剥離の間に、固定部材(17,17’,17’’,17’’’)によって、前記剥離方向(L)とは反対方向に向けられる反力(G2)で前記第2の基板(6)に部分的に固定する、請求項10又は11に記載の方法。
- 前記部分的な固定を、前記第2の基板(6)側とは反対側の、前記第1の基板(8)の固定面(8o)の内側領域において行う、請求項12に記載の方法。
- 前記第1の基板(8)を、前記剥離の間に前記固定部材(17’’’)に固定し、特に前記固定部材(17’’’)の固定手段(15,16)によって固定する、請求項12又は13に記載の方法。
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