JP2017224689A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017224689A JP2017224689A JP2016118257A JP2016118257A JP2017224689A JP 2017224689 A JP2017224689 A JP 2017224689A JP 2016118257 A JP2016118257 A JP 2016118257A JP 2016118257 A JP2016118257 A JP 2016118257A JP 2017224689 A JP2017224689 A JP 2017224689A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 230000017525 heat dissipation Effects 0.000 claims abstract description 86
- 239000000463 material Substances 0.000 claims abstract description 86
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 44
- 239000011147 inorganic material Substances 0.000 claims abstract description 44
- 239000011521 glass Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 10
- 239000011347 resin Substances 0.000 abstract description 19
- 229920005989 resin Polymers 0.000 abstract description 19
- 239000000919 ceramic Substances 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 abstract description 9
- 229910000679 solder Inorganic materials 0.000 abstract description 8
- 230000008646 thermal stress Effects 0.000 abstract description 8
- 239000000945 filler Substances 0.000 abstract description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 6
- 230000002040 relaxant effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
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- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
第1実施形態について説明する。まず、図1を参照して、本実施形態にかかる半導体装置の構成について説明する。
第1実施形態では、図2に示したように無機材料で構成された接合材23を貼り付けた第1ヒートシンク21を用意し、接合材23に対して第2ヒートシンク22を接合することで第1放熱構造体20を製造した。第2放熱構造体30についても同様の方法によって製造した。
第2実施形態について説明する。本実施形態は、第1実施形態に対して第1放熱構造体20および第2放熱構造体30の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
第3実施形態について説明する。本実施形態も、第1実施形態に対して第1放熱構造体20および第2放熱構造体30の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
20、30 第1、第2放熱構造体
21、22、31、32 第1、第2ヒートシンク
23 接合材
23a、23b、23d、33a、33b、33d 無機材料層
23c、23e、33c、33e 接合膜
40 放熱ブロック
60 モールド樹脂
100 半導体装置
Claims (5)
- 板状の半導体チップ(10)と、
前記半導体チップの少なくとも一面側に配置され、前記半導体チップで発した熱を放出させる放熱構造体(20、30)と、を有する半導体装置であって、
前記放熱構造体は、前記半導体チップ側に配置される第1金属層(21、31)と、
前記第1金属層に対して前記半導体チップと反対側に配置される第2金属層(22、32)と、
前記第1金属層と前記第2金属層との間に配置された接合材(23、33)と、を有し、
前記接合材は、無機材料層(23a、23b、23d、33a、33b、33d)を含み、該無機材料層によって前記第1金属層と前記第2金属層との間が絶縁されている半導体装置。 - 前記無機材料層はガラスにて構成されている請求項1に記載の半導体装置。
- 前記接合材は、前記無機材料層のみによって構成されている請求項1または2に記載の半導体装置。
- 前記接合材は、前記第1金属層に接する前記無機材料層の一部と、前記第2金属層に接する前記無機材料層の他の一部と、前記一部と前記他の一部との間に配置されている共に前記一部と前記他の一部との間を接合する導通材料にて構成された接合膜(23c、33c)とを有している請求項1に記載の半導体装置。
- 前記接合材は、前記無機材料層(23d、33d)に加えて導通材料にて構成された接合膜(23e、33e)を有し、前記第1金属層側に前記無機材料層が配置されると共に前記第2金属層側に前記接合膜が配置された構造、もしくは、前記第1金属層側に前記接合膜が配置されると共に前記第2金属層側に前記無機材料層が配置された構造とされている請求項1に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016118257A JP6638567B2 (ja) | 2016-06-14 | 2016-06-14 | 半導体装置 |
PCT/JP2017/017871 WO2017217149A1 (ja) | 2016-06-14 | 2017-05-11 | 半導体装置 |
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JP2016118257A JP6638567B2 (ja) | 2016-06-14 | 2016-06-14 | 半導体装置 |
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JP2017224689A true JP2017224689A (ja) | 2017-12-21 |
JP6638567B2 JP6638567B2 (ja) | 2020-01-29 |
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JP2016118257A Active JP6638567B2 (ja) | 2016-06-14 | 2016-06-14 | 半導体装置 |
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WO (1) | WO2017217149A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019167403A1 (ja) * | 2018-02-28 | 2019-09-06 | 株式会社村田製作所 | アンテナモジュール |
WO2023017570A1 (ja) * | 2021-08-10 | 2023-02-16 | 三菱電機株式会社 | 半導体装置及びインバータユニット |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11749632B2 (en) | 2021-03-31 | 2023-09-05 | Toyota Motor Engineering & Manufacturing North America, Inc. | Glass-based bonding structures for power electronics |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2503778B2 (ja) * | 1988-10-07 | 1996-06-05 | 三菱マテリアル株式会社 | 半導体装置用基板 |
JP2007300114A (ja) * | 2006-05-02 | 2007-11-15 | Ngk Insulators Ltd | 半導体装置部材及び半導体装置 |
-
2016
- 2016-06-14 JP JP2016118257A patent/JP6638567B2/ja active Active
-
2017
- 2017-05-11 WO PCT/JP2017/017871 patent/WO2017217149A1/ja active Application Filing
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019167403A1 (ja) * | 2018-02-28 | 2019-09-06 | 株式会社村田製作所 | アンテナモジュール |
CN111788743A (zh) * | 2018-02-28 | 2020-10-16 | 株式会社村田制作所 | 天线模块 |
CN111788743B (zh) * | 2018-02-28 | 2021-08-03 | 株式会社村田制作所 | 天线模块 |
US11322819B2 (en) | 2018-02-28 | 2022-05-03 | Murata Manufacturing Co., Ltd. | Antenna module |
WO2023017570A1 (ja) * | 2021-08-10 | 2023-02-16 | 三菱電機株式会社 | 半導体装置及びインバータユニット |
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WO2017217149A1 (ja) | 2017-12-21 |
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