JP2017220670A - 有機薄膜トランジスタの製造方法及び製造装置 - Google Patents
有機薄膜トランジスタの製造方法及び製造装置 Download PDFInfo
- Publication number
- JP2017220670A JP2017220670A JP2017109745A JP2017109745A JP2017220670A JP 2017220670 A JP2017220670 A JP 2017220670A JP 2017109745 A JP2017109745 A JP 2017109745A JP 2017109745 A JP2017109745 A JP 2017109745A JP 2017220670 A JP2017220670 A JP 2017220670A
- Authority
- JP
- Japan
- Prior art keywords
- carbon nanotube
- semiconductor layer
- organic semiconductor
- nanotube structure
- source material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 238000009434 installation Methods 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 212
- 239000004065 semiconductor Substances 0.000 claims abstract description 195
- 239000000463 material Substances 0.000 claims abstract description 130
- 238000001704 evaporation Methods 0.000 claims abstract description 49
- 230000008020 evaporation Effects 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 230000008021 deposition Effects 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- 230000008016 vaporization Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 239000002238 carbon nanotube film Substances 0.000 description 61
- 239000002041 carbon nanotube Substances 0.000 description 59
- 229910021393 carbon nanotube Inorganic materials 0.000 description 59
- 238000000151 deposition Methods 0.000 description 32
- 238000007740 vapor deposition Methods 0.000 description 11
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- KUJYDIFFRDAYDH-UHFFFAOYSA-N 2-thiophen-2-yl-5-[5-[5-(5-thiophen-2-ylthiophen-2-yl)thiophen-2-yl]thiophen-2-yl]thiophene Chemical compound C1=CSC(C=2SC(=CC=2)C=2SC(=CC=2)C=2SC(=CC=2)C=2SC(=CC=2)C=2SC=CC=2)=C1 KUJYDIFFRDAYDH-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VVOPUZNLRVJDJQ-UHFFFAOYSA-N phthalocyanine copper Chemical compound [Cu].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 VVOPUZNLRVJDJQ-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 238000004438 BET method Methods 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004693 Polybenzimidazole Substances 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- TWVGAEQMWFGWDX-UHFFFAOYSA-N acetylene;thiophene Chemical group C#C.C=1C=CSC=1 TWVGAEQMWFGWDX-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- QSQIGGCOCHABAP-UHFFFAOYSA-N hexacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C=C21 QSQIGGCOCHABAP-UHFFFAOYSA-N 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
S1、蒸発源110を提供し、蒸発源110はカーボンナノチューブ構造体112及び有機半導体層源材料114を含み、有機半導体層源材料114をカーボンナノチューブ構造体112の表面に設置する。
S2、蒸発源110は絶縁基板210と対向し且つ間隔をあけて設置し、カーボンナノチューブ構造体112に電磁波信号または電気信号を入力してカーボンナノチューブ構造体112を加熱し、有機半導体層源材料114を蒸発させ、絶縁基板210の表面に有機半導体層230を形成する。
S11、有機半導体層源材料114を溶媒に溶解または均一に分散させて混合物を形成する。
S12、スプレーコート法、スピンコート法或いはディップコート法により混合物をカーボンナノチューブ構造体112に均一に付着させる。
S13、溶媒を蒸発させて有機半導体層源材料114をカーボンナノチューブ構造体112の表面に均一に付着させる。
T1、絶縁基板210の表面に有機半導体層230を形成する。絶縁基板210の表面に有機半導体層230を形成する方法は、以下のステップを含む。
T11、蒸発源110を提供し、蒸発源110はカーボンナノチューブ構造体112及び有機半導体層源材料114を含み、有機半導体層源材料114をカーボンナノチューブ構造体112の表面に設置する。
T12、蒸発源110は絶縁基板210と対向し且つ間隔をあけて設置し、カーボンナノチューブ構造体112に電磁波信号または電気信号を入力してカーボンナノチューブ構造体112を加熱し、有機半導体層源材料114を蒸発させ、絶縁基板210の表面に有機半導体層230を形成する。
T2、有機半導体層230の表面にソース電極220及びドレイン電極240を形成し、且つソース電極220とドレイン電極240を有機半導体層230とそれぞれ電気的に接続させる。
T3、ソース電極220、ドレイン電極240及び有機半導体層230の表面に絶縁層260を形成する。
T4、絶縁層260の表面にゲート電極250を形成する。
N1、絶縁基板210の表面にソース電極220及びドレイン電極240を形成する。
N2、絶縁基板210に有機半導体層230を形成する。絶縁基板210に有機半導体層230を形成する方法は、以下のステップを含む。
N21、蒸発源110を提供し、蒸発源110はカーボンナノチューブ構造体112及び有機半導体層源材料114を含み、有機半導体層源材料114をカーボンナノチューブ構造体112の表面に設置する。
N22、絶縁基板210、ソース電極220及びドレイン電極240は蒸発源110と対向し且つ間隔をあけて設置し、カーボンナノチューブ構造体112に電磁波信号または電気信号を入力してカーボンナノチューブ構造体112を加熱し、有機半導体層源材料114を蒸発させ、絶縁基板210の表面、ソース電極220の表面及びドレイン電極240の表面に有機半導体層230を形成し、ソース電極220及びドレイン電極240を有機半導体層230とそれぞれ電気的に接続させる。
N3、ソース電極220の表面、ドレイン電極240の表面及び有機半導体層230の表面に絶縁層260を形成する。
N4、絶縁層260の表面にゲート電極250を形成する。
M1、絶縁基板210の表面にゲート電極250を形成する。
M2、ゲート電極250の表面に絶縁層260を形成する。
M3、絶縁層260の表面に相互に間隔をあけるソース電極220及びドレイン電極240を形成する。
M4、絶縁層260の表面、ソース電極220の表面及びドレイン電極240の表面に有機半導体層230を形成し、ソース電極220及びドレイン電極240を有機半導体層230と電気的に接続させる。有機半導体層230を形成する方法は以下のステップを含む。
M41、蒸発源110を提供し、蒸発源110はカーボンナノチューブ構造体112及び有機半導体層源材料114を含み、有機半導体層源材料114をカーボンナノチューブ構造体112の表面に設置する。
M42、絶縁層260、ソース電極220及びドレイン電極240は蒸発源110と対向し且つ間隔をあけて設置し、カーボンナノチューブ構造体112に電磁波信号または電気信号を入力してカーボンナノチューブ構造体112を加熱し、有機半導体層源材料114を蒸発させ、絶縁層260の表面、ソース電極220の表面及びドレイン電極240の表面に有機半導体層230を形成する。
P1、絶縁基板210の表面にゲート電極250を形成する。
P2、ゲート電極250の表面に絶縁層260を形成する。
P3、絶縁層260の表面に有機半導体層230を形成する。有機半導体層230を形成する方法は以下のステップを含む。
P31、蒸発源110を提供し、蒸発源110はカーボンナノチューブ構造体112及び有機半導体層源材料114を含み、有機半導体層源材料114をカーボンナノチューブ構造体112の表面に設置する。
P32、蒸発源110は絶縁層260と対向し且つ間隔をあけて設置し、カーボンナノチューブ構造体112に電磁波信号または電気信号を入力してカーボンナノチューブ構造体112を加熱し、有機半導体層源材料114を蒸発させ、絶縁層260の表面に有機半導体層230を形成する。
P4、有機半導体層230の表面に相互に間隔をあけるソース電極220及びドレイン電極240を形成し、ソース電極220及びドレイン電極240を有機半導体層230とそれぞれ電気的に接続させる。
110 蒸発源
112 カーボンナノチューブ構造体
114 有機半導体層源材料
120 支持体
130 真空室
140 電磁信号入力装置
150 第一電気信号入力用電極
152 第二電気信号入力用電極
160 パターン化されたグリッド
200 有機薄膜トランジスタ
210 絶縁基板
220 ソース電極
230 有機半導体層
240 ドレイン電極
250 ゲート電極
260 絶縁層
Claims (4)
- 絶縁基板に有機半導体層、ソース電極、ドレイン電極、ゲート電極及び絶縁層を形成する有機薄膜トランジスタの製造方法であって、
前記有機半導体層の製造方法は、
蒸発源を提供し、前記蒸発源はカーボンナノチューブ構造体及び有機半導体層源材料を含み、前記有機半導体層源材料を前記カーボンナノチューブ構造体の表面に設置する第一ステップと、
前記蒸発源は堆積表面と対向し且つ間隔をあけて設置し、前記カーボンナノチューブ構造体を加熱して前記有機半導体層源材料を蒸発させ、前記堆積表面に前記有機半導体層を形成する第二ステップと、
を含むことを特徴とする有機薄膜トランジスタの製造方法。 - 前記有機半導体層源材料を前記カーボンナノチューブ構造体の表面に設置する方法は、
前記有機半導体層源材料を溶媒に均一に分散させて混合物を形成するステップと、
前記混合物を前記カーボンナノチューブ構造体に均一に付着させるステップと、
前記溶媒を蒸発させて前記有機半導体層源材料を前記カーボンナノチューブ構造体の表面に均一に付着させるステップと、
を含むことを特徴とする請求項1に記載の有機薄膜トランジスタの製造方法。 - 前記蒸発源と前記堆積表面との距離は1マイクロメートル〜10ミリメートルであることを特徴とする請求項1に記載の有機薄膜トランジスタの製造方法。
- 蒸発源と、加熱装置と、を含む有機薄膜トランジスタの製造装置であって、
前記蒸発源はカーボンナノチューブ構造体及び有機半導体層源材料を含み、前記有機半導体層源材料は前記カーボンナノチューブ構造体の表面に設置され、
前記加熱装置は前記カーボンナノチューブ構造体を加熱することに用い、前記カーボンナノチューブ構造体を加熱することによって、前記有機半導体層源材料が蒸発され、有機半導体層が形成されることを特徴とする有機薄膜トランジスタの製造装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610384814.9A CN107464880B (zh) | 2016-06-02 | 2016-06-02 | 有机薄膜晶体管制备方法和制备装置 |
CN201610384814.9 | 2016-06-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017220670A true JP2017220670A (ja) | 2017-12-14 |
JP6588054B2 JP6588054B2 (ja) | 2019-10-09 |
Family
ID=60482459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017109745A Active JP6588054B2 (ja) | 2016-06-02 | 2017-06-02 | 有機薄膜トランジスタの製造方法及び製造装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10388896B2 (ja) |
JP (1) | JP6588054B2 (ja) |
CN (1) | CN107464880B (ja) |
TW (1) | TWI625877B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108807672B (zh) * | 2017-04-28 | 2020-03-17 | 清华大学 | 有机薄膜晶体管及其制备方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000328230A (ja) * | 1999-05-20 | 2000-11-28 | Toray Ind Inc | 有機膜の成膜法 |
US20030230238A1 (en) * | 2002-06-03 | 2003-12-18 | Fotios Papadimitrakopoulos | Single-pass growth of multilayer patterned electronic and photonic devices using a scanning localized evaporation methodology (SLEM) |
JP2008060480A (ja) * | 2006-09-01 | 2008-03-13 | Kyoto Institute Of Technology | 有機半導体膜の製造方法 |
JP2009302057A (ja) * | 2008-06-13 | 2009-12-24 | Qinghua Univ | 面熱源及びその製造方法 |
JP2010034059A (ja) * | 2008-07-25 | 2010-02-12 | Qinghua Univ | 面熱源 |
JP2010257973A (ja) * | 2009-04-20 | 2010-11-11 | Qinghua Univ | 面熱源 |
US20120028408A1 (en) * | 2010-07-30 | 2012-02-02 | Christopher Baker | Distributor heater |
JP2017216449A (ja) * | 2016-05-31 | 2017-12-07 | ツィンファ ユニバーシティ | 有機薄膜太陽電池の製造方法及び製造装置 |
JP2017220454A (ja) * | 2016-06-03 | 2017-12-14 | ツィンファ ユニバーシティ | 有機発光ダイオードの製造方法及び製造装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4982696A (en) * | 1988-01-08 | 1991-01-08 | Ricoh Company, Ltd. | Apparatus for forming thin film |
CN1157807C (zh) * | 2001-11-09 | 2004-07-14 | 清华大学 | 一种有机薄膜场效应晶体管及其制备方法 |
US20100127241A1 (en) * | 2005-02-25 | 2010-05-27 | The Regents Of The University Of California | Electronic Devices with Carbon Nanotube Components |
KR100770258B1 (ko) * | 2005-04-22 | 2007-10-25 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조 방법 |
KR100729097B1 (ko) * | 2005-12-28 | 2007-06-14 | 삼성에스디아이 주식회사 | 증발원 및 이를 이용한 박막 증착방법 |
EP2138998B1 (en) * | 2008-06-04 | 2019-11-06 | Tsing Hua University | Thermoacoustic device comprising a carbon nanotube structure |
US20100122980A1 (en) * | 2008-06-13 | 2010-05-20 | Tsinghua University | Carbon nanotube heater |
US20100126985A1 (en) | 2008-06-13 | 2010-05-27 | Tsinghua University | Carbon nanotube heater |
CN102074429B (zh) * | 2010-12-27 | 2013-11-06 | 清华大学 | 场发射阴极结构及其制备方法 |
JP2013214500A (ja) * | 2012-03-09 | 2013-10-17 | Nitto Denko Corp | 蒸着データ処理装置、有機elデバイスの製造装置及び製造方法 |
CN108611591B (zh) * | 2012-11-06 | 2021-05-04 | Oti领英有限公司 | 用于在表面上沉积导电覆层的方法 |
CN104103695B (zh) * | 2013-04-02 | 2017-01-25 | 清华大学 | 薄膜晶体管及其制备方法 |
-
2016
- 2016-06-02 CN CN201610384814.9A patent/CN107464880B/zh active Active
- 2016-08-29 TW TW105127727A patent/TWI625877B/zh active
-
2017
- 2017-04-14 US US15/488,406 patent/US10388896B2/en active Active
- 2017-06-02 JP JP2017109745A patent/JP6588054B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000328230A (ja) * | 1999-05-20 | 2000-11-28 | Toray Ind Inc | 有機膜の成膜法 |
US20030230238A1 (en) * | 2002-06-03 | 2003-12-18 | Fotios Papadimitrakopoulos | Single-pass growth of multilayer patterned electronic and photonic devices using a scanning localized evaporation methodology (SLEM) |
JP2008060480A (ja) * | 2006-09-01 | 2008-03-13 | Kyoto Institute Of Technology | 有機半導体膜の製造方法 |
JP2009302057A (ja) * | 2008-06-13 | 2009-12-24 | Qinghua Univ | 面熱源及びその製造方法 |
JP2010034059A (ja) * | 2008-07-25 | 2010-02-12 | Qinghua Univ | 面熱源 |
JP2010257973A (ja) * | 2009-04-20 | 2010-11-11 | Qinghua Univ | 面熱源 |
US20120028408A1 (en) * | 2010-07-30 | 2012-02-02 | Christopher Baker | Distributor heater |
JP2017216449A (ja) * | 2016-05-31 | 2017-12-07 | ツィンファ ユニバーシティ | 有機薄膜太陽電池の製造方法及び製造装置 |
JP2017220454A (ja) * | 2016-06-03 | 2017-12-14 | ツィンファ ユニバーシティ | 有機発光ダイオードの製造方法及び製造装置 |
Also Published As
Publication number | Publication date |
---|---|
CN107464880B (zh) | 2020-04-14 |
CN107464880A (zh) | 2017-12-12 |
US20170352825A1 (en) | 2017-12-07 |
US10388896B2 (en) | 2019-08-20 |
TW201803174A (zh) | 2018-01-16 |
TWI625877B (zh) | 2018-06-01 |
JP6588054B2 (ja) | 2019-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10115915B1 (en) | Organic thin film transistor and method for making the same | |
JP5174101B2 (ja) | 薄膜トランジスタ | |
Wu et al. | Organic–inorganic hybrid CH 3 NH 3 PbI 3 perovskite materials as channels in thin-film field-effect transistors | |
US9748421B2 (en) | Multiple carbon nanotube transfer and its applications for making high-performance carbon nanotube field-effect transistor (CNFET), transparent electrodes, and three-dimensional integration of CNFETs | |
KR20120029864A (ko) | 그래핀-폴리머 층상 복합체 및 그의 제조방법 | |
JP6530781B2 (ja) | 有機薄膜太陽電池の製造方法及び製造装置 | |
US10644252B2 (en) | Method for making photodetector | |
JP6588054B2 (ja) | 有機薄膜トランジスタの製造方法及び製造装置 | |
US20170312781A1 (en) | Apparatus and method for making organic thin film | |
US10388880B2 (en) | Apparatus and method for forming organic light emitting diode | |
US20170130326A1 (en) | Evaporating source for vacuum evaporation | |
US20170130327A1 (en) | Vacuum evaporation apparatus | |
US20170130324A1 (en) | Vacuum evaporation method | |
US20170292184A1 (en) | Evaporating source for vacuum evaporation and vacuum evaporation apparatus | |
US20170130323A1 (en) | Vacuum evaporation apparatus | |
JPWO2009093698A1 (ja) | カーボンナノチューブ分散膜の形成方法及び半導体素子の製造方法 | |
TW200525746A (en) | Method for manufacturing field effect semiconductor device | |
TWI388013B (zh) | 薄膜電晶體的製備方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170602 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180622 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180730 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181023 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190403 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190423 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190828 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190911 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6588054 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |