JP2017220619A - Collet and die bonding method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a die bonding method for preventing adhesion of particles to a semiconductor chip, when performing compression for releasing suction, without causing cost increase or lowering of manufacturing efficiency.SOLUTION: A collet (10) includes a shielding part (12) provided to block an opening (11), at the end of the collet (10) on the opposite side to the suction hole (16) side of the opening (11) of the collet (10), so as to face the element formation surface of a semiconductor chip when it is sucked, and multiple through holes (13) provided in the marginal part of the shielding part (12), so as to penetrate the shielding part (12). A die bonding method using the collet (10) is also provided.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a collet and a die bonding method using the collet.

  The semiconductor manufacturing process includes a die bonding process in which a semiconductor wafer is divided by dicing, and the separated semiconductor chips are bonded to a package substrate.

  In the die bonding process, first, a semiconductor wafer is attached to a dicing tape. Thereafter, the semiconductor wafer is divided by dicing, and the semiconductor chip to be die-bonded is pushed up from the dicing tape side with the push-up pins arranged at intervals suitable for the size of the individual semiconductor chips after dicing, and peeled off from the dicing tape.

  Next, using a jig called a collet, the surface of the semiconductor chip is picked up by vacuum suction, the collet is operated, and the surface on which the circuit elements of the picked-up semiconductor chip are formed faces up to a predetermined on the substrate of the package Move to the position. Then, the semiconductor chip is placed on the die bond paste applied on the substrate, and then the vacuum suction is released to release the semiconductor chip from the collet. Then, the semiconductor chip and the substrate are joined by wire bonding between the terminals of the substrate and the semiconductor chip.

  Further, a flip chip process may be included as a process for bonding a semiconductor chip to a substrate. This is applied when mounting a semiconductor chip in which connection electrodes called bumps are provided in advance on the element formation surface. After picking up the semiconductor chip in the same manner as described above, the semiconductor chip is transferred to a mounting tool. Done.

  First, the back surface of the semiconductor chip picked up by the collet is vacuum-sucked with a mounting tool. Thereafter, the transfer is completed by releasing the vacuum of the collet. Next, the mounting tool is operated and moved to a predetermined position on the substrate of the package with the surface on which the circuit elements of the picked-up semiconductor chip are formed facing down. Then, the semiconductor chip is installed at a position where the terminal on the substrate corresponds to the bump of the semiconductor chip, and then the vacuum suction is released to release the semiconductor chip from the mounting tool. Finally, the terminal of the substrate and the bump of the semiconductor chip are bonded using ultrasonic vibration or the like, thereby bonding the semiconductor chip and the substrate.

  Compared to the conventional method, the die bonding method including the flip chip process does not require wire bonding because the bonding to the terminal is performed by bumps, so that the connection resistance can be reduced and the mounting can be reduced. There is an advantage that the area can be reduced.

  Release of vacuum suction in these steps is performed by temporarily pressurizing air from the suction side, that is, discharging a small amount of air from the suction side. This is because the space between the inner side of the collet and the semiconductor chip continues to maintain a reduced pressure state only by stopping the suction, so that the semiconductor chip cannot be separated due to the effect of the atmospheric pressure difference between the outer side of the collet. This pressurizing action in releasing the vacuum suction is called vacuum break.

  However, the die bonding method using the collet as described above may cause a problem that the circuit element of the semiconductor chip is damaged by foreign matter.

  In any of the above steps, a method is used in which the semiconductor chip is peeled off from the dicing tape, the semiconductor chip is picked up by vacuum collet, and then the vacuum suction is released to release the semiconductor chip.

  When the semiconductor chip is peeled off from the dicing tape, the silicon pieces and dicing tape material adhering to the surface and side surfaces of the semiconductor chip generated during dicing are affected by the impact and static electricity generated when the semiconductor chip is peeled off from the dicing tape. Soar. These adhere to the surface and side surfaces of the semiconductor chip together with dust and the like floating in the die bond and flip chip devices. Here, these foreign substances are collectively referred to as particles.

  The accumulation of particles on the surface and side surfaces of the semiconductor chip can cause damage to the semiconductor chip. In particular, when an image sensor (solid-state imaging device) is mounted as a device on a semiconductor chip, if particles adhere to the image sensor or the image sensor is damaged, the semiconductor chip becomes defective due to pixel defects or photosensitivity, The economic loss is enormous.

  In order to solve the above problems, a collet configuration for protecting a semiconductor chip from particles is disclosed in the following document.

  Patent Document 1 discloses a collet that adsorbs a semiconductor chip having bumps. Here, since the space between the suction surface and the surface of the semiconductor chip is created by closely contacting the suction surface of the collet and the bump, the surface of the semiconductor chip can be protected from foreign matter.

  Patent Document 2 discloses a pyramid collet that is formed with a gap from a gripping part and a flat plate part, and is provided with a facing wall that is also spaced from a semiconductor chip to be adsorbed. Here, since the airflow does not pass through the upper part of the semiconductor chip during the adsorption of the semiconductor chip, it is possible to prevent particles from being vacuum-sucked from between the opposing wall and the gripping part and adhering to the surface of the semiconductor chip.

Japanese Patent Laid-Open No. 5-190665 (published July 30, 1993) JP 2006-351848 A (released on December 28, 2006) JP 2003-218134 A (published July 31, 2003)

  When vacuum suctioning a semiconductor chip with a collet, the surface and particles of the semiconductor chip are sucked into the collet suction tube while rebounding in the space between the surface of the semiconductor chip and the surface of the collet holding the semiconductor chip, and the inner wall of the collet Particles accumulate on the surface.

  Furthermore, when releasing the semiconductor chip from the collet, air is discharged from the suction tube side to release the vacuum suction, so that particles accumulated on the inner wall of the collet are discharged together to the semiconductor chip side and adhere to the surface of the semiconductor chip. Or the surface of the semiconductor chip may be damaged.

  In both Patent Documents 1 and 2, by applying pressure in order to release the adsorption of the semiconductor chip, the particles deposited on the inner wall of the collet fall and ride on the air current jetted to the semiconductor chip side. There is a risk of reaching the upper surface of the semiconductor chip.

  In Patent Document 3, the collet suction tube has a double structure of an inner tube and an outer tube. When the semiconductor chip is adsorbed, suction is performed from one tube, and when the semiconductor chip is separated, the pressure of the inner tube and the outer tube is increased. By controlling the difference, a configuration is disclosed in which pressure is not applied to a tube that has been sucked, and particles are sucked into a vacuum source.

  However, in the said structure, the exclusive control apparatus for controlling the pressure difference of an inner tube and an outer tube separately is required, and it leads to the increase in cost. In addition, it is difficult to instantaneously control the pressure difference between the inner tube and the outer tube, and it takes time for the control, and it is considered that the manufacturing efficiency of the semiconductor chip is lowered due to the longer tact time.

  The present invention has been made in view of the above problems, and its purpose is to prevent particles from adhering to a semiconductor chip during pressurization for releasing adsorption without causing an increase in cost or a decrease in manufacturing efficiency. It is to realize a collet that prevents this.

  In order to solve the above problems, a collet according to one aspect of the present invention is a collet that adsorbs a semiconductor chip by vacuum suction from a suction hole, and includes an opening, a shielding portion, and a plurality of through holes. The opening is a cavity provided on the opposite side to the suction hole side in the collet, and communicates with the suction hole, and the shielding part is configured to suck the semiconductor chip when the semiconductor chip is sucked. The opening is provided at the end of the opening opposite to the suction hole side so as to face the element forming surface, and the through hole is formed at the edge of the shielding part. It is provided so that it may penetrate a shielding part.

  According to one aspect of the present invention, there is an effect of reducing particles adhering to a semiconductor chip by discharging particles to the outside of the collet at the time of pressurization inside the collet without causing an increase in cost and a decrease in manufacturing efficiency.

It is the schematic of the collet which concerns on Embodiment 1 of this invention. It is sectional drawing for demonstrating the internal structure of the collet which concerns on Embodiment 1 of this invention. It is the schematic for demonstrating the process of die bonding using the collet which concerns on Embodiment 1 of this invention. It is the schematic for demonstrating the effect of the collet which concerns on Embodiment 1 of this invention. It is the schematic of the collet which concerns on Embodiment 2 of this invention. It is the schematic for demonstrating the process of die bonding using the collet which concerns on Embodiment 2 of this invention. It is the schematic showing the mode of the collet which concerns on Embodiment 3 of this invention, and the collet in use. It is the schematic showing the mode of the collet which concerns on Embodiment 4 of this invention, and the collet in use. It is the schematic showing the condition of the collet which concerns on the modification 1 of this invention, and the collet in use. It is the schematic showing the collet which concerns on the modification 2 of this invention, and its effect. It is a bottom view of the collet which concerns on the modification 3 of this invention.

Embodiment 1
Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. However, the configuration described in this embodiment is merely an illustrative example, and is not intended to limit the scope of the present invention only to that unless otherwise specified. In the drawings described below, components having the same function are denoted by the same reference numerals, and repeated description thereof is omitted.

<Collet structure>
The collet according to the present embodiment is a collet for sucking a semiconductor chip from the other opening by vacuum suction from a suction hole provided on one side and handling the semiconductor chip. In the following embodiments, a description will be given by taking as an example a collet that handles a semiconductor chip for a camera module, in which a solid-state imaging device is provided on an element forming surface serving as a surface, and a microlens is formed on a different surface.

  FIG. 1 is a schematic view showing a configuration of a collet according to the present embodiment. (A) is a front view, (b) is a top view, and (c) is a bottom view. Note that the X-X ′ line and the Y-Y ′ line shown in (b) correspond to the X-X ′ line and the Y-Y ′ line shown in the following drawings.

  As shown in FIGS. 1A to 1C, the collet 10 includes an opening 11, a shielding portion 12, a through hole 13, a tip edge 14, an outer wall 15, and a suction hole 16. The outer wall 15 includes a tube portion 15a, an upper surface portion 15b, and a side surface portion 15c.

  FIG. 1A is a front view of the collet 10. The outer surface of the collet 10 is formed by an outer wall 15 including a tube portion 15a that forms the suction hole 16, a side surface portion 15c that forms the opening 11, and an upper surface portion 15b that connects the tube portion 15a and the side surface portion 15c.

  FIG. 1B is a top view of the collet 10. The suction hole 16 is formed inside the tube portion 15a and is in fluid communication with an opening 11 and an upper surface portion 15b described later. For this reason, when the collet 10 is viewed from directly above, a part of the shielding portion 12 shown in FIG. 1C can be confirmed from the suction hole 16 as shown in FIG.

  FIG. 1C is a bottom view of the collet 10. The opening 11 is formed inside the upper surface portion 15b and the side surface portion 15c. That is, the opening 11 is a cavity that is provided on the side opposite to the suction hole 16 inside the collet 10 and communicates with the suction hole 16. A shield 12 is provided at the end of the opening 11 opposite to the suction hole 16 so as to close the opening 12. A plurality of through holes 13 are provided in the peripheral edge of the shielding part 12 so as to penetrate the shielding part 12. For this reason, the outside of the collet 10, the opening 11, and the suction hole 16 are in fluid communication with each other through the through hole 13.

  Furthermore, the chip edge 14 is provided at the end portion on the opening 11 side of the side surface portion 15c. The chip edge 14 functions as a grip portion that makes line contact with the semiconductor chip when the semiconductor chip is sucked.

<Internal structure of collet>
Next, the internal structure of the collet 10 will be described with reference to FIG. 2 is a cross-sectional view of the collet 10, where (a) is a cross-sectional view taken along the line XX ′ of FIGS. 1 (b) and (c), and (b) is YY of FIGS. 1 (b) and (c). 'Shows a cross-sectional view.

  As shown in FIGS. 1B and 1C, the XX ′ line is on the position where the through hole 13 and the suction hole 16 are present. Therefore, in the cross section shown in FIG. 13 and the suction hole 16 indicate that the inside and outside of the collet 10 are in fluid communication.

  On the other hand, as shown in FIGS. 1B and 1C, the YY ′ line is on the position where the suction hole 16 is present, but on the position where the through hole 13 is not present. In the cross section shown in b), the inside and outside of the collet 10 communicate with each other through the suction hole 16, but the inside and outside of the collet 10 do not communicate with each other by being shielded by the shielding portion 12 on the opening 11 side. It is shown that.

  Hereinafter, in this embodiment and other embodiments and modifications, the cross-sectional view of the collet of the present invention is illustrated through the through hole 13 and the suction hole 16 as in the XX ′ cross section of FIG. Thus, a cross section at a position where the inside and outside of the collet 10 are in fluid communication is shown. In the drawing in which the collet is drawn, the suction hole side is the upper part and the opening side or the shielding part side is the lower part unless otherwise specified.

  As shown in FIG. 2A, the tip edge 14 is provided at the end of the outer wall 15 on the opening 11 side so as to surround the opening 11, and the inner surface thereof is in the direction from the suction hole 16 to the opening 11. The collet 10 is inclined outward from the center. The inner surface of the chip edge 14 has a shape that allows the semiconductor chip to be in close contact with the gap when adsorbing a semiconductor chip to be described later. The shape of the chip edge 14 and the outer wall 15 can be designed as appropriate depending on the shape and size of the semiconductor chip.

  Here, the opening 11 refers to a space inside the collet 10 surrounded by the inner surface of the side surface portion 15c from the lower surface of the upper surface portion 15b of the outer wall 15 to the lower end of the side surface portion 15c. The end portion of the opening 11 opposite to the suction hole 16 indicates the position of the lower end of the side surface portion 15 c and the position of the upper end of the inclination of the chip edge 14. As shown in FIG. 2, the shielding portion 12 is provided so as to close the opening 11 at this position.

  In the present embodiment, the suction hole 13 is a substantially straight cylindrical hole having a substantially circular shape on both the upper surface side and the lower surface side of the shielding portion 12. However, the shape of the through hole 13 may be different between the upper surface and the lower surface of the shielding portion 12 as long as the fluid hole communicates with the suction hole 16 from the outside of the collet 10 through the through hole 13. Inside the through hole 13, the shape of the hole may be changed.

<Die bonding method>
Next, a semiconductor chip die bonding method using the collet of this embodiment will be described with reference to FIG. FIG. 3 is a view for explaining a method of bonding the semiconductor chip 1 onto the die bond paste 6 of the substrate 5 using the collet 10.

  First, the back surface of the semiconductor chip 1 is attached to the adhesive surface on the surface of the dicing tape 3 shown in FIG. 3A, and is divided into individual pieces by a known dicing method. The dicing tape 3 is fixed by, for example, a suction stage (not shown). The semiconductor chip 1 described here as an example includes a solid-state imaging device (not shown) on the main surface serving as the surface, and a microlens 1 ′ is formed on the upper surface. Note that the semiconductor chip actually handled by the collet 10 is not limited to a solid-state imaging device.

  First, as shown in FIG. 3A, the semiconductor chip 1 is pushed up from the lower side of the dicing tape 3 with the push-up pins 4 so as not to break through the dicing tape 3. By this peeling process, the contact area between the semiconductor chip 1 and the dicing tape 3 is reduced, and the semiconductor chip 1 can be easily peeled off from the dicing tape 3. The collet 10 is operated and moved above the semiconductor chip 1 in this state as shown in FIG. At this time, the through hole 13 of the collet 10 is brought close to the semiconductor chip 1.

  Next, as shown in FIG. 3B, the semiconductor chip 1 is sucked from the through hole 13 by vacuum sucking the gas inside the collet 10 from the suction hole 16 of the collet 10 using a vacuum source (not shown). Then, an adhering step of adsorbing the semiconductor chip 1 to the collet 10 is performed by closely contacting the inner surface of the chip edge 14 and the upper end of the semiconductor chip 1 without a gap. At this time, since the inner surface of the chip edge 14 and the upper surface end of the semiconductor chip 1 are in close contact with each other, the air pressure inside the collet 10 is kept at a negative pressure only by stopping the suction from the suction hole 16. The state of being adsorbed on the collet 10 is maintained.

  Subsequently, a bonding process of the semiconductor chip 1 is performed. First, the collet 10 is operated to move the collet 10 so that the semiconductor chip 1 is positioned above the die bond paste 6 of the substrate 5 on which the semiconductor chip 1 is mounted, as shown in FIG. Thereafter, the lower surface of the semiconductor chip 1 is brought into contact with the die bond paste 6 to separate the semiconductor chip 1 from the collet 10.

  At this time, the semiconductor chip 1 can be separated from the collet 10 by slightly applying pressure from the suction hole 16 side and increasing the pressure inside the collet 10. In this way, the semiconductor chip 1 is placed on the die bond paste 6 of the substrate 5.

  Finally, as shown in FIG. 3D, the electrical connection between the semiconductor chip 1 and the substrate 5 is established by wire bonding the terminal 7 of the substrate 5 and the terminal on the upper surface of the semiconductor chip 1 with the gold wire 8. Is done. Through the above steps, die bonding of the semiconductor chip 1 is completed.

<Movement of particles during adsorption>
In the above-described die bonding, the silicon piece of the semiconductor wafer attached to the periphery of the semiconductor chip 1 divided by the dicing due to impact or static electricity generated when the semiconductor chip 1 is peeled off from the dicing tape 3, or dicing The adhesive scraps on the tape 3 soar. In addition to this, debris such as dust and dust floats in the gas inside and outside the collet 10. Here, these minute foreign substances are collectively referred to as particles.

  FIG. 4 is a cross-sectional view of a collet for explaining the movement of particles when a semiconductor chip is picked up or separated using the collet of this embodiment. (A) shows the movement of particles when performing suction to pick up the semiconductor chip, and (b) shows the movement of particles when performing pressurization to release the semiconductor chip.

  When the collet 10 is actually used, the particles 9 are floating inside and outside the collet 10 as shown in FIG. When the collet 10 adsorbs the semiconductor chip 1, the particles 9 floating outside the collet 10 and the particles 9 existing around the semiconductor chip 1 or inside the collet 10 are sucked together with air from the suction holes 16. .

  The solid line in FIG. 4A indicates the air flow when the semiconductor chip 1 is being sucked by the collet 10. When the semiconductor chip 1 is sucked from the suction hole 16 of the collet 10, these particles 9 are sucked into the vacuum source together with air through the through hole 13 of the shielding part 12.

  At this time, since the through-hole 13 is provided at the edge of the shielding part 12, the particles 9 existing outside pass between the side part of the semiconductor chip 1 and the chip edge 14 and above the microlens 1 ′. Do not pass through. For this reason, the microlenses 1 ′ formed on the surface of the semiconductor chip 1 can be prevented from being damaged due to adhesion of the particles 9 or contact with the particles 9. Thereby, the collet 10 of this embodiment can adsorb the semiconductor chip 1 without damaging the semiconductor chip 1 and the microlens 1 ′.

  Further, the sucked particles 9 adhere to the inner surface of the outer wall 15 of the collet 10, and it is assumed that the particles 9 attached to the outer wall 15 fall to the semiconductor chip 1 side due to an impact or the like when the collet 10 is operated. . However, since the shielding part 12 is above the microlenses 1 ′ of the semiconductor chip 1, the dropped particles 9 do not touch the microlenses 1 ′, and damage to the microlenses 1 ′ is prevented.

<Movement of particles during pressurization>
Next, when air is pressurized from the suction hole 16 of the collet 10 in order to separate the adsorbed semiconductor chip 1, the air flows from the suction hole 16 to the opening 11 as shown by the solid line in FIG. Flow occurs. As a result, it is assumed that the particles 9 adhered to the inner surface of the outer wall of the collet 10, the particles 9 existing inside the collet 10 or sent from a vacuum source, ride on the air flow and flow toward the semiconductor chip 1 side. Is done.

  Also at this time, air is discharged to the outside of the collet 10 through the through hole 13 of the shielding part 12. At this time, the through hole 13 is provided at the edge of the shielding part 12, and the shielding part 12 is provided at the end opposite to the suction hole 16 of the opening 11, and is very close to the sucked semiconductor chip 1. Yes. From this, the particle 9 is located in the direction indicated by the solid line, that is, between the side portion of the semiconductor chip 1 and the chip edge 14 rather than the direction indicated by the broken line, that is, the direction toward the microlens 1 ′ of the semiconductor chip 1. It passes easily and is discharged to the outside.

  As a result, even when the pressure from the suction hole 16 is performed, the particles 9 hardly pass over the microlenses 1 ′ of the semiconductor chip 1. The semiconductor chip 1 can be separated without damaging 1 ′.

  Moreover, since the collet 10 of this embodiment can unify the suction source and the pressure source from the suction hole 16 in one system, it can be easily detached from the existing die-bonding apparatus, and no new cost is generated. . In addition, since the semiconductor chip 1 can be easily handled in a short time, there is an advantage that the tact time is not increased and the above-described effects are exhibited without causing a decrease in manufacturing efficiency.

[Embodiment 2]
It will be as follows if other embodiment of this invention is described based on FIGS. For convenience of explanation, members having the same functions as those described in the embodiment are given the same reference numerals, and descriptions thereof are omitted.

<Configuration of collet without tip edge>
FIG. 5 is a cross-sectional view showing the structure of the collet according to the present embodiment. The collet 20 of the present embodiment is different from the collet 10 of the previous embodiment in that the tip edge 14 is not provided on the end of the opening 11 of the outer wall 15. For this reason, the edge part on the opposite side to the suction hole 16 of the shielding part 12, the through-hole 13, and the outer wall 15 exists on a substantially straight line.

  The collet 20 according to the present embodiment is suitable for handling a semiconductor chip having terminals called bumps. Some die bonding methods for semiconductor chips include a step called flip chip in which the semiconductor chip is inverted in the middle of the process in order to join the bumps provided on the element mounting surface of the semiconductor chip and the terminals of the substrate. Exists. The collet 20 can be suitably used when performing die bonding including the flip chip process.

<Flip chip>
FIG. 6 is a schematic view for explaining a die bonding method for mounting a semiconductor chip on a substrate using the collet of this embodiment. In the present embodiment, a die bonding method of bonding a semiconductor chip 1 on which a bump 2 is further formed on a surface of a semiconductor chip 1 on which a microlens 1 ′ is formed, onto a substrate using a collet 20. Will be described as an example.

  First, as in the previous embodiment, the back surface of the semiconductor chip 1 is attached to the adhesive surface on the surface of the dicing tape 3 shown in FIG. 6A, divided by a known dicing method, and separated into individual pieces. Yes. The semiconductor chip 1 described here as an example includes a solid-state imaging device (not shown) on the main surface serving as the surface, and a microlens 1 ′ is formed on the upper surface. Note that the semiconductor chip actually handled by the collet 10 is not limited to a solid-state imaging device.

  Furthermore, a plurality of bumps 2 are formed on the surface of the semiconductor chip 1 where the microlenses 1 'are formed. In the present embodiment, for example, the bump 2 is a gold stud bump, and has a diameter of 0.05 to 0.2 mm and a height from the bottom surface to the apex of 0.05 to 0.2 mm. The bumps 2 are provided at positions where the bumps 2 are sucked from the through holes 13 of the collet 20 when the semiconductor chip 1 is sucked.

  First, as shown in FIG. 6A, the semiconductor chip 1 is pushed up from the lower side of the dicing tape 3 with the push-up pins 4 so as not to break through the dicing tape 3. By this peeling process, the contact area between the semiconductor chip 1 and the dicing tape 3 is reduced, and the semiconductor chip 1 can be easily peeled off from the dicing tape 3. The collet 20 is operated and moved above the semiconductor chip 1 in this state. At this time, the through holes 13 of the collet 20 are brought close to each other so as to correspond to the positions of the bumps 2 of the semiconductor chip 1.

  Next, by using a vacuum source (not shown) from the suction hole 16 of the collet 20 to vacuum-suck the gas inside the collet 20, the bump 2 of the semiconductor chip 1 is sucked from the through-hole 13, and the through-hole 13 and the bump By adhering 2 to the collet 20 without any gap, an adsorption process for adsorbing the semiconductor chip 1 to the collet 20 is performed. At this time, since the through-hole 13 and the bump 2 are in close contact with each other, the pressure inside the collet 20 is kept at a negative pressure only by stopping the suction from the suction hole 16, and the semiconductor chip 1 remains adsorbed on the collet 20. The state of is maintained. At this time, as can be seen from FIG. 6A, the side surface of the semiconductor chip 1 is not closed by a chip edge or the like, but is in an open state.

  Subsequently, unlike the die bonding method of the previous embodiment, a flip chip process for transferring the semiconductor chip 1 from the collet 20 to the mount tool 21 is performed. As shown in FIG. 6B, the mount tool 21 has, for example, a configuration having a suction surface having an end matching the shape of the back surface of the semiconductor chip 1 and a suction hole connected to a vacuum source (not shown). However, the present invention is not limited to this, and a conventionally known mounting tool can be used.

  In the flip chip process, first, the collet 20 is operated to invert the semiconductor chip 1 so that the surface of the semiconductor chip 1 on which the microlenses 1 ′ are formed faces down. Next, the semiconductor chip 1 is held by bringing the mounting tool 21 close so that the suction surface faces the back surface of the semiconductor chip 1 and sucking the back surface of the semiconductor chip 1 from the suction hole. In this state, air is pressurized from the suction hole 16 of the collet 20, the air pressure inside the collet 20 is increased, and the negative pressure is released, whereby the semiconductor chip 1 is separated from the collet 20 and transferred to the mount tool 21. In this way, the transfer of the semiconductor chip 1 from the collet 20 to the mount tool 21 is completed.

  Then, the mount tool 21 is operated, and the semiconductor chip 1 is positioned so that the terminals 22 formed on the substrate 23 on the stage 24 and the bumps 2 of the semiconductor chip 1 correspond to each other as shown in FIG. The mounting tool 21 is moved. Thereafter, the bump 2 is brought into contact with the terminal 22, and the semiconductor chip 1 is separated from the mount tool 21. Also at this time, the semiconductor chip 1 can be separated from the mount tool 21 by applying pressure from the suction hole of the mount tool 21. In this way, the semiconductor chip 1 is placed on the terminal 22 of the substrate 23.

  Finally, the terminals 22 and the bumps 2 of the substrate 23 are joined using ultrasonic vibration or the like, so that the electrical connection between the semiconductor chip 1 and the substrate 23 is established as shown in FIG. The Through the above steps, die bonding of the semiconductor chip 1 is completed.

<Effect of collet 20>
In the die bonding described above, the particles 9 actually exist inside and outside the collet 20 as in the previous embodiment. However, for the same reason as described with reference to FIG. 4, when the semiconductor chip 1 is attracted or separated, the particles 9 do not pass over the microlenses 1 ′ of the semiconductor chip 1. 1 'damage can be prevented.

  Further, in the collet 20, when the distance between the element mounting surface of the semiconductor chip 1 and the shielding portion 12 approaches the height of the bump 2, and when the semiconductor chip 1 is attracted, the side surface of the semiconductor chip 1 is the chip edge. Since it has a structure in which gas is not easily closed and the gas is easily discharged to the outside, it is possible to reduce the passage of the particles 9 on the microlenses 1 ′ of the semiconductor chip 1 more strongly than in the previous embodiment.

  In addition, by using the collet 20, the semiconductor chip 1 provided with the bumps 2 can be bonded to the semiconductor chip 1 using a die bonding method including a flip chip process. In this case, as compared with the die bonding method of the previous embodiment, there is an advantage that an increase in electric resistance can be suppressed because wire bonding is not necessary, and that bonding can be achieved by reducing the mounting area as much as possible.

[Embodiment 3]
The following will describe another embodiment of the present invention with reference to FIG. For convenience of explanation, members having the same functions as those described in any of the above-described embodiments are given the same reference numerals, and descriptions thereof are omitted.

<Collet with protrusions>
FIG. 7 is a cross-sectional view showing the structure of the collet according to the present embodiment. The collet 30 of the present embodiment is different from the collet 20 of the previous embodiment in that, as shown in FIG. 7A, the projection 34 is provided only on the periphery of the through hole 13 on the outer surface opposite to the suction hole 16. This is the point. For example, the protrusion 34 has a size of about 0.1 mm from the end of the through hole 13 and a height of about 0.05 to 0.2 mm, and is provided around each through hole 13.

  FIG. 7B shows a state when the semiconductor chip 1 is adsorbed using the collet 30. When the semiconductor chip 1 is attracted by the collet 30, first, the collet 30 is operated and moved above the semiconductor chip 1. At this time, the through hole 13 of the collet 30 is brought close to the periphery of the microlens 1 ′ of the semiconductor chip 1.

  Next, the semiconductor chip 1 is sucked from the through hole 13 by vacuum sucking the gas inside the collet 30 from the suction hole 16 of the collet 30 using a vacuum source (not shown). By adhering the semiconductor chip 1 without gaps, an adsorption process for adsorbing the semiconductor chip 1 to the collet 30 is performed. At this time, since the protrusion 34 and the semiconductor chip 1 are in close contact with each other, simply stopping the suction from the suction hole 16 keeps the air pressure inside the collet 30 at a negative pressure, and the semiconductor chip 1 remains adsorbed on the collet 30. The state of is maintained.

  In FIG. 7B, an example in which the semiconductor chip 1 that does not have bumps is sucked is given. However, the present invention is not limited to this, and even in the semiconductor chip 1 that has bumps, the bumps are sucked from the protrusions 34. By adhering the bumps, the semiconductor chip 1 having the bumps can be adsorbed. For this reason, the die bonding performed using the collet 30 can be performed by the same method in any of the above-described die bonding methods.

<Effect of collet 30>
In the die bonding described above, the particles 9 actually exist inside and outside the collet 30 as in the above-described embodiment. However, for the same reason as described with reference to FIG. 4, when the semiconductor chip 1 is attracted or separated, the particles 9 do not pass over the microlenses 1 ′ of the semiconductor chip 1. 1 'damage can be prevented.

  Furthermore, in the collet 30, the distance between the element mounting surface of the semiconductor chip 1 and the shielding portion 12 approaches the height of the protrusion 34, or the protrusion 34 and the bump 2, and when the semiconductor chip 1 is attracted, Since the side surface of the chip 1 is not closed by the chip edge or the like and the gas is easily discharged to the outside, the particles 9 pass over the microlens 1 ′ of the semiconductor chip 1 as in the previous embodiment. Can be greatly reduced.

  In addition, the collet 30 can handle any semiconductor chip 1 with or without bumps. Therefore, there is an advantage that various types of semiconductor chips 1 can be handled with the same collet 30.

[Embodiment 4]
The following will describe another embodiment of the present invention with reference to FIG. For convenience of explanation, members having the same functions as those described in any of the above-described embodiments are given the same reference numerals, and descriptions thereof are omitted.

<Collet with taper>
FIG. 8 is a cross-sectional view showing the structure of the collet according to the present embodiment. The collet 40 of this embodiment is different from the collet 10 of the above-described embodiment as shown in FIG. That is, the collet 40 is an outer wall having an inner tapered portion 45d, which is a surface inclined inward from the center of the collet 40 toward the periphery in the direction from the suction hole 16 to the shielding portion 12, instead of the outer wall 15. 45. More preferably, the through hole 13 of the shielding portion 12 also has a shape that is inclined in accordance with the inclination of the inner tapered portion 45d.

  FIG. 8A shows a configuration in which a linear inclination is provided on the inner side of the outer wall 45 from a position not exceeding the upper surface portion of the outer wall 45 to an end portion on the opening 11 side. Actually, the configuration is not limited to this, and only the position of the through hole 13 may be inclined. Further, the angle of inclination is, for example, 45 °, but is not limited thereto.

  With the above configuration, as shown in FIG. 8B, the collet 40, when the adsorbed semiconductor chip 1 is released by pressurization, the pressurized air diffuses radially along the inclination and is discharged outward. Encourage you to. As a result, the particles 9 are more easily discharged to the outside, so that the effect of further reducing the particles 9 flowing above the microlenses 1 ′ of the semiconductor chip 1 is achieved.

  In the present embodiment, the tip edge is provided at the end of the outer wall 45 of the collet 40, and the inclination of the inner tapered portion 45d is integrated with the inclination of the tip edge. However, the present invention is not limited to this, and the inclination angle of the chip edge and the inclination angle of the inner tapered portion 45d may not be the same. Further, the tip edge may not be provided, and the end of the shielding part 12, the through hole 13, and the outer wall 45 on the opposite side to the suction hole 16 is substantially in a straight line as in the above-described embodiment. May be.

  Further, similarly to the above-described embodiment, a configuration in which the shielding portion 12 slightly protrudes only around the through-hole 13 on the outer surface opposite to the suction hole 16 may be employed. In this case, it is preferable that the protruding through-hole is also inclined in accordance with the inclination of the inner tapered portion 45d. Thereby, the structure which further promotes that the gas which passed the protrusion flows to an external direction is realizable.

[Modification 1]
A modification of the present invention will be described below with reference to FIG. For convenience of explanation, members having the same functions as those described in any of the above-described embodiments are given the same reference numerals, and descriptions thereof are omitted.

<Shielding part with taper part>
FIG. 9 is a cross-sectional view showing the structure of the collet according to this modification. As shown in FIG. 9A, the collet 40 ′ of the present modification is replaced with the shielding portion 12 and the upper surface on the suction hole 16 side is inclined in accordance with the inclination of the tapered portion 45d. It is different in that it has a shielding part 42. For this reason, the through-hole 13 is configured to continue from the end portion of the tapered portion 45d on the suction hole 16 side to the end portion of the lower surface on the opposite side of the suction portion 16 of the shielding portion 42.

  According to the above configuration, as shown in FIG. 9B, when the adsorbed semiconductor chip 1 is separated by pressurization, the pressurized air hits the inclined upper surface of the shielding portion 42 and follows the inclined through-hole 13. To diffuse radially and expel it to the outside. As a result, the particles 9 are more easily discharged to the outside, so that the effect of further reducing the particles 9 flowing above the microlenses 1 ′ of the semiconductor chip 1 is achieved.

  In the present modification, a configuration in which a tip edge is provided at the end of the outer wall 45 of the collet 40 ′ and the inclination of the inner tapered portion 45 d is integrated with the inclination of the tip edge is described. However, the present invention is not limited to this, and the inclination angle of the chip edge and the inclination angle of the inner tapered portion 45d may not be the same. Further, there is no need for the chip edge, and the end of the shielding part 42, the through hole 13 and the outer wall 45 opposite to the suction hole 16 is substantially in a straight line as in the above-described embodiment. May be.

  Further, similarly to the above-described embodiment, the shield 42 may be slightly protruded only around the through-hole 13 on the outer surface opposite to the suction hole 16. In this case, it is preferable that the protruding through-hole is also inclined in accordance with the inclination of the inner tapered portion 45d. Thereby, the structure which further promotes that the gas which passed the protrusion flows to an external direction is realizable.

[Modification 2]
The following describes another modification of the present invention with reference to FIG. For convenience of explanation, members having the same functions as those described in any of the above embodiments or modifications will be given the same reference numerals and explanation thereof will be omitted.

<Adhesive>
FIG. 10 is a cross-sectional view showing the structure of the collet according to this modification. The collet 50 of this modification is different from the collet 10 of the above-described embodiment in that an adhesive 51 is provided on the inner surface of the outer wall 15 and the upper and lower surfaces of the shielding portion 12. Although it will not specifically limit if the adhesive 51 has adhesiveness, For example, semi-solid (or the state close | similar to solid) fats and oils and resin can be applied. For example, grease can be suitably used as the adhesive 51.

  According to the said structure, as shown in FIG.10 (b), the particle 9 which flows through the inside of the collet 50 can be adhere | attached with the adhesive 51, and it can prevent scattering. For this reason, when the semiconductor chip 1 is handled, there is an effect that the number of particles 9 flowing inside the collet 50 itself can be reduced by suction or pressurization.

  In this modification, the adhesive 51 is provided on the inner surface of the outer wall 15 and on the upper and lower surfaces of the shielding portion 12. However, the present invention is not limited to this. There is an effect of reducing the number of scattered particles 9.

  Moreover, the adhesive 51 of this modification may be applied to the collet mentioned in the above embodiment or modification. In particular, when applied to the inclined surface of the shielding portion 12 of the collet 40 ′, it is possible to prevent the particles 9 adhering to the inclined surface from falling to the semiconductor chip 1 side through the through hole 13.

[Modification 3]
Another modification of the present invention will be described below with reference to FIG. For convenience of explanation, members having the same functions as those described in any of the above embodiments or modifications will be given the same reference numerals and explanation thereof will be omitted.

<Modification of the shape of the through hole>
FIG. 11 is a schematic view showing the structure of the lower part of the collet according to this modification. The collet 60 of the present modification is different from the collet 10 of the above-described embodiment in that the shielding part 12 has a through-hole 63 whose end is in the shape of a long hole instead of the through-hole 13.

  According to the above configuration, since the amount of gas that can be sucked from one through-hole 63 is increased, the force for adsorbing the semiconductor chip is also increased, and the failure to pick up the semiconductor chip can be reduced. The through-hole 63 of this modification can be applied to any of the above-described embodiments and modifications.

[Summary]
A collet according to aspect 1 of the present invention is a collet that adsorbs a semiconductor chip by vacuum suction from a suction hole, and includes an opening, a shielding portion, and a plurality of through holes, and the opening includes the collet. A cavity provided on the side opposite to the suction hole side and communicating with the suction hole, and the shielding portion faces the element formation surface of the semiconductor chip when adsorbing the semiconductor chip The opening of the opening opposite to the suction hole side is provided so as to close the opening, and the through hole is provided at the edge of the shielding part so as to penetrate the shielding part. ing.

  According to the above configuration, there is an effect that particles are discharged to the outside of the collet at the time of pressurization inside the collet without causing an increase in cost and a reduction in manufacturing efficiency, thereby reducing the adhesion of particles to the semiconductor chip.

  The collet which concerns on aspect 2 of this invention WHEREIN: When adsorb | sucking the said semiconductor chip in the said aspect 1, the side surface of the said semiconductor chip may be open | released.

  According to the above configuration, there is an effect that the gas can easily pass through the side surface of the semiconductor chip during the above-described pressurization, and the particles are further strongly urged to be discharged to the outside of the collet.

  The collet according to aspect 3 of the present invention further includes a projection in the above-described aspect 1 or 2, and the projection is a side of the through hole that faces the element formation surface of the semiconductor chip when the semiconductor chip is adsorbed. It may be provided around.

  According to the above configuration, there is an effect that any semiconductor chip can be handled with one collet regardless of whether the semiconductor chip has bumps or not.

  In the collet according to aspect 4 of the present invention, in the above aspects 1 to 3, the through hole may be inclined from the center of the collet toward the periphery in the direction of the shielding portion from the suction hole side. .

  According to said structure, there exists an effect similar to aspect 2.

  In the collet according to aspect 5 of the present invention, in the above aspects 1 to 4, the through hole may have a long hole shape.

  According to said structure, since the amount of gas which a collet can attract | suck from one through-hole increases, there exists an effect which prevents picking up a semiconductor chip.

  In the collet according to aspect 6 of the present invention, in the above aspects 1 to 5, an adhesive may be provided on at least a part of the inner surface of the collet or the shielding part.

  According to said structure, there exists an effect which reduces the number of the particles which flow through the inside of a collet.

  A die bonding method according to aspect 7 of the present invention is a semiconductor chip die bonding method using the collet according to any one of aspects 1 to 6, wherein a semiconductor chip placed on a dicing tape is placed under the dicing tape. A peeling step of pushing up from the side, an adsorbing step of bringing the through hole of the collet close to a position facing the semiconductor chip, sucking the semiconductor chip from the through hole, and adsorbing the semiconductor chip to the collet; A step of operating the collet to move it above the substrate, pressurizing from the through hole, and separating the semiconductor chip from the collet, thereby installing the semiconductor chip on the substrate; Yes.

  According to the above method, it is possible to provide a die bonding method in which damage to the semiconductor chip is reduced using an existing die bonding apparatus.

  A die bonding method according to Aspect 8 of the present invention is a die bonding method of a semiconductor chip having bumps using the collet according to Aspects 1 to 6, wherein the semiconductor chip placed on a dicing tape is A peeling step of pushing up from the lower side of the dicing tape, an adsorption for bringing the through hole of the collet close to a position facing the semiconductor chip, sucking the bump from the through hole, and adsorbing the semiconductor chip to the collet A flip chip step of moving the semiconductor chip from the collet to the mount tool by reversing the collet and holding it with the mount tool and applying pressure from the through hole, and operating the mount tool. To move the semiconductor chip away from the mounting tool. And a bonding step of placing the semiconductor chip on the substrate.

  According to the above method, it is possible to provide a die bonding method including a flip chip process in which damage to a semiconductor chip is reduced using an existing die bonding apparatus.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention. Furthermore, a new technical feature can be formed by combining the technical means disclosed in each embodiment.

DESCRIPTION OF SYMBOLS 1 Semiconductor chip 1 'Micro lens 2 Bump 3 Dicing tape 4 Pin 5, 23 Substrate 6 Die bond paste 7, 22 Terminal 8 Gold wire 9 Particle 10, 20, 30, 40, 40', 50, 60 Collet 11 Opening 12, 42 Shielding portion 13, 63 Through-hole 13, 16 Suction hole 14 Tip edge 15, 45 Outer wall 21 Mount tool 24 Stage 34 Projection 45 d Inner taper portion 51 Adhesive

Claims (8)

A collet that adsorbs a semiconductor chip by vacuum suction from a suction hole,
An opening, a shielding portion, and a plurality of through holes;
The opening is a cavity provided on the opposite side to the suction hole side inside the collet and communicating with the suction hole.
The shielding portion is provided at the end of the opening opposite to the suction hole side so as to face the element formation surface of the semiconductor chip when the semiconductor chip is sucked. And
The collet according to claim 1, wherein the through hole is provided at an edge of the shielding portion so as to penetrate the shielding portion.   The collet according to claim 1, wherein a side surface of the semiconductor chip is opened when the semiconductor chip is sucked. The collet further comprises a protrusion,
3. The collet according to claim 1, wherein the protrusion is provided around the side of the through hole that faces the element formation surface of the semiconductor chip when the semiconductor chip is sucked. 4.   The collet according to any one of claims 1 to 3, wherein the through hole is inclined from the center of the collet toward the periphery in the direction of the shielding portion from the suction hole side.   The collet according to any one of claims 1 to 4, wherein the through hole has an elongated hole shape.   The collet according to any one of claims 1 to 5, wherein an adhesive is provided on at least a part of the inner surface of the collet or the shielding portion. A die bonding method of a semiconductor chip using the collet according to any one of claims 1 to 6,
A peeling step of pushing up the semiconductor chip installed on the dicing tape from the lower side of the dicing tape,
An adsorption step of bringing the through hole of the collet close to a position facing the semiconductor chip, sucking the semiconductor chip from the through hole, and adsorbing the semiconductor chip to the collet;
A step of operating the collet to move it above the substrate, pressurizing from the through hole, and separating the semiconductor chip from the collet, thereby installing the semiconductor chip on the substrate. A die bonding method characterized by the above. A die bonding method of a semiconductor chip provided with bumps using the collet according to any one of claims 1 to 6,
A peeling step of pushing up the semiconductor chip installed on the dicing tape from the lower side of the dicing tape,
An adsorbing step of bringing the through-hole of the collet close to a position facing the semiconductor chip, sucking the bump from the through-hole, and adsorbing the semiconductor chip to the collet;
Flip chip step of moving the semiconductor chip from the collet to the mounting tool by reversing the collet and holding it with a mounting tool, and applying pressure from the through hole,
A die bonding process comprising: a step of operating the mount tool to move the substrate chip above the substrate, and disposing the semiconductor chip away from the mount tool to place the semiconductor chip on the substrate. Method.

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