JP2009049127A - Production method of semiconductor device and collet chuck - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which high reliability and cost reduction are achieved. <P>SOLUTION: This production method comprises: lifting a semiconductor element 11 located on one main face of a dicing sheet 20 from the other main face of the dicing sheet 20; locating a collet chuck 100 adjacently over the lifted semiconductor element 11; spraying a gas to the surface of the semiconductor element 11 and discharging the gas; peeling the semiconductor element 11 from the dicing sheet 20 while retaining the semiconductor element 11 on the collet chuck 100; and mounting the semiconductor element 11 on a supporting member while retaining the semiconductor element 11 on the collet chuck 100. According to this production method, high reliability of a semiconductor device is achieved. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing method and a suction collet, and more particularly to a semiconductor device manufacturing method and a suction collet in which semiconductor elements separated by a dicing process on a semiconductor substrate are extracted and mounted on a support member.

  When forming a semiconductor device by mounting a semiconductor element such as a semiconductor integrated circuit element on a support member such as a circuit board, as one of means for mounting the semiconductor element, a semiconductor substrate of the semiconductor element (non-electronic circuit formation) A so-called face-up die bonding process is performed in which the surface is mounted facing the circuit board.

Such a conventional die bonding process will be described with reference to FIGS.
The semiconductor substrate 10 on which a plurality of semiconductor elements are formed has a main surface (electronic circuit formation surface) as an upper surface, that is, the other main surface (electronic circuit non-formation surface) is in contact with a dicing sheet (dicing tape) 20. Then, after being fixed on the dicing sheet 20, it is separated into semiconductor elements by a known dicing process (the dicing process is not shown).

And the semiconductor substrate 10 hold | maintained at the dicing sheet | seat 20 in the state in which the separated semiconductor element was located in a line is mounted | worn with the semiconductor element extraction part of a die bonder apparatus.
In the semiconductor element extraction portion of the die bonder apparatus, a push-up pin 31 is disposed below the semiconductor element 11 to be extracted, and an adsorption collet 32 is disposed above the semiconductor element 11 to be extracted (FIG. 17). (See (A)).

In the figure, reference numerals 11 to 13 denote semiconductor elements, and reference numerals 11a to 13a denote electronic circuit forming portions in the semiconductor elements.
First, the push-up pin 31 is raised, and one semiconductor element 11 is pushed up from the other main surface of the dicing sheet 20 to release the contact of the semiconductor element 11 with the dicing sheet 20 (see FIG. 17B). .

  That is, by pushing up by the push-up pins 31, the dicing sheet 20 is elongated, and the contact area between the dicing sheet 20 and the semiconductor element 11 is reduced, thereby reducing the adhesion between the dicing sheet 20 and the semiconductor element 11. And peel.

At this time, a chip 40 may be generated at the peripheral edge of the lower surface of the semiconductor element 11 due to the stress generated as the push-up pin 31 is raised.
Microscopic and lightweight semiconductor pieces (fine particles / powder) generated by the chip 40 of the semiconductor substrate are scattered in the space as the semiconductor element 11 moves upward, and are adjacent to the surface of the semiconductor element 11 and the semiconductor element 11. It adheres to the surface of the semiconductor element 12 or the semiconductor element 13 or the like.

The minute and lightweight semiconductor piece becomes one of “foreign substances” in the manufacturing process of the semiconductor device.
After pushing up by a predetermined amount by the push-up pin 31, the suction collet 32 is lowered from above the semiconductor element 11, and the plate-like member 32a is brought into contact with the upper surface (electronic circuit forming surface) of the semiconductor element 11 (FIG. 18 ( A)).

  At this time, due to the contact of the plate-like member 32a of the suction collet 32, the foreign matter 50 (semiconductor piece) adhering to the surface of the semiconductor element 11 enters the electronic circuit forming portion 11a of the semiconductor element 11, The electronic circuit forming portion 11a is damaged.

Moreover, the foreign material 50 will also adhere to the surface of the plate-like member 32a of the suction collet 32.
Thereafter, the suction collet 32 is raised while maintaining the vacuum suction through the vacuum suction pipe 32b in the suction collet 32, and the semiconductor element 11 is peeled from the dicing sheet 20 (FIG. 18B). )reference).

Then, the semiconductor element 11 sucked and held by the suction collet 32 is positioned on a predetermined position of the circuit board 60 (see FIG. 19A).
At this time, an adhesive member 61 is disposed in advance at a predetermined position of the circuit board 60.

Then, the suction collet 32 is lowered, and the semiconductor element 11 held by the suction collet 32 is pressed to a predetermined position of the circuit board 60 (see FIG. 19B).
By applying such a load, the semiconductor element 11 is fixed on the circuit board 60 due to the tackiness of the adhesive member 61.

  At this time, due to the pressure applied to the plate-like member 32a of the suction collet 32, the foreign matter 50 adhering to the surface of the semiconductor element 11 enters the electronic circuit forming portion 11a of the semiconductor element 11 and the electronic circuit. The forming part 11a is damaged.

Thereafter, suction by the suction collet 32 is released, and the suction collet 32 is moved above the semiconductor element 11 (see FIG. 19C).
At this time, the foreign matter 50 adheres to the surface of the suction collet 32 facing the semiconductor element 11.

In the semiconductor element 11 fixed on the circuit board 60 by such a method, there is a possibility that the electronic circuit does not operate normally due to the presence of the foreign matter 50 as described above.
Subsequently, the second semiconductor element 12 fixed on the dicing sheet 20 is adsorbed again using the adsorbing collet 32 and peeled off from the dicing sheet 20.

  That is, in the semiconductor element extraction portion of the die bonder apparatus, a push-up pin 31 is disposed below the semiconductor element 12 to be extracted, and an adsorption collet 32 is disposed above the semiconductor element 12 to be extracted (FIG. 20A). reference).

  First, the push-up pin 31 is raised, the semiconductor element 12 is pushed up from the other main surface of the dicing sheet 20, and the contact with the dicing sheet 20 in the semiconductor element 12 is released (see FIG. 20B). .

At this time, due to the stress generated as the push-up pin 31 rises, the chip 40 may be generated at the peripheral edge of the lower surface of the semiconductor element 12.
As described above, the minute and lightweight foreign material 50 generated by the chip 40 is scattered with the upward movement of the semiconductor element 12, and the surface of the semiconductor element 12 and other semiconductor elements adjacent to the semiconductor element 12 are scattered. It will adhere to the surface.

  Then, after a predetermined amount of push-up by the push-up pin 31, the suction collet 32 is lowered from above the semiconductor element 12 and brought into contact with the upper surface (electronic circuit forming surface) of the semiconductor element 12 (see FIG. 21A). ).

  At this time, the suction collet 32 is pressed to adhere to the foreign matter 50 that has adhered to the surface of the plate-like member 32a of the suction collet 32 and the surface of the semiconductor element 12 when the semiconductor element 11 is extracted and fixed. The foreign matter 50 that has entered enters the electronic circuit forming portion 11a of the semiconductor element 12 and damages the electronic circuit forming portion 12a.

  Next, while maintaining the vacuum suction by the suction collet 32, the suction collet 32 is raised, and the semiconductor element 12 is peeled from the dicing sheet 20 (see FIG. 21B).

Thereafter, the semiconductor element 12 sucked and held by the suction collet 32 is positioned on a predetermined position of the circuit board and fixed on the circuit board (not shown).
By such a technique, even in the semiconductor element 12 fixed on the circuit board, there is a possibility that the electronic circuit does not operate normally due to the presence of the foreign matter 50 as described above.

  That is, in a method of manufacturing a semiconductor device including such a die bonding method, the semiconductor device can be manufactured with high reliability due to the presence of fine and lightweight semiconductor pieces (fine particles / powder) generated when the semiconductor element is extracted. It cannot be manufactured.

In order to solve such a problem, a method of removing foreign matters by vacuum suction is disclosed (for example, see Patent Document 1).
According to the method disclosed in this document, a suction port for discharging foreign matter communicating with a vacuum system is provided around a collet having a chip suction mechanism, and foreign matter can be removed from the suction port.
Japanese Patent Laid-Open No. 03-079042

However, many foreign substances attached to the surface of the semiconductor chip may be strongly attached due to static electricity, and it is difficult to remove such foreign substances only by means of vacuum suction.
Further, if an attempt is made to forcibly remove foreign matter with a strong suction force, a strong stress is applied to the semiconductor element, and the semiconductor element is likely to be defective such as cracking or chipping.

In particular, semiconductor devices in recent years tend to be thinner, and there is a high possibility of damaging the semiconductor device body if the foreign matter is to be removed with a strong suction force.
Further, in the preceding example, there is no specific example showing at which stage the foreign matter is generated and where the foreign matter adheres to the semiconductor element.

For these reasons, the conventional die bonding process has a problem that the productivity of the semiconductor device cannot be increased.
In the preceding example, an adsorption collet having a pyramidal cross section is used.

The adsorption collet having such a structure depends on the chip size and is uniform for each product, resulting in an increase in manufacturing cost.
The present invention has been made in view of the above points, and an object of the present invention is to provide a method for manufacturing a semiconductor device that can be carried out with high reliability, and an adsorption collet useful for carrying out the manufacturing method.

  In the present invention, in order to solve the above-mentioned problem, a semiconductor element placed on one main surface of a dicing sheet is pushed up from the other main surface side of the dicing sheet, and the adsorbed on the pushed-up semiconductor element A step of disposing a collet, a step of ejecting a gas to the surface of the semiconductor element, a step of discharging the gas, a step of peeling the semiconductor element from the dicing sheet while holding the suction collet, And a step of mounting the semiconductor element on a supporting member while holding the semiconductor element on the adsorption collet.

  Further, in the present invention, an adsorption part that contacts the surface of the object to be adsorbed and adsorbs the object to be adsorbed, a first cover disposed to cover the adsorption part, and a cover that covers the first cover. A second cover provided, a gas ejection portion is disposed in the adsorption portion, and an exhaust mechanism for exhausting a space between the first cover and the second cover is disposed. An adsorbing collet is provided.

  In the present invention, when adsorbing a semiconductor element using an adsorption collet, a gas is ejected from the adsorption collet to the surface of the semiconductor element, and foreign substances that move to the periphery of the semiconductor element due to the ejection of the gas are contained in the adsorption collet. Remove it by suction.

  As a result, high productivity and low cost are realized in semiconductor device manufacturing.

Embodiments of the present invention will be described below with reference to the drawings.
First, FIG. 1 shows a configuration of an adsorption collet 100 that is applied when a semiconductor device manufacturing method according to the present invention is carried out.

FIG. 1 illustrates one stage in the semiconductor element adsorption process using the adsorption collet 100.
That is, the semiconductor substrate 10 on which a plurality of semiconductor elements are formed has a main surface (electronic circuit forming surface) as an upper surface, that is, the other main surface (electronic circuit non-formed surface, back surface) is a dicing sheet (dicing tape). 20 is fixed on the dicing sheet 20 while being in contact with the semiconductor 20, and is separated into semiconductor elements by a known dicing method.

1 shows a state in which the contact with the dicing sheet 20 in one semiconductor element 11 is about to be released by the push-up pin 31.
In the present invention, the adsorption collet 100 having the following configuration is applied in extracting the semiconductor element 11.

  That is, an adsorption collet 100 applied to the present invention includes an adsorption unit 110 that adsorbs a semiconductor element, and a first cover 120 that covers the adsorption unit 110 and surrounds the side surface of the adsorption unit 110, In addition, a second cover 130 is provided so as to cover the first cover 120 and surround the side surface of the first cover 120.

  The adsorbing portion 110 is formed of a rubber member mainly composed of silicon rubber, and has a plate-like member 111 in contact with the semiconductor element 11 whose one main surface is an adsorbed object, and a first member provided on the plate-like member 111. A first pipe 112a disposed in communication with one through hole 111a, and a second pipe 112b disposed in communication with a second through hole 111b provided in the plate-like member 111. And a rod-like support portion 112.

  The rod-like support portion 112 is made of aluminum (Al) or stainless steel, and supports the plate-like member 111 and penetrates holes provided in the first cover 120 and the second cover 130 to reduce friction. The plate member 111 can be moved (moved up and down) with resistance.

  On the other hand, the first cover 120 and the second cover 130 are formed of a metal plate such as aluminum (Al) or stainless steel, and correspond to the outer shape of the semiconductor element 11 to be adsorbed around the adsorption portion 110. And has a rectangular shape.

  That is, the first cover 120 includes a flat portion 120a having a rectangular shape, covering the plate member 111, and a side wall portion 120b extending from each piece of the flat portion 120a in the direction of the semiconductor element 11 to be adsorbed. The side wall portion 120 b surrounds the side surface of the plate-like member 111 and forms a rectangular opening that is slightly smaller than the outer dimension of the semiconductor element 11 to be attracted.

The rod-like support part 112 of the suction part 110 is disposed so as to penetrate substantially the center part of the flat part 120a of the first cover 120.
On the other hand, the second cover 130 includes a flat portion 130a having a rectangular shape above the first cover 120 and a side wall portion 130b extending from each piece of the flat portion 130a toward the attracted semiconductor element 11. The side wall portion 130b surrounds the side wall portion 120b outside the first cover 120 and forms a rectangular opening that is slightly larger than the outer dimension of the semiconductor element 11 to be attracted. Furthermore, the first cover 120 extends to the adsorbed semiconductor element side (downward in the drawing).

  The first cover 120 and the second cover 130 are integrated by a bar-like or plate-like support (not shown) on their side surfaces or upper and lower surfaces, and between the two covers. The existing space can be connected to the outside through the pipes 125 a and 125 b provided in the second cover 130. The arrangement position and the number of arrangement of the pipes 125a and 125b are appropriately selected as necessary.

  The first pipe 112a in the rod-like support part 112 of the adsorption part 110 is connected to a pressure pump or a blower pump (not shown) via a pipe 113a made of a flexible material such as resin. Connected.

On the other hand, the second pipe 112b in the rod-like support portion 112 is connected to a vacuum suction pump (not shown) through a pipe 113b made of a flexible material such as resin.
Further, the space between the first cover 120 and the second cover 130 is a pipe made of a flexible material such as a resin connected to the pipe 125a, the pipe 125b, and the pipes 125a and 125b. A vacuum suction pump (not shown) is connected through 126a and 126b.

  As will be described below with reference to a method for manufacturing a semiconductor device, by using the suction collet 100 having such a configuration, when the semiconductor element to be adsorbed is peeled off from the dicing sheet using the push-up pin, the semiconductor element is placed on the semiconductor element. The foreign matter 50 that adheres or scatters around it can be effectively removed.

And when mounting the said semiconductor element on support members, such as a circuit board, generation | occurrence | production of the damage in the electronic circuit formation surface of the said semiconductor element can be prevented.
A method for manufacturing a semiconductor device using the adsorption collet 100 will be described with reference to FIGS.

In addition, the same code | symbol is attached | subjected to the site | part corresponding to the site | part shown in the said FIG.
Here, the semiconductor device manufacturing method is intended for semiconductor element extraction (pickup) processing after dicing (separation) processing on a semiconductor substrate.

Therefore, here, a description will be given including a dicing (dividing) process step for the semiconductor substrate.
A semiconductor substrate 10 on which a so-called semiconductor element manufacturing wafer process is applied and a plurality of semiconductor elements are formed on one main surface thereof exposes an electronic circuit forming surface of the semiconductor element, and a dicing sheet (dicing tape). ) It is fixed on 20.

  The semiconductor substrate 10 is made of a semiconductor material such as silicon (Si) or gallium arsenide (GaAs), and the semiconductor element 11 has an active element such as a transistor, a passive element such as a capacitor element, and a wiring layer on a surface region thereof. The electronic circuit part formed with this is included.

The semiconductor substrate 10 is fixed on the dicing sheet 20 by an adhesive layer (not shown) disposed on the surface of the dicing sheet 20.
Then, the semiconductor substrate 10 is subjected to a dicing process using, for example, a dicing blade 151, and the semiconductor elements are separated (see FIG. 2A).

In the drawing, a rectangular shape schematically shows a semiconductor element to be singulated.
The form of such dicing processing is shown in an enlarged manner in FIG. FIG. 2B shows the XX ′ cross section of FIG.

  That is, with respect to the semiconductor substrate 10 fixed on the dicing sheet 20, the dicing blade 151 is cut to a depth from the upper surface of the semiconductor substrate 10 to the dicing sheet 20, and the semiconductor substrate 10 includes individual semiconductor elements 11, semiconductors It is divided (divided into pieces) into elements 12 and the like.

In addition, 11a and 12a have shown the electronic circuit formation part in the said semiconductor element.
In this manner, the dicing sheet 20 holding the semiconductor substrate 10 that has been subjected to the dicing process is disposed in a semiconductor element extraction portion in the die bonder apparatus.

  In the semiconductor element extraction portion of the die bonder apparatus, a push-up pin 31 is disposed below the semiconductor element 11 to be extracted, and an adsorption collet 100 is disposed above the semiconductor element 11 to be extracted. (See FIG. 3).

The push-up pin 31 has a plurality of pins 31c arranged on a plate-like pedestal 31b supported by a shaft 31a, and is supported by the shaft 31a so as to be movable up and down.
Further, the suction collet 100 has the configuration shown in FIG.

  When extracting the semiconductor element from the semiconductor substrate 10 fixed on the dicing sheet 20, first, the push-up pin 31 is raised, and the dicing sheet 20 is pushed up to contact the dicing sheet 20 in one semiconductor element 11. Is released (see FIG. 4).

  That is, by pushing up by the push-up pins 31, the dicing sheet 20 is elongated, and the contact area between the dicing sheet 20 and the semiconductor element 11 is reduced, thereby reducing the adhesion between the dicing sheet 20 and the semiconductor element 11. And peel.

At this time, a chip 40 may occur in the peripheral edge of the lower surface of the semiconductor element 11 due to the stress generated as the push-up pin 31 moves up.
Small and lightweight semiconductor pieces (fine particles / powder) generated by the generation of the chip 40 are scattered along with the upward movement of the semiconductor element 11, and are located on the surface of the semiconductor element 11 and around the semiconductor element 11. It adheres to the surfaces of the semiconductor element 12 and the semiconductor element 13.

The semiconductor piece becomes one of “foreign substances” in the subsequent manufacturing process of the semiconductor device.
As described above, the present invention responds to the presence of the foreign substance 50 (semiconductor piece) adhering to the upper surface and / or the periphery of the semiconductor element 11 as follows.

  First, after being pushed up by a predetermined amount by the push-up pin 31, the suction collet 100 is lowered from above the semiconductor element 11 and brought close to the upper surface (electronic circuit forming surface) of the semiconductor element 11.

  That is, the end (lower end) of the side wall 120 b of the first cover 120 in the suction collet 100 is close to the upper surface (electronic circuit forming surface) of the semiconductor element 11 and the side wall of the second cover 130. The suction collet 100 is lowered until the end of the portion 130b is positioned on the side surface of the semiconductor element 11 (see FIG. 5).

  Since the end of the side wall 130 b of the second cover 130 is positioned on the side surface of the semiconductor element 11, a gap is generated between the side wall 130 b of the second cover 130 and the side surface of the semiconductor element 11. ing.

  In the present invention, in such a state, the gas 70, for example, via the first pipe 112a in the rod-like support part 112 of the adsorption part 110 of the adsorption collet 100 and the pipe 113 connected to the first pipe 112a. Air is introduced (arrow A1), and the gas 70 flows out or is ejected (injected) from the first through hole 111a provided in the plate-like member 111 of the adsorption portion 110 (see FIG. 6).

The gas 70 is blown to substantially the center of the upper surface of the semiconductor element 11 and further flows along the upper surface to the outer peripheral edge of the semiconductor element 11.
At the same time or prior to the outflow or ejection of the gas 70, the pipes 125a and 125b disposed on the second cover 130 and the pipes 126a and 126b connected to the pipes 125a and 125b are used. Vacuum suction (decompression treatment) (arrow A2) is performed.

  Due to the outflow or ejection of the gas 70 from the inside of the adsorption collet 100 and vacuum suction through the pipes 125a and 125b, the foreign matter 50 moves outward from the upper surface of the semiconductor element 11, that is, near the outer peripheral edge of the semiconductor element 11. Further, the gas moves in the space between the first cover 120 and the second cover 130 and is discharged to the outside through the pipes 125a and 125b and the pipes 126a and 126b together with the gas 70 and removed.

  At this time, in the other semiconductor element 12 or the semiconductor element 13 located in the vicinity of the semiconductor element 11, the foreign matter 50 attached or floating on the surface in the vicinity of the semiconductor element 11 is also in contact with the semiconductor element 11 and the second element. The air is sucked through the gap between the cover 130 and further moves in the space between the first cover 120 and the second cover 130, and is discharged to the outside through the pipes 125 a and 125 b and the pipes 126 a and 126 b together with the gas 70. And removed.

In such processing, the gas 70 introduced through the pipe 113 is not limited to air, and an inert gas such as nitrogen or argon (Ar) may be applied.
The gas 70 may be ionized in advance. Thereby, the foreign material 50 adhering to the surface of the semiconductor element 11 due to static electricity can be removed.

  The suction part 110 of the suction collet 100 is lowered by the slide-down of the rod-like support part 112 with respect to the upper surface of the semiconductor element 11 from which the foreign substance 50 has been removed by such a method, and the plate-like member 111 is placed on the semiconductor element 11. Contact the surface.

At this time, no foreign substance 50 exists on the upper surface of the semiconductor element 11.
Therefore, even if the plate-like member 111 of the suction collet 100 abuts, damage due to the presence of the foreign matter 50 does not occur on the upper surface of the semiconductor element 11.

  When the plate-like member 111 of the suction collet 100 is in contact with the upper surface of the semiconductor element 11, the second through-hole 111 b and the second through-hole 111 b provided in the plate-like member 111 are inserted into the second through-hole 111 b. Vacuum suction (arrow A3) is performed through the second pipe 112b arranged in communication, and the semiconductor element 11 is sucked and held on the plate-like member 111 of the suction collet 100 (see FIG. 7).

Thereafter, the suction collet 100 is raised, the semiconductor element 11 is peeled from the dicing sheet 20, and the distance from the dicing sheet 20 is further expanded (see FIG. 8).
At this time, a method of lowering the dicing sheet 20 can also be adopted.

  Then, the semiconductor element 11 held by the suction collet 100 is positioned on a predetermined position of the circuit board 60. At this time, an adhesive member 61 is disposed in advance at a predetermined position of the circuit board 60 (see FIG. 9).

The circuit board 60 is sucked and held on a bonding stage (not shown), and is heated to a predetermined temperature as necessary.
The circuit board 60 is made of, for example, an insulating base material formed of an organic insulating resin such as glass-epoxy resin, glass-BT (bismaleimide triazine), or polyimide, or an inorganic insulating material such as ceramic or glass. A conductive layer is formed on the front surface and / or back surface, and further, if necessary, inside (inner layer). The circuit board 60 is also referred to as a support board, a wiring board, or an interposer.

The adhesive member 61 is made of a resin-based material mainly composed of a polyimide-based thermoplastic resin or an epoxy-based thermosetting resin.
Then, the suction collet 100 is lowered, and the semiconductor element 11 held by the suction collet 100 is pressed to a predetermined position on the circuit board 60 (see FIG. 10).

  By applying such a load, the semiconductor element 11 is fixed on the circuit board 60 by the tackiness of the adhesive member 61. The tackiness of the adhesive member 61 may be expressed by heating through the circuit board 60 as necessary.

Thereafter, the suction by the suction collet 100 is released, and the suction collet 100 is moved above the semiconductor element 11.
At this time, the plate-like member 111 is accommodated in the opening of the first cover 120 as the bar-like support portion 112 slides up (see FIG. 11).

And the said adsorption | suction collet 100 is moved on the said dicing sheet 20 from the upper direction of the semiconductor element 11 according to the mechanical structure of a dice bonder.
At this time, the foreign substance 50 does not adhere to the surface 111f of the plate-like member 111 of the suction collet 100, particularly the contact surface to the semiconductor element. That is, the foreign object 50 is not held.

  Therefore, in the process similar to the process shown in FIG. 3, when the next semiconductor element to be extracted, for example, the semiconductor element 12 is to be extracted, a foreign substance 50 is not present on the surface 111f of the plate-like member 111 of the suction collet 100. Is not attached.

  On the other hand, the foreign substance 50 adhering to the surface of the semiconductor element 12 is flown out or ejected from the surface of the semiconductor element 12 in a process similar to the process shown in FIG. It is removed by the discharge.

  The circuit board 60 (see FIG. 12) on which the semiconductor element 11 is mounted and fixed through the above steps is attached to a wire bonder, and the external connection electrode terminal of the semiconductor element 11 and the electrode terminal on the circuit board 60 are connected. The space is connected by a bonding wire (not shown).

Next, at least the semiconductor element mounting portion of the circuit board 60 is resin-sealed.
Thereby, the semiconductor element 11 and the bonding wires are covered with the sealing resin (not shown).

Thereafter, external connection terminals are arranged on the other main surface of the circuit board 60 (the surface on which the semiconductor element 11 is not mounted) to form a semiconductor device (not shown).
According to such a manufacturing method of the present invention, when a semiconductor element held on the dicing sheet 20 is extracted (pickup) by the suction collet, the semiconductor element to be extracted by the foreign material 50 made of fine particles / powder of the semiconductor material. No damage is caused to the surface of the substrate, that is, the electronic circuit forming portion.

Therefore, a semiconductor device formed using the semiconductor element has high reliability.
The adsorption collet 100 applied in the method for manufacturing a semiconductor device according to the present invention is not limited to the configuration shown in the above embodiment, and various modifications are possible as shown below.

(Modification 1)
A first modification of the suction collet 100 is shown in FIG. FIG. 13 shows a state corresponding to the state shown in FIG.

  That is, in this modified example (modified example 1), the adsorbing portion 110 is made of a rubber member mainly composed of silicon rubber, and a plate-like member 111 whose one main surface is in contact with the adsorbed semiconductor element; And a rod-like support portion 112 having a single pipe 112a disposed in communication with one through-hole 111a provided in the plate-like member 111.

  The rod-like support portion 112 supports the plate-like member 111 and passes through holes provided in the first cover 120 and the second cover 130, and moves the plate-like member 111 with a small frictional resistance (vertical movement). ) Is possible.

Other constituent elements are substantially the same as those shown in FIG.
And the pipe 112c in the rod-shaped support part 112 of the said adsorption | suction part 110 is connected to the solenoid valve 115 via the pipe 113c which consists of a flexible material.

  The electromagnetic valve 115 is provided with a first pipe 116a connected to a pressurizing pump or a blower pump (not shown), and a second pipe 116b connected to a vacuum suction pump (not shown). ing.

Other configurations of the first cover 120, the second cover 130, and pipes attached to the cover are the same as those shown in FIG.
That is, in the first modification, the inflow / outflow of the gas 70 and the vacuum exhaust are switched by the operation of the electromagnetic valve 115 with respect to one through hole 111 c provided in the plate-like member 111. .

  When the gas 70 flows out / injects to the upper surface of the semiconductor element 11, the operation of the electromagnetic valve 115 allows the gas 70 to flow in from a pipe 116 a connected to a pressurizing pump or a blower pump (not shown). To do. The gas 70 reaches the through hole 111c through the pipe 113c made of a flexible material and the pipe 112c of the rod-like support 112.

  On the other hand, when the semiconductor element 11 is adsorbed to the plate-like member 111, the electromagnetic valve 115 is operated to suck the vacuum through the second pipe 116b connected to a vacuum suction pump (not shown), The semiconductor element 11 is sucked and held on the plate member 111.

Therefore, according to this structure, the structure of the rod-shaped support part 112 of the adsorption | suction part 110 can be simplified, and the said adsorption | suction part 110 can be reduced in size and weight.
(Modification 2)
Moreover, the modification 2 of the said adsorption | suction collet 100 is shown in FIG. FIG. 14 also shows a state corresponding to the state shown in FIG.

In this modified example (modified example 2), the outer shape of the second cover 130 is different from that shown in FIG.
That is, the side wall portion 130b of the second cover 130 is inclined in a straight line and is expanded into a skirt-extended shape, whereby the opening shape is expanded in the vicinity of the semiconductor element 11 and the end portion (lower end portion) is expanded. ) Are located above the adjacent semiconductor elements 12 and 13.

  As described above, the end (lower end) of the opening formed by the side wall portion 130b in the second cover 130 is positioned above the semiconductor element 12, the semiconductor element 13, and the like, so that the foreign matter 50 is removed from the semiconductor element. Even when it is scattered at a position relatively far from 11, the foreign object 50 can be effectively sucked and discharged.

  That is, in the second modification, the gas 70 passes through the first pipe 112a in the rod-like support part 112 of the adsorption part 110 of the adsorption collet 100 and the pipe 113 connected to the first pipe 112a. For example, air is introduced (arrow A1), and the air flows out and is ejected from the first through hole 111a provided in the plate-like member 111 of the adsorption unit 110.

  At the same time or prior to the outflow or ejection of the gas 70, the pipe 125a, the pipe 125b, and the pipe 126a connected to the pipe 125a and the pipe 125b are disposed on the side wall 130b of the second cover 130. , 126b, vacuum suction (decompression treatment) (arrow A2) is performed.

  By the outflow / ejection of the gas 70 into the adsorption collet 100 and the vacuum suction through the pipe 125, the foreign matter 50 moves outward from the surface of the semiconductor element 11, that is, near the outer peripheral edge of the semiconductor element 11. , Move in the space between the first cover 120 and the second cover 130, and are discharged to the outside through the pipes 125a and 125b and the pipes 126a and 126b and removed.

  At this time, in the other semiconductor element 12 or the semiconductor element 13 located in the vicinity of the semiconductor element 11, the foreign matter 50 adhering to the surface is also enlarged between the semiconductor element 11 and the second cover 130. It is sucked through the created gap and discharged and removed effectively.

(Modification 3)
FIG. 15 shows a third modification of the adsorption collet 100. FIG. 15 also shows a state corresponding to the state shown in FIG.

Even in the present modification (Modification 3), the outer shape of the second cover 130 is different from that shown in FIG.
Other constituent elements are substantially the same as those shown in FIG.

  That is, the side wall 130b of the second cover 130 has an arcuate inclined surface, whereby the opening shape is enlarged in the vicinity of the semiconductor element 11, and the end (lower end) is close to the side. It is assumed that the semiconductor element 12 and the semiconductor element 13 to be positioned are located above.

  As described above, the end (lower end) of the opening of the second cover 130 is positioned above the adjacent semiconductor element 12 and the semiconductor element 13, so that the foreign matter 50 is scattered at a position relatively far from the semiconductor element 11. Even in this case, the foreign substance 50 can be effectively sucked and discharged.

  That is, as in the second modification, in the other semiconductor element 12 or the semiconductor element 13 located in the vicinity of the semiconductor element 11, the foreign substance 50 attached to the surface in the vicinity of the semiconductor element 11 is also affected by the semiconductor element 11. 11 is sucked through the enlarged gap between the second cover 130 and the second cover 130, and is effectively discharged and removed.

(Modification 4)
Further, FIG. 16 shows a fourth modification of the adsorption collet 100. In FIG. FIG. 16 also shows a state corresponding to the state shown in FIG.

In the present modification (Modification 4), the arrangement positions of the pipes 125a and 125b arranged in the second cover 130 are different from those shown in FIG.
Other constituent elements are substantially the same as those shown in FIG.

That is, the pipe 125 a and the pipe 125 b are disposed on the side wall portion 130 b of the second cover 130.
As described above, the arrangement position of the pipe 125a and the pipe 125b is the side wall portion 130b of the second cover 130, so that the foreign matter 50 is sucked closer to the semiconductor element.

The pipes 125a and 125b are connected to a vacuum suction pump (not shown) through the pipes 126a and 126b.
Accordingly, the foreign matter 50 in the semiconductor element 11, the semiconductor element 12, and the semiconductor element 13 is more effectively sucked and easily discharged / removed.

  Of course, the arrangement of the pipes 125a and 125b according to the fourth modification can be applied to the second cover 130 shown in the third or fourth modification as described above.

(Appendix 1) A step of pushing up a semiconductor element placed on one main surface of a dicing sheet from the other main surface side of the dicing sheet;
A step of disposing an adsorption collet on the semiconductor element thus pushed up;
A step of jetting gas to the surface of the semiconductor element;
Discharging the gas;
Peeling the semiconductor element from the dicing sheet while holding the suction collet;
Mounting the semiconductor element on a support member while holding the suction collet;
A method for manufacturing a semiconductor device, comprising:

(Supplementary Note 2) The step of ejecting the gas to the surface of the semiconductor element;
The step of discharging the gas on the surface of the semiconductor element;
The method of manufacturing a semiconductor device according to appendix 1, wherein the steps are performed simultaneously.

(Supplementary note 3) The method for manufacturing a semiconductor device according to supplementary note 1, further comprising a step of ejecting the gas to the surface of the semiconductor element while discharging the gas on the surface of the semiconductor element.
(Additional remark 4) The manufacturing method of the semiconductor device of Additional remark 1 which has the process of ejecting gas to the substantially-central part of the said semiconductor element surface.

(Supplementary note 5) The semiconductor device manufacturing method according to supplementary note 1, wherein the gas ejected to the surface of the semiconductor element is any one of air, nitrogen, and an inert gas.
(Additional remark 6) The adsorption | suction part which contacts the surface of a to-be-adsorbed object, and adsorbs the to-be-adsorbed object,
A first cover disposed to cover the suction portion;
A second cover disposed over the first cover;
An adsorption mechanism comprising: a gas ejection portion disposed in the adsorption portion; and an exhaust mechanism for exhausting a space between the first cover and the second cover. Collet.

(Appendix 7) The first cover has an opening that is smaller than the outer dimension of the object to be adsorbed,
The adsorption collet according to appendix 6, wherein the second cover has an opening that is larger than an outer dimension of the object to be adsorbed.

(Additional remark 8) The said ejection part ejects gas on the surface of a to-be-adsorbed object, The adsorption collet of Additional remark 6 characterized by the above-mentioned.
(Additional remark 9) The gas in the space between the said 1st cover and the said 2nd cover is discharged | emitted via the exhaust mechanism arrange | positioned in the said 2nd cover. 6. The adsorption collet according to 6.

The principal part sectional drawing which shows the structure of the adsorption | suction collet concerning this invention. Sectional drawing (the 1) for demonstrating the manufacturing method of the semiconductor device by this invention. FIG. 3 is an external perspective view (A) and a cross-sectional view (B) (Part 2) for explaining a method for manufacturing a semiconductor device according to the present invention. Sectional drawing (the 3) for demonstrating the manufacturing method of the semiconductor device by this invention. Sectional drawing (the 4) for demonstrating the manufacturing method of the semiconductor device by this invention. Sectional drawing (the 5) principal part for demonstrating the manufacturing method of the semiconductor device by this invention. Sectional drawing (the 6) for demonstrating the manufacturing method of the semiconductor device by this invention. Sectional drawing (the 7) for demonstrating the manufacturing method of the semiconductor device by this invention. Sectional drawing (the 8) principal part for demonstrating the manufacturing method of the semiconductor device by this invention. FIG. 9 is an essential part cross-sectional view (No. 9) for explaining the method of manufacturing the semiconductor device according to the invention. Sectional view (No. 10) for explaining the method for manufacturing a semiconductor device according to the present invention. FIG. 11 is an essential part cross-sectional view (No. 11) for explaining the method of manufacturing the semiconductor device according to the invention. The principal part sectional drawing which shows the modification 1 of the adsorption collet concerning this invention. The principal part sectional drawing which shows the modification 2 of the adsorption collet concerning this invention. The principal part sectional drawing which shows the modification 3 of the adsorption | suction collet concerning this invention. The principal part sectional drawing which shows the modification 4 of the adsorption | suction collet concerning this invention. Sectional drawing (the 1) principal part for demonstrating the manufacturing method of the conventional semiconductor device. Sectional drawing (the 2) principal part for demonstrating the manufacturing method of the conventional semiconductor device. Sectional drawing (the 3) for demonstrating the manufacturing method of the conventional semiconductor device. Sectional drawing (the 4) for demonstrating the manufacturing method of the conventional semiconductor device. Sectional drawing (the 5) for demonstrating the manufacturing method of the conventional semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor substrate 11, 12, 13 Semiconductor element 11a, 12a Electronic circuit formation part 20 Dicing sheet 31 Push-up pin 31a Shaft 31b Plate-shaped base 31c Pin 32,100 Adsorption collet 32a, 111 Plate-shaped member 32b Vacuum suction pipe 50 Foreign material 60 Circuit board 61 Adhesive member 70 Gas 110 Adsorption part 111a, 111b, 111c Through-hole 111f Surface 112 Bar-shaped support part 112a, 112b, 112c, 113, 113a, 113b, 113c, 116a, 116b, 125, 125a, 125b, 126a, 126b Pipe 115 Solenoid valve 120 First cover 120a, 130a Flat part 120b, 130b Side wall part 130 Second cover 151 Dicing blade

Claims (5)

A step of pushing up the semiconductor element placed on one main surface of the dicing sheet from the other main surface side of the dicing sheet;
A step of disposing an adsorption collet on the semiconductor element thus pushed up;
A step of jetting gas to the surface of the semiconductor element;
Discharging the gas;
Peeling the semiconductor element from the dicing sheet while holding the suction collet;
Mounting the semiconductor element on a support member while holding the suction collet;
A method for manufacturing a semiconductor device, comprising: The step of ejecting the gas to the surface of the semiconductor element;
The step of discharging the gas on the surface of the semiconductor element;
The method of manufacturing a semiconductor device according to claim 1, wherein:   2. The method of manufacturing a semiconductor device according to claim 1, wherein the gas ejected to the surface of the semiconductor element is any one of air, nitrogen, or an inert gas. An adsorbing part that contacts the surface of the object to be adsorbed and adsorbs the object to be adsorbed;
A first cover disposed to cover the suction portion;
A second cover disposed over the first cover;
An adsorption mechanism comprising: a gas ejection portion disposed in the adsorption portion; and an exhaust mechanism for exhausting a space between the first cover and the second cover. Collet. The first cover has an opening that is smaller than the outer dimension of the object to be adsorbed,
The adsorption collet according to claim 4, wherein the second cover has an opening that is larger than an outer dimension of the object to be adsorbed.

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