JP2017201055A - 石英起因汚染物低減pe−ald法 - Google Patents
石英起因汚染物低減pe−ald法 Download PDFInfo
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Abstract
Description
図1は、PE−ALDシステム10の一例を示す模式図である。PE−ALDシステム10に関しては種々の構成が可能であり、図1に示すPE−ALDシステム10は、採用可能な基本的な構成の一つである。PE−ALDシステム10は、反応チャンバ20を備えている。反応チャンバ20は、頂壁22、底壁23および円筒状側壁24を有する。頂壁22、底壁23および円筒状側壁24は、反応チャンバ内部26を規定する。ステージ30は、反応チャンバ内部26内に存在する。ステージ30は、基板40を支持する。基板40は、上面42を有する。上面42には、後述するように、PE−ALD処理を介して薄膜層(「薄膜」)142が形成される。一例では、基板40は、半導体製造に用いられるシリコンウエハである。真空ポンプ46は、反応チャンバ内部26に接続され、反応チャンバ内部26の圧力を、(例えば、約10ミリトール(mTorr)から約500ミリトール(mTorr)の範囲内で)制御する。また、真空ポンプ46は、反応チャンバ内部26における、基板40の領域と頂壁22に近い領域との間に圧力差を規定するために使用される。
図2に示すように、供給ガス112は、供給ガスとしてプラズマ管120の流入端122に入り、プラズマ管120の内部126を進む。RF源134は、RF周波数信号を複数巻コイル130に供給する。RF周波数信号は、プラズマ管120の内部126において、供給ガス112からH系プラズマ114を誘導形成する。より具体的には、供給ガス112が流出端123へ流れると、複数巻コイル130からのRFエネルギーは、(希薄化された)供給ガス112中で方位角電流を駆動する。これにより、H系プラズマ114の形成が開始される。H系プラズマ114は、一つ以上の反応種116を含む。反応種116は、例えば、HラジカルおよびNラジカル(すなわち、H*およびN*)、あるいは、H、ArおよびNラジカル(すなわち、H*、Ar*およびN*)である。これらは、反応チャンバ内部26へ流入する。Arは、一般に、供給ガス112中でのHと組み合わせて用いられ、H2ガスからのH*の形成を促進する。したがって、一例では、H系プラズマにおける主たる反応物(すなわち、反応種)は、H*である。N*ラジカルは、実際には、反応種116の一つではない。そのため、図2では、括弧書き「(N*)」で示される。なぜなら、ラジカルN*は、実際には、基板40の上面42または薄膜142と、あらゆる実質的な方法では反応しないからである。このことは、通常、Ar*についても当てはまる。Ar*は、プラズマ形成処理の副産物である。ここで、供給ガス112中のArは、H*の形成を促進するために使用される。上述したように、H*が、H系プラズマ114中の唯一の反応種116ではないにしても、最も重要なものである。他の例では、供給ガス112は、O2、CH4またはH2Sなどの追加のガスを含み得る。O2、CH4またはH2Sは、H系プラズマ114中で、追加の反応種O*、C*およびS*をそれぞれ生成する。
Claims (22)
- 石英起因汚染物を減少させながらプラズマ助長原子層堆積を実行する方法であって、
前駆体ガスを用いて基板上に初期薄膜を形成することと、
前記前駆体ガスをパージすることと、
石英プラズマ管内で、供給ガスから、一つ以上の反応種を含む水素系(H系)プラズマを誘導的に形成することと、
前記一つ以上の反応種を前記基板へ向け、前記一つ以上の反応種を前記初期薄膜と反応させることと
を備え、
前記供給ガスは、基本的に、水素および窒素、または、水素、アルゴンおよび窒素の何れかから成り、前記窒素は、前記供給ガス中に2体積%以下で含まれる、方法。 - 前記基板は、反応チャンバの内部に存在し、前記水素系プラズマは、前記反応チャンバの内部に接続されたプラズマ源中で形成され、
前記一つ以上の反応種を前記基板へ向ける工程は、前記水素系プラズマと前記反応チャンバの内部との間の圧力差を形成することを含む、請求項1に記載の方法。 - 窒素および水素、または、窒素、水素およびアルゴンを混合することによって、前記供給ガスを形成することをさらに備え、前記窒素は、N2ガスまたはNH3ガスの形態で添加され、前記水素は、H2ガスの形態で添加される、請求項1または2に記載の方法。
- 前記窒素は、前記供給ガス中に0.1体積%から2体積%の間で含まれる、請求項1から3の何れか1項に記載の方法。
- 前記窒素は、前記供給ガス中に0.5体積%から1.5体積%の間で含まれる、請求項4に記載の方法。
- 前記窒素は、前記供給ガス中に1体積%以下の割合で含まれる、請求項1から3の何れか1項に記載の方法。
- 前記前駆体ガスは、ニオブ、タングステン、モリブデン、アルミニウム、ガリウム、インジウム、ホウ素、銅、ガドリニウム、ハフニウム、ケイ素、タンタル、チタン、バナジウムおよびジルコニウムのうちの少なくとも一つを含む、請求項1から6の何れか1項に記載の方法。
- 前記石英起因汚染物の減少量は、前記供給ガスにNを使用しない場合と比較して50倍以上である、請求項1から7の何れか1項に記載の方法。
- 前記石英起因汚染物の減少量は、前記供給ガスに窒素を使用しない場合と比較して20倍以上である、請求項1から7の何れか1項に記載の方法。
- 前記石英起因汚染物の減少量は、前記供給ガスに窒素を使用しない場合と比較して2倍以上である、請求項1から7の何れか1項に記載の方法。
- 石英プラズマ管を含むプラズマ反応システムで用いる水素系(H系)プラズマを形成する方法であって、
前記石英プラズマ管内に供給ガスを流すことと、
前記石英プラズマ管内を流れる前記供給ガスから前記H系プラズマを誘導的に形成することと
を備え、
前記供給ガスは、HおよびN、または、H、ArおよびNの何れかから成り、
前記供給ガス中の前記Nの量は、前記供給ガスの0.1体積%から2体積%の間である、方法。 - 前記供給ガス中の前記Nは、前記供給ガス中に0.5体積%から1.5体積%の間で含まれる、請求項11に記載の方法。
- 前記供給ガス中の前記Nは、前記供給ガス中に0.1体積%から1体積%の間で含まれる、請求項11に記載の方法。
- 前記H系プラズマは、少なくとも一つの反応種を含み、
プラズマ助長原子層堆積(PE−ALD)処理において前記少なくとも一つの反応種を使用して、基板上に薄膜を形成することをさらに備える、請求項11から13の何れか1項に記載の方法。 - 前記H系プラズマを使用することにより、前記PE−ALD処理において形成される前記薄膜の石英起因汚染物量が、前記供給ガスにNを使用しない場合と比較して50倍以上減少する、請求項14に記載の方法。
- 前記H系プラズマを使用することにより、前記PE−ALD処理において形成される前記薄膜の石英起因汚染物量が、前記供給ガスにNを使用しない場合と比較して20倍以上減少する、請求項14に記載の方法。
- 前記H系プラズマを使用することにより、前記PE−ALD処理において形成される前記薄膜の石英起因汚染物量が、前記供給ガスにNを使用しない場合と比較して2倍以上減少する、請求項14に記載の方法。
- 前記PE−ALD処理は、ニオブ、タングステン、モリブデン、アルミニウム、ガリウム、インジウム、ホウ素、銅、ガドリニウム、ハフニウム、ケイ素、タンタル、チタン、バナジウムおよびジルコニウムのうちの少なくとも一つを有する前駆体ガスを使用することを含む、請求項14から17の何れか1項に記載の方法。
- NおよびH、または、N、H、およびArを混合することによって前記供給ガスを形成することをさらに備え、前記Nは、N2ガスまたはNH3ガスの形態で添加され、前記Hは、H2ガスの形態で添加される、請求項14から18の何れか1項に記載の方法。
- 前記少なくとも一つの反応種は、H*であり、前記方法は、前記H*を初期薄膜と反応させ、前記基板上に前記薄膜を形成することをさらに備える、請求項14から19の何れか1項に記載の方法。
- 前記供給ガスは、基本的に、HおよびN、または、H、NおよびArの何れかから成る、請求項14から20の何れか1項に記載の方法。
- 前記少なくとも一つの反応種は、H*、並びに、O*、C*およびS*のうちの少なくとも一つを含む、請求項14に記載の方法。
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63166971A (ja) * | 1986-12-27 | 1988-07-11 | Anelva Corp | 表面処理方法および装置 |
JPH05160042A (ja) * | 1991-12-09 | 1993-06-25 | Matsushita Electric Ind Co Ltd | プラズマ生成装置および半導体薄膜のプラズマ処理方法 |
JPH088212A (ja) * | 1994-06-22 | 1996-01-12 | Sony Corp | プラズマcvd方法 |
JPH08188877A (ja) * | 1995-01-09 | 1996-07-23 | Sumitomo Metal Ind Ltd | TiN膜の成膜方法及び装置 |
JP2002299263A (ja) * | 2001-04-03 | 2002-10-11 | Matsushita Electric Ind Co Ltd | 半導体装置の作製方法 |
JP2004263306A (ja) * | 1994-06-03 | 2004-09-24 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
JP2005133217A (ja) * | 2003-10-31 | 2005-05-26 | Internatl Business Mach Corp <Ibm> | 窒化タンタルおよび二重層のプラズマ強化原子層堆積法 |
US20100092696A1 (en) * | 2008-10-14 | 2010-04-15 | Asm Japan K.K. | Method for forming metal film by ald using beta-diketone metal complex |
JP2011097096A (ja) * | 2007-08-31 | 2011-05-12 | Tokyo Electron Ltd | プラズマ処理装置及び酸化膜の形成方法 |
JP2014156622A (ja) * | 2013-02-14 | 2014-08-28 | Riverbell Kk | 大気圧誘導結合プラズマによる薄膜形成方法及び薄膜形成装置 |
JP2015120977A (ja) * | 2013-11-27 | 2015-07-02 | ビーコ・エーエルディー インコーポレイテッド | 還元プロセスを用いた分子層堆積 |
JP2015188065A (ja) * | 2014-03-26 | 2015-10-29 | ウルトラテック インク | オゾンプラズマを用いた酸素ラジカル強化原子層蒸着 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7150789B2 (en) | 2002-07-29 | 2006-12-19 | Micron Technology, Inc. | Atomic layer deposition methods |
US8679287B2 (en) * | 2005-05-23 | 2014-03-25 | Mks Instruments, Inc. | Method and apparatus for preventing ALD reactants from damaging vacuum pumps |
US20070069383A1 (en) * | 2005-09-28 | 2007-03-29 | Tokyo Electron Limited | Semiconductor device containing a ruthenium diffusion barrier and method of forming |
US20100183825A1 (en) * | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
JP5193913B2 (ja) * | 2009-03-12 | 2013-05-08 | 東京エレクトロン株式会社 | CVD−Ru膜の形成方法および半導体装置の製造方法 |
TWI588286B (zh) | 2013-11-26 | 2017-06-21 | 烏翠泰克股份有限公司 | 經改良的電漿強化原子層沉積方法、周期及裝置 |
-
2017
- 2017-01-27 US US15/417,896 patent/US20170241019A1/en not_active Abandoned
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- 2017-02-20 TW TW106105634A patent/TWI613315B/zh not_active IP Right Cessation
- 2017-02-21 KR KR1020170022764A patent/KR20170098710A/ko unknown
- 2017-02-22 CN CN201710094377.1A patent/CN107099783A/zh active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63166971A (ja) * | 1986-12-27 | 1988-07-11 | Anelva Corp | 表面処理方法および装置 |
JPH05160042A (ja) * | 1991-12-09 | 1993-06-25 | Matsushita Electric Ind Co Ltd | プラズマ生成装置および半導体薄膜のプラズマ処理方法 |
JP2004263306A (ja) * | 1994-06-03 | 2004-09-24 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
JPH088212A (ja) * | 1994-06-22 | 1996-01-12 | Sony Corp | プラズマcvd方法 |
JPH08188877A (ja) * | 1995-01-09 | 1996-07-23 | Sumitomo Metal Ind Ltd | TiN膜の成膜方法及び装置 |
JP2002299263A (ja) * | 2001-04-03 | 2002-10-11 | Matsushita Electric Ind Co Ltd | 半導体装置の作製方法 |
JP2005133217A (ja) * | 2003-10-31 | 2005-05-26 | Internatl Business Mach Corp <Ibm> | 窒化タンタルおよび二重層のプラズマ強化原子層堆積法 |
JP2011097096A (ja) * | 2007-08-31 | 2011-05-12 | Tokyo Electron Ltd | プラズマ処理装置及び酸化膜の形成方法 |
US20100092696A1 (en) * | 2008-10-14 | 2010-04-15 | Asm Japan K.K. | Method for forming metal film by ald using beta-diketone metal complex |
JP2014156622A (ja) * | 2013-02-14 | 2014-08-28 | Riverbell Kk | 大気圧誘導結合プラズマによる薄膜形成方法及び薄膜形成装置 |
JP2015120977A (ja) * | 2013-11-27 | 2015-07-02 | ビーコ・エーエルディー インコーポレイテッド | 還元プロセスを用いた分子層堆積 |
JP2015188065A (ja) * | 2014-03-26 | 2015-10-29 | ウルトラテック インク | オゾンプラズマを用いた酸素ラジカル強化原子層蒸着 |
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