JP2017183308A - 有機半導体材料及び有機半導体デバイス - Google Patents
有機半導体材料及び有機半導体デバイス Download PDFInfo
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- JP2017183308A JP2017183308A JP2016063142A JP2016063142A JP2017183308A JP 2017183308 A JP2017183308 A JP 2017183308A JP 2016063142 A JP2016063142 A JP 2016063142A JP 2016063142 A JP2016063142 A JP 2016063142A JP 2017183308 A JP2017183308 A JP 2017183308A
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
【解決手段】本発明の有機半導体材料は、中央にベンゼン環を有し、ピリジン環にアルケニル基が結合した構造を両端に有し、そのアルケニル基の置換基として電子求引性のシアノ基を導入することで、分子全体に電荷移動に関与するπ電子軌道が広がり、また、従来π電子軌道を深くするために必要であった電子求引性基であるフッ素やトリフルオロメチル基等を付与することなく、π電子軌道のエネルギー準位は深くすることができる。
【選択図】なし
Description
また、含窒素シアノスチリル誘導体が合成され、その分子構造が詳細に解析されているが、半導体特性や半導体デバイスとしての有効性については全く開示されていない(非特許文献5、6)。
500〜6000回転で5〜120秒処理することにより行われる。
「化合物(2)の合成」
上記合成例1と同様な手法で、化合物(1)、及び化合物(3)を得た。
「有機トランジスタ素子作製」
本発明の有機半導体材料の特性を、図2に示す構成の有機電界効果トランジスタを作成し、評価を行った。まず、300nmの熱酸化膜付きシリコンウェハ(nドープ)をゲート電極およびゲート絶縁膜とし、その酸化膜表面にCYTOPを3000rpmで120秒スピンコートした。この膜の表面に、真空蒸着法(蒸着条件:減圧4.0×10−6torr程度)により、化合物(2)を膜厚が約50nmとなる条件で成膜して、有機半導体層を形成した。更に、この有機半導体層の表面上に、シャドウマスクを用いて、真空蒸着法によりAuからなる、膜厚が約50nmのソース電極及びドレイン電極を形成することで、有機電界効果トランジスタを作製した。なお、形成したソース電極及びドレイン電極のチャネル長(L)は20μm、チャネル幅(W)が2mmであった。 ・
得られた有機薄膜トランジスタのソース・ドレイン電極間に100Vの電圧を印加し、真空下(10−5torr以下)にて、ゲート電圧を−20Vから100Vの範囲で変化させ、それぞれの有機薄膜トランジスタの出力特性及び伝達特性を評価した。その結果、素子作成後の測定で、1.0 × 10−1 cm2・Vsの電子移動度が得られた。
実施例1において、化合物(2)の代わりに、化合物(1)を使用した他は同様の操作を行い、有機電界効果トランジスタを作製した。得られた素子について、実施例1と同様にトランジスタ特性を評価したところ、0.8× 10−1 cm2・Vsの電子移動度が得られた。
実施例1において、化合物(2)の代わりに、化合物(3)を使用した他は同様の操作を行い、有機電界効果トランジスタを作製した。得られた素子について、実施例1と同様にトランジスタ特性を評価したところ、0.9 × 10−1 cm2・Vsの電子移動度が得られた。
有機半導体層をウェット成膜にて形成した図2に示す構成の有機電界効果トランジスタを作成し、評価を行った。約300nmの厚みの熱成長酸化ケイ素層を有するシリコンウェハ(nドープ)を、硫酸−過酸化水素水溶液で洗浄し、イソプロピルアルコールで煮沸した後、乾燥した。得られた熱成長酸化ケイ素層を有するシリコンウェハ(nドープ)をホットプレート上で80℃に加熱し、その上から、化合物(2)のクロロベンゼン(沸点132℃)溶液0.5wt%を滴下し、溶媒を乾燥させることで、有機半導体層を形成した。ソース電極およびドレイン電極の形成は、実施例1と同様の操作を行い、有機電界効果トランジスタを作製した。得られた素子を実施例1と同様にトランジスタ特性を評価したところ、1.5 × 10−1 cm2・Vsの電子移動度が得られた。
実施例4でトランジスタ特性評価を行った有機薄膜トランジスタ素子を大気暴露し、大気下にて特性評価を行ったところ、1.2 × 10−1 cm2・Vsの電子移動度が得られた。
実施例1において、化合物(2)の代わりに、比較化合物(1)を使用した他は同様の操作を行い、有機電界効果トランジスタを作製した。
2 ゲート電極、3 絶縁層
4 有機半導体
5 ソース電極、6 ドレイン電極
7 有機光起電力素子用基板
8 正極
9 有機半導体層
9−a 電子供与性有機半導体層、9−b 電子受容性有機半導体層
10 負極
Claims (6)
- 請求項1に記載の有機半導体材料を含有することを特徴とする有機半導体膜。
- 請求項1に記載の半導体材料を、沸点が50℃以上の有機溶剤に溶解し、濃度0.01〜10wt%の溶液とし、これを30℃〜溶剤の沸点よりも20℃以下の温度範囲で加熱した基板に塗布して、溶媒を乾燥することを特徴とする有機半導体膜の製造方法。
- 請求項2に記載の有機半導体膜を用いることを特徴とする有機半導体デバイス。
- 請求項2に記載の有機半導体膜を半導体層に用いることを特徴とする有機薄膜トランジスタ。
- 請求項2に記載の有機半導体膜を半導体層に用いることを特徴とする有機光起電力素子。
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CN116546824A (zh) * | 2022-05-07 | 2023-08-04 | 浙江大学 | 一种有机场效应晶体管及其制备方法 |
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