JP2017182077A - Display device manufacture method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the power consumption of a display device.SOLUTION: The display device has a function of turning over display panels, like the pages of a paper book, and drives pixels while turning over display panels. In particular, the display device includes display panels having pixels arranged thereon and a support part of the display panels; and pixels are driven while the display panels are turned over with the support part as a support point, and driving of the pixels is stopped after the display panels are turned over.SELECTED DRAWING: Figure 1

Description

  The technical field relates to a display device and a driving method thereof.

In recent years, as a display device, an electronic book in which a display panel is spelled into a book has been developed (for example, Patent Document 1). Such a display device, like a paper book, can turn the display panel to see the screen.

JP 2009-175767 A

  An object of a display device is to reduce power consumption.

The disclosed display device has a function of turning a display panel, and drives a pixel when the display panel is turned. Hereinafter, one embodiment of the present invention will be described.

One embodiment of the present invention is a display panel in which pixels having a memory property capable of holding a video signal are arranged, and a support portion that rotatably supports the other end of the display panel with one end of the display panel as a free end And a sensor that outputs a detection signal when the display panel is rotating, and a pixel that drives the pixel by inputting a video signal to the display panel when the detection signal is output, and the pixel when the detection signal is not output And a drive circuit that stops driving. In this specification, the rotation refers to an operation of turning a display panel like a paper book.

In a display device, power consumption can be reduced by shortening the pixel driving time.

FIG. 14 illustrates an example of a structure of a display device. FIG. 14 illustrates an example of a structure of a display device. Timing chart. Timing chart. Timing chart. Timing chart. Timing chart. FIG. 14 illustrates an example of a structure of a display device. FIG. 14 illustrates an example of a structure of a display device. Timing chart. FIG. 14 illustrates an example of a structure of a display device. FIG. 14 illustrates an example of a structure of a display device. FIG. 6 illustrates an example of a transistor. FIG. 6 illustrates an example of a transistor. FIG. 13 shows characteristics of a transistor. FIG. 14 illustrates an example of a structure of a display device. FIG. 14 illustrates an example of a structure of a display device.

Hereinafter, embodiments will be described in detail with reference to the drawings. However, the following embodiments can be implemented in many different modes, and it is easy for those skilled in the art to change the modes and details in various ways without departing from the spirit and scope thereof. Understood. Therefore, the present invention is not construed as being limited to the description of the embodiments below. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
In this embodiment, an example of a display device and a driving method thereof will be described.

  FIG. 1 is an example of a display device.

The display device includes a plurality of display panels 1001 and a support unit 100 for the plurality of display panels 1001.
2. The display panel 1001 has a display screen 1003 on one side or both sides. The support portion 1002 supports the other end of the display panel 1001 so that the other end of the display panel 1001 can be rotated with one end of the display panel 1001 as a free end. That is, the display device can be viewed by turning a page (display panel 1001) like a paper book with the support portion 1002 as a fulcrum. Also,
There may be one display panel 1001. Note that the display panel 1001 may have flexibility. In that case, it can be used with a feeling similar to paper.

FIG. 2 shows an example of a display panel of a certain page. The display panel includes a pixel portion 100, a signal line driver circuit 200, a scanning line driver circuit 300, a controller 400, and a controller 500.

The pixel unit 100 includes a plurality of pixels 101. Each of the plurality of pixels 101 includes a wiring S (1
) To S (x) (x is a natural number), any one of the wirings G (1) to G (y) (y is a natural number), the wiring 111, and the wiring 112. Note that in this specification, connection means electrical connection and corresponds to a state where current, voltage, or a potential can be supplied or transmitted.

The signal line driver circuit 200 has a function of controlling the timing of outputting video signals to the wirings S (1) to S (x). A video signal is written to each pixel 101. The video signal controls the gradation and state of each pixel 101.

The scan line driver circuit 300 has a function of controlling timing of outputting gate signals to the wirings G (1) to G (y). Thus, any one of the wirings G (1) to G (y) is selected. A video signal can be written to the pixel 101 belonging to the selected row.

The controller 400 controls the timing at which the signal line driver circuit 200 and the scanning line driver circuit 300 operate. For this purpose, the controller 400 outputs a voltage, a control signal, and the like to the signal line driver circuit 200 and the scanning line driver circuit 300.

  The controller 500 controls the potentials of the wiring 111 and the wiring 112.

The controller 400 and the controller 500 can be shared by each display panel. Further, the display device can be miniaturized by mounting the controller 400 and the controller 500 in the support portion 1002 of FIG.

The display device in this embodiment has a function of outputting a video signal when the display panel is rotated to drive the pixel, and stopping the pixel drive when the display panel is not rotated. ing. That is, before and after turning the display panel, the pixels are driven when they are turned, and after the pages are turned, the driving of the pixels is stopped. Thus, by shortening the pixel driving time, the power consumption of the display device can be reduced. A specific example of the display panel driving method will be described below.

FIG. 3 is an example of a timing chart of the display panel. The timing chart has a period Ta and a period Tb.

A period Ta is a period when a page is turned, and a video signal is written to the pixel 101. Then, the gradation of the pixel 101 is controlled. Therefore, it is also called a writing period.

The period Tb is a period before and after turning the page, and the gradation of the pixel 101 is maintained. Therefore, it is also called a retention period.

  Next, operation of the display panel in the period Ta is described.

FIG. 4 is an example of a timing chart of the period Ta. The scanning line driving circuit 300 receives a start pulse GSP, a clock signal GCK, and a clock signal GC from the controller 400.
KB or the like is input.

When the start pulse GSP becomes H level, the output signal GOUT of the scanning line driving circuit 300
(1) to GOUT (y) sequentially become H level. Thus, the scanning line driving circuit 300 is
The wirings G (1) to G (y) are selected in order. Then, the pixel 10 connected to the selected wiring
1, video signals are input from the signal line driver circuit 200 through the wirings S (1) to S (x), respectively.

As described above, a video signal is input to each of the plurality of pixels 101 in the period Ta,
The gradation is controlled.

  Next, operation of the display panel in the period Tb is described.

FIG. 5 is an example of a timing chart of the period Tb. In the period Tb, since a video signal is not written to the pixel 101, driving of the pixel 101 can be stopped. That is, it is not necessary to select the wirings G (1) to G (y) connected to the pixel 101.

As a means for deselecting the wirings G (1) to G (y), for example, the scanning line driving circuit 300 is used.
To output a signal or to output an L level signal.
In FIG. 5, the wirings G (1) to G (y) are set by setting the start pulse GSP to the L level.
) Is not selected, and the pixel driving is stopped. In this manner, power consumption can be reduced by shortening the pixel driving time.

FIG. 6 is another example of a timing chart of the period Tb. In FIG. 6, not only the start pulse GSP but also the clock signal GCK and the clock signal GCKB are set to the L level to stop driving the pixels. The power consumption is further reduced as compared with the driving method of FIG.

Note that in FIG. 6, the voltage supplied to the scan line driver circuit 300 can also be set to the same value as the L level. In this way, the bias voltage of the transistor can be made almost zero, so that deterioration of the transistor can be suppressed.

FIG. 7 is another example of a timing chart of the period Tb. In the timing chart shown in FIG. 7, the operation of the controller 400 is stopped. Therefore, start pulse GSP
The clock signal GCK and the clock signal GCKB are not output, and the pixel driving is stopped.
The power consumption is further reduced as compared with the driving method of FIG.

FIG. 8 shows an example of the configuration of the controller 400. The controller 400 includes a power supply circuit 8
01, a timing generator 802, a switch element 803, and a switch element 804. The controller 400 controls output from the power supply circuit 801 and the timing generator 802 to the scanning line driving circuit 300. For example, in the period Ta, the switch element 803
Is turned on and the switch element 804 is turned off, thereby controlling the timing of outputting the H level signal (V _H ) or the L level signal (V _L ) from the power supply circuit 801. In the period Tb, the switch element 803 is turned off and the switch element 804 is turned on, whereby an L-level signal (V _L ) is output from the power supply circuit 801.

FIG. 9 illustrates an example of the configuration of the wirings G (1) to G (y) and the scanning line driver circuit 300. A switch element 901 is provided between the wirings G (1) to G (y) and the scan line driver circuit. The switch element 901 controls output of signals from the scanning line driver circuit 300 to the wirings G (1) to G (y). For example, in the period Ta, the switch element 901 is turned on. Period Tb
Then, the switch element 901 is turned off.

With the configuration shown in FIG. 8 or FIG. 9, the driving of the pixel can be controlled. However, the present invention is not limited to these, and various configurations can be applied.

Note that the pixel driving method described above can be used not only before and after turning the display panel but also for other uses. For example, the display device has a function of processing an image displayed on the display panel, and before and after the processing, the pixel is driven when the processing is performed, and the pixel driving is stopped after the processing is performed. May be. Examples of processing include enlargement, reduction, or deformation of an image. Power consumption can be reduced by controlling the driving of the pixels.

  This embodiment can be implemented in appropriate combination with any of the other embodiments.

(Embodiment 2)
In this embodiment, an example of a method for driving a display panel is described.

  FIG. 10 is an example of a timing chart of the display panel.

Similarly to FIG. 3, the period Ta is a period when the page is turned, and the period Tb is a period before and after turning the page.

The difference from FIG. 3 is that the period Ta has a plurality of periods of periods Ta (1) to Ta (n) (n is a natural number). Then, a video signal is written to the pixel 101 in each of the periods Ta (1) to Ta (n).

In each of the periods Ta (1) to Ta (n) in FIG. 10, the pixel 1 is the same as in the period Ta in FIG.
A video signal is input to 01. That is, in the period Ta, the video signal is input to the pixel 101 n times. With n inputs, pixel initialization, gradation control, and the like are performed.

Note that it is preferable to perform control so that the display element in the pixel 101 is in an electric field-free state in the last period Ta (n) among the plurality of periods Ta (1) to Ta (n). By doing so, it becomes easier to maintain the gradation in the period Tb. As a means for making no electric field, the wiring 11
For example, a video signal having a value approximately equal to a potential of 1 (also referred to as a common potential Vcom) is written.

  This embodiment can be implemented in appropriate combination with any of the other embodiments.

(Embodiment 3)
In this embodiment, an example of a specific structure and driving method of a pixel of a display panel is described.

FIG. 11 shows an example of the pixel 101 belonging to the i (i is any one of 1 to y) row and j (j is any one of 1 to x) columns. A pixel shown in FIG. 11 includes a transistor 102 and a display element 1.
03 and the capacitor 104. The transistor 102 functions as a switch element that controls supply of a video signal to the display element 103.

One of a source and a drain of the transistor 102 is connected to the wiring S (j). The other of the source and the drain of the transistor 102 is connected to one electrode of the capacitor 104 and one electrode 5001 (also referred to as a pixel electrode) of the display element 103. Transistor 102
Are connected to the wiring G (i). The other electrode of the capacitor 104 is connected to the wiring 112. The other electrode 5002 of the display element 103 (a common electrode, a common electrode, a counter electrode,
(Also referred to as a cathode electrode) is connected to the wiring 111.

The pixel 101 preferably has a memory property. Therefore, the display element 103 preferably has memory properties. As a driving method of the display element 103, a microcapsule type electrophoresis method, a microcup type electrophoresis method, a horizontal movement type electrophoresis method, a vertical movement type electrophoresis method, a twist ball method, a powder movement method, and an electronic powder fluid method A cholesteric liquid crystal element, a chiral nematic liquid crystal, an antiferroelectric liquid crystal, a polymer dispersed liquid crystal, a charged toner, an electrowetting method, an electrochromism method, or an electrodeposition method. Examples of these will be described below.

Various modes can be applied to the transistor 102. For example, it can be formed using silicon, an oxide semiconductor, or the like. In particular, a display element having a memory property is preferably formed using amorphous silicon or an oxide semiconductor because the driving voltage is large.

FIG. 12 is a cross-sectional view of a pixel when a microcapsule electrophoresis method is used as the display element 103.

A plurality of microcapsules 5003 are arranged between the electrode 5001 and the electrode 5002. The plurality of microcapsules 5003 are fixed by a resin 5004. Resin 5
004 has a function as a binder.

The resin 5004 may have a light-transmitting property. Instead of the resin 5004, a gas such as air or an inert gas may be filled. In that case, a microcapsule 5003 may be fixed by forming a layer including an adhesive or an adhesive on one or both of the electrode 5001 and the electrode 5002.

The microcapsule 5003 includes a film 5011, a liquid 5012, particles 5013, and particles 5014. The liquid 5012, the particle 5013, and the particle 5014 are formed of a film 5011.
It is enclosed in. The film 5011 has a light-transmitting property.

The liquid 5012 has a function as a dispersion. With the liquid 5012, the particles 5013 and 5014 can be dispersed in the film 5011. Note that the liquid 5012 may have a light-transmitting property and be uncolored.

The particles 5013 and 5014 have different colors. For example, one may be black and the other white. Note that the particle 5013 and the particle 5014 are charged so that their charge densities are different from each other. For example, one may be positively charged and the other negatively charged. Accordingly, when a potential difference is generated between the electrode 5001 and the electrode 5002, the particle 5013 and the particle 5014 move according to the electric field direction. Thus, the gradation can be controlled by changing the reflectance of the display element 103.

Note that the structure of the microcapsule 5003 is not limited to the above. For example, liquid 501
2 may be colored. The color of the particles is not only white and black, but also red, green,
It is possible to select from among blue, cyan, magenta, yellow emerald green and vermilion. Further, the type of particle color may be one type or three or more types.

Next, the operation of the pixel of this embodiment will be described. The following can also be applied to display elements other than the microcapsule electrophoresis system.

The gray level of the display element 103 indicates the voltage applied to the display element 103 (the electrode 5001 and the electrode 50).
(Potential difference with 02). The potential of the electrode 5001 is controlled by a video signal supplied from the wiring S (j). Note that the video signal is supplied to the electrode 5001 from the wiring S (j) when the transistor 102 is on. The potential of the electrode 5002 is
It is controlled by the voltage supplied from the wiring 111.

Note that by driving so that no potential difference is generated between the electrode 5001 and the electrode 5002, no electric field is generated between the two electrodes, and the gray level of the display element 103 can be maintained.

In FIG. 11, in the case where the driving method in FIG. 3 (or FIG. 10) is used, the transistor 102 is turned on in order to set the wiring G (i) to the H level in the period Ta (when the page is turned). Accordingly, a video signal is supplied from the wiring S (j) to the electrode 5001 through the transistor 102. At that time, the capacitor 104 holds a potential difference between the electrode 5001 and the electrode 5002.

In the period Tb (before and after turning the page), the transistor G 102 is turned off because the wiring G (i) is not selected (the driving of the pixel 101 is stopped). Thereby, the electrode 5
001 is in a floating state. At that time, the capacitor 104 holds a potential difference between the electrode 5001 and the electrode 5002 in the period Ta. Therefore, a voltage based on a video signal is applied to the display element 103 even when the transistor is off. Therefore, the display element 103
Are maintained.

As described above, power consumption can be reduced by shortening the drive time of the pixel 101.

  This embodiment can be implemented in appropriate combination with any of the other embodiments.

(Embodiment 4)
In this embodiment, an example in which the transistor 102 in FIG. 11 is formed using an oxide semiconductor is described.

By using an oxide semiconductor for the transistor 102, leakage current (off-state current) in the off state of the transistor 102 can be reduced.

By reducing the off-state current of the transistor 102, the charge of the electrode 5001 of the display element 103 can be prevented from leaking from the transistor 102 in the period Tb. That is,
The function of maintaining the gradation of the display element can be enhanced. Therefore, combined with the effect of using the display element having the memory property, the display quality of the pixel can be improved.

In addition, by reducing the off-state current of the transistor 102, gradation can be maintained even when a display element having no memory property is used. In other words, the pixel has memory characteristics by using a transistor with reduced off-state current. As a display element having no memory property, a nematic liquid crystal, a smectic liquid crystal, or the like can be given.

Specific examples of the structure and manufacturing method of a transistor including an oxide semiconductor are described below.

FIG. 13 is a cross-sectional view of a transistor. The transistor 2000 is a bottom-gate inverted staggered thin film transistor formed over an insulator 2001, and includes a gate electrode 20.
02, a gate insulating film 2003, a semiconductor film 2004, an electrode 2005, and an electrode 2006. In addition, an insulating film 2007 is provided over the transistor 2000. Electrode 2005 and electrode 20
One of 06 is a source electrode and the other is a drain electrode.

First, as a factor for increasing the off-state current of the transistor 2000, an oxide semiconductor used for the semiconductor film 2004 includes impurities such as hydrogen (eg, hydrogen, water, or a hydroxyl group). Hydrogen or the like can be a carrier donor in the oxide semiconductor, and causes current to be generated even in an off state. In other words, when an oxide semiconductor contains a large amount of hydrogen or the like, the oxide semiconductor is N-type.

In view of the above, the manufacturing method described below is to purify an oxide semiconductor by reducing hydrogen or the like in the oxide semiconductor as much as possible and increasing the concentration of oxygen which is a constituent element. A highly purified oxide semiconductor is an intrinsic or substantially intrinsic semiconductor and can reduce off-state current.

  An oxide semiconductor film is formed over the gate insulating film 2003 by a sputtering method.

As a target for the oxide semiconductor film, a metal oxide target containing zinc oxide as a main component can be used. For example, as the composition ratio, In ₂ O ₃ : Ga ₂ O ₃ : ZnO = 1
A target of 1: 1: 1, that is, In: Ga: Zn = 1: 1: 0.5 can be used. Alternatively, a target having a composition ratio of In: Ga: Zn = 1: 1: 1 or In: Ga: Zn = 1: 1: 2 can be used. Also, SiO ₂ is 2 wt% or more and 10 wt%
Targets including the following can also be used.

Note that the oxide semiconductor film may be formed in a rare gas (typically argon) atmosphere, an oxygen atmosphere, or a rare gas and oxygen mixed atmosphere. Here, the sputtering gas used for forming the oxide semiconductor film has a concentration of impurities such as hydrogen of ppm level, preferably p.
A high purity gas removed to the pb level is used.

The oxide semiconductor film is formed by introducing a sputtering gas from which hydrogen and moisture are removed while moisture remaining in the treatment chamber is removed. In order to remove moisture remaining in the treatment chamber, an adsorption-type vacuum pump is preferably used. For example, it is preferable to use a cryopump, an ion pump, or a titanium sublimation pump.

The thickness of the oxide semiconductor film may be 2 nm to 200 nm, preferably 5 nm.
More than 30 nm. Then, etching or the like is performed on the oxide semiconductor film, and the semiconductor film 2004 is formed into a desired shape (patterning).

Although an example in which In—Ga—Zn—O is used as the oxide semiconductor film is described above, other examples include In—Sn—Ga—Zn—O, In—Sn—Zn—O, and In—Al—Zn. -O, S
n-Ga-Zn-O, Al-Ga-Zn-O, Sn-Al-Zn-O, In-Zn-O,
Sn-Zn-O, Al-Zn-O, Zn-Mg-O, Sn-Mg-O, In-Mg-O,
In-O, Sn-O, Zn-O, or the like can be used. The oxide semiconductor film may contain Si. In addition, these oxide semiconductor films may be amorphous or crystalline. Alternatively, it may be a non-single crystal or a single crystal.

Alternatively, a thin film represented by InMO ₃ (ZnO) _m (m> 0) can be used as the oxide semiconductor film. Here, M is one or more metal elements selected from Ga, Al, Mn, and Co. For example, M includes Ga, Ga and Al, Ga and Mn, or Ga and Co.

Next, first heat treatment is performed on the oxide semiconductor film (semiconductor film 2004). The temperature of the first heat treatment is 400 ° C. or higher and 750 ° C. or lower, preferably 400 ° C. or higher and lower than the strain point of the substrate.

By the first heat treatment, impurities such as hydrogen can be removed (dehydrogenation treatment) from the oxide semiconductor film (semiconductor film 2004). When these elements are contained in the oxide semiconductor film, it becomes a donor and increases the off-state current of the transistor, so that the dehydrogenation treatment by the first heat treatment is extremely effective.

Note that an electric furnace can be used for the first heat treatment. Further, heating may be performed by heat conduction or heat radiation from a heating element such as a resistance heating element. In that case, for example, GRTA (Ga
s Rapid Thermal Anneal) device, LRTA (Lamp Rapid)
d Thermal Anneal) RTA (Rapid Thermal A)
nnea) apparatus can be used.

The LRTA apparatus is an apparatus that heats an object to be processed by radiation of light (electromagnetic waves) emitted from a lamp such as a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, or a high pressure mercury lamp.

The GRTA apparatus is an apparatus that performs heat treatment using a high-temperature gas. As the gas, an inert gas (typically a rare gas such as argon) or nitrogen gas can be used. GR
Use of the TA device is particularly effective because high-temperature heat treatment can be performed in a short time.

The first heat treatment may be performed before patterning the oxide semiconductor film,
This may be performed after the electrode 2005 and the electrode 2006 are formed, or may be performed after the insulating film 2007 is formed. However, in order to avoid the electrode 2005 and the electrode 2006 from being damaged by the first heat treatment, it is preferable to perform the steps before forming these electrodes.

Here, in the first heat treatment, oxygen vacancies may be generated in the oxide semiconductor. Therefore, after the first heat treatment, it is preferable to introduce oxygen (oxidation treatment) into the oxide semiconductor so that oxygen which is a constituent element is highly purified.

As a specific example of the oxidation treatment, the second heat treatment is performed in an atmosphere containing nitrogen or oxygen (for example, a volume ratio of nitrogen: oxygen = 4: 1) or in an oxygen atmosphere continuously after the first heat treatment. The method of performing the heat processing of these is mentioned. Alternatively, a method of performing plasma treatment in an oxygen atmosphere can be used. Accordingly, the oxygen concentration in the oxide semiconductor film can be improved and the oxide semiconductor film can be highly purified. The temperature of the second heat treatment is 200 ° C to 400 ° C, preferably 250 ° C to 350 ° C.

As another example of the oxidation treatment, an oxide insulating film (insulating film 2007) such as a silicon oxide film is formed in contact with the semiconductor film 2004, and third heat treatment is performed. Oxygen in the insulating film 2007 moves to the semiconductor film 2004, so that the oxygen concentration of the oxide semiconductor can be improved and the oxide film can be highly purified. The temperature of the third heat treatment is 200 ° C to 400 ° C, preferably 250 ° C to 350 ° C. Even in the case of the top gate type, the semiconductor film 2004 is used.
By forming the gate insulating film in contact with the top with a silicon oxide film or the like and performing the same heat treatment, the oxide semiconductor can be highly purified.

As described above, after the dehydrogenation treatment is performed by the first heat treatment, the oxide semiconductor film is highly purified by performing the oxidation treatment by the second heat treatment or the third heat treatment. Is possible. By being highly purified, an oxide semiconductor can be intrinsic or substantially intrinsic,
The off-state current of the transistor 2000 can be reduced.

Note that the insulator 2001 may be an insulating substrate, and a silicon oxide film,
A film formed of a single layer or a stacked layer using a silicon nitride film or the like may be used. What is necessary is just to form using plasma CVD method and sputtering method. A film formed by coating a resin film such as polyimide may be used. By forming the substrate with a resin, a flexible display panel can be obtained.

The gate electrode 2002 is formed using a single layer of a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, or scandium, or an alloy material containing any of these as a main component over the insulator 2001. Or it forms by lamination. What is necessary is just to form using sputtering method or a vacuum evaporation method.

The gate insulating film 2003 is formed as a single layer or a stacked layer using a silicon oxide film, a silicon nitride film, or the like. What is necessary is just to form using plasma CVD or sputtering method.

The electrode 2005 and the electrode 2006 include a gate insulating film 2003 and a semiconductor film 2004.
A single layer is formed using a metal such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, or yttrium, an alloy material containing these as a main component, or a conductive metal oxide such as indium oxide. Or it forms by lamination. What is necessary is just to form using sputtering method or a vacuum evaporation method. The electrode 2005 and the electrode 2006 are preferably formed so as to overlap with the gate electrode 2002. Thus, the current driving capability of the transistor 102 can be improved. In particular, this is effective when a highly purified oxide semiconductor (an intrinsic or substantially intrinsic oxide semiconductor) is used.

Hereinafter, a highly purified oxide semiconductor and a transistor including the oxide semiconductor will be described in detail.

As an example of a highly purified oxide semiconductor, a carrier concentration is less than 1 × 10 ¹⁴ / cm ³ , preferably less than 1 × 10 ¹² / cm ³ , more preferably less than 1 × 10 ¹¹ / cm ³ , or 6 An oxide semiconductor that is less than 0.0 × 10 ¹⁰ / cm ³ can be given.

A transistor including a highly purified oxide semiconductor has a feature that off-state current is extremely small as compared to a transistor including a semiconductor including silicon.

Results of measuring the off-state current characteristics of the transistor using an evaluation element (also referred to as TEG) are shown below. Note that description is made here on the assumption that the transistor is an n-channel transistor.

A transistor with L / W = 3 μm / 50 μm (film thickness d: 30 nm) is 200 for the TEG.
Transistors of L / W = 3 μm / 10000 μm manufactured in parallel were provided.
The initial characteristics are shown in FIG. Here, VG is shown in a range from −20V to + 5V. In order to measure the initial characteristics of the transistor, the substrate temperature is set to room temperature, the source-drain voltage (hereinafter referred to as drain voltage or VD) is set to 10 V, and the source-gate voltage (hereinafter referred to as gate voltage or VG) is set to -20 V. Source when changing up to + 20V
Change characteristics of drain current (hereinafter referred to as drain current or ID), that is, VG-ID
Characteristics were measured.

As shown in FIG. 15, a transistor having a channel width W of 10,000 μm has an off-current of 1 × 10 ⁻¹³ A or less regardless of whether VD is 1V or 10V.
The resolution (100 fA) or less of the semiconductor parameter analyzer, Agilent 4156C (manufactured by Agilent). This off-current value corresponds to 10 aA / μm when converted to a channel width of 1 μm, and can be regarded as substantially zero when applied to a pixel.

Note that in this specification, off-state current refers to a threshold voltage Vth in an n-channel transistor.
Is positive, it means a current that flows between the source and drain of a transistor when an arbitrary gate voltage in the range of −20 V to −5 V is applied at room temperature. In addition, room temperature shall be 15 to 25 degree | times. The transistor including an oxide semiconductor disclosed in this specification has a current value per unit channel width (W) of 100 aA / μm or less, preferably 1 aA / μm or less, more preferably 10 zA / μm or less at room temperature. .

In the pixel 101 in FIG. 11, the function of maintaining the gray level of the display element 103 is increased by reducing the off-state current of the transistor 102; thus, the capacitor 104 can be omitted. By not providing the capacitor 104, the aperture ratio of the pixel 101 can be improved.

A transistor including a highly purified oxide semiconductor has favorable temperature characteristics. Typically, in a current-voltage characteristic of a transistor in a temperature range from −25 ° C. to 150 ° C., there is almost no variation in on-state current, off-state current, field-effect mobility, S value, and threshold voltage. There is almost no degradation of the current-voltage characteristics. In addition, since a highly purified oxide semiconductor is less deteriorated by light irradiation, in a device that uses light like a display device,
In particular, reliability can be improved.

Note that although an example in which the transistor is a bottom-gate transistor is described in this embodiment, FIG.
Thus, a top gate transistor 3000 may be used. The transistor 3000 includes a semiconductor film 3004, an electrode 3005, an electrode 3006, a gate insulating film 3003, and a gate electrode 3002. One of the electrode 3005 and the electrode 3006 is a source electrode, and the other is a drain electrode.

  This embodiment can be implemented in appropriate combination with any of the other embodiments.

(Embodiment 5)
In this embodiment, an example of a configuration for detecting that the display panel is turned is shown.

In the display device in FIG. 16, a sensor is provided on the display panel 1001, the support portion 1002, or the housing 1004. By providing the sensor, it is possible to automatically detect that the display panel is turned.

For example, a structure in which the display panel 1001 is provided with the photosensor 1010 can be given. The photosensor 1010 can detect light that is incident when the display panel 1001 is turned, and can detect that the display panel 1001 has been turned.

Further, a pressure sensor 1011 may be provided on the support portion 1002. The pressure sensor 1011 can detect the pressure generated when the display panel 1001 is turned, and can detect that the display panel 1001 has been turned.

FIG. 17 is a cross-sectional view of the display device of FIG. 16 as viewed from above. Here, the display panel 1001 has a magnetic sensor 1012, and the housing 1004 has a magnet 1013. The magnetic sensor 1012 includes a magnet 10 when the display panel 1001 is turned in the direction of the arrow.
The change of the magnetic energy generated from 13 can be detected to detect turning. The positions of the magnetic sensor 1012 and the magnet 1013 may be reversed. When a plurality of display panels are provided, a change in magnetic energy when the display panel is turned can be detected by providing the display panel with the magnetic sensor 1012 or the magnet 1013.

In FIG. 17, two electrodes may be provided instead of the magnetic sensor 1012 and the magnet 1013. By detecting the current generated by the contact between the two electrodes, it is possible to detect that it has been turned. Moreover, you may detect the change of the electrostatic energy which arises by the approach of two electrodes.

In addition to the above, a sensor (acceleration sensor) for detecting the acceleration when turned, a sensor (angle sensor) for detecting the turned angle, and the like may be provided. Detection signals from these sensors are output to the controller 400 (see FIG. 2). The scanning line driving circuit 300 drives the pixel when the detection signal is output from the sensor, and stops the operation of the pixel when the detection signal is not output. By shortening the pixel driving time, the power consumption of the display device can be reduced.

  This embodiment can be implemented in appropriate combination with any of the other embodiments.

100 pixel portion 101 pixel 102 transistor 103 display element 104 capacitor element 111 wiring 112 wiring 200 signal line driving circuit 300 scanning line driving circuit 400 controller 500 controller 801 power supply circuit 802 timing generator 803 switching element 804 switching element 901 switching element 1001 display panel 1002 Support portion 1003 Display screen 1004 Case 1010 Photo sensor 1011 Pressure sensor 1012 Magnetic sensor 1013 Magnet 2000 Transistor 2001 Insulator 2002 Gate electrode 2003 Gate insulating film 2004 Semiconductor film 2005 Electrode 2006 Electrode 2007 Insulating film 3000 Transistor 3002 Gate electrode 3003 Gate insulating film 3004 Semiconductor film 3005 Electrode 3006 Electrode 5001 Electrode 5002 Electrode 50 03 Microcapsule 5004 Resin 5011 Film 5012 Liquid 5013 Particle 5014 Particle

Claims (3)

A method for manufacturing a display device having an electrophoretic element,
The transistor electrically connected to the electrophoretic element includes a step of performing a dehydrogenation process on the oxide semiconductor layer, and a step of supplying oxygen to the oxide semiconductor layer after the dehydrogenation process. A method for manufacturing a display device, wherein the display device is formed through the steps described above. A method for manufacturing a display device having an electrophoretic element,
The transistor electrically connected to the electrophoretic element includes a step of performing a dehydrogenation process on the oxide semiconductor layer, and an insulating layer containing oxygen above the oxide semiconductor layer after the dehydrogenation process And a step of performing a heat treatment in a state in which the insulating layer is in contact with the oxide semiconductor layer. A method for manufacturing a display device having an electrophoretic element,
The transistor electrically connected to the electrophoretic element includes a step of performing a first heat treatment on the oxide semiconductor layer, and a source electrode and a drain above the oxide semiconductor layer after the first heat treatment. Forming an electrode; forming an insulating layer containing oxygen above the oxide semiconductor layer, above the source electrode, and above the drain electrode; and in a state where the insulating layer is in contact with the oxide semiconductor layer. A method for manufacturing a display device, wherein the display device is formed through the heat treatment step 2.

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