JP2017161505A - Magnetic sensor and magnetic sensor device - Google Patents

Magnetic sensor and magnetic sensor device Download PDF

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JP2017161505A
JP2017161505A JP2017006526A JP2017006526A JP2017161505A JP 2017161505 A JP2017161505 A JP 2017161505A JP 2017006526 A JP2017006526 A JP 2017006526A JP 2017006526 A JP2017006526 A JP 2017006526A JP 2017161505 A JP2017161505 A JP 2017161505A
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magnetic sensor
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output
resistor
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JP6797035B2 (en
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健太郎 深井
Kentaro Fukai
健太郎 深井
稔 有山
Minoru Ariyama
稔 有山
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Ablic Inc
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
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Abstract

PROBLEM TO BE SOLVED: To provide a magnetic sensor and a magnetic sensor device which can accurately determine such abnormalities as disconnection or short-circuit of wirings of the magnetic sensor device.SOLUTION: The output control circuit of the magnetic sensor includes: a partial pressure circuit connected to an output terminal; and an amplifier for controlling the gate voltage of a MOS transistor connected to the output terminal of the magnetic sensor so that the voltage of the partial pressure circuit and the voltage of the reference voltage become equal. With the configuration, the output voltage of the magnetic sensor is determined by the ratio of the reference voltage and the partial pressure of the partial pressure circuit.SELECTED DRAWING: Figure 1

Description

本発明は、磁気センサに関し、より詳しくは出力端子を外部でプルアップする構成の磁気センサ及び磁気センサ装置に関する。   The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor and a magnetic sensor device configured to pull up an output terminal externally.

磁気センサ装置は、磁束密度を電気信号に変換する磁気検出素子を備え、磁性体が設けられた被検出部材との相対距離の変化に応じて変化する磁束密度が予め設定された磁束密度閾値との大小を電気的に判定し、2レベルの電圧の検出信号を出力する。磁気センサを用いるスイッチングシステム、特に自動車の分野においては、自動車の利用者に安全を提供するため、機能安全(ISO26262)の観点からシステムを構築することが要求される。例えば、磁気センサ素子自体の故障や、システム内の信号伝達経路の故障により、誤ったスイッチング動作が行われてしまう懸念を払拭させることが要求される。   The magnetic sensor device includes a magnetic detection element that converts the magnetic flux density into an electric signal, and a magnetic flux density that changes according to a change in a relative distance from a detected member provided with a magnetic body is a preset magnetic flux density threshold value. Is electrically determined, and a detection signal of a two-level voltage is output. In the field of switching systems using magnetic sensors, particularly in the field of automobiles, it is required to construct a system from the viewpoint of functional safety (ISO 26262) in order to provide safety to automobile users. For example, it is required to eliminate the concern that an erroneous switching operation is performed due to a failure of the magnetic sensor element itself or a signal transmission path in the system.

図4は、従来の磁気センサ装置である。磁気センサ50は、磁気センサを含む信号処理回路51と、トランジスタ52と、定電流回路53と、抵抗54で構成される。判別回路59は、磁気センサ50とGNDが共通に接続され、端子INが磁気センサ50の端子OUTと接続されている。更に、磁気センサ50の端子INは、プルアップ抵抗58によって電圧VDDにプルアップされている。   FIG. 4 shows a conventional magnetic sensor device. The magnetic sensor 50 includes a signal processing circuit 51 including a magnetic sensor, a transistor 52, a constant current circuit 53, and a resistor 54. In the determination circuit 59, the magnetic sensor 50 and GND are connected in common, and the terminal IN is connected to the terminal OUT of the magnetic sensor 50. Further, the terminal IN of the magnetic sensor 50 is pulled up to the voltage VDD by the pull-up resistor 58.

磁気センサ50は、電圧VDDより所定値だけ低い高レベル値と電圧GNDより所定値だけ高い低レベル値の2値を端子OUTに出力する。判別回路59は、入力電圧レベルがそれら2値の近傍以外の電圧である場合に異常と判定する異常検出機能を有する。   The magnetic sensor 50 outputs two values, a high level value lower than the voltage VDD by a predetermined value and a low level value higher than the voltage GND by a predetermined value to the terminal OUT. The determination circuit 59 has an abnormality detection function for determining an abnormality when the input voltage level is a voltage other than the vicinity of these binary values.

このように電圧VDDや電圧GNDと等価でない所定の電圧レベルを正常と判断するよう構成することで、入力端子の断線など異常を容易に検出する事が出来る。例えば、磁気センサ50の端子OUTと判別回路59の端子INの間の配線が断線しオープンになった場合は、判別回路59の入力レベルが電圧VDDとなるため異常と判定される。また、磁気センサ50の端子OUTと判別回路59の端子INの間の配線が電圧GNDに短絡した場合は、判別回路59の入力レベルが電圧GNDとなるため異常と判定される。   In this way, by configuring the predetermined voltage level that is not equivalent to the voltage VDD or the voltage GND as normal, it is possible to easily detect abnormality such as disconnection of the input terminal. For example, when the wiring between the terminal OUT of the magnetic sensor 50 and the terminal IN of the determination circuit 59 is disconnected and opened, it is determined that the input level of the determination circuit 59 is the voltage VDD, which is abnormal. When the wiring between the terminal OUT of the magnetic sensor 50 and the terminal IN of the determination circuit 59 is short-circuited to the voltage GND, the input level of the determination circuit 59 becomes the voltage GND, so that it is determined as abnormal.

特開2001−165944号公報JP 2001-165944 A

上述の回路構成の場合、正常時の判別回路59の入力電圧レベルは、抵抗54と定電流回路53とトランジスタ52及びプルアップ抵抗58により決まる。従って、プルアップ抵抗58は、製造ばらつきにより抵抗値がばらつくため、入力電圧レベルが変動してしまい、判別回路59が誤判定をしてしまうという課題がある。   In the case of the circuit configuration described above, the input voltage level of the determination circuit 59 in a normal state is determined by the resistor 54, the constant current circuit 53, the transistor 52, and the pull-up resistor 58. Therefore, since the resistance value of the pull-up resistor 58 varies due to manufacturing variations, there is a problem that the input voltage level fluctuates and the determination circuit 59 makes an erroneous determination.

このような課題を解決するため、本発明の磁気センサは、出力制御回路を、出力端子に接続された分圧回路と、分圧回路の電圧と基準電圧が等しくなるように磁気センサの出力端子に接続されたMOSトランジスタのゲート電圧を制御するアンプを備えた。   In order to solve such problems, the magnetic sensor of the present invention includes an output control circuit, a voltage dividing circuit connected to the output terminal, and an output terminal of the magnetic sensor so that the voltage of the voltage dividing circuit is equal to the reference voltage. And an amplifier for controlling the gate voltage of the MOS transistor connected to.

本発明の磁気センサによれば、磁気センサの出力電圧は、基準電圧と分圧回路の分圧比によって決定されるので、プルアップ抵抗の抵抗値ばらつきに左右されないという効果がある。従って、判別回路は磁気センサ装置の配線の断線や短絡などの異常を正確に判定する事が出来る。   According to the magnetic sensor of the present invention, since the output voltage of the magnetic sensor is determined by the voltage dividing ratio of the reference voltage and the voltage dividing circuit, there is an effect that it is not affected by the resistance value variation of the pull-up resistor. Therefore, the determination circuit can accurately determine abnormality such as disconnection or short circuit of the wiring of the magnetic sensor device.

本発明の磁気センサの第一実施形態を示す回路図である。It is a circuit diagram showing a first embodiment of a magnetic sensor of the present invention. 本発明の磁気センサの第二実施形態を示す回路図である。It is a circuit diagram which shows 2nd embodiment of the magnetic sensor of this invention. 本発明の磁気センサの第三実施形態を示す回路図である。It is a circuit diagram which shows 3rd embodiment of the magnetic sensor of this invention. 従来の磁気センサ装置を示す回路図である。It is a circuit diagram which shows the conventional magnetic sensor apparatus.

以下、本発明の実施形態を、図面を参照して説明する。
図1は、本発明の磁気センサの第一実施形態を示す回路図である。
磁気センサ装置は、磁気センサ1と、プルアップ抵抗18と、判別回路19で構成される。
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a circuit diagram showing a first embodiment of the magnetic sensor of the present invention.
The magnetic sensor device includes a magnetic sensor 1, a pull-up resistor 18, and a determination circuit 19.

第一実施形態の磁気センサ1は、磁気センサ素子3と、磁気判定回路4と、出力制御回路10で構成される。出力制御回路10は、MOSスイッチ5と、出力ドライブ素子6と、アンプ7と、基準電圧回路8と、分圧回路である抵抗R1、R2、R3とで構成される。   The magnetic sensor 1 according to the first embodiment includes a magnetic sensor element 3, a magnetic determination circuit 4, and an output control circuit 10. The output control circuit 10 includes a MOS switch 5, an output drive element 6, an amplifier 7, a reference voltage circuit 8, and resistors R1, R2, and R3 that are voltage dividing circuits.

磁気センサ1は、出力端子OUTが判別回路19の入力端子とプルアップ抵抗18を介して外部電源端子VPUに接続される。磁気センサ素子3は、入力端子が電源端子VDD及びGNDに接続され、出力端子が磁気判定回路4の入力端子に接続される。出力ドライブ素子6は、例えばNチャネルMOSFETで構成され、ドレインは出力端子OUTに接続され、ソースは接地端子GNDに接続されている。抵抗R1は、一端が出力端子OUTに接続され、他端(ノードN1)が抵抗R2の一端に接続されている。抵抗R2は、他端(ノードN2)が抵抗R3の一端に接続されている。抵抗R3は、他端が接地端子GNDに接続されている。アンプ7は、出力端子が出力ドライブ素子6のゲートに接続され、反転入力端子は基準電圧回路8の出力端子に接続され、非反転入力端子はノードN1に接続されている。MOSスイッチ5は、例えばNチャネルMOSFETで構成され、ゲートは磁気判定回路4の出力端子に接続され、ドレインはノードN2に接続され、ソースは接地端子GNDに接続される。   The magnetic sensor 1 has an output terminal OUT connected to the external power supply terminal VPU via the input terminal of the determination circuit 19 and the pull-up resistor 18. The magnetic sensor element 3 has an input terminal connected to the power supply terminals VDD and GND, and an output terminal connected to the input terminal of the magnetism determination circuit 4. The output drive element 6 is composed of, for example, an N-channel MOSFET, the drain is connected to the output terminal OUT, and the source is connected to the ground terminal GND. The resistor R1 has one end connected to the output terminal OUT and the other end (node N1) connected to one end of the resistor R2. The other end (node N2) of the resistor R2 is connected to one end of the resistor R3. The other end of the resistor R3 is connected to the ground terminal GND. The amplifier 7 has an output terminal connected to the gate of the output drive element 6, an inverting input terminal connected to the output terminal of the reference voltage circuit 8, and a non-inverting input terminal connected to the node N1. The MOS switch 5 is composed of, for example, an N-channel MOSFET, the gate is connected to the output terminal of the magnetic decision circuit 4, the drain is connected to the node N2, and the source is connected to the ground terminal GND.

判別回路19は、磁気センサ1が出力する磁束密度に応じた高レベル値と低レベル値を区別する機能に加え、異常検出機能を有する。異常検出機能は、入力される電圧が高レベル値と低レベル値の近傍である場合に磁気センサ装置が正常であると判定し、入力される電圧がそれ以外の電圧領域である場合に磁気センサ装置が異常であると判定する、
磁気センサ素子3は、電圧VDDを電源とし、磁気センサ素子へ入力される磁束密度に応じた電気信号を出力する。磁気センサ素子3は、例えばホール素子を用いる事ができる。磁気判定回路4は、磁気センサ素子3の出力する電気信号と、予め設定された閾値信号とを比較し、磁気判定結果を電圧VDDと電圧GNDの2値電圧で出力制御回路10に出力する。
The discrimination circuit 19 has an abnormality detection function in addition to a function of distinguishing between a high level value and a low level value corresponding to the magnetic flux density output from the magnetic sensor 1. The abnormality detection function determines that the magnetic sensor device is normal when the input voltage is in the vicinity of the high level value and the low level value, and the magnetic sensor when the input voltage is in the other voltage range. Determine that the device is abnormal,
The magnetic sensor element 3 uses the voltage VDD as a power source and outputs an electrical signal corresponding to the magnetic flux density input to the magnetic sensor element. As the magnetic sensor element 3, for example, a Hall element can be used. The magnetic determination circuit 4 compares the electrical signal output from the magnetic sensor element 3 with a preset threshold signal, and outputs the magnetic determination result to the output control circuit 10 as a binary voltage of the voltage VDD and the voltage GND.

磁気判定回路4の出力が電圧GNDの場合、MOSスイッチ5はオフ状態であり、ノードN2は抵抗R3によって接地端子GNDと接続されている。
一方、磁気判定回路4の出力が電圧VDDの場合、MOSスイッチ5はオン状態であり、ノードN2は接地端子GNDと接続されている。
When the output of the magnetic decision circuit 4 is the voltage GND, the MOS switch 5 is in an off state, and the node N2 is connected to the ground terminal GND through the resistor R3.
On the other hand, when the output of the magnetic determination circuit 4 is the voltage VDD, the MOS switch 5 is in the on state, and the node N2 is connected to the ground terminal GND.

出力端子OUTと接地端子GNDの間には、分圧回路と電気的に並列に出力ドライブ素子6が接続される。出力ドライブ素子6は、NチャネルMOSFETであり、ゲート電圧を制御することで、出力端子OUTと接地端子GNDの間にドレイン電流を流すことができる。また、アンプ7は、ノードN1が非反転入力端子に接続され、基準電圧回路8が反転入力端子に接続され、出力端子が出力ドライブ素子6のゲート端子に接続されているため、ノードN1の電圧を基準電圧回路8の基準電圧に等しくなるように出力ドライブ素子6を制御する。   Between the output terminal OUT and the ground terminal GND, the output drive element 6 is connected electrically in parallel with the voltage dividing circuit. The output drive element 6 is an N-channel MOSFET, and by controlling the gate voltage, a drain current can flow between the output terminal OUT and the ground terminal GND. In the amplifier 7, the node N1 is connected to the non-inverting input terminal, the reference voltage circuit 8 is connected to the inverting input terminal, and the output terminal is connected to the gate terminal of the output drive element 6. Is controlled to be equal to the reference voltage of the reference voltage circuit 8.

磁気センサ1の出力端子OUTの出力電圧をVOUTとし、基準電圧回路8の基準電圧をVREFとすると、出力電圧VOUTは、磁気判定結果の場合分けにより2つの式で表わされる。
VOUT=(1+R1/R2)×VREF ・・・(1)
VOUT={1+R1/(R2+R3)}×VREF ・・・(2)
式1は、磁気判定回路4の出力が電圧VDDの場合の出力電圧VOUTを表わす。式2は、磁気判定回路4の出力が電圧GNDの場合の出力電圧VOUTを表わす。
Assuming that the output voltage of the output terminal OUT of the magnetic sensor 1 is VOUT and the reference voltage of the reference voltage circuit 8 is VREF, the output voltage VOUT is expressed by two equations depending on the case of the magnetic determination result.
VOUT = (1 + R1 / R2) × VREF (1)
VOUT = {1 + R1 / (R2 + R3)} × VREF (2)
Expression 1 represents the output voltage VOUT when the output of the magnetic determination circuit 4 is the voltage VDD. Expression 2 represents the output voltage VOUT when the output of the magnetic determination circuit 4 is the voltage GND.

このように、磁気センサ1の出力電圧VOUTは、プルアップ抵抗18の抵抗値に依存しないため、プルアップ抵抗18のばらつきに対して影響を受けることがない。したがってプルアップ抵抗値を柔軟に設定できるため、さらなる効果として、プルアップ抵抗値を大きくすることで磁気センサシステムの省電力化も可能となる。   Thus, since the output voltage VOUT of the magnetic sensor 1 does not depend on the resistance value of the pull-up resistor 18, it is not affected by variations in the pull-up resistor 18. Therefore, since the pull-up resistance value can be set flexibly, as a further effect, it is possible to reduce the power consumption of the magnetic sensor system by increasing the pull-up resistance value.

以下に、第一実施形態の磁気センサを実現する具体的な抵抗値の例を示す。
外部電源VPUを5.0V、基準電圧VREFを0.3Vとした場合の、式1の出力電圧VOUTが4.5V、式2の出力電圧VOUTが0.5Vとなるような回路定数を求める。式1および式2から、R1:R2:R3の比率は7:0.5:10に設定すればよいことがわかる。
Below, the example of the specific resistance value which implement | achieves the magnetic sensor of 1st embodiment is shown.
When the external power supply VPU is 5.0 V and the reference voltage VREF is 0.3 V, circuit constants are obtained such that the output voltage VOUT of Expression 1 is 4.5 V and the output voltage VOUT of Expression 2 is 0.5 V. From Equation 1 and Equation 2, it can be seen that the ratio of R1: R2: R3 may be set to 7: 0.5: 10.

さらに具体的には、プルアップ抵抗18の抵抗値を限定しないためには、抵抗R1からR3の抵抗値は大きいほど望ましい。RPUをプルアップ抵抗18の抵抗値とすると、その許容値は式3より求められる。
RPU>(VPU−VOUT(1))/{VOUT(1)/(R1+R2+R3)}・・・(3)
例えば、R1=700kΩ、R2=50kΩ、R3=1MΩとすると、プルアップ抵抗18の抵抗値RPUは、194kΩ未満であれば動作可能となる。
より現実的に出力ドライバ素子のドレイン電流許容範囲を考慮すれば、プルアップ抵抗18の抵抗値は数十Ω以上であることが望ましい。
More specifically, in order not to limit the resistance value of the pull-up resistor 18, the resistance values of the resistors R1 to R3 are preferably as large as possible. When RPU is the resistance value of the pull-up resistor 18, the allowable value is obtained from Equation 3.
RPU> (VPU−VOUT (1)) / {VOUT (1) / (R1 + R2 + R3)} (3)
For example, if R1 = 700 kΩ, R2 = 50 kΩ, and R3 = 1 MΩ, the pull-up resistor 18 can be operated if the resistance value RPU is less than 194 kΩ.
Considering the drain current allowable range of the output driver element more realistically, it is desirable that the resistance value of the pull-up resistor 18 is several tens of Ω or more.

以上説明したように、第一実施形態の磁気センサ1によれば、判別回路19の入力電圧が基準電圧と分圧回路の分圧比によって決定されるので、プルアップ抵抗18の抵抗値ばらつきに左右されずに、配線の断線や短絡などの異常を正確に判定する事が出来る。
なお、判別回路19の求める入力電圧に応じて、出力電圧VOUTを調整できるよう分圧回路の抵抗をトリミング手段可能な構成にしてもよい。
As described above, according to the magnetic sensor 1 of the first embodiment, since the input voltage of the determination circuit 19 is determined by the voltage dividing ratio of the reference voltage and the voltage dividing circuit, it depends on the resistance value variation of the pull-up resistor 18. Instead, it is possible to accurately determine an abnormality such as a disconnection or a short circuit of the wiring.
It should be noted that the resistance of the voltage dividing circuit may be trimmed so that the output voltage VOUT can be adjusted according to the input voltage required by the determination circuit 19.

図2は、本発明の磁気センサの第二実施形態を示す回路図である。
磁気センサ100は、磁気センサ素子3と、磁気判定回路4と、出力制御回路20で構成される。出力制御回路20は、出力ドライブ素子6と、アンプ7と、分圧回路である抵抗R1、R2、基準電圧回路81と、基準電圧回路82と、MOSスイッチ90ととで構成される。
FIG. 2 is a circuit diagram showing a second embodiment of the magnetic sensor of the present invention.
The magnetic sensor 100 includes a magnetic sensor element 3, a magnetic determination circuit 4, and an output control circuit 20. The output control circuit 20 includes an output drive element 6, an amplifier 7, resistors R1 and R2, which are voltage dividing circuits, a reference voltage circuit 81, a reference voltage circuit 82, and a MOS switch 90.

磁気センサ100と、判別回路19と、プルアップ抵抗18は、第一実施形態と同様に接続され、同様の動作をする。さらに、磁気センサ素子3と、磁気判定回路4と、出力ドライブ素子6と、アンプ7は、第一実施形態と同様に接続され、同様の動作をするため、説明を省略する。   The magnetic sensor 100, the determination circuit 19, and the pull-up resistor 18 are connected in the same manner as in the first embodiment and perform the same operation. Furthermore, since the magnetic sensor element 3, the magnetic determination circuit 4, the output drive element 6, and the amplifier 7 are connected in the same manner as in the first embodiment and operate in the same manner, description thereof is omitted.

MOSスイッチ90は、例えばCMOSトランジスタで構成され、基準電圧回路81あるいは基準電圧回路82を択一的に選択してアンプ7の反転入力端子に接続する。MOSスイッチ90は、制御端子を備え、制御端子には磁気判定回路4の出力する2値電圧が入力される。   The MOS switch 90 is composed of, for example, a CMOS transistor, and alternatively selects the reference voltage circuit 81 or the reference voltage circuit 82 and connects it to the inverting input terminal of the amplifier 7. The MOS switch 90 includes a control terminal, and a binary voltage output from the magnetic determination circuit 4 is input to the control terminal.

磁気判定回路4の出力が電圧GNDの場合、MOSスイッチ90は基準電圧回路81を選択し、基準電圧回路81の出力端子をアンプ7の反転入力端子に接続する。
一方、磁気判定回路4の出力が電圧VDDの場合、MOSスイッチ90は基準電圧回路82を選択し、基準電圧回路82の出力端子をアンプ7の反転入力端子に接続する。
When the output of the magnetic determination circuit 4 is the voltage GND, the MOS switch 90 selects the reference voltage circuit 81 and connects the output terminal of the reference voltage circuit 81 to the inverting input terminal of the amplifier 7.
On the other hand, when the output of the magnetic decision circuit 4 is the voltage VDD, the MOS switch 90 selects the reference voltage circuit 82 and connects the output terminal of the reference voltage circuit 82 to the inverting input terminal of the amplifier 7.

基準電圧回路81が生成する基準電圧をVREF1とし、基準電圧回路82が生成する基準電圧をVREF2とする。基準電圧VREF1と基準電圧VREF2は、互いに値が異なる基準電圧である。   The reference voltage generated by the reference voltage circuit 81 is VREF1, and the reference voltage generated by the reference voltage circuit 82 is VREF2. The reference voltage VREF1 and the reference voltage VREF2 are reference voltages having different values.

磁気センサ100の出力端子OUTの出力電圧をVOUTとすると、出力電圧VOUTは、磁気判定結果の場合分けにより2つの式で表わされる。
VOUT=(1+R1/R2)×VREF1・・・(4)
VOUT=(1+R1/R2)×VREF2・・・(5)
式4は、磁気判定回路4の出力が電圧GNDの場合の出力電圧VOUTを表わす。式5は磁気判定回路4の出力が電圧VDDの場合の出力電圧VOUTを表わす。
Assuming that the output voltage of the output terminal OUT of the magnetic sensor 100 is VOUT, the output voltage VOUT is expressed by two equations depending on the case of the magnetic determination result.
VOUT = (1 + R1 / R2) × VREF1 (4)
VOUT = (1 + R1 / R2) × VREF2 (5)
Expression 4 represents the output voltage VOUT when the output of the magnetic determination circuit 4 is the voltage GND. Equation 5 represents the output voltage VOUT when the output of the magnetic decision circuit 4 is the voltage VDD.

以下に第二実施形態の磁気センサを実現する具体的な数値例を示す。
外部電源VPUを5.0Vとし、式4の出力電圧VOUTが4.5V、式5の出力電圧VOUTが0.5Vとなるような回路定数を求める。基準電圧VREF1が3.0Vとなるように基準電圧回路81を設定する場合、式4より、R1:R2の比率は0.5:1に設定すれば良いことがわかる。また、基準電圧VREF2は、式4および式5から、0.33Vに設定すればよいことがわかる。
Specific numerical examples for realizing the magnetic sensor of the second embodiment are shown below.
The circuit constants are determined so that the external power supply VPU is 5.0 V, the output voltage VOUT of Expression 4 is 4.5 V, and the output voltage VOUT of Expression 5 is 0.5 V. When the reference voltage circuit 81 is set so that the reference voltage VREF1 is 3.0 V, it can be seen from Equation 4 that the ratio of R1: R2 should be set to 0.5: 1. Further, it can be seen from the equations 4 and 5 that the reference voltage VREF2 may be set to 0.33V.

図3は、本発明の磁気センサの第三実施形態を示す回路図である。
基準電圧回路は、第二実施形態と異なり、抵抗91と抵抗92と抵抗93で構成される。また磁気センサ200は、外部電源VPUが接続されるVDD2端子を備え、VDD2端子は抵抗93の一端とアンプ7の反転入力端子に接続される。抵抗93は、MOSスイッチ90によって抵抗91と抵抗92のいずれかに接続される。そして、それらの抵抗は、電圧VPUを抵抗分圧することで基準電圧が得られる。
FIG. 3 is a circuit diagram showing a third embodiment of the magnetic sensor of the present invention.
Unlike the second embodiment, the reference voltage circuit includes a resistor 91, a resistor 92, and a resistor 93. The magnetic sensor 200 includes a VDD2 terminal to which the external power supply VPU is connected. The VDD2 terminal is connected to one end of the resistor 93 and the inverting input terminal of the amplifier 7. The resistor 93 is connected to either the resistor 91 or the resistor 92 by the MOS switch 90. These resistors can obtain a reference voltage by dividing the voltage VPU.

磁気判定回路4の出力が電圧VDDの場合、MOSスイッチ90は抵抗91を選択して抵抗93と直列接続する。磁気判定回路4の出力が電圧GNDの場合、MOSスイッチ90は抵抗92を選択して抵抗93と直列接続する。   When the output of the magnetic determination circuit 4 is the voltage VDD, the MOS switch 90 selects the resistor 91 and connects it in series with the resistor 93. When the output of the magnetic determination circuit 4 is the voltage GND, the MOS switch 90 selects the resistor 92 and connects it in series with the resistor 93.

外部電源VPUと抵抗93と抵抗91とで生成される基準電圧をVREF1とし、外部電源VPUと抵抗93と抵抗92とで生成される基準電圧をVREF2とする。基準電圧VREF1と基準電圧VREF2は、互いに値が異なる基準電圧である。
磁気センサ200の出力端子OUTの出力電圧をVOUTとすると、出力電圧VOUTは第二実施形態の磁気センサと同様に式4と式5で表される。
A reference voltage generated by the external power source VPU, the resistor 93, and the resistor 91 is VREF1, and a reference voltage generated by the external power source VPU, the resistor 93, and the resistor 92 is VREF2. The reference voltage VREF1 and the reference voltage VREF2 are reference voltages having different values.
Assuming that the output voltage of the output terminal OUT of the magnetic sensor 200 is VOUT, the output voltage VOUT is expressed by Expression 4 and Expression 5 similarly to the magnetic sensor of the second embodiment.

以下に第三実施形態の磁気センサを実現する具体的な数値例を示す。
外部電源VPUを5.0Vとし、式4の出力電圧VOUTが4.5V、式5の出力電圧VOUTが0.5Vとなるような回路定数を求める。式4の出力電圧VOUTと式5の出力電圧VOUTの比は、9:1であるから、基準電圧VREF1と基準電圧VREF2の比も9:1となるように設定する。基準電圧VREF1が3.0V、基準電圧VREF2が0.33Vとすると、式4よりR1:R2の比率は0.5:1に設定すれば良いことがわかる。さらに、抵抗91と抵抗92と抵抗93は、抵抗91が300kΩ、抵抗92が14kΩ、抵抗93が200kΩとすることで第三実施形態を実現することができる。
Specific numerical examples for realizing the magnetic sensor of the third embodiment will be shown below.
The circuit constants are determined so that the external power supply VPU is 5.0 V, the output voltage VOUT of Expression 4 is 4.5 V, and the output voltage VOUT of Expression 5 is 0.5 V. Since the ratio between the output voltage VOUT in Expression 4 and the output voltage VOUT in Expression 5 is 9: 1, the ratio between the reference voltage VREF1 and the reference voltage VREF2 is also set to 9: 1. Assuming that the reference voltage VREF1 is 3.0V and the reference voltage VREF2 is 0.33V, it can be seen from Equation 4 that the ratio of R1: R2 should be set to 0.5: 1. Further, the resistor 91, the resistor 92, and the resistor 93 can realize the third embodiment by setting the resistor 91 to 300 kΩ, the resistor 92 to 14 kΩ, and the resistor 93 to 200 kΩ.

以上説明したように、本発明の磁気センサによれば、判別回路19の入力電圧が基準電圧と分圧回路の分圧比によって決定されるので、プルアップ抵抗18の抵抗値ばらつきに左右されずに、配線の断線や短絡などの異常を正確に判定する事が出来る。   As described above, according to the magnetic sensor of the present invention, the input voltage of the discriminating circuit 19 is determined by the voltage dividing ratio of the reference voltage and the voltage dividing circuit, so that it is not affected by the resistance value variation of the pull-up resistor 18. It is possible to accurately determine abnormalities such as wire breakage and short circuit.

1、100、200 磁気センサ
3 磁気センサ素子
4 磁気判定回路
5、90 MOSスイッチ
6 出力ドライブ素子
7 アンプ
8、81、82 基準電圧回路
19 判別回路
DESCRIPTION OF SYMBOLS 1,100,200 Magnetic sensor 3 Magnetic sensor element 4 Magnetic judgment circuit 5, 90 MOS switch 6 Output drive element 7 Amplifier 8, 81, 82 Reference voltage circuit 19 Discrimination circuit

Claims (3)

判別回路の入力端子に接続される出力端子がプルアップ抵抗で外部電源端子と接続された磁気センサであって、
前記磁気センサは、磁気センサ素子と、前記磁気センサ素子の出力電圧が入力される判定回路と、前記判定回路の信号を前記磁気センサの出力端子に出力する出力制御回路と、を備え、
前記出力制御回路は、
前記磁気センサの出力端子と接地端子の間に直列接続された第1、第2、第3の抵抗と、
ゲートが前記判定回路の出力端子に接続され、ドレインが前記第2の抵抗と前記第3の抵抗の接点に接続され、ソースが接地端子に接続された第1のMOSトランジスタと、
反転入力端子が基準電圧回路の出力端子に接続され、非反転入力端子が前記第1の抵抗と前記第2の抵抗の接点に接続されたアンプと、
ゲートが接続され前記アンプの出力端子に接続され、ドレインが前記磁気センサの出力端子に接続され、ソースは接地端子に接続された第2のMOSトランジスタと、
を備えたことを特徴とする磁気センサ。
An output terminal connected to the input terminal of the discrimination circuit is a magnetic sensor connected to an external power supply terminal with a pull-up resistor,
The magnetic sensor includes a magnetic sensor element, a determination circuit to which an output voltage of the magnetic sensor element is input, and an output control circuit that outputs a signal of the determination circuit to an output terminal of the magnetic sensor,
The output control circuit includes:
First, second, and third resistors connected in series between an output terminal and a ground terminal of the magnetic sensor;
A first MOS transistor having a gate connected to the output terminal of the determination circuit, a drain connected to a contact point of the second resistor and the third resistor, and a source connected to a ground terminal;
An amplifier having an inverting input terminal connected to an output terminal of a reference voltage circuit and a non-inverting input terminal connected to a contact point of the first resistor and the second resistor;
A second MOS transistor having a gate connected to the output terminal of the amplifier, a drain connected to the output terminal of the magnetic sensor, and a source connected to the ground terminal;
A magnetic sensor comprising:
判別回路の入力端子に接続される出力端子がプルアップ抵抗で外部電源端子と接続された磁気センサであって、
前記磁気センサは、磁気センサ素子と、前記磁気センサ素子の出力電圧が入力される判定回路と、前記判定回路の信号を前記磁気センサの出力端子に出力する出力制御回路と、を備え、
前記出力制御回路は、
前記磁気センサの出力端子と接地端子の間に直列接続された第1、第2の抵抗と、
制御端子が前記判定回路の出力端子に接続され、第一入力端子が第一基準電圧回路に接続され、第二入力端子が第二基準電圧回路に接続され、出力端子が前記アンプの反転入力端子に接続されたスイッチと、
非反転入力端子が前記第1の抵抗と前記第2の抵抗の接点に接続されたアンプと、
前記アンプの出力端子がゲートに接続され、ドレインが前記磁気センサの出力端子に接続され、ソースが接地端子に接続されたMOSトランジスタと、
を備えたことを特徴とする磁気センサ。
An output terminal connected to the input terminal of the discrimination circuit is a magnetic sensor connected to an external power supply terminal with a pull-up resistor,
The magnetic sensor includes a magnetic sensor element, a determination circuit to which an output voltage of the magnetic sensor element is input, and an output control circuit that outputs a signal of the determination circuit to an output terminal of the magnetic sensor,
The output control circuit includes:
First and second resistors connected in series between an output terminal and a ground terminal of the magnetic sensor;
The control terminal is connected to the output terminal of the determination circuit, the first input terminal is connected to the first reference voltage circuit, the second input terminal is connected to the second reference voltage circuit, and the output terminal is the inverting input terminal of the amplifier. A switch connected to
An amplifier having a non-inverting input terminal connected to a contact point of the first resistor and the second resistor;
An output terminal of the amplifier is connected to the gate, a drain is connected to the output terminal of the magnetic sensor, and a source is connected to the ground terminal; a MOS transistor;
A magnetic sensor comprising:
請求項1または2に記載の磁気センサと、
入力端子に前記磁気センサの出力端子が接続される判別回路と、
前記磁気センサの出力端子と外部電源端子の間に接続されるプルアップ抵抗と、
備えたことを特徴とする磁気センサ装置。
A magnetic sensor according to claim 1 or 2,
A discrimination circuit in which an output terminal of the magnetic sensor is connected to an input terminal;
A pull-up resistor connected between the output terminal of the magnetic sensor and an external power supply terminal;
A magnetic sensor device comprising:
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