TWI722128B - Magnetic sensor and magnetic sensor device - Google Patents
Magnetic sensor and magnetic sensor device Download PDFInfo
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Abstract
本發明提供一種磁感測器及磁感測器裝置,可準確地判定磁感測器裝置的配線的斷線或短路等異常。磁感測器的輸出控制電路具備連接於輸出端子的分壓電路與放大器,所述放大器對與磁感測器的輸出端子連接的MOS電晶體的閘極電壓進行控制,以使分壓電路的電壓與基準電壓變得相等,因此磁感測器的輸出電壓是由基準電壓與分壓電路的分壓比來決定。The present invention provides a magnetic sensor and a magnetic sensor device, which can accurately determine abnormalities such as disconnection or short circuit of the wiring of the magnetic sensor device. The output control circuit of the magnetic sensor includes a voltage divider circuit connected to the output terminal and an amplifier. The amplifier controls the gate voltage of the MOS transistor connected to the output terminal of the magnetic sensor so that the divided voltage The voltage of the circuit becomes equal to the reference voltage, so the output voltage of the magnetic sensor is determined by the voltage division ratio of the reference voltage and the voltage divider circuit.
Description
本發明是有關於一種磁感測器(sensor),更詳細而言,是有關於一種在外部上拉(pull up)輸出端子的結構的磁感測器及磁感測器裝置。The present invention relates to a magnetic sensor, and in more detail, it relates to a magnetic sensor and a magnetic sensor device with a structure in which an output terminal is externally pulled up.
磁感測器裝置具備將磁通密度轉換為電信號的磁檢測元件,對根據與設有磁性體的被檢測構件的相對距離的變化而變化的磁通密度、和預先設定的磁通密度閾值的大小進行電性判定,輸出二位準(level)的電壓的檢測信號。在使用磁感測器的開關系統(switching system)、尤其是汽車領域中,為了向汽車的利用者提供安全,要求從功能安全(ISO26262)的觀點建構系統。例如要求消除因磁感測器元件自身的故障或系統內的信號傳輸路徑的故障而進行錯誤的開關動作的疑慮。The magnetic sensor device is equipped with a magnetic detection element that converts the magnetic flux density into an electrical signal, and detects the magnetic flux density that changes according to the change in the relative distance from the detected member provided with a magnetic body, and a preset magnetic flux density threshold. The magnitude of the electrical property is determined, and the detection signal of the two-level voltage is output. In the switching system (switching system) using a magnetic sensor, especially in the automotive field, in order to provide safety to car users, it is required to construct the system from the viewpoint of functional safety (ISO26262). For example, it is required to eliminate the doubt that erroneous switching operations are performed due to the failure of the magnetic sensor element itself or the failure of the signal transmission path in the system.
圖4是習知的磁感測器裝置。磁感測器50包括:包含磁感測器的信號處理電路51、電晶體(transistor)52、定電流電路53及電阻54。判別電路59與磁感測器50共同連接GND,端子IN與磁感測器50的端子OUT連接。進而,磁感測器50的端子IN由上拉電阻58上拉至電壓VDD。Figure 4 is a conventional magnetic sensor device. The
磁感測器50將比電壓VDD低規定值的高位準值與比電壓GND高規定值的低位準值這二值輸出至端子OUT。判別電路59具有異常檢測功能,即,當輸入電壓位準為這二值附近以外的電壓時判定為異常。The
如此,藉由構成為將與電壓VDD或電壓GND不等價的規定電壓位準判斷為正常,從而可容易地檢測輸入端子的斷線等異常。例如,當磁感測器50的端子OUT與判別電路59的端子IN之間的配線發生斷線而成為開路(open)時,判別電路59的輸入位準成為電壓VDD,因此判定為異常。而且,當磁感測器50的端子OUT與判別電路59的端子IN之間的配線短路為電壓GND時,判別電路59的輸入位準成為電壓GND,因此判定為異常。 [現有技術文獻] [專利文獻]In this manner, by determining that the predetermined voltage level that is not equivalent to the voltage VDD or the voltage GND is normal, it is possible to easily detect an abnormality such as a disconnection of the input terminal. For example, when the wiring between the terminal OUT of the
專利文獻1:日本專利特開2001-165944號公報 [發明所欲解決之問題]Patent Document 1: Japanese Patent Laid-Open No. 2001-165944 [Problems to be Solved by Invention]
在所述電路結構的情況下,正常時的判別電路59的輸入電壓位準是由電阻54、定電流電路53、電晶體52及上拉電阻58所決定。因而存在下述問題,即,上拉電阻58會因製造偏差而電阻值有所偏差,因此輸入電壓位準會發生變動,從而導致判別電路59產生誤判定。In the case of the circuit structure, the input voltage level of the
[解決問題之手段] 為了解決此種問題,本發明的磁感測器的輸出控制電路具備連接於輸出端子的分壓電路與放大器,所述放大器對與磁感測器的輸出端子連接的MOS(Metal Oxide Semiconductor,金屬氧化物半導體)電晶體的閘極電壓進行控制,以使分壓電路的電壓與基準電壓變得相等。 [發明的效果][Means for Solving the Problem] In order to solve this problem, the output control circuit of the magnetic sensor of the present invention includes a voltage divider circuit connected to the output terminal and an amplifier, and the amplifier pair is connected to the output terminal of the magnetic sensor. The gate voltage of the MOS (Metal Oxide Semiconductor) transistor is controlled so that the voltage of the voltage divider circuit becomes equal to the reference voltage. [Effects of the invention]
根據本發明的磁感測器,磁感測器的輸出電壓是由基準電壓與分壓電路的分壓比來決定,因此具有不受上拉電阻的電阻值偏差影響的效果。因而,判別電路可準確地判定磁感測器裝置的配線的斷線或短路等異常。According to the magnetic sensor of the present invention, the output voltage of the magnetic sensor is determined by the voltage division ratio of the reference voltage and the voltage divider circuit, so it has the effect of not being affected by the resistance deviation of the pull-up resistor. Therefore, the discrimination circuit can accurately determine abnormalities such as disconnection or short-circuit of the wiring of the magnetic sensor device.
以下,參照圖式來說明本發明的實施形態。 圖1是表示本發明的磁感測器的第一實施形態的電路圖。 磁感測器裝置包含磁感測器1、上拉電阻18及判別電路19。Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a circuit diagram showing the first embodiment of the magnetic sensor of the present invention. The magnetic sensor device includes a
第一實施形態的磁感測器1包含磁感測器元件3、磁判定電路4及輸出控制電路10。輸出控制電路10包含MOS開關5、輸出驅動(drive)元件6、放大器(amplifier)7、基準電壓電路8以及作為分壓電路的電阻R1、電阻R2、電阻R3。The
磁感測器1的輸出端子OUT連接於判別電路19的輸入端子,且經由上拉電阻18而連接於外部電源端子VPU。磁感測器元件3的輸入端子連接於電源端子VDD及GND,輸出端子連接於磁判定電路4的輸入端子。輸出驅動元件6例如包含N通道(channel)MOSFET(Metal Oxide Semiconductor Field Effect Transistor,金屬氧化物半導體場效電晶體),汲極(drain)連接於輸出端子OUT,源極(source)連接於接地端子GND。電阻R1的一端連接於輸出端子OUT,另一端(節點(node)N1)連接於電阻R2的一端。電阻R2的另一端(節點N2)連接於電阻R3的一端。電阻R3的另一端連接於接地端子GND。放大器7的輸出端子連接於輸出驅動元件6的閘極,反相輸入端子連接於基準電壓電路8的輸出端子,非反相輸入端子連接於節點N1。MOS開關5例如包含N通道MOSFET,閘極連接於磁判定電路4的輸出端子,汲極連接於節點N2,源極連接於接地端子GND。The output terminal OUT of the
判別電路19除了對與磁感測器1所輸出的磁通密度相應的高位準值與低位準值進行區別的功能以外,還具有異常檢測功能。異常檢測功能是當所輸入的電壓為高位準值與低位準值的附近時,判定磁感測器裝置為正常,當所輸入的電壓為此以外的電壓區域時,判定磁感測器裝置為異常, 磁感測器元件3將電壓VDD作為電源,輸出與向磁感測器元件輸入的磁通密度相應的電信號。磁感測器元件3例如可使用霍爾(Hall)元件。磁判定電路4對磁感測器元件3所輸出的電信號與預先設定的閾值信號進行比較,並將磁判定結果以電壓VDD與電壓GND這二值電壓而輸出至輸出控制電路10。In addition to the function of distinguishing the high-level value and the low-level value corresponding to the magnetic flux density output by the
當磁判定電路4的輸出為電壓GND時,MOS開關5為斷開(OFF)狀態,節點N2藉由電阻R3而與接地端子GND連接。 另一方面,當磁判定電路4的輸出為電壓VDD時,MOS開關5為導通(ON)狀態,節點N2與接地端子GND連接。When the output of the
在輸出端子OUT與接地端子GND之間,與分壓電路電性並聯地連接有輸出驅動元件6。輸出驅動元件6為N通道MOSFET,藉由控制閘極電壓,可使汲極電流流經輸出端子OUT與接地端子GND之間。而且,放大器7的非反相輸入端子上連接有節點N1,反相輸入端子上連接有基準電壓電路8,輸出端子連接於輸出驅動元件6的閘極端子,因此控制輸出驅動元件6以使節點N1的電壓等於基準電壓電路8的基準電壓。Between the output terminal OUT and the ground terminal GND, an
若設磁感測器1的輸出端子OUT的輸出電壓為VOUT、基準電壓電路8的基準電壓為VREF,則輸出電壓VOUT根據磁判定結果的情況區分而以二個式來表達。 VOUT=(1+R1/R2)×VREF…(1) VOUT={1+R1/(R2+R3)}×VREF…(2) 式1表示磁判定電路4的輸出為電壓VDD時的輸出電壓VOUT。式2表示磁判定電路4的輸出為電壓GND時的輸出電壓VOUT。If the output voltage of the output terminal OUT of the
如此,磁感測器1的輸出電壓VOUT不依存於上拉電阻18的電阻值,因此不會相對於上拉電阻18的偏差而受到影響。因此,可靈活地設定上拉電阻值,因而,作為進一步的效果,藉由加大上拉電阻值,亦可實現磁感測器系統的省電化。In this way, the output voltage VOUT of the
以下,表示實現第一實施形態的磁感測器1的具體的電阻值的示例。 求出設外部電源VPU為5.0 V、基準電壓VREF為0.3 V時的、式1的輸出電壓VOUT為4.5 V、式2的輸出電壓VOUT為0.5 V的電路常數。根據式1及式2可知,R1:R2:R3的比率只要設定為7:0.5:10即可。The following shows an example of realizing the specific resistance value of the
更具體而言,由於不限定上拉電阻18的電阻值,因此電阻R1至電阻R3的電阻值越大越理想。若將RPU設為上拉電阻18的電阻值,則其容許值根據式3求出。 RPU>(VPU-VOUT(1))/{VOUT(1)/(R1+R2+R3)}…(3) 例如,若設R1=700 kΩ、R2=50 kΩ、R3=1 MΩ,則上拉電阻18的電阻值RPU只要小於194 kΩ,磁感測器1便可動作。 更現實而言,若考慮到輸出驅動元件6的汲極電流容許範圍,上拉電阻18的電阻值理想的是數十Ω以上。More specifically, since the resistance value of the pull-
如以上所說明般,根據第一實施形態的磁感測器1,判別電路19的輸入電壓是由基準電壓與分壓電路的分壓比來決定,因此不受上拉電阻18的電阻值偏差影響,而可準確地判定配線的斷線或短路等異常。 另外,亦可採取根據判別電路19所求出的輸入電壓,以可調整輸出電壓VOUT的方式使分壓電路的電阻為可微調(trimming)的構成。As described above, according to the
圖2是表示本發明的磁感測器的第二實施形態的電路圖。 磁感測器100包含磁感測器元件3、磁判定電路4及輸出控制電路20。輸出控制電路20包含輸出驅動元件6、放大器7、作為分壓電路的電阻R1及電阻R2、基準電壓電路81、基準電壓電路82以及MOS開關90。Fig. 2 is a circuit diagram showing a second embodiment of the magnetic sensor of the present invention. The
磁感測器100、判別電路19與上拉電阻18是與第一實施形態同樣地連接,並進行同樣的動作。進而,磁感測器元件3、磁判定電路4、輸出驅動元件6與放大器7是與第一實施形態同樣地連接,並進行同樣的動作,因此省略說明。The
MOS開關90例如包含CMOS電晶體,擇一性地選擇基準電壓電路81或者基準電壓電路82而連接於放大器7的反相輸入端子。MOS開關90具備控制端子,控制端子輸入有磁判定電路4所輸出的二值電壓。The
當磁判定電路4的輸出為電壓GND時,MOS開關90選擇基準電壓電路81,將基準電壓電路81的輸出端子連接至放大器7的反相輸入端子。 另一方面,當磁判定電路4的輸出為電壓VDD時,MOS開關90選擇基準電壓電路82,將基準電壓電路82的輸出端子連接至放大器7的反相輸入端子。When the output of the
設基準電壓電路81所生成的基準電壓為VREF1,基準電壓電路82所生成的基準電壓為VREF2。基準電壓VREF1與基準電壓VREF2是值互不相同的基準電壓。It is assumed that the reference voltage generated by the
若設磁感測器100的輸出端子OUT的輸出電壓為VOUT,則輸出電壓VOUT根據磁判定結果的情況區分而以二個式來表達。 VOUT=(1+R1/R2)×VREF1…(4) VOUT=(1+R1/R2)×VREF2…(5) 式4表示磁判定電路4的輸出為電壓GND時的輸出電壓VOUT。式5表示磁判定電路4的輸出為電壓VDD時的輸出電壓VOUT。Assuming that the output voltage of the output terminal OUT of the
以下,表示實現第二實施形態的磁感測器100的具體的數值例。 求出設外部電源VPU為5.0 V而式4的輸出電壓VOUT為4.5 V、式5的輸出電壓VOUT為0.5 V的電路常數。當以基準電壓VREF1成為3.0 V的方式來設定基準電壓電路81時,根據式4可知,R1:R2的比率只要設定為0.5:1即可。而且,根據式4及式5可知,基準電壓VREF2只要設定為0.33 V即可。Hereinafter, a specific numerical example for realizing the
圖3是表示本發明的磁感測器的第三實施形態的電路圖。 磁感測器200包含磁感測器元件3、磁判定電路4及輸出控制電路30。 基準電壓電路不同於第二實施形態,包含電阻91、電阻92及電阻93。而且,磁感測器200具備連接外部電源VPU的VDD2端子,VDD2端子連接於電阻93的一端與放大器7的反相輸入端子。電阻93藉由MOS開關90而連接於電阻91與電阻92中的任一個。並且,該些電阻是藉由對電壓VPU進行電阻分壓而獲得基準電壓。Fig. 3 is a circuit diagram showing a third embodiment of the magnetic sensor of the present invention. The
當磁判定電路4的輸出為電壓VDD時,MOS開關90選擇電阻91來與電阻93串聯連接。當磁判定電路4的輸出為電壓GND時,MOS開關90選擇電阻92來與電阻93串聯連接。When the output of the
設由外部電源VPU、電阻93及電阻91所生成的基準電壓為VREF1,設由外部電源VPU、電阻93及電阻92所生成的基準電壓為VREF2。基準電壓VREF1與基準電壓VREF2是值互不相同的基準電壓。 若設磁感測器200的輸出端子OUT的輸出電壓為VOUT,則輸出電壓VOUT是與第二實施形態的磁感測器100同樣地由式4與式5表示。Assume that the reference voltage generated by the external power source VPU, the
以下表示實現第三實施形態的磁感測器200的具體的數值例。 求出設外部電源VPU為5.0 V而式4的輸出電壓VOUT為4.5 V、式5的輸出電壓VOUT為0.5 V的電路常數。式4的輸出電壓VOUT與式5的輸出電壓VOUT之比為9:1,因此基準電壓VREF1與基準電壓VREF2之比亦設定為9:1。若設基準電壓VREF1為3.0 V、基準電壓VREF2為0.33 V,則根據式4可知,R1:R2的比率只要設定為0.5:1即可。進而,對於電阻91、電阻92與電阻93,藉由設電阻91為300 kΩ、電阻92為14 kΩ、電阻93為200 kΩ,從而可實現第三實施形態。The following shows a specific numerical example for realizing the
如以上所說明般,根據本發明的磁感測器,判別電路19的輸入電壓是由基準電壓與分壓電路的分壓比來決定,因此不會受到上拉電阻18的電阻值偏差影響,而可準確地判定配線的斷線或短路等異常。As explained above, according to the magnetic sensor of the present invention, the input voltage of the
1、50、100、200‧‧‧磁感測器3‧‧‧磁感測器元件4‧‧‧磁判定電路5、90‧‧‧MOS開關6‧‧‧輸出驅動元件7‧‧‧放大器8、81、82‧‧‧基準電壓電路10、20、30‧‧‧輸出控制電路18、58‧‧‧上拉電阻19、59‧‧‧判別電路51‧‧‧信號處理電路52‧‧‧電晶體53‧‧‧定電流電路54、91、92、93、R1、R2、R3‧‧‧電阻GND‧‧‧電壓、接地端子IN、VDD2‧‧‧端子N1、N2‧‧‧節點OUT‧‧‧輸出端子VDD‧‧‧電源端子、電壓VPU‧‧‧外部電源端子、外部電源1, 50, 100, 200‧‧‧
圖1是表示本發明的磁感測器的第一實施形態的電路圖。 圖2是表示本發明的磁感測器的第二實施形態的電路圖。 圖3是表示本發明的磁感測器的第三實施形態的電路圖。 圖4是表示習知的磁感測器裝置的電路圖。Fig. 1 is a circuit diagram showing the first embodiment of the magnetic sensor of the present invention. Fig. 2 is a circuit diagram showing a second embodiment of the magnetic sensor of the present invention. Fig. 3 is a circuit diagram showing a third embodiment of the magnetic sensor of the present invention. Fig. 4 is a circuit diagram showing a conventional magnetic sensor device.
1‧‧‧磁感測器 1‧‧‧Magnetic Sensor
3‧‧‧磁感測器元件 3‧‧‧Magnetic sensor components
4‧‧‧磁判定電路 4‧‧‧Magnetic determination circuit
5‧‧‧MOS開關 5‧‧‧MOS switch
6‧‧‧輸出驅動元件 6‧‧‧Output drive components
7‧‧‧放大器 7‧‧‧Amplifier
8‧‧‧基準電壓電路 8‧‧‧Reference voltage circuit
10‧‧‧輸出控制電路 10‧‧‧Output control circuit
18‧‧‧上拉電阻 18‧‧‧Pull-up resistor
19‧‧‧判別電路 19‧‧‧Distinguishing circuit
R1、R2、R3‧‧‧電阻 R1, R2, R3‧‧‧Resistor
GND‧‧‧電壓、接地端子 GND‧‧‧Voltage, ground terminal
N1、N2‧‧‧節點 N1、N2‧‧‧node
OUT‧‧‧輸出端子 OUT‧‧‧Output terminal
VDD‧‧‧電源端子、電壓 VDD‧‧‧Power terminal, voltage
VPU‧‧‧外部電源端子、外部電源 VPU‧‧‧External power supply terminal, external power supply
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6137287A (en) * | 1997-06-27 | 2000-10-24 | Mitsubishi Denki Kabushiki Kaisha | Physical parameter sensor having a self-testing circuit which recognizes an abnormal sensor state |
JP2001165944A (en) * | 1999-09-30 | 2001-06-22 | Toyota Motor Corp | Method of detecting abnormality of sensor |
TWI279524B (en) * | 2005-03-02 | 2007-04-21 | Tetra Laval Holdings & Finance | Magnetic sensors |
CN102270006A (en) * | 2011-06-28 | 2011-12-07 | 上海宏力半导体制造有限公司 | Voltage adjusting circuit |
TW201308819A (en) * | 2011-07-21 | 2013-02-16 | Sony Corp | Detection device, power reception device, power transmission device, contactless power transmission system, and detection method |
CN104571242A (en) * | 2013-10-15 | 2015-04-29 | 精工电子有限公司 | Voltage regulator |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2884985B2 (en) * | 1993-04-06 | 1999-04-19 | 住友電気工業株式会社 | Rotation sensor failure detection device |
JP2005265751A (en) * | 2004-03-22 | 2005-09-29 | Renesas Technology Corp | Magnetic detection circuit |
JP4745734B2 (en) * | 2005-06-30 | 2011-08-10 | 株式会社リコー | System power supply device and operation control method thereof |
JP2013012000A (en) * | 2011-06-29 | 2013-01-17 | Mitsumi Electric Co Ltd | Semiconductor integrated circuit for regulator |
US8990594B2 (en) * | 2012-08-28 | 2015-03-24 | Energy Pass Incorporation | Apparatus for measuring a remaining power of a battery includes a first memory for storing a routine code and a second memory for storing an exception code |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6137287A (en) * | 1997-06-27 | 2000-10-24 | Mitsubishi Denki Kabushiki Kaisha | Physical parameter sensor having a self-testing circuit which recognizes an abnormal sensor state |
JP2001165944A (en) * | 1999-09-30 | 2001-06-22 | Toyota Motor Corp | Method of detecting abnormality of sensor |
TWI279524B (en) * | 2005-03-02 | 2007-04-21 | Tetra Laval Holdings & Finance | Magnetic sensors |
CN102270006A (en) * | 2011-06-28 | 2011-12-07 | 上海宏力半导体制造有限公司 | Voltage adjusting circuit |
TW201308819A (en) * | 2011-07-21 | 2013-02-16 | Sony Corp | Detection device, power reception device, power transmission device, contactless power transmission system, and detection method |
CN104571242A (en) * | 2013-10-15 | 2015-04-29 | 精工电子有限公司 | Voltage regulator |
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