JP2017147037A - Electro-optical device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide: an electro-optical device in which deterioration in products can be prevented by subjecting an inspection terminal after inspection to insulation processing without adding a manufacturing process; and electronic equipment.SOLUTION: An electro-optical device of the present invention includes an element substrate including a display area where a plurality of light emitting elements are arrayed in a matrix and a terminal area where a plurality of mounting terminals are arrayed outside the display area. The element substrate includes a transistor circuit for driving the plurality of light emitting elements, an inspection terminal for inspecting the transistor circuit, and a sealing film for sealing the plurality of light emitting elements, the surface of the inspection terminal being covered with the sealing film.SELECTED DRAWING: Figure 4

Description

  The present invention relates to an electro-optical device and an electronic apparatus.

  2. Description of the Related Art Conventionally, in an electro-optical device, for example, an organic electroluminescence device (hereinafter referred to as an organic EL device), an element substrate on which an organic EL element serving as a light emitting pixel and a circuit for driving the organic EL element are formed is in the middle of manufacturing. An inspection terminal for inspecting the organic EL element and the drive circuit and an external connection terminal for connecting to an external circuit are provided. During the manufacture of the organic EL device, the electrical characteristics of the organic EL element and the drive circuit were measured using the inspection terminal, and a defect was detected at an early stage. On the other hand, after the completion of the organic EL device, when the inspection terminal is exposed, the drive circuit breaks down due to static electricity entering from the outside through the inspection terminal, causing malfunction. Therefore, in Patent Document 1, a planarizing film made of an insulating layer is formed on the inspection terminal, and in Patent Document 2, a protective film for preventing deterioration of the light emitting pixel, for example, a resin layer is formed on the inspection terminal. By forming, malfunction was prevented.

JP 2010-33090 A JP 2010-160950 A

  However, since the inspection terminal in Patent Document 1 is provided adjacent to the light emitting pixel between the light emitting pixel and the drive circuit, the surface of the element substrate is caused by scratches caused by bringing the probe into contact with the inspection terminal during inspection. Concavities and convexities were formed on the film, and the film thickness was not uniform in the coating process when forming the subsequent color filter. Further, there is a problem that a defect occurs in the sealing layer for protecting the organic EL element, and the reliability quality of the organic EL device is lowered. In addition, since the inspection terminals in Patent Document 2 are provided for each light emitting pixel, there is a problem in reducing the reliability quality due to the scratch during the inspection and reducing the size of the organic EL device and miniaturizing the light emitting pixels. It was.

  Moreover, the external connection terminal and the inspection terminal have a laminated structure using a transparent conductive film such as ITO. When the material of the surface of the inspection terminal is ITO, when a pointed needle (probe) is brought into contact with the inspection terminal, the surface of the ITO is scraped, cracked, and the like, causing dust generation. Therefore, measures such as making the structure of the inspection terminal different from that of the external connection terminal have been taken, but since the inspection terminal is exposed on the surface when the product is used, the inspection terminal is electrically connected to other terminals due to foreign matter etc. There was a possibility that the quality could be degraded, such as a short circuit. Moreover, although the countermeasure which performs an insulation process with respect to a test | inspection terminal is also considered, a process process must be added further.

  The present invention has been made in view of the above-described problems of the prior art, and can be used to insulate the inspection terminals after the inspection without adding a manufacturing process to prevent deterioration of the product. One of the purposes is to provide a device and an electronic device.

  An electro-optical device according to an aspect of the present invention includes an element substrate including a display region in which a plurality of light emitting elements are arranged in a matrix and a terminal region in which a plurality of mounting terminals are arranged outside the display region. The element substrate includes a transistor circuit that drives the plurality of light emitting elements, an inspection terminal that inspects the transistor circuit, and a sealing film that seals the plurality of light emitting elements. The surface is covered with the sealing film.

  According to this, since the surface of the inspection terminal is covered with the sealing film that seals the light emitting element, it is possible to insulate the inspection terminal without adding a manufacturing process. Therefore, it can prevent that a product deteriorates because a test | inspection terminal short-circuits with another terminal.

  In the electro-optical device according to one embodiment of the present invention, the inspection terminal may exist between the mounting terminal and the transistor circuit.

  According to this, by providing an inspection terminal in a region where an existing sealing film is formed, the surface of the inspection terminal can be covered in a normal manufacturing process.

  In the electro-optical device according to one aspect of the present invention, the mounting terminal is configured by a plurality of stacked wiring layers, and the inspection terminal is configured by the wiring layer below the uppermost wiring layer. May be.

  According to this, since it is not necessary to form a separate inspection terminal, the configuration can be simplified.

  An electronic apparatus according to one embodiment of the present invention includes the above electro-optical device.

  According to this, a highly reliable electronic device can be provided.

  An electro-optical device manufacturing method according to an aspect of the present invention includes: forming a plurality of light emitting elements in a display region of an element substrate; and a transistor circuit for driving the plurality of light emitting elements; A step of forming a plurality of mounting terminals in an outer terminal region, a step of forming a plurality of inspection terminals between the mounting terminals and the transistor circuit, and the light emission after the inspection of the transistor circuit by the inspection terminals is completed. Forming a sealing film for sealing the element, and in the step of forming the sealing film, the sealing film is formed so as to cover the surfaces of the plurality of inspection terminals.

FIG. 2 is a plan view schematically showing the configuration of the organic EL device 100. FIG. 2 is a circuit diagram showing a configuration of an element substrate 10. FIG. 3 is a circuit diagram illustrating a configuration of a pixel circuit 110. Sectional drawing which follows the AA line of the organic electroluminescent apparatus shown in FIG. 5 is a flowchart showing a method for manufacturing the organic EL device 100. FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the organic EL device 100. FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the organic EL device 100. The figure which shows a mode that the test | inspection probe was made to contact the test | inspection terminal. FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the organic EL device 100. FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the organic EL device 100. FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the organic EL device 100. FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the organic EL device 100. Schematic which shows the head mounted display (HMD) as an electronic device.

(Organic EL device)
First, an organic EL device (electro-optical device) 100 shown in FIG. 1 will be described as an embodiment of the present invention.
The organic EL device 100 is a self-luminous display device shown as an example of the “electro-optical device” in the present invention. FIG. 1 is a plan view schematically showing the configuration of the organic EL device 100.

  As shown in FIG. 1, the organic EL device 100 includes an element substrate 10 and a sealing substrate 70. The element substrate 10 and the sealing substrate 70 are bonded to each other by an adhesive (not shown) while facing each other. For example, an epoxy resin or an acrylic resin can be used as the adhesive.

  The element substrate 10 has, as light emitting elements, a sub pixel 20B in which an organic EL element (light emitting element) 30B that emits blue (B) light is disposed, and a sub pixel in which an organic EL element 30G that emits green (G) light is disposed. The pixel 20G and the display area E1 in which the sub-pixel 20R in which the organic EL element 30R that emits red (R) light is arranged are arranged in a matrix.

  In the organic EL device 100, the sub-pixel 20B, the sub-pixel 20G, and the sub-pixel 20R are used as a display unit to provide a full color display. In the following description, the sub pixel 20B, the sub pixel 20G, and the sub pixel 20R may be collectively handled as the pixel 20, and the organic EL element 30B, the organic EL element 30G, and the organic EL element 30R are collectively referred to as the organic EL element 30. May be treated as

  A color filter 50 is provided in the display area E1. Of the color filter 50, a blue colored layer 50B is disposed on the organic EL element 30B of the sub-pixel 20B, and a green colored layer 50G is disposed on the organic EL element 30G of the sub-pixel 20G. A red colored layer 50R is disposed on the organic EL element 30R of the sub-pixel 20R. The light emitted from the organic EL element 30B of the sub-pixel 20B is transmitted through the blue colored layer 50B and is blocked by the green colored layer 50G and the red colored layer 50R. Similarly, the light emitted from the organic EL element 30G of the sub-pixel 20G is transmitted through the green colored layer 50G, shielded by the blue colored layer 50B and the red colored layer 50R, and the organic EL element 30R of the sub-pixel 20R. The light emitted from the light passes through the red colored layer 50R and is blocked by the blue colored layer 50B and the green colored layer 50G. Therefore, the direction of light extracted from the organic EL device 100 is defined by the position of each organic EL element 30 and the position of each colored layer of the color filter 50.

In this embodiment, the pixels 20 that can emit light of the same color are arranged in the Y direction (first direction), and the pixels 20 that can emit light of different colors intersect (orthogonal) with respect to the Y direction (first direction). 2 direction). Therefore, the arrangement of the pixels 20 is a so-called stripe method.
Depending on the arrangement of the pixels, the organic EL element 30B, the organic EL element 30G, and the organic EL element 30R are arranged in stripes, and the blue colored layer 50B, the green colored layer 50G, and the red colored layer 50R are also included. They are also arranged in stripes. The arrangement of the pixels 20 is not limited to the stripe method, and may be a mosaic method or a delta method.

  The organic EL device 100 has a top emission structure. Therefore, the light emitted from the organic EL element 30 passes through the color filter 50 of the element substrate 10 and is emitted as display light from the sealing substrate 70 side.

  Since the organic EL device 100 has a top emission structure, an opaque ceramic substrate or semiconductor substrate can be used as a base material of the element substrate 10 in addition to a transparent quartz substrate or glass substrate. In the present embodiment, a silicon substrate (semiconductor substrate) is used as the base material of the element substrate 10.

  A terminal region E2 in which mounting terminals 103 are arranged is provided outside the display region E1. In the terminal region E2, a plurality of mounting terminals 103 are arranged along one side of the long side of the element substrate 10. A data line driving circuit (transistor circuit) 101 is provided between the plurality of mounting terminals 103 and the display area E1. Further, a scanning line driving circuit (transistor circuit) 102 is provided between the two sides on the short side of the element substrate 10 and the display area E1. In the following description, the direction along the long side of the element substrate 10 is the X direction, the direction along the short side of the element substrate 10 is the Y direction, and the direction from the sealing substrate 70 toward the element substrate 10 is the direction. The direction is Z (+).

  The sealing substrate 70 is smaller than the element substrate 10 and is disposed to face the element substrate 10 so that the surface of the mounting terminal 103 is exposed. The sealing substrate 70 is a light-transmitting substrate, and a quartz substrate, a glass substrate, or the like can be used. The sealing substrate 70 has a role of protecting the organic EL element 30 disposed in the display area E1 from being damaged, and is provided wider than the display area E1.

  FIG. 2 is a circuit diagram showing a configuration of the element substrate 10. 2, the element substrate 10 is provided with m rows of scanning lines 12 extending in the X direction, and n columns of data lines 14 extending in the Y direction. The element substrate 10 is provided with a power supply line 19 extending in the Y direction for each column along the data line 14.

  The element substrate 10 is provided with a pixel circuit 110 corresponding to the intersection of the m rows of scanning lines 12 and the n columns of data lines 14. The pixel circuit 110 forms part of the pixel 20. In the display region E1, m rows × n columns of pixel circuits 110 are arranged in a matrix.

  A reset potential Vorst for initialization is supplied (powered) to the power line 19. Further, although not shown, three control lines for supplying control signals Gcmp, Gel, and Gorst are provided in parallel with the scanning lines 12.

  The scanning line 12 is electrically connected to the scanning line driving circuit 102. The data line 14 is electrically connected to the data line driving circuit 101. The scanning line driving circuit 102 is supplied with a control signal Ctr1 for controlling the scanning line driving circuit 102. The data line driving circuit 101 is supplied with a control signal Ctr2 for controlling the data line driving circuit 101.

  The scanning line driving circuit 102 scans the scanning lines 12 for each row over a frame period, scanning signals Gwr (1), Gwr (2), Gwr (3),..., Gwr (m−1), Gwr. (M) is generated according to the control signal Ctr1. Further, the scanning line driving circuit 102 supplies control signals Gcmp, Gel, and Gorst to the control lines in addition to the scanning signal Gwr. The frame period is a period in which an image for one cut (frame) is displayed on the organic EL device 100. For example, if the frequency of the vertical synchronization signal included in the synchronization signal is 120 Hz, the period of one frame Is about 8.3 milliseconds.

  The data line driving circuit 101 applies the data signals Vd (1), Vd (2), Vd (2), the potentials corresponding to the gradation data of the pixel circuit 110 to the pixel circuit 110 located in the row selected by the scanning line driving circuit 102. .., Vd (n) is supplied to the data lines 14 in the first, second,.

  FIG. 3 is a circuit diagram illustrating a configuration of the pixel circuit 110. As illustrated in FIG. 3, the pixel circuit 110 includes P-channel MOS transistors 121, 122, 123, 124, 125, an organic EL element 30, and a capacitor 21. The pixel circuit 110 is supplied with the above-described scanning signal Gwr, control signals Gcmp, Gel, Gorst, and the like.

  The organic EL element 30 has a structure in which a light emitting functional layer (light emitting layer) 32 is sandwiched between a pixel electrode (first electrode) 31 and a counter electrode (second electrode) 33 facing each other.

  The pixel electrode 31 is an anode that supplies holes to the light emitting functional layer 32 and is formed of a light-transmitting conductive material. In the present embodiment, for example, an ITO (Indium Tin Oxide) film having a thickness of 200 nm is formed as the pixel electrode 31. The pixel electrode 31 is electrically connected to one of the drain of the transistor 124 and the source or drain of the transistor 125.

  The common electrode 33 is a cathode that supplies electrons to the light emitting functional layer 32, and is formed of a conductive material having light transmissivity and light reflectivity, such as an alloy of magnesium (Mg) and silver (Ag). . The common electrode 33 is a common electrode provided across the plurality of pixels 20, and is electrically connected to the power supply line 8. The power supply line 8 is supplied with a potential Vct which is the lower side of the power supply in the pixel circuit 110.

  The light emitting functional layer 32 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and the like, which are sequentially stacked from the pixel electrode 31 side. In the organic EL element 30, the holes supplied from the pixel electrode 31 and the electrons supplied from the common electrode 33 are combined in the light emitting functional layer 32, so that the light emitting functional layer 32 emits light.

  The element substrate 10 is provided with power supply lines 6 extending in the X direction so as to intersect the power supply lines 19. The power supply line 6 may be provided so as to extend in the Y direction, or may be provided so as to extend in both the X direction and the Y direction. The source of the transistor 121 is electrically connected to the power supply line 6, and the drain is electrically connected to the source of the transistor 123 or the other of the drain and the source of the transistor 124. The power supply line 6 is supplied with a potential Vel which is the higher power supply side in the pixel circuit 110. Further, one end of a capacitor 21 is electrically connected to the power supply line 6. The transistor 121 functions as a driving transistor that passes a current according to the voltage between the gate and the source of the transistor 121.

The transistor 122 has a gate electrically connected to the scanning line 12 and one of a source and a drain electrically connected to the data line 14. In the transistor 122, the other of the source and the drain is electrically connected to the gate of the transistor 121, the other end of the capacitor 21, and one of the source and the drain of the transistor 123.
The transistor 122 is electrically connected between the gate of the transistor 121 and the data line 14, and functions as a writing transistor that controls the electrical connection between the gate of the transistor 121 and the data line 14.

  The transistor 123 has a gate electrically connected to a control line and is supplied with a control signal Gcmp. The transistor 123 functions as a threshold compensation transistor that controls electrical connection between the gate and drain of the transistor 121.

  The gate of the transistor 124 is electrically connected to the control line, and the control signal Gel is supplied. The drain of the transistor 124 is electrically connected to one of the source and drain of the transistor 125 and the pixel electrode 31 of the organic EL element 30. The transistor 124 functions as a light emission control transistor that controls electrical connection between the drain of the transistor 121 and the pixel electrode 31 of the organic EL element 30.

  The gate of the transistor 125 is electrically connected to the control line, and the control signal Gorst is supplied. The other of the source and the drain of the transistor 125 is electrically connected to the power line 19 and is supplied with a reset potential Vorst. The transistor 125 functions as an initialization transistor that controls electrical connection between the power supply line 19 and the pixel electrode 31 of the organic EL element 30.

  In the following description, the transistors 122, 123, 124, and 125 may be simply referred to as a transistor T.

4 is a cross-sectional view taken along the line AA of the organic EL device shown in FIG.
In FIG. 4, each of the plurality of conductors is illustrated as a single metal layer or a laminated film of two to three metal layers.

  As shown in FIG. 4, the organic EL device 100 includes a base material 11, and a circuit layer 5 that is formed on the base material 11 in order and includes a pixel circuit 110, a data line driving circuit 101, a scanning line driving circuit 102, and the like. , An organic EL element 30, a sealing layer 34 that seals the plurality of organic EL elements 30, a color filter 50, an element substrate 10 including a filler 42, and a sealing substrate 70. Yes.

  The sealing substrate 70 is made of a substrate that is transparent to the visible light region, such as quartz glass, for example, and is provided with a filler 42 to protect the color filter 50 formed on the sealing layer 34 in the element substrate 10. And disposed opposite to the element substrate 10.

  Light emitted from the light emitting functional layer 32 of the subpixels 20R, 20G, and 20B (FIG. 1) is reflected by a conductor 71 described later, and is extracted from the sealing substrate 70 side through the color filter 50. That is, the organic EL device 100 is a top emission type light emitting device.

  Since the organic EL device 100 is a top emission type, the substrate 11 can be not only a transparent substrate such as quartz glass but also an opaque substrate such as silicon (Si) or ceramics. Hereinafter, a case where a silicon substrate (semiconductor substrate) is used as the base material 11 and a transistor is used for the pixel circuit 110 will be described as an example.

As shown in FIG. 4, the transistor T of the pixel circuit 110 is formed in the display region E1 on the surface of the base material 11, and is between the element substrate 10 and the sealing substrate 70 and outside the display region E1. In this region, a transistor (not shown) of a data line driving circuit (not shown) is formed.
The transistor T includes an active region (source / drain region) formed on the surface of the base material 11, an interlayer insulating film L ₀ (gate insulating film) covering the surface of the base material 11, and the interlayer insulating film L ₀ . And a formed gate G. The active region (not shown) is configured by an ion implantation region in which impurity ions are implanted into the base material 11. The channel region of the transistor T of the pixel circuit 110 exists between the source region and the drain region. In the channel region, ions of a different type from the active region are implanted, but the illustration is omitted. The gate G of the transistor T is disposed at a position facing the channel region across the interlayer insulating film L _0.

As shown in FIG. 4, a plurality of interlayer insulating films (L _{A to} L _E ) and a plurality of wiring layers (W _{A to} W _E ) are formed on the interlayer insulating film L ₀ on which the gate G of each transistor T is formed. And a multilayer wiring layer is formed. Each of the interlayer insulating films L _{A to} L _E is formed of an insulating inorganic material such as a silicon compound (typically silicon nitride or silicon oxide). Each of the wiring layers W _{A to} W _E is formed of a low resistance conductive material containing aluminum, silver, or the like.

  As described above, the mounting terminal 103 and the inspection terminal 66 are provided on the base material 11 via the plurality of insulating layers described above. The mounting terminal 103 and the inspection terminal 66 are interface units that exchange signals between the organic EL panel 100A (panel structure before bonding the external connection substrate 104) and the outside.

Mounting terminal 103 is composed of a plurality of wiring layers 81 to 84 are laminated with an interlayer insulating film L _D and the interlayer insulating film L _E. Specifically, the first wiring layer 81 provided on the upper surface of the inter-layer insulating film L _C, and the second wiring layer 82 provided with an interlayer insulating film L _D on the first wiring layer 81, the second and a third wiring layer 83 provided with an interlayer insulating film L _E on the wiring layer 82, and the mounting terminal surface layer 84 laminated directly on the third wiring layer 83, a. The first wiring layer 81, the second wiring layer 82, and the third wiring layer 83 are made of a laminated film of (Ti) / AlCu (aluminum / copper alloy). The second wiring layer 82 and the third wiring layer 83 are electrically connected to one electrode of a transistor included in the data line driving circuit 101 or the scanning line driving circuit 102.

  The mounting terminal surface layer 84 is a transparent conductive film made of, for example, ITO (indium tin oxide). As described above, the mounting terminal surface layer 84 is electrically connected to terminals (terminals of the flexible substrate 36) for connecting to external circuits. It is not limited to ITO, but ITZO (Zn doped indium tin oxide), ITSO (indium tin oxide containing silicon oxide), or the like may be used.

  The inspection terminal 66 is provided to inspect the organic EL panel (non-defective product selection, characteristic acquisition, etc.) before joining the external connection substrate 104, and is a terminal that is contacted by a needle probe or an FPC probe. In addition, various signals necessary for inspection are input to the inspection terminal 66 from an external control device. The inspection terminal 66 is an aluminum alloy.

  As shown in FIGS. 1 and 4, the inspection terminal 66 is disposed between the data line driving circuit 101 or the scanning line driving circuit 102 and the mounting terminal 103. The inspection terminal 66 corresponding to the data line driving circuit 101 among the plurality of inspection terminals 66 is configured using a wiring layer of the mounting terminal 103 connected to the data line driving circuit 101. On the other hand, the inspection terminal 66 corresponding to the scanning line driving circuit 102 is configured using a wiring layer of the mounting terminal 103 connected to the scanning line driving circuit 102.

  As shown in FIG. 4, the inspection terminal 66 is formed in a layer (layer) different from the mounting terminal surface layer 84. Specifically, the inspection terminal 66 is configured by a part of the second wiring layer 82 on the lower layer side than the mounting terminal surface layer 84 among the plurality of wiring layers 81, 82, 83, 84 configuring the mounting terminal 103. Yes. The inspection terminal 66 is electrically connected to one electrode of the transistor T constituting the data line driving circuit 101 or the scanning line driving circuit 102.

  In the same layer as the mounting terminal surface layer 84, the pixel electrode 31 made of ITO or the like is formed. The pixel electrode 31 is electrically connected to one electrode of the transistor T constituting the pixel circuit 110 described above.

A Cav adjustment layer 61 made of SiN is formed on the upper surface of the interlayer insulating film LE so as to cover the conductor 71. A planarizing layer 37 made of SiO ₂ and a light shielding layer 39 made of TiN are formed on the Cav adjusting layer 61. The first optical adjustment layer 62 and the second optical adjustment layer 63 are stacked on the Cav adjustment layer 61 so as to cover the planarization layer 37 and the light shielding layer 39. First optical adjustment layer 62 and the second optical adjustment layer 63 are laminated in this order on Cav adjustment layer 61, each is composed of SiO _2.

  In the present embodiment, an opening hole 28 penetrating each of the layers located above the inspection terminal 66 is provided, and the bottom surface of the opening hole 28 is constituted by the inspection terminal 66. The surface of the inspection terminal 66 is covered with a first sealing film 34a and a second sealing film 34c described later.

  The pixel electrode 31 is formed on the upper surface of the second optical adjustment layer 63. On the upper surface of the second optical adjustment layer 63 including the pixel electrode 31, a pixel separation layer 38 that exposes a part of the pixel electrode 31 and separates adjacent subpixels 20R, 20G, and 20B (FIG. 1) is formed. Yes. The pixel separation layer 38 is also formed in the terminal region E2, and a part of the surface of the mounting terminal 103 is exposed through the opening hole 35A.

  The light emitting functional layer 32 is formed by using a vapor phase process such as a vacuum deposition method so as to be in contact with the pixel electrode 31, and also covers a part of the surface of the pixel separation layer 38. Note that the light emitting functional layer 32 may be formed in a region partitioned by the pixel separation layer 38.

  The light emitting functional layer 32 includes, for example, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer. In the present embodiment, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer are formed on the pixel electrode 31 using a vapor phase process, and are sequentially stacked. A light emitting functional layer 32 is formed. The layer structure of the light emitting functional layer 32 is not limited to this, and may further include an intermediate layer that controls the movement of holes and electrons as carriers. For example, the organic light emitting layer has a function of an electron transport layer. It is possible to reduce the number of layers. The organic light emitting layer may be configured to obtain white light emission. For example, an organic light emitting layer capable of obtaining red light emission, an organic light emitting layer capable of obtaining green light emission, and an organic light emitting layer capable of obtaining blue light emission; It is possible to adopt a combination of the above.

  The common electrode 33 is a common cathode of the plurality of organic EL elements 30 and is formed so as to cover the light emitting functional layer 32. The common electrode 33 is formed, for example, by depositing an alloy of Mg and Ag with a film thickness (e.g., 10 nm to 30 nm) at which light transmittance and light reflectivity are obtained. In the present embodiment, the light transmittance of the common electrode 33 is preferably 20% or more, more preferably 30% or more, and the light reflectance of the common electrode 33 is preferably 20% or more, more preferably 50% or more. . As a result, a plurality of organic EL elements 30 are completed.

  An optical resonator may be formed between the conductor 71 and the common electrode 33 for each of the sub-pixels 20R, 20G, and 20B by forming the common electrode 33 in a state having light transmittance and light reflectivity. . The optical resonator extracts light having a specific resonance wavelength by making the optical distance between the conductor 71 and the common electrode 33 different for each of the sub-pixels 20R, 20G, and 20B. As a result, the color purity of light emitted from the sub-pixels 20R, 20G, and 20B can be increased. The optical distance is obtained as the sum of products of refractive indexes and film thicknesses of various functional films sandwiched between the conductor 71 and the common electrode 33 constituting the optical resonator. Therefore, as a method for making the optical distance different for each of the sub-pixels 20R, 20G, and 20B, a method for making the film thickness of the pixel electrode 31 different for each color, or a first method between the conductor 71 and the pixel electrode 31. There is a method of making the film thicknesses of the optical adjustment layer 62 and the second optical adjustment layer 63 different. When the organic EL element 30 has a resonance structure as described above, the light emitted from the organic EL element 30 is light emitted from the common electrode 33 to the sealing layer 34 described later. It is light of a spectrum different from the spectrum of light emitted internally.

  Next, a sealing layer 34 that covers the plurality of organic EL elements 30 is formed so that water, oxygen, and the like do not enter. The sealing layer 34 of this embodiment is formed by laminating a first sealing film (sealing film) 34a, a buffer film 34b, and a second sealing film (sealing film) 34c in this order from the common electrode 33 side. is there.

The gas barrier property of the sealing layer 34 is not particularly limited as long as the organic EL element 30 can be protected from oxygen and water in the atmosphere, but the oxygen permeability is 0.01 cc / m ^2. The water vapor permeability is preferably 7 × 10 ⁻³ g / m ² / day or less, more preferably 5 × 10 ⁻⁴ g / m ² / day or less, particularly 5 × 10 ⁻⁶ g / m ^2. / Day or less is preferable. The light transmittance of the sealing layer 34 is preferably 80% or more with respect to the light emitted from the common electrode 33.

As the first sealing film 34a and the second sealing film 34c, for example, a silicon oxide film (SiO) or a silicon nitride film (Si _X N _Y ), which is an inorganic material that has optical transparency and excellent gas barrier properties, is used. A silicon oxynitride film (SiO _X N _Y ) and those containing these as main components are preferable.

  Examples of the method for forming the first sealing film 34a and the second sealing film 34c include a vacuum deposition method, a sputtering method, a CVD (Chemical Vapor Deposition) method, and an ion plating method. As the first sealing film 34a and the second sealing film 34c are made thicker, a higher gas barrier property can be realized. On the other hand, cracks are easily generated due to film stress caused by expansion and contraction of the film. Therefore, it is preferable to control the film thickness to about 200 nm to 1000 nm, respectively. In this embodiment, the first sealing film 34a and the second sealing film 34c are overlapped with the buffer film 34b interposed therebetween to achieve high gas barrier properties. Realized.

  The buffer film 34b can be formed using, for example, an epoxy resin or a coating-type inorganic material (such as silicon oxide) having excellent thermal stability. Further, if the buffer film 34b is applied and formed by a printing method such as a screen or a quantitative discharge method, the surface of the buffer film 34b can be flattened. That is, the buffer film 34b can also function as a planarizing layer that relaxes the unevenness of the surface of the first sealing film 34a. The thickness of the buffer film 34b is in the range of 1 μm to 5 μm, more preferably 1.5 μm to 2.0 μm.

  In the present embodiment, as shown in FIG. 4, the sealing structure in the terminal region E2 is mainly composed of a first sealing film 34a and a second sealing film 34c. The buffer film 34b is not sandwiched between the first sealing film 34a and the second sealing film 34c. In the display area E1, irregularities are generated not only by the structure such as the pixel circuit 110 and the organic EL element 30, but it is necessary to reduce the irregularities by sandwiching the buffer film 34b. On the other hand, since the organic EL element 30 or the like does not exist in the terminal region E2, it is not necessary to consider the unevenness of the base so much.

  In the first sealing film 34a and the second sealing film 34c existing in the terminal region E2, opening holes 35A are formed at positions corresponding to the plurality of mounting terminals 103, respectively. At least a part of the surface of each mounting terminal 103 is exposed to the outside through the opening hole 35A provided in the first sealing film 34a and the second sealing film 34c.

  In the present embodiment, the first sealing film 34 a and the second sealing film 34 c are provided so as to fill the inside of the opening hole 28 located on the inspection terminal 66. Thus, the inspection terminal 66 is configured not to be exposed to the outside in the product state.

  On the sealing layer 34, colored layers 50R, 50G, and 50B corresponding to the sub-pixels 20R, 20G, and 20B of the respective colors are formed. As a method of forming the color filter 50 composed of the colored layers 50R, 50G, and 50B, a photosensitive resin layer is formed by applying a photosensitive resin in which a color material such as a dye or pigment corresponding to each color is dispersed in a solvent. In addition, a method of exposing and developing this by a photolithography method may be used.

  The color layers 50R, 50G, and 50B may have the same film thickness, or at least one color may be different from the other colors. In any case, the film thickness is set such that appropriate chromaticity and white balance can be obtained when the light emitted from the organic EL element 30 passes through each colored layer (50R, 50G, 50B).

  The sealing substrate 70 is bonded to the element substrate 10 via the filler 42 in the display region E1 of the element substrate 10. As a function of the filler 42, it is necessary that the wettability and adhesion between the sealing substrate 70 and the element substrate 10 are good, and that the filler 42 is transparent to light emission from the organic EL element 30. The Therefore, examples of the filler 42 include resin materials such as urethane, acrylic, epoxy, and polyolefin. The thickness of the filler 42 is, for example, 10 μm to 100 μm.

  The external connection substrate 104 is disposed to face the terminal region E2 of the element substrate 10 and is fixed to the element substrate 10 via an anisotropic conductive adhesive (ACF) 106. . Alternatively, a paste-like anisotropic conductive adhesive (ACP) may be used. The anisotropic conductive adhesive 106 is a mixture of thermosetting resin 106a and fine metal particles 106b. Via these metal particles 106b, the mounting terminals 103 on the element substrate 10 side and the external connection substrate 104 are connected. The external connection terminal 108 is electrically connected.

<Method for manufacturing organic EL device>
Next, a method for manufacturing the organic EL device 100 of this embodiment will be described.
Here, a method of forming the opening hole 35B, which is a characteristic part of the present invention, will be described in detail.
FIG. 5 is a flowchart showing a method for manufacturing the organic EL device 100.
6 and 7 are schematic cross-sectional views illustrating a method for manufacturing the organic EL device 100.
FIG. 8 is a diagram illustrating a state in which the inspection probe is brought into contact with the inspection terminal.
9 to 12 are schematic cross-sectional views illustrating a method for manufacturing the organic EL device 100.
6 and 7 and FIGS. 9 to 12 are schematic cross-sectional views of a region corresponding to FIG.

  As shown in FIG. 5, the manufacturing method of the organic EL device 100 of this embodiment includes a resist pattern forming step S1, an inspection terminal opening step S2, a circuit inspection S3, a sealing layer forming step S4, a color filter forming step S5, a sealing A stop substrate bonding step S6, a mounting terminal opening step S7, and an external connection substrate bonding S8 are included.

  The pixel circuit 110, other peripheral circuits, the circuit layer 5 including signal wiring, and the pixel electrode 31 are formed on the substrate 11 by a known film formation technique, hole filling technique, planarization technique, and other accompanying processes. Can be adopted. In this way, the circuit layer 5 to the pixel electrode 31 are formed on the base material 11 as shown in FIG.

<Resist pattern formation process S1)>
As shown in FIG. 6, first, a photoresist is applied with a predetermined film thickness so as to cover the outermost surface of the element substrate 10 to form a resist film. Further, the obtained resist film is patterned by exposing and developing, thereby forming a resist pattern 17 having an opening 17A at a position where an inspection terminal 66 is to be formed.

<Inspection terminal opening step S2>
Next, using the resist pattern 17 having the opening 17A as a mask, the plurality of laminated films existing on the second wiring layer 82 are patterned by a known etching technique using the second wiring layer 82 as an etching stopper, and FIG. An opening hole 28 as shown is formed. Thereafter, the resist pattern 17 is removed, and the second wiring layer 82 exposed from the opening hole 28 functions as the inspection terminal 66.

<Circuit inspection S3>
Next, as shown in FIG. 8, a probe (inspection needle) 13 is brought into contact with an inspection terminal 66 to conduct it, and the data line driving circuit 101 and the scanning line driving circuit 102 are inspected, and the organic EL panel 100A. Examine the characteristics of

<Sealing layer forming step S4>
Next, as shown in FIG. 9, first, the organic EL element 30 is formed by a known film forming technique or the like, and then the display region E1 (common electrode 33) and the terminal region E2 (mounting terminal 103) are covered. 1 sealing film 34a is formed. As a method for forming the first sealing film 34a, for example, a silicon oxide film (SiO), a silicon nitride film (Si _X N _Y ) or a silicon oxynitride (SiO _X N _Y ) is vacuum deposited, sputtered, or CVD. And a method of forming a film by an ion plating method. The film thickness of the first sealing film 34a is preferably in the range of approximately 200 nm to 1000 nm, and in this case, it is set to 400 nm.

  In the present embodiment, the first sealing film 34 a is formed so as to fill the opening hole 28 exposing the inspection terminal 66, and the surface of the inspection terminal 66 is sealed. Thereby, the surface of the inspection terminal 66 is covered and insulated from other terminals.

  Next, a buffer film 34b that covers the first sealing film 34a is formed. It is desirable that the buffer film 34b is formed so as not to reach the boundary between the terminal region E2 and the sealing substrate 70 but to fit in the display region E1. As a method for forming the buffer film 34b, for example, a solution containing a transparent epoxy resin and an epoxy resin solvent is used, and the solution is applied by a printing method or a quantitative discharge method, and dried to obtain an epoxy resin. A buffer film 34b made of is formed. The thickness of the buffer film 34b is preferably 1 μm to 5 μm, more preferably 1.5 μm to 2.0 μm. In this case, it was 2 μm.

  The buffer film 34b is not limited to be formed using an organic material such as an epoxy resin. For example, a silicon oxide film having a thickness of about 2 μm may be formed as the buffer film 34b by applying a coating-type inorganic material by a printing method and drying and baking the material.

Subsequently, a second sealing film 34c that covers the buffer film 34b is formed on the first sealing film 34a. The method of forming the second sealing film 34c is the same as that of the first sealing film 34a. For example, a silicon oxide film (SiO), a silicon nitride film (Si _X N _Y ), or a silicon oxynitride (SiO _X N _{Y) is used.} ) May be formed by a vacuum deposition method, a sputtering method, a CVD method, an ion plating method, or the like. The film thickness of the second sealing film 34c is preferably in the range of approximately 200 nm to 1000 nm, and in this case, it is set to 800 nm.

  The second sealing film 34c is formed over the display region E1 and the terminal region E2, and is also formed in the opening hole 28 in the terminal region E2. The surface of the inspection terminal 66 is covered with the first sealing film 34a and the second sealing film 34c filled in the opening hole 28 so as not to be exposed to the outside.

<Color filter forming step S5>
First, as shown in FIG. 10, an insulating layer 43 is formed on the surface of the second sealing film 34c. The insulating layer 43 separates the colored layers 50R, 50G, and 50B having different colors. The insulating layer 43 is made of a photosensitive resin material that does not contain a color material. First, a photosensitive resin material not containing a coloring material is applied over the entire surface of the substrate 11 using a spin coating method or the like to form a photosensitive resin layer, and this photosensitive resin layer is exposed and developed. Then, the insulating layer 43 is formed. At this time, the opening 43A is patterned in a region overlapping the mounting terminal 103 formed on the substrate 11 in plan view. In the present embodiment, the photosensitive resin layer is patterned so as to form an opening 43A that exposes a region corresponding to the mounting terminal 103. In this way, the insulating layer 43 is formed.

Next, as shown in FIG. 10, a color filter 50 is formed.
First, a photosensitive resin layer is formed by applying and drying a photosensitive resin containing a green color material, for example, by spin coating so as to cover the insulating layer 43. Subsequently, the photosensitive resin layer is exposed and developed to form a green (G) colored layer 50G as shown in FIG. In the present embodiment, the thickness of the colored layer 50G is set to a range of 1.0 μm to 2.0 μm so as to obtain appropriate optical characteristics. Further, although not shown, for red and blue as well, a photosensitive resin containing a color material of each color is applied and exposed and developed to form colored layers 50R and 50B as shown in FIG. That is, it is necessary to perform coating to exposure development processing for the number of times corresponding to the number of colors of the color filter to be used.

<Sealing substrate bonding step S6>
As shown in FIG. 10, the filler 42 is applied so as to cover the colored layer 50G (50). For the filler 42, a thermosetting epoxy resin is used in consideration of the transmission of light emitted from the organic EL element 30 and the adhesiveness between the color filter 50 and the sealing substrate 70. In addition, the same effect can be obtained by using resin materials such as urethane, acrylic, and polyolefin. Since the unevenness of the structure such as the organic EL element 30 is reduced by the effect of the buffer film 34b, the filler 42 can be applied on the surface of the color filter 50 or the second sealing film 34c with good fluidity. it can. The final filler 42 has a thickness of about 10 to 100 μm.

  As shown in FIG. 10, as shown in FIG. 10, the sealing substrate 70 is disposed at a predetermined position facing the base material 11 to which the filler 42 is applied, for example, by vacuum suction or the like. Quartz glass is used for the sealing substrate 70 in consideration of the light transmittance and handling properties and the influence of reaction products in the subsequent sealing film etching process. The thickness of the sealing substrate 70 is preferably 0.5 mm to 1.2 mm. In the present embodiment, a 0.7 mm substrate is used.

  The sealing substrate 70 disposed opposite to the sealing substrate 70 is pressurized with a predetermined pressing pressure, and is sandwiched between the base material 11 and the sealing substrate 70 to spread the filler 42 not yet solidified evenly in a plan view. . At this time, there is a concern that the filler 42 protrudes from the end portion (boundary surface with the terminal region E2) of the sealing substrate 70, covers the terminal region E2, and covers the mounting terminals 103. Therefore, it is preferable to manage so that the filler 42 does not protrude into the terminal region E2 by adjusting the coating amount of the filler 42, the flat area of the sealing substrate 70, and the degree of pressurization. Incidentally, if bubbles remain in the filler 42, it may cause a display failure. Therefore, it is more preferable to perform the pressing operation under a vacuum (below atmospheric pressure) atmosphere.

  After the above operation, the filler 42 is solidified at a temperature and time that are the curing conditions for the filler 42, and the element substrate 10 and the sealing substrate 70 are bonded. In addition, since the filler 42 is extended planarly by pressurizing the sealing substrate 70, it is not particularly required to apply the filler 42 to the entire display region E1 in the previous step.

<Mounting terminal opening process S7>
As shown in FIG. 10, using the insulating layer 43 as a mask, the first sealing film 34a and the second sealing film 34c in the opening 43A are removed by etching, and the first sealing film 34a and the second sealing film are removed. An opening hole 35A penetrating the film thickness 34c is formed. In this manner, as shown in FIG. 11, the opening hole 35A that exposes the mounting terminal 103 (mounting terminal surface layer 84) is formed.

Method of etching first sealing film 34a and second sealing film 34c made of an inorganic film such as silicon oxide film (SiO), silicon nitride film (Si _X N _Y ), and silicon oxynitride film (SiO _X N _Y ) And dry etching using a fluorine-based processing gas such as CHF ₃ (methane trifluoride), CF ₄ (carbon tetrafluoride), NF ₃ (nitrogen trifluoride), SF ₆ (sulfur hexafluoride), etc. It is done.

  Dry etching is performed by applying a high-frequency voltage under a predetermined gas flow rate and chamber pressure. By irradiating the sealing film (34a, 34c), the sealing substrate 70, etc. with plasma particles according to the gas type, the plasma particles and the sealing films (34a, 34c), which are irradiated objects, are chemically treated. The object to be irradiated is scraped off by generating a volatile substance by reacting.

In the terminal region E2, the first sealing film 34a and the second sealing film 34c overlap. Both of the sealing films (34a, 34c) are either a silicon oxide film (SiO), a silicon nitride film (Si _X N _Y ), or a silicon oxynitride film (SiO _X N _Y ), and Si or SiO Is the main component. Therefore, the first sealing film 34a and the second sealing film 34c can be removed together with the same kind of etching gas.

  As described above, aluminum (Al) or indium tin oxide (ITO) is used for the mounting terminal 103. Therefore, after the sealing films (34a, 34c) covering the mounting terminals 103 are selectively removed, the mounting terminals 103 themselves become good etching stop materials, and the mounting terminals 103 are protected against the sealing film etching process. The

  Next, ashing is performed using the sealing substrate 70 as a mask to remove all the insulating layer 43 present in the terminal region E2.

<External connection substrate bonding step S8>
Next, as illustrated in FIG. 12, the external connection substrate 104 is bonded and fixed to the terminal region E <b> 2 of the element substrate 10 through the anisotropic conductive adhesive 106. Thereby, the mounting terminal 103 on the element substrate 10 side and the connection terminal 105 of the external connection substrate 104 are electrically connected via the anisotropic conductive adhesive 106 in the opening hole 35A. In this way, the organic EL device 100 is completed.

According to the organic EL device 100 of the present embodiment, since the surface of the inspection terminal 66 is covered with the first sealing film 34a and the second sealing film 34c in the finished product state, the inspection terminal 66 has an inspection probe. Even when the surface of the inspection terminal 66 is scraped and cracked or the like occurs when the contact 13 is brought into contact, film debris generated due to these can remain on the surface of the inspection terminal 66. Thereby, scattering of the film on the surface of the inspection terminal 66 can be suppressed.
Therefore, for example, it is possible to prevent a short circuit from occurring between the inspection terminal 66 and the other terminals due to film debris scattered on the substrate, and thus a drive circuit for driving the organic EL element 30 It is possible to suppress the occurrence of a defect such as a malfunction in the operation.

  In this embodiment, the inspection terminal 66 is formed in a layer different from the mounting terminal surface layer 84 of the mounting terminal 103. That is, by using the second wiring layer 82 lower than the mounting terminal surface layer 84 constituting the mounting terminal 103 as the inspection terminal 66, the first sealing film 34a and the second sealing film for sealing the organic EL element 30 are used. The surface of the inspection terminal 66 can be covered with the stop film 34c. Thereby, it is possible to insulate the inspection terminal 66 without increasing the number of manufacturing steps. Further, since the inspection terminal 66 is formed by using the wiring layer constituting the mounting terminal 103, it is not necessary to separately provide the inspection terminal.

[Electronics]
Next, an embodiment of an electronic device according to the present invention will be described.
FIG. 13 is a schematic diagram showing a head mounted display (HMD) as an electronic apparatus.
As illustrated in FIG. 13, a head mounted display (electronic device) 1000 as an electronic device according to the present embodiment includes two display units 1001 provided corresponding to the left and right eyes. The observer M can see characters and images displayed on the display unit 1001 by wearing the head mounted display 1000 on the head like glasses. For example, if an image in consideration of parallax is displayed on the left and right display units 1001, a stereoscopic video can be viewed and enjoyed.

  The display unit 1001 includes the organic EL device 100 of the above embodiment. Therefore, since it has excellent display quality and high productivity, it is possible to provide a head mount display 1000 that is excellent in cost performance and small and lightweight.

  The head mounted display 1000 is not limited to having the two display units 1001, and may be configured to include one display unit 1001 corresponding to either the left or right.

  The electronic device on which the organic EL device 100 is mounted is not limited to the head mounted display 1000. For example, an electronic device having a display unit such as a personal computer, a portable information terminal, a navigator, a viewer, or a head-up display can be given.

  The preferred embodiments according to the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the technical idea described in the claims. It is understood that it belongs to.

(Modification)
For example, in the above embodiment, the organic EL device 100 using the color filter 50 for expressing the colors of red (R), green (G), and blue (B) has been described, but the present invention is not limited to this. For example, a RGB color separation method using an organic EL element 30 that emits light of three primary colors (R, G, B), red (R), green (G) from blue (B) light emission through a phosphor color conversion layer. The present invention can be applied to an organic EL device having various other color expression methods such as a color conversion method for obtaining light emission.

  The preferred embodiments according to the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the technical idea described in the claims. It is understood that it belongs to.

  DESCRIPTION OF SYMBOLS 10 ... Element substrate, 30B ... Organic EL element (light emitting element), 34a ... 1st sealing film (sealing film), 34c ... 2nd sealing film (sealing film), 66 ... Inspection terminal, 81-84 ... Wiring layer, 100 ... organic EL device (electro-optical device), 101 ... data line driving circuit (transistor circuit), 102 ... scanning line driving circuit (transistor circuit), 103 ... mounting terminal, 121, 122, 123, 124, 125 , T ... transistor, 1000 ... head mounted display (electronic device), E1 ... display region, E2 ... terminal region, S7 ... sealing film forming step

Claims (4)

An element substrate including a display area in which a plurality of light emitting elements are arranged in a matrix and a terminal area in which a plurality of mounting terminals are arranged outside the display area;
The element substrate is
A transistor circuit for driving the plurality of light emitting elements;
An inspection terminal for inspecting the transistor circuit;
A sealing film for sealing the plurality of light emitting elements,
An electro-optical device, wherein a surface of the inspection terminal is covered with the sealing film.   The electro-optical device according to claim 1, wherein the inspection terminal exists between the mounting terminal and the transistor circuit. The mounting terminal is constituted by a plurality of laminated wiring layers,
The electro-optical device according to claim 1, wherein the inspection terminal is configured by the wiring layer that is lower than the uppermost wiring layer that configures the mounting terminal.   An electronic apparatus comprising the electro-optical device according to claim 1.

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