JP6665885B2 - Electro-optical device, method of manufacturing the same, and electronic equipment - Google Patents

Description

  The present invention relates to an electro-optical device, a method for manufacturing the same, and an electronic apparatus.

  As an example of an electro-optical device, an organic EL device has been proposed in which pixels using an organic electroluminescence (EL) element are arranged in a matrix in a display region of an element substrate (for example, see Patent Document 1). .).

  Specifically, Patent Document 1 discloses an organic EL device having a top emission structure including an organic EL element in which a reflective layer, a first electrode (pixel electrode), a light emitting layer, and a second electrode (a counter electrode) are sequentially stacked. Is disclosed.

Japanese Patent Application Laid-Open No. 2010-198754

  By the way, in the organic EL device described in Patent Literature 1, a plurality of terminals including a mounting terminal for mounting a data line driving circuit, a scanning line driving circuit, and the like, an external connection terminal, and the like are provided in a peripheral region outside a display region. Are arranged. These terminals are made of a reflective conductive material such as aluminum (Al) formed in the same process as the above-described reflective layer, and indium tin oxide (ITO) formed in the same process as the first electrode. And a transparent conductive material such as a transparent conductive material.

  However, when the reflective conductive material and the transparent conductive material described above are directly laminated, the contact resistance at the terminal becomes extremely high. Further, electrolytic corrosion may occur between the reflective conductive material and the transparent conductive material. As a countermeasure, it is conceivable to manufacture the terminals by another process, but the manufacturing cost increases due to an increase in the number of steps.

  On the other hand, Patent Literature 1 discloses a terminal in which ITO is stacked on a wiring layer in which titanium (or titanium nitride), aluminum, and titanium (or titanium nitride) are stacked. However, when the same material as the wiring layer is used for the reflective layer, the reflectivity of the reflective layer may be reduced.

  One aspect of the present invention has been proposed in view of such a conventional situation, and has made it possible to reduce the terminal resistance while preventing the reflectance of the reflective electrode from decreasing. It is an object to provide an apparatus, a method for manufacturing the same, and an electronic apparatus including such an electro-optical device.

Electro-optical device according to one embodiment of the present invention includes a display region in which a plurality of light emitting elements are arranged in a matrix, and a peripheral area where the terminal on the outside of the display region is disposed, the device substrate including, The light emitting element includes a reflective electrode , an insulating layer covering the reflective electrode, an optical path adjustment layer, a first electrode, a pixel separation layer, a light emitting layer, and a second electrode, which are stacked. One electrode is electrically connected to a contact electrode; the terminal is a first terminal layer formed of the same first conductive film as the reflective electrode; and a second terminal layer is the same as the contact electrode. And a third terminal layer formed of the same third conductive film as that of the first electrode. Has an opening for exposing a portion of the first electrode, and Ntakuto electrode is not overlapped with the opening, in the area between the two said adjacent openings in plan view, Ri part and heavy Do each other of the contact electrode and the end portion of the optical path adjusting layer, A contact hole penetrating the insulating layer is provided in a region that does not overlap with the opening in plan view, and the contact electrode is electrically connected to the reflection electrode via the contact hole, and one of the contact electrodes The optical path adjustment layer is provided on the surface of the part, and a part where the optical path adjustment layer is not provided is provided on another part of the surface of the contact electrode, and the first electrode is provided on the part Are electrically connected to the contact electrodes .

  According to this configuration, in the terminal, the first terminal layer formed of the same first conductive film as the reflective electrode and the third terminal layer formed of the same third conductive film as the first electrode are used. By providing a second terminal layer formed of the same second conductive film as the contact electrode between them, the resistance value of the terminal can be reduced while preventing the reflectance of the reflective electrode from decreasing. is there.

  In the electro-optical device, the third conductive film includes a transparent conductive material, the second conductive film includes a conductive material having higher conductivity than the third conductive film, and the first conductive film includes And a reflective conductive material.

  According to this structure, a conductive material having higher conductivity than the third conductive film is provided between the first conductive film including the reflective conductive material and the third conductive film including the transparent conductive material in the terminal. With the provision of the second conductive film including the reflective conductive material and the transparent conductive material, the resistance of the terminal can be reduced as compared with the case where the reflective conductive material and the transparent conductive material are directly stacked. Further, since the reflective electrode is formed of the first conductive film containing a reflective conductive material, it is possible to prevent the reflectance of the reflective electrode from being reduced.

  In the above electro-optical device, the third conductive film contains indium tin oxide, the second conductive film contains titanium nitride, and the first conductive film contains aluminum and copper. Good.

  According to this structure, in the terminal, the second conductive film containing titanium nitride is provided between the first conductive film containing aluminum and copper and the third conductive film containing indium tin oxide, It is possible to reduce the resistance value of the terminal. Further, since the reflective electrode is formed of the first conductive film containing aluminum and copper, it is possible to prevent the reflectance of the reflective electrode from decreasing.

  In the electro-optical device, the first electrode is electrically connected to the reflective electrode through the contact electrode, and the reflective electrode is divided for each pixel, and includes a transistor for driving a light-emitting element. An electrically connected configuration may be used.

  According to this configuration, the transistor and the first electrode are electrically connected via the reflective electrode, so that the reflective electrode and the first electrode have the same potential. Accordingly, a highly reliable light-emitting operation of the light-emitting element can be performed while controlling a potential applied from the transistor to the first electrode through the reflective electrode. According to this configuration, it is possible to further improve the yield.

  In the electro-optical device, the reflective electrode is formed by a part of a power supply line, and a relay electrode electrically connected to a transistor for driving a light emitting element is arranged inside an opening formed in the reflective electrode. The first electrode may be configured to be electrically connected to the relay electrode via the contact electrode.

  According to this configuration, it is possible to improve display quality by blocking the light incident from the opening with the contact electrode.

  According to another aspect of the invention, an electronic apparatus includes any one of the above-described electro-optical devices.

  According to this configuration, it is possible to provide an electronic apparatus including an electro-optical device capable of lowering the resistance value of the terminal while preventing the reflectance of the reflective electrode from lowering.

Further, a method of manufacturing an electro-optical device according to one aspect of the present invention includes a display region in which a plurality of light emitting elements are arranged in a matrix, and a peripheral area where the terminal on the outside of the display area is arranged, the The light emitting element, a reflective electrode , an insulating layer covering the reflective electrode, an optical path adjustment layer, a first electrode, a pixel separation layer, a light emitting layer, and a second electrode are stacked, The terminal has a structure in which a first electrode is electrically connected to a contact electrode, and the terminal has a structure in which a first terminal layer, a second terminal layer, and a third terminal layer are stacked. The pixel separation layer has an opening that exposes a part of the first electrode, and the contact electrode does not overlap with the opening in plan view, and two adjacent electrodes in plan view. In a region between the openings, an end of the optical path adjustment layer and a part of the contact electrode Ri but heavy Do one another, in a region which does not overlap with the opening in a plan view, the insulating layer contact hole penetrating is provided, said contact electrode is electrically connected to the reflective electrode through the contact hole An optical path adjusting layer provided on a part of the surface of the contact electrode, and a part where the optical path adjusting layer is not provided on another part of the surface of the contact electrode; The method of manufacturing an electro-optical device , wherein the electrode is electrically connected to a contact electrode at the portion, wherein the first conductive film is formed, and the first conductive film is patterned to form the display. Forming the reflective electrode in a region, forming the first terminal layer in the peripheral region, forming a second conductive film, and patterning the second conductive film, Forming the contact electrode in a region, laminating the second terminal layer on the first terminal layer in the peripheral region, forming a third conductive film, and forming the third conductive film Forming the first electrode in the display region by patterning, and laminating the third terminal layer on the second terminal layer in the peripheral region.

  According to this method, the first terminal layer has the same first conductive film as the reflective electrode, the second terminal layer has the same second conductive film as the contact electrode, and the third terminal layer has the first electrode. Forming a terminal in which a first terminal layer, a second terminal layer, and a third terminal layer are stacked in a process of manufacturing a light-emitting element by using the same third conductive film as that of the first embodiment. Is possible. In addition, it is possible to reduce the resistance value of the terminal while preventing the reflectance of the reflective electrode from decreasing.

  In the method for manufacturing an electro-optical device, the third conductive film includes a transparent conductive material, the second conductive film includes a conductive material having higher conductivity than the third conductive film, The conductive film may be a method including a reflective conductive material.

  According to this method, in a terminal to be manufactured, a higher conductivity than the third conductive film is provided between the first conductive film including the reflective conductive material and the third conductive film including the transparent conductive material. By forming the second conductive film including a conductive material, the resistance value of the terminal can be lower than in the case where the reflective conductive material and the transparent conductive material are directly stacked. Further, since the reflective electrode is formed of the first conductive film containing a reflective conductive material, it is possible to prevent the reflectance of the reflective electrode from being reduced.

  In the method for manufacturing an electro-optical device, the third conductive film includes indium tin oxide, the second conductive film includes titanium nitride, and the first conductive film includes aluminum and copper. It may be.

  According to this method, a second conductive film containing titanium nitride is formed between the first conductive film containing aluminum and copper and the third conductive film containing indium tin oxide in a terminal to be manufactured. By doing so, it is possible to reduce the resistance value of the terminal. Further, since the reflective electrode is formed of the first conductive film containing aluminum and copper, it is possible to prevent the reflectance of the reflective electrode from decreasing.

FIG. 1 is a plan view illustrating a configuration of an organic EL device according to an embodiment of the present invention. FIG. 2 is a circuit diagram illustrating a configuration of an element substrate included in the organic EL device illustrated in FIG. 1. FIG. 2 is a circuit diagram illustrating a configuration of a pixel circuit included in the organic EL device illustrated in FIG. 1. FIG. 2 is a plan view illustrating a configuration of a pixel included in the organic EL device illustrated in FIG. 1. FIG. 5A is a cross-sectional view taken along line A′A ′ shown in FIG. 4, and FIG. 5B is an enlarged cross-sectional view of some pixels shown in FIG. 4A is a sectional view taken along line B─B ′ shown in FIG. 4, FIG. 4B is a sectional view taken along line C─C ′ shown in FIG. 4, and FIG. 4C is a sectional view taken along line D─D ′ shown in FIG. FIG. FIG. 2 is a cross-sectional view between a display area and a peripheral area of the organic EL device shown in FIG. 1. (A) is a plan view showing a configuration of a terminal, and (b) is a sectional view taken along line E-E 'shown in (a). FIG. 2 is a cross-sectional view for explaining a manufacturing process of the organic EL device shown in FIG. 1. FIG. 6 is a plan view illustrating another configuration example of a pixel included in the organic EL device according to an embodiment of the present invention. FIG. 11 is a sectional view taken along line E′E ′ shown in FIG. 10. It is a schematic diagram showing an example of electronic equipment provided with an organic EL device.

(Organic EL device)
First, an organic EL device 100 shown in FIG. 1 will be described as one embodiment of the present invention.
The organic EL device 100 is a self-luminous display device shown as an example of the “electro-optical device” in the present invention. FIG. 1 is a plan view schematically showing the configuration of the organic EL device 100.

  The organic EL device 100 has an element substrate 10 and a protection substrate 70 as shown in FIG. The element substrate 10 and the protection substrate 70 are joined to each other by an adhesive (not shown) in a state of facing each other. Note that, for example, an epoxy resin or an acrylic resin can be used as the adhesive.

  The element substrate 10 includes, as light emitting elements, a pixel 20B on which an organic EL element 30B emitting blue (B) light is arranged, a pixel 20G on which an organic EL element 30G emitting green (G) light is arranged, and a red ( The pixel 20R in which the organic EL element 30R that emits light R) is disposed has a display region E in which the pixels 20R are arranged in a matrix.

  In the organic EL device 100, the pixel 20B, the pixel 20G, and the pixel 20R serve as a display unit to provide a full-color display. In the following description, the pixel 20B, the pixel 20G, and the pixel 20R may be collectively treated as the pixel 20, and the organic EL element 30B, the organic EL element 30G, and the organic EL element 30R may be collectively treated as the organic EL element 30. There is.

  In the display area E, a color filter layer 50 is provided. In the color filter layer 50, a blue color filter layer 50B is disposed on the organic EL element 30B of the pixel 20B, and a green color filter layer 50G is disposed on the organic EL element 30G of the pixel 20G. The red color filter layer 50R is disposed on the organic EL element 30R of the pixel 20R.

In the present embodiment, the pixels 20 that emit light of the same color are arranged in the Y direction (first direction), and the pixels 20 that emit light of different colors intersect (perpendicularly) with the Y direction. 2 direction). Therefore, the arrangement of the pixels 20 is of a so-called stripe type.
The organic EL element 30B, the organic EL element 30G, and the organic EL element 30R are respectively arranged in a stripe shape according to the pixel arrangement, and the blue color filter layer 50B, the green color filter layer 50G, the red color filter The layer 50R is also arranged in a stripe shape. Note that the arrangement of the pixels 20 is not limited to the stripe method, and may be a mosaic method or a delta method.

  The organic EL device 100 has a top emission structure. Therefore, light emitted from the organic EL element 30 passes through the color filter layer 50 of the element substrate 10 and is emitted as display light from the protective substrate 70 side.

  Since the organic EL device 100 has a top emission structure, an opaque ceramic substrate, a semiconductor substrate, or the like can be used as the base of the element substrate 10 in addition to a transparent quartz substrate, a glass substrate, or the like. In the present embodiment, a silicon substrate (semiconductor substrate) is used as a base material of the element substrate 10.

  Outside the display area E, a peripheral area F in which the external connection terminals 103 are arranged is provided. In the peripheral area F, a plurality of external connection terminals 103 are arranged along one long side of the element substrate 10. A data line driving circuit 101 is provided between the plurality of external connection terminals 103 and the display area E. Further, a scanning line driving circuit 102 is provided between the two short sides of the element substrate 10 and the display area E. In the following description, the direction along the long side of the element substrate 10 is defined as the X direction, the direction along the short side of the element substrate 10 is defined as the Y direction, and the direction from the protection substrate 70 toward the element substrate 10 is defined as Z ( +) Direction.

  The protection substrate 70 is smaller than the element substrate 10 and is arranged to face the element substrate 10 so that the external connection terminals 103 are exposed. The protection substrate 70 is a light-transmitting substrate, and a quartz substrate, a glass substrate, or the like can be used. The protection substrate 70 has a role of protecting the organic EL elements 30 arranged in the display area E from being damaged, and is provided wider than the display area E.

  FIG. 2 is a circuit diagram showing a configuration of the element substrate 10. As shown in FIG. 2, on the element substrate 10, m rows of scanning lines 12 are provided extending in the X direction, and n columns of data lines 14 are provided extending in the Y direction. The element substrate 10 is provided with a power supply line 19 extending in the Y direction for each column along the data line 14.

  Pixel circuits 110 are provided on the element substrate 10 corresponding to intersections of the m rows of scanning lines 12 and the n columns of data lines 14. The pixel circuit 110 forms a part of the pixel 20. In the display region E, m rows × n columns of pixel circuits 110 are arranged in a matrix.

  A reset potential Vorst for initialization is supplied (supplied) to the power supply line 19. Although not shown, three control lines for supplying control signals Gcmp, Gel, and Gorst are provided in parallel with the scanning lines 12.

  The scanning line 12 is electrically connected to the scanning line driving circuit 102. The data line 14 is electrically connected to the data line driving circuit 101. The scanning line driving circuit 102 is supplied with a control signal Ctr1 for controlling the scanning line driving circuit 102. The data line driving circuit 101 is supplied with a control signal Ctr2 for controlling the data line driving circuit 101.

  The scanning line driving circuit 102 scans the scanning lines 12 row by row over the period of the frame, and the scanning signals Gwr (1), Gwr (2), Gwr (3),..., Gwr (m−1), Gwr (M) is generated according to the control signal Ctr1. Further, the scanning line driving circuit 102 supplies control signals Gcmp, Gel, and Gorst to the control line in addition to the scanning signal Gwr. Note that the frame period is a period during which an image for one cut (frame) is displayed on the organic EL device 100. For example, if the frequency of the vertical synchronization signal included in the synchronization signal is 120 Hz, one frame period Is about 8.3 milliseconds.

  The data line driving circuit 101 supplies data signals Vd (1), Vd (2) of potentials corresponding to the gradation data of the pixel circuit 110 to the pixel circuits 110 located in the row selected by the scanning line driving circuit 102. , Vd (n) are supplied to the data lines 14 of the first, second, ..., nth columns.

  FIG. 3 is a circuit diagram showing a configuration of the pixel circuit 110. As shown in FIG. 3, the pixel circuit 110 includes P-channel MOS transistors 121, 122, 123, 124, and 125, an organic EL element 30, and a capacitor 21. The above-described scanning signal Gwr, control signals Gcmp, Gel, Gorst, and the like are supplied to the pixel circuit 110.

  The organic EL element 30 has a structure in which a light emitting functional layer (light emitting layer) 32 is sandwiched between a pixel electrode (first electrode) 31 and a counter electrode (second electrode) 33 facing each other.

  The pixel electrode 31 is an anode that supplies holes to the light emitting function layer 32, and is formed of a light-transmissive conductive material. In the present embodiment, for example, an ITO (Indium Tin Oxide) film having a thickness of 200 nm is formed as the pixel electrode 31. The pixel electrode 31 is electrically connected to one of a drain of the transistor 124 and a source or a drain of the transistor 125.

  The counter electrode 33 is a cathode that supplies electrons to the light emitting function layer 32, and is formed of a conductive material having light transmissivity and light reflectivity, such as an alloy of magnesium (Mg) and silver (Ag). . The counter electrode 33 is a common electrode provided across the plurality of pixels 20 and is electrically connected to the power supply line 8. The power supply line 8 is supplied with a potential Vct which is a lower side of the power supply in the pixel circuit 110.

  The light emitting functional layer 32 has a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and the like, which are sequentially stacked from the pixel electrode 31 side. In the organic EL element 30, the holes supplied from the pixel electrodes 31 and the electrons supplied from the counter electrode 33 are combined in the light emitting function layer 32, so that the light emitting function layer 32 emits light.

  The power supply line 6 is provided on the element substrate 10 so as to extend in the X direction so as to cross each power supply line 19. The power supply line 6 may be provided to extend in the Y direction, or may be provided to extend in both the X direction and the Y direction. The transistor 121 has a source electrically connected to the power supply line 6 and a drain electrically connected to the other of the source and the drain of the transistor 123 and the source of the transistor 124. The power supply line 6 is supplied with a potential Vel that is a higher side of the power supply in the pixel circuit 110. One end of a capacitor 21 is electrically connected to the power supply line 6. The transistor 121 functions as a driving transistor that passes current according to a voltage between the gate and the source of the transistor 121.

The transistor 122 has a gate electrically connected to the scan line 12 and one of a source and a drain electrically connected to the data line 14. The other of the source and the drain of the transistor 122 is electrically connected to the gate of the transistor 121, the other end of the capacitor 21, and one of the source and the drain of the transistor 123, respectively.
The transistor 122 is electrically connected between the gate of the transistor 121 and the data line 14, and functions as a writing transistor that controls an electrical connection between the gate of the transistor 121 and the data line 14.

  The transistor 123 has a gate electrically connected to the control line, and is supplied with a control signal Gcmp. The transistor 123 functions as a threshold compensation transistor that controls an electrical connection between the gate and the drain of the transistor 121.

  The transistor 124 has a gate electrically connected to the control line, and is supplied with a control signal Gel. The drain of the transistor 124 is electrically connected to one of the source and the drain of the transistor 125 and the pixel electrode 31 of the organic EL element 30. The transistor 124 functions as a light emission control transistor that controls an electrical connection between the drain of the transistor 121 and the pixel electrode 31 of the organic EL element 30.

  The transistor 125 has a gate electrically connected to the control line, and is supplied with a control signal Gorst. The other of the source and the drain of the transistor 125 is electrically connected to the power supply line 19 and supplied with a reset potential Vorst. The transistor 125 functions as an initialization transistor that controls an electrical connection between the power supply line 19 and the pixel electrode 31 of the organic EL element 30.

  FIG. 4 is a plan view illustrating a configuration of the pixel 20 (pixels 20B, 20G, and 20R). FIG. 5A is a cross-sectional view of the pixels 20B, 20G, and 20R taken along the line A′A ′ shown in FIG. 4 along the X direction. FIG. 5B is an enlarged cross-sectional view of some of the pixels 20R shown in FIG. FIG. 6A is a cross-sectional view along the Y direction of the pixel 20 </ b> B along the line segment B′B ′ shown in FIG. 4. FIG. 6B is a cross-sectional view of the pixel 20 </ b> G along the Y direction by the line segment C′C ′ shown in FIG. 4. FIG. 6C is a cross-sectional view of the pixel 20 </ b> R along the Y direction along the line segment D′ D ′ shown in FIG. 4.

  Each of the pixels 20B, 20G, and 20R has a rectangular shape in plan view as shown in FIGS. 4 and 5A and 5B, and has a short direction in the X direction (a long direction in the Y direction). And are arranged in parallel. A pixel separation layer 29 is provided between the organic EL elements 30B, 30G, and 30R.

  The pixel separation layer 29 is made of an insulating material, and electrically insulates the adjacent organic EL elements 30B, 30G, and 30R. In the present embodiment, for example, a silicon oxide (SiO 2) film having a thickness of 25 nm is formed as the pixel separation layer 29. The pixel separation layer 29 is provided so as to cover the periphery of the pixel electrode 31 of each of the pixels 20B, 20G, and 20R. That is, the pixel separation layer 29 is provided with the opening 29CT that exposes a part of the pixel electrode 31 of each of the pixels 20B, 20G, and 20R. The opening 29CT has a rectangular shape in plan view, and defines a light emitting area of each pixel 20.

  The organic EL elements 30B, 30G, and 30R arranged in each of the pixels 20B, 20G, and 20R have an interlayer insulating layer (insulating) as shown in FIGS. 5A and 5B and FIGS. 6A to 6C. A resonant structure in which a reflective electrode 35, a reflective layer 36, a protective layer 37, an optical path adjusting layer 38, a pixel electrode 31, a light emitting function layer 32, and a counter electrode 33 are stacked on a layer 34. (Cavity structure). In FIGS. 4, 5A, 5B, and 6A to 6C, the illustration of the light emitting functional layer 32 and the counter electrode 33 is omitted.

  In the resonance structure, while the light emitted from the light emitting function layer 32 is repeatedly reflected between the reflection electrode 35 and the counter electrode 33, the optical path between the reflection electrode 35 and the counter electrode 33 adjusted by the optical path adjustment layer 38 is increased. It is possible to enhance and emit light of a specific wavelength (resonance wavelength) in accordance with the appropriate distance.

  An insulating material such as silicon oxide (SiO2) is used for the interlayer insulating layer 34, for example. Although only the transistor 124 is shown below the interlayer insulating layer 34 in FIG. 5A, the scanning line 12, the data line 14, the power supply The line 19, the control line, the power supply line 6, the transistors 121, 122, 123, 124, 125 constituting the pixel circuit 110, the capacitor 21 and the like are arranged. Irregularities may be formed on the surface of the interlayer insulating layer 34 according to these transistors and wirings, but it is preferable that the surface on which the reflective electrode 35 is formed be planarized.

  The reflection electrode 35 is divided and arranged for each pixel 20. That is, the reflection electrode 35 is provided in each of the pixels 20B, 20G, and 20R. In addition, a gap 35CT is formed between the adjacent reflective electrodes 35. Therefore, a gap 35CT is provided between the adjacent reflective electrodes 35, and is electrically separated for each pixel 20 so that different potentials can be applied.

  The reflective electrode 35 is made of a conductive material having light reflectivity, and is formed in a rectangular shape in plan view. The reflection electrode 35 is larger than the pixel electrode 31 and defines a reflection area of each pixel 20. In the present embodiment, as the reflective electrode 35, for example, a 100 nm-thick aluminum (Al) and copper (Cu) having a thickness of 100 nm to be the second layer 35b are formed on a titanium (Ti) film having a thickness of 30 nm to be the first layer 35a. (AlCu) film is formed.

  The reflective electrode 35 is electrically connected to the drain of the transistor 124 via the first contact electrode 28 (see FIGS. 3 and 5A) disposed through the interlayer insulating layer 34. Have been. The reflection electrode 35 is electrically connected to one of the source and the drain (not shown) of the transistor 125 via the first contact electrode 28. For the first contact electrode 28, for example, a conductive material such as tungsten (W), titanium (Ti), or titanium nitride (TiN) can be used. In the present embodiment, the first layer 35a of the reflection electrode 35 is connected to the first contact electrode 28.

  The reflection-enhancing layer 36 is for enhancing the reflection characteristics of the reflection electrode 35, and is made of, for example, an insulating material having light transmittance. The reflection enhancing layer 36 is disposed so as to cover the surface of the reflection electrode 35. In the present embodiment, a silicon oxide (SiO 2) film having a thickness of, for example, 40 nm is formed as the reflection enhancing layer 36.

  The protective layer 37 is provided so as to cover the surface of the reflective electrode 35 where the gap 35CT is formed. The protective layer 37 has a first insulating film 39 and a buried insulating film 40. The first insulating film 39 is provided on the surfaces of the reflection-enhancing layer 36, the reflection electrode 35, and the interlayer insulating layer 34, and is formed along the gap 35CT. Therefore, the first insulating film 39 has a concave portion 39a corresponding to the gap 35CT. The buried insulating film 40 is formed so as to fill the recess 39a. The surface of the protective layer 37 that is in contact with the optical path adjustment layer 38 is planarized by the buried insulating film buried in the concave portion 37a. In the present embodiment, for example, a silicon nitride (SiN) film having a thickness of 80 nm is formed as the first insulating film 39, and a silicon oxide (SiO 2) film is formed as the buried insulating film 40.

  The optical path adjusting layer 38 has insulating films 38a and 38b disposed on the surface of the protective layer 37. The optical path adjustment layer 38 adjusts the optical path according to the optical distance between the reflective electrode 35 and the counter electrode 33 for each of the pixels 20B, 20G, and 20R.

Specifically, the thickness of the optical path adjustment layer 38 increases in the order of the pixel 20B, the pixel 20G, and the pixel 20R. That is, in the pixel 20B, as shown in FIG. 6A, the insulating films 38a and 38b are omitted so that, for example, the resonance wavelength (the peak wavelength at which the luminance becomes maximum) is 470 nm. In the pixel 20G, as shown in FIG. 6B, an insulating film 38a is provided so that, for example, the resonance wavelength becomes 540 nm. In the pixel 20R, as shown in FIG. 6C, for example, the insulating films 38a and 38b are provided so that the resonance wavelength becomes 610 nm.
In the present embodiment, for example, silicon oxide (SiO2) having a thickness of 40 nm is formed as the insulating film 38a, and silicon oxide (SiO2) having a thickness of, for example, 50 nm is formed as the insulating film 38b. Further, the reflective layer 36 and the protective layer 37 also adjust the optical path according to the optical distance between the reflective electrode 35 and the counter electrode 33. For example, in the pixel 20B, the reflective layer 36 and the protective layer 37 The film thickness is set so that, for example, the resonance wavelength (peak wavelength at which the luminance becomes maximum) is 470 nm.

  Accordingly, blue (B) light having a peak wavelength of 470 nm is emitted from the pixel 20B, green (G) light having a peak wavelength of 540 nm is emitted from the pixel 20G, and 610 nm is emitted from the pixel 20R. Red (R) light having a wavelength is emitted. In the organic EL device 100, the color purity of the display light emitted from each pixel 20 is increased by the organic EL element 30 having such a resonance structure.

  The optical path adjustment layer 38 is provided between the organic EL elements 30B, 30G, and 30R. Specifically, the optical path adjustment layer 38 is made of the same material as the buried insulating film 40, and the optical path adjustment layer 38 is provided so as to cover the buried insulating film 40. According to such a configuration, the optical path adjustment layer 38 can be processed according to the resonance wavelength without deteriorating the flatness of the surface of the protective layer 37 on the pixel electrode 31 side. In the present embodiment, the optical path adjustment layer 38 and the buried insulating film 40 are made of silicon oxide (SiO2).

  As shown in FIGS. 5A and 5B and FIGS. 6A to 6C, the pixel electrode 31 is disposed on the optical path adjustment layer 38. The pixel electrode 31 is electrically connected to the reflection electrode 35 via the second contact electrode 41. Specifically, a contact hole 41CT is provided so as to penetrate the protective layer 37 and the reflection-enhancing layer 36. The contact hole 41CT is located below a region that does not overlap with the opening 29CT in plan view, that is, a region where the pixel isolation layer 29 is formed.

  The second contact electrode 41 has a first contact part 41a and a second contact part 41b. The first contact portion 41a is arranged in the contact hole 41CT and is connected to the second layer 35b of the reflection electrode 35. The second contact portion 41b is disposed on the surface of the protective layer 37 and is connected to the pixel electrode 31. In the present embodiment, for example, a titanium nitride (TiN) film is formed as the second contact electrode 41, and the second contact portion 41b is formed to have a thickness of 50 nm.

  As shown in FIGS. 5A and 5B and FIGS. 6A to 6C, a part of the optical path adjustment layer 38 is formed so as to overlap the second contact electrode 41. According to such a configuration, the second contact electrode 41 is arranged near the region between the organic EL elements 30B, 30G, and 30R without impairing the flatness of the surface of the protective layer 37 on the pixel electrode 31 side. can do. Thus, the area that does not contribute to light emission can be reduced, and the aperture ratio of each pixel 20 can be increased.

  As shown in FIG. 6A, in the pixel 20B, the insulating films 38a and 38b constituting the optical path adjusting layer 38 are provided in a part of the second contact electrode 41 or in a region overlapping with the buried insulating film 40. . The insulating films 38a and 38b forming the optical path adjusting layer 38 are not provided on a part of the surface of the second contact electrode 41, and the conductive material forming the pixel electrode 31 is not provided on the second contact electrode 41 at that portion. The conductive material that is stacked on the electrode 41 and forms the pixel electrode 31 is in contact with the second contact electrode 41.

  As shown in FIG. 6B, in the pixel 20G, the insulating film 38a constituting the optical path adjustment layer 38 is provided in a part of the second contact electrode 41 or in a region overlapping with the buried insulating film 40. Then, a contact hole is provided in the insulating film 38b, a conductive material forming the pixel electrode 31 is disposed in the contact hole, and the pixel electrode 31 is connected to the second contact electrode 41. In the pixel 20G, the insulating film 38b constituting the optical path adjustment layer 38 is provided on almost the entire surface except for the contact hole. More specifically, the insulating film 38a constituting the optical path adjusting layer 38 is provided in a region overlapping a part of the second contact electrode 41, the reflective electrode 35, or the buried insulating film 40.

  As shown in FIG. 6C, in the pixel 20 </ b> R, the insulating films 38 a and 38 b forming the optical path adjustment layer 38 are regions that overlap a part of the second contact electrode 41, the reflective electrode 35, or the buried insulating film 40. It is provided in. Then, contact holes are provided in the insulating films 38a and 38b, a conductive material forming the pixel electrode 31 is disposed in the contact hole, and the pixel electrode 31 is connected to the second contact electrode 41.

  Although not shown, the above-described light emitting functional layer 32 and the counter electrode 33 are disposed on the pixel electrode 31, and further cover the surface of the element substrate 10 and the organic EL element 30. By disposing a sealing layer (passivation film) for flattening the surface, penetration of moisture, oxygen, and the like into the organic EL element 30 is suppressed. The above-described color filter layer 50 is disposed on the surface of the sealing layer.

  Here, FIG. 7 is a cross-sectional view between the display region E and the peripheral region F of the organic EL device 100. FIG. 8A is a plan view showing the configuration of the external connection terminal 103, and FIG. 8B is a cross-sectional view taken along line E-E 'shown in FIG. 8A.

  In the organic EL device 100 of the present embodiment, as shown in FIGS. 7 and 8A and 8B, in the peripheral region F provided outside the display region E, the external connection terminal 103 is a reflective electrode. 35, a second terminal layer 410 formed of the same second conductive film 41LY as the contact electrode 41, and a first terminal layer 410 formed of the same second conductive film 41LY as the contact electrode 41. And a third terminal layer 310 formed of three conductive films 31LY.

  The first terminal layer 350 is formed in a rectangular shape in plan view on the surface of the interlayer insulating layer 34. The enhanced reflection layer 36 is disposed so as to cover an end of the first terminal layer 350. The first insulating film 39 of the protective layer 37 is formed such that the first insulating film 39 covers the surface of the interlayer insulating layer 34 on which the first terminal layer 350 and the reflection enhancing layer 36 are disposed. The buried insulating film 40 of the protective layer 37 is buried in a concave portion 39b formed in the first insulating film 39. With such a structure, the upper surface of the protective layer 37 on the second terminal layer 410 side is planarized.

  On the first terminal layer 350, a first contact hole 410CT that penetrates the reflective layer 36 and the protective layer 37 (first insulating film 39) is formed. The second terminal layer 410 is disposed on the surface of the protective layer 37 while being embedded in the first contact hole 410CT. Thus, the second terminal layer 410 is stacked on the surface of the first terminal layer 350 (first conductive film 35LY) exposed from the first contact hole 410CT.

  The optical path adjusting layer 38 is disposed so that the insulating films 38a and 38b cover the surface of the protective layer 37 on which the second terminal layer 410 is disposed. On the second terminal layer 410, a second contact hole 310CT penetrating the optical path adjustment layer 38 is formed. The third terminal layer 310T is disposed on the surface of the optical path adjustment layer 38 in a state of being embedded in the second contact hole 310CT. Thereby, the third terminal layer 310 is stacked on the surface of the second terminal layer 410 (the second conductive film 41LY) exposed from the second contact hole 310CT.

  The pixel separation layer 29 is disposed so as to cover the surface of the optical path adjustment 38 on which the second terminal layer 410 is disposed. The pixel separation layer 29 is provided with a terminal opening 290CT that exposes the external connection terminal 103 (third terminal layer 31).

  In the present embodiment, the first conductive film 35LY is made of an AlCu film, the second conductive film 41LY is made of a TiN film, and the third conductive film 31LY is made of an ITO film. That is, the second conductive film 41LY is made of a conductive material having higher conductivity than the third conductive film 31LY.

  In this case, in the external connection terminal 103, the second terminal layer 410 is disposed between the first terminal layer 350 (the first conductive film 35LY) and the third terminal layer 310 (the third conductive film 31LY). By providing the (second conductive film 41LY), the first terminal layer 350 (the first conductive film 35LY) and the third terminal layer 310 (the third conductive film 31LY) are directly stacked. Also, the resistance value of the external connection terminal 103 can be reduced. In addition, since the reflective electrode 35 is formed of the first conductive film 35LY, it is possible to prevent the reflectance of the reflective electrode 35 from decreasing.

  When manufacturing the organic EL device 100 of this embodiment, the first terminal layer 350 has the same first conductive film 35LY as the reflective electrode 35, and the second terminal layer 410 has the same second conductive film 35LY as the contact electrode 41. During the process of manufacturing the organic EL element 30 using the third conductive film 31LY and the same third conductive film 31LY as the pixel electrode 31 for the third terminal layer 310, the first terminal layer 350 It is possible to manufacture the external connection terminal 103 in which the terminal layer 410 and the third terminal layer 310 are sequentially stacked.

(Method of Manufacturing Organic EL Device)
Specifically, a method for manufacturing the organic EL device 100 according to the present embodiment will be described with reference to FIGS. 9A to 9F show a process of manufacturing the organic EL device 30 (30R is exemplified in this embodiment) and the external connection terminal 103 as a manufacturing process of the organic EL device 100. It is sectional drawing for demonstrating. 9A to 9F, one pixel 20 (20R is exemplified in the present embodiment) in the display area E is shown on the right side in FIGS. 9A to 9F. On the left side, one external connection terminal 103 in the peripheral area F is shown.

  In the present embodiment, during the process of manufacturing the organic EL element 30, the external connection terminal 103 in which the first terminal layer 350, the second terminal layer 410, and the third terminal layer 310 are sequentially stacked is formed. It can be made.

  Specifically, in the manufacturing method of the present embodiment, first, as shown in FIG. 9A, a Ti / AlCu film (first conductive film 35LY) and a SiO2 film ( After sequentially laminating the enhanced reflection layer 36), a mask layer (not shown) having a shape corresponding to the reflection electrode 35 and the first terminal layer 350 is formed thereon by using a photolithography technique. Then, after the Ti / AlCu film and the SiO2 film are etched until the surface of the interlayer insulating layer 34 is exposed, the mask layer is removed. Thus, the Ti / AlCu film and the SiO 2 film can be patterned into a shape corresponding to the reflective electrode 35 and the first terminal layer 350.

  Next, as shown in FIG. 9B, a SiN film (first insulating film 39) is formed thereon, and a SiO2 film (first insulating film 39) is formed in the concave portions 39a and 39b formed in the first insulating film 39. The buried insulating film 40) is buried. As a result, a protective layer 37 whose upper surface is flattened is formed.

Next, as shown in FIG. 9C, a contact hole 41CT is formed on the reflective electrode 35 and a first hole is formed on the first terminal layer 350 so as to penetrate the reflective layer 36 and the protective layer 37. A contact hole 410CT is formed. Thereafter, a TiN film (second conductive film 41YL) that covers the surface of the protective layer 37 is formed while being buried in the contact holes 41CT and 410CT. Thereafter, a mask layer (not shown) having a shape corresponding to the second contact electrode 41 and the second terminal layer 410 is formed thereon by using a photolithography technique. Then, after etching the TiN film until the surface of the protective layer 37 is exposed, the mask layer is removed.
Thereby, the TiN film can be patterned into a shape corresponding to the second contact electrode 41 and the second terminal layer 410.

  Next, as shown in FIG. 9D, an optical path adjusting layer 38 is formed by sequentially laminating insulating films 38a and 38b thereon. Thereafter, a contact hole 31CT is formed on the second contact electrode 41 and a second contact hole 310CT is formed on the second terminal layer 410 so as to penetrate the optical path adjustment layer 38.

  Next, as shown in FIG. 9E, an ITO film (third conductive film 31LY) that covers the surface of the optical path adjustment layer 38 is formed in a state of being buried in the contact holes 31CT and 310CT. Thereafter, a mask layer (not shown) having a shape corresponding to the pixel electrode 31 and the third terminal layer 310 is formed thereon by using a photolithography technique. Then, after etching the ITO film until the surface of the optical path adjusting layer 38 is exposed, the mask layer is removed. Thus, the ITO film can be patterned into a shape corresponding to the pixel electrode 31 and the third terminal layer 310. Then, after forming a SiO2 film (pixel separation layer 29), an opening 29CT is formed on the pixel electrode 31 and a terminal opening 290CT is formed on the third terminal layer 310.

  As described above, in the manufacturing method of this embodiment, the first terminal layer 350 has the first conductive film 35LY same as the reflective electrode 35, and the second terminal layer 410 has the second conductive film 35LY same as the second contact electrode 41. During the process of manufacturing the organic EL element 30 using the third conductive film 31LY and the same third conductive film 31LY as the pixel electrode 31 for the third terminal layer 310, the first terminal layer 350 It is possible to manufacture the external connection terminal 103 in which the terminal layer 410 and the third terminal layer 310 are sequentially stacked.

  Further, in the manufacturing method of the present embodiment, the second terminal layer 410 is provided between the first terminal layer 350 (the first conductive film 35LY) and the third terminal layer 310 (the third conductive film 31LY). By forming the (second conductive film 41LY), the first terminal layer 350 (the first conductive film 35LY) and the third terminal layer 310 (the third conductive film 31LY) are not directly stacked. Also, the resistance value of the external connection terminal 103 can be reduced. In addition, since the reflective electrode 35 is formed of the first conductive film 35LY, it is possible to prevent the reflectance of the reflective electrode 35 from decreasing.

  Further, in the organic EL device 100 of the present embodiment, the transistor 124 and the reflection electrode 35 are electrically connected via the above-described first contact electrode 28, and are connected to the reflection electrode 35 via the second contact electrode 41. The pixel electrode 31 is electrically connected. That is, the pixel electrode 31 is electrically connected to the transistor 124 via the reflective electrode 35.

  Thus, in the organic EL device 100 according to the present embodiment, unlike the case where a part of the power supply line forms the reflective electrode or the case where the power supply line and the reflective electrode are electrically connected, the reflective electrode 35 and the pixel electrode By electrically connecting the pixel electrode 31 and the pixel electrode 31, the reflective electrode 35 and the pixel electrode 31 have the same potential. As a result, a defect or the like occurs in the insulating film (the reflective layer 36, the protective layer 37, the optical path adjusting layer 38, etc.) between the reflective electrode 35 and the pixel electrode 31, and a short circuit occurs between the power supply line and the pixel electrode ( Since short-circuiting can be avoided, it is possible to further improve the yield.

  Further, in the organic EL device 100 of the present embodiment, with such a configuration, the light emission of the highly reliable organic EL element 30 is controlled while controlling the potential applied from the transistor 124 to the pixel electrode 31 via the reflective electrode 35. Actions can be taken.

  Further, in the organic EL device 100 of the present embodiment, the above-described contact electrode 41 is connected to the reflective electrode 35 in a state where the contact electrode 41 is embedded in the contact hole 41CT, and on the surface of the optical path adjusting layer 38. And a second contact portion 41b connected to the pixel electrode 31 in a state where the pixel electrode 31 is covered. In this case, it is possible to reliably connect the reflection electrode 35 and the pixel electrode 31 via the second contact electrode 41.

  Furthermore, in the organic EL device 100 of the present embodiment, at least a part of the end of the above-described optical path adjustment layer 38 is located on the surface of the second contact portion 41b, so that the optical path adjustment layer 38 has a predetermined shape. At the time of patterning, the second contact portion 41b can function as an etching stopper for the optical path adjustment layer 38, and the aperture ratio of each pixel 20 can be increased. In the external connection terminal 103, the second terminal layer 410 can function as an etching stopper for the optical path adjustment layer 38.

  Further, in the organic EL device 100 of the present embodiment, since the surface of the protective layer 37 on the side in contact with the optical path adjustment layer 38 is flattened, the thickness of the optical path adjustment layer 38 is adjusted for each pixel 20. Thereby, the optical path between the reflective electrode 35 and the pixel electrode 31 can be accurately adjusted. Thereby, it is possible to perform the light emitting operation of the organic EL element 30 having good color reproducibility by the above-described resonance structure. Further, in the external connection terminal 103, a step caused by the first terminal layer 350 and the like is flattened by the protective layer 37. Therefore, a region where the plurality of external connection terminals 103 are provided can be made flat, and connection with an external circuit can be reliably performed.

  In the organic EL device 100 according to the present embodiment, the optical path adjustment layer 38 disposed on the surface of the protective layer 37 is also flattened, so that the pixel electrode 31 disposed on the surface of the optical path adjustment layer 38 is formed. Can be located outside the position where the concave portion 39a is formed. Accordingly, it is possible to increase the aperture ratio of the pixel 20, that is, the opening area (light emitting area) of the opening 29CT that defines the light emitting region of the pixel 20 described above.

  Further, in the organic EL device 100 of the present embodiment, at least a part of the end of the optical path adjustment layer 38 (insulating films 38a and 38b) is arranged on the surface of the first insulating film 39 described above. I have. Of these, silicon oxide (SiO 2) is used for the optical path adjusting layers 38 (insulating films 38 a and 38 b) and the buried insulating film 40, and the first insulating film 39 has an etching rate higher than that of silicon oxide (SiO 2). Low silicon nitride (SiN) is used.

  In this case, silicon oxide can be selectively etched with respect to silicon nitride by, for example, dry etching using a fluorine-based gas. Therefore, when the optical path adjusting layer 38 is patterned into a predetermined shape, the first insulating film 39 can function as an etching stopper for the optical path adjusting layer 38 while protecting the buried insulating film 40.

(Modification)
Next, as a modified example of the organic EL device 100, an organic EL device 200 shown in FIGS. 10 and 11 will be described. FIG. 10 is a plan view showing the configuration of the pixel 20 (pixels 20B, 20G, and 20R). FIG. 11 is a cross-sectional view of the pixel 20G taken along a line E─E ′ shown in FIG. In the following description, portions that are the same as those of the organic EL device 100 will not be described, and will be denoted by the same reference numerals in the drawings.

  As shown in FIGS. 10 and 11, the organic EL device 200 includes a reflective electrode 60 constituted by a part of the power supply line 6 instead of the reflective electrode 35 divided for each pixel 20. I have. That is, the reflective electrode 60 is arranged in common for each of the pixels 20B, 20G, and 20R.

  Further, as shown in FIG. 3, the source of the transistor 121 and one end of the capacitor 21 are connected to the power supply line 6. Therefore, the reflective electrode 60 plays a role of reflecting the light from the light emitting function layer 32 side and supplying the potential Vel on the higher side of the power supply to the pixel circuit 110. Similarly to the first contact electrode 28, the interlayer insulating layer (insulating layer) 34 includes a contact electrode.

  In addition, the organic EL device 200 includes a relay electrode 61 that is electrically connected to the first contact electrode 28. Each pixel 20 is formed with a rectangular opening 60CT in plan view. The contact hole 60CT is a hole penetrating the reflective electrode 60, and the relay electrode 61 is disposed inside the opening 60CT.

  In the present embodiment, an alloy (AlCu) film of aluminum (Al) and copper (Cu) with a thickness of 100 nm is formed as a reflective electrode 60 and a relay electrode 61 on a titanium (Ti) film with a thickness of 30 nm, for example. are doing.

  In addition, the organic EL device 200 has an optical adjustment layer 62 instead of the protective layer 37 and the optical path adjustment layer 38 while omitting the enhanced reflection layer 36. The optical adjustment layer 62 covers the surface of the reflective electrode 60 in which the opening 60CT is formed, and has a first insulating film 63 having a recess 63a formed inside the opening 60CT, and a buried insulating film embedded in the recess 63a. It has a film 64 and a second insulating film 66 disposed on the surface of the first insulating film 63.

  In addition, the organic EL device 200 includes a second contact electrode 67 electrically connected to the pixel electrode 31 instead of the second contact electrode 41. The second contact electrode 67 has a first contact part 67a connected to the relay electrode 61, and a second contact part 67b connected to the pixel electrode 31. The contact hole 67CT is a hole penetrating the first insulating film 63, and the first contact portion 67a is formed so as to be embedded in the contact hole 67CT. The second contact part 67b is arranged on the surface of the second insulating film 66.

  In the optical adjustment layer 62, the first insulating film 63 and the buried insulating film 64 function as protective layers. Further, the second insulating film 66 functions as an optical path adjusting layer.

  The second insulating film 66 is disposed so as to cover the surfaces of the first insulating film 63 and the second contact portion 67b. The pixel electrode 31 is connected to a contact electrode 67 (second contact portion 67b) via a contact hole 31CT formed in the second insulating film 66.

  In the present embodiment, a silicon nitride (SiN) film is formed as the first insulating film 63, and a silicon oxide (SiO2) film is formed as the buried insulating film 64 and the second insulating film 66.

  The thickness of the optical adjustment layer 62 increases in the order of the pixel 20B, the pixel 20G, and the pixel 20R. That is, in the pixel 20B, the first insulating film 63 is provided so that, for example, the resonance wavelength (the peak wavelength at which the luminance becomes maximum) is 470 nm. In the pixel 20G, the first insulating film 63 and the second insulating film 66 are provided so that, for example, the resonance wavelength becomes 540 nm. In the pixel 20R, for example, a first insulating film 63, a second insulating film 66, and a third insulating film (not shown) are provided so that the resonance wavelength becomes 610 nm.

  In the present embodiment, the reflection enhancing layer 36 is omitted, but a configuration in which the reflection enhancing layer 36 is provided between the first insulating film 63 and the reflection electrode 60 may be adopted.

  In the organic EL device 200 having the above configuration, the transistor 124 and the pixel electrode 31 are electrically connected via the relay electrode 61 and the contact electrode 67. The contact electrode 67 is provided so as to cover the relay electrode 61 and the opening 60CT. The contact electrode 67 is provided so as to overlap at least a part of the reflective electrode 60 in a plan view. The contact electrode 67 has a light shielding property. According to this configuration, it is possible to improve display quality by blocking the light incident from the opening 60CT with the contact electrode 67. In this embodiment, as the contact electrode 67, for example, a titanium nitride (TiN) film having a thickness of 500 nm is formed.

  In the organic EL device 200 of the present embodiment, as in the organic EL device 100 described above, the first terminal layer 350 has the same first conductive film 35LY as the reflective electrode 35, and the second terminal layer 410 has the contact electrode 67. In the process of manufacturing the organic EL element 30 using the same second conductive film 41LY as the above and the third conductive film 31LY as the pixel electrode 31 for the third terminal layer 310, the first terminal layer 350 , A second terminal layer 410 and a third terminal layer 310 can be manufactured in that order.

  Therefore, in the organic EL device 200 of the present embodiment, similarly to the above-described organic EL device 100, the first terminal layer 350 (the first conductive film 35LY) and the third terminal layer 310 (the third conductive film 31LY) are used. ), The second terminal layer 410 (the second conductive film 41LY) is formed, so that the first terminal layer 350 (the first conductive film 35LY) and the third terminal layer 310 (the third conductive film 35LY) are formed. The resistance value of the external connection terminal 103 can be reduced as compared with the case where the conductive film 31LY is directly laminated. In addition, since the reflective electrode 35 is formed of the first conductive film 35LY, it is possible to prevent the reflectance of the reflective electrode 35 from decreasing.

  Although the description of the method of manufacturing the organic EL device 200 of the present embodiment is omitted, the same effect can be obtained by using the same method as the method of manufacturing the organic EL device 100 described above. is there.

  That is, the first terminal layer 350 has the first conductive film 35LY same as the reflective electrode 35, the second terminal layer 410 has the second conductive film 41LY same as the second contact electrode 67, and the third terminal layer. In the process of manufacturing the organic EL element 30 by using the same third conductive film 31LY as the pixel electrode 31 as the pixel electrode 31, the first terminal layer 350, the second terminal layer 410, and the third terminal layer It is possible to manufacture the external connection terminal 103 in which the external connection terminals 310 and 310 are sequentially stacked.

  The second terminal layer 410 (the second conductive film 41LY) is provided between the first terminal layer 350 (the first conductive film 35LY) and the third terminal layer 310 (the third conductive film 31LY). Is formed, the first terminal layer 350 (the first conductive film 35LY) and the third terminal layer 310 (the third conductive film 31LY) are more directly stacked than the external connection terminals 103. It is possible to lower the resistance value. In addition, since the reflective electrode 35 is formed of the first conductive film 35LY, it is possible to prevent the reflectance of the reflective electrode 35 from decreasing.

(Electronics)
Next, a head-mounted display 1000 shown in FIG. 12 will be described as an example of an electronic apparatus including the organic EL devices 100 and 200. FIG. 12 is a schematic diagram showing the configuration of the mount display 1000.

  As shown in FIG. 12, the head mounted display 1000 has two display units 1001 provided corresponding to the left and right eyes. The observer M can see characters, images, and the like displayed on the display unit 1001 by wearing the head mounted display 1000 on the head like eyeglasses. For example, if an image in which parallax is considered is displayed on the left and right display units 1001, it is possible to enjoy viewing a stereoscopic video.

  The display unit 1001 uses the organic EL devices 100 and 200 described above. In the organic EL devices 100 and 200, the resistance value of the external connection terminal 103 can be reduced while preventing the reflectance of the reflective electrode 35 from decreasing as described above. Therefore, by mounting the organic EL devices 100 and 200 on the display unit 1001, it is possible to provide the head mounted display 1000 that suppresses the occurrence of point defects and has high-quality display.

Note that the present invention is not necessarily limited to the above-described embodiment, and various changes can be made without departing from the spirit of the present invention.
Specifically, the electro-optical device to which the present invention is applied is not limited to an organic EL device including an organic EL element as the light emitting element described above, and includes a self-luminous light emitting element such as an inorganic EL element or an LED. The present invention can be widely applied to electro-optical devices.

  Further, the electronic apparatus to which the present invention is applied is not limited to the head-mounted display 1000 described above. For example, a head-up display, an electronic viewfinder of a digital camera, a portable information terminal, and a display unit of a navigator may be used. An electronic device using an electro-optical device to which is applied.

6 Power line 10 Element substrate 20 (20B, 20G, 20R) Pixel 28 First contact electrode 30 (30B, 30G, 30R) Organic EL element (light emitting element) 31
Pixel electrode (first electrode) 31LY: third conductive film 310: third terminal layer 310CT
... second contact hole 32 ... light emitting function layer (light emitting layer) 33 ... counter electrode (second electrode) 34 ... interlayer insulating layer (insulating layer) 35 ... reflecting electrode 35CT ... opening 35LY ... first conductive film 350 ... First terminal layer 36: Increasing reflection layer 37: Protective layer 38: Optical path adjusting layer 3
9 first insulating films 39a and 39b concave portions 40 embedded insulating films 41 second contact electrodes 41a first contact portions 41b second contact portions 41CT contact holes 41LY second conductive films 410 ... Second terminal layer 410CT First contact hole 60 Reflective electrode 60CT Opening 61 Relay electrode 62 Optical adjustment layer (protective layer, optical path adjustment layer) 63 First insulating film 63a Concavity 64 Embedded Insulating film
66 second insulating film 67 second contact electrode 67a first contact portion 67
b ... second contact part 67CT ... contact hole 67EL ... conductive film 68 ... mask layer E ... display area F ... peripheral area 100,200 ... organic EL device (electro-optical device)
103: external connection terminal (terminal) 110: pixel circuit 124: transistor 100
0: Head mounted display (electronic equipment)

Claims (9)

Comprising a display region in which a plurality of light emitting elements are arranged in a matrix, and a peripheral area where the terminal on the outside of the display region is disposed, the device substrate including,
The light emitting element includes a reflective electrode , an insulating layer covering the reflective electrode, an optical path adjustment layer, a first electrode, a pixel separation layer, a light emitting layer, and a second electrode, which are stacked. A structure in which one electrode is electrically connected to a contact electrode;
The terminal includes a first terminal layer formed of the same first conductive film as the reflective electrode, a second terminal layer formed of the same second conductive film as the contact electrode, and the first terminal layer. A third terminal layer formed of the same third conductive film as the electrode;
The pixel separation layer has an opening exposing a part of the first electrode,
In a plan view, the contact electrode does not overlap with the opening,
In the area between the two said adjacent openings in plan view, Ri part and heavy Do each other of the contact electrode and the end portion of the optical path adjusting layer,
In a region that does not overlap with the opening in plan view, a contact hole that penetrates the insulating layer is provided, and the contact electrode is electrically connected to the reflective electrode through the contact hole,
On a part of the surface of the contact electrode, the optical path adjusting layer is provided, and on another part of the surface of the contact electrode, a part where the optical path adjusting layer is not provided is provided,
The electro-optical device according to claim 1, wherein the first electrode is electrically connected to a contact electrode at the portion . The third conductive film includes a transparent conductive material,
The second conductive film includes a conductive material having higher conductivity than the third conductive film,
The electro-optical device according to claim 1, wherein the first conductive film contains a conductive material. The third conductive film includes indium tin oxide,
The second conductive film includes titanium nitride,
The electro-optical device according to claim 2, wherein the first conductive film includes aluminum and copper.   The first electrode is electrically connected to the reflection electrode via the contact electrode, and the reflection electrode is divided for each pixel and electrically connected to a transistor that drives the light emitting element. The electro-optical device according to claim 1, wherein the electro-optical device is connected to the electro-optical device. The reflective electrode is constituted by a part of a power supply line,
Inside the opening formed in the reflective electrode, a relay electrode electrically connected to a transistor for driving the light emitting element is arranged,
The electro-optical device according to claim 1, wherein the first electrode is electrically connected to the relay electrode via the contact electrode.   An electronic apparatus comprising the electro-optical device according to claim 1. A display area in which a plurality of light emitting elements are arranged in a matrix, wherein the peripheral region where the terminal is located outside of the display region, the light emitting element includes a reflective electrode, an insulating layer covering the reflective electrode A light path adjusting layer, a first electrode, a pixel separation layer, a light emitting layer, and a second electrode are laminated, and the first electrode is electrically connected to a contact electrode. , The terminal has a structure in which a first terminal layer, a second terminal layer, and a third terminal layer are stacked, and the pixel separation layer forms a part of the first electrode. The contact electrode has an opening to be exposed, and in a plan view, the contact electrode does not overlap with the opening, and in a region between two adjacent openings in a plan view, the end of the optical path adjustment layer and the end portion. some of the contact electrode and Ri heavy do each other, in a region which does not overlap with the opening in a plan view, A contact hole penetrating the insulating layer is provided, the contact electrode is electrically connected to the reflection electrode through the contact hole, and the optical path adjustment layer is provided on a part of the surface of the contact electrode. A portion where the optical path adjustment layer is not provided is provided on another part of the surface of the contact electrode, and the first electrode is electrically connected to the contact electrode at the portion. A method for manufacturing an optical device, comprising:
Forming a first conductive film, patterning the first conductive film, forming the reflective electrode in the display region, and forming the first terminal layer in the peripheral region;
Forming a second conductive film; patterning the second conductive film to form the contact electrode in the display region; and forming the second terminal on the first terminal layer in the peripheral region. Stacking layers,
Forming a third conductive film, patterning the third conductive film to form the first electrode in the display region, and forming the third electrode on the second terminal layer in the peripheral region; Laminating the terminal layers described above. The third conductive film includes a transparent conductive material,
The second conductive film includes a conductive material having higher conductivity than the third conductive film,
The method according to claim 7, wherein the first conductive film includes a reflective conductive material. The third conductive film includes indium tin oxide,
The second conductive film includes titanium nitride,
9. The method according to claim 8, wherein the first conductive film contains aluminum and copper.

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