JP6557999B2 - LIGHT EMITTING ELEMENT, ELECTRO-OPTICAL DEVICE, ELECTRONIC DEVICE, AND LIGHT EMITTING ELEMENT MANUFACTURING METHOD - Google Patents

Description

  The present invention relates to a light-emitting element, an electro-optical device including the light-emitting element, an electronic apparatus including the electro-optical device, and a method for manufacturing the light-emitting element.

  As an example of an electro-optical device, for example, an organic EL device in which pixels having transistors and organic electroluminescence (hereinafter referred to as organic EL) elements are arranged in a matrix has been proposed (Patent Document 1).

  In the organic EL device described in Patent Document 1, each pixel includes a light emitting unit that emits light from an organic EL element and a contact unit that supplies a signal from a transistor to an anode (pixel electrode) of the organic EL element. . In the contact portion, a relay electrode electrically connected to the source or drain of the transistor, an insulating film, a light shielding layer (contact electrode), an optical adjustment layer, and a pixel electrode are sequentially stacked. The light shielding layer (contact electrode) is electrically connected to the relay electrode through a first contact hole that penetrates the insulating film. The pixel electrode is electrically connected to the light shielding layer (contact electrode) through a second contact hole that penetrates the optical adjustment layer. The first contact hole is disposed inside the second contact hole, and the second contact hole is larger than the first contact hole.

  By forming a light shielding layer (contact electrode) so as to cover the second contact hole, light emitted from the organic EL element is less likely to enter the transistor, and the light shielding property is improved.

JP2013-238725A

On the other hand, with miniaturization of pixels and increase in luminance, it is required to reduce the contact portion (non-light emitting portion) that does not contribute to display and to increase the light emitting portion.
However, in the configuration in which the first contact hole is disposed inside the second contact hole, the second contact hole becomes large and it is difficult to reduce the contact portion. For this reason, there is a problem that it is difficult to reduce a contact portion (non-light emitting portion) that does not contribute to display and to enlarge a light emitting portion.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

Application Example 1 A light-emitting element according to this application example includes a reflective electrode, an insulating layer, an optical adjustment layer, a first electrode, a light-emitting layer, and a second electrode, which are sequentially stacked. A contact electrode that electrically connects the electrode and the first electrode; a first contact hole that penetrates the insulating layer; and a second contact hole that penetrates the optical adjustment layer. , Located in at least a portion of the first contact hole and on the insulating layer around the first contact hole, and having a recess in the first contact hole, the second contact hole being The method is characterized in that it is located on the contact electrode so as not to overlap the concave portion in plan view.

  Since the second contact hole is located in a place where it does not overlap with the recess (first contact hole) in plan view, both the first contact hole and the second contact hole can be made small.

  For example, in a configuration in which both the recess (first contact hole) and the second contact hole are small and the recess and the second contact hole overlap in plan view, the recess and the second contact hole overlap in plan view. A large step is formed in the part. Furthermore, it is necessary to form the first electrode so as to cover the large step and to be electrically connected to the contact electrode. However, when the level difference that needs to be covered by the first electrode becomes large, the contact of the first electrode is deteriorated at the level difference, and there is a possibility that the first electrode has a problem such as step disconnection (disconnection).

  In this application example, since the second contact hole is located at a position where it does not overlap with the concave portion (first contact hole) in plan view, the step that needs to be covered by the first electrode is reduced. Step breakage (disconnection) hardly occurs in one electrode. Accordingly, it is possible to suppress a problem that a signal is not supplied from the contact electrode to the first electrode due to disconnection of the first electrode and the light emitting element does not emit light (non-lighting of the light emitting element).

  Application Example 2 In the light-emitting element described in the application example, the first electrode has a first side and a second side longer than the first side, and the first electrode The contact hole and the second contact hole are preferably arranged in a direction along the first side.

The first electrode has a rectangular shape having a first side and a second side longer than the first side. Furthermore, the first electrode includes a contact portion to which a signal is supplied from the contact electrode and a light emitting portion that causes the light emitting layer to emit light.
In order to increase the luminance of the light emitting portion, the light emitting portion is formed in a rectangular shape that is elongated in the direction along the second side, and the first contact hole and the second contact hole are formed so that the area of the light emitting portion is increased. It is preferable to arrange.

  The area of the light emitting unit is determined by the product of the length along the first side of the light emitting unit and the length along the second side of the light emitting unit. A case where the first contact hole and the second contact hole are arranged in a direction along the first side, a case where the first contact hole and the second contact hole are arranged in a direction along the second side, and In comparison, since the length in the direction along the second side of the contact portion is reduced, the length in the direction along the second side of the light emitting portion can be increased, and the area of the light emitting portion can be increased. .

Further, when the first contact hole and the second contact hole are arranged in the direction along the first side, and both the first contact hole and the second contact hole are small, the first contact hole is used as the second contact hole. Compared to the case where the second contact hole is larger than the first contact hole, the length in the direction along the second side of the contact portion is reduced, so that the second side of the light emitting unit is arranged. It is possible to increase the length of the light emitting section by increasing the length in the direction along the line.
Therefore, in order to increase the area of the light emitting portion and increase the luminance of the light emitting portion (the luminance of the light emitting element), the first contact hole and the second contact hole are arranged in the direction along the first side. Is preferred.

  Application Example 3 An electro-optical device according to this application example includes the light-emitting element described in the application example.

  Since the electro-optical device according to this application example suppresses the non-lighting of the light emitting element, it can provide a high-quality display in which the occurrence of dot defects is suppressed. Furthermore, the electro-optical device according to this application example can provide a high-luminance display because the luminance of the light-emitting element is increased.

  Application Example 4 An electronic apparatus according to this application example includes the electro-optical device described in the application example.

  By applying the electro-optical device described in the above application example to the display unit of the electronic apparatus according to this application example, a high-quality and high-luminance display can be provided.

  Application Example 5 A manufacturing method of a light emitting element according to this application example includes a reflective electrode, an insulating layer, an optical adjustment layer, a first electrode, a light emitting layer, and a second electrode, A method of manufacturing a light emitting device including a contact electrode for electrically connecting the reflective electrode and the first electrode, the step of forming the insulating layer on the reflective electrode, and a first through the insulating layer Forming a contact hole, forming a contact electrode in at least a part of the first contact hole and on the insulating layer around the first contact hole, and the insulating layer and the contact A step of forming an optical adjustment layer on the electrode; and a step of forming a second contact hole penetrating the optical adjustment layer. In the step of forming the contact electrode, the step of forming the contact electrode in the first contact hole Co In the step of forming a recess of a tact electrode and forming the second contact hole, the second contact hole is formed on the contact electrode at a position that does not overlap the recess in plan view. And

  Since the second contact hole is formed at a position that does not overlap the concave portion (first contact hole) in plan view, both the first contact hole and the second contact hole can be reduced. Furthermore, compared with the case where the second contact hole overlaps the concave portion in plan view, the step that needs to be covered by the first electrode is reduced, and the first electrode is less likely to be disconnected (disconnected) at the step. .

1 is a schematic plan view showing an outline of an organic EL device according to Embodiment 1. FIG. 1 is a diagram illustrating an electrical configuration of an organic EL device according to Embodiment 1. FIG. FIG. 3 is a diagram illustrating an electrical configuration of a pixel circuit. The schematic plan view which shows the state of the main components of an organic EL element. FIG. 2A is a schematic plan view of an organic EL element that emits red light according to Embodiment 1, and FIG. 2B is a schematic plan view of an organic EL element that emits red light according to Comparative Example 1; FIG. 5 is a schematic cross-sectional view of a light emitting portion of an organic EL element along a line segment A-A ′ in FIG. 4. FIG. 5 is a schematic cross-sectional view of a contact portion of an organic EL element along a line segment B-B ′ in FIG. 4. FIG. 6 is a schematic plan view showing a state of main components of an organic EL element according to Comparative Example 2. FIG. 9 is a schematic cross-sectional view of a contact portion of an organic EL element along a line C-C ′ in FIG. 8. FIG. 10 is a schematic plan view showing a state of main components of an organic EL element according to Comparative Example 3. FIG. 11 is a schematic cross-sectional view of a contact portion of an organic EL element along a line D-D ′ in FIG. The process flow which shows the manufacturing method of the organic EL element which concerns on embodiment. The schematic sectional drawing which shows the state of the organic EL element after passing through the main processes shown in FIG. The schematic sectional drawing which shows the state of the organic EL element after passing through the main processes shown in FIG. The schematic sectional drawing which shows the state of the organic EL element after passing through the main processes shown in FIG. FIG. 4 is a schematic diagram illustrating a configuration of a head mounted display according to a second embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. Such an embodiment shows one aspect of the present invention and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. In each of the following drawings, the scale of each layer or each part is made different from the actual scale so that each layer or each part can be recognized on the drawing.

(Embodiment 1)
"Outline of organic electroluminescence equipment"
FIG. 1 is a schematic plan view showing an outline of the organic EL device according to the first embodiment. FIG. 2 is a diagram showing an electrical configuration of the organic EL device according to the present embodiment. FIG. 3 is a diagram illustrating an electrical configuration of the pixel circuit.
First, an outline of the organic EL device 100 according to the present embodiment will be described with reference to FIGS. 1 to 3.

As shown in FIG. 1, the organic EL device 100 includes an element substrate 10 and a protective substrate 70. The element substrate 10 and the protective substrate 70 are bonded to each other by an adhesive (not shown) while facing each other. For example, an epoxy resin or an acrylic resin can be used as the adhesive.
The organic EL device 100 is an example of an “electro-optical device”.

The element substrate 10 includes a pixel 20R in which an organic EL element 30R that emits red (R) light is disposed, a pixel 20G in which an organic EL element 30G that emits green (G) light is disposed, and blue (B) light. The display area E has pixels 20B on which organic EL elements 30B that emit light are arranged in a matrix.
The organic EL element 30R and the organic EL element 30G are examples of “light emitting element”.

In the organic EL device 100, the pixel 20R, the pixel 20G, and the pixel 20B are used as a display unit to provide a full color display.
In the following description, the pixel 20R, the pixel 20G, and the pixel 20B may be collectively handled as the pixel 20, and the organic EL element 30R, the organic EL element 30G, and the organic EL element 30B are collectively handled as the organic EL element 30. There is.

  In the display area E, a color filter layer 50 is provided. In the color filter layer 50, a red color filter layer 50R is disposed on the organic EL element 30R of the pixel 20R, and a green color filter layer 50G is disposed on the organic EL element 30G of the pixel 20G. A blue color filter layer 50B is disposed on the 20B organic EL element 30B.

  In the present embodiment, the pixels 20 that can emit light of the same color are arranged in one direction, and the pixels 20 that can emit light of different colors are arranged in a direction intersecting (orthogonal) with respect to the one direction. Therefore, the arrangement (arrangement) of the pixels 20 is a so-called stripe method. In accordance with the arrangement (arrangement) of the pixels, the pixel 20R (organic EL element 30R), the pixel 20G (organic EL element 30G), and the pixel 20B (organic EL element 30B) are arranged in stripes, and the red color The color filter layer 50R, the green color filter layer 50G, and the blue color filter layer 50B are also arranged in stripes. The arrangement of the pixels 20 is not limited to the stripe method, and may be a mosaic method or a delta method.

In the following description, the direction in which the pixels 20 that can emit light of the same color are arranged is the Y direction, and the direction that intersects the Y direction (the direction in which the pixels 20 that emit light of different colors is arranged) is the X direction. A direction from the element substrate 10 toward the protective substrate 70 is defined as a Z direction.
Further, in the drawing, the tip side of the arrow indicating each direction is (+), and the base end side is (−). Further, viewing from the Z direction is referred to as planar view. That is, the planar view in the present application refers to a state viewed from the Z direction.

  The light emitted from the organic EL element 30 passes through the color filter layer 50 of the element substrate 10 and is emitted as display light from the protective substrate 70 side. That is, the organic EL device 100 has a top emission structure.

  Since the organic EL device 100 has a top emission structure, an opaque substrate made of a ceramic material or a semiconductor material is used as a base material of the element substrate 10 in addition to a transparent quartz substrate or a glass substrate. it can. In the present embodiment, the base material of the element substrate 10 is made of silicon.

  Outside the display area E, a plurality of external connection terminals 103 are arranged along one side of the long side of the element substrate 10. A data line drive circuit 101 is provided between the plurality of external connection terminals 103 and the display area E. A scanning line driving circuit 102 is provided between the two sides on the short side of the element substrate 10 and the display area E.

  The protective substrate 70 is smaller than the element substrate 10 and is disposed to face the element substrate 10 so that the external connection terminals 103 are exposed. The external connection terminal 103 is connected to a flexible wiring board (not shown). Thereby, the organic EL device 100 can be electrically connected to an external circuit (not shown) through the flexible wiring board.

  The protective substrate 70 is a translucent substrate, and a quartz substrate, a glass substrate, or the like can be used. The protective substrate 70 has a role of protecting the organic EL elements 30 arranged in the display area E so as not to be damaged, and is provided wider than the display area E.

  As shown in FIG. 2, the element substrate 10 is provided with m rows of scanning lines 12 extending in the X direction and n columns of data lines 14 extending in the Y direction. The element substrate 10 is provided with a power supply line 19 extending in the Y direction for each column along the data line 14.

  The element substrate 10 is provided with a pixel circuit 110 corresponding to the intersection of the m rows of scanning lines 12 and the n columns of data lines 14. The pixel circuit 110 forms part of the pixel 20. That is, in the display area E, m rows × n columns of pixel circuits 110 are arranged in a matrix.

  A reset potential Vorst for initialization is supplied (powered) to the power line 19. Further, although not shown, three control lines for supplying control signals Gcmp, Gel, and Gorst are provided in parallel with the scanning lines 12.

  The scanning line 12 is electrically connected to the scanning line driving circuit 102. The data line 14 is electrically connected to the data line driving circuit 101. The scanning line driving circuit 102 is supplied with a control signal Ctr1 for controlling the scanning line driving circuit 102. The data line driving circuit 101 is supplied with a control signal Ctr2 for controlling the data line driving circuit 101.

  The scanning line driving circuit 102 scans the scanning lines 12 for each row over a frame period, scanning signals Gwr (1), Gwr (2), Gwr (3),..., Gwr (m−1), Gwr. (M) is generated according to the control signal Ctr1. Further, the scanning line driving circuit 102 supplies control signals Gcmp, Gel, and Gorst to the control lines in addition to the scanning signal Gwr. The frame period is a period in which an image for one cut (frame) is displayed on the organic EL device 100. For example, if the frequency of the vertical synchronization signal included in the synchronization signal is 120 Hz, the period of one frame Is about 8.3 milliseconds.

  The data line driver circuit 101 applies data signals Vd (1) and Vd (2) having potentials corresponding to the gradation data of the pixel circuit 110 to the pixel circuit 110 located in the row selected by the scanning line driver circuit 102. ,..., Vd (n) are supplied to the data lines 14 in the 1, 2,.

As illustrated in FIG. 3, the pixel circuit 110 includes P-channel MOS transistors 121, 122, 123, 124, 125, an organic EL element 30, and a capacitor 21. The pixel circuit 110 is supplied with the above-described scanning signal Gwr, control signals Gcmp, Gel, Gorst, and the like.
The transistors 124 and 125 in the pixel circuit 110 of the pixel 20R and the transistors 124 and 125 in the pixel circuit 110 of the pixel 20G are examples of “transistors”.

The organic EL element 30 has a structure in which a light emitting functional layer 32 is sandwiched between a pixel electrode 31 and a counter electrode 33 facing each other. That is, the organic EL element 30 has a structure in which the light emitting functional layer 32 and the counter electrode 33 are sequentially stacked on the pixel electrode 31.
The pixel electrode 31 is an example of a “first electrode”, the light emitting functional layer 32 is an example of a “light emitting layer”, and the counter electrode 33 is an example of a “second electrode”.

  The pixel electrode 31 is an anode that supplies holes to the light emitting functional layer 32, and is composed of a light-transmitting conductive material, for example, an ITO (Indium Tin Oxide) film. The film thickness of the pixel electrode 31 is as thin as 20 nm, for example. The pixel electrode 31 is electrically connected to one of the drain of the transistor 124 and the source or drain of the transistor 125.

  The counter electrode 33 is a cathode that supplies electrons to the light emitting functional layer 32, and is formed of a conductive material having light transmissivity and light reflectivity, such as an alloy of magnesium (Mg) and silver (Ag). . The counter electrode 33 is a common electrode provided across the plurality of pixels 20, and is electrically connected to the power supply line 8. The power supply line 8 is supplied with a potential Vct which is the lower side of the power supply in the pixel circuit 110.

  The light emitting functional layer 32 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and the like, which are sequentially stacked from the pixel electrode 31 side. In the organic EL element 30, the light-emitting functional layer 32 emits light by combining holes supplied from the pixel electrode 31 and electrons supplied from the counter electrode 33 in the light-emitting functional layer 32.

  The element substrate 10 is provided with power supply lines 6 extending in the X direction so as to intersect the power supply lines 19. The power supply line 19 may be provided so as to extend in the Y direction, or may be provided so as to extend in both the X direction and the Y direction. The source of the transistor 121 is electrically connected to the power supply line 6, and the drain is electrically connected to the source of the transistor 123 or the other of the drain and the source of the transistor 124. The power supply line 6 is supplied with a potential Vel which is the higher power supply side in the pixel circuit 110. Further, one end of a capacitor 21 is electrically connected to the power supply line 6. The transistor 121 functions as a driving transistor that passes a current according to the voltage between the gate and the source of the transistor 121.

  The transistor 122 has a gate electrically connected to the scanning line 12 and one of a source and a drain electrically connected to the data line 14. In the transistor 122, the other of the source and the drain is electrically connected to the gate of the transistor 121, the other end of the capacitor 21, and one of the source and the drain of the transistor 123. The transistor 122 is electrically connected between the gate of the transistor 121 and the data line 14, and functions as a writing transistor that controls the electrical connection between the gate of the transistor 121 and the data line 14.

  The transistor 123 has a gate electrically connected to a control line and is supplied with a control signal Gcmp. The transistor 123 functions as a threshold compensation transistor that controls electrical connection between the gate and drain of the transistor 121.

  The gate of the transistor 124 is electrically connected to the control line, and the control signal Gel is supplied. The drain of the transistor 124 is electrically connected to one of the source and drain of the transistor 125 and the pixel electrode 31 of the organic EL element 30. The transistor 124 functions as a light emission control transistor that controls electrical connection between the drain of the transistor 121 and the pixel electrode 31 of the organic EL element 30.

  Note that the pixel electrode 31 of the organic EL element 30 is electrically connected to one of the drain of the transistor 124 and the source or drain of the transistor 125 via the first relay electrode 28.

  The gate of the transistor 125 is electrically connected to the control line, and the control signal Gorst is supplied. The other of the source and the drain of the transistor 125 is electrically connected to the power line 19 and is supplied with a reset potential Vorst. The transistor 125 functions as an initialization transistor that controls electrical connection between the power supply line 19 and the pixel electrode 31 of the organic EL element 30.

"Outline of organic EL elements"
Next, an outline of the organic EL element will be described.
FIG. 4 is a schematic plan view showing a state of main components of the organic EL element. FIG. 5A is a schematic plan view of an organic EL element that emits red light according to the present embodiment. FIG. 5B is a schematic plan view of an organic EL element that emits red light according to Comparative Example 1.
In FIG. 5B, the same components as those in the first embodiment are denoted by the same reference numerals.

  4 and 5, the reflective electrode 35 is indicated by shading, the pixel electrode 31 is indicated by a thick broken line, the second relay electrode 41 is indicated by a thick alternate long and short dash line, and the contact holes 72, 73, and 75 are thin. It is indicated by a broken line, and the opening 71 is indicated by a thin solid line. Further, in FIG. 5A, the outline of the pixel 20 is indicated by a two-dot chain line.

  As shown in FIGS. 4 and 5A, the pixel 20 (pixels 20R, 20G, and 20B) has a rectangular shape in plan view, and is arranged so that the lateral direction of the pixel 20 is parallel to the X direction. The pixels 20 are arranged so that the longitudinal direction thereof is parallel to the Y direction.

Each of the pixels 20 (pixels 20R, 20G, and 20B) is provided with an organic EL element 30 (organic EL elements 30R, 30G, and 30B). The organic EL element 30 includes a reflective electrode 35, a second relay electrode 41, a pixel electrode 31, a light emitting functional layer 32 (see FIG. 3), a counter electrode 33 (see FIG. 3), and the like.
The second relay electrode 41 in the organic EL element 30R and the second relay electrode 41 in the organic EL element 30G are examples of “contact electrodes”.

The reflective electrode 35 is arranged in an island shape on each of the pixels 20. The reflective electrode 35 has a rectangular shape in plan view and is long in the Y direction. The reflective electrode 35 is made of a conductive material having light reflectivity, and has light reflectivity. Specifically, the reflective electrode 35 is made of an alloy containing aluminum (Al) as a main component, for example, an alloy of Al and titanium (Ti). The film thickness of the reflective electrode 35 is approximately 130 nm.
A first groove 74 is formed between the reflective electrode 35 of the pixel 20 and the adjacent reflective electrode 35 of the adjacent pixel 20.

  The second relay electrode 41 overlaps with the reflective electrode 35 and the pixel electrode 31 in a plan view, and is disposed on the Y (+) direction side of the pixel 20. The second relay electrode 41 is an electrode for electrically connecting the pixel electrode 31 and the reflective electrode 35. The second relay electrode 41 has a rectangular shape in plan view and is long in the X direction. The second relay electrode 41 is made of, for example, titanium nitride (TiN), and the thickness of the second relay electrode 41 is approximately 50 nm.

Insulating films 61, 62, 63, 64 (see FIG. 7) are disposed between the reflective electrode 35 and the second relay electrode 41. A contact hole 75 penetrating the insulating films 61, 62, 63, 64 is formed. Furthermore, a concave portion 81 (see FIG. 7) described later is formed inside the contact hole 75.
The contact hole 75 in the organic EL element 30R and the contact hole 75 in the organic EL element 30G are examples of “first contact holes”.

The pixel electrode 31 is arranged in an island shape on each of the pixels 20, overlaps with the reflective electrode 35 in plan view, and is slightly smaller than the reflective electrode 35. The pixel electrode 31 has a rectangular shape in plan view and is long in the Y direction. The pixel electrode 31 has a side 31X along the X direction and a side 31Y along the Y direction.
The side 31X of the pixel electrode 31 in the organic EL element 30R and the side 31X of the pixel electrode 31 in the organic EL element 30G are examples of the “first side”. The side 31Y of the pixel electrode 31 in the organic EL element 30R and the side 31Y of the pixel electrode 31 in the organic EL element 30G are examples of the “second side”.

In the organic EL element 30 </ b> R, insulating films 65 and 66 (see FIG. 7) are disposed between the second relay electrode 41 and the pixel electrode 31. A contact hole 72 is formed through the insulating films 65 and 66.
The contact hole 72 in the organic EL element 30R is an example of a “second contact hole”.

In the organic EL element 30G, an insulating film 66 (sixth insulating film 66) is disposed between the second relay electrode 41 and the pixel electrode 31. A contact hole 73 that penetrates the insulating film 66 is formed.
The contact hole 73 in the organic EL element 30G is an example of a “second contact hole”.

That is, the organic EL element 30R has the contact hole 72 and the contact hole 75, the organic EL element 30G has the contact hole 73 and the contact hole 75, and the organic EL element 30B has only the contact hole 75.
Note that the contact hole 72, the contact hole 73, and the contact hole 75 are formed through a film formation process, a photolithography process, an etching process, and the like, and the minimum dimensions that can be formed in these processes (small dimensions corresponding to process limits). ) W1. That is, the contact hole 72, the contact hole 73, and the contact hole 75 have a square shape, and the length of one side is a small dimension W1 corresponding to the process limit.

In each of the organic EL elements 30, the second relay electrode 41 is electrically connected to the reflective electrode 35 through the contact hole 75. Further, the reflective electrode 35 is electrically connected to one of the drain of the transistor 124 and the source or drain of the transistor 125 via the first relay electrode 28 (see FIG. 3), and the signal of the pixel circuit 110 is supplied. The
As described above, the portion where the second relay electrode 41 is formed forms a pixel contact to which a signal of the pixel circuit 110 is supplied, and is hereinafter referred to as a contact portion.

  The outer edge of the pixel electrode 31 is covered with a protective insulating film 29 (see FIG. 6). An opening 71 for exposing the pixel electrode 31 is formed in the protective insulating film 29. The opening 71 has a rectangular shape in plan view and is long in the Y direction.

  On the pixel electrode 31 exposed through the opening 71, a light emitting functional layer 32 (see FIG. 3) and a counter electrode 33 (see FIG. 3) are sequentially stacked. Then, the holes supplied from the pixel electrode 31 and the electrons supplied from the counter electrode 33 are combined in the light emitting functional layer 32, whereby the light emitting functional layer 32 emits light. That is, the portion of the light emitting functional layer 32 in contact with the pixel electrode 31 exposed at the opening 71 emits light, and the opening 71 defines the area of the portion of the organic EL element 30 that emits light.

Therefore, when the area of the opening 71 is increased, the light emitting area of the organic EL element 30 is increased, the light emission luminance of the organic EL element 30 is increased, and a bright display is obtained. In order to obtain a brighter display, it is preferable to increase the area of the opening 71.
Hereinafter, the portion where the opening 71 is formed is referred to as a light emitting portion.

  As described above, by forming the contact hole 72, the contact hole 73, and the contact hole 75 with a small dimension W1 corresponding to the process limit, the area of the contact portion is reduced, the area of the light emitting portion is increased, and more A bright display can be obtained.

  As shown in FIGS. 4 and 5A, in the organic EL element 30R according to this embodiment, the contact hole 72 and the contact hole 75 are arranged along the X direction. That is, the contact hole 72 and the contact hole 75 are arranged in a direction along the side 31 </ b> X of the pixel electrode 31.

"Comparative Example 1"
As shown in FIG. 5B, in the organic EL element 30R according to Comparative Example 1, the contact hole 72 and the contact hole 75 are arranged along the Y direction. That is, the contact hole 72 and the contact hole 75 are arranged in a direction along the side 31 </ b> Y of the pixel electrode 31. When the contact hole 72 and the contact hole 75 are arranged along the Y direction, the dimension in the Y direction of the contact part is increased, and the dimension in the Y direction of the light emitting part (opening 71) is reduced, so that the area of the light emitting part is reduced.

  Therefore, in the organic EL element 30R according to the present embodiment in which the contact hole 72 and the contact hole 75 are arranged along the X direction (FIG. 5A), the contact hole 72 and the contact hole 75 are arranged along the Y direction. Compared to the organic EL element 30R according to Comparative Example 1 (FIG. 5B), the dimension of the opening 71 in the Y direction is increased, the area of the opening 71 (the area of the light emitting portion) is increased, and the display is brighter. Can be obtained.

  Therefore, in the organic EL element 30R, when the contact hole 72 and the contact hole 75 are arranged along the X direction, the organic EL element 30R emits light compared to the case where the contact hole 72 and the contact hole 75 are arranged along the Y direction. The brightness of the red light produced can be increased.

  In other words, in the organic EL element 30 </ b> R, when the pixel electrode 31 has a rectangular shape and the two contact holes 72 and 75 are arranged in the pixel electrode 31, the two contact holes 72 and 75 are connected to the pixel electrode 31. When the organic EL element 30R is arranged in the direction along the short side (side 31X), the two contact holes 72 and 75 are arranged in the direction along the long side (side 31Y) of the pixel electrode 31. The brightness of the emitted red light can be increased.

  In the organic EL element 30G, as in the organic EL element 30R, the contact hole 73 and the contact hole 75 are arranged along the X direction, and the contact hole 73 and the contact hole 75 are arranged along the Y direction. Thus, the luminance of green light emitted from the organic EL element 30G can be increased.

  In other words, in the organic EL element 30 </ b> G, when the pixel electrode 31 has a rectangular shape and the two contact holes 73 and 75 are arranged in the pixel electrode 31, the two contact holes 73 and 75 are connected to the pixel electrode 31. When the organic EL element 30G is arranged in the direction along the short side (side 31X), the two contact holes 73 and 75 are arranged in the direction along the long side (side 31Y) of the pixel electrode 31. The brightness of the emitted green light can be increased.

"Structure of organic EL elements"
FIG. 6 is a schematic cross-sectional view of the light emitting portion of the organic EL element along the line AA ′ in FIG. FIG. 7 is a schematic cross-sectional view of the contact portion of the organic EL element taken along line BB ′ in FIG. 6 and 7, the light emitting functional layer 32 and the counter electrode 33 described above are not shown.

  6 and 7, the substrate 11 has a power source line 6, 8, 19, a scanning line 12, a data line 14, a control line, a first relay electrode 28, and a capacitor 21 on a base material made of silicon. , Transistors 121, 122, 123, 124, 125, a data line driving circuit 101, a scanning line driving circuit 102 (see FIGS. 2 and 3), and the like.

First, the structure of the light emitting portion of the organic EL element 30 will be described with reference to FIG.
As shown in FIG. 6, the reflective electrode 35 is formed in an island shape on each of the organic EL elements 30 on the substrate 11. The reflective electrode 35 has light reflectivity and reflects light emitted from the light emitting functional layer 32 in the Z (+) direction.

A first insulating film 61 is formed so as to cover the surface of the reflective electrode 35. The first insulating film 61 has a role of improving the reflection characteristics of the reflective electrode 35 and is made of an insulating material having light transmittance. The first insulating film 61 is made of, for example, a silicon oxide (SiO ₂ ) film having a thickness of 40 nm.

  Although details will be described later, the reflective electrode 35 and the first insulating film 61 are patterned in the same shape. As a result, a first groove 74 is formed between the reflective electrode 35 and the first insulating film 61 of the pixel 20 and the reflective electrode 35 and the first insulating film 61 of the adjacent pixel 20.

  The second insulating film 62 covers the surface of the first insulating film 61 and the first groove 74 and is disposed across the plurality of pixels 20. The second insulating film 62 is composed of an insulating material having optical transparency, for example, a silicon nitride (SiN) film having a thickness of 40 nm. The second insulating film 62 has a role of protecting the first insulating film 61 so that the first insulating film 61 is not attacked.

  The first groove 74 is covered with the second insulating film 62, and a second groove 77 reflecting the shape of the first groove 74 is formed inside the first groove 74. The second trench 77 is filled (embedded) with a buried insulating film 40. The buried insulating film 40 is made of a light-transmitting insulating material such as a silicon oxide film. The buried insulating film 40 and the second insulating film 62 form a flat surface.

  A flat surface formed by the buried insulating film 40 and the second insulating film 62 is covered with a third insulating film 63. The third insulating film 63 is made of a light-transmitting insulating material, such as a silicon nitride film, and has a role of protecting the buried insulating film 40 so that the buried insulating film 40 is not attacked.

  In the light emitting portion of the organic EL element 30R, the first insulating film 61, the second insulating film 62, the third insulating film 63, the fifth insulating film 65, and the sixth insulating film 66 are formed on the reflective electrode 35. The pixel electrode 31 is sequentially stacked. The third insulating film 63, the fifth insulating film 65, and the sixth insulating film 66 constitute an adjustment layer 68 in the organic EL element 30R.

  The fifth insulating film 65 is made of an insulating material having optical transparency, for example, a silicon oxide film. In the display region E, the fifth insulating film 65 is disposed in the pixel 20R and has a stripe shape. That is, the fifth insulating film 65 is disposed across the plurality of organic EL elements 30R arranged in the Y direction.

  The sixth insulating film 66 is made of a light-transmitting insulating material such as a silicon oxide film. In the display region E, the sixth insulating film 66 is disposed in the pixels 20R and 20G and has a stripe shape. That is, the sixth insulating film 66 is disposed across the plurality of organic EL elements 30R arranged in the Y direction and the plurality of organic EL elements 30G arranged in the Y direction.

  In the light emitting portion of the organic EL element 30G, the first insulating film 61, the second insulating film 62, the third insulating film 63, the sixth insulating film 66, and the pixel electrode 31 are sequentially formed on the reflective electrode 35. Are stacked. The third insulating film 63 and the sixth insulating film 66 constitute an adjustment layer 68 in the organic EL element 30G.

  In the light emitting portion of the organic EL element 30 </ b> B, the first insulating film 61, the second insulating film 62, the third insulating film 63, and the pixel electrode 31 are sequentially stacked on the reflective electrode 35. The third insulating film 63 constitutes the adjustment layer 68 in the organic EL element 30B.

  The outer edge of the pixel electrode 31 is covered with a protective insulating film 29, and an opening 71 for exposing the pixel electrode 31 is formed in the protective insulating film 29. Although not shown, the light emitting functional layer 32 (see FIG. 3) and the counter electrode 33 (see FIG. 3) are sequentially stacked on the pixel electrode 31 exposed by the opening 71, and the light emitting functional layer 32 emits light. .

Therefore, the light emitting portion of the organic EL element 30R includes the reflective electrode 35, the first insulating film 61, the second insulating film 62, the third insulating film 63, the fifth insulating film 65, and the sixth insulating film 66. The pixel electrode 31, the light emitting functional layer 32, and the counter electrode 33 are sequentially stacked.
The light emitting portion of the organic EL element 30G includes a reflective electrode 35, a first insulating film 61, a second insulating film 62, a third insulating film 63, a sixth insulating film 66, a pixel electrode 31, and a light emitting functional layer. 32 and the counter electrode 33 are sequentially stacked.
The light emitting portion of the organic EL element 30B includes a reflective electrode 35, a first insulating film 61, a second insulating film 62, a third insulating film 63, a pixel electrode 31, a light emitting functional layer 32, and a counter electrode 33. Are stacked in order.

  For this reason, the distance (optical distance) between the reflective electrode 35 and the counter electrode 33 becomes smaller in the order of the light emitting part of the organic EL element 30R, the light emitting part of the organic EL element 30G, and the light emitting part of the organic EL element 30B. Yes.

As described above, the counter electrode 33 has a light transmitting property and a light reflecting property, and serves as one reflecting layer that reflects the light emitted from the light emitting functional layer 32. The reflective electrode 35 has light reflectivity and serves as the other reflective layer that reflects the light emitted from the light emitting functional layer 32.
The light emitted from the light emitting functional layer 32 is repeatedly reflected between the counter electrode 33 and the reflective electrode 35, and has a specific wavelength (resonance wavelength) corresponding to the optical distance between the counter electrode 33 and the reflective electrode 35. Light is amplified. Further, the light amplified to the resonance wavelength between the counter electrode 33 and the reflective electrode 35 is emitted from the counter electrode 33 in the Z (+) direction, passes through the color filter layer 50, and becomes display light.

  In the light emitting portion of the organic EL element 30R, the optical distance between the reflective electrode 35 and the counter electrode 33 is set so that the resonance wavelength (the peak wavelength at which the luminance is maximum) is 610 nm. That is, the thickness of the adjustment layer 68 (the third insulating film 63, the fifth insulating film 65, and the sixth insulating film 66) is adjusted so that the resonance wavelength is 610 nm. As a result, red light having a peak wavelength of 610 nm is emitted from the light emitting portion of the organic EL element 30R in the Z (+) direction. Furthermore, red light having a peak wavelength of 610 nm passes through the red color filter layer 50R, and the color purity of the red light is enhanced.

  In the light emitting portion of the organic EL element 30G, the optical distance between the reflective electrode 35 and the counter electrode 33 is set so that the resonance wavelength is 540 nm. That is, the thickness of the adjustment layer 68 (the third insulating film 63 and the sixth insulating film 66) is adjusted so that the resonance wavelength is 540 nm. As a result, green light having a peak wavelength of 540 nm is emitted from the light emitting portion of the organic EL element 30G in the Z (+) direction. Further, green light having a peak wavelength of 540 nm passes through the green color filter layer 50G, and the color purity of the green light is enhanced.

  In the light emitting portion of the organic EL element 30B, the optical distance between the reflective electrode 35 and the counter electrode 33 is set so that the resonance wavelength is 470 nm. That is, the thickness of the adjustment layer 68 (third insulating film 63) is adjusted so that the resonance wavelength is 470 nm. As a result, blue light having a peak wavelength of 470 nm is emitted from the light emitting portion of the organic EL element 30B in the Z (+) direction. Further, blue light having a peak wavelength of 470 nm passes through the blue color filter layer 50B, and the color purity of the blue light is enhanced.

Next, the structure of the contact portion of the organic EL element 30 will be described with reference to FIG.
As shown in FIG. 7, the reflective electrode 35 is arranged in an island shape for each pixel 20 on the substrate 11. In the contact portion of the organic EL element 30, the first insulating film 61, the second insulating film 62, the third insulating film 63, the fourth insulating film 64, and the second relay electrode 41 are formed on the reflective electrode 35. Are stacked in order.
The first insulating film 61, the second insulating film 62, the third insulating film 63, and the fourth insulating film 64 are examples of “insulating layers”.

The fourth insulating film 64 is made of, for example, a silicon oxide film having a thickness of 65 nm. Although details will be described later, the fourth insulating film 64 protruding from the second relay electrode 41 is removed by etching, and the fourth insulating film 64 is disposed between the third insulating film 63 and the second relay electrode 41. ing. For this reason, the fourth insulating film 64 is disposed in the contact portion of the organic EL element 30 and is not disposed in the light emitting portion of the organic EL element 30.
Note that the contact portion of the organic EL element 30 may not include the fourth insulating film 64.

  A contact hole 75 penetrating the first insulating film 61, the second insulating film 62, the third insulating film 63, and the fourth insulating film 64 is formed on the reflective electrode 35.

A second relay electrode 41 is formed in at least a part of the contact hole 75 (inside the contact hole 75) and on the fourth insulating film 64 around the contact hole 75.
The second relay electrode 41 is formed so as to cover the contact hole 75, and has a recess 81 in the contact hole 75. That is, the recess 81 reflecting the shape of the contact hole 75 is formed inside the contact hole 75.

In the second relay electrode 41, the bottom surface of the recess 81 (the portion in contact with the reflective electrode 35) is the first contact portion 41 a and is formed on at least a part of the fourth insulating film 64 around the contact hole 75. This portion is the second contact portion 41b.
In the second relay electrode 41, the first contact portion 41 a contacts the reflective electrode 35 and is electrically connected to the reflective electrode 35.

In the contact portion of the organic EL element 30R, the fifth insulating film 65, the sixth insulating film 66, and the pixel electrode 31 are sequentially stacked on the second relay electrode 41.
The fifth insulating film 65 and the sixth insulating film 66 are examples of the “optical adjustment layer” in the organic EL element 30R.

  A contact hole 72 that penetrates the fifth insulating film 65 and the sixth insulating film 66 is formed on the second contact portion 41 b of the second relay electrode 41. The contact hole 72 is located on the second relay electrode 41 (formed on the second contact portion 41b) and at a location that does not overlap the concave portion 81 in plan view.

  Further, the pixel electrode 31 is formed so as to cover the contact hole 72. The pixel electrode 31 is in contact with the second contact portion 41 b through the contact hole 72 and is electrically connected to the second relay electrode 41.

  Therefore, in the contact portion of the organic EL element 30R, the pixel electrode 31 is connected via the contact hole 72, the second relay electrode 41 (second contact portion 41b, first contact portion 41a), and the contact hole 75. And electrically connected to the reflective electrode 35. That is, the second relay electrode 41 is an electrode for electrically connecting the pixel electrode 31 and the reflective electrode 35.

In the contact portion of the organic EL element 30G, the sixth insulating film 66 and the pixel electrode 31 are sequentially stacked on the second relay electrode 41.
The sixth insulating film 66 is an example of an “optical adjustment layer” in the organic EL element 30G.

  A contact hole 73 that penetrates the sixth insulating film 66 is formed on the second contact portion 41 b of the second relay electrode 41. The contact hole 73 is located on the second relay electrode 41 (formed on the second contact portion 41b) and at a location that does not overlap the concave portion 81 in plan view.

  Further, the pixel electrode 31 is formed so as to cover the contact hole 73. The pixel electrode 31 is in contact with the second contact portion 41 b through the contact hole 73 and is electrically connected to the second relay electrode 41.

  Therefore, in the contact portion of the organic EL element 30G, the pixel electrode 31 is connected via the contact hole 73, the second relay electrode 41 (second contact portion 41b, first contact portion 41a), and the contact hole 75. And electrically connected to the reflective electrode 35. That is, the second relay electrode 41 is an electrode for electrically connecting the pixel electrode 31 and the reflective electrode 35.

  In the contact portion of the organic EL element 30 </ b> B, the pixel electrode 31 is formed so as to cover the second relay electrode 41. That is, the pixel electrode 31 is in direct contact with the second relay electrode 41 and is electrically connected to the second relay electrode 41.

  As described above, the reflective electrode 35 is electrically connected to the drain of the transistor 124 and one of the source and the drain of the transistor 125 via the first relay electrode 28 (see FIG. 3), and the signal of the pixel circuit 110. Is supplied. Therefore, in the contact portion of the organic EL element 30, the pixel electrode 31 is connected to the drain of the transistor 124 and the source or drain of the transistor 125 via the second relay electrode 41, the reflective electrode 35, and the first relay electrode 28. The signal of the pixel circuit 110 is supplied by being electrically connected to one side.

"Comparative Example 2"
FIG. 8 is a diagram corresponding to FIG. 4, and is a schematic plan view showing a state of main components of the organic EL element according to Comparative Example 2. FIG. 9 corresponds to FIG. 7 and is a schematic cross-sectional view of the contact portion of the organic EL element taken along line CC ′ in FIG.
In Comparative Example 2, the formation positions of the contact hole 72 and the contact hole 73 are different from those in the first embodiment. Other configurations are the same in Comparative Example 2 and the present embodiment.
8 and 9, the same components as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 8, in the organic EL element 30 </ b> R of the pixel 20 </ b> R, the contact hole 72 is formed so as to overlap the recess 81 in plan view. In the organic EL element 30G of the pixel 20G, the contact hole 73 is formed so as to overlap the recess 81 in plan view.

  In this embodiment, in the contact portion of the organic EL element 30R, the pixel electrode 31 has a step formed by the contact hole 72 (a step corresponding to the total thickness of the fifth insulating film 65 and the sixth insulating film 66). The cover is in contact with the second contact portion 41b and is electrically connected to the second relay electrode 41 (see FIG. 7).

In Comparative Example 2, as shown in FIG. 9, in the contact portion of the organic EL element 30R, the pixel electrode 31 has a step formed by the contact hole 72 (total thickness of the fifth insulating film 65 and the sixth insulating film 66). And a step H1 that is the sum of the step formed by the recess 81 (the step corresponding to the total thickness of the first insulating film 61, the second insulating film 62, and the third insulating film 63). The first contact portion 41a is in contact with and electrically connected to the second relay electrode 41.
Therefore, in the contact portion of the organic EL element 30R, the step that the pixel electrode 31 needs to cover is larger in the comparative example 2 than in the present embodiment.

  In the present embodiment, in the contact portion of the organic EL element 30G, the pixel electrode 31 covers the step formed by the contact hole 73 (step corresponding to the thickness of the sixth insulating film 66), and the second contact portion 41b. And is electrically connected to the second relay electrode 41 (see FIG. 7).

In Comparative Example 2, in the contact portion of the organic EL element 30G, the pixel electrode 31 is formed by a step formed by the contact hole 73 (a step corresponding to the thickness of the sixth insulating film 66) and the contact hole 75. The first contact portion of the second relay electrode 41 covers the step H2 that is the sum of the steps (the step corresponding to the total thickness of the first insulating film 61, the second insulating film 62, and the third insulating film 63). It is in contact with 41 a and is electrically connected to the second relay electrode 41.
Therefore, in the contact portion of the organic EL element 30G, the step that the pixel electrode 31 needs to cover is larger in the comparative example 2 than in the present embodiment.

  The ITO film constituting the pixel electrode 31 is formed by a vacuum film forming method such as a sputtering method. A vacuum film-forming method such as a sputtering method is less likely to form a film at a step portion than a liquid phase method such as plating or a sol-gel method. For this reason, when the level difference that needs to be covered by the pixel electrode 31 (ITO film) becomes large, the ITO film becomes poorly attached at the level difference portion. For example, the ITO film is disconnected or the resistance of the ITO film is increased. Is likely to occur.

  For example, if a break in the ITO film (disconnection of the pixel electrode 31) occurs in the step portion, no signal is supplied from the pixel circuit 110 to the pixel electrode 31, and the organic EL element 30 does not emit light (non-lighting), and the organic EL device At 100, a dot defect occurs.

  For example, when the resistance of the ITO film increases at the step portion, the signal supplied from the pixel circuit 110 to the pixel electrode 31 is reduced, the luminance of the light emitted from the organic EL element 30 is changed, and the dot unevenness ( Uneven brightness in dots) occurs.

  In the present embodiment, compared with the second comparative example, the level difference that the pixel electrode 31 needs to cover is small, and problems such as disconnection of the ITO film and increase in resistance of the ITO film are unlikely to occur. Therefore, the configuration of this embodiment, that is, the second relay electrode 41 is located in at least a part of the contact hole 75 and on the fourth insulating film 64 around the contact hole 75, and the recess 81 is formed in the contact hole 75. It is preferable that the contact holes 72 and 73 are located on the second relay electrode 41 and at positions where the contact holes 72 and 73 do not overlap with the concave portion 81 in plan view.

“Comparative Example 3”
FIG. 10 is a diagram corresponding to FIG. 4 and is a schematic plan view showing a state of main components of the organic EL element according to Comparative Example 3. FIG. 11 is a diagram corresponding to FIG. 7 and is a schematic cross-sectional view of the contact portion of the organic EL element along the line DD ′ in FIG.
In Comparative Example 3, the formation positions of the contact hole 72 and the contact hole 73 are different from those in the first embodiment. Other configurations are the same in Comparative Example 3 and the present embodiment.
10 and 11, the same reference numerals are given to the same components as those in the first embodiment.

  As shown in FIG. 10, a contact hole 72 is formed so as to surround the contact hole 75 in the contact portion of the organic EL element 30R. That is, the contact hole 75 is formed inside the contact hole 72. The dimension of the contact hole 72 is W2, which is larger than the dimension W1 of the contact hole 75.

  A contact hole 73 is formed so as to surround the contact hole 75 in the contact portion of the organic EL element 30G. That is, the contact hole 75 is formed inside the contact hole 73. The dimension of the contact hole 73 is W2, which is larger than the dimension W1 of the contact hole 75.

  As shown in FIG. 11, in the contact portion of the organic EL element 30R, the contact hole 72 is formed so as to expose both the first contact portion 41a and the second contact portion 41b. The pixel electrode 31 is in contact with both the first contact portion 41 a and the second contact portion 41 b and is electrically connected to the second relay electrode 41.

  In the contact portion of the organic EL element 30G, the contact hole 73 is formed so as to expose both the first contact portion 41a and the second contact portion 41b. The pixel electrode 31 is in contact with both the first contact portion 41 a and the second contact portion 41 b and is electrically connected to the second relay electrode 41.

  Since the comparative example 3 has a configuration in which the pixel electrode 31 is in contact with the second contact portion 41b as in the present embodiment, the pixel electrode 31 and the second relay electrode 41 are electrically connected satisfactorily. Can be made.

  However, the dimension of the contact hole 72 and the dimension of the contact hole 73 in the comparative example 3 are W2, the dimension of the contact hole 72 and the dimension of the contact hole 73 in the present embodiment are W1, and the comparative example 3 is the present embodiment. Compared with the contact hole 72, the contact hole 72 and the contact hole 73 are larger. Therefore, in Comparative Example 3, the area of the contact portion is increased and the area of the light emitting portion (opening 71) is reduced as compared with the present embodiment, so that the display becomes dark.

  Therefore, the configuration of this embodiment, that is, the contact holes 72, 73, 75 are formed with a small dimension W1 corresponding to the process limit, and the second relay electrode 41 is the fourth in the contact hole 75 and around the contact hole 75. The contact hole 75 is located on at least a part of the insulating film 64, and the contact holes 72 and 73 are on the second relay electrode 41 and do not overlap with the recess 81 in plan view. The structure of being located in is preferable.

"Method for manufacturing organic EL elements"
FIG. 12 is a process flow showing the method for manufacturing the organic EL element according to this embodiment. FIGS. 13 to 15 are diagrams corresponding to FIG. 7 and are schematic cross-sectional views showing the state of the organic EL element after the main steps of the process flow shown in FIG.
Hereinafter, a method for manufacturing the organic EL element 30 according to the present embodiment will be described with reference to FIGS.

  As shown in FIG. 12, in the method for manufacturing the organic EL element 30 according to this embodiment, the step of forming the reflective electrode 35 and the first insulating film 61 (Step S1) and the step of forming the second insulating film 62 ( Step S2), step of forming buried insulating film 40 (Step S3), step of forming third insulating film 63 (Step S4), step of forming fourth insulating film 64 (Step S5), contact The step of forming the hole 75 (Step S6), the step of forming the second relay electrode 41 (Step S7), the step of forming the fifth insulating film 65 (Step S8), and the step of forming the contact hole 72 (Step S9), a step of forming the sixth insulating film 66 (Step S10), a step of forming the contact holes 72 and 73 (Step S11), and a step of forming the pixel electrode 31 (Step S10). Tsu includes a flop S12), the.

  Steps S1, S2, S4, and S5 are examples of the “step of forming an insulating layer on the reflective electrode”. Step S6 is an example of a “step of forming a first contact hole”. Step S7 is an example of a “step of forming a contact electrode”. Steps S8 and S10 are an example of a “process for forming an optical adjustment layer” in the organic EL element 30R. Step S10 is an example of a “process for forming an optical adjustment layer” in the organic EL element 30G. Steps S9 and S11 are an example of a “step of forming a second contact hole” in the organic EL element 30R. Step S11 is an example of a “step of forming a second contact hole” in the organic EL element 30G.

  In step S1, as shown in FIG. 13A, an Al alloy made of Al and Ti is deposited on the substrate 11 by using, for example, a sputtering method, and then a silicon oxide film is deposited by using, for example, a plasma CVD method. To do. Subsequently, the silicon oxide film and the Al alloy are continuously etched using, for example, a dry etching method, and a reflective electrode 35 made of an Al alloy and a first insulating film 61 made of a silicon oxide film are formed on the substrate 11. Are formed in order.

  The reflective electrode 35 and the first insulating film 61 are patterned in the same shape, and are island-shaped in each of the pixel 20R (organic EL element 30R), the pixel 20G (organic EL element 30G), and the pixel 20B (organic EL element 30B). It is formed. Further, a first groove 74 is formed between the reflective electrode 35 and the first insulating film 61 of the pixel 20 and the reflective electrode 35 and the first insulating film 61 of the adjacent pixel 20.

  In step S2, as shown in FIG. 13B, a silicon nitride film is deposited by using, for example, a plasma CVD method to form a second insulating film 62 made of a silicon nitride film. The second insulating film 62 is formed so as to cover the surface of the first insulating film 61 and the first groove 74. A second groove 77 reflecting the shape of the first groove 74 is formed inside the first groove 74 by the second insulating film 62 covering the first groove 74.

  In step S3, as shown in FIG. 13C, a silicon oxide film is deposited using, for example, a plasma CVD method. A silicon oxide film thicker than the depth of the second groove 77 is deposited so that the silicon oxide film is filled (embedded) in the second groove 77. The silicon oxide film is formed so as to cover the surface of the second insulating film 62 and the second groove 77. Subsequently, a planarization process is performed on the silicon oxide film by, for example, CMP (Chemical Mechanical Polishing), and the embedded insulating film 40 is formed (embedded) in the second trench 77. Further, the buried insulating film 40 and the second insulating film 62 form a flat surface.

  Note that the silicon oxide film is anisotropically etched in the Z (−) direction by using, for example, a dry etching method to form the buried insulating film 40 in the second trench 77, and the buried insulating film 40 and the second A flat surface with the insulating film 62 may be formed. That is, the planarization process may be performed by a dry etching method.

  In step S4, as shown in FIG. 13D, a silicon nitride film is deposited by using, for example, a plasma CVD method, and a third insulating film 63 covering the surface of the second insulating film 62 and the surface of the buried insulating film 40 is formed. Form.

  In step S5, as shown in FIG. 14A, a silicon oxide film is deposited by using, for example, a plasma CVD method, and a fourth insulating film 64 covering the surface of the third insulating film 63 is formed.

  In step S6, as shown in FIG. 14B, the first insulating film 61, the second insulating film 62, the third insulating film 63, and the fourth insulating film 64 are etched using, for example, a dry etching method. The contact holes 75 that penetrate through the first insulating film 61, the second insulating film 62, the third insulating film 63, and the fourth insulating film 64 and reach the reflective electrode 35 are formed in the pixel 20R (organic EL element 30R) and the pixel 20G (organic EL). It is formed in each of the element 30G) and the pixel 20B (organic EL element 30B).

  In step S7, a TiN film is deposited using, for example, a sputtering method, and then the TiN film is patterned using, for example, a dry etching method, so that the pixel 20R (organic EL element 30R), the pixel 20G (organic EL element 30G), and A second relay electrode 41 is formed on each pixel 20B (organic EL element 30B).

  The fourth insulating film 64 protects the third insulating film 63 so that the third insulating film 63 is not attacked when the TiN film is patterned. Further, the fourth insulation projecting from the second relay electrode 41 by using, for example, a dry etching method so that the fourth insulation film 64 is disposed between the second relay electrode 41 and the third insulation film 63. The film 64 is removed by etching.

As a result, as shown in FIG. 14C, the second relay electrode 41 covering the contact hole 75 and at least a part of the fourth insulating film 64 around the contact hole 75 is formed. Further, a recess 81 reflecting the shape of the contact hole 75 is formed inside the contact hole 75 by the second relay electrode 41 covering the contact hole 75.
In other words, step S <b> 7 is a step of forming the recess 81 of the second relay electrode 41 in the contact hole 75.

  In step S8, as shown in FIG. 14D, for example, a silicon oxide film is deposited using, for example, a plasma CVD method, and the fifth insulating film covering the surface of the third insulating film 63 and the surface of the second relay electrode 41 is formed. 65 is formed.

  In step S9, as shown in FIG. 15A, the fifth insulating film 65 is patterned using, for example, a dry etching method to form the fifth insulating film 65 straddling the organic EL elements 30R arranged in the Y direction. . At the same time, a contact hole 72 exposing the second relay electrode 41 of the organic EL element 30R is formed. That is, in step S9, a contact hole 72 that penetrates the fifth insulating film 65 and reaches the second relay electrode 41 is formed in each of the organic EL elements 30R.

  In step S10, as shown in FIG. 15B, a silicon oxide film is deposited by using, for example, a plasma CVD method, the surface of the fifth insulating film 65, the surface of the third insulating film 63, and the second relay electrode 41. A sixth insulating film 66 is formed to cover the surface.

In step S11, as shown in FIG. 15C, the sixth insulating films 66 of the organic EL elements 30B arranged in the Y direction are removed by etching using, for example, a dry etching method, and the organic EL arranged in the Y direction. A sixth insulating film 66 straddling the element 30R and the organic EL element 30G arranged in the Y direction is formed.
At the same time, a contact hole 72 that exposes the second relay electrode 41 of the organic EL element 30R and a contact hole 73 that exposes the second relay electrode 41 of the organic EL element 30G are formed.

In step S11, in the organic EL element 30R, a contact hole 72 that penetrates the sixth insulating film 66 is formed at the same position as the contact hole 72 that penetrates the fifth insulating film 65 formed in step S9. That is, in step S9 and step S11, in the organic EL element 30R, the contact hole 72 that penetrates the fifth insulating film 65 and the sixth insulating film 66 and exposes the second relay electrode 41 is formed on the second relay electrode 41. And it forms in the position which does not overlap with the recessed part 81 by planar view.
Therefore, step S9 and step S11 are steps for forming the contact hole 72 in the organic EL element 30R at a position that does not overlap the recess 81 in plan view.

Furthermore, in step S11, in the organic EL element 30G, the contact hole 73 exposing the second relay electrode 41 disposed at least in part around the contact hole 75 is formed on the second relay electrode 41, It is formed at a position that does not overlap with the recess 81 in plan view.
Therefore, step S11 is a process of forming the contact hole 73 in the organic EL element 30G at a position that does not overlap the recess 81 in plan view.

  In step S12, as shown in FIG. 15D, an ITO film is deposited by using, for example, a sputtering method, and then the ITO film is patterned by using, for example, a dry etching method to obtain a pixel 20R (organic EL element 30R), A pixel electrode 31 is formed on each of the pixel 20G (organic EL element 30G) and the pixel 20B (organic EL element 30B).

  In the organic EL element 30 </ b> R, the pixel electrode 31 is electrically connected to the second relay electrode 41 through the contact hole 72. Since the contact hole 72 is located on the second relay electrode 41 so as not to overlap the recess 81 in plan view, the pixel electrode 31 covers the contact hole 72 compared to the case where the contact hole 72 overlaps the recess 81 in plan view. The necessary step becomes smaller, and problems such as disconnection of the pixel electrode 31 and increased resistance at the step portion are less likely to occur, and the pixel electrode 31 and the second relay electrode 41 can be stably electrically connected.

  In the organic EL element 30G, the pixel electrode 31 is electrically connected to the second relay electrode 41 through the contact hole 73. Since the contact hole 73 is located on the second relay electrode 41 and does not overlap with the recess 81 in plan view, the pixel electrode 31 covers the contact hole 73 compared to the case where the contact hole 73 overlaps with the recess 81 in plan view. The necessary step becomes smaller, and problems such as disconnection of the pixel electrode 31 and increased resistance at the step portion are less likely to occur, and the pixel electrode 31 and the second relay electrode 41 can be stably electrically connected.

  In the organic EL element 30 </ b> B, the pixel electrode 31 is formed so as to cover the second relay electrode 41. That is, the pixel electrode 31 is in direct contact with the second relay electrode 41 and is stably electrically connected to the second relay electrode 41.

  As described above, the organic EL device 100 is less prone to problems such as disconnection of the pixel electrode 31 and increased resistance in the stepped portion, less likely to have point defects or dot unevenness (brightness unevenness in dot units) of the organic EL element 30, A high-quality display can be provided. Furthermore, the organic EL device 100 can provide a high-luminance display because the area of the light emitting portion of the organic EL element 30 is increased, the luminance of light emitted from the organic EL element 30 is increased.

(Embodiment 2)
FIG. 16 is a schematic diagram illustrating a configuration of a head mounted display according to the second embodiment.
As illustrated in FIG. 16, the head mounted display 1000 is an example of an “electronic device” and includes two display units 1001 provided corresponding to the left and right eyes. The observer M can see characters and images displayed on the display unit 1001 by wearing the head mounted display 1000 on the head like glasses. For example, if an image in consideration of parallax is displayed on the left and right display units 1001, a stereoscopic video can be viewed and enjoyed.

  The display unit 1001 uses the organic EL device 100 described above. The organic EL device 100 can provide a high-quality and high-luminance display. Therefore, by mounting the organic EL device 100 on the display unit 1001, a head-mounted display 1000 with a high-quality and high-luminance display can be provided.

In addition, this invention is not necessarily limited to the thing of the said embodiment, A various change can be added in the range which does not deviate from the meaning of this invention.
Specifically, the electro-optical device to which the present invention is applied is not limited to the organic EL device 100 including the organic EL element 30 as the light-emitting element described above, and is, for example, a self-luminous type such as an inorganic EL element or an LED. The present invention can be widely applied to an electro-optical device including a light emitting element.

  In addition, the electronic device to which the present invention is applied is not limited to the above-described head mounted display 1000, and the present invention may be applied, for example, to a display unit such as a head-up display, an electronic viewfinder of a digital camera, a portable information terminal, or a navigator. An electronic apparatus using an electro-optical device to which is applied can be given.

  DESCRIPTION OF SYMBOLS 10 ... Element substrate, 11 ... Substrate, 12 ... Scanning line, 14 ... Data line, 6, 8, 19 ... Power supply line, 20, 20B, 20G, 20R ... Pixel, 21 ... Capacitor, 28 ... First relay electrode, DESCRIPTION OF SYMBOLS 29 ... Protective insulating film 30, 30B, 30G, 30R ... Organic EL element, 31 ... Pixel electrode, 32 ... Light emitting functional layer, 33 ... Counter electrode, 35 ... Reflective electrode, 40 ... Embedded insulating film, 41 ... Second Relay electrode, 41a ... first contact portion, 41b ... second contact portion, 50, 50B, 50G, 50R ... color filter layer, 61 ... first insulating film, 62 ... second insulating film, 63 ... third insulation Membrane, 64 ... fourth insulating film, 65 ... fifth insulating film, 66 ... sixth insulating film, 68 ... adjustment layer, 70 ... protective substrate, 71 ... opening, 72 ... contact hole, 73 ... contact hole, 74 ... first 1 groove, 75 ... contact hole, 7 ... second groove, 81 ... concave portion, 100 ... organic EL device, 101 ... data line driving circuit, 102 ... scan line driver circuit, 103 ... external connection terminal, 110 ... pixel circuits.

Claims (5)

The reflective electrode, the insulating layer, the optical adjustment layer, the first electrode, the light emitting layer, and the second electrode are sequentially stacked.
A contact electrode that electrically connects the reflective electrode and the first electrode;
A first contact hole penetrating the insulating layer;
A second contact hole penetrating the optical adjustment layer;
Including
The contact electrode is located in at least a portion of the first contact hole and on the insulating layer around the first contact hole, and has a recess in the first contact hole;
The light emitting element, wherein the second contact hole is located on the contact electrode and at a location that does not overlap the concave portion in plan view. The first electrode has a first side and a second side longer than the first side,
2. The light emitting device according to claim 1, wherein the first contact hole and the second contact hole are arranged in a direction along the first side.   An electro-optical device comprising the light-emitting element according to claim 1.   An electronic apparatus comprising the electro-optical device according to claim 3. A reflection electrode, an insulating layer, an optical adjustment layer, a first electrode, a light emitting layer, and a second electrode are stacked, and the contact electrically connects the reflection electrode and the first electrode. A method of manufacturing a light emitting device including an electrode,
Forming the insulating layer on the reflective electrode;
Forming a first contact hole through the insulating layer;
Forming a contact electrode on at least a part of the insulating layer in the first contact hole and around the first contact hole;
Forming an optical adjustment layer on the insulating layer and the contact electrode;
Forming a second contact hole penetrating the optical adjustment layer;
Including
In the step of forming the contact electrode, a recess of the contact electrode is formed in the first contact hole,
In the step of forming the second contact hole, the second contact hole is formed on the contact electrode at a position that does not overlap the concave portion in plan view.

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