JP2014022091A - Organic el device, method for manufacturing organic el device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a compact organic EL device capable of improving light-emission characteristics, and also to provide a method for manufacturing the organic EL device and an electronic apparatus.SOLUTION: An organic EL device includes: a pixel electrode 24 provided on a substrate; a common electrode 25 arranged opposite to the pixel electrode 24; a functional layer arranged between the pixel electrode 24 and the common electrode 25 and capable of obtaining white light-emission; an intermediate layer 46 laminated on the common electrode 25; and an interference filter 50 laminated on the intermediate layer 46. The interference filter 50 includes: a pair of dielectric mirror layers 51, 52; and a translucent spacer layer 53 held between the pair of the dielectric mirror layers 51, 52.

Description

  The present invention relates to an organic EL device, a method for manufacturing an organic EL device, and an electronic apparatus.

  The organic EL (electroluminescence) device has a structure in which a light emitting layer made of a light emitting material is sandwiched between a pixel electrode and a common electrode. In order to realize color display, for example, a vacuum deposition method in which a light emitting material that selectively emits light corresponding to red (R), green (G), and blue (B) is selectively deposited to form a light emitting layer, It is known to use an inkjet method in which a light emitting layer is formed by selectively applying a solution containing a light emitting material. However, it is very difficult to selectively form each of the R, G, and B light-emitting layers as the pixels become finer.

  Further, for example, a method of realizing color display by providing a white light emitting element on the element substrate side and providing a color filter on the counter substrate side is known. However, high positional accuracy is required for bonding the element substrate and the counter substrate, and it is still difficult to cope with pixel miniaturization.

  Thus, for example, as described in Patent Document 1, an on-chip color filter structure in which a color filter is formed on an element substrate is known. According to this, the pixel can be miniaturized without being affected by the bonding accuracy of the pair of substrates.

JP 2009-48063 A

  However, a high temperature of about 200 ° C. is required to form the color filter. When forming the color filter on the element substrate, the organic EL element previously formed on the element substrate is damaged due to the difference in process temperature. In addition, there is a problem that proper light emission may not be obtained from the organic EL element.

  An aspect of the present invention has been made to solve at least a part of the above problems, and can be realized as the following forms or application examples.

  Application Example 1 An organic EL device according to this application example includes a substrate, a first electrode provided on the substrate, a second electrode disposed to face the first electrode, the first electrode, and the first electrode. An organic light emitting layer arranged between the second electrode and capable of obtaining white light emission; an intermediate layer stacked on the second electrode; and an interference filter stacked on the intermediate layer, the interference filter comprising: And a pair of mirror layers and a translucent spacer layer sandwiched between the pair of mirror layers.

  According to this application example, since monochromatic light other than white can be generated at least by the organic light emitting layer, the intermediate layer, and the interference filter that can obtain white light emission, it is caused by the difference in process temperature as in the case of using a color filter. Thus, it is possible to reduce damage to the organic light emitting layer, and it is possible to suppress deterioration in display quality such as luminance due to the process temperature.

  Application Example 2 In the organic EL device according to the application example described above, it is preferable that a light emitting element including the first electrode, the second electrode, and the organic light emitting layer has an optical resonance structure.

  According to this application example, since the light emitting element having the optical resonance structure is provided, light having a resonance wavelength can be extracted from the light emitting element. Furthermore, since this light is emitted through the interference filter, the color reproducibility of the emitted light can be improved.

  Application Example 3 In the organic EL device according to the application example, it is preferable that the pair of mirror layers is formed of a dielectric multilayer film.

  According to this application example, since the dielectric multilayer film is used, it is possible to transmit a specific wavelength component with a high transmittance as compared with the metal mirror, and it is possible to improve the color purity of light. . Further, by changing the number of pairs of dielectric multilayer films to increase the reflectance, it becomes possible to change the transmission wavelength region, and to control the spectral characteristics.

  Application Example 4 In the organic EL device according to the application example, it is preferable that the interference filter is a solid etalon.

  According to this application example, since the solid etalon is provided, it is possible to emit light condensed in the front direction, and it is possible to extract light emission of a desired color. In addition, since the solid etalon can be formed at a low temperature of, for example, about room temperature, it is possible to suppress a decrease in the light emission lifetime of the light emitting element.

  Application Example 5 The organic EL device according to the application example described above includes a first sub-pixel that emits red light, a second sub-pixel that emits green light, and a third sub-pixel that emits blue light. In the spacer layer, it is preferable that at least one of the first subpixel, the second subpixel, and the third subpixel in the spacer layer has a different thickness.

  According to this application example, since the film thickness of at least one pixel in the spacer layer is different, the thickness of the interference filter can be made different in at least one region. Therefore, it is possible to selectively transmit each color light, and it is possible to improve the color reproducibility of light emission.

  Application Example 6 In the method of manufacturing an organic EL device according to this application example, a first electrode, an organic light emitting layer that can obtain white light emission, and a second electrode are sequentially formed on a substrate to form a light emitting element. A light emitting element forming step to be formed; an intermediate layer forming step of forming an intermediate layer on the second electrode; and a first mirror layer forming a first mirror layer which is one of a pair of mirror layers on the intermediate layer Forming step, forming a spacer layer on the first mirror layer, and forming a second mirror layer forming the second mirror layer, which is the other of the pair of mirror layers, on the spacer layer. And a process.

  According to this application example, it is possible to generate monochromatic light other than white by forming an organic light emitting layer, an intermediate layer, a first mirror layer, a spacer layer, and a second mirror layer that can obtain at least white light emission. As in the case of using, it is possible to reduce the damage to the organic light emitting layer due to the difference in process temperature, and it is possible to suppress the deterioration of display quality such as luminance due to the process temperature. .

  Application Example 7 In the method for manufacturing an organic EL device according to the application example, the spacer layer forming step includes a first spacer layer that transmits red light, a second spacer layer that transmits green light, and blue light. It is preferable to form a transparent third spacer layer.

  According to this application example, the wavelength component of each color can be transmitted by each spacer layer, so that color display can be performed without using a color filter.

  Application Example 8 In the method for manufacturing an organic EL device according to the application example, it is preferable that the light emitting element has an optical resonance structure including an optical resonator.

  According to this application example, since the light emitting element having the optical resonance structure is formed, the light emitted from the light emitting element can be spectrally divided into substantially RGB. Furthermore, since this light is transmitted through the interference filter, the color reproducibility of the emitted light can be improved.

  Application Example 9 In the method of manufacturing an organic EL device according to the application example, the first mirror layer forming step and the second mirror layer forming step use a dielectric multilayer film to form the first mirror layer and the first mirror layer. It is preferable to form two mirror layers.

  According to this application example, since the dielectric multilayer film is formed, a specific wavelength component can be transmitted, and the color purity of light can be improved. Further, the spectral characteristics can be controlled by increasing the reflectance by changing the number of pairs of dielectric multilayer films.

  Application Example 10 An electronic apparatus according to this application example includes the organic EL device described above.

  According to this application example, since the above-described organic EL device is provided, an electronic apparatus capable of improving display quality can be provided.

The equivalent circuit diagram which shows the structure of an organic electroluminescent apparatus. The schematic plan view which shows the structure of an organic electroluminescent apparatus. The schematic cross section which shows the structure of an organic electroluminescent apparatus. The schematic diagram which shows the structure of an interference filter. The graph which shows the reflective characteristic of an interference filter. The graph which shows the transmission characteristic in a green pixel. The graph which shows the relationship between the number of pairs of a dielectric mirror layer, and a transmission spectrum half value width. The chart which shows the coefficient which enables the spectrum of RGB. The schematic cross section which shows the manufacturing method of an organic electroluminescent apparatus in order of a process. The schematic cross section which shows the manufacturing method of an organic electroluminescent apparatus in order of a process. The perspective view which shows the structure of the head mounted display provided with the organic EL apparatus. The schematic cross section which shows the structure of the organic electroluminescent apparatus of a modification. The graph which shows the permeation | transmission characteristic of the organic electroluminescent apparatus of a modification.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized. In the present embodiment, an organic EL device having a top emission structure will be described as an example.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

<Configuration of organic EL device>
FIG. 1 is an equivalent circuit diagram showing an electrical configuration of the organic EL device. FIG. 2 is a schematic plan view showing the configuration of the organic EL device. Hereinafter, the configuration of the organic EL device will be described with reference to FIGS. 1 and 2.

  As shown in FIG. 1, the organic EL device 11 according to the present embodiment includes a plurality of scanning lines 12, a plurality of data lines 13 extending in a direction intersecting the scanning lines 12, and a plurality extending in parallel with the data lines 13. Power supply line 14. An area partitioned by the scanning lines 12 and the data lines 13 is configured as a pixel area. The data line 13 is connected to the data line driving circuit 15. The scanning line 12 is connected to the scanning line driving circuit 16.

  Each pixel region holds a switching TFT (Thin Film Transistor) 21 to which a scanning signal is supplied to the gate electrode via the scanning line 12 and a pixel signal supplied from the data line 13 via the switching TFT 21. A storage capacitor 22 (capacitor) is provided, and a driving TFT 23 (hereinafter referred to as “TFT element 23”) to which a pixel signal held by the storage capacitor 22 is supplied to the gate electrode is provided.

  Further, in each pixel region, when electrically connected to the power supply line 14 via the TFT element 23, the pixel electrode 24 as the first electrode into which the drive current flows from the power supply line 14 and the common as the second electrode An electrode 25 and a functional layer 26 sandwiched between the pixel electrode 24 and the common electrode 25 are provided.

  The organic EL device 11 includes a plurality of light emitting elements 27 including pixel electrodes 24, common electrodes 25, and functional layers 26. In addition, the organic EL device 11 includes a display area composed of a plurality of light emitting elements 27.

  According to this configuration, when the scanning line 12 is driven and the switching TFT 21 is turned on, the potential of the data line 13 at that time is held in the holding capacitor 22, and the TFT element 23 depends on the state of the holding capacitor 22. ON / OFF state is determined. Then, a current flows from the power supply line 14 to the pixel electrode 24 through the channel of the TFT element 23, and further a current flows to the common electrode 25 through the functional layer 26. The functional layer 26 emits light with a luminance corresponding to the amount of current flowing therethrough.

  As shown in FIG. 2, the organic EL device 11 includes a display region 32 (a region inside the one-dot chain line in the drawing) and a non-display region 33 (a region outside the one-dot chain line) on the first base material 31 made of glass or the like. It has the composition which has. The display area 32 is provided with an actual display area 32a (area inside the two-dot chain line) and a dummy area 32b (area outside the two-dot chain line in the figure).

  In the actual display area 32a, sub-pixels 34 (light emitting areas) from which light is emitted are arranged in a matrix. Each of the sub-pixels 34 emits light of R (red), G (green), and B (blue) in accordance with the operation of the switching TFT 21 and the TFT element 23 (both see FIG. 1). Yes.

  In the dummy area 32b, a circuit for mainly causing each sub-pixel 34 to emit light is provided. For example, the scanning line driving circuit 16 is disposed along the left side and the right side of the actual display region 32a in the drawing, and the inspection circuit 35 is disposed along the upper side of the actual display region 32a in the drawing.

  A flexible substrate 36 is provided on the lower side of the first base material 31. The flexible substrate 36 is provided with a driving IC 37 connected to each wiring. Although not shown, the driving IC 37 is also connected to the data line driving circuit 15 (see FIG. 1).

  FIG. 3 is a schematic cross-sectional view showing the structure of the organic EL device. Hereinafter, the structure of the organic EL device will be described with reference to FIG. FIG. 3 shows the cross-sectional positional relationship of each component and is represented on a scale that can be clearly shown.

  As shown in FIG. 3, the organic EL device 11 includes an element substrate 41, and a second substrate 61 bonded through the element substrate 41 and a protective layer 54.

  The element substrate 41 has a reflective layer 43, an insulating layer 44, a pixel electrode 24, a hole transport layer (not shown), a white organic light emitting layer 45, and an electron transport layer (not shown) on a first base material 31 as a substrate. 2), the common layer 25, and the intermediate layer 46 are laminated in this order. The filter substrate 42 has a first dielectric mirror layer 51, a spacer layer 53, a second dielectric mirror layer 52, and a protective layer 54 that form a pair of mirror layers on the intermediate layer 46. The second base material 61 is laminated in this order.

  The organic EL device 11 is a so-called top emission type light emitting device configured to extract light emitted from the white organic light emitting layer 45 from the second substrate 61 side. The observer observes the display from the second base material 61 side. Among the above elements, elements formed from the pixel electrode 24 to the common electrode 25 and formed for each of the sub-pixels 34R, 34G, and 34B correspond to the light emitting element 27.

  The first base material 31 is made of, for example, translucent glass or silicon (Si). On the 1st base material 31, the TFT element 23 grade | etc., Is provided using a well-known technique.

The reflective layer 43 is made of Al, Al alloy (Al / Nd, Al / Cu, etc.), Ag alloy (Ag / Pd, Ag / Mg, Ag / C, Ag / Pd, Cu, etc.). An insulating layer 44 made of SiN or the like for preventing a short circuit between the reflective layer 43 and the pixel electrode 24 is disposed on the reflective layer 43. The insulating layer 44 is not limited to SiN, and SiO ₂ , SiON, Ta ₂ O ₅ , TiO ₂ or the like may be used. The pixel electrode 24 is a transparent electrode made of ITO (Indium Tin Oxide) or IZO.

  One pixel electrode 24 is arranged for each of the red sub-pixel 34R (first sub-pixel), the green sub-pixel 34G (second sub-pixel), and the blue sub-pixel 34B (third sub-pixel). The pixel electrode 24 is connected to a power supply line (not shown) through the TFT element 23. The common electrode 25 is a half mirror formed by thinly forming an Ag alloy or an Ag / Mg alloy, and has both light reflectivity and light transmissivity.

  Between the pixel electrode 24 and the common electrode 25, a hole transport layer (not shown), a white organic light emitting layer 45, and an electron transport layer (not shown) are laminated in this order. The white organic light emitting layer 45 is a layer of an organic light emitting material that exhibits an electroluminescence phenomenon. By applying a voltage between the pixel electrode 24 and the common electrode 25, holes are injected into the white organic light emitting layer 45 from the hole transport layer and electrons are injected from the electron transport layer, so that the white organic light emitting layer Light emission occurs when these recombine at 45.

  A part of the light from the white organic light emitting layer 45 is directly transmitted through the common electrode 25, and a part of the light is reflected by the reflective layer 43 and then transmitted through the common electrode 25. In any case, the light from the white organic light emitting layer 45 passes through the common electrode 25, and then passes through the interference filter 50, the protective layer 54, and the second substrate 61 in this order.

  Here, the reflective layer 43 and the common electrode 25 constitute a so-called optical resonator. For this reason, the light emitted from the white organic light emitting layer 45 reciprocates between the reflective layer 43 and the common electrode 25, and only the light having the resonance wavelength is extracted from the second substrate 61 side. Therefore, light having a spectrum with a high peak intensity and a narrow width can be extracted, and the color reproducibility of light emitted by the organic EL device 11 can be improved.

  The resonance wavelength can be adjusted by changing the length of the optical resonator. In the organic EL device 11 of the present embodiment, the length of the optical resonator is adjusted by changing the thickness of the insulating layer 44.

  More specifically, the length of the optical resonator and the resonance wavelength are increased in this order by the configuration in which the insulating layer 44 is thinned in this order in the sub-pixels 34R, 34G, and 34B. Accordingly, the resonance wavelength is set to a wavelength corresponding to red in the sub-pixel 34R, green in the sub-pixel 34G, and blue in the sub-pixel 34B. As a result, red, green, or blue light is selectively emitted from the common electrode 25 according to the resonance wavelength.

The intermediate layer 46 formed so as to cover the common electrode 25 is composed of, for example, at least one layer of epoxy resin, SiO ₂ , SiON, SiN, and Al ₂ O ₃ , and protects the light emitting element 27 and has optical resonance. It fills and smoothes the steps of the common electrode formed by forming the vessel.

  In addition, the intermediate layer 46 has a predetermined value in order to prevent light from resonating between the interference filter 50 provided on the intermediate layer 46 and the optical resonator provided for each of the sub-pixels 34R, 34G, and 34B. It is provided with a thickness.

An interference filter 50 is provided on the intermediate layer 46. The interference filter 50 has a configuration in which a spacer layer 53 is sandwiched between a pair of mirrors (51, 52). Specifically, a first dielectric mirror layer 51 made of a dielectric mirror constituting a pair of mirrors is provided on the intermediate layer 46. Examples of the dielectric mirror include a laminated structure (dielectric multilayer film) of SiO ₂ / TiO ₂ type, SiO ₂ / Ta ₂ O ₅ type, or the like.

A spacer layer 53 is provided on the first dielectric mirror layer 51. Examples of the spacer layer 53 include SiO ₂ , acrylic resin, and epoxy resin.

On the spacer layer 53, a second dielectric mirror layer 52 constituting a pair of mirrors is provided. Similar to the first dielectric mirror layer 51, the second dielectric mirror layer 52 has a laminated structure of SiO ₂ / TiO ₂ system, SiO ₂ / Ta ₂ O ₅ system, or the like.

  A protective layer 54 is provided on the second dielectric mirror layer 52. Examples of the material of the protective layer 54 include an epoxy resin.

  A second base material 61 is provided on the protective layer 54. As with the first base material 31, the second base material 61 is made of translucent glass, silicon (Si), or the like.

  The interference filter 50 is a member for obtaining transmitted light of a specific color by transmitting a specific wavelength component of incident light. By disposing the interference filter 50, the color purity of the light extracted from the light emitting element 27 is improved.

  FIG. 4 is a schematic diagram showing the configuration of the interference filter. FIG. 5 is a graph showing the reflection characteristics of the dielectric mirror layer constituting the interference filter. FIG. 6 is a graph showing the transmission characteristics of the interference filter in the green sub-pixel. FIG. 7 is a graph showing the relationship between the number of pairs of dielectric mirror layers and the half width of the transmission spectrum. FIG. 8 is a chart showing coefficients that enable RGB spectroscopy. Hereinafter, the configuration of the interference filter will be described with reference to FIGS.

  As shown in FIG. 4, the interference filter 50 is a band-pass filter that can control filter characteristics (spectral characteristics) by controlling reflectance, and includes a first dielectric mirror layer 51 and a second dielectric. A mirror layer 52 and a spacer layer 53 sandwiched between the dielectric mirror layers 51 and 52 are included. The interference filter 50 is a so-called solid etalon filter.

  The first dielectric mirror layer 51 is provided below the interference filter 50 (on the intermediate layer 46 side). The second dielectric mirror layer 52 is provided on the upper side (protective layer 54 side) of the interference filter 50. The first dielectric mirror layer 51 and the second dielectric mirror layer 52 have a laminated structure of a high refractive index layer H having a high refractive index and a low refractive index layer L having a low refractive index.

The respective film thicknesses dH and dL can be obtained by equation (1). nH and nL are the refractive indexes of the high refractive index layer and the low refractive index layer, respectively. λ ₀ is the design wavelength.

For example, when the dielectric mirror layers 51 and 52 are configured as in Expression (2) and the film thickness of each layer is adjusted so that λ ₀ is 530 nm, the reflection characteristics as shown in FIG. 5 can be obtained. The material at this time is, for example, TiO ₂ as the high refractive index layer H. The low refractive index layer L is, for example, SiO ₂ . The film thickness dH of the high refractive index layer H is, for example, 58 nm. The film thickness dL of the low refractive index layer L is, for example, 88 nm. The number of pairs of the high refractive index layer H and the low refractive index layer L is 2.5 pairs (p = 2).

By changing the design wavelength λ ₀ , the reflection characteristics of the dielectric mirror layers 51 and 52 can be changed. In the reflection characteristics of the dielectric mirror, the design wavelength is the wavelength having the highest reflectivity.

The spacer layer 53 is a low refractive index layer L. The film thickness dS of the spacer layer 53 can be obtained by Expression (3). Further, the transmission wavelength λ _p can be changed by changing the value of x.

  For example, when the spacer layer 53 having a refractive index nS and a film thickness dS such that x = 2 is sandwiched, transmission characteristics for the green sub-pixel 34G as shown in FIG. 6 can be obtained.

  At this time, the number of pairs of dielectric mirror layers 51 and 52 is preferably 1.5 to 3.5 pairs. This is because, as shown in the graph of FIG. 7, the full width at half maximum decreases with an increase in the number of pairs, so that the panel brightness is significantly lowered in the dielectric mirror layer of 3.5 pairs or more.

In addition, λ ₀ is desirably 500 nm to 550 nm. This is a necessary condition for splitting the RGB wavelength band with the common dielectric mirror layers 51 and 52, and by setting x to the range shown in FIG. 8, it is possible to split in the RGB wavelength band. Become.

  For example, red (R) light can be extracted by setting the value of x to 2.8 to 3.2. By setting the value of x to 1.9 to 2.1, green (G) light can be extracted. Blue (B) light can be extracted by setting the value of x to 0.9 to 1.4.

  The intermediate layer 46 desirably has a thickness of 2 μm or more. This is to suppress interference between the microcavity structure of the light emitting element 27 and the interference filter 50.

<Method for manufacturing organic EL device>
9 and 10 are schematic cross-sectional views showing the method of manufacturing the organic EL device in the order of steps. Hereinafter, a method for manufacturing the organic EL device will be described with reference to FIGS. The manufacturing process for forming various wirings, electric driving TFTs, and the like is the same as a well-known process, so the description thereof will be omitted or simplified here, and the subsequent processes will be described in detail.

  First, in the step (light emitting element forming step) shown in FIG. 9A, the light emitting element 27 is formed. Specifically, using a known manufacturing method, on the first base material 31, the reflective layer 43, the insulating layer 44 having a different film thickness for each sub-pixel region in order to obtain the optical resonance structure, the pixel electrode 24 are formed in order.

  Next, the white organic light emitting layer 45 is formed on the entire first base material 31 on which the pixel electrode 24 is formed by using a vapor deposition method. Thereafter, the common electrode 25 is formed on the white organic light emitting layer 45 using the same vapor deposition method.

Next, in the step (intermediate layer forming step) shown in FIG. 9B, the intermediate layer 46 is formed. Specifically, on the common electrode 25, for example, an intermediate layer 46 composed of at least one of epoxy resin, SiO ₂ , SiON, SiN, and Al ₂ O ₃ is formed by a wet method (spin coating method, printing). Etc.) or a dry method (evaporation method, sputtering method, CVD method, ion plating method, etc.).

Next, in the step shown in FIG. 9C (first mirror layer forming step), the first dielectric mirror layer 51 is formed. Specifically, a first dielectric mirror layer 51 made of SiO ₂ / TiO ₂ system, SiO ₂ / Ta ₂ O ₅ system or the like is formed on the intermediate layer 46 by vapor deposition or sputtering.

Next, in the step (spacer layer forming step) shown in FIG. 10A, the spacer layer 53 having a different thickness is formed in each subpixel 34. Specifically, a spacer layer 53 made of SiO ₂ , acrylic resin, epoxy resin or the like is formed on the first dielectric mirror layer 51. The film thickness steps corresponding to the sub-pixels 34R, 34G, and 34B are formed by using, for example, a photolithography method and an etching method (dry etching). Moreover, you may make it form using a nanoimprint method.

  Note that the spacer layer 53 in the region of the red sub-pixel 34R is referred to as a first spacer layer. The spacer layer 53 in the area of the green sub-pixel 34G is referred to as a second spacer layer. The spacer layer 53 in the blue sub-pixel 34B region is referred to as a third spacer layer.

  As described above, the organic EL device 11 according to the present embodiment is formed by applying a temperature of about 110 ° C. to the organic EL device 11 which has been conventionally applied to the organic EL device 11 to form the color filter layer. Therefore, it is possible to prevent the light emitting element 27 from being damaged. Thereby, appropriate light emission can be performed.

Next, in the step shown in FIG. 10B (second mirror layer forming step), the second dielectric mirror layer 52 is formed. Specifically, the second dielectric mirror layer 52 made of SiO ₂ / TiO ₂ system, SiO ₂ / Ta ₂ O ₅ system or the like is formed on the spacer layer 53 by, for example, vapor deposition or sputtering.

  Thereafter, the protective layer 54 and the second base material 61 are formed on the second dielectric mirror layer 52 to complete the organic EL device 11.

<Electronic equipment>
Next, a head mounted display as an electronic apparatus according to the present embodiment will be described with reference to FIG. FIG. 11 is a perspective view showing a configuration of a head-mounted display including the above-described organic EL device.

  As shown in FIG. 11, a head mounted display 2000 as an electronic apparatus according to the present embodiment includes a display unit 2001 using the organic EL device 11 described above.

  According to such a head mounted display 2000, since the organic EL device 11 is used as the display unit 2001, it is possible to perform appropriate light emission and cope with downsizing.

  In addition, as an electronic device on which the organic EL device 11 is mounted, in addition to the head-mounted display 2000, a head-up display, a smartphone, an EVF (Electrical View Finder), a mobile mini projector, a mobile phone, a mobile computer, a digital camera, a digital video It can be used for various electronic devices such as cameras, displays, in-vehicle devices, audio devices, exposure devices, and lighting devices.

  As described above in detail, according to the organic EL device 11, the manufacturing method of the organic EL device 11, and the electronic apparatus of the present embodiment, the following effects can be obtained.

  (1) According to the organic EL device 11 of the present embodiment, at least the monochromatic light (red light, green light, non-white light) by the functional layer 26, the intermediate layer 46, and the interference filter (solid etalon) 50 capable of obtaining white light emission. Blue light) can be generated, so that it is possible to reduce damage to the functional layer (organic light-emitting layer) due to the difference in process temperature, as in the case of using a color filter. Therefore, it is possible to suppress a decrease in display quality such as luminance.

  (2) According to the organic EL device 11 of the present embodiment, since the light emitting element 27 having the optical resonance structure is provided, light having a resonance wavelength can be extracted from the light emitting element 27. Furthermore, since this light is emitted through the interference filter 50, the color reproducibility of the emitted light can be improved.

  (3) According to the organic EL device 11 of this embodiment, since the dielectric mirror layers 51 and 52 are composed of dielectric multilayer films, it is possible to transmit a specific wavelength component, and the color purity of light Can be improved. Further, in the dielectric mirror layers 51 and 52, it is possible to change the transmission wavelength by changing the number of pairs of dielectric multilayer films to increase the reflectance, and the spectral characteristics can be controlled.

  (4) According to the organic EL device 11 of the present embodiment, by providing the intermediate layer 46 between the light emitting element 27 and the interference filter 50, the microcavity structure and the interference filter 50 made on-chip are provided. Can be made incoherent (non-resonant), and optical design can be simplified, material selection, and process flexibility can be improved.

  (5) According to the method of manufacturing the organic EL device 11 of the present embodiment, the monochromatic light other than white (by forming the functional layer 26, the intermediate layer 46, and the interference filter (solid etalon) 50 that at least emits white light ( (Red light, green light, blue light) can be generated, and it is possible to reduce damage to the functional layer 26 (organic light emitting layer) due to the difference in process temperature, as in the case of using a color filter. Accordingly, it is possible to suppress the display quality such as luminance from being deteriorated due to the process temperature. In addition, since the light emitting element 27 having the optical resonance structure is formed, the light emitted from the light emitting element 27 can be split into substantially RGB. Furthermore, since this light is transmitted through the interference filter 50, the color reproducibility of the emitted light can be improved. In addition, since the dielectric multilayer film is formed as the dielectric mirror layers 51 and 52, it is possible to transmit a specific wavelength component and to improve the color purity of light. Further, the spectral characteristics can be controlled by increasing the reflectance by changing the number of pairs of dielectric multilayer films.

  (6) According to the electronic apparatus of the present embodiment, since the above-described organic EL device 11 is provided, the light condensed in the front direction can be emitted, and the display quality (front luminance, etc.) can be improved. It is possible to provide an electronic device (head-mounted display 2000) that can be used.

  The aspect of the present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. It is included in the range. Moreover, it can also implement with the following forms.

(Modification 1)
As described above, the interference filter is not limited to changing the thickness of the spacer layer 53 for each of the sub-pixels 34R, 34G, and 34B, and may be configured as shown in FIG. FIG. 12 is a schematic cross-sectional view showing the structure of a modified organic EL device. In the organic EL device shown in FIG. 12, in the spacer layer 153 constituting the interference filter 150, the red sub-pixel 34R and the blue sub-pixel 34B have the same film thickness.

Specifically, the dielectric mirror layers 151 and 152 are configured under the following conditions. λ ₀ is 530 nm. The high refractive index layer H is TiO ₂ . The low refractive index layer L is SiO ₂ . The number of pairs is 2.5 pairs (i = 2). X = 2.9. If the interference filter 150 is configured under such conditions, a transmission peak can be obtained in the wavelength band of blue (B) as well as red (R) as shown in FIG. FIG. 13 is a graph showing the transmission characteristics of a modified organic EL device.

  In the case of an organic EL device having a microcavity structure as in this modification, the color light incident on the interference filter 150 is generally dimmed to the colors of the RGB sub-pixels 34R, 34G, and 34B. Therefore, as in the transmission characteristics of FIG. 13, the red (R) and blue (B) sub-pixels can be used in common.

  In addition to this, as long as a transmission peak can be obtained in the wavelength band of each color, the spacer layer 53 may be configured to have the same thickness without changing the thickness.

(Modification 2)
As described above, the formation of the spacer layer 53 having a different thickness for each sub-pixel 34 is not limited to using the photolithography technique and the etching technique. For example, by forming the film three times using a mask. You may make it form.

(Modification 3)
As described above, the transmissive organic EL device 11 has been described as an example, but may be applied to a reflective organic EL device. Further, the organic EL device 11 is not limited to the top emission structure, and may be applied to a bottom emission structure organic EL device.

(Modification 4)
As described above, the arrangement of the sub-pixels is not limited to the stripe arrangement, and a mosaic arrangement or a delta arrangement may be used.

(Modification 5)
As described above, the resonance structure (microcavity structure) of the light emitting element 27 changes the optical path length between the reflective layer 43 and the common electrode 25 by changing the film thickness of the insulating layer 44 for each subpixel. For example, the optical path length between the reflective layer 43 and the common electrode 25 may be changed by changing the thickness of the pixel electrode 24.

(Modification 6)
As described above, the pair of dielectric mirror layers 51 and 52 constituting the interference filter 50 is not limited to being formed of a dielectric multilayer film. For example, an Ag-based semi-reflective mirror (Ag / pd, Ag / Mg, Ag / C, APC, etc.) or a composite mirror of an Ag-based and dielectric multilayer film.

(Modification 7)
As described above, the present invention is not limited to the structure in which the TFT 21 or the like is provided on the first base material 31 made of glass or the like. For example, the present invention may be applied to a structure in which a field effect transistor is provided on a silicon substrate.

  DESCRIPTION OF SYMBOLS 11 ... Organic EL device, 12 ... Scan line, 13 ... Data line, 14 ... Power supply line, 15 ... Data line drive circuit, 16 ... Scan line drive circuit, 21 ... Switching TFT, 22 ... Retention capacitance, 23 ... TFT element , 24 ... Pixel electrode as the first electrode, 25 ... Common electrode as the second electrode, 26 ... Functional layer, 27 ... Light emitting element, 31 ... First substrate as substrate, 32 ... Display region, 32a ... Actual display Area 32b ... dummy area 33 ... non-display area 34, 34R, 34G, 34B ... sub-pixel 35 ... inspection circuit 36 ... flexible substrate 37 ... driving IC 41 ... element substrate 42 ... filter substrate DESCRIPTION OF SYMBOLS 43 ... Reflective layer, 44 ... Insulating layer, 45 ... White organic light emitting layer, 46 ... Intermediate | middle layer, 50, 150 ... Interference filter, 51, 151 ... 1st dielectric mirror layer which comprises a pair of mirror layers, 52, 15 ... second dielectric mirror layers constituting the pair of mirror layers, 53, 153 ... spacer layer, 54 ... protective layer, 61 ... second substrate, 2000 ... head-mounted display, 2001 ... display unit.

Claims (10)

A substrate,
A first electrode provided on the substrate;
A second electrode disposed opposite to the first electrode;
An organic light emitting layer that is disposed between the first electrode and the second electrode and obtains white light emission;
An intermediate layer laminated on the second electrode;
An interference filter laminated on the intermediate layer,
The interference filter includes an organic EL device including a pair of mirror layers and a translucent spacer layer sandwiched between the pair of mirror layers. The organic EL device according to claim 1,
An organic EL device, wherein a light emitting element including the first electrode, the second electrode, and the organic light emitting layer has an optical resonance structure. The organic EL device according to claim 1 or 2,
The pair of mirror layers is composed of a dielectric multilayer film, and is an organic EL device. An organic EL device according to any one of claims 1 to 3,
The organic EL device, wherein the interference filter is a solid etalon. An organic EL device according to any one of claims 1 to 4,
A first sub-pixel that emits red light; a second sub-pixel that emits green light; and a third sub-pixel that emits blue light;
The organic EL device according to claim 1, wherein the spacer layer has a thickness of at least one sub-pixel of the first sub-pixel, the second sub-pixel, and the third sub-pixel different in the spacer layer. A light emitting element formation step of forming a light emitting element by sequentially forming a first electrode, an organic light emitting layer capable of obtaining white light emission, and a second electrode on a substrate;
An intermediate layer forming step of forming an intermediate layer on the second electrode;
A first mirror layer forming step of forming a first mirror layer which is one of a pair of mirror layers on the intermediate layer;
A spacer layer forming step of forming a spacer layer on the first mirror layer;
A second mirror layer forming step of forming a second mirror layer, which is the other of the pair of mirror layers, on the spacer layer;
A method for producing an organic EL device, comprising: It is a manufacturing method of the organic EL device according to claim 6,
The spacer layer forming step includes forming a first spacer layer that transmits red light, a second spacer layer that transmits green light, and a third spacer layer that transmits blue light. Device manufacturing method. It is a manufacturing method of the organic EL device according to claim 6 or 7,
The method of manufacturing an organic EL device, wherein the light emitting element has an optical resonance structure including an optical resonator. It is a manufacturing method of the organic EL device according to any one of claims 6 to 8,
The method of manufacturing an organic EL device, wherein in the first mirror layer forming step and the second mirror layer forming step, the first mirror layer and the second mirror layer are formed using a dielectric multilayer film.   An electronic apparatus comprising the organic EL device according to any one of claims 1 to 5.

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