JP2016219199A - Method for manufacturing organic EL device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic EL device, capable of improving display quality.SOLUTION: A method for manufacturing an organic EL device includes the steps of: forming an organic EL element on a base material; forming a sealing layer so as to cover the organic EL element; and forming a sealing layer protective film 41 so as to cover the sealing layer, by a laminate molding method.SELECTED DRAWING: Figure 7

Description

  The present invention relates to a method for manufacturing an organic EL device.

  The organic EL (electroluminescence) device has a light emitting element in which a light emitting layer (functional layer) made of an organic light emitting material is sandwiched between an anode (pixel electrode) and a cathode (counter electrode). For example, as described in Patent Document 1, the organic EL device includes a light emitting layer, a cathode, a cathode protective layer (first sealing layer), an organic buffer layer (flattening layer), a gas barrier layer (second sealing layer) from the substrate side. (Stopping layer) are arranged in this order.

  In the method of manufacturing the organic EL device, a cathode is formed on a substrate, and a cathode protective layer, an organic buffer layer, and a gas barrier layer (and a color filter) are sequentially formed on the cathode. Next, the organic EL device is completed by bonding the element substrate formed up to the gas barrier layer and a protective substrate made of a glass substrate or the like through an adhesive layer.

JP 2014-89804 A

  However, when the element substrate and the protective substrate are bonded to each other, foreign substances (for example, glass fragments) attached to the protective substrate may be sandwiched and damage the gas barrier layer. Accordingly, there is a problem that display quality deteriorates such that moisture enters from the gas barrier layer, the cathode is corroded, and dark spots are generated. In addition, when foreign matter is mixed, there is a problem in that light that comes into contact with the foreign matter during transmission is scattered, resulting in poor display.

  An aspect of the present invention has been made to solve at least a part of the above problems, and can be realized as the following forms or application examples.

  Application Example 1 An organic EL device manufacturing method according to this application example includes a step of forming an organic EL element on a substrate, a step of forming a sealing layer so as to cover the organic EL element, and the sealing And a step of forming a protective film using an additive manufacturing method so as to cover the layer.

  According to this application example, after forming the sealing layer, the layered manufacturing method is used to form the protective film so as to cover the sealing layer and protect the sealing layer. A bonding step of bonding the substrate on which the sealing layer is formed and the protective glass can be omitted. Therefore, when bonding, a foreign material (for example, broken piece of protective glass) can be prevented from adhering to the substrate on which the sealing layer is formed. Thereby, it is possible to prevent the sealing layer from being damaged due to the inclusion of the foreign matter and prevent moisture and the like from entering from the damage, and high display quality can be maintained. In addition, it is possible to prevent display defects such as light scattering due to the inclusion of foreign matter.

  Application Example 2 In the method for manufacturing an organic EL device according to the application example, the method includes a step of forming a color filter on the sealing layer after the step of forming the sealing layer, In the forming step, the protective film is preferably formed so as to cover the sealing layer and the color filter.

  According to this application example, since the color filter is formed on the sealing layer, for example, an organic EL element capable of obtaining white light emission and a colored layer of red (R), green (G), and blue (B) are provided. Color display can be performed by combining with a color filter including the color filter.

  Application Example 3 In the method for manufacturing an organic EL device according to the application example, the thickness of the protective film is preferably 0.05 mm to 5 mm.

  According to this application example, since the protective film having a thickness of 0.05 mm to 5 mm is formed, the sealing layer can be protected from external factors, and damage to the sealing layer can be suppressed. . As a result, it is possible to prevent display quality from being deteriorated due to intrusion of moisture or the like from the sealing layer.

  Application Example 4 In the method for manufacturing an organic EL device according to the application example, the layered modeling method is preferably an optical modeling method.

  According to this application example, since the protective film is formed using the stereolithography, the protective film can be formed by a relatively simple method, for example, by curing the resin that becomes the protective film by irradiating ultraviolet rays. it can.

FIG. 2 is an equivalent circuit diagram illustrating an electrical configuration of the organic EL device according to the embodiment. 1 is a schematic plan view showing the configuration of an organic EL device. 1 is a schematic cross-sectional view showing the overall structure of an organic EL device. The flowchart which shows the manufacturing method of an organic electroluminescent apparatus. The schematic sectional drawing which shows a one part manufacturing process among the manufacturing methods of an organic electroluminescent apparatus. The schematic sectional drawing which shows a one part manufacturing process among the manufacturing methods of an organic electroluminescent apparatus. The schematic sectional drawing which shows a one part manufacturing process among the manufacturing methods of an organic electroluminescent apparatus. Schematic which shows the structure of the head mounted display as an electronic device.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following forms, for example, “on the substrate” is described, and unless otherwise specified, when arranged so as to be in contact with the substrate, or disposed on the substrate via other components. Or a case where a part is disposed on the substrate and a part is disposed via another component.

<Organic EL device>
First, the organic EL device of the present embodiment will be described with reference to FIGS. FIG. 1 is an equivalent circuit diagram showing the electrical configuration of the organic EL device of the present embodiment, FIG. 2 is a schematic plan view showing the configuration of the organic EL device of the present embodiment, and FIG. 3 shows the overall structure of the organic EL device. It is a schematic sectional drawing.

  As shown in FIG. 1, the organic EL device 100 according to this embodiment includes a plurality of scanning lines 12 and a plurality of data lines 13 that intersect each other, and a plurality of power supply lines 14 that are parallel to each of the plurality of data lines 13. And have. It has a scanning line driving circuit 16 to which a plurality of scanning lines 12 are connected, and a data line driving circuit 15 to which a plurality of data lines 13 are connected. In addition, a plurality of sub-pixels 18 are arranged in a matrix corresponding to each intersection of the plurality of scanning lines 12 and the plurality of data lines 13.

  The sub pixel 18 includes an organic EL element 30 as a light emitting element and a pixel circuit 20 that controls driving of the organic EL element 30.

  The organic EL element 30 includes a pixel electrode 31, a counter electrode 33 as a common electrode, and a functional layer 32 as an organic light emitting layer provided between the pixel electrode 31 and the counter electrode 33. Such an organic EL element 30 can be electrically expressed as a diode. As will be described in detail later, the counter electrode 33 is formed as a common cathode across the plurality of sub-pixels 18.

  The pixel circuit 20 includes a switching transistor 21, a storage capacitor 22, and a driving transistor 23. The two transistors 21 and 23 can be configured using, for example, an n-channel or p-channel thin film transistor (TFT) or a MOS transistor.

  The gate of the switching transistor 21 is connected to the scanning line 12, one of the source or drain is connected to the data line 13, and the other of the source or drain is connected to the gate of the driving transistor 23.

  One of the source and drain of the driving transistor 23 is connected to the pixel electrode 31 of the organic EL element 30, and the other of the source and drain is connected to the power supply line 14. A storage capacitor 22 is connected between the gate of the driving transistor 23 and the power supply line 14.

  When the scanning line 12 is driven and the switching transistor 21 is turned on, the potential based on the image signal supplied from the data line 13 at that time is held in the storage capacitor 22 via the switching transistor 21.

  The on / off state of the driving transistor 23 is determined according to the potential of the storage capacitor 22, that is, the gate potential of the driving transistor 23. When the driving transistor 23 is turned on, a current corresponding to the gate potential flows from the power supply line 14 to the functional layer 32 sandwiched between the pixel electrode 31 and the counter electrode 33 via the driving transistor 23. The organic EL element 30 emits light according to the amount of current flowing through the functional layer 32.

  As shown in FIG. 2, the organic EL device 100 has an element substrate 10. The element substrate 10 is provided with a display area E0 (indicated by a one-dot chain line in the drawing) and a non-display area E3 outside the display area E0. The display area E0 has an actual display area E1 (indicated by a two-dot chain line in the figure) and a dummy area E2 surrounding the actual display area E1.

  In the actual display area E1, sub-pixels 18 as light-emitting pixels are arranged in a matrix. The sub-pixel 18 includes the organic EL element 30 as described above, and any one of blue (B), green (G), and red (R) in accordance with the operation of the switching transistor 21 and the driving transistor 23. The light emission of the color is obtained.

  In the present embodiment, the sub-pixels 18 that can emit light of the same color are arranged in the first direction, and the second direction in which the sub-pixels 18 that can emit light of different colors intersect (orthogonal) the first direction. The so-called stripe-type sub-pixels 18 are arranged in an array. Hereinafter, the first direction is referred to as the Y direction, and the second direction is referred to as the X direction. The arrangement of the sub-pixels 18 on the element substrate 10 is not limited to the stripe method, and may be a mosaic method or a delta method.

  The dummy area E2 is provided with a peripheral circuit mainly for causing the organic EL elements 30 of the sub-pixels 18 to emit light. For example, as shown in FIG. 2, a pair of scanning line driving circuits 16 are provided extending in the Y direction at positions sandwiching the actual display area E1 in the X direction. An inspection circuit 17 is provided between the pair of scanning line driving circuits 16 at a position along the actual display area E1.

  A flexible circuit board (FPC) 43 for electrical connection with an external drive circuit is connected to one side (the lower side in the figure) parallel to the X direction of the element substrate 10. A driving IC 44 connected to the peripheral circuit on the element substrate 10 side through the wiring of the FPC 43 is mounted on the FPC 43. The driving IC 44 includes the data line driving circuit 15 described above, and the data line 13 and the power supply line 14 on the element substrate 10 side are electrically connected to the driving IC 44 via the FPC 43.

  Between the display area E0 and the outer edge of the element substrate 10, that is, in the non-display area E3, for example, a wiring 29 for applying a potential to the counter electrode 33 of the organic EL element 30 of each subpixel 18 is formed. The wiring 29 is provided on the element substrate 10 so as to surround the display area E0 except for the side portion of the element substrate 10 to which the FPC 43 is connected.

  Next, the structure of the organic EL device will be described with reference to FIG. FIG. 3 is a schematic cross-sectional view schematically showing the structure of the organic EL device. The organic EL device in the present embodiment is a so-called “top emission structure” organic EL device.

  As shown in FIG. 3, in the organic EL device 100, wiring, a driving transistor 23 (see FIG. 1) and the like are provided on a base material 11 as a substrate, and a pixel electrode 31 is provided thereon. Further, a functional layer 32 having an organic light emitting layer or the like is provided on the pixel electrode. The functional layer 32 is covered with a counter electrode 33 that functions as a cathode.

  The portion where the functional layer 32 is sandwiched between the pixel electrode 31 and the counter electrode 33 is the organic EL element 30.

  On the counter electrode 33, a sealing layer 34 is formed over the counter electrode 33 and the base material 11. On the sealing layer 34, a color filter 36 is formed so as to substantially overlap the region of the functional layer 32 in plan view. Note that the plan view refers to a case where the organic EL device 100 is viewed from a direction perpendicular to the surface of the base material 11. On the color filter 36, a sealing layer protective film 41 as a protective film is provided.

  Since the organic EL device 100 is a top emission type, the substrate 11 can be a transparent substrate such as glass or an opaque substrate such as silicon or ceramics.

  The wiring and the driving transistor 23 formed on the base material 11 are covered with an insulating layer 26. A contact hole (not shown) is formed in the insulating layer 26, and the pixel electrode 31 is electrically connected to the driving transistor 23. On the insulating layer 26, a planarizing insulating layer 27 in which a reflective layer 25 made of an aluminum alloy or the like is provided is formed.

  Light emitted from the functional layer 32 is reflected by the reflective layer 25 and passes through the color filter 36 to be taken out from the sealing layer protective film 41 side (the side opposite to the base material 11).

  On the planarization insulating layer 27, an organic EL element 30 including a pixel electrode 31, a functional layer 32, and a counter electrode 33 is formed. Further, an insulating pixel partition wall 28 is disposed so as to partition the organic EL element 30.

  The pixel electrode 31 is formed using a transparent conductive film such as ITO (Indium Tin Oxide). In the case where the reflective layer 25 is not provided for each subpixel 18, the pixel electrode 31 may be formed using aluminum having light reflectivity or an alloy thereof.

  The functional layer 32 is formed using a vapor phase process such as a vacuum deposition method or an ion plating method so as to be in contact with each pixel electrode 31.

  The functional layer 32 includes, for example, a hole injection layer, a hole transport layer, an organic light emitting layer, and an electron transport layer. In the present embodiment, a functional layer 32 is formed by forming a hole injection layer, a hole transport layer, an organic light emitting layer, and an electron transport layer on the pixel electrode 31 by using a vapor phase process and sequentially stacking them. Is formed. The layer configuration of the functional layer 32 is not limited to this, and may include an intermediate layer that controls the movement of holes and electrons that are carriers.

  The organic light emitting layer may be configured to obtain white light emission. For example, an organic light emitting layer capable of obtaining red light emission, an organic light emitting layer capable of obtaining green light emission, and an organic light emitting layer capable of obtaining blue light emission; It is possible to adopt a combination of the above.

  A counter electrode 33 is formed to cover the functional layer 32. The counter electrode 33 is formed, for example, by forming a film of an alloy of Mg and Ag with a thickness sufficient to obtain light transmissivity and light reflectivity. Thereby, a plurality of organic EL elements 30 are completed.

  In addition, an optical resonator is configured between the reflective layer 25 and the counter electrode 33 for each of the sub-pixels 18R, 18G, and 18B by forming the counter electrode 33 in a state having light transmittance and light reflectivity. Also good.

  Next, a sealing layer 34 that covers the plurality of organic EL elements 30 is formed so that water, oxygen, and the like do not enter. The sealing layer 34 of the present embodiment is formed by laminating a cathode protective layer 34a, an organic buffer layer 34b, and a gas barrier layer 34c in this order from the counter electrode 33 side.

  The end portion of the organic buffer layer 34b is formed so as to be outside the end portion of the functional layer 32 and inside the end portions of the cathode protective layer 34a and the gas barrier layer 34c in plan view. The end of the color filter 36 is formed so as to be outside the end of the functional layer 32 and inside the end of the gas barrier layer 34c in plan view. The end portion of the sealing layer protective film 41 is formed so as to be outside the end portion of the gas barrier layer 34c in plan view.

The cathode protective layer 34a is preferably made of a silicon-based material having light permeability and excellent gas barrier properties, such as silicon oxynitride (SiON). Note that SiO ₂ may be used. The film thickness of the cathode protective layer 34a is, for example, about 200 nm.

  An organic buffer layer 34b is provided on the cathode protective layer 34a. The organic buffer layer 34b is disposed so as to fill the uneven portion of the cathode protective layer 34a formed in an uneven shape due to the influence of the shape of the pixel partition wall 28 and the like, and its upper surface is formed substantially flat. The organic buffer layer 34b has a function of relieving stress generated by warping or volume expansion of the element substrate 10 and preventing the cathode protective layer 34a from peeling from the pixel partition 28 having an unstable shape.

  Further, since the upper surface of the organic buffer layer 34b is substantially flattened, the gas barrier layer 34c made of a hard film formed on the organic buffer layer 34b is also flattened. Accordingly, there is no portion where stress is concentrated, and the occurrence of cracks in the gas barrier layer 34c is prevented. Further, the unevenness is filled by covering the pixel partition wall 28, which is effective in improving the film thickness uniformity of the black matrix 36a and the colored layers 36R, 36G, and 36B formed on the gas barrier layer 34c.

  The organic buffer layer 34b can be formed using, for example, an epoxy resin or a coating-type inorganic material (such as silicon oxide) having excellent thermal stability. Further, if the organic buffer layer 34b is formed by screen printing, the surface of the organic buffer layer 34b can be flattened. That is, the organic buffer layer 34b can also function as a flattening layer that relieves unevenness on the surface of the cathode protective layer 34a. The thickness of the organic buffer layer 34b is about 2 μm.

  The gas barrier layer 34c is for preventing oxygen and moisture from entering, and thereby, deterioration of the organic EL element 30 due to oxygen and moisture can be suppressed. As the gas barrier layer 34c, it is preferable to use a silicon-based material having light permeability and excellent gas barrier properties, such as silicon oxynitride (SiON).

  A color filter 36 is formed on the gas barrier layer 34c. Specifically, each color coloring layer 36 (red color layer 36R, green color layer 36G, blue color layer 36B) constituting the color filter 36 and a black matrix 36a are formed between the color color layers.

  The black matrix 36a is, for example, a light shielding layer made of a resin mixed with a pigment such as carbon black. In order to perform appropriate color conversion, light between adjacent pixel regions of the colored layers 36R, 36G, and 36B described above is used. This is to prevent leakage.

  A sealing layer protective film 41 is formed on the color filter 36, the gas barrier layer 34 c, and the entire substrate 11. The sealing layer protective film 41 is made of, for example, a transparent resin. Examples of the transparent resin include an epoxy resin and an acrylic resin that are cured by ultraviolet rays.

  The sealing layer protective film 41 replaces the conventional adhesive layer, sealing material, and counter substrate. That is, there is no counter substrate. Then, the organic EL device 100 is completed at the stage where the sealing layer protective film 41 is formed (including the dividing step).

  As described above, the formation range of the sealing layer protective film 41 is outside the end of the gas barrier layer 34c (cathode protective layer 34a). As a method for forming the sealing layer protective film 41, a layered modeling method such as an optical modeling method can be used, although details will be described later. The film thickness of the sealing layer protective film 41 is, for example, in the range of 0.05 mm to 5 mm.

  Thus, since the organic EL device 100 is completed without using the protective glass (counter substrate), it occurs due to the foreign matter adhered when the protective glass and the substrate 11 side are bonded together as in the prior art. Display defects such as scattered light can be prevented. Furthermore, it is possible to prevent display defects from occurring due to damage to the gas barrier layer 34c. As a result, initial display defects can be reduced, and yield and reliability can be improved.

<Method for manufacturing organic EL device>
Next, a method for manufacturing the organic EL device of this embodiment will be described with reference to FIGS. FIG. 4 is a flowchart showing a method for manufacturing the organic EL device. 5 to 7 are schematic cross-sectional views illustrating some of the manufacturing steps in the method for manufacturing the organic EL device.

  As shown in FIG. 4, the manufacturing method of the organic EL device 100 of this embodiment includes a cathode protective layer forming step (step S11), an organic buffer layer forming step (step S12), and a gas barrier layer forming step (step S13). And a color filter forming step (step S14) and a sealing layer protective film forming step (step S15). As a method for forming the driving transistor 23, the organic EL element 30, and the like on the substrate 11, a known method can be adopted.

  Therefore, in FIGS. 5 to 7, the display of the configuration of the driving transistor 23 and the organic EL element 30 on the base material 11 is omitted. Hereinafter, the manufacturing method of the characteristic part of the present invention will be mainly described.

  First, as shown in FIG. 4, in step S <b> 11, the cathode protective layer 34 a is formed so as to cover the counter electrode 33. Specifically, as shown in FIG. 5A, a cathode protective layer 34a made of silicon oxynitride (SiON) or the like is formed on the base material 11 on which the counter electrode 33 is formed.

  Examples of the method for forming the cathode protective layer 34a include a vacuum deposition method and a sputtering method. The film thickness of the cathode protective layer 34a is, for example, about 200 nm.

  In step S12, the organic buffer layer 34b is formed. Specifically, as shown in FIG. 5B, the organic buffer layer 34b is formed on the cathode protective layer 34a by using, for example, a screen printing method. The organic buffer layer 34b is, for example, an epoxy resin. The film thickness of the organic buffer layer 34b is, for example, about 2 μm.

  In step S13, the gas barrier layer 34c is formed. Specifically, as shown in FIG. 5C, the gas barrier layer 34c is formed on the organic buffer layer 34b by using, for example, a vacuum deposition method or a sputtering method. The material of the gas barrier layer 34c is, for example, silicon oxynitride (SiON). The film thickness of the gas barrier layer 34c is, for example, approximately 200 nm to 400 nm.

  In addition, although the high gas barrier property is realizable by making the film thickness of the cathode protective layer 34a and the gas barrier layer 34c thick, it is easy to produce a crack by expansion | swelling and shrinkage | contraction on the other hand. Therefore, it is preferable to control the film thickness to about 200 nm to 400 nm.

  In step S14, the color filter 36 is formed. Specifically, as shown in FIG. 6D, first, a black matrix 36a is formed on the gas barrier layer 34c. As a manufacturing method of the black matrix 36a, the material liquid of the black matrix 36a is applied to the surface of the gas barrier layer 34c by, for example, an inkjet method in an air atmosphere. Next, the material liquid of the black matrix 36a is dried and cured.

  Next, as shown in FIG. 6E, colored layers 36R, 36G, and 36B are formed on the element substrate 10 on which the black matrix 36a is formed. Specifically, the material liquid of each of the colored layers 36R, 36G, and 36B is applied by an ink jet method between the regions where the black matrix 36a is formed on the surface of the gas barrier layer 34c in an air atmosphere. Next, the element substrate 10 coated with the material liquid for the colored layers 36R, 36G, and 36B is dried and cured, so that the colored layers 36R, 36G, and 36B corresponding to the sub-pixels 18R, 18G, and 18B of the respective colors are formed. The color filter 36 is completed.

  In step S15, the sealing layer protective film 41 is formed. Specifically, this will be described with reference to FIG. As described above, the sealing layer protective film 41 is formed using an optical modeling method which is one of the layered modeling methods. In addition, the figure shown in FIG. 7 has shown the case where the process is performed to the large sized substrate 100a with which the some organic EL apparatus 100 was surface-mounted.

  In the step shown in FIG. 7A, the first ultraviolet irradiation is performed. First, the large substrate 100 a formed up to the color filter 36 is placed on the modeling stage 51, and the large substrate 100 a is fixed using the fixing jig 52. Next, the large substrate 100a is placed in the liquid tank in which the ultraviolet irradiation type liquid resin 53 is stored.

  Next, the height of the modeling stage 51 is adjusted so that the upper surface of the large substrate 100 a is so high as to be immersed in the liquid resin 53. Thereafter, the liquid resin 53 is cured by irradiating the place where the organic EL device 100 is formed with an ultraviolet laser. Thereby, the first sealing layer protective film 41a is formed.

  In the step shown in FIG. 7B, the height of the modeling stage 51 is lowered so that the height of the first sealing layer protective film 41a is lowered. Next, as described above, the place where the organic EL device 100 is to be irradiated with ultraviolet laser. Thereby, the second sealing layer protective film 41a is formed. Thereafter, the second and subsequent layers are formed in the same manner as described above. Thereby, as shown in FIG.7 (c), the sealing layer protective film 41 formed by lamination | stacking is completed.

  In order to prevent damage to the organic EL element 30 due to the ultraviolet laser, for example, an ultraviolet absorbing layer is formed in advance between any of the layers between the counter electrode 33 (cathode) and the gas barrier layer 34c. Is desirable.

Examples of the ultraviolet absorbing layer include zinc oxide (ZnO), titanium oxide (TiO ₂ ), strontium titanate (SrTiO ₃ ), tungsten oxide (WO ₃ ), tin oxide (SnO ₂ ), and niobium oxide (Nb ₂ O _6). ), Potassium tantalate (KTaO ₃ ), iron oxide (FeO ₃ ) and the like.

  The thickness of the ultraviolet absorbing layer is preferably 10 nm or more. However, as the film thickness increases, the light transmittance deteriorates. Therefore, it is preferable to set the film thickness according to the required quality.

  Thereafter, the large substrate 100a is cut into the size of each organic EL device 100, thereby completing the organic EL device 100 as shown in FIG.

  Thus, since the organic EL device 100 is completed without using the protective glass (counter substrate), it is caused by the foreign matter adhering when the protective glass and the substrate 11 side are bonded together as in the past. Display defects such as generated scattered light can be prevented. Furthermore, it is possible to prevent display defects from occurring due to damage to the gas barrier layer 34c. As a result, initial display defects can be reduced, and yield and reliability can be improved.

<Electronic equipment>
Next, the electronic apparatus of this embodiment will be described with reference to FIG. FIG. 8 is a schematic diagram illustrating a configuration of a head mounted display (HMD) as an electronic apparatus.

  As shown in FIG. 8, the head mounted display 1000 includes the organic EL device 100, and is large enough to be held by a user's hand with a main body 115 having a shape like glasses. A control unit 200 having a thickness.

  The main body 115 and the control unit 200 are connected to be communicable by wire or wireless. In the present embodiment, the main body 115 and the control unit 200 are communicably connected via a cable 300. The main body 115 and the control unit 200 communicate image signals and control signals via the cable 300.

  The main body 115 includes a right-eye display unit 115A and a left-eye display unit 115B. The right-eye display unit 115A includes an image forming unit 120A that forms image light of a right-eye image. The left-eye display unit 115B includes an image forming unit 120B that forms image light of a left-eye image.

  The image forming unit 120 </ b> A is housed in the eyeglass-shaped body portion 115 in the vine portion (right side) of the eyeglasses. On the other hand, the image forming unit 120B is accommodated in a vine portion (left side) of the spectacle-type main body 115.

  The main body 115 is provided with a viewing portion 131A having light transparency. The visual recognition unit 131A emits the image light of the right-eye image toward the right eye of the user. Further, in the head mounted display 1000, the visual recognition part 131A has light permeability, and the surroundings can be visually recognized through the visual recognition part 131A.

  The main body 115 is provided with a viewing portion 131B having light transparency. The visual recognition unit 131B emits image light of the left-eye image toward the left eye of the user. Moreover, in the head mounted display 1000, the visual recognition part 131B has light transmittance, and the surroundings can be visually recognized through the visual recognition part 131B.

  The control unit 200 includes an operation unit 210 and an operation button unit 220. The user inputs an operation to the operation unit 210 and the operation button unit 220 of the control unit 200 and gives an instruction to the main body unit 115.

  According to such an electronic device, since the organic EL device 100 is provided, a highly reliable electronic device can be provided.

  In addition to the head-mounted display 1000, the electronic device on which the organic EL device 100 is mounted includes, for example, a head-up display (HUD), a projector, a smartphone, an EVF (Electrical View Finder), a mobile phone, a mobile computer, a digital It can be used for various electronic devices such as cameras, digital video cameras, in-vehicle devices, and lighting devices.

  As described above in detail, according to the method for manufacturing the organic EL device 100 of the present embodiment, the following effects can be obtained.

  (1) According to the manufacturing method of the organic EL device 100 of the present embodiment, after forming the sealing layer 34 and the color filter 36, the sealing layer protection is performed so as to cover the sealing layer 34 using an optical modeling method. Since the film | membrane 41 is formed and the sealing layer 34 is protected, the bonding process like the case where the base material 11 in which the sealing layer 34 was formed, and protective glass is bonded together is abbreviate | omitted, for example. be able to. Therefore, when bonding, a foreign material (for example, broken piece of protective glass) can be prevented from adhering to the base material 11 on which the sealing layer 34 is formed. As a result, it is possible to prevent the sealing layer 34 from being damaged due to the inclusion of the foreign matter, and to prevent moisture and the like from entering from the damage, thereby maintaining high display quality. In addition, it is possible to prevent display defects such as light scattering due to the inclusion of foreign matter.

  (2) According to the manufacturing method of the organic EL device 100 of the present embodiment, since the sealing layer protective film 41 having a thickness of 0.05 mm to 5 mm is formed, the sealing layer 34 can be protected from external factors. It becomes possible, and it can suppress that damage is given to sealing layer 34. As a result, it is possible to suppress deterioration in display quality due to intrusion of moisture or the like from the sealing layer 34.

  The aspect of the present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. It is included in the range. Moreover, it can also implement with the following forms.

(Modification 1)
As described above, the optical modeling method is used as a method of forming the sealing layer protective film 41, but the present invention is not limited thereto, and other methods may be used among the layered modeling methods.

  DESCRIPTION OF SYMBOLS 10 ... Element board | substrate, 11 ... Base material as a board | substrate, 12 ... Scanning line, 13 ... Data line, 14 ... Power supply line, 15 ... Data line drive circuit, 16 ... Scanning line drive circuit, 17 ... Inspection circuit, 18 and 18R , 18G, 18B ... sub-pixel, 20 ... pixel circuit, 21 ... transistor, 22 ... storage capacitor, 23 ... driving transistor, 25 ... reflection layer, 26 ... insulating layer, 27 ... flattened insulating layer, 28 ... pixel partition, DESCRIPTION OF SYMBOLS 29 ... Wiring, 30 ... Organic EL element, 31 ... Pixel electrode, 32 ... Functional layer, 33 ... Counter electrode, 34 ... Sealing layer, 34a ... Cathode protective layer, 34b ... Organic buffer layer, 34c ... Gas barrier layer, 36 ... Colored layer, 36B ... Blue colored layer, 36G ... Green colored layer, 36R ... Red colored layer, 36a ... Black matrix, 41, 41a ... Sealing layer protective film as protective film, 43 ... FPC, 44 ... Drive IC, 51 Modeling stage 52 ... Fixing jig 100 ... Organic EL device 100a ... Large substrate 115 ... Body part 115A ... Right eye display part 115B ... Left eye display part 120A, 120B ... Image forming part 131A, 131B DESCRIPTION OF SYMBOLS ... Visual recognition part, 200 ... Control part, 210 ... Operation part, 220 ... Operation button part, 300 ... Cable, 1000 ... Head mounted display.

Claims (4)

Forming an organic EL element on the substrate;
Forming a sealing layer so as to cover the organic EL element;
Forming a protective film using an additive manufacturing method so as to cover the sealing layer;
A method for producing an organic EL device, comprising: It is a manufacturing method of the organic EL device according to claim 1,
After the step of forming the sealing layer, the step of forming a color filter on the sealing layer,
The step of forming the protective film includes forming the protective film so as to cover the sealing layer and the color filter. It is a manufacturing method of the organic EL device according to claim 1 or 2,
The thickness of the said protective film is 0.05 mm-5 mm, The manufacturing method of the organic EL apparatus characterized by the above-mentioned. It is a manufacturing method of the organic EL device according to any one of claims 1 to 3,
The method for manufacturing an organic EL device is characterized in that the layered manufacturing method is an optical modeling method.

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