JP2015201256A - Method for manufacturing organic electroluminescent device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic electroluminescent device including a high-quality color filter, and electronic equipment.SOLUTION: The present invention relates to a method for manufacturing an organic electroluminescent device comprising the steps of: forming an organic electroluminescent element on a first substrate (element forming step); forming a sealing film on the organic electroluminescent element after the element forming step (sealing film forming step); forming a color filter on the sealing film after the sealing film forming step; applying a filler to a second substrate; and bonding the first substrate on which the organic electroluminescent element, the sealing film, and the color filter ware formed to the second substrate via the filler after the sealing film forming step and the color filter forming step.

Description

The present invention relates to a method for manufacturing an organic electroluminescence device and an electronic apparatus.

2. Description of the Related Art Conventionally, a small, high-definition organic electroluminescence device is known that has an element substrate in which a color filter is directly formed on a sealing film in order to improve the viewing angle characteristics of the panel (for example, see Patent Document 1). reference).

JP 2001-126864 A

By the way, in the element substrate in which the sealing film is directly formed on the color filter as described above, the structure of the sealing film and the color filter is formed at a temperature of 110 ° C. or less, for example, so that the organic electroluminescence element does not deteriorate. There is a need to. As a result, the above-described conventional element substrate is different in the state of the color filter from the case where the color filter is directly formed on the substrate. Therefore, if the filler is directly applied to the color filter on the sealing film in the process of attaching the protective substrate, the filler may permeate or react with the color filter, which may reduce the quality of the color filter. there were.

One aspect of the present invention has been made to solve the above-described problems, and an object thereof is to provide a method for manufacturing an organic electroluminescent device and an electronic apparatus including a high-quality color filter.

According to a first aspect of the present invention, there is provided a method for manufacturing an organic electroluminescence element,
An element forming step of forming an organic electroluminescent element on a first substrate; a sealing film forming step of forming a sealing film on the organic electroluminescent element after the element forming step; and the sealing film forming step. Thereafter, after the color filter forming step of forming a color filter on the sealing film, the coating step of applying a filler on the second substrate, the sealing film forming step and the color filter forming step, the organic A bonding step of bonding the first substrate on which the electroluminescent element, the sealing film, and the color filter are formed to the second substrate through the filler, and a method for manufacturing an organic electroluminescent device. Provided.

According to the method for manufacturing the organic electroluminescence device according to the first aspect, the filler does not directly apply onto the color filter when the second substrate is bonded, so that the filler penetrates into the color filter or the color filter. The reaction between the filter and the filler can prevent the occurrence of inconveniences such as deterioration of the quality of the color filter. Therefore, an organic electroluminescence device provided with a good color filter can be manufactured.

Said 1st aspect WHEREIN: Between the said application | coating process and the said bonding process, the viscosity of the said filler is 3
It is good also as a structure further equipped with the 1st hardening process adjusted to the range of 50-600 mPa * s.
According to this configuration, since the filler is adjusted to a predetermined viscosity by the first curing step, the first substrate and the second substrate can be bonded together while the filler is satisfactorily held on the second substrate. . Therefore, the substrate bonding process can be performed easily and with high accuracy.

In the first aspect, the first curing step further includes a second curing step in which the curing rate of the filler is set to 10 to 40%, and the curing rate of the filler is 95% or more after the bonding step. It is good.
According to this configuration, since the filler is cured in two stages, the strain at the time of curing shrinkage of the filler can be reduced. Therefore, it is possible to suppress the generation of voids in the filler by improving the adhesion at the interface between the color filter and the filler.

In the first aspect, the filler is a delayed curable adhesive, and the first curing step includes:
It is good also as a structure which is the process of irradiating the said filler with an ultraviolet-ray.
According to this configuration, the viscosity of the filler can be adjusted by a simple process such as ultraviolet irradiation.

The said 1st aspect WHEREIN: In the said sealing film formation process, it is good also as a structure which forms the said sealing film which consists of a three-layer structure of an inorganic material, an organic material, and an inorganic material.
According to this configuration, the organic electroluminescence element can be satisfactorily sealed.

According to the 2nd aspect of this invention, the electronic device provided with the organic electroluminescent apparatus manufactured with the method which concerns on a 1st aspect is provided.

According to the electronic device which concerns on a 2nd aspect, since the organic electroluminescent apparatus which has a good-quality color filter is provided, this electronic device itself also becomes the reliable thing excellent in image quality.

It is an equivalent circuit diagram which shows the electrical structure of the organic electroluminescent apparatus of this embodiment. It is a schematic plan view which shows the structure of the organic electroluminescent apparatus of this embodiment. It is a schematic plan view which shows arrangement | positioning of a sub pixel. FIG. 4 is a schematic cross-sectional view showing a structure of a subpixel along the line A-A ′ of FIG. 3. It is a schematic plan view which shows arrangement | positioning of the convex part and colored layer in a sub pixel. It is a flowchart which shows the manufacturing method of the organic electroluminescent apparatus concerning this embodiment. (A)-(f) is a schematic sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of this embodiment. (A)-(c) is a schematic sectional drawing which shows the principal part process of the manufacturing process of an organic electroluminescent apparatus. It is the experimental result which showed the relationship between the ultraviolet irradiation amount in a 1st hardening process, and a viscosity. It is a figure which shows the change of the cure rate accompanying ultraviolet irradiation. (A)-(e) is a schematic sectional drawing which shows the bonding process of a counter substrate. It is the schematic which shows the head mounted display as an electronic device.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
In addition, in the drawings used in the following description, in order to make the features easy to understand, there are cases where the portions that become the features are enlarged for the sake of convenience, and the dimensional ratios of the respective components are not always the same as the actual ones. Absent.

First, prior to describing a method for manufacturing an organic electroluminescence device (hereinafter referred to as an organic EL device) of the present embodiment, the structure of an organic EL device manufactured by the manufacturing method will be described with reference to FIGS. To do. 1 is an equivalent circuit diagram showing the electrical configuration of the organic EL device of the present embodiment, FIG. 2 is a schematic plan view showing the configuration of the organic EL device of the present embodiment, and FIG. 3 is a schematic plan view showing the arrangement of sub-pixels. 4 is a schematic cross-sectional view showing the structure of a subpixel along the line AA ′ in FIG. 3, and FIG. 5 is a schematic plan view showing the arrangement of convex portions and colored layers in the subpixel.

Since the organic EL device of the present embodiment is manufactured by a manufacturing method described later, the organic EL device is highly reliable with a good color filter.

As shown in FIG. 1, the organic EL device 100 according to this embodiment includes a plurality of scanning lines 12 and a plurality of data lines 13 that intersect with each other, and a power supply line 14. It has a scanning line driving circuit 16 to which a plurality of scanning lines 12 are connected, and a data line driving circuit 15 to which a plurality of data lines 13 are connected. In addition, a plurality of sub-pixels 18 which are light-emitting pixels arranged in a matrix corresponding to the intersections of the plurality of scanning lines 12 and the plurality of data lines 13 are provided.

The sub pixel 18 includes an organic EL element 30 as a light emitting element and a pixel circuit 20 that controls driving of the organic EL element 30.

The organic EL element 30 includes a pixel electrode 31 as an anode, a counter electrode 33 as a cathode, and a functional layer 32 provided between the pixel electrode 31 and the counter electrode 33. Such an organic EL element 30 can be electrically expressed as a diode. As will be described later in detail, the functional layer 32 and the counter electrode 33 are formed as a common member extending over the plurality of sub-pixels 18.

The pixel circuit 20 includes a switching transistor 21, a storage capacitor 22, and a driving transistor 23. The two transistors 21 and 23 are, for example, an n-channel or p-channel thin film transistor (TFT) or M
An OS transistor can be used.

The gate of the switching transistor 21 is connected to the scanning line 12, one of the source or drain is connected to the data line 13, and the other of the source or drain is connected to the gate of the driving transistor 23.
One of the source and drain of the driving transistor 23 is connected to the pixel electrode 31 of the organic EL element 30, and the other of the source and drain is connected to the power supply line 14. A storage capacitor 22 is connected between the gate of the driving transistor 23 and the power supply line 14.

When the scanning line 12 is driven and the switching transistor 21 is turned on, the potential based on the image signal supplied from the data line 13 at that time is held in the storage capacitor 22 via the switching transistor 21. The on / off state of the driving transistor 23 is determined according to the potential of the storage capacitor 22, that is, the gate potential of the driving transistor 23. When the driving transistor 23 is turned on, a current corresponding to the gate potential flows from the power supply line 14 to the functional layer 32 sandwiched between the pixel electrode 31 and the counter electrode 33 via the driving transistor 23. The organic EL element 30 emits light according to the amount of current flowing through the functional layer 32.

As shown in FIG. 2, the organic EL device 100 has an element substrate 10. Element substrate 10
Includes a display area E0 (indicated by a one-dot chain line in the figure) and a non-display area E3 outside the display area E0.
And are provided. The display area E0 has an actual display area (light emitting area) E1 (indicated by a two-dot chain line in the drawing) and a dummy area E2 surrounding the actual display area E1.

In the actual display area E1, sub-pixels 18 as light-emitting pixels are arranged in a matrix. As described above, the subpixel 18 includes the organic EL element 30 as a light emitting element.
With the operation of the switching transistor 21 and the driving transistor 23, blue (
B), light emission of any color among green (G) and red (R) is obtained.

In the present embodiment, the sub-pixels 18 that can emit light of the same color are arranged in the first direction, and the second direction in which the sub-pixels 18 that can emit light of different colors intersect (orthogonal) the first direction. The so-called stripe-type sub-pixels 18 are arranged in an array. Hereinafter, the first direction is referred to as the Y direction, and the second direction is referred to as the X direction. The arrangement of the sub-pixels 18 on the element substrate 10 is not limited to the stripe method, and may be a mosaic method or a delta method.

The dummy area E2 is provided with a peripheral circuit mainly for causing the organic EL elements 30 of the sub-pixels 18 to emit light. For example, as shown in FIG. 2, the actual display area E1 in the X direction.
A pair of scanning line driving circuits 16 is provided extending in the Y direction at a position sandwiching. An inspection circuit 17 is provided between the pair of scanning line driving circuits 16 at a position along the actual display area E1.

A flexible circuit board (FPC) 43 for electrical connection with an external drive circuit is connected to one side (the lower side in the figure) parallel to the X direction of the element substrate 10. FPC4
3 includes a driving IC 4 connected to the peripheral circuit on the element substrate 10 side through the wiring of the FPC 43.
4 is implemented. The driving IC 44 includes the data line driving circuit 15 described above, and the data line 13 and the power supply line 14 on the element substrate 10 side are electrically connected to the driving IC 44 via the FPC 43.

Between the display area E0 and the outer edge of the element substrate 10, that is, in the non-display area E3, for example, a wiring 29 for applying a potential to the counter electrode 33 of the organic EL element 30 of each subpixel 18 is formed. The wiring 29 is provided on the element substrate 10 so as to surround the display area E0 except for the side portion of the element substrate 10 to which the FPC 43 is connected.

Next, the planar arrangement of the sub-pixels 18, particularly the planar arrangement of the pixel electrodes 31 will be described with reference to FIG. 3. As shown in FIG. 3, the sub-pixel 18B from which blue (B) light emission is obtained,
Sub-pixels 18G from which green (G) light emission is obtained and sub-pixels 18R from which red (R) light emission is obtained are arranged in this order in the X direction. The sub-pixels 18 that can emit light of the same color are arranged adjacent to each other in the Y direction. Three sub-pixels 18B, 18G, and 18R arranged in the X direction are combined into one pixel 19
Is displayed. Sub-pixels 18B, 18G, 18 in the X direction
The arrangement pitch of R is less than 5 μm. Sub-pixels 18B, 18G, and 18R are arranged at intervals of 0.5 μm to 1.0 μm in the X direction. Sub-pixels 18B and 18 in the Y direction
The arrangement pitch of G and 18R is less than about 10 μm.

The pixel electrode 31 in the sub-pixel 18 has a substantially rectangular shape, and the longitudinal direction is arranged along the Y direction. The pixel electrode 31 may be referred to as pixel electrodes 31B, 31G, and 31R corresponding to the emission color. An insulating film 27 is formed to cover the outer edges of the pixel electrodes 31B, 31G, and 31R. Thus, an opening 27a is formed on each pixel electrode 31B, 31G, 31R, and each of the pixel electrodes 31B, 31G, 31R is exposed in the opening 27a.
The planar shape of the opening 27a is also substantially rectangular.
In FIG. 3, the arrangement of the sub-pixels 18B, 18G, and 18R of different colors is in the order of blue (B), green (G), and red (R) from the left side in the X direction, but is not limited thereto. It is not something. For example, in the X direction, the order may be red (R), green (G), and blue (B) from the left side.

Next, the structure of the sub-pixels 18B, 18G, and 18R will be described with reference to FIG. FIG.
As shown in FIG. 1, the organic EL device 100 includes a base 11 as a first substrate in the present invention, a reflective layer 25, a transparent layer 26, pixel electrodes 31B, 31G, 31R,
It has a functional layer 32 and a counter electrode 33 which is a common cathode. In addition, a sealing layer covering the counter electrode 33 (
Sealing layer) 34 and a color filter 36 formed on the sealing layer 34. further,
In order to protect the color filter 36, a counter substrate (second substrate) 41 is disposed via a transparent resin layer (adhesive) 42. The element substrate 10 is formed from the base material 11 to the color filter 36.
Up to. In FIG. 4, the illustration of the configuration of the driving transistor 23 and the like of the pixel circuit 20 in the element substrate 10 is omitted. Further, as described later, the functional layer 3
2 and the counter electrode 33 are provided continuously over the plurality of sub-pixels 18, and the functional layer 32 and the counter electrode 33 are not divided for each sub-pixel 18, but for convenience, the organic EL element 30 is provided for each sub-pixel 18. It is explained that is provided. Furthermore, the reflective layer (first reflective layer) 25 may be formed continuously over the plurality of subpixels 18 or may be formed for each subpixel 18.

The organic EL device 100 employs a top emission method in which light emitted from the functional layer 32 passes through the color filter 36 and is extracted from the counter substrate 41 side. Therefore,
As the base material 11, not only a transparent substrate such as glass but also an opaque substrate such as silicon and ceramics can be used. The counter substrate 41 is a transparent substrate such as glass.

The reflective layer 25 formed on the substrate 11 can be made of Al (aluminum), Ag (silver), or an alloy of these light reflective metals. In the present embodiment, the light reflectance of the reflective layer 25 is preferably 40% or more, more preferably 80% or more.

The transparent layer 26 is intended to electrically insulate the pixel electrode 31 and the reflective layer 25 that will be formed later. For example, an inorganic insulating film such as SiOx (silicon oxide) can be used.

A pixel electrode 31 provided on the transparent layer 26 corresponding to the sub-pixels 18B, 18G, and 18R.
B, 31G, and 31R are, for example, ITO (Indium Tin Oxide) and IZO (Indium Zinc).
Oxide) and other transparent conductive films having different film thicknesses. Specifically, blue (B)
, Green (G), red (R) in order of thickness. In the present embodiment, the pixel electrode 31
The light transmittance is preferably 50% or more, more preferably 80% or more.

The functional layer 32 includes an organic light emitting layer from which white light can be obtained, and is formed in common across the sub-pixels 18B, 18G, and 18R. White light can be realized by combining organic light emitting layers that can emit blue (B), green (G), and red (R) light. Also, pseudo white light can be obtained by combining organic light emitting layers that can emit blue (B) and yellow (Y) light.

The counter electrode 33 covering the functional layer 32 is made of, for example, an MgAg (magnesium silver) alloy,
The film thickness is controlled to have both light transmittance and light reflectivity. In this embodiment,
The light transmittance of the counter electrode 33 is preferably 20% or more, more preferably 30% or more, and the light reflectance of the counter electrode 33 is preferably 20% or more, more preferably 50% or more.

The sealing layer 34 includes a first sealing layer 34a, a planarization layer 34b, and a second sealing layer 3 from the counter electrode 33 side.
4c is laminated in order. The gas barrier property of the sealing layer 34 is not particularly limited as long as the organic EL element 30 can be protected from oxygen and water in the atmosphere, but the oxygen permeability is 0.01 cc / m ^2. / Day or less, and the water vapor transmission rate is 7 × 10 ⁻³ g / m ² / day or less, especially 5 × 10 ⁻⁴ g / m ² / day.
Hereinafter, it is particularly preferably 5 × 10 ⁻⁶ g / m ² / day or less. The light transmittance of the sealing layer 34 is preferably 80% or more with respect to the light emitted from the counter electrode 33.
The first sealing layer 34a and the second sealing layer 34c are formed using an inorganic material. As the inorganic material, it is difficult to pass moisture or oxygen, for example, SiOx (silicon oxide), SiNx (
Examples thereof include silicon nitride), SiOxNy (silicon oxynitride), and AlxOy (aluminum oxide). Examples of the method for forming the first sealing layer 34a and the second sealing layer 34c include a vacuum deposition method, an ion plating method, a sputtering method, and a CVD method. It is desirable to employ a vacuum deposition method or an ion plating method because it is difficult to damage the organic EL element 30 with heat or the like. The film thicknesses of the first sealing layer 34a and the second sealing layer 34c are 50 nm to 1000 nm, preferably 200 nm to 400 nm so that cracks and the like hardly occur during film formation and transparency is obtained.

The planarization layer 34b has transparency, and can be formed using, for example, a heat or ultraviolet curable epoxy resin, acrylic resin, urethane resin, or silicone resin. Alternatively, a coating-type inorganic material (such as silicon oxide) may be used. The planarization layer 34 b is formed by being stacked on the first sealing layer 34 a that covers the plurality of organic EL elements 30. Since the surface of the first sealing layer 34a is uneven due to the influence of the pixel electrodes 31B, 31G, and 31R having different thicknesses, the planarizing layer 3 has a thickness of 1 μm to 5 μm in order to reduce the unevenness.
Preferably 4b is formed. As a result, the color filter 36 formed on the sealing layer 34 is hardly affected by the unevenness.

The second sealing layer 34c covering the planarization layer 34b is formed using the inorganic material described above.

The color filter 36 includes a blue (B), green (G), and red (R) colored layers 36B, 36G, and 36R formed on the sealing layer 34 by a photolithography method.
The colored layers 36B, 36G, and 36R are formed corresponding to the sub-pixels 18B, 18G, and 18R, and the colored layers 36 of the sub-pixels 18B, 18G, and 18R of different colors on the sealing layer 34.
A light-transmitting convex portion 35 is provided between B, 36G, and 36R. The height of the convex portion 35 on the sealing layer 34 is substantially equal to the film thickness of the colored layers 36B, 36G, and 36R. The convex portion 35 is a material obtained by removing the coloring material from the color filter layer 36, and the same main material is used for the color filter 36. The light transmittance of the convex portion 35 is preferably 80% or more with respect to the light emitted from the counter electrode 33.

In the organic EL device 100 of the present embodiment, an optical resonator is configured between the reflective layer 25 and the counter electrode 33. Pixel electrodes 31B, 31G, 31R for each of the sub-pixels 18B, 18G, 18R
The optical distances in the respective optical resonators differ due to the different film thicknesses.
As a result, in each of the sub-pixels 18B, 18G, and 18R, light having a resonance wavelength corresponding to each color is obtained.
In addition, the adjustment method of the optical distance in an optical resonator is not limited to this, For example, the film thickness of the transparent layer 26 on the base material 11 and the transparent layer 26 are comprised for every sub pixel 18B, 18G, 18R. The materials may be different.

Resonant light emitted from the optical resonators of the sub-pixels 18B, 18G, and 18R is emitted from the colored layers 36.
The light passes through B, 36G, and 36R and is emitted from the transparent counter substrate 41 side. Since the color filter 36 is formed on the sealing layer 34, color mixing due to light leakage between the sub-pixels 18B, 18G, and 18R is reduced as compared with the case where the color filter 36 is formed on the counter substrate 41 side. The Such sub-pixels 18B, 18G, and 18R have the same structure as the sub-pixels 18B, 18G.
, 18R becomes smaller, that is, the higher the definition, the more effectively the color mixture can be reduced.
As described above, the functional layer 32 of the sub-pixels 18R, 18B, and 18G emits white light. However, as described above, the optical distance between the reflective layer 25 and the counter electrode 33 is different, and the resonance wavelength is different for each sub-pixel 18. The spectrum of light emitted from the counter electrode 33 is different. Although the internal emission spectrum of the functional layer 32 can be interpreted as being the same, the spectrum of light emitted using the resonant structure is different, and therefore, for convenience, the sub-pixel 18 emits light in different wavelength regions, that is, the sub-pixel. 18 describes that light emission of any one of red (R), green (G), and blue (B) can be obtained. Furthermore, in the present embodiment, the sub-pixel 18 that can emit light of the same color, or
The sub-pixel 18 that can emit light of different colors is described according to the spectrum of light emitted using the resonance structure.

The organic EL device 100 includes a transparent resin layer (filling layer) 4 disposed on the color filter 36.
2, the counter substrate 41 is pasted through 2.

Next, the relationship between the convex part 35 on the sealing layer 34 and the colored layers 36B, 36G, and 36R will be described with reference to FIG.

As shown in FIG. 5, the color filter 36 of the organic EL device 100 of the present embodiment is arranged by extending a colored layer of the same color in the Y direction. That is, the blue (B) colored layer 36 </ b> B is arranged in a stripe shape across the plurality of sub-pixels 18 </ b> B (pixel electrodes 31 </ b> B) arranged in the Y direction. Similarly, the green (G) colored layer 36G includes a plurality of sub-pixels 18G (
The pixel electrodes 31G) are arranged in stripes. The red (R) colored layer 36R is
The plurality of sub-pixels 18R (pixel electrodes 31R) arranged in the Y direction are arranged in a stripe shape. The boundary between the colored layers 36B, 36G, and 36R is located approximately at the center between the pixel electrodes 31 of adjacent sub-pixels 18 arranged in the X direction.

Between the colored layers 36B, 36G, 36R of different colors, these colored layers 36B, 36G,
Projections 35 are arranged on the sealing layer 34 so as to divide 36R. Therefore, on the sealing layer 34, the protrusions 35 are also arranged in stripes (stripes) so as to extend in the Y direction.

As shown in FIG. 4, the cross-sectional shape of the convex portion 35 is trapezoidal, and the bottom surface of the convex portion 35 is located between the pixel electrodes 31 of the adjacent sub-pixels 18 as shown in FIG.
The outer edge of each pixel electrode 31 is covered with an insulating film 27, and the pixel electrode 31 is in contact with the functional layer 32 in an opening 27 a provided in the insulating film 27. Since the opening 27a is a region that substantially contributes to light emission in the sub-pixel 18, the protrusion 35 may be formed so that the bottom surface of the protrusion 35 overlaps with the pixel electrode 31 other than the opening 27a.

In this embodiment, the light-transmitting convex portion 35 is formed by a photolithography method using a photosensitive resin material that does not include a coloring material. That is, the convex portion 35 and the colored layers 36B, 3
The main materials of 6G and 36R are the same. The width of the convex portion 35 on the sealing layer 34 is about 0.5.
μm to 1.0 μm (preferably the bottom has a width of 0.7 μm and the top 35a has a width of 0.5 μm)
The height is approximately 1.1 μm. The height of the convex portion 35 is substantially equal to the average film thickness of the colored layers 36B, 36G, and 36R.

The film thicknesses of the colored layers 36B, 36G, and 36R may be different from each other in consideration of, for example, white balance.

In addition, the convex part 35 is not limited to arrange | positioning in the stripe form extended in the Y direction, as shown in FIG. For example, they may be arranged in a lattice shape extending in the X direction and the Y direction so as to surround the opening 27a in the pixel electrode 31 of each subpixel 18. The colored layer 36R
, 36G, 36B, at least a portion of the top of the convex portion 35 may be covered.

As described above, according to the organic EL device 100 of the present embodiment, the transparent resin layer 42 is not directly applied onto the color filter 36 when the counter substrate 41 is bonded in the manufacturing process described later. Occurrence of problems such as the transparent resin layer 42 penetrating into 36 or the color filter 36 and the transparent resin layer 42 reacting is prevented. Therefore, the organic EL device 100 has a high reliability including the high-quality color filter 36.

(Method for manufacturing organic EL device)
Next, a method for manufacturing the organic EL device of the present embodiment will be described with reference to FIGS. FIG. 6 is a flowchart showing a method for manufacturing the organic EL device of this embodiment, and FIG.
(a)-(f) is a schematic sectional drawing which shows the manufacturing method of the organic electroluminescent apparatus of this embodiment. In FIG. 7, a known method can be adopted as a method for forming the pixel circuit 20, the organic EL element 30, and the like on the substrate 11. Therefore, in FIGS. 7A to 7F, the configuration of the driving transistor 23 of the pixel circuit 20 on the substrate 11 and the display of the reflective layer 25 and the transparent layer 26 are omitted. FIGS. 8A to 8C are schematic cross-sectional views illustrating main processes of the manufacturing process of the organic EL device.

Specifically, the manufacturing method of the organic EL device 100 according to the present embodiment is, as shown in FIG.
L element forming step (step S1), sealing layer forming step (step S2), color filter forming step (step S3), transparent resin material applying step (step S4), and first curing treatment step (step S5) ), A counter substrate bonding step (step S6), and a second curing treatment step (step S7).

In the organic EL element forming step (step S1) of FIG. 6, as shown in FIG.
1, the organic EL element 30 including the pixel electrode 31 (31R, 31G, 31B), the functional layer 32, and the counter electrode 33 is formed. In addition, a well-known method is employable as the method of forming the organic EL element 30 etc. on the base material 11. FIG. Then, the process proceeds to step S2.

In the sealing layer forming step (step S1) in FIG. 6, first, a first sealing layer 34a that covers the counter electrode 33 is formed as shown in FIG. As a method of forming the first sealing layer 34a,
For example, a method of vacuum-depositing silicon oxide can be mentioned. The film thickness of the first sealing layer 34a is approximately 200 nm to 400 nm.
Next, a planarization layer 34b that covers the first sealing layer 34a is formed. As a method for forming the planarizing layer 34b, for example, a solution containing a transparent epoxy resin and a solvent of the epoxy resin is used, and the solution is applied by a printing method or a spin coat method and then dried, whereby an epoxy is obtained. A planarizing layer 34b made of resin is formed. The thickness of the planarizing layer 34b is preferably 1 μm to 5 μm,
In this case, the thickness was 3 μm.

Note that the planarization layer 34b is not limited to being formed using an organic material such as an epoxy resin, and as described above, a coating-type inorganic material is applied by a printing method, and is dried and baked. Alternatively, a silicon oxide film having a thickness of about 3 μm may be formed as the planarizing layer 34b.
Subsequently, a second sealing layer 34c that covers the planarization layer 34b is formed. The method of forming the second sealing layer 34c is the same as that of the first sealing layer 34a, and for example, a method of vacuum-depositing silicon oxide can be used. The film thickness of the second sealing layer 34c is also approximately 200 nm to 400 nm. Then, the process proceeds to step S3.

In the color filter forming process (step S3) in FIG. 6, the color filter 36 is formed by a photolithography process.
First, the convex portion 35 is formed on the sealing layer 34. As a method of forming the convex portion 35, a photosensitive resin material that does not contain a coloring material is applied using a spin coating method and pre-baked.
A photosensitive resin layer having a thickness of about 1 μm is formed. The photosensitive resin material may be a positive type or a negative type. By exposing and developing the photosensitive resin layer using a photolithography method, as shown in FIG. 7B, a convex portion 35 is formed on the sealing layer 34. By adjusting the exposure and development conditions, a trapezoidal convex portion 35 is formed so that the bottom surface has a width of about 0.7 μm. The positions where the convex portions 35 are formed on the substrate 11 are adjacent to the sub-pixels 18B and 18 of different colors.
Between the pixel electrodes 31B, 31G, and 31R corresponding to G and 18R.

Then, as shown in FIG. 7C, a photosensitive resin material containing a green coloring material is applied to the surface of the sealing layer 34 on which the convex portions 35 are formed by a spin coating method and baked. It is made to dry and the photosensitive resin layer 50g is formed. By exposing and developing the photosensitive resin layer 50g, as shown in FIG. 7D, a colored layer 36G that fills the space between the convex portions 35 located above the pixel electrode 31G is formed.
Next, a photosensitive resin material containing a blue coloring material is applied to the surface of the sealing layer 34 on which the colored layer 36G is formed by a spin coating method, and is dried by baking, so that the photosensitive resin layer 50 is formed.
b is formed. The colored layer 36B is formed by exposing and developing the photosensitive resin layer 50b.
Next, a photosensitive resin material containing a red coloring material is applied to the surface of the sealing layer 34 on which the colored layer 36B and the colored layer 36G are formed by a spin coat method, and is dried by baking. The conductive resin layer 50r is formed. The colored layer 36R is formed by exposing and developing the photosensitive resin layer 50r.

As a result, as shown in FIG. 7E, a colored layer 36B is formed between the convex portions 35 located above the pixel electrode 31B, and the colored layer 36G is formed between the convex portions 35 located above the pixel electrode 31G. A colored layer 36R is formed between the protrusions 35 formed and positioned above the pixel electrode 31R. The element substrate 10 is formed by the above process. Then, the process proceeds to step S4 and subsequent steps.

After step S4, the organic EL device 100 is formed by bonding the element substrate 10 to the counter substrate 41 through the transparent resin layer 42 as shown in FIG.

Incidentally, in the present embodiment, a functional layer 32 made of an organic material is formed below the color filter 36 and the sealing layer 34. Therefore, the formation process of the color filter 36 and the sealing layer 34 needs to be performed at a temperature of, for example, 110 ° C. or less in order to prevent the functional layer 32 from being deteriorated.

On the other hand, for example, in the case of a structure in which the color filter is directly formed on the counter substrate, the above temperature restriction is not necessary. Therefore, the color filter 36 directly formed on the sealing layer 34 as in the present embodiment is in a state (film quality, characteristics, etc. of the surface) different from that formed directly on the substrate without temperature restrictions. Is different.

Therefore, if the forming material of the transparent resin layer 42 for bonding the element substrate 10 and the counter substrate 41 is directly applied to the color filter 36, the forming material may permeate or react with the color filter 36. As a result, the quality of the color filter 36 is deteriorated, thereby deteriorating the quality, and as a result, the display quality of the organic EL device 100 is degraded.

On the other hand, in the manufacturing method of the organic EL device 100 of the present embodiment, the forming material of the transparent resin layer 42 is applied to the counter substrate 41 side in the transparent resin material application step (step S4) of FIG. .

In the transparent resin material application step (step S4) in FIG. 6, first, as shown in FIG.
The counter substrate 41 is prepared by dividing the quartz glass. Subsequently, a material for forming the transparent resin layer 42 is applied on the counter substrate 41. As a method for applying the material for forming the transparent resin layer 42, a conventionally known method can be used.

Then, as shown in FIG. 8B, the forming material 42a of the transparent resin layer 42 applied on the counter substrate 41 is left for a predetermined time. Thereby, bubbles remaining in the forming material 42a are removed.

In the present embodiment, an ultraviolet curable adhesive, specifically a delayed curable adhesive, is used as the forming material 42 a of the transparent resin layer 42. That is, the transparent resin layer 42 is formed by irradiating the forming material 42 a with light (ultraviolet rays), and thus there is no need to consider the influence of heat on the organic EL element 30.

The adhesive contains a photocationically polymerizable compound and a photocationic polymerization initiator, and is a sealing adhesive in which a curing reaction starts by light irradiation and a curing reaction proceeds by a dark reaction even after blocking light. . The photocationically polymerizable compound is preferably an aromatic epoxy resin. In addition, the photocationic polymerization initiator is preferably a salt having a boronic acid represented by the following formula (1) as a counter ion.

Further, the above cationic photopolymerization initiator is a reaction product of a compound having at least one hydroxyl group in the molecule and generating an acid by light irradiation and a compound having two or more functional groups that react with the hydroxyl group in the molecule. The above is preferable, and a reaction product of a compound having two or more hydroxyl groups in the molecule and generating an acid upon irradiation with light and a carboxylic anhydride or dicarboxylic acid is more preferable.

The photocationically polymerizable adhesive preferably contains an aliphatic hydrocarbon having a hydroxyl group and / or a polyether compound, preferably contains a filler, and contains an alkaline filler and / or an acid that reacts with an acid. It preferably contains an adsorbing ion exchange resin, and preferably contains a desiccant.

By the way, when the forming material 42a of the transparent resin layer 42 is cured, if the curing process is performed once (one step), after being put into a reliability test (for example, a cooling cycle test described later) of the organic EL device 100, There is a possibility that voids of the transparent resin layer 42 are generated, and display defects may be caused by changing the transmittance of the void generation part at the time of issuance. The void is generated at the end of the color filter 36 and proceeds to the inside of the actual display area E1. As one of the causes of such voids,
It is conceivable that the adhesion at the interface between the color filter 36 and the transparent resin layer 42 is weak.

In the present embodiment, the formation material 42a of the transparent resin layer 42 is cured in two stages, ie, a first curing process and a second curing process, in order to deal with such problems as the generation of voids. Thereby, the distortion at the time of curing shrinkage of the transparent resin layer 42 is suppressed, the adhesion at the interface between the transparent resin layer 42 and the color filter 36 is improved, and generation of voids in the transparent resin layer 42 is prevented. Yes.

Specifically, in the present embodiment, the forming material 42 of the transparent resin layer 42 applied on the counter substrate 41.
After a is left for a predetermined time, the process proceeds to the first curing process (step S5). In the present embodiment, as will be described later, after the first curing process, the counter substrate bonding process is performed, and then the second curing process process is performed.

In the first curing process (step S5) in FIG. 6, as shown in FIG.
V) to adjust the viscosity of the forming material 42a.

FIG. 9 is an experimental result showing the relationship between the ultraviolet irradiation in the first curing process and the viscosity of the forming material 42a after the ultraviolet irradiation. In this experiment, the amount of ultraviolet irradiation (unit: mJ / cm ² ) was 50
, 100, 300, 500, 600, 1000, 1500, 2000, 2500, 300
The viscosity was set to 0, 4000, and 5000, and the viscosity corresponding to each ultraviolet ray irradiation amount was measured, and the determination by the cooling and cycling test was also performed.

The cooling / heating cycle test was conducted after leaving the organic EL device at room temperature (20 ° C.) for 30 minutes, and then −3
The first step of moving to an environment of 0 ° C., leaving it for 1 hour, and returning it to the room temperature environment again, and organic EL
The apparatus is allowed to stand at room temperature for 30 minutes, then moved to an environment of 80 ° C., left for 1 hour, and a cycle including a second step of returning to the room temperature environment again is repeated.

As shown in FIG. 9, in Experimental Example 1, when the ultraviolet irradiation amount is as small as 50 mJ / cm ² , it becomes difficult to control the irradiation amount and the viscosity after ultraviolet irradiation is small (300 mPa ·
s) was confirmed. In Experimental example 1, since the reliability of the result by the thermal cycle test was not obtained, the determination result was determined to be impossible (x).

In Experimental Examples 2 to 5, it was confirmed that no void was generated until after 100 cycles of the thermal cycle test. That is, the ultraviolet irradiation amount at the time of the first curing process is 100, 300,
If set to 400, 600 mJ / cm ² , a sufficient value (360) as the viscosity after ultraviolet irradiation.
450, 500, 550 mPa · s), the strain at the time of curing shrinkage of the transparent resin layer 42 is suppressed, and the adhesiveness at the interface between the transparent resin layer 42 and the color filter 36 is improved, thereby reducing voids. It was confirmed that generation can be suppressed. Therefore, in these experimental examples 2-5, the determination result by the thermal cycle test was made into good ((circle)).

In Experimental Example 6 and Experimental Example 7, it was confirmed that no void was generated until after 20 cycles of the thermal cycle test. That is, the amount of UV irradiation at the time of the first curing process is 1000, 15
If set to 00 mJ / cm ² , a sufficient value (600 mPa · s as the viscosity after ultraviolet irradiation)
Therefore, it is confirmed that the distortion at the time of curing shrinkage of the transparent resin layer 42 is suppressed, and the occurrence of voids can be suppressed by improving the adhesion at the interface between the transparent resin layer 42 and the color filter 36. . On the other hand, in these experimental examples 6 and 7, there may be a case where a solid difference in adhesion strength at the interface between the transparent resin layer 42 and the color filter 36 may occur. Therefore, Experimental Example 6
7, the determination result by the cooling and heating cycle test was acceptable (Δ).

Moreover, in Experimental example 8-Experimental example 10, it has confirmed that a void did not generate | occur | produce until 10 cycles of a thermal cycle test. In other words, it was confirmed that voids were generated when the thermal cycle test was 10 cycles or more, and solid differences in adhesion strength at the interface between the transparent resin layer 42 and the color filter 36 were generated. Therefore, in these Experimental Examples 8 to 10, the determination result by the thermal cycle test was determined to be impossible (x).

In Experimental Examples 11 and 12, it was confirmed that the bonding process of the counter substrate 41 could not be performed because the viscosity of the forming material 42a was too high. That is, these experimental examples 1
In 1 and 12, since the amount of ultraviolet irradiation was too large, it was difficult to produce an organic EL device, and therefore, the determination result was made impossible (x) without performing a cooling / heating cycle test.

Based on the experimental results shown in FIG. 9, the inventor has formed the material 4 after the first curing treatment.
The knowledge that the viscosity of 2a affects the amount of strain at the time of curing shrinkage of the transparent resin layer 42 was obtained. That is, the knowledge that the adhesiveness at the interface between the transparent resin layer 42 and the color filter 36 can be improved and the generation of voids can be suppressed by optimizing the viscosity of the forming material 42a after the first curing treatment. Obtained.

In the present embodiment, based on the above findings, in the first curing process (step S5), the viscosity of the forming material 42a is adjusted to a range of 350 to 600 mPa · s, more preferably 350 to 550 Pa · s. Thereby, in the first curing process (step S5), the curing rate of the forming material 42a is increased to 10 to 40%. In the first curing process (step S5), the ultraviolet irradiation amount is in the range of 100 to 1500 mJ / cm ² , preferably 100 to 6
A range of 00 mJ / cm ² is preferable. In this embodiment, the amount of ultraviolet irradiation is 100 to
The range was 500 mJ / cm ² .

FIG. 10 is a diagram showing a change in the curing rate in the forming material 42a due to ultraviolet irradiation. FIG.
In 0, the horizontal axis indicates the ultraviolet irradiation time, and the vertical axis indicates the curing rate. In FIG. 10, the section from time 0 to t1 corresponds to the first curing process, the section from time t1 to t defines the holding time after the counter substrate 41 is bonded, and from time t to t2. The section corresponds to the second curing process.

As shown in FIG. 10, in the first curing process (step S5), the curing rate of the forming material 42a is increased to 40%, and then the process proceeds to step S6.

In the bonding process of the counter substrate 41 in FIG. 6 (step S6), the counter substrate 41 coated with the forming material 42a is pressed and bonded to the element substrate 10. FIGS. 11A to 11E are schematic cross-sectional views showing the bonding process of the counter substrate 41.

In the bonding process of the counter substrate 41, first, a bonding jig 70 shown in FIG. 11A is prepared. The bonding jig 70 has a stepped inner surface, a first holding surface 71, a second holding surface 72 provided above the first holding surface 71, a through hole 73, and a push-up member. 74,
Is provided. The first holding surface 71 supports the back surface of the counter substrate 41 (the surface opposite to the surface on which the forming material 42a is applied). The second holding surface 72 supports the surface side of the element substrate 10 (the surface side on which the color filter 36 and the like are formed). The through hole 73 has a push-up member 74.
It is for inserting.

Then, as shown in FIG. 11B, the forming material 4 is formed on the first holding surface 71 of the bonding jig 70.
The counter substrate 41 coated with 2a is set, and the second holding surface 72 of the bonding jig 70 is set.
The element substrate 10 is set on the substrate. In the present embodiment, the forming material 42a is formed by the first curing process.
Since the viscosity of is adjusted to a predetermined range, the counter substrate 41 can be set on the bonding jig 70 in a state where the forming material 42a is well held.

Subsequently, as illustrated in FIG. 11C, the push-up member 74 pushes the counter substrate 41 upward by inserting the through hole 73. Thereby, the counter substrate 41 is pressed against the element substrate 10 through the forming material 42a.

The push-up member 74 is between the times t1 and t shown in FIG.
And the counter substrate 41 is pressed against the element substrate 10 side. Thereby, the element substrate 10 and the counter substrate 41 are temporarily bonded via the forming material 42a.

Subsequently, as illustrated in FIG. 11D, the push-up member 74 moves the element substrate 10 and the counter substrate 41 (adhesive body) temporarily bonded via the forming material 42 a upward from the inside of the bonding jig 70. And lift. Then, a robot hand (not shown) receives the adhesive, and then removes the adhesive from the bonding jig 70. Then, the process proceeds to step S7.

In the second curing process (step S7) in FIG. 6, the forming material 42a is cured by irradiating with ultraviolet rays (UV irradiation) as shown in FIG. 11 (e). Second curing process (step S7)
, The ultraviolet irradiation amount is set to 3000 mJ / cm ² or more, and heating is performed at 60 ° C. or more for 30 minutes or more, thereby increasing the curing rate of the forming material 42a to 95% or more as shown in FIG. The element substrate 10 and the counter substrate 41 are bonded to each other.

Thereafter, as shown in FIG. 2, the FPC 43 is mounted on a terminal portion (not shown) of the element substrate 10 bonded via the transparent resin layer 42, thereby completing the organic EL device 100.

As described above, according to the present embodiment, since the forming material 42a of the transparent resin layer 42 is not directly applied onto the color filter 36 when the counter substrate 41 is bonded, the forming material 42a is applied to the color filter 36. It is possible to prevent the occurrence of a problem that the color filter 36 and the forming material 42a react with each other or the quality of the color filter 36 is lowered. Therefore, the organic EL device 100 including the good color filter 36 can be manufactured.

In the present embodiment, since the forming material 42a is adjusted to a predetermined viscosity by the first curing step, the element substrate 10 and the counter substrate 41 are bonded together while the forming material 42a is satisfactorily held on the counter substrate 41. be able to. Therefore, the substrate bonding process can be performed easily and with high accuracy.

In the present embodiment, the forming material 42a of the transparent resin layer 42 is cured in two stages.
The strain at the time of curing shrinkage of the forming material 42a can be reduced. Therefore, it is possible to suppress the generation of voids in the transparent resin layer 42 by improving the adhesion at the interface between the color filter 36 and the transparent resin layer 42.

(Electronics)
Next, the electronic apparatus of this embodiment will be described with reference to FIG. FIG. 12 is a schematic diagram showing a head mounted display as an electronic apparatus.
As shown in FIG. 12, the head mounted display (H
MD) 1000 has two display portions 301 provided corresponding to the left and right eyes. The observer M wears the head mounted display 300 on the head like glasses,
Characters and images displayed on the display unit 301 can be viewed. For example, the left and right display units 3
If an image in consideration of parallax is displayed in 01, it is possible to enjoy watching a stereoscopic video.

The organic EL device 100 of the above embodiment is mounted on the display unit 301. That is,
The organic EL device 100 includes a high-quality color filter 36 and suppresses generation of voids in the transparent resin layer 42.
Therefore, a highly reliable head mounted display 300 having excellent display quality.
Can be provided.

The head mounted display 300 is not limited to having the two display units 301, and may be configured to include one display unit 301 corresponding to either the left or right.

The electronic device on which the organic EL device 100 is mounted is not limited to the head mounted display 300. For example, an electronic device having a display unit such as a personal computer, a portable information terminal, a navigator, a viewer, or a head-up display can be given.

The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. The manufacturing method of the organic EL device and the electronic equipment to which the organic EL device is applied are also included in the technical scope of the present invention. Various modifications other than the above embodiment are conceivable.

DESCRIPTION OF SYMBOLS 11 ... Base material (1st board | substrate), 30 ... Organic EL element, 34 ... Sealing layer (sealing film), 36 ... Color filter, 41 ... Opposite substrate (2nd board | substrate), 42 ... Transparent resin layer (filling layer) ), 100... Organic EL device, 300... Head mounted display as an electronic device.

Claims (6)

A method for producing an organic electroluminescence device, comprising:
An element formation step of forming an organic electroluminescence element on the first substrate;
After the element forming step, a sealing film forming step of forming a sealing film on the organic electroluminescence element;
After the sealing film forming step, a color filter forming step of forming a color filter on the sealing film,
An application step of applying a filler onto the second substrate;
After the sealing film forming step and the color filter forming step, the organic electroluminescence element, the first substrate on which the sealing film and the color filter are formed are formed on the second substrate through the filler. A method for manufacturing an organic electroluminescence device, comprising: a bonding step for bonding. Between the said application | coating process and the said bonding process, the viscosity of the said filler is 350-600 mPa * s.
The method of manufacturing an organic electroluminescence device according to claim 1, further comprising a first curing step that adjusts to the range of 1. In the first curing step, the curing rate of the filler is 10 to 40%,
The manufacturing method of the organic electroluminescent apparatus of Claim 1 or 2 further equipped with the 2nd hardening process which makes a hardening rate 95% or more after the said bonding process. The filler is a delayed curing adhesive,
The method of manufacturing an organic electroluminescence device according to claim 1, wherein the first curing step is a step of irradiating the filler with ultraviolet rays. In the said sealing film formation process, the said sealing film which consists of a three-layer structure of an inorganic material, an organic material, and an inorganic material is formed. Manufacture of the organic electroluminescent apparatus as described in any one of Claims 1-4. Method. The electronic device provided with the organic electroluminescent apparatus manufactured by the manufacturing method of the organic electroluminescent apparatus as described in any one of Claims 1-5.

Images