JP2017135204A5 - - Google Patents

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Publication number
JP2017135204A5
JP2017135204A5 JP2016012558A JP2016012558A JP2017135204A5 JP 2017135204 A5 JP2017135204 A5 JP 2017135204A5 JP 2016012558 A JP2016012558 A JP 2016012558A JP 2016012558 A JP2016012558 A JP 2016012558A JP 2017135204 A5 JP2017135204 A5 JP 2017135204A5
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JP
Japan
Prior art keywords
photoresist
measuring
photoresist stripping
stripping solution
concentration
Prior art date
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Application number
JP2016012558A
Other languages
English (en)
Japanese (ja)
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JP2017135204A (ja
JP6643710B2 (ja
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Priority to JP2016012558A priority Critical patent/JP6643710B2/ja
Priority claimed from JP2016012558A external-priority patent/JP6643710B2/ja
Priority to CN201680079908.3A priority patent/CN108604534B/zh
Priority to PCT/JP2016/088687 priority patent/WO2017130620A1/ja
Priority to TW105144149A priority patent/TWI697743B/zh
Publication of JP2017135204A publication Critical patent/JP2017135204A/ja
Publication of JP2017135204A5 publication Critical patent/JP2017135204A5/ja
Application granted granted Critical
Publication of JP6643710B2 publication Critical patent/JP6643710B2/ja
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JP2016012558A 2016-01-26 2016-01-26 フォトレジスト成分濃度測定装置および濃度測定方法 Active JP6643710B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016012558A JP6643710B2 (ja) 2016-01-26 2016-01-26 フォトレジスト成分濃度測定装置および濃度測定方法
CN201680079908.3A CN108604534B (zh) 2016-01-26 2016-12-26 光致抗蚀剂成分浓度测定装置及浓度测定方法
PCT/JP2016/088687 WO2017130620A1 (ja) 2016-01-26 2016-12-26 フォトレジスト成分濃度測定装置および濃度測定方法
TW105144149A TWI697743B (zh) 2016-01-26 2016-12-30 光阻劑成分濃度測定裝置及濃度測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016012558A JP6643710B2 (ja) 2016-01-26 2016-01-26 フォトレジスト成分濃度測定装置および濃度測定方法

Publications (3)

Publication Number Publication Date
JP2017135204A JP2017135204A (ja) 2017-08-03
JP2017135204A5 true JP2017135204A5 (enExample) 2019-02-14
JP6643710B2 JP6643710B2 (ja) 2020-02-12

Family

ID=59398246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016012558A Active JP6643710B2 (ja) 2016-01-26 2016-01-26 フォトレジスト成分濃度測定装置および濃度測定方法

Country Status (4)

Country Link
JP (1) JP6643710B2 (enExample)
CN (1) CN108604534B (enExample)
TW (1) TWI697743B (enExample)
WO (1) WO2017130620A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020130415B4 (de) 2019-12-26 2025-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Versorgungssystem für chemische flüssigkeiten und verfahren zur versorgung mit chemischen flüssigkeiten
US11715656B2 (en) 2019-12-26 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical liquid supplying system and method of supplying chemical liquid

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3093975B2 (ja) * 1996-07-02 2000-10-03 株式会社平間理化研究所 レジスト剥離液管理装置
JP2000058411A (ja) * 1998-08-04 2000-02-25 Mitsubishi Electric Corp 半導体製造装置
WO2004022612A1 (en) * 2002-08-09 2004-03-18 E. I. Du Pont De Nemours And Company Photoresists, fluoropolymers and processes for 157 nm microlithography
JP2005191030A (ja) * 2003-12-24 2005-07-14 Sharp Corp レジスト除去装置およびレジスト除去方法
JP2007316360A (ja) * 2006-05-26 2007-12-06 Nishimura Yasuji 水系フォトレジスト剥離液の管理方法および管理装置
JP4923882B2 (ja) * 2006-09-07 2012-04-25 三菱化学エンジニアリング株式会社 フォトレジスト供給装置およびフォトレジスト供給方法
JP5019393B2 (ja) * 2008-04-14 2012-09-05 東亞合成株式会社 導電性高分子膜上のレジスト被膜の除去方法および除去装置
JP6028973B2 (ja) * 2012-11-08 2016-11-24 パナソニックIpマネジメント株式会社 フォトレジスト濃度測定装置および測定方法
JP6501448B2 (ja) * 2014-02-28 2019-04-17 芝浦メカトロニクス株式会社 処理装置および処理方法

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