JP2017116931A - 多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 - Google Patents
多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 Download PDFInfo
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- JP2017116931A JP2017116931A JP2016242190A JP2016242190A JP2017116931A JP 2017116931 A JP2017116931 A JP 2017116931A JP 2016242190 A JP2016242190 A JP 2016242190A JP 2016242190 A JP2016242190 A JP 2016242190A JP 2017116931 A JP2017116931 A JP 2017116931A
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Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015246173 | 2015-12-17 | ||
| JP2015246173 | 2015-12-17 |
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| Publication Number | Publication Date |
|---|---|
| JP2017116931A true JP2017116931A (ja) | 2017-06-29 |
| JP2017116931A5 JP2017116931A5 (enExample) | 2020-01-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2016242190A Pending JP2017116931A (ja) | 2015-12-17 | 2016-12-14 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
Country Status (1)
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| JP (1) | JP2017116931A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417569A (zh) * | 2018-05-11 | 2018-08-17 | 深圳市方宇鑫材料科技有限公司 | Led基板及led光源模组 |
| WO2018235721A1 (ja) * | 2017-06-21 | 2018-12-27 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| KR20210022765A (ko) * | 2018-07-19 | 2021-03-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 극자외선 마스크 흡수체 물질들 |
| US20210247687A1 (en) * | 2017-11-14 | 2021-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing extreme ultraviolet mask with reduced wafer neighboring effect |
| JP2021167878A (ja) * | 2020-04-10 | 2021-10-21 | 信越化学工業株式会社 | 反射型マスクブランク、その製造方法及び反射型マスク |
| US11579521B2 (en) | 2020-01-08 | 2023-02-14 | S&S Tech Co., Ltd. | Reflective type blankmask and photomask for EUV |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004331998A (ja) * | 2003-04-30 | 2004-11-25 | Nikon Corp | 多層膜成膜方法、反射鏡及び露光装置 |
| JP2013122952A (ja) * | 2011-12-09 | 2013-06-20 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板の製造方法 |
| WO2015037564A1 (ja) * | 2013-09-11 | 2015-03-19 | Hoya株式会社 | 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
-
2016
- 2016-12-14 JP JP2016242190A patent/JP2017116931A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004331998A (ja) * | 2003-04-30 | 2004-11-25 | Nikon Corp | 多層膜成膜方法、反射鏡及び露光装置 |
| JP2013122952A (ja) * | 2011-12-09 | 2013-06-20 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板の製造方法 |
| WO2015037564A1 (ja) * | 2013-09-11 | 2015-03-19 | Hoya株式会社 | 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018235721A1 (ja) * | 2017-06-21 | 2018-12-27 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| US11454878B2 (en) | 2017-06-21 | 2022-09-27 | Hoya Corporation | Substrate with multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device |
| US20210247687A1 (en) * | 2017-11-14 | 2021-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing extreme ultraviolet mask with reduced wafer neighboring effect |
| US11740547B2 (en) * | 2017-11-14 | 2023-08-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing extreme ultraviolet mask with reduced wafer neighboring effect |
| US12130548B2 (en) | 2017-11-14 | 2024-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet mask with reduced wafer neighboring effect |
| CN108417569A (zh) * | 2018-05-11 | 2018-08-17 | 深圳市方宇鑫材料科技有限公司 | Led基板及led光源模组 |
| KR20210022765A (ko) * | 2018-07-19 | 2021-03-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 극자외선 마스크 흡수체 물질들 |
| JP2021530738A (ja) * | 2018-07-19 | 2021-11-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 極紫外線マスクの吸収体材料 |
| KR102537308B1 (ko) | 2018-07-19 | 2023-05-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 극자외선 마스크 흡수체 물질들 |
| US11579521B2 (en) | 2020-01-08 | 2023-02-14 | S&S Tech Co., Ltd. | Reflective type blankmask and photomask for EUV |
| JP2021167878A (ja) * | 2020-04-10 | 2021-10-21 | 信越化学工業株式会社 | 反射型マスクブランク、その製造方法及び反射型マスク |
| JP7226384B2 (ja) | 2020-04-10 | 2023-02-21 | 信越化学工業株式会社 | 反射型マスクブランク、その製造方法及び反射型マスク |
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Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210803 |