JP2017097957A - Heat treating device, temperature adjusting method, and computer-readable recording medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat treating device capable of improving processing efficiency of a substrate by shortening a temperature rising time of a heating plate and early stabilizing an atmospheric temperature of the heating plate.SOLUTION: A heat treating unit U2 comprises a heating plate, a heater 116 which heats the heating plate, a power supply PS which applies voltage to the heater 116, a transformer 200 configured to allow change of the voltage applied from the power supply PS to the heater 116 between power supply voltage and step-up voltage, a temperature sensor 117 which measures a temperature of the heating plate, and a controller 10. The controller 10 changes the voltage applied from the power supply PS to the heater 116 by controlling the transformer 200 when a preset temperature of the wafer to be processed next is higher than a measured temperature of the heating plate, and changes the voltage applied from the power supply PS to the heater 116 to the power supply voltage by controlling the transformer 200 when the measured temperature of the heating plate reaches a target temperature.SELECTED DRAWING: Figure 6

Description

  The present disclosure relates to a heat treatment apparatus, a temperature adjustment method, and a computer-readable recording medium.

  Currently, a microfabrication process for forming a concavo-convex pattern (for example, a resist pattern) on the surface of a substrate (for example, a semiconductor wafer, a glass wafer, or other various wafers) using a photolithography technique is widely performed. Patent Document 1 discloses a heat treatment apparatus which is one of apparatuses used in a microfabrication process.

  The heat treatment apparatus includes a hot plate that heats a substrate placed on the surface. For example, when the substrate is finely processed using a photolithography technique, the heat treatment apparatus performs heat treatment (pre-baking) for evaporating the solvent of the resist solution applied to the surface of the substrate or exposure processing, A heat treatment (post-exposure baking) for promoting the chemical reaction of the coating film and a heat treatment (post-baking) after the development treatment are performed.

JP 2001-098929 A

  At the time of starting the heat treatment apparatus, it takes time to raise the temperature of the hot plate from room temperature to a set temperature (about several hundred degrees C.). In the heat treatment apparatus, it is necessary to process substrates having different set temperatures for each lot. Therefore, when the set temperature (t1) of the substrate to be processed next is higher than the set temperature (t2) of the substrate being processed, the temperature of the hot plate is again raised from the set temperature t2 to the set temperature t1. It took time.

  In addition, in recent years, with further miniaturization of the concavo-convex pattern, temperature fluctuations of the hot plate when the substrate is heated are likely to affect the variation of the concavo-convex pattern. However, immediately after the temperature of the hot plate reaches the set temperature, the atmospheric temperature of the hot plate is not adapted to the temperature of the hot plate. Therefore, even if the temperature of the hot plate reaches the set temperature, a waiting time has occurred until the atmospheric temperature of the hot plate is stabilized.

  Therefore, the present disclosure provides a heat treatment apparatus, a temperature adjustment method, and a computer-readable device capable of increasing the substrate processing efficiency by shortening the heating time of the hot plate and quickly stabilizing the atmospheric temperature of the hot plate. A simple recording medium will be described.

  A heat treatment apparatus according to one aspect of the present disclosure includes a hot plate configured to apply heat to a substrate, a first heater configured to heat the hot plate, and a voltage to the first heater. A power supply configured to apply, and a transformer configured to change a voltage applied from the power supply to the first heater between a power supply voltage of the power supply and a boosted voltage obtained by boosting the power supply voltage; A first temperature sensor configured to measure the temperature of the hot plate and a control unit, wherein the control unit is a heat whose set temperature of the substrate to be processed next is measured by the first temperature sensor. A first process for controlling the transformer to change the voltage applied to the first heater from the power source to the boost voltage when the temperature is higher than the measured temperature of the plate; When the measured temperature of the hot plate measured by the temperature sensor reaches a predetermined target temperature, By controlling the divider, to execute a second process for changing the voltage applied from the power source to the first heater to the power supply voltage.

  In the heat treatment apparatus according to one aspect of the present disclosure, the control unit controls the transformer when the set temperature of the substrate to be processed next is higher than the measured temperature of the hot plate measured by the first temperature sensor. Then, the first process of changing the voltage applied from the power source to the first heater to the boosted voltage is executed. Therefore, when the boosted voltage is applied to the first heater, the power applied to the first heater increases. Accordingly, since the amount of heat applied from the first heater to the hot plate increases, the time for the hot plate to reach the target temperature is shortened. Further, since the amount of heat applied to the surroundings from the first heater increases, the temperature of the hot plate atmosphere rises early. As a result, the heating time of the hot plate can be shortened and the ambient temperature of the hot plate can be quickly stabilized, so that the processing efficiency of the substrate can be increased.

  By the way, when applying only the boost voltage to the first heater, it is necessary to limit the power applied to the first heater in order to keep the temperature of the hot plate constant after the hot plate reaches the target temperature. . Therefore, the higher the boost voltage, the smaller the output from the transformer to the first heater, and it becomes difficult to control the transformer. However, in the heat treatment apparatus according to one aspect of the present disclosure, the control unit, after the first processing, when the measured temperature of the hot plate measured by the first temperature sensor reaches a predetermined target temperature, The transformer is controlled to execute a second process for changing the voltage applied from the power source to the first heater to the power source voltage. Therefore, in keeping the temperature of the hot plate after reaching the target temperature constant, a decrease in the output of the transformer is suppressed. Therefore, the transformer can be stably operated.

  A heat treatment apparatus according to one aspect of the present disclosure includes a housing case configured to allow a hot plate to be taken in and out, a second heater configured to heat the housing case, and a temperature of the housing case And a second temperature sensor configured to do so, wherein the power source is configured to apply a voltage to the second heater as well, and the transformer is applied from the power source to the first heater. The voltage applied to the second heater from the first transformer module configured to be able to change the voltage between the power supply voltage and the first boosted voltage obtained by boosting the power supply voltage. And a second transformer module configured to be changeable between the second boosted voltage obtained by boosting the power supply voltage, and the control unit sets the first set temperature of the substrate to be processed to the first When the temperature is higher than the measured temperature of the hot plate measured by the temperature sensor, the first change is made. A first process for controlling the module to change the voltage applied to the first heater from the power source to the first boosted voltage, and a hot plate measured by the first temperature sensor after the first process A second process for controlling the first transformer module to change the voltage applied from the power source to the first heater to the power source voltage when the measured temperature of the first temperature reaches the first target temperature; When the set temperature of the body is higher than the measured temperature of the housing case measured by the second temperature sensor, the voltage applied to the second heater from the power source is controlled by controlling the second transformer module. A third process for changing the boosted voltage to the second boosted voltage, and the second process when the measured temperature of the housing case measured by the second temperature sensor reaches a predetermined second target temperature after the third process. The transformer module is controlled and applied from the power source to the second heater. Voltage may perform a fourth process of changing to the power supply voltage that. In this case, both the amount of heat applied from the first heater to the heat plate and the amount of heat applied from the second heater to the housing case increase, so that the heat plate and the housing case are the first and second, respectively. The time to reach the target temperature is further shortened. In addition, the amount of heat applied to the surroundings from the first and second heaters is increased, and the housing is housed to contain the heat plate, so that heat is prevented from radiating to the outside. The temperature rises earlier. As a result, the substrate processing efficiency can be further increased. In addition, it is possible to stably operate the transformer (first and second transformer modules).

  A heat treatment apparatus according to one aspect of the present disclosure includes a housing case configured to allow a hot plate to be taken in and out, a second heater configured to heat the housing case, and a temperature of the housing case And a power source is configured to apply a voltage to the second heater, and the control unit is configured to control the housing of the housing in the first process. When the set temperature is higher than the measured temperature of the housing case measured by the second temperature sensor, the voltage applied to the first and second heaters from the power source is set to the boost voltage by controlling the transformer. In the second process, when the measured temperature of the housing case measured by the second temperature sensor reaches a predetermined target temperature, the transformer is controlled to supply the first and second from the power source. The voltage applied to the heater may be changed to a power supply voltage. In this case, since the amount of heat applied from the first heater to the hot plate and the amount of heat applied from the second heater to the housing case both increase, the time required for the hot plate and the housing case to reach the target temperature. Is shortened more. In addition, the amount of heat applied to the surroundings from the first and second heaters is increased, and the housing is housed to contain the heat plate, so that heat is prevented from radiating to the outside. The temperature rises earlier. As a result, the substrate processing efficiency can be further increased. In addition, the transformer can be stably operated.

  The heat treatment apparatus according to one aspect of the present disclosure further includes an output circuit unit configured to feedback control the first heater by a PID control operation, and the control unit includes a first temperature in the first process. The output circuit unit is operated based on the first control parameter until the measured temperature of the hot plate measured by the sensor reaches a control temperature lower than the target temperature, and the heat measured by the first temperature sensor. After the measured temperature of the plate reaches the control temperature, the output circuit unit may be operated based on a second control parameter different from the first control parameter. In this case, the rate of temperature rise after the measured temperature of the hot plate reaches the control temperature can be made smaller than the rate of temperature rise until the measured temperature of the hot plate reaches the control temperature. Therefore, it becomes difficult for the temperature of the hot plate to overshoot.

  The transformer includes a voltage applied to the first heater from the power supply, a power supply voltage, a first boosted voltage obtained by boosting the power supply voltage, and a second voltage obtained by boosting the power supply voltage and lower than the first boosted voltage. The control unit is configured to be able to change between the step-up voltage and the control unit until the measurement temperature of the hot plate measured by the first temperature sensor reaches a control temperature lower than the target temperature in the first process. The voltage applied to the first heater from the power source is changed to the first boosted voltage by controlling the transformer, and the measured temperature of the hot plate measured by the first temperature sensor has reached the control temperature. Later, the transformer may be controlled to change the voltage applied from the power source to the first heater to the second boosted voltage. In this case, the rate of temperature rise after the measured temperature of the hot plate reaches the control temperature can be made smaller than the rate of temperature rise until the measured temperature of the hot plate reaches the control temperature. Therefore, it becomes difficult for the temperature of the hot plate to overshoot.

  The transformer includes a voltage applied to the first heater from the power supply, a power supply voltage, a first boosted voltage obtained by boosting the power supply voltage, and a second voltage obtained by boosting the power supply voltage and lower than the first boosted voltage. In the first process, the control unit is configured such that the set temperature of the substrate to be processed next is higher than the measured temperature of the hot plate measured by the first temperature sensor. In this case, the voltage applied to the first heater from the power source is changed to the first boosted voltage by controlling the transformer, and the measurement of the hot plate measured by the first temperature sensor in the second process. When the temperature reaches a predetermined target temperature, the voltage applied to the first heater from the power source may be changed to the second boosted voltage by controlling the transformer. In this case as well, a decrease in the output of the transformer is suppressed when the temperature of the hot plate after reaching the target temperature is kept constant. Therefore, the transformer can be stably operated.

  A temperature adjustment method according to another aspect of the present disclosure is a method of adjusting a temperature of a hot plate configured to apply heat to a substrate, and a set temperature of a substrate to be processed next is measured by a temperature sensor. A first step of changing, by a transformer, a voltage applied from a power source to a heater for heating the hot plate to a boosted voltage obtained by boosting the power source voltage of the power source when the temperature is higher than a measured temperature of the hot plate; After the first step, when the measured temperature of the hot plate measured by the temperature sensor reaches a predetermined target temperature, the voltage applied from the power source to the heater is changed to the power source voltage by the transformer. Process.

  In the temperature adjustment method according to another aspect of the present disclosure, in the first step, when the set temperature of the substrate to be processed next is higher than the measurement temperature of the hot plate measured by the temperature sensor, the hot plate is heated. The voltage applied from the power supply to the heater is changed to a boosted voltage obtained by boosting the power supply voltage of the power supply by the transformer. Therefore, when the boosted voltage is applied to the heater, the power applied to the heater increases. Accordingly, since the amount of heat applied from the heater to the hot plate increases, the time for the hot plate to reach the target temperature is shortened. In addition, since the amount of heat applied from the heater to the surrounding area increases, the temperature of the hot plate atmosphere rises early. As a result, the heating time of the hot plate can be shortened and the ambient temperature of the hot plate can be quickly stabilized, so that the processing efficiency of the substrate can be increased.

  When only the boost voltage is applied to the heater, it is necessary to limit the power applied to the heater in order to keep the temperature of the hot plate constant after the hot plate reaches the target temperature. For this reason, the higher the boost voltage, the smaller the output from the transformer to the heater, making it difficult to control the transformer. However, in the temperature adjustment method according to another aspect of the present disclosure, the voltage applied from the power source to the heater is changed to the power source voltage by the transformer in the second step after the first step. Therefore, in keeping the temperature of the hot plate after reaching the target temperature constant, a decrease in the output of the transformer is suppressed. Therefore, the transformer can be stably operated.

  A temperature adjustment method according to another aspect of the present disclosure is a method of adjusting the temperature of a hot plate configured to apply heat to a substrate in a housing, wherein a set temperature of a substrate to be processed next is The first boosted voltage obtained by boosting the power supply voltage of the power source to the voltage applied from the power source to the first heater that heats the hot plate when the temperature is higher than the measured temperature of the hot plate measured by the first temperature sensor The first step of changing by the first transformer module, and after the first step, when the measured temperature of the hot plate measured by the first temperature sensor reaches a predetermined first target temperature The second step of changing the voltage applied from the power source to the first heater to the power source voltage by the first transformer module, and the housing case in which the set temperature of the housing case is measured by the second temperature sensor If the measured temperature is higher than A third step of changing the voltage applied from the power source to the second heater that heats the second heater to a second boosted voltage obtained by boosting the power source voltage of the power source by the second transformer module, and after the third step When the measured temperature of the housing case measured by the second temperature sensor reaches a predetermined second target temperature, the voltage applied from the power supply to the second heater is changed to the power supply voltage. And a fourth step that changes depending on the module.

  In the temperature adjustment method according to another aspect of the present disclosure, in the first step, when the set temperature of the substrate to be processed next is higher than the measurement temperature of the hot plate measured by the first temperature sensor, The voltage applied from the power source to the first heater for heating the plate is changed to the first boosted voltage obtained by boosting the power source voltage of the power source by the first transformer module. Therefore, when the boosted voltage is applied to the first heater, the power applied to the first heater increases. Similarly, in the third step, the power applied to the second heater increases. Since both the amount of heat applied from the first heater to the heat plate and the amount of heat applied from the second heater to the housing case increase, the heat plate and the housing case respectively have the first and second target temperatures. The time to reach is shortened. In addition, the amount of heat applied to the surroundings from the first and second heaters is increased, and the housing is housed to contain the heat plate, so that heat is prevented from radiating to the outside. The temperature rises earlier. As a result, the heating time of the hot plate can be shortened and the atmospheric temperature of the hot plate can be stabilized at an early stage, so that the substrate processing efficiency can be further increased.

  By the way, when only the first and second boosted voltages are applied to the first and second heaters, respectively, the temperatures of the hot plate and the housing are kept constant after reaching the first and second target temperatures, respectively. In order to hold the power, it is necessary to limit the power applied to the first and second heaters. Therefore, the higher the first and second boosted voltages, the smaller the outputs from the first and second transformer modules to the first and second heaters, making it difficult to control each transformer module. However, in the temperature control method according to another aspect of the present disclosure, after the first step, in the second step, the voltage applied from the power source to the first heater is changed to the power source voltage by the first transformer module. It has changed. Further, after the third step, in the fourth step, the voltage applied from the power source to the second heater is changed to the power source voltage by the second transformer module. Therefore, when the temperature of the hot plate and the housing housing after reaching the first and second target temperatures is kept constant, the output decrease of each transformer module is suppressed. Therefore, it becomes possible to operate each transformation module stably.

  A temperature adjustment method according to another aspect of the present disclosure is a method of adjusting a temperature of a hot plate configured to apply heat to a substrate in a housing case, and a set temperature of the housing case is measured by a temperature sensor. The voltage applied from the power source to the first heater for heating the hot plate and the voltage applied from the power source to the second heater for heating the housing case when the measured temperature is higher than the measured temperature of the housing case. A first step of changing the power source voltage of the power source to a boosted voltage by the transformer, and after the first step, the measured temperature of the housing case measured by the temperature sensor has reached a predetermined target temperature And a second step of changing the voltage applied from the power source to the first and second heaters to the power source voltage by the transformer.

  In the temperature adjustment method according to another aspect of the present disclosure, in the first step, when the set temperature of the housing case is higher than the measurement temperature of the housing case measured by the temperature sensor, the heating plate is heated. The voltage applied from the power source to the first heater and the voltage applied from the power source to the second heater that heats the housing are changed by the transformer to a boosted voltage obtained by boosting the power source voltage of the power source. Therefore, when the boosted voltage is applied to the first and second heaters, the power applied to the first and second heaters increases. Since both the amount of heat applied from the first heater to the heat plate and the amount of heat applied from the second heater to the housing case increase, the time required for the heat plate and the housing case to reach the target temperature is further shortened. Is done. In addition, the amount of heat applied to the surroundings from the first and second heaters is increased, and the housing is housed to contain the heat plate, so that heat is prevented from radiating to the outside. The temperature rises earlier. As a result, the heating time of the hot plate can be shortened and the atmospheric temperature of the hot plate can be stabilized at an early stage, so that the substrate processing efficiency can be further increased.

  By the way, in the case where only the boosted voltage is applied to the first and second heaters, the first and second heaters are applied to keep the temperature constant after the hot plate and the housing case reach the target temperature. It is necessary to limit the power that is generated. Therefore, the higher the boost voltage, the smaller the output from the transformer to the first and second heaters, making it difficult to control the transformer. However, in the temperature adjustment method according to another aspect of the present disclosure, after the first step, in the second step, when the measured temperature of the housing case measured by the temperature sensor reaches a predetermined target temperature. The voltage applied from the power source to the first and second heaters is changed to the power source voltage by the transformer. For this reason, a decrease in the output of the transformer is suppressed in keeping the temperature of the hot plate and the housing housing after reaching the target temperature constant. Therefore, the transformer can be stably operated.

  In the first step, the first output circuit unit configured to feedback-control the heater by the PID control operation until the measured temperature of the hot plate measured by the temperature sensor reaches a control temperature lower than the target temperature. The output circuit unit is operated based on a second control parameter different from the first control parameter after the measured temperature of the hot plate measured by the temperature sensor reaches the control temperature. It may be performed. In this case, the rate of temperature rise after the measured temperature of the hot plate reaches the control temperature can be made smaller than the rate of temperature rise until the measured temperature of the hot plate reaches the control temperature. Therefore, it becomes difficult for the temperature of the hot plate to overshoot.

  In the first step, the first boosted voltage obtained by boosting the voltage applied to the heater from the power source until the measured temperature of the hot plate measured by the temperature sensor reaches a control temperature lower than the target temperature. And the voltage applied to the heater from the power source is boosted after the measured temperature of the hot plate measured by the temperature sensor reaches the control temperature, and the first boosted voltage is higher than the first boosted voltage. Changing to a lower second boosted voltage by a transformer may be performed. In this case, the rate of temperature rise after the measured temperature of the hot plate reaches the control temperature can be made smaller than the rate of temperature rise until the measured temperature of the hot plate reaches the control temperature. Therefore, it becomes difficult for the temperature of the hot plate to overshoot.

  In the first step, when the set temperature of the substrate to be processed next is higher than the measured temperature of the hot plate measured by the temperature sensor, the voltage applied from the power source to the heater is When the measured temperature of the hot plate measured by the temperature sensor reaches a predetermined target temperature in the second step, the voltage applied from the power source to the heater is changed to a boosted voltage of 1 by the transformer. The power supply voltage may be boosted and changed to a second boosted voltage lower than the first boosted voltage by the transformer. In this case as well, a decrease in the output of the transformer is suppressed when the temperature of the hot plate after reaching the target temperature is kept constant. Therefore, the transformer can be stably operated.

  A computer-readable recording medium according to another aspect of the present disclosure records a program for causing a heat treatment apparatus to execute the temperature adjustment method. In the computer-readable recording medium according to another aspect of the present disclosure, as in the temperature adjustment method described above, the substrate is obtained by shortening the heating time of the hot plate and early stabilizing the ambient temperature of the hot plate. It is possible to improve the processing efficiency. In this specification, a computer-readable recording medium includes a non-transitory tangible medium (non-transitory computer recording medium) (for example, various main storage devices or auxiliary storage devices) and a propagation signal (transitory computer recording medium). (E.g., a data signal that can be provided over a network).

  According to the heat treatment apparatus, the temperature adjustment method, and the computer-readable recording medium according to the present disclosure, the processing efficiency of the substrate is improved by shortening the heating time of the hot plate and early stabilization of the atmospheric temperature of the hot plate. It becomes possible to raise.

FIG. 1 is a perspective view showing a substrate processing system. 2 is a cross-sectional view taken along line II-II in FIG. 3 is a cross-sectional view taken along line III-III in FIG. FIG. 4 is a cross-sectional view of the heat treatment unit as viewed from the side. FIG. 5 is a cross-sectional view of the heat treatment unit as viewed from above. FIG. 6 is a block diagram showing the heat treatment unit and the controller. FIG. 7 is a schematic diagram illustrating a hardware configuration of the controller. FIG. 8 is a flowchart for explaining a method of adjusting the temperature of the hot plate.

  Since the embodiment according to the present disclosure described below is an example for explaining the present invention, the present invention should not be limited to the following contents. In the following description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

[Substrate processing system]
As shown in FIG. 1, a substrate processing system 1 (substrate processing apparatus) includes a coating and developing apparatus 2 (substrate processing apparatus), an exposure apparatus 3, and a controller 10 (control unit; heat treatment apparatus). The exposure apparatus 3 performs an exposure process (pattern exposure) of the resist film R (see FIG. 4) formed on the surface of the wafer W (substrate). Specifically, the energy beam is selectively irradiated onto the exposure target portion of the resist film (photosensitive coating) by a method such as immersion exposure. Examples of the energy rays include ArF excimer laser, KrF excimer laser, g-line, i-line, and extreme ultraviolet (EUV).

  The coating and developing apparatus 2 performs a process of forming a resist film R on the surface of the wafer W before the exposure process by the exposure apparatus 3, and performs a developing process of the resist film R after the exposure process. The wafer W may have a disk shape, a part of a circle may be cut off, or may have a shape other than a circle such as a polygon. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the wafer W may be about 200 mm to 450 mm, for example.

  As shown in FIGS. 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

  As shown in FIGS. 1 and 3, the carrier block 4 includes a carrier station 12 and a carry-in / carry-out unit 13. The carrier station 12 supports a plurality of carriers 11. The carrier 11 accommodates at least one wafer W in a sealed state. On the side surface 11a of the carrier 11, an opening / closing door (not shown) for taking in and out the wafer W is provided. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading unit 13 side.

  The carry-in / carry-out unit 13 is located between the carrier station 12 and the processing block 5. The carry-in / carry-out unit 13 includes a plurality of opening / closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening / closing door of the carrier 11 faces the opening / closing door 13a. By opening the open / close door 13a and the open / close door on the side surface 11a at the same time, the inside of the carrier 11 and the inside of the carry-in / out unit 13 are communicated. The carry-in / carry-out unit 13 incorporates a delivery arm A1. The transfer arm A1 takes out the wafer W from the carrier 11 and transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier 11.

  As illustrated in FIGS. 1 and 2, the processing block 5 includes a BCT module 14, an HMCT module 15, a COT module 16, and a DEV module 17. The BCT module 14 is a lower layer film forming module. The HMCT module 15 is an intermediate film (hard mask) forming module. The COT module 16 is a resist film forming module. The DEV module 17 is a development processing module. These modules are arranged in the order of the DEV module 17, the BCT module 14, the HMCT module 15, and the COT module 16 from the floor side.

  The BCT module 14 is configured to form a lower layer film on the surface of the wafer W. The BCT module 14 incorporates a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A2 (see FIG. 2) for transferring the wafer W to these units. . The coating unit is configured to form a coating film by coating a coating solution for forming a lower layer film on the surface of the wafer W. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. A specific example of the heat treatment performed in the BCT module 14 is a heat treatment for curing the coating film to form a lower layer film. Examples of the lower layer film include an antireflection (SiARC) film.

  The HMCT module 15 is configured to form an intermediate film on the lower layer film. The HMCT module 15 includes a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A3 (see FIG. 2) that transfers the wafer W to these units. . The coating unit is configured to apply a coating liquid for forming an intermediate film on the surface of the wafer W to form a coating film. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. Specific examples of the heat treatment performed in the HMCT module 15 include a heat treatment for curing the coating film to form an intermediate film. Examples of the intermediate film include an SOC (Spin On Carbon) film and an amorphous carbon film.

  The COT module 16 is configured to form a thermosetting and photosensitive resist film R on the intermediate film. As shown in FIGS. 2 and 3, the COT module 16 includes a plurality of coating units U1, a plurality of heat treatment units U2 (heat treatment apparatus), and a transfer arm A4 that transfers the wafer W to these units. ing. The coating unit U1 is configured to apply a processing liquid (resist agent) for forming a resist film on the intermediate film to form a coating film. The heat treatment unit U2 is configured to heat the wafer W by, for example, a hot plate, and to perform the heat treatment by cooling the heated wafer W by, for example, a cooling plate. Specific examples of the heat treatment performed in the COT module 16 include a heat treatment (PAB: Pre Applied Bake) for curing the coating film to form a resist film. Details of the heat treatment unit U2 will be described later.

  The DEV module 17 is configured to perform development processing of the exposed resist film. The DEV module 17 includes a plurality of developing units (not shown), a plurality of heat treatment units (not shown), a transfer arm A5 that transfers the wafer W to these units, and the wafer W without passing through these units. And a direct transfer arm A6 for transferring the. The developing unit is configured to partially remove the resist film R to form a resist pattern. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. Specific examples of the heat treatment performed in the DEV module 17 include a heat treatment before development processing (PEB: Post Exposure Bake), a heat treatment after development processing (PB: Post Bake), and the like.

  As shown in FIGS. 2 and 3, a shelf unit U <b> 10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is provided so as to extend from the floor surface to the HMCT module 15, and is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10.

  A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is provided so as to extend from the floor surface to the upper part of the DEV module 17, and is partitioned into a plurality of cells arranged in the vertical direction.

  The interface block 6 incorporates a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 is configured to take out the wafer W of the shelf unit U11 and deliver it to the exposure apparatus 3, and to receive the wafer W from the exposure apparatus 3 and return it to the shelf unit U11.

  The controller 10 controls the substrate processing system 1 partially or entirely. Details of the controller 10 will be described later.

[Configuration of heat treatment unit]
Next, the configuration of the heat treatment unit U2 will be described in more detail with reference to FIGS. In this specification, the configuration of the heat treatment unit U2 of the COT module 16 is described, but the configurations of the heat treatment units of the BCT module 14, the HMCT module 15, and the DEV module 17 are also equivalent to the heat treatment unit U2.

  As shown in FIGS. 4 and 5, the heat treatment unit U <b> 2 includes a heating unit 110 that heats the wafer W and a cooling unit 120 that cools the wafer W in the housing 100. A loading / unloading port 101 for carrying the wafer W into the housing 100 and carrying the wafer W out of the housing 100 is formed on both side walls of the portion corresponding to the cooling unit 120 in the housing 100. (See FIG. 5).

  The heating unit 110 includes a lid portion 111 (accommodating housing) and a hot plate housing portion 112 (accommodating housing). The lid portion 111 is located above the hot plate housing portion 112 and can be moved up and down between an upper position separated from the hot plate housing portion 112 and a lower position placed on the hot plate housing portion 112. It is. The lid part 111 constitutes the processing chamber PR together with the hot plate accommodating part 112 when in the lower position.

  An exhaust part 111 a for exhausting gas from the processing chamber PR is provided at the center of the lid part 111. Inside the lid 111, there are a heater 111 b (second heater) configured to heat the lid 111 and a temperature sensor 111 c (second temperature) configured to measure the temperature of the lid 111. Sensor).

  The hot plate housing portion 112 has a cylindrical shape, and houses the hot plate 113 therein. The outer peripheral portion of the hot plate 113 is supported by a support member 114. The outer periphery of the support member 114 is supported by a cylindrical support ring 115. A gas supply port 115 a that opens upward is formed on the upper surface of the support ring 115. The gas supply port 115a is configured to eject an inert gas into the processing chamber PR.

  As shown in FIG. 5, the hot plate 113 is a flat plate having a circular shape. The outer shape of the hot plate 113 is larger than the outer shape of the wafer W. The hot plate 113 is formed with three through-holes HL extending in the thickness direction (see FIG. 5). At least three support pins PN that support the wafer W are provided upright on the upper surface of the hot plate 113. The height of the support pin PN may be about 100 μm, for example. A heater 116 (first heater) configured to heat the hot plate 113 is disposed on the lower surface of the hot plate 113. Inside the hot plate 113, a temperature sensor 117 (first temperature sensor) configured to measure the temperature of the hot plate 113 is disposed.

  As shown in FIG. 4, an elevating mechanism 119 is disposed below the hot plate 113. The elevating mechanism 119 includes a motor 119a disposed outside the housing 100, and three elevating pins 119b that move up and down by the motor 119a. The elevating pins 119b are respectively inserted into the corresponding through holes HL. When the tip of the lift pins 119b protrudes above the hot plate 113 and the support pins PN, the wafer W can be placed on the tips of the lift pins 119b. The wafer W placed on the tip of the lift pins 119b moves up and down as the lift pins 119b move up and down.

  As shown in FIGS. 4 and 5, the cooling unit 120 is located adjacent to the heating unit 110. The cooling unit 120 includes a cooling plate 121 that cools the mounted wafer W. As shown in FIG. 5, the cooling plate 121 is a flat plate having a substantially rectangular shape. An end of the cooling plate 121 on the heating unit 110 side has an arc shape protruding toward the heating unit 110. The cooling plate 121 incorporates a cooling member 121a such as a Peltier element. The cooling member 121a can adjust the cooling plate 121 to a predetermined set temperature.

  The cooling plate 121 is attached to a rail 122 extending toward the heating unit 110 side. The cooling plate 121 is driven by the driving unit 123 and can move horizontally on the rail 122. The cooling plate 121 that has moved to the heating unit 110 side is located above the heating plate 113.

  As shown in FIG. 5, the cooling plate 121 has two slits 124 extending along the extending direction of the rail 122. The slit 124 is formed to extend from the end of the cooling plate 121 on the heating unit 110 side to the vicinity of the center of the cooling plate 121. The slit 124 prevents interference between the cooling plate 121 moved to the heating unit 110 side and the elevating pins 119b protruding on the heating plate 113.

  As shown in FIG. 4, an elevating mechanism 125 is disposed below the cooling plate 121. The elevating mechanism 125 includes a motor 125a disposed outside the housing 100 and three elevating pins 125b that move up and down by the motor 125a. The elevating pins 125b are configured to be able to pass through the slits 124, respectively. When the tip of the lift pins 125b protrudes above the cooling plate 121, the wafer W can be placed on the tip of the lift pins 125b. The wafer W placed on the tip of the lift pins 125b moves up and down as the lift pins 125b move up and down.

  As shown in FIG. 4, the heat treatment unit U <b> 2 includes a transformer 200 and a direct-current or alternating-current power supply PS configured to apply a voltage to the heaters 111 b and 116 via the transformer 200. That is, the transformer 200 is disposed between the power source PS and the heaters 111b and 116. The transformer 200 includes transformer modules 210 and 220 as shown in FIG.

The voltage transformation module 210 (first voltage transformation module) includes relays 211 and 213, a step-up transformer 212, and an output circuit unit 214. The relay 211 is connected to the power source PS, and is configured to be able to turn on / off the output of the power source voltage V _PS of the power source _{PS to} the output circuit unit 214. The step-up transformer 212 boosts the power supply voltage V _PS of the power source PS to generate a boost voltage V _B1 . The relay 213 is connected to the step-up transformer 212 and is configured to be able to turn on / off the output of the step-up voltage V _{B1 to} the output circuit unit 214.

The output circuit unit 214 is configured to convert input power from the relays 211 and 213 into desired output power and apply the output power to the heater 116. For example, the output circuit unit 214 performs PID control on the input power based on the deviation between the target temperature T _HPt of the hot plate 113 and the measured temperature T _HPm of the hot plate 113 by the temperature sensor 117, and the measured temperature T _HPm is the target temperature T _{HPm. The} output power is feedback-controlled so as to approach _HPt . Thus, the voltage transformation module 210 is configured to be able to change the voltage applied to the heater 116 from the power supply PS between the power supply voltage _VPS and the boosted voltage _VB1 .

The voltage transformation module 220 (second voltage transformation module) includes relays 221 and 223, a step-up transformer 222, and an output circuit unit 224. The relay 221 is connected to the power source PS, and is configured to be able to turn on / off the output of the power source voltage V _PS of the power source _{PS to} the output circuit unit 224. Step-up transformer 222, generates a boosted voltage _{V B2} by boosting the power supply voltage _{V PS} of the power supply PS. The relay 223 is connected to the step-up transformer 222 and configured to be able to turn on / off the output of the step-up voltage _{VB2 to} the output circuit unit 224.

The output circuit unit 224 is configured to convert input power from the relays 221 and 223 into desired output power and apply the output power to the heater 111b. For example, the output circuit unit 224 performs PID control on the input power based on the deviation between the target temperature T _Lt of the lid unit 111 and the measured temperature T _Lm of the lid unit 111 by the temperature sensor 111c, and the measured temperature T _Lm is the target temperature T _{Lm. The} output power is feedback controlled so as to approach _LPt . Thus, the voltage transformation module 220 is configured to be able to change the voltage applied to the heater 111b from the power supply PS between the power supply voltage _VPS and the boosted voltage _VB2 .

[Controller configuration]
As illustrated in FIG. 6, the controller 10 includes a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely the functions of the controller 10 divided into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller 10 is divided into such modules. Each functional module is not limited to that realized by executing a program, but is realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) in which this is integrated. May be.

  The reading unit M1 reads a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the substrate processing system 1. As the recording medium RM, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk may be used.

The storage unit M2 stores various data. The storage unit M2 includes, for example, the program read from the recording medium RM in the reading unit M1 and the measured temperatures T _HPm and T _Lm of the hot plate 113 and the lid unit 111 input from the temperature sensors 111c and 117, respectively. , the set temperature _{T Wset} for heat treatment of the set wafer W for each lot, the set temperature _{T Lset} for heat treatment of the lid portion 111 that is set for each lot, for PID control in the output circuit 214 and 224 Control parameters (proportional term, integral term, derivative term), etc. are stored. The set temperatures T _SET , T _Lset and control parameters may be input via, for example, an external input device (not shown).

  The processing unit M3 processes various data. The processing unit M3, for example, based on various data stored in the storage unit M2, each unit of the substrate processing system 1 (for example, lifting mechanisms 119, 125, driving unit 123, relays 211, 213, 221, 223, and output) A signal for operating the circuit portions 214 and 224) is generated.

  The instruction unit M4 sends the signal generated in the processing unit M3 to each unit of the substrate processing system 1 (for example, the lifting mechanisms 119 and 125, the driving unit 123, the relays 211, 213, 221, and 223, and the output circuit units 214 and 224). Send. Specifically, the instruction unit M4 transmits an ascending signal or a descending signal to the motor 119a and moves the lifting pin 119b up and down. The instruction unit M4 transmits an ascending signal or a descending signal to the motor 125a, and moves the lifting pin 125b up and down. The instruction unit M4 transmits an ON / OFF signal to each of the relays 211, 213, 221, and 223, and switches input power to the output circuit units 214 and 224. The instruction unit M4 transmits a power conversion signal to the output circuit unit 214, and converts the input voltage into a predetermined output voltage by changing control parameters (proportional term, integral term, derivative term) for PID control, for example. To do.

  The hardware of the controller 10 is configured by one or a plurality of control computers, for example. The controller 10 includes, for example, a circuit 10A illustrated in FIG. 7 as a hardware configuration. The circuit 10A may be composed of electric circuit elements (circuitry). Specifically, the circuit 10A includes a processor 10B, a memory 10C, a storage 10D, a driver 10E, and an input / output port 10F. The processor 10B executes the program in cooperation with at least one of the memory 10C and the storage 10D, and executes the input / output of signals through the input / output port 10F, thereby configuring each functional module described above. The driver 10 </ b> E is a circuit that drives various devices of the substrate processing system 1. The input / output port 10F performs input / output of signals between the driver 10E and various devices of the substrate processing system 1.

  In the present embodiment, the substrate processing system 1 includes one controller 10, but may include a controller group (control unit) including a plurality of controllers 10. When the substrate processing system 1 includes a controller group, each of the functional modules may be realized by a single controller 10 or may be realized by a combination of two or more controllers 10. . When the controller 10 is composed of a plurality of computers (circuit 10A), each of the above functional modules may be realized by one computer (circuit 10A), or two or more computers (circuit 10A). ) May be realized. The controller 10 may have a plurality of processors 10B. In this case, each of the functional modules may be realized by one processor 10B, or may be realized by a combination of two or more processors 10B.

[Temperature adjustment method]
Then, with reference to Fig.8 (a), the temperature control method of the hot plate 113 in the heat processing unit U2 is demonstrated. First, the controller 10 determines whether or not the set temperature T _{Wset of the} wafer W to be processed next is higher than the measured temperature T _HPm of the hot plate 113 measured by the temperature sensor 117 (step S11). The set temperature T _Wset can be various temperatures depending on the wafer W to be processed, but may be about 50 ° C. to 450 ° C., for example. If the set temperature T _Wset is _{equal to} or lower than the measured temperature T _HPm (NO in step S11), the temperature adjustment process for the hot plate 113 is terminated.

On the other hand, when the set temperature T _Wset is higher than the measured temperature T _HPm (YES in step S11), the controller 10 _turns off the relay 211 and _turns on the relay 213 (step S12). That is, the controller 10 controls the transformation module 210 to change the voltage applied from the power source PS to the heater 116 to the boost voltage V _B1 . Next, the controller 10 determines whether or not the measured temperature T _HPm of the hot plate 113 measured by the temperature sensor 117 has reached the target temperature T _HPt (step S13). Since the purpose of adjusting the temperature of the hot plate 113 is to set the temperature of the hot plate 113 to the set temperature T _Wset of the wafer W, the target temperature T _HPt is not _more than the set temperature T _Wset in consideration of overshoot. For example, the temperature may be lower by about 5 ° C. to 10 ° C. than the set temperature T _Wset . If the measured temperature T _HPm has not reached the target temperature T _HPt (NO in step S13), the process waits until the measured temperature T _HPm reaches the target temperature T _HPt .

On the other hand, when the measured temperature T _HPm reaches the target temperature T _HPt (YES in step S13), the controller 10 _turns on the relay 211 and _turns off the relay 213 (step S14). That is, the controller 10 controls the transformation module 210 to change the voltage applied from the power supply PS to the heater 116 to the power supply voltage _VPS .

Then, with reference to FIG.8 (b), the temperature control method of the cover part 111 in the heat processing unit U2 is demonstrated. First, the controller 10 determines whether or not the set temperature T _Lset of the lid 111 is higher than the measured temperature T _Lm of the lid 111 measured by the temperature sensor 111c (step S21). The set temperature T _Lset can be various temperatures depending on the wafer W to be processed, but is generally lower than the set temperature T _Wset , and may be, for example, about 50 ° C. to 350 ° C. When the set temperature T _Lset is equal to or lower than the measured temperature T _Lm (NO in step S21), the temperature adjustment process for the lid 111 is terminated.

On the other hand, when the set temperature T _Lset is higher than the measured temperature T _Lm (YES in step S21), the controller 10 _turns off the relay 221 and _{turns on} the relay 223 (step S22). That is, the controller 10 controls the transformation module 220 to change the voltage applied from the power source PS to the heater 111b to the boosted voltage _VB2 . Next, the controller 10 determines whether or not the measured temperature T _Lm of the lid 111 measured by the temperature sensor 111c has reached the target temperature T _Lt (step S23). Since the purpose of adjusting the temperature of the lid 111 is to set the temperature of the lid 111 to the set temperature T _Lset of the lid 111, the target temperature T _Lt is less than or equal to the set temperature T _Lset in consideration of overshoot. For example, the temperature may be lower by about 5 ° C. to 10 ° C. than the set temperature T _Lset . If the measured temperature _TLm has not reached the target temperature _TLt (NO in step S23), the process waits until the measured temperature _TLm reaches the target temperature _TLt .

On the other hand, when the measured temperature _TLm reaches the target temperature _TLt (YES in step S23), the controller 10 turns on the relay 221 and turns off the relay 223 (step S24). That is, the controller 10 controls the transformation module 220 to change the voltage applied from the power source PS to the heater 111b to the power source voltage _VPS .

[Action]
In the present embodiment as described above, when the set temperature T _{Wset of the} wafer W to be processed next is higher than the measured temperature T _HPm of the hot plate 113 measured by the temperature sensor 117 (YES in step S11), the controller 10 controls the transformation module 210 to change the voltage applied from the power source PS to the heater 116 to the boosted voltage V _B1 (step S12). Therefore, when the boosted voltage V _B1 is applied to the heater 116, the power applied to the heater 116 increases. Similarly, when the set temperature T _Lset of the lid 111 is higher than the measured temperature T _Lm of the lid 111 measured by the temperature sensor 111c (YES in step S21), the controller 10 controls the transformation module 220. The voltage applied from the power source PS to the heater 111b is changed to the boosted voltage _VB2 (step S22). Therefore, the electric power applied to the heater 111b increases. As described above, both the amount of heat applied from the heater 116 to the hot plate 113 and the amount of heat applied from the heater 111b to the lid 111 increase, so that the hot plate 113 and the lid 111 have the target temperatures T _HPt , T respectively. _The time to reach _Lt is further shortened. In addition, the amount of heat applied to the surroundings from the heaters 111b and 116 increases, and the lid portion 111 accommodates the heat plate 113 together with the heat plate housing portion 112 to suppress heat dissipation to the outside. The ambient temperature of the plate 113 rises earlier. As a result, the heating time of the hot plate 113 can be shortened and the ambient temperature of the hot plate 113 can be stabilized at an early stage, so that the processing efficiency of the wafer W can be further increased.

By the way, when only the boosted voltages V _B1 and V _B2 are applied to the heaters 111b and 116, respectively, the hot plate 113 and the lid part 111 keep these temperatures constant after reaching the target temperatures T _HPt and T _Lt , respectively. It is necessary to limit the power applied to the heaters 111b and 116. Therefore, the higher the boosted voltages V _B1 and V _B2 , the smaller the output from the transformer modules 210 and 220 to the heaters 111 b and 116, making it difficult to control each of the transformer modules 210 and 220. However, in the present embodiment, when the measured temperature T _HPm reaches the target temperature T _HPt (YES in step S13), the controller 10 controls the voltage transformation module 210 so that the voltage applied from the power source PS to the heater 116 is increased. The power supply voltage is changed to _VPS . Similarly, when the measured temperature T _Lm has reached the target temperature T _Lt (YES in step S23), the controller 10 controls the transformation module 220 to change the voltage applied from the power source PS to the heater 111b to the power source voltage V _PS. Has been changed. For this reason, when the temperatures of the hot plate 113 and the lid 111 after reaching the target temperatures T _HPt and T _Lt are kept constant, a decrease in the output of the transformer modules 210 and 220 is suppressed. Therefore, it becomes possible to operate each of the transformation modules 210 and 220 stably.

[Other Embodiments]
As mentioned above, although embodiment concerning this indication was described in detail, you may add various deformation | transformation to said embodiment within the range of the summary of this invention. For example, in step S12, the controller 10 instructs the output circuit unit 214 _until the measured temperature T _HPm of the hot plate 113 measured by the temperature sensor 117 reaches the control temperature T _HPc lower than the target temperature T _HPt . The output circuit unit 214 may perform PID control of the output voltage with the first control parameters (proportional term P _HP1 , integral term I _HP1 , derivative term D _HP1 ). After the measured temperature T _HPm of the hot plate 113 measured by the temperature sensor 117 reaches the control temperature T _HPc , in the same step S12, the controller 10 instructs the output circuit unit 214, and the output circuit unit 214 performs the second operation. The output voltage may be PID controlled with control parameters (proportional term P _HP2 , integral term I _HP2 , derivative term D _HP2 ). If the first control parameter is changed to the second control parameter so that the proportional term P _HP2 becomes larger than the proportional term P _HP1 , the proportional band becomes large, so that overshooting is difficult. If the first control parameter is changed to the second control parameter so that the integral term I _HP2 becomes larger than the integral term I _HP1 , the output decreases in the vicinity of the target temperature T _HPt , so that overshooting is difficult. . If the first control parameter is changed to the second control parameter so that the differential term D _HP2 becomes smaller than the differential term D _HP1 , the output decreases in the vicinity of the target temperature T _HPt , so that overshooting is difficult. . Thus, by setting the second control parameter to a predetermined value with respect to the first control parameter, the rate of temperature rise after the measured temperature T _HPm of the hot plate 113 reaches the control temperature T _HPc is The measured temperature T _HPm of the hot plate 113 can be made smaller than the rate of temperature increase until it reaches the control temperature T _HPc . Therefore, it becomes difficult for the temperature of the hot plate 113 to overshoot.

Also in step S22, in the same manner as described above, the controller 10 instructs the output circuit unit 224, and the measured temperature T _Lm of the lid unit 111 measured by the temperature sensor 111c reaches the control temperature T _Lc lower than the target temperature T _Lt. Until then, the output circuit unit 224 may perform PID control of the output voltage with the first control parameters (proportional term P _L1 , integral term I _L1 , differential term D _L1 ). After the measured temperature T _Lm of the lid 111 measured by the temperature sensor 111c reaches the control temperature T _Lc , in the same step S22, the controller 10 instructs the output circuit unit 224 so that the output circuit unit 224 The output voltage may be PID controlled with control parameters (proportional term P _L2 , integral term I _L2 , derivative term D _L2 ).

In the above embodiment, the voltage value is changed in two stages of the power supply voltage V _PS and the boosted voltages V _B1 and V _B2. However, the voltage value may be changed in stages in three or more stages. For example, in step S12, the voltage applied from the power source PS to the heater 116 is increased until the measured temperature T _HPm of the hot plate 113 measured by the temperature sensor 117 reaches the control temperature T _HPc lower than the target temperature T _HPt. The voltage may be changed by the transformation module 210 to the voltage V _B1 . After the measured temperature T _HPm of the hot plate 113 measured by the temperature sensor 117 reaches the control temperature T _HPc , in the same step S12, the voltage applied from the power source SP to the heater 116 is lower than the boosted voltage V _B1 and the power source. The voltage may be changed by the transformation module 210 to the boosted voltage V _B3 higher than the voltage V _PS . Again, the heating rate after the measured temperature _{T HPM} of the hot plate 113 has reached the control temperature _{T HPc,} than heating rate to the measurement temperature _{T HPM} of the hot plate 113 reaches the control temperature _{T HPc} Can be small. Therefore, it becomes difficult for the temperature of the hot plate 113 to overshoot. Boosted voltage _{V B3} is, for example, may be a 10V~20V about voltage higher than the power supply voltage _{V PS.}

In step S22 as well, as described above, the power supply PS applies the heater 111b until the measured temperature T _Lm of the lid 111 measured by the temperature sensor 111c reaches the control temperature T _Lc lower than the target temperature T _Lt. The voltage may be changed by the transformation module 220 to the boosted voltage _VB2 . After the measured temperature T _Lm of the lid 111 measured by the temperature sensor 111c reaches the control temperature T _Lc , in the same step S22, the voltage applied from the power source SP to the heater 111b is lower than the boost voltage V _B2 and the power source The voltage may be changed by the transformation module 220 to a boosted voltage V _B4 higher than the voltage V _PS . The boosted voltage V _B4 may be, for example, a voltage that is about 10 V to 20 V higher than the power supply voltage V _PS .

In steps S13 and S23, when the hot plate 113 or the lid portion 111 reaches a temperature lower by about 5 ° C. to 10 ° C. than the target temperatures T _HPt and T _Lt , the power plate voltage V _PS may be changed.

In steps S13 and S23, when the hot plate 113 or the lid portion 111 exceeds the target temperatures T _HPt and T _Lt (when overshooting), the power plate voltage V _PS may be changed).

In the above-described embodiment, the transformer 200 includes the two transformer modules 210 and 220, but the transformer 200 may include one transformer module 210. In this case, the output power from the output circuit unit 214 is applied to both the heaters 111b and 116. Therefore, when the set temperature T _Lset of the lid 111 is higher than the measured temperature T _Lm of the lid 111 measured by the temperature sensor 111c, the controller 10 controls the transformer module 210 (transformer 200) to The voltage applied from PS to the heaters 111b and 116 may be changed to the boosted voltage _VB5 . Further, when the measured temperature T _Lm reaches the target temperature T _Lt , the controller 10 controls the voltage transformation module 210 (transformer 200) so that the voltage applied from the power source PS to the heaters 111b and 116 is the power source voltage V _PS. You may change to Also in this case, the amount of heat applied from the heater 116 to the heat plate 113 and the amount of heat applied from the heater 111b to the lid portion 111 both increase, so that the heat plate 113 and the lid portion 111 reach the target temperature T _Lt. Time is shortened. In addition, the amount of heat applied to the surroundings from the heaters 111b and 116 increases, and the lid portion 111 accommodates the heat plate 113 together with the heat plate housing portion 112 to suppress heat dissipation to the outside. The ambient temperature of the plate 113 rises earlier. As a result, the heating time of the hot plate 113 can be shortened and the ambient temperature of the hot plate 113 can be stabilized at an early stage, so that the processing efficiency of the wafer W can be increased. In addition, the transformer module 210 (transformer 200) can be stably operated.

  The lid 111 may not be provided with the heater 111b and the temperature sensor 111c. In this case, the temperature of the hot plate 113 is adjusted, but the temperature of the lid 111 is not adjusted.

In the above embodiment, the step-up transformers 212 and 222 are connected to the previous stage of the relays 213 and 223, respectively, and the step-up transformer is not connected to the previous stage of the relays 211 and 221. Also, step-up transformers may be connected to each other. In this case, the step-up transformers in the previous stage of the relays 211 and 221 step up the power supply voltage V _PS of the power source PS to generate boosted voltages V _B6 and V _B7 . These boosted voltages V _B6 and V _B7 are set lower than the boosted voltages V _B1 and V _B2 by the boost transformers 212 and 222. Also in this case, when the temperatures of the hot plate 113 and the lid 111 after reaching the target temperatures T _HPt and T _Lt are kept constant, a decrease in the output of the transformer modules 210 and 220 is suppressed. Therefore, it becomes possible to operate each of the transformation modules 210 and 220 stably.

  DESCRIPTION OF SYMBOLS 1 ... Substrate processing system, 10 ... Controller (control part; Heat processing apparatus), 100 ... Housing | casing, 110 ... Heating part, 111 ... Cover part (accommodating housing | casing), 111b ... Heater (2nd heater), 111c ... Temperature Sensor (second temperature sensor), 112... Hot plate housing (housing housing), 113... Hot plate, 116 .. heater (first heater), 117... Temperature sensor (first temperature sensor), 200. Transformer, 210, 220 ... Transformer module, 211, 213, 221, 223 ... Relay, 212, 222 ... Step-up transformer, 214, 224 ... Output circuit section, PR ... Processing chamber, PS ... Power supply, RM ... Recording medium, U2 ... heat treatment unit (heat treatment apparatus), W ... wafer (substrate).

Claims (13)

A hot plate configured to impart heat to the substrate;
A first heater configured to heat the hot plate;
A power supply configured to apply a voltage to the first heater;
A voltage applied to the first heater from the power supply, the transformer configured to be changeable between a power supply voltage of the power supply and a boosted voltage obtained by boosting the power supply voltage;
A first temperature sensor configured to measure the temperature of the hot plate;
A control unit,
The controller is
When the set temperature of the substrate to be processed next is higher than the measured temperature of the hot plate measured by the first temperature sensor, the transformer is controlled and applied from the power source to the first heater. A first process for changing the voltage to be the boosted voltage;
After the first process, when the measured temperature of the hot plate measured by the first temperature sensor reaches a predetermined target temperature, the transformer is controlled to supply the first temperature from the power source. A heat treatment apparatus that performs a second process of changing a voltage applied to a heater to the power supply voltage. A housing case configured to allow the heating plate to be taken in and out;
A second heater configured to heat the housing case;
A second temperature sensor configured to measure the temperature of the housing case,
The power source is configured to apply a voltage to the second heater,
The transformer is
A voltage applied to the first heater from the power source, a first transformer module configured to be changeable between the power source voltage and a first boosted voltage obtained by boosting the power source voltage;
A second transformer module configured to change a voltage applied from the power source to the second heater between the power source voltage and a second boosted voltage obtained by boosting the power source voltage; And
The controller is
Next, when the set temperature of the substrate to be processed is higher than the measured temperature of the hot plate measured by the first temperature sensor, the first transformer module is controlled to supply the first power from the power source. A first process of changing a voltage applied to the heater to the first boosted voltage;
After the first process, when the measured temperature of the hot plate measured by the first temperature sensor reaches the first target temperature, the first power transformation module is controlled to control the power source. To a second process for changing the voltage applied to the first heater to the power supply voltage;
When the set temperature of the housing case is higher than the measured temperature of the housing case measured by the second temperature sensor, the second heater is controlled from the power source by controlling the second transformer module. A third process for changing the voltage applied to the second boosted voltage;
After the third process, when the measured temperature of the housing case measured by the second temperature sensor reaches a predetermined second target temperature, the second transformer module is controlled, The heat processing apparatus of Claim 1 which performs the 4th process which changes the voltage applied to the said 2nd heater from the said power supply to the said power supply voltage. A housing case configured to allow the heating plate to be taken in and out;
A second heater configured to heat the housing case;
A second temperature sensor configured to measure the temperature of the housing case,
The power source is configured to apply a voltage to the second heater,
The controller is
In the first process, when the set temperature of the housing case is higher than the measured temperature of the housing case measured by the second temperature sensor, the transformer is controlled to Changing the voltage applied to each of the first and second heaters to the boosted voltage;
In the second process, when the measured temperature of the housing case measured by the second temperature sensor reaches a predetermined target temperature, the transformer is controlled to supply the first and The heat processing apparatus of Claim 1 which changes the voltage applied to a 2nd heater to the said power supply voltage. An output circuit unit configured to feedback-control the first heater by a PID control operation;
The control unit, in the first process,
Operating the output circuit unit based on the first control parameter until the measured temperature of the hot plate measured by the first temperature sensor reaches a control temperature lower than the target temperature;
The output circuit unit is operated based on a second control parameter different from the first control parameter after the measured temperature of the hot plate measured by the first temperature sensor reaches the control temperature. The heat processing apparatus of Claim 1 which performs. The transformer includes a voltage applied from the power source to the first heater, the power source voltage, a first boosted voltage obtained by boosting the power source voltage, the power source voltage boosted, and the first power source voltage. It is configured to be changeable between a second boosted voltage lower than the boosted voltage,
The control unit, in the first process,
The transformer is controlled and applied to the first heater from the power source until the measured temperature of the hot plate measured by the first temperature sensor reaches a control temperature lower than the target temperature. Changing the voltage to the first boosted voltage;
After the measured temperature of the hot plate measured by the first temperature sensor reaches the control temperature, the voltage applied to the first heater from the power source is controlled by controlling the transformer. The heat treatment apparatus according to claim 1, wherein the step of changing to the step-up voltage is performed. The transformer includes a voltage applied from the power source to the first heater, the power source voltage, a first boosted voltage obtained by boosting the power source voltage, the power source voltage boosted, and the first power source voltage. It is configured to be changeable between a second boosted voltage lower than the boosted voltage,
The controller is
In the first process, when the set temperature of the substrate to be processed next is higher than the measured temperature of the hot plate measured by the first temperature sensor, the transformer is controlled to Changing the voltage applied to the first heater to the first boosted voltage;
In the second process, when the measured temperature of the hot plate measured by the first temperature sensor reaches a predetermined target temperature, the transformer is controlled to supply the first heater from the power source. The heat treatment apparatus according to claim 1, wherein a voltage applied to the second boosted voltage is changed to the second boosted voltage. A method of adjusting the temperature of a hot plate configured to apply heat to a substrate,
When the set temperature of the substrate to be processed next is higher than the measured temperature of the hot plate measured by the temperature sensor, the power source voltage of the power source boosts the voltage applied from the power source to the heater that heats the hot plate. A first step of changing to a boosted voltage by means of a transformer;
After the first step, when the measured temperature of the hot plate measured by the temperature sensor reaches a predetermined target temperature, the voltage applied from the power source to the heater is changed to the power source voltage. And a second step of changing by a vessel. A method of adjusting the temperature of a hot plate configured to apply heat to a substrate in a housing case,
When the set temperature of the substrate to be processed next is higher than the measured temperature of the hot plate measured by the first temperature sensor, the voltage applied from the power source to the first heater for heating the hot plate is A first step of changing the power supply voltage of the power supply to a first boosted voltage that is boosted by the first transformer module;
After the first step, when the measured temperature of the hot plate measured by the first temperature sensor reaches a predetermined first target temperature, it is applied to the first heater from the power source. A second step of changing the voltage to the power supply voltage by the first transformer module;
When the set temperature of the housing case is higher than the measured temperature of the housing case measured by a second temperature sensor, a voltage applied from the power source to the second heater that heats the housing case A third step of changing the power supply voltage of the power supply to a boosted second boosted voltage by a second transformer module;
After the third step, when the measured temperature of the housing case measured by the second temperature sensor reaches a predetermined second target temperature, the second heater is applied from the power source. And a fourth step of changing the voltage to the power supply voltage by the second transformer module. A method of adjusting the temperature of a hot plate configured to apply heat to a substrate in a housing case,
When the set temperature of the housing case is higher than the measured temperature of the housing case measured by a temperature sensor, the voltage applied from the power source to the first heater that heats the hot plate and the housing case A first step of changing, by a transformer, a voltage applied from the power source to a second heater to be heated to a boosted voltage obtained by boosting the power source voltage of the power source;
After the first step, when the measured temperature of the housing case measured by the temperature sensor reaches a predetermined target temperature, the voltage applied from the power source to the first and second heaters And a second step of changing by the transformer to the power supply voltage. In the first step,
A first control is performed on the output circuit unit configured to feedback-control the heater by a PID control operation until the measured temperature of the hot plate measured by the temperature sensor reaches a control temperature lower than the target temperature. Operating based on parameters,
After the measured temperature of the hot plate measured by the temperature sensor reaches the control temperature, the output circuit unit is operated based on a second control parameter different from the first control parameter. The temperature control method according to claim 7. In the first step,
A first boosted voltage obtained by boosting the power supply voltage from the power supply to the heater until the measured temperature of the hot plate measured by the temperature sensor reaches a control temperature lower than the target temperature. Changing with the transformer,
After the measured temperature of the hot plate measured by the temperature sensor reaches the control temperature, a voltage applied from the power source to the heater is increased to a voltage lower than the first boosted voltage. The temperature control method according to claim 7, wherein the boosting voltage is changed to 2 by the transformer. In the first step, when a set temperature of a substrate to be processed next is higher than a measured temperature of the hot plate measured by the temperature sensor, a voltage applied from the power source to the heater is changed to the power source. The voltage is changed to the first boosted voltage by the transformer,
In the second step, when the measured temperature of the hot plate measured by the temperature sensor reaches a predetermined target temperature, the voltage applied from the power source to the heater is increased and the power source voltage is increased. The temperature adjustment method according to claim 7, wherein the voltage is changed by the transformer to a second boosted voltage lower than the first boosted voltage.   The computer-readable recording medium which recorded the program for making a heat processing apparatus perform the temperature control method as described in any one of Claims 7-12.

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