JP2017085565A5 - - Google Patents

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Publication number
JP2017085565A5
JP2017085565A5 JP2016208295A JP2016208295A JP2017085565A5 JP 2017085565 A5 JP2017085565 A5 JP 2017085565A5 JP 2016208295 A JP2016208295 A JP 2016208295A JP 2016208295 A JP2016208295 A JP 2016208295A JP 2017085565 A5 JP2017085565 A5 JP 2017085565A5
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JP
Japan
Prior art keywords
transistor
electrically connected
drain
source
gate
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JP2016208295A
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English (en)
Japanese (ja)
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JP2017085565A (ja
JP6883972B2 (ja
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Publication of JP2017085565A5 publication Critical patent/JP2017085565A5/ja
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Publication of JP6883972B2 publication Critical patent/JP6883972B2/ja
Expired - Fee Related legal-status Critical Current
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JP2016208295A 2015-10-30 2016-10-25 半導体装置、電子部品および電子機器 Expired - Fee Related JP6883972B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015214977 2015-10-30
JP2015214977 2015-10-30

Publications (3)

Publication Number Publication Date
JP2017085565A JP2017085565A (ja) 2017-05-18
JP2017085565A5 true JP2017085565A5 (https=) 2019-11-28
JP6883972B2 JP6883972B2 (ja) 2021-06-09

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ID=58638311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016208295A Expired - Fee Related JP6883972B2 (ja) 2015-10-30 2016-10-25 半導体装置、電子部品および電子機器

Country Status (3)

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US (1) US10504919B2 (https=)
JP (1) JP6883972B2 (https=)
KR (1) KR102643895B1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8736315B2 (en) * 2011-09-30 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10115769B1 (en) * 2017-06-13 2018-10-30 Macronix International Co., Ltd. Resistive random access memory device and method for manufacturing the same
WO2020128713A1 (ja) * 2018-12-20 2020-06-25 株式会社半導体エネルギー研究所 単極性トランジスタを用いて構成された論理回路、および、半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011089808A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101889383B1 (ko) 2011-05-16 2018-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스
US9673823B2 (en) 2011-05-18 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9762246B2 (en) 2011-05-20 2017-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a storage circuit having an oxide semiconductor
JP5820336B2 (ja) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 半導体装置
JP5892852B2 (ja) * 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
JP6125850B2 (ja) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9654107B2 (en) 2012-04-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Programmable LSI
JP6228381B2 (ja) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 半導体装置
US8975918B2 (en) 2012-05-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Lookup table and programmable logic device including lookup table
WO2013164958A1 (en) 2012-05-02 2013-11-07 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
KR102059218B1 (ko) 2012-05-25 2019-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
KR102112364B1 (ko) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6368155B2 (ja) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
TWI633650B (zh) * 2013-06-21 2018-08-21 半導體能源研究所股份有限公司 半導體裝置
JP6352070B2 (ja) * 2013-07-05 2018-07-04 株式会社半導体エネルギー研究所 半導体装置
WO2015118436A1 (en) * 2014-02-07 2015-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, device, and electronic device

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