JP2017069519A5 - - Google Patents

Download PDF

Info

Publication number
JP2017069519A5
JP2017069519A5 JP2015196919A JP2015196919A JP2017069519A5 JP 2017069519 A5 JP2017069519 A5 JP 2017069519A5 JP 2015196919 A JP2015196919 A JP 2015196919A JP 2015196919 A JP2015196919 A JP 2015196919A JP 2017069519 A5 JP2017069519 A5 JP 2017069519A5
Authority
JP
Japan
Prior art keywords
light receiving
optical signal
unit
measurement object
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015196919A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017069519A (ja
JP6671911B2 (ja
Filing date
Publication date
Priority claimed from JP2015196919A external-priority patent/JP6671911B2/ja
Priority to JP2015196919A priority Critical patent/JP6671911B2/ja
Application filed filed Critical
Priority to TW105131144A priority patent/TWI616554B/zh
Priority to DE112016004462.3T priority patent/DE112016004462B4/de
Priority to PCT/JP2016/079067 priority patent/WO2017057696A1/ja
Publication of JP2017069519A publication Critical patent/JP2017069519A/ja
Priority to US15/940,032 priority patent/US20180223434A1/en
Publication of JP2017069519A5 publication Critical patent/JP2017069519A5/ja
Publication of JP6671911B2 publication Critical patent/JP6671911B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015196919A 2015-10-02 2015-10-02 位置ずれ検出装置、気相成長装置および位置ずれ検出方法 Active JP6671911B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015196919A JP6671911B2 (ja) 2015-10-02 2015-10-02 位置ずれ検出装置、気相成長装置および位置ずれ検出方法
TW105131144A TWI616554B (zh) 2015-10-02 2016-09-29 氣相成長裝置
DE112016004462.3T DE112016004462B4 (de) 2015-10-02 2016-09-30 Positionsabweichungsdetektionsvorrichtung, Gasepitaxievorrichtung und Positionsabweichungsdetektionsverfahren
PCT/JP2016/079067 WO2017057696A1 (ja) 2015-10-02 2016-09-30 位置ずれ検出装置、気相成長装置および位置ずれ検出方法
US15/940,032 US20180223434A1 (en) 2015-10-02 2018-03-29 Vapor growth apparatus, and vapor growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015196919A JP6671911B2 (ja) 2015-10-02 2015-10-02 位置ずれ検出装置、気相成長装置および位置ずれ検出方法

Publications (3)

Publication Number Publication Date
JP2017069519A JP2017069519A (ja) 2017-04-06
JP2017069519A5 true JP2017069519A5 (enExample) 2018-11-08
JP6671911B2 JP6671911B2 (ja) 2020-03-25

Family

ID=58427596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015196919A Active JP6671911B2 (ja) 2015-10-02 2015-10-02 位置ずれ検出装置、気相成長装置および位置ずれ検出方法

Country Status (5)

Country Link
US (1) US20180223434A1 (enExample)
JP (1) JP6671911B2 (enExample)
DE (1) DE112016004462B4 (enExample)
TW (1) TWI616554B (enExample)
WO (1) WO2017057696A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117038536A (zh) * 2018-08-16 2023-11-10 细美事有限公司 净化处理方法
KR102190920B1 (ko) * 2018-08-16 2020-12-16 세메스 주식회사 퍼지 처리 장치 및 퍼지 처리 방법
KR102303262B1 (ko) * 2019-01-15 2021-09-16 세메스 주식회사 퍼지 처리 장치 및 퍼지 처리 방법
JP7440480B2 (ja) * 2021-12-13 2024-02-28 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、およびプログラム
CN115125619B (zh) * 2022-07-12 2023-07-04 季华实验室 一种外延片的冷却系统、方法、电子设备及存储介质
JP7698682B2 (ja) * 2023-03-14 2025-06-25 ウォニク アイピーエス カンパニー リミテッド 基板処理装置及び基板処理方法
TWI853590B (zh) * 2023-05-30 2024-08-21 印能科技股份有限公司 壓差法結合排氣治具進行載板加工的設備及方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08114440A (ja) * 1994-10-14 1996-05-07 Hitachi Ltd 膜厚測定方法および薄膜形成方法ならびに薄膜形成装置
JP4439993B2 (ja) * 2004-05-07 2010-03-24 Ｎｅｃエレクトロニクス株式会社 半導体製造装置
JP2009094208A (ja) * 2007-10-05 2009-04-30 Sekisui Chem Co Ltd 表面処理用の膜厚測定設備
JP5558673B2 (ja) 2008-03-25 2014-07-23 大日本スクリーン製造株式会社 熱処理装置
US20130167771A1 (en) * 2011-03-09 2013-07-04 Taiyo Nippon Sanso Corporation Vapor phase growth apparatus
US8934091B2 (en) 2012-09-09 2015-01-13 Kla-Tencor Corp. Monitoring incident beam position in a wafer inspection system
JP6134191B2 (ja) 2013-04-07 2017-05-24 村川 惠美 回転型セミバッチａｌｄ装置
JP2016114440A (ja) * 2014-12-15 2016-06-23 株式会社日立製作所 制御棒挿入性耐震試験装置
JP6479525B2 (ja) * 2015-03-27 2019-03-06 株式会社ニューフレアテクノロジー 成膜装置及び温度測定方法

Similar Documents

Publication Publication Date Title
TWI616554B (zh) 氣相成長裝置
JP2015212827A5 (enExample)
JP2016119473A5 (enExample)
KR101553149B1 (ko) 두께 변화 측정 장치
JP2009224806A5 (enExample)
TW201621998A (zh) 蝕刻處理方法及斜角蝕刻裝置
TW201345855A (zh) 玻璃基底雷射切割裝置及其玻璃基底破裂檢測方法
KR20120100773A (ko) 기판 처리를 위한 ｕｖ 조사의 조작 방법과, ｕｖ 광에 의한 기판 처리 방법 및 기판 처리를 위한 ｕⅴ 유닛
JP2012129557A5 (ja) 露光方法及び露光装置、並びに液体供給方法
TW200625496A (en) Patterned wafer thickness detection system
MX2016013608A (es) Modo de transmision/reflexion optica en el control de la velocidad de deposicion in-situ para la fabricacion de elemento informatico integrado (ice).
US20160282886A1 (en) Upper dome temperature closed loop control
JP6289930B2 (ja) ウェットエッチング装置
JP2015023104A5 (enExample)
JP2017156625A5 (enExample)
WO2009052876A9 (de) Verfahren zur prozessüberwachung beim laser-beaufschlagen zweier fügepartner
JP2014099336A5 (enExample)
TW201634715A (zh) 成膜裝置及成膜方法
KR102102519B1 (ko) 노광 장치, 기판 처리 장치, 기판의 노광 방법 및 기판 처리 방법
TWI395631B (zh) Laser processing equipment that can control the length and intensity of laser beam
TW200725694A (en) Substrate heating device and substrate heating method
JP2018526608A5 (enExample)
US20190060999A1 (en) Apparatus for additively manufacturing of three-dimensional objects
JP2016222974A (ja) 真空蒸着装置
JP4392838B2 (ja) 成膜装置及び成膜方法