JP2017069374A - 裏面入射型固体撮像素子 - Google Patents
裏面入射型固体撮像素子 Download PDFInfo
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- JP2017069374A JP2017069374A JP2015192975A JP2015192975A JP2017069374A JP 2017069374 A JP2017069374 A JP 2017069374A JP 2015192975 A JP2015192975 A JP 2015192975A JP 2015192975 A JP2015192975 A JP 2015192975A JP 2017069374 A JP2017069374 A JP 2017069374A
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- state imaging
- imaging device
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- 239000007787 solid Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052796 boron Inorganic materials 0.000 claims abstract description 54
- 238000003384 imaging method Methods 0.000 claims abstract description 48
- 238000007747 plating Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 144
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000009825 accumulation Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
Abstract
Description
[第1実施形態]
[第2実施形態]
Claims (5)
- 表面、及び凹部が設けられた裏面を有し、前記凹部の底部分である薄化部分を撮像領域とする半導体基板と、
前記半導体基板の前記表面に形成された信号読出回路と、
少なくとも前記半導体基板の前記裏面及び前記凹部の側面に形成されたボロン層と、
前記ボロン層上に形成され、前記凹部の底面に対向する開口が設けられた金属層と、
前記凹部の前記底面に形成された反射防止層と、を備える、裏面入射型固体撮像素子。 - 前記凹部は、前記半導体基板の前記表面側とは反対側に向かって広がる錐台状の形状を有する、請求項1記載の裏面入射型固体撮像素子。
- 前記ボロン層は、前記凹部の前記底面に更に形成されており、
前記反射防止層は、前記ボロン層を介して前記凹部の前記底面に形成されている、請求項1又は2記載の裏面入射型固体撮像素子。 - 前記半導体基板のうち少なくとも前記凹部を包囲する領域は、P型の半導体材料からなる、請求項1〜3のいずれか一項記載の裏面入射型固体撮像素子。
- 前記金属層は、めっき層である、請求項1〜4のいずれか一項記載の裏面入射型固体撮像素子。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015192975A JP6803137B2 (ja) | 2015-09-30 | 2015-09-30 | 裏面入射型固体撮像素子 |
KR1020177035082A KR102626766B1 (ko) | 2015-09-30 | 2016-07-11 | 이면 입사형 고체 촬상 소자 |
US15/764,492 US10283551B2 (en) | 2015-09-30 | 2016-07-11 | Back-illuminated solid-state imaging element |
PCT/JP2016/070425 WO2017056629A1 (ja) | 2015-09-30 | 2016-07-11 | 裏面入射型固体撮像素子 |
EP16850806.7A EP3358619B1 (en) | 2015-09-30 | 2016-07-11 | Back-illuminated solid-state imaging element |
CN201680059110.2A CN108140659B (zh) | 2015-09-30 | 2016-07-11 | 背面入射型固体摄像元件 |
TW105122090A TWI702718B (zh) | 2015-09-30 | 2016-07-13 | 背面射入型固體攝像裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015192975A JP6803137B2 (ja) | 2015-09-30 | 2015-09-30 | 裏面入射型固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017069374A true JP2017069374A (ja) | 2017-04-06 |
JP6803137B2 JP6803137B2 (ja) | 2020-12-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015192975A Active JP6803137B2 (ja) | 2015-09-30 | 2015-09-30 | 裏面入射型固体撮像素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10283551B2 (ja) |
EP (1) | EP3358619B1 (ja) |
JP (1) | JP6803137B2 (ja) |
KR (1) | KR102626766B1 (ja) |
CN (1) | CN108140659B (ja) |
TW (1) | TWI702718B (ja) |
WO (1) | WO2017056629A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018181911A (ja) | 2017-04-04 | 2018-11-15 | 浜松ホトニクス株式会社 | 光半導体装置 |
US11114491B2 (en) * | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
US11321655B2 (en) * | 2019-11-26 | 2022-05-03 | Ncr Corporation | Frictionless and autonomous control processing |
JP2021044439A (ja) | 2019-09-12 | 2021-03-18 | 浜松ホトニクス株式会社 | 裏面入射型撮像素子 |
US20210164917A1 (en) * | 2019-12-03 | 2021-06-03 | Kla Corporation | Low-reflectivity back-illuminated image sensor |
US11848350B2 (en) * | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
US20220254829A1 (en) * | 2021-02-05 | 2022-08-11 | Kla Corporation | Back-illuminated sensor with boron layer deposited using plasma atomic layer deposition |
CN113744641B (zh) * | 2021-08-19 | 2023-04-18 | 惠州华星光电显示有限公司 | 一种显示装置 |
Citations (14)
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JPH0645574A (ja) * | 1992-07-22 | 1994-02-18 | Hamamatsu Photonics Kk | 半導体エネルギー検出器 |
JPH07245386A (ja) * | 1994-03-02 | 1995-09-19 | Hamamatsu Photonics Kk | 半導体デバイスの製造方法 |
JPH10223873A (ja) * | 1997-02-10 | 1998-08-21 | Hamamatsu Photonics Kk | 半導体装置 |
JP2000133802A (ja) * | 1998-10-28 | 2000-05-12 | Nec Corp | 半導体装置とその製造方法 |
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JP2004031452A (ja) * | 2002-06-21 | 2004-01-29 | Mitsubishi Electric Corp | 裏面入射型固体撮像素子 |
JP2004319791A (ja) * | 2003-04-16 | 2004-11-11 | Hamamatsu Photonics Kk | 裏面照射型光検出装置の製造方法 |
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JPH11330448A (ja) * | 1998-05-20 | 1999-11-30 | Nec Corp | 固体撮像装置及びその製造方法 |
-
2015
- 2015-09-30 JP JP2015192975A patent/JP6803137B2/ja active Active
-
2016
- 2016-07-11 US US15/764,492 patent/US10283551B2/en active Active
- 2016-07-11 EP EP16850806.7A patent/EP3358619B1/en active Active
- 2016-07-11 CN CN201680059110.2A patent/CN108140659B/zh active Active
- 2016-07-11 KR KR1020177035082A patent/KR102626766B1/ko active IP Right Grant
- 2016-07-11 WO PCT/JP2016/070425 patent/WO2017056629A1/ja active Application Filing
- 2016-07-13 TW TW105122090A patent/TWI702718B/zh active
Patent Citations (14)
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JPH0645574A (ja) * | 1992-07-22 | 1994-02-18 | Hamamatsu Photonics Kk | 半導体エネルギー検出器 |
JPH07245386A (ja) * | 1994-03-02 | 1995-09-19 | Hamamatsu Photonics Kk | 半導体デバイスの製造方法 |
JPH10223873A (ja) * | 1997-02-10 | 1998-08-21 | Hamamatsu Photonics Kk | 半導体装置 |
JP2000133802A (ja) * | 1998-10-28 | 2000-05-12 | Nec Corp | 半導体装置とその製造方法 |
JP2000138365A (ja) * | 1998-11-02 | 2000-05-16 | Hamamatsu Photonics Kk | 半導体エネルギー検出器 |
JP2000196063A (ja) * | 1998-12-28 | 2000-07-14 | Hamamatsu Photonics Kk | 半導体エネルギ―検出器 |
JP2002231913A (ja) * | 2001-01-30 | 2002-08-16 | Hamamatsu Photonics Kk | 半導体装置 |
JP2004031452A (ja) * | 2002-06-21 | 2004-01-29 | Mitsubishi Electric Corp | 裏面入射型固体撮像素子 |
JP2004319791A (ja) * | 2003-04-16 | 2004-11-11 | Hamamatsu Photonics Kk | 裏面照射型光検出装置の製造方法 |
JP2005045073A (ja) * | 2003-07-23 | 2005-02-17 | Hamamatsu Photonics Kk | 裏面入射型光検出素子 |
JP2009117454A (ja) * | 2007-11-02 | 2009-05-28 | Mitsubishi Electric Corp | 裏面入射型リニアイメージセンサ、その駆動方法、及びその製造方法 |
US20130264481A1 (en) * | 2012-04-10 | 2013-10-10 | Kla-Tencor Corporation | Back-Illuminated Sensor With Boron Layer |
US20140291493A1 (en) * | 2013-04-01 | 2014-10-02 | Kla-Tencor Corporation | Photomultiplier Tube, Image Sensor, And an Inspection System Using A PMT Or Image Sensor |
US20150200216A1 (en) * | 2014-01-10 | 2015-07-16 | Kla-Tencor Corporation | Anti-Reflection Layer For Back-Illuminated Sensor |
Also Published As
Publication number | Publication date |
---|---|
US10283551B2 (en) | 2019-05-07 |
TW201712858A (zh) | 2017-04-01 |
EP3358619A4 (en) | 2019-06-19 |
CN108140659B (zh) | 2022-05-17 |
US20180286901A1 (en) | 2018-10-04 |
JP6803137B2 (ja) | 2020-12-23 |
TWI702718B (zh) | 2020-08-21 |
EP3358619A1 (en) | 2018-08-08 |
WO2017056629A1 (ja) | 2017-04-06 |
CN108140659A (zh) | 2018-06-08 |
EP3358619B1 (en) | 2020-08-19 |
KR102626766B1 (ko) | 2024-01-19 |
KR20180062982A (ko) | 2018-06-11 |
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