JP2017059669A - Through hole formation substrate, through electrode substrate, and substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly reliable through hole formation substrate.SOLUTION: A through hole formation substrate is a substrate provided with a first through hole and a second through hole, the first through hole has a first region, where the hole diameter is smaller than other hole diameter of the first through hole, closer to a first surface than a substrate intermediate position, i.e., the intermediate of the first surface of the substrate and a second surface on the opposite side thereto, and the second through hole has a second region, where the hole diameter is smaller than other hole diameter of the second through hole, closer to the second surface than the substrate intermediate position. The first region is provided at an opening end of the first surface, and the second region is provided at an opening end of the second surface. The hole diameter of the first through hole becomes smaller gradually from the second surface toward the first surface, and the hole diameter of the second through hole may become smaller gradually from the first surface toward the second surface.SELECTED DRAWING: Figure 1B

Description

  The present invention relates to a through hole forming substrate, a through electrode substrate, and a substrate. One disclosed embodiment relates to the shape of a through hole formed in a substrate or the shape of a structure disposed in the through hole.

  In recent years, integrated circuits have become more miniaturized and complicated with higher performance of integrated circuits. In such an integrated circuit, a connection terminal for inputting a power supply and a logic signal necessary for circuit operation from an external device (chip) is arranged. However, the connection terminals on the integrated circuit are arranged at a very narrow pitch due to the miniaturization and complexity of the integrated circuit, which is several to several tens of times smaller than the pitch of the connection terminals of the chip.

  As described above, an interposer serving as an intermediary substrate for converting the pitch size of connection terminals is used when an integrated circuit and a chip having different connection terminal pitches are connected. In the interposer, an integrated circuit is mounted on the wiring arranged on one surface of the substrate, a chip is mounted on the wiring arranged on the other surface, and the wiring arranged on both sides of the substrate is connected to the substrate. They are connected by penetrating through electrodes.

  As interposers, TSV (Through-Silicon Via), which is a through electrode substrate using a silicon substrate, and TGV (Through-Glass Via), which is a through electrode substrate using a glass substrate, have been developed (for example, patents). Reference 1). In particular, in the case of TGV, for example, it can be manufactured using a large glass substrate having a vertical and horizontal size of 730 mm × 920 mm called the 4.5th generation, which is advantageous in that the manufacturing cost can be reduced. is there. Moreover, in the case of TGV, it is advantageous at the point which can expand | deploy to the components using the transparency which is the characteristic of a glass substrate.

JP 2013-110347 A

  In the above interposer, the embedding property of the through electrode filled in the through hole or the contact property of the thin film used for the through electrode is one of the important factors. If the penetrating property of the through electrode or the throwing power of the through electrode is deteriorated, it becomes impossible to ensure electrical connection between the wirings arranged on both surfaces of the substrate. Or even if it is a case where the electrical connection of the said wiring is barely ensured, a penetration electrode will be able to be formed only in the one part area | region of a through-hole. In such a case, current concentrates on the through electrode formed in a partial region of the through hole, which causes problems such as destruction of the through electrode due to excessive self-heating. Further, when the density of through holes formed in the substrate is increased, there is a problem that the rigidity of the substrate is impaired. In either case, it becomes one of the factors that reduce the reliability of the substrate constituting the interposer.

  The present invention has been made in view of such a problem, and an object thereof is to provide a highly reliable substrate.

  A through hole forming substrate according to an embodiment of the present invention is a substrate provided with a first through hole and a second through hole, and the first through hole is opposite to the first surface and the first surface of the substrate. The first region has a first area smaller than the other hole diameters of the first through holes on the first surface side than the substrate intermediate position, which is an intermediate position between the second surface and the second through hole. On the second surface side, a second region having a hole diameter smaller than the other hole diameters of the second through holes is provided.

  According to said through-hole formation board | substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be relieve | moderated.

  The first region is provided at the open end of the first surface, the second region is provided at the open end of the second surface, and the hole diameter of the first through hole is from the second surface toward the first surface. The hole diameter of the second through hole may be gradually decreased from the first surface toward the second surface.

  According to the above through hole forming substrate, the difference in the coefficient of thermal expansion between the front and back surfaces of the substrate due to the processed shape of the substrate can be alleviated, and the embedding property or throwing power of the through electrode can be improved. .

  The first through hole has a first opening end having a hole diameter larger than that of the first region on the first surface side, and a second opening having a hole diameter larger than those of the first region and the first opening end on the second surface side. The second through hole has a third opening end having a larger hole diameter than the second region on the second surface side, and has a hole diameter larger than the second region and the third opening end on the first surface side. You may have a 4th opening end.

  According to the above through hole forming substrate, the difference in thermal expansion coefficient between the front and back surfaces of the substrate due to the processed shape of the substrate can be alleviated, and the through electrode is improved while improving the embedding property or throwing power of the through electrode. Can suppress desorption from the through hole.

  Further, the first through hole and the second through hole may be symmetric with respect to the substrate intermediate position.

  According to said through-hole formation board | substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be offset.

  A through hole forming substrate according to an embodiment of the present invention is a substrate provided with a first through hole and a second through hole, and the first through hole is opposite to the first surface and the first surface of the substrate. The third surface has a third region whose hole diameter is larger than the other hole diameters of the first through holes on the first surface side relative to the substrate intermediate position, which is intermediate to the second surface, and the second through holes are located closer to the substrate intermediate position. On the second surface side, the hole diameter has a fourth region larger than the other hole diameters of the second through holes.

  According to said through-hole formation board | substrate, the difference of the thermal expansion coefficient in the front and back of the board | substrate resulting from the process shape of a board | substrate can be relieve | moderated, and the detachment | desorption from a through-hole can be suppressed. .

  The third region may be provided at the opening end of the first surface, and the fourth region may be provided at the opening end of the second surface.

  According to the above through hole forming substrate, the difference in the coefficient of thermal expansion between the front and back surfaces of the substrate due to the processed shape of the substrate can be alleviated, and the pad is formed on the front and back surfaces of the through electrode forming substrate simultaneously with the formation of the through electrode. Can be formed.

  The first through hole has a first opening end having a smaller hole diameter than the third region on the first surface side, and a second opening having a smaller hole diameter than the third region and the first opening end on the second surface side. The second through hole has a third opening end having a smaller hole diameter than the fourth region on the second surface side, and has a smaller hole diameter than the fourth region and the third opening end on the first surface side. You may have a 4th opening end.

  According to the above through hole forming substrate, the difference in thermal expansion coefficient between the front and back surfaces of the substrate due to the processed shape of the substrate can be alleviated, and the through electrode is improved while improving the embedding property or throwing power of the through electrode. Can suppress desorption from the through hole.

  Further, the first through hole and the second through hole may be symmetric with respect to the substrate intermediate position.

  According to said through-hole formation board | substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be offset.

  A through hole forming substrate according to an embodiment of the present invention is a substrate provided with a first through hole and a second through hole, and the first through hole is in a direction perpendicular to the first surface of the substrate. The second through hole has a second inclined portion that is inclined with respect to a direction orthogonal to the first surface, and either the first inclined portion or the second inclined portion is provided. Inclined in a direction away from the center of the substrate from the first surface toward the second surface.

  According to said through-hole formation board | substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be relieve | moderated.

  In addition, the first through hole has a first region whose hole diameter is smaller than the other hole diameters of the first through hole on the first surface side from the substrate intermediate position that is intermediate between the first surface and the second surface, The second through hole may have a second region whose hole diameter is smaller than the other hole diameters of the second through hole on the second surface side of the substrate intermediate position.

  According to said through-hole formation board | substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be relieve | moderated.

  The first region is provided at the open end of the first surface, the second region is provided at the open end of the second surface, and the hole diameter of the first through hole is from the second surface toward the first surface. The hole diameter of the second through hole may be gradually decreased from the first surface toward the second surface.

  According to the above through hole forming substrate, the difference in the coefficient of thermal expansion between the front and back surfaces of the substrate due to the processed shape of the substrate can be alleviated, and the embedding property or throwing power of the through electrode can be improved. .

  The first through hole has a first opening end having a hole diameter larger than that of the first region on the first surface side, and a second opening having a hole diameter larger than those of the first region and the first opening end on the second surface side. The second through hole has a third opening end having a larger hole diameter than the second region on the second surface side, and has a hole diameter larger than the second region and the third opening end on the first surface side. You may have a 4th opening end.

  According to the above through hole forming substrate, the difference in thermal expansion coefficient between the front and back surfaces of the substrate due to the processed shape of the substrate can be alleviated, and the through electrode is improved while improving the embedding property or throwing power of the through electrode. Can suppress desorption from the through hole.

  Further, the first through hole and the second through hole may be symmetric with respect to the substrate intermediate position.

  According to said through-hole formation board | substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be offset.

  In addition, the first through hole has a third region in which the hole diameter is larger than the other hole diameters of the first through hole on the first surface side than the substrate intermediate position that is intermediate between the first surface and the second surface. The second through hole may have a fourth region whose hole diameter is larger than the other hole diameters of the second through hole on the second surface side of the substrate intermediate position.

  According to said through-hole formation board | substrate, the difference of the thermal expansion coefficient in the front and back of the board | substrate resulting from the process shape of a board | substrate can be relieve | moderated, and the detachment | desorption from a through-hole can be suppressed. .

  The third region may be provided at the opening end of the first surface, and the fourth region may be provided at the opening end of the second surface.

  According to the above through hole forming substrate, the difference in the coefficient of thermal expansion between the front and back surfaces of the substrate due to the processed shape of the substrate can be alleviated, and the pad is formed on the front and back surfaces of the through electrode forming substrate simultaneously with the formation of the through electrode. Can be formed.

  The first through hole has a first opening end having a smaller hole diameter than the third region on the first surface side, and a second opening having a smaller hole diameter than the third region and the first opening end on the second surface side. The second through hole has a third opening end having a smaller hole diameter than the fourth region on the second surface side, and has a smaller hole diameter than the fourth region and the third opening end on the first surface side. You may have a 4th opening end.

  According to the above through hole forming substrate, the difference in thermal expansion coefficient between the front and back surfaces of the substrate due to the processed shape of the substrate can be alleviated, and the through electrode is improved while improving the embedding property or throwing power of the through electrode. Can suppress desorption from the through hole.

  Further, the first through hole and the second through hole may be symmetric with respect to the substrate intermediate position.

  According to said through-hole formation board | substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be offset.

  A through electrode substrate according to an embodiment of the present invention includes a substrate provided with a first through hole and a second through hole, a first electrode disposed in a first surface of the substrate, disposed in the first through hole. A first through electrode that connects the wiring and a second wiring disposed on the second surface opposite to the first surface; a third wiring disposed within the second through hole and disposed on the first surface; A second through electrode that connects the fourth wiring disposed on the second surface, and the first through electrode and the second through electrode have different shapes.

  According to said penetration electrode substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be relieve | moderated.

  The first through electrode includes a first conductive portion filled with a conductive material in a hole diameter direction of the first through hole, and a second conductive material in which the conductive material is disposed so as to have a cavity inside the first through hole. The second through electrode has a third conductive portion filled with a conductive material in a hole diameter direction of the second through hole, and a conductive material disposed so as to have a cavity inside the second through hole. The first conductive portion may be disposed on the first surface side, and the second conductive portion may be disposed on the second surface side.

  According to said penetration electrode substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be relieve | moderated.

  A substrate according to an embodiment of the present invention includes a substrate provided with a first through hole and a second through hole, a first structure disposed within the first through hole, and a second through hole. The second structure body is disposed, and the first structure body and the second structure body have different shapes.

  According to said board | substrate, the difference of the thermal expansion coefficient in the front and back of a board | substrate resulting from the process shape of a board | substrate can be relieve | moderated.

  According to the present invention, a highly reliable substrate can be provided.

It is a top view which shows the outline | summary of the through-hole formation board | substrate which concerns on one Embodiment of this invention. It is A-A 'sectional drawing of the through-hole formation board | substrate which concerns on one Embodiment of this invention. It is sectional drawing which shows the process of irradiating a laser beam inside a board | substrate in the manufacturing method of the through-hole formation board | substrate which concerns on one Embodiment of this invention. It is sectional drawing which shows the process of forming an alteration region inside a board | substrate in the manufacturing method of the through-hole formation board | substrate which concerns on one Embodiment of this invention. It is sectional drawing which shows the process of etching the alteration region of a board | substrate using a chemical | medical solution in the manufacturing method of the through-hole formation board | substrate which concerns on one Embodiment of this invention. It is sectional drawing of the through-electrode board | substrate using the through-hole formation board | substrate which concerns on one Embodiment of this invention. It is sectional drawing of the through-hole formation board | substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the through-hole formation board | substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the through-hole formation board | substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the through-hole formation board | substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the through-hole formation board | substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the through-hole formation board | substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the through-hole formation board | substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the through-hole formation board | substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the through-hole formation board | substrate which concerns on the modification of one Embodiment of this invention. It is a top view showing an outline of a penetration electrode substrate concerning one embodiment of the present invention. It is a B-B 'sectional view of the penetration electrode substrate concerning one embodiment of the present invention. It is sectional drawing which shows the process of forming a seed layer in the manufacturing method of the penetration electrode substrate concerning one embodiment of the present invention. In the manufacturing method of the penetration electrode substrate concerning one embodiment of the present invention, it is a sectional view showing the process of forming a plating layer and plugging up one end of a penetration hole. In the manufacturing method of the penetration electrode substrate concerning one embodiment of the present invention, it is a sectional view showing the process of forming a plating layer and filling up the plating layer in a partial region of a through hole. It is sectional drawing which shows the process of forming a conductive layer in the area | region where the plating layer of a through-hole is not filled in the manufacturing method of the through-electrode board | substrate which concerns on one Embodiment of this invention. It is sectional drawing of the penetration electrode substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the penetration electrode substrate which concerns on the modification of one Embodiment of this invention. In the manufacturing method of the penetration electrode substrate concerning the modification of one embodiment of the present invention, it is sectional drawing which shows the process of plugging up the end of the 1st surface of a penetration hole, and forming the penetration electrode from the 2nd surface side of a penetration hole. is there. In the manufacturing method of the penetration electrode substrate concerning the modification of one embodiment of the present invention, it is sectional drawing which shows the process of plugging up the end of the 2nd surface of a penetration hole, and forming the penetration electrode from the 1st surface side of a penetration hole. is there. It is sectional drawing which shows the process of forming the wiring connected to a penetration electrode in the manufacturing method of the penetration electrode substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the penetration electrode substrate which concerns on the modification of one Embodiment of this invention. It is sectional drawing of the board | substrate which concerns on one Embodiment of this invention. It is sectional drawing of the board | substrate which concerns on one Embodiment of this invention.

  Hereinafter, a through hole forming substrate, a through electrode substrate, and a substrate according to the present invention will be described with reference to the drawings. However, the through-hole forming substrate, the through-electrode substrate, and the substrate of the present invention can be implemented in many different modes, and are not construed as being limited to the description of the embodiments described below. Note that in the drawings referred to in this embodiment, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted. In addition, for convenience of explanation, the description will be made using the terms “upper” or “lower”, but the vertical direction may be reversed.

  In the following embodiments, a structure of a through hole forming substrate in which a through hole penetrating the front and back surfaces of the substrate, such as a glass interposer, and a through electrode substrate in which a through electrode is formed in the through hole will be described. Here, when the density of the through holes formed in the substrate increases, the rigidity of the substrate decreases and the substrate is likely to warp. For example, when forming a plurality of glass interposers on a mother glass substrate, if the mother glass in the manufacturing process is warped more than a specified value due to its own weight or the influence of the heat treatment process, the front and back surfaces of the mother glass substrate are stages of the manufacturing apparatus, etc. May cause scratches and dirt. Also, in each glass interposer, if the substrate is warped, the assembly accuracy is deteriorated, and the performance and reliability as the glass interposer are lowered.

  Furthermore, as a result of the inventors' diligent research, in the case of an interposer for an optical sensor, the characteristics required for the interposer include the role of the optical sensor as a mounting board and the wiring arranged on the front and back of the board. It plays a role as a through electrode for transmitting and receiving signals. When the substrate is warped due to the formation of the through electrode on the interposer, even if the amount of warpage of the substrate is small, the optical axis is not displaced due to the warpage of the substrate when the optical sensor is attached to the substrate. It turns out that the problem that occurs occurs. Therefore, even a small amount of warp that has not been a problem in the prior art deteriorates the performance of the product when the product is assembled.

<Embodiment 1>
A configuration of the through hole forming substrate 10 according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2.

[Configuration of the through-hole forming substrate 10]
The configuration of the through hole forming substrate 10 will be described with reference to FIG. 1 (FIGS. 1A and 1B). FIG. 1A is a plan view showing an outline of a through hole forming substrate according to an embodiment of the present invention. FIG. 1B is a cross-sectional view taken along the line AA ′ of the through hole forming substrate according to the embodiment of the present invention. As shown in FIG. 1A, in the through hole forming substrate 10 according to Embodiment 1 of the present invention, the substrate 100 is provided with a first through hole 110 and a second through hole 120. The first through hole 110 and the second through hole 120 have shapes having different hole diameters in the thickness direction of the substrate 100 as shown in FIG. 1B.

  The substrate 100 has an upper surface 102 and a lower surface 104. Further, the substrate 100 is provided with a first through hole 110 and a second through hole 120 that penetrate the upper surface 102 and the lower surface 104. As shown in FIG. 1B, the first through hole 110 has a tapered shape in which the hole diameter decreases from the upper opening end 112 of the upper surface 102 toward the lower opening end 114 of the lower surface 104. On the other hand, the second through hole 120 has a tapered shape in which the hole diameter decreases from the lower opening end 124 of the lower surface 104 toward the upper opening end 122 of the upper surface 102, contrary to the first through hole 110.

  In other words, the first through hole 110 has a first region 116 having a smaller hole diameter on the lower surface 104 side than the substrate intermediate position 106 that is intermediate between the upper surface 102 and the lower surface 104. Here, as shown in FIG. 1B, the first region 116 is provided at the lower opening end 114 of the lower surface 104. The first region 116 corresponds to the smallest hole diameter (inner diameter) in the first through hole 110. The second through-hole 120 has a second region 126 having a smaller hole diameter on the upper surface 102 side than the substrate intermediate position 106. Here, the second region 126 is provided at the upper opening end 122 of the upper surface 102. The second region 126 corresponds to the smallest hole diameter (inner diameter) in the second through hole 120. The diameter of the first through hole 110 gradually decreases from the upper surface 102 toward the lower surface 104. The hole diameter of the second through hole 120 gradually decreases from the lower surface 104 toward the upper surface 102.

  In other words, it can be said that the first through hole 110 and the second through hole 120 have a vertically symmetrical shape. It can also be said that the first through-hole 110 and the second through-hole 120 are symmetrical with respect to the substrate intermediate position 106. It can also be said that the first through-hole 110 and the second through-hole 120 have a point-symmetric shape with respect to their centers. Although FIG. 1B illustrates the structure in which the first through hole 110 and the second through hole 120 are in a symmetrical relationship, these may not be symmetrical.

As the substrate 100, a glass substrate can be used. In addition to a glass substrate, an insulating substrate such as a quartz substrate, a sapphire substrate, or a resin substrate, a semiconductor substrate such as a silicon substrate, a silicon carbide substrate, or a compound semiconductor substrate, or a conductive substrate such as a stainless steel substrate can be used. . Further, as a material used for the substrate, a material having a thermal expansion coefficient in the range of 2 × 10 ⁻⁶ [/ K] to 17 × 10 ⁻⁶ [/ K] can be used. Moreover, these may be laminated. Although there is no restriction | limiting in particular in the thickness of the board | substrate 100, For example, the board | substrate of thickness of 100 micrometers or more and 800 micrometers or less can be used. The thickness of the substrate 100 is more preferably 200 μm or more and 400 μm or less. When the substrate becomes thinner than the lower limit of the thickness of the substrate, the deflection of the substrate increases. As a result, handling in the manufacturing process becomes difficult, and the substrate is warped by an internal stress such as a thin film formed on the substrate. Further, when the substrate becomes thicker than the upper limit of the thickness of the substrate, the process of forming the through hole becomes longer. As a result, the manufacturing process becomes longer and the manufacturing cost also increases.

  As described above, according to the through hole forming substrate 10 according to Embodiment 1 of the present invention, the adjacent first through hole 110 and second through hole 120 have different shapes, thereby processing the glass substrate. The difference in coefficient of thermal expansion between the front and back due to the shape can be alleviated. Specifically, for example, when all the through holes formed in the through hole forming substrate have the same shape as the first through hole 110, the amount of the substrate material on the upper surface 102 side of the through hole forming substrate is larger than that on the lower surface 104 side. There will be less state. When heat is applied to the through-hole-formed substrate in this state, the substrate material expands, so that the lower surface 104 side with a large amount of substrate material expands greatly compared to the upper surface 102 side with a small amount of substrate material. As a result, the through hole forming substrate warps in a convex shape toward the lower surface 104 side. However, according to the through hole forming substrate 10, it is possible to suppress the warpage of the substrate due to the difference in thermal expansion between the front and back surfaces as described above. As a result, a highly reliable substrate can be provided.

[Manufacturing method of through-hole forming substrate 10]
A method for manufacturing the through hole forming substrate 10 according to Embodiment 1 of the present invention will be described with reference to FIG. 2 (FIGS. 2A to 2C). In FIG. 2, the same elements as those shown in FIG. Here, the manufacturing method of the glass interposer which uses a glass substrate as a through-hole formation board | substrate is demonstrated.

  FIG. 2A is a cross-sectional view showing a step of irradiating a laser beam inside the substrate in the method for manufacturing a through hole forming substrate according to an embodiment of the present invention. FIG. 2A describes a method of etching by changing the material of the substrate in a region where a through hole is to be formed by irradiating the substrate 100 with a femtosecond laser. Here, the laser beam 601 emitted from the light source 600 is incident from the upper surface 102 side of the substrate 100 and is focused on a region where a through hole inside the substrate 100 is to be formed. At the position where the laser beam 601 is focused, high energy is supplied to the substrate 100, and the material of the substrate is altered. For example, when it is desired to form a shape in which the hole diameter gradually decreases from the upper opening end 112 of the upper surface 102 toward the lower opening end 114 of the lower surface 104 as in the first through hole 110, the focal spot size of the laser beam 601 is changed. However, the light source 600 may be scanned in the thickness direction of the substrate.

  Further, the through hole shape can be obtained by one laser irradiation without changing the focal spot size of the laser beam. Specifically, the first altered region 130 shown in FIG. 2B can be formed by irradiating the laser beam with the laser beam focused on the lower surface 104 side of the substrate 100. More specifically, by focusing the laser beam on the lower surface 104 side of the substrate 100, the irradiation region at the focal position on the lower surface 104 side is narrow (that is, the altered portion of the glass is narrow), and from the focal position on the lower surface 104 side, The irradiation region becomes wider toward the upper surface 102 side (that is, the altered portion of the glass becomes wider).

  FIG. 2B is a cross-sectional view illustrating a process of forming a modified region inside the substrate in the method for manufacturing a through hole forming substrate according to an embodiment of the present invention. As shown in FIG. 2B, the laser irradiation causes the substrate 100 to have a first altered region 130 in which the hole diameter decreases from the upper surface 102 to the lower surface 104, and a second alteration in which the hole diameter decreases from the lower surface 104 to the upper surface 102. Region 140 is formed. The first altered region 130 and the second altered region 140 can be appropriately changed in shape according to the desired shape of the through hole. Here, since the regions of the first altered region 130 and the second altered region 140 become the first through hole 110 and the second through hole 120, respectively, the altered region is adjusted according to the shape of the desired through hole. That's fine. Here, when laser irradiation is performed with the focus of the laser light on the lower surface 104 side as described above, even in the region where the laser light is not focused, that is, the region on the upper surface 102 side where the irradiation region is widened, The substrate 100 absorbs the laser light to form an altered region.

  FIG. 2C is a cross-sectional view showing a step of etching the altered region of the substrate using a chemical solution in the method for manufacturing the through hole forming substrate according to the embodiment of the present invention. The first altered region 130 and the second altered region 140 have a higher etching rate due to the chemical compared to the unmodified region. That is, by immersing the entire substrate 100 in the chemical solution 611, the first altered region 130 and the second altered region 140 are etched at a higher rate than a selectively or unaltered region. FIG. 2C shows a method of performing etching from both the upper surface 102 side and the lower surface 104 side by immersing the substrate 100 in a chemical solution 611 placed in a container 610. Here, when the substrate 100 is a glass substrate, hydrofluoric acid (HF), buffered hydrofluoric acid (BHF), surfactant-added buffered hydrofluoric acid (LAL), or the like is used as the chemical solution 611 used for etching. Can do. The chemical solution used for etching can be appropriately selected depending on the material of the substrate. Further, the etching method may be a spin coat etching method in addition to the immersion method. When performing spin coat etching, the treatment is performed on each side.

  As described above, by etching all of the first altered region 130 and the second altered region 140, the through hole forming substrate 10 having the first through hole 110 and the second through hole 120 shown in FIG. 1B is obtained. be able to. Here, there is no restriction | limiting in particular in the shape in planar view of the 1st through-hole 110 and the 2nd through-hole 120, For example, a circle may be sufficient and a rectangle and a polygon may be sufficient besides that. Of course, it may be a rectangle or a polygon with rounded corners.

Here, in FIG. 2, the method of forming a through hole by irradiating a laser beam to a region where a through hole is to be formed in the substrate 100 to form an altered region and performing wet etching with a chemical solution has been described. It is not limited. For example, the through hole may be formed by irradiating the substrate 100 with a high-power laser and melting the substrate. For example, a CO ₂ laser or the like can be used as a laser for processing a glass substrate. As described above, the through hole forming substrate 10 according to Embodiment 1 of the present invention can be manufactured.

  The first through hole 110 and the second through hole 120 formed in the through hole forming substrate 10 shown in FIGS. 1 and 2 may be formed simply for the purpose of suppressing warpage, and the upper surface 102 of the substrate 100 may be formed. In addition, a through electrode for connecting each wiring formed on the lower surface 104 may be formed. FIG. 3 is a cross-sectional view of a through electrode substrate using a through hole forming substrate according to an embodiment of the present invention. As shown in FIG. 3, in the through electrode substrate 19, the first through electrode 210 and the second through electrode 220 are disposed inside the first through hole 110 and the second through hole 120 in FIG. 1. The first through electrode 210 is connected to the first wiring 212 on the upper surface 102 and connected to the second wiring 214 on the lower surface 104. The second through electrode 220 is connected to the third wiring 222 on the upper surface 102 and connected to the fourth wiring 224 on the lower surface 104.

  When the first through hole 110 and the second through hole 120 having different hole diameters in the plate thickness direction of the substrate 100 are filled with the first through electrode 210 and the second through electrode 220, respectively, When the second through electrode 220 expands, the force that the expanded through electrode pushes the substrate in the surface direction of the substrate (direction parallel to the upper surface 102 and the lower surface 104) differs between the region having a large hole diameter and the region having a small hole diameter. However, according to the through electrode shown in FIG. 3, the second through electrode 220 has a shape in which the first through electrode 210 is inverted in the vertical direction. Although strongly pressed in the surface direction, the second through electrode 220 presses the substrate weakly. On the other hand, contrary to the above, near the lower surface 104, the first through electrode 210 presses the substrate 100 weakly in the surface direction, but the second through electrode 220 strongly presses the substrate. Therefore, it is possible to suppress the bias of the force with which the filling of the through hole presses the substrate 100 in the surface direction, and the warpage of the substrate is suppressed. As a result, a highly reliable substrate can be provided.

  The above effect will be specifically described. For example, the substrate is heated when the optical sensor is installed in the glass interposer. During the heating, the already formed first through electrode 210 and second through electrode 220 press the substrate 100 in the surface direction. According to the configuration of the present invention, the bias of the pressing force can be suppressed, and the warpage of the substrate 100 can be suppressed. In addition, when the first through electrode 210 and the second through electrode 220 are formed by electrolytic plating, the first through electrode 210 and the second through electrode 220 are formed in a state where the substrate 100 is heated. When the formation of the first through electrode 210 and the second through electrode 220 is completed, the substrate is cooled from the overheated state to the room temperature, and the first through electrode 210 and the second through electrode 220 that have been expanded by heating contract at that time. . According to the configuration of the present invention, it is possible to suppress the bias of the force by which the substrate 100 is pulled in the surface direction due to the contraction, and it is possible to suppress the warpage of the substrate 100.

  Although FIG. 3 illustrates the structure in which the first through electrode 210 and the second through electrode 220 fill the inside of each through hole, the present invention is not limited to this structure. For example, the through electrode may be disposed only on the side wall portion of the through hole, and a space may be provided inside the through electrode. Further, the first through electrode 210 and the first wiring 212 or the second wiring 214 may be integrally formed. Similarly, the second through electrode 220 and the third wiring 222 or the fourth wiring 224 may be integrally formed.

<Modification of Embodiment 1>
A modification of the first embodiment will be described with reference to FIGS. In the modified example of Embodiment 1, the through-hole of the shape different from FIG. 1B is formed. Hereinafter, the shape of each through hole in FIGS. 4 to 8 will be described in detail. 4 to 8 are sectional views of a through hole forming substrate according to a modification of the embodiment of the present invention.

[Configuration of the through-hole forming substrate 10A]
As shown in FIG. 4, in the through-hole forming substrate 10A according to the first modification of the first embodiment of the present invention, the first through-hole 110A and the second through-hole 120A are provided in the substrate 100A. 110 A of 1st through-holes and 120 A of 2nd through-holes have a shape from which a hole diameter differs in the plate | board thickness direction of the board | substrate 100A, as shown in FIG.

  110 A of 1st through-holes have what is called a drum shape provided with the top part 118A which protruded in the direction (plane direction of the board | substrate 100A) parallel to the upper surface 102A of the board | substrate 100A from the upper opening end 112A. Similarly, the second through hole 120A has a drum shape including a top portion 128A protruding from the upper opening end 122A in the planar direction of the substrate 100A. That is, the hole diameter of the first through-hole 110A gradually decreases from the upper surface 102A or the lower surface 104A toward the top 118A. Similarly, the hole diameter of the second through hole 120A has a shape that gradually decreases from the upper surface 102A or the lower surface 104A toward the crown portion 128A.

  In other words, the first through hole 110A has an upper opening end 112A having a larger hole diameter than the first region 116A on the upper surface 102A side, and is located on the lower surface 104A side than the first region 116A and the upper opening end 112A. The lower opening end 114A has a large hole diameter. The second through hole 120A has a lower opening end 124A having a larger hole diameter than the second region 126A on the lower surface 104A side, and an upper opening having a larger hole diameter than the second region 126A and the lower opening end 124A on the upper surface 102A side. It has an end 122A. The first region 116A in which the hole diameter of the first through hole 110A is smaller than the other is provided on the upper surface 102A side from the substrate intermediate position 106A. The second region 126A in which the hole diameter of the second through hole 120A is smaller than the other is provided on the lower surface 104A side with respect to the substrate intermediate position 106A.

  In other words, in each of the first through hole 110A and the second through hole 120A, the interval between the side walls facing each other is gradually increased from the upper surface 102A and the lower surface 104A toward the top part 118A and the top part 128A. It is narrower. Here, the first region 116A corresponds to the smallest hole diameter (inner diameter) in the first through hole 110A. Similarly, the second region 126A corresponds to the smallest hole diameter (inner diameter) in the second through hole 120A.

  FIG. 3 exemplifies a structure in which the first through hole 110A and the second through hole 120A have a vertically symmetrical shape. That is, FIG. 3 shows a structure in which the distance from the substrate intermediate position 106A to the head top portion 118A is the same as the distance from the substrate intermediate position 106A to the head top portion 128A. However, the present invention is not limited to this structure. For example, the distance from the substrate intermediate position 106A to the head top portion 118A may be different from the distance from the substrate intermediate position 106A to the head top portion 128A.

[Configuration of the through-hole forming substrate 10B]
As shown in FIG. 5, in the through hole forming substrate 10B according to Modification 2 of Embodiment 1 of the present invention, the substrate 100B is provided with a first through hole 150B and a second through hole 160B. As shown in FIG. 5, the first through hole 150B and the second through hole 160B have shapes having different hole diameters in the thickness direction of the substrate 100B.

  The first through hole 150B and the second through hole 160B are through holes having a T-shaped cross-sectional structure. In other words, the first through hole 150B has a third region 156B having a larger hole diameter on the upper surface 102B side than the substrate intermediate position 106B of the substrate 100B. Further, the second through hole 160B has a fourth region 166B having a larger hole diameter on the lower surface 104B side than the substrate intermediate position 106B. Here, as shown in FIG. 5, the third region 156B is provided at the upper opening end 152B of the upper surface 102B. The fourth region 166B is provided at the lower opening end 164B of the lower surface 104B.

[Configuration of the through-hole forming substrate 10C]
As shown in FIG. 6, in the through hole forming substrate 10C according to the third modification of the first embodiment of the present invention, the first through hole 150C and the second through hole 160C are provided in the substrate 100C. As shown in FIG. 6, the first through hole 150C and the second through hole 160C have shapes having different hole diameters in the thickness direction of the substrate 100C.

  The first through hole 150C has a barrel shape including a recessed portion 158C that is recessed from the upper opening end 152C in a direction parallel to the upper surface 102C of the substrate 100C (a planar direction of the substrate 100C). Similarly, the second through hole 160A has a barrel shape including a depressed portion 168C that is recessed from the upper opening end 162C in the planar direction of the substrate 100C. That is, the hole diameter of the first through hole 150C gradually increases from the upper surface 102C or the lower surface 104C toward the depressed portion 158C. Similarly, the hole diameter of the second through-hole 160C gradually increases from the upper surface 102C or the lower surface 104C toward the depressed portion 168C.

  In other words, the first through hole 150C has an upper opening end 152C having a smaller hole diameter than the third region 156C on the upper surface 102C side, and is located on the lower surface 104C side than the third region 156C and the upper opening end 152C. The lower opening end 154C has a small hole diameter. The second through hole 160C has a lower opening end 164C having a smaller hole diameter than the fourth region 166C on the lower surface 104C side, and an upper opening having a smaller hole diameter than the fourth region 166C and the lower opening end 164C on the upper surface 102C side. It has an end 162C. The third region 156C in which the hole diameter of the first through-hole 150C is larger than the others is provided on the upper surface 102C side from the substrate intermediate position 106C. The fourth region 166C in which the hole diameter of the second through hole 160C is larger than the other is provided on the lower surface 104C side with respect to the substrate intermediate position 106C.

  In other words, in each of the first through hole 150C and the second through hole 160C, the interval between the side walls facing each other is gradually increased from the upper surface 102C and the lower surface 104C toward the depressed portion 158C and the depressed portion 168C, respectively. It is getting wider. Here, the third region 156C corresponds to the largest hole diameter (outermost diameter) in the first through hole 150C. Similarly, the fourth region 166C corresponds to the largest hole diameter (outermost diameter) in the second through hole 160C.

  FIG. 6 illustrates a structure in which the first through hole 150C and the second through hole 160C have a vertically symmetrical shape. That is, FIG. 6 shows a structure in which the distance from the substrate intermediate position 106C to the depressed portion 158C is the same as the distance from the substrate intermediate position 106C to the depressed portion 168C. However, the present invention is not limited to this structure. For example, the distance from the substrate intermediate position 106C to the depressed portion 158C may be different from the distance from the substrate intermediate position 106C to the depressed portion 168C.

[Configuration of the through-hole forming substrate 10D]
As shown in FIG. 7, in the through hole forming substrate 10D according to the fourth modification of the first embodiment of the present invention, the first through hole 170D, the second through hole 180D, the first recess 172D, and the second recess are formed in the substrate 100D. 182D is provided. As shown in FIG. 7, the first through hole 170D and the second through hole 180D have the same hole diameter in the plate thickness direction of the substrate 100D. In the vicinity of the first through hole 170D and the second through hole 180D, the first recess 172D and the second recess 182D are disposed on different surfaces. The first recess 172D is provided corresponding to the first through hole 170D. The second recess 182D is provided corresponding to the second through hole 180D.

  Here, the first through hole 170D and the first recess 172D are regarded as one structure (referred to as a first structure), and the second through hole 180D and the second recess 182D are combined into one structure (the second structure and the second structure). It can be said that the first structure and the second structure have a vertically symmetrical shape.

[Configuration of the through-hole forming substrate 10E]
As shown in FIG. 8, in the through-hole forming substrate 10E according to Modification 5 of Embodiment 1 of the present invention, the first through-hole 310E and the second through-hole 320E are provided in the substrate 100E. As shown in FIG. 8, the first through hole 310E and the second through hole 320E have a shape that is inclined with respect to a direction orthogonal to the planar direction of the substrate 100E.

  The first through hole 310E includes a first inclined portion 315E that is inclined with respect to a direction orthogonal to the upper surface 102E or the lower surface 104E of the substrate 100E. The second through hole 320E has a second inclined portion 325E that is inclined in a direction different from the first inclined portion 315E with respect to a direction orthogonal to the upper surface 102E or the lower surface 104E. FIG. 8 shows a structure in which the first inclined portion 315E and the second inclined portion 325E are inclined in opposite directions.

  Here, the 1st inclination part 315E and the 2nd inclination part 325E are provided in the one part area | region in the mother glass substrate or each interposer. That is, in order to obtain an effect of suppressing warpage over the entire area of the substrate, the first inclined portion 315E and the second inclined portion 325E are also provided in pairs in a region near the substrate end of the mother glass substrate or each interposer. ing. In other words, it can be said that one of the first inclined portion 315E and the second inclined portion 325E is inclined in a direction away from the center of the substrate 100E from the upper surface 102E toward the lower surface 104E.

  In FIG. 8, the first through hole 310E and the second through hole 320E are illustrated as shapes in which the hole diameter does not change in the thickness direction of the substrate 100E, but are not limited to this shape. For example, as shown below, the first through hole 310E and the second through hole 320E may have shapes having different hole diameters in the thickness direction of the substrate 100E. 9 to 12 show a through hole forming substrate according to a modification of the embodiment of the present invention.

[Configuration of Through Hole Forming Substrate 10F]
9 is a through hole having a shape in which the through hole of FIG. 1B and the through hole of FIG. 8 are combined. As shown in FIG. 9, the first through hole 110F has a first region 116F having a smaller hole diameter on the lower surface 104F side than the substrate intermediate position 106F. Similarly, the second through hole 120F has a second region 126F having a smaller hole diameter on the upper surface 102F side than the substrate intermediate position 106F. The first region 116F is provided at the lower opening end 114F of the lower surface 104F. The second region 126F is provided at the upper opening end 122F of the upper surface 102F. In other words, the hole diameter of the first through hole 110F gradually decreases from the upper surface 102F toward the lower surface 104F. Further, the diameter of the second through hole 120F gradually decreases from the lower surface 104F toward the upper surface 102F. Although FIG. 9 shows an example in which the first through hole 110F and the second through hole 120F are vertically symmetrical, the present invention is not limited to this.

[Configuration of the through-hole forming substrate 10G]
FIG. 10 shows a through hole having a combination of the through hole shown in FIG. 4 and the through hole shown in FIG. As shown in FIG. 10, the first through hole 110G has an upper opening end 112G having a larger hole diameter than the first region 116G on the upper surface 102G side, and is closer to the lower surface 104G side than the first region 116G and the upper opening end 112G. A lower opening end 114G having a large hole diameter is provided. Similarly, the second through hole 120G has a lower opening end 124G having a larger hole diameter than the second region 126G on the lower surface 104G side, and an upper portion having a hole diameter larger than the second region 126G and the lower opening end 124G on the upper surface 102G side. It has an open end 122G. In addition, in FIG. 10, although the example through which the 1st through-hole 110G and the 2nd through-hole 120G are vertically symmetrical was shown, it is not limited to this.

[Configuration of the through-hole forming substrate 10H]
FIG. 11 shows a through hole having a combination of the through hole of FIG. 5 and the through hole of FIG. As shown in FIG. 11, the first through hole 150H has a third region 156H having a hole diameter larger than the other, on the upper surface 102H side of the substrate intermediate position 106H. Similarly, the second through hole 160H has a fourth region 166H having a larger hole diameter on the lower surface 104H side than the substrate intermediate position 106H. The third region 156H is provided at the upper opening end 152H of the upper surface 102H, and the fourth region 166H is provided at the lower opening end 164H of the lower surface 104H. Although FIG. 11 shows an example in which the first through hole 150H and the second through hole 160H are vertically symmetric, the present invention is not limited to this.

[Configuration of the through-hole forming substrate 10L]
FIG. 12 shows a through hole having a combination of the through hole shown in FIG. 6 and the through hole shown in FIG. As shown in FIG. 12, the first through hole 150L has an upper opening end 152L having a smaller hole diameter than the third region 156L on the upper surface 102L side, and has a hole diameter smaller than the third region 156L and the upper opening end 152L on the lower surface 104L side. Has a small lower open end 154L. Similarly, the second through hole 160L has a lower opening end 164L having a smaller hole diameter than the fourth region 166L on the lower surface 104L side, and an upper opening having a smaller hole diameter than the fourth region 166L and the lower opening end 164L on the upper surface 102L side. It has an end 162L. Although FIG. 12 shows an example in which the first through hole 150L and the second through hole 160L are vertically symmetrical, the present invention is not limited to this.

<Embodiment 2>
A configuration of the through electrode substrate 20 according to the second embodiment of the present invention will be described with reference to FIGS. 13 and 14.

[Configuration of Through Electrode Substrate 20]
The configuration of the through electrode substrate 20 will be described with reference to FIG. 13 (FIGS. 13A and 13B). FIG. 13A is a plan view illustrating an outline of a through electrode substrate according to an embodiment of the present invention. FIG. 13B is a BB ′ cross-sectional view of the through electrode substrate according to one embodiment of the present invention. As illustrated in FIGS. 13A and 13B, the through electrode substrate 20 according to the second embodiment of the present invention includes a substrate 400, a first through electrode 430, and a second through electrode 440.

  The substrate 400 is provided with a first through hole 410 and a second through hole 420. The first through electrode 430 is disposed inside the first through hole 410 and connects the first wiring 412 disposed on the upper surface 402 and the second wiring 414 disposed on the lower surface 404. The second through electrode 440 is disposed inside the second through hole 420 and connects the third wiring 422 disposed on the upper surface 402 and the fourth wiring 424 disposed on the lower surface 404. Here, the cross-sectional shape of the first through electrode 430 is different from the cross-sectional shape of the second through electrode 440. Although FIG. 13B shows an example in which the first through electrode 430 and the second through electrode 440 are vertically symmetrical, the present invention is not limited to this.

  The first through electrode 430 includes a first filling part 432 and a first conformal part 434. The first filling portion 432 is formed integrally with the first wiring 412. The first conformal portion 434 is formed integrally with the second wiring 414. Here, the first filling portion 432 refers to a conductive material disposed on one surface side of the substrate 400 so as to fill the inside of the first through hole 410. The first conformal portion 434 refers to a conductive material that is disposed only on the side wall portion of the first through-hole 410 on the other surface side of the substrate 400 and has a space therein. As shown in FIG. 13B, a space 436 is provided inside the first conformal portion 434. The second through electrode 440 includes a second filling portion 444 and a second conformal portion 442. The second filling portion 444 and the second conformal portion 442 are the same as the first filling portion 432 and the first conformal portion 434 described above, and thus description thereof is omitted here.

  Since the first filling portion 432 and the second filling portion 444 have no escape space when the conductive material of the first filling portion 432 and the second filling portion 444 expands due to heat treatment, the inner walls of the first through hole 410 and the second through hole 420 are not provided. Press strongly. On the other hand, in the first conformal part 434 and the second conformal part 442, spaces 436 and 446 are provided even if the conductive material of the first conformal part 434 and the second conformal part 442 is expanded by heat treatment. Therefore, the force which presses the inner wall of the 1st through-hole 410 and the 2nd through-hole 420 is weak compared with the above.

  As described above, according to the through electrode substrate 20 according to Embodiment 2 of the present invention, the inner wall of the first through hole 410 is strongly pressed on the upper surface 402 side and weakly pressed on the lower surface 404 side. On the other hand, contrary to the above, the inner wall of the second through-hole 420 is strongly pressed on the lower surface 404 side and weakly pressed on the upper surface 402 side. Therefore, it is possible to suppress the bias of the force that the through electrode of the through hole presses the substrate 400 in the surface direction, and the warpage of the substrate is suppressed. As a result, a highly reliable substrate can be provided.

  In FIG. 13B, although the strength which presses the inner wall of a through-hole by the filling part and the conformal part was adjusted, it is not limited to this method. For example, you may adjust the strength which presses the inner wall of a through-hole with a high-density material and a low-density material. As the low-density material, for example, a porous material containing bubbles inside may be used. Moreover, you may adjust the strength which presses the inner wall of a through-hole with the material from which a thermal expansion coefficient differs.

[Method for Manufacturing Penetration Electrode Substrate 20]
A method for manufacturing the through electrode substrate 20 according to the second embodiment of the present invention will be described with reference to FIG. 14 (FIGS. 14A to 14D). In FIG. 14, the same elements as those shown in FIG. Here, the manufacturing method of the glass interposer which uses a glass substrate as a penetration electrode substrate is demonstrated.

  FIG. 14A is a cross-sectional view showing a step of forming a seed layer in the method for manufacturing a through electrode substrate according to an embodiment of the present invention. As shown in FIG. 14A, the first seed layer 452 is formed on the upper surface 402 side of the substrate 400 provided with the first through hole 410 and the second through hole 420, and the second seed layer 464 is formed on the lower surface 404 side. . The first seed layer 452 and the second seed layer 464 are made of, for example, a metal such as copper (Cu), titanium (Ti), tantalum (Ta), tungsten (W), nickel (Ni), or an alloy using these metals. A layer or a laminate can be used, and can be formed by a PVD method (such as a vacuum evaporation method and a sputtering method) or a CVD method.

  As the material used for the first seed layer 452, the same material as that of the first plating layer 458 to be formed later on the seed layer can be selected. The material used for the second seed layer 464 can be the same material as the second plating layer 468 to be formed on the seed layer later. The first seed layer 452 and the second seed layer 464 are provided for use as seeds in an electrolytic plating method in a later step. Here, the first seed layer 452 and the second seed layer 464 are preferably formed to a thickness of 20 nm to 1 μm. The first seed layer 452 and the second seed layer 464 are preferably formed with a thickness of 100 nm to 300 nm.

  FIG. 14B is a cross-sectional view showing a process of forming a plating layer and closing one end of the through hole in the method for manufacturing the through electrode substrate according to one embodiment of the present invention. The first plating layer 458 is formed by an electrolytic plating method in which a resist mask 620 is formed on the first seed layer 452 and the first seed layer 452 is energized. The first plating layer 458 is formed on the first seed layer 452 exposed from the resist mask 620 and is formed so as to close the upper surface 402 side of the first through hole 410. The second plating layer 468 is formed by an electrolytic plating method in which a resist mask 630 is formed on the second seed layer 464 and the second seed layer 464 is energized. The second plating layer 468 is formed on the second seed layer 464 exposed from the resist mask 630 and is formed so as to close the lower surface 404 side of the second through hole 420.

  When the upper surface 402 side of the first through hole 410 and the lower surface 404 side of the second through hole 420 are closed by the first plating layer 458 and the second plating layer 468, the resist masks 620 and 630 are removed, and the first plating layer 458 is removed. The first seed layer 452 and the second seed layer 464 exposed from the second plating layer 468 are etched. The etching is performed by whole surface etching.

  FIG. 14C is a cross-sectional view illustrating a process of forming a plating layer and filling a part of the through hole with the plating layer in the method for manufacturing the through electrode substrate according to the embodiment of the present invention. The first filling plating layer 472 is formed by an electrolytic plating method in which the first plating layer 458 is energized. The second filling plating layer 484 is formed by an electrolytic plating method in which the second plating layer 468 is energized. Here, since a plating layer may be formed inside each of the first through hole 410 and the second through hole 420, the plating solution may be supplied only to the side on which the plating layer is to be formed. For example, in the step of forming the first filling plating layer 472, electrolytic plating may be performed by supplying a plating solution only to the lower surface 404 side that is the opening side of the first through-hole 410. Of course, the first filling plating layer 472 and the second filling plating layer 484 may be formed in the same process by supplying a plating solution to both sides of the upper surface 402 and the lower surface 404.

  The first filling plating layer 472 and the second filling plating layer 484 are formed so as to fill a part of each of the first through hole 410 and the second through hole 420. FIG. 14C shows an example in which the ratio of the first filling plating layer 472 and the second filling plating layer 484 filling the first through hole 410 and the second through hole 420 is less than half the depth of each through hole. However, it is not limited to this example. The ratio of the filling plating layer filling the through holes may be half or more of the depth of each through hole. What is necessary is just to adjust the ratio with which a filling plating layer fills a through-hole according to the throwing power of the conformal layer formed at a next process.

  FIG. 14D is a cross-sectional view showing a step of forming a conductive layer in a region where the plated layer of the through hole is not filled in the method for manufacturing the through electrode substrate according to one embodiment of the present invention. The first conformal layer 476 forms a conductive layer from the lower surface 404 side, and is formed by photolithography and etching. Similarly, the second conformal layer 486 is formed by photolithography and etching by forming a conductive layer from the upper surface 402 side. The first conformal layer 476 and the second conformal layer 486 can be formed using the same material and method as the seed layer.

  By the above method, a structure similar to the structure shown in FIG. 13B can be formed. Here, the first seed layer 452 and the first plating layer 458 of FIG. 14D correspond to the first wiring 412 of FIG. 13B. Further, the portion of the first conformal layer 476 in FIG. 14D that is disposed in contact with the lower surface 404 corresponds to the second wiring 414 in FIG. 13B. Further, the first filling plating layer 472 of FIG. 14D corresponds to the first filling portion 432 of FIG. 13B. In addition, a portion of the first conformal layer 476 in FIG. 14D that is disposed inside the first through hole 410 corresponds to the first conformal portion 434 in FIG. 13B.

  A modification of the second embodiment will be described with reference to FIGS. 15 to 18. In the modification of the second embodiment, a through electrode substrate having a through hole shape or a filling structure different from that in FIG. 13B will be described.

[Configuration of Through Electrode Substrate 20A]
FIG. 15 is a cross-sectional view of a through electrode substrate according to a modification of one embodiment of the present invention. The structure of the through electrode substrate 20A according to Modification 1 of Embodiment 2 is a structure in which the through hole shown in FIG. 4 and the filling structure shown in FIG. 13B are combined. As shown in FIG. 15, in the first through hole 410A, the first filling portion 432A is disposed on the upper surface 402A side, and the first conformal portion 434A is disposed on the lower surface 404A side. The first filling portion 432A and the first conformal portion 434A are connected by the top portion 118A of the first through hole 410A. As for the second through hole 420A, the second conformal portion 442A disposed on the upper surface 402A side and the second filling portion 444A disposed on the lower surface 404A side are connected by the top portion 128A of the second through hole 420A. Has been.

[Configuration of Through Electrode Substrate 20B]
FIG. 16 is a cross-sectional view of a through electrode substrate according to a modification of one embodiment of the present invention. As illustrated in FIG. 16, the through electrode substrate 20B according to the second modification of the second embodiment includes a first through electrode 510B and a second through electrode 520B. The first through electrode 510B includes a first electrode 512B, a first conformal portion 514B, and a first bottom portion 516B. The first electrode 512B, the first conformal portion 514B, and the first bottom portion 516B are integrally formed. Here, the first bottom portion 516B closes the opening end on the upper surface 402B side of the first through hole 410B. Similarly, the second through electrode 520B includes a second electrode 522B, a second conformal portion 524B, and a second bottom portion 526B. The second electrode 522B, the second conformal portion 524B, and the second bottom portion 526B are integrally formed. Here, the second bottom portion 526B closes the opening end of the second through hole 420B on the lower surface 404B side. The first through electrode 510B and the second through electrode 520B can be formed using the same material and method as the seed layer.

[Method of manufacturing through electrode substrate 20B]
A manufacturing method of the through electrode substrate 20B according to the second modification of the second embodiment of the present invention will be described with reference to FIG. 17 (FIGS. 17A to 17C). In FIG. 17, the same elements as those shown in FIG. Here, the manufacturing method of the glass interposer which uses a glass substrate as a penetration electrode substrate is demonstrated.

  FIG. 17A shows a process of forming a through electrode from the second surface side of the through hole by closing the end portion of the first surface of the through hole in the through electrode substrate manufacturing method according to the modification of the embodiment of the present invention. It is sectional drawing shown. As shown in FIG. 17A, a film-like sheet 640B is attached to the upper surface 402B side of the substrate 400B, and the first through electrode 510B is formed from the lower surface 404B side. After forming the first through electrode 510B, the film-like sheet 640B is peeled off.

  FIG. 17B shows a step of forming a through electrode from the first surface side of the through hole in the through electrode substrate manufacturing method according to the modification of the embodiment of the present invention by closing the end portion of the second surface of the through hole. It is sectional drawing shown. As shown in FIG. 17B, a film-like sheet 650B is attached to the lower surface 404B side of the substrate 400B, and the second through electrode 520B is formed from the upper surface 402B side. After forming the second through electrode 520B, the film-like sheet 650B is peeled off. The structure shown in FIG. 16 can be obtained by peeling the film-like sheet 650B.

  FIG. 17C is a cross-sectional view showing a step of forming a wiring connected to the through electrode in the through electrode substrate manufacturing method according to the modification of the embodiment of the present invention. As shown in FIG. 17C, the first wiring 532B connected to the first bottom 516B is formed on the upper surface 402B side of the substrate 400B, and the second wiring 534B connected to the first electrode 512B is formed on the lower surface 404B side of the substrate 400B. Form. Similarly, a third wiring 542B connected to the second electrode 522B is formed on the upper surface 402B side of the substrate 400B, and a fourth wiring 544B connected to the second bottom portion 526B is formed on the lower surface 404B side of the substrate 400B.

[Configuration of Through Electrode Substrate 20C]
FIG. 18 is a cross-sectional view of a through electrode substrate according to a modification of one embodiment of the present invention. The through electrode substrate 20C according to the third modification of the second embodiment is similar to the through electrode substrate 20B shown in FIG. 16, but the through electrode substrate 20C has a filler 550C provided inside the second through electrode 520C. This is different from the through electrode substrate 20B. The filler 550C is formed inside the second through electrode 520C and is not formed inside the first through electrode 510C. In other words, the structure (the first conformal portion 514C and the first bottom portion 516C) disposed inside the first through-hole 410C and the structure (the first body disposed within the second through-hole 420C) (the first conformal portion 514C and the first bottom portion 516C). It can also be said that the shape is different from the two conformal portion 524C, the second bottom portion 526C, and the filler 550C).

  As described above, also in the through electrode substrate according to the modification of the second embodiment, as in the through electrode substrate 20 of the second embodiment, the portion where the first through hole 410 is strongly pressed and the second through hole 420 are strong. The place to be pressed is located on a different surface side of the substrate 400. Therefore, similarly to the through electrode substrate 20, it is possible to suppress the bias of the force that the through electrode of the through hole presses the substrate 400 in the surface direction, and the warpage of the substrate is suppressed. As a result, a highly reliable substrate can be provided.

<Embodiment 3>
The configuration of the substrate 30 according to the third embodiment of the present invention will be described with reference to FIG. The substrate 30 shown in Embodiment 3 shows the structure of the substrate itself, and by using it together with Embodiment 1 and Embodiment 2 described above, it is possible to more effectively suppress the warpage of the substrate.

  FIG. 19 is a cross-sectional view of a substrate according to an embodiment of the present invention. As shown in FIG. 19, in the substrate 30 of the third embodiment, the first thick plate portion 710 is provided on the upper surface 702 side of the substrate 700, and the second thick plate portion 720 is provided on the lower surface 704 side of the substrate 700. ing. The first thick plate portion 710 and the second thick plate portion 720 are formed integrally with the substrate 700. In this way, by providing the first thick plate portion 710 and the second thick plate portion 720 on different surfaces of the substrate 700, the expansion on the upper surface 702 side of the substrate 700 caused by the first thick plate portion 710 and the second thick plate. By the expansion on the lower surface 704 side of the substrate 700 caused by the portion 720, the difference in the coefficient of thermal expansion between the front and back caused by the shape of the glass substrate can be reduced. Therefore, the rigidity with respect to the warp of the substrate 700 can be improved while suppressing the warp of the substrate 700. As a result, a highly reliable substrate can be provided.

<Embodiment 4>
The configuration of the substrate 40 according to Embodiment 4 of the present invention will be described with reference to FIG. The substrate 40 shown in Embodiment 4 shows the structure of the conductive layer disposed on the substrate, and by using together with the above Embodiments 1 to 3, it is possible to more effectively suppress the warpage of the substrate. Can do.

  FIG. 20 is a cross-sectional view of a substrate according to an embodiment of the present invention. As shown in FIG. 20, in the substrate 40, the first conductive layer 812 is embedded on the upper surface 802 side of the substrate 800. The fourth conductive layer 824 is embedded on the lower surface 804 side of the substrate 800. On the other hand, the second conductive layer 814 is disposed on the surface of the substrate 800 on the lower surface 804 side of the substrate 800. The third conductive layer 822 is disposed on the surface of the substrate 800 on the upper surface 802 side of the substrate 800. Here, the first conductive layer 812 and the second conductive layer 814 are arranged so that at least part of the regions overlap. The third conductive layer 822 and the fourth conductive layer 824 are arranged so that at least a part of the regions overlap each other.

  As described above, according to the substrate 40, when the conductive layer expands due to heat treatment or the like, the first conductive layer 812 presses the upper surface 802 of the substrate 800 in the surface direction, and the fourth conductive layer 824 presses the lower surface 804 of the substrate 800. Press in the surface direction. Therefore, it is possible to suppress the bias of the force that the through electrode of the through hole presses the substrate 800 in the surface direction, and the warpage of the substrate is suppressed. As a result, a highly reliable substrate can be provided.

  Note that the present invention is not limited to the above-described embodiment, and can be modified as appropriate without departing from the spirit of the present invention.

10: Through-hole forming substrate, 19, 20: Through-electrode substrate, 30, 40, 100, 400, 700, 800: Substrate, 102, 402, 702, 802: Upper surface, 104, 404, 704, 804: Lower surface, 106 : Substrate intermediate position, 110, 150, 170, 310, 410: first through hole, 112, 122, 152, 162: upper opening end, 114, 124, 164, 154: lower opening end, 116: first region, 118, 128: crown, 120, 160, 180, 320: second through hole, 126: second region, 130: first altered region, 140: second altered region, 156: third region, 158, 168: Dent, 166: fourth region, 172: first recess, 182: second recess, 210, 430, 510: first penetration Poles, 212, 412, 532: first wiring, 214, 414, 534: second wiring, 220, 440, 520: second through electrode, 222, 422, 542: third wiring, 224, 424, 544: first 4 wirings, 315: first inclined portion, 325: second inclined portion, 420: second through hole, 432: first filling portion, 434: first conformal portion, 436, 446: space, 444: second filling , 452: first seed layer, 458: first plating layer, 464: second seed layer, 468: second plating layer, 472: first filling plating layer, 476: first conformal layer, 484: second Filled plating layer, 486: second conformal layer, 512: first electrode, 514: first conformal part, 516: first bottom part, 522 : Second electrode, 524: second conformal part, 526: second bottom part, 550C: filler, 600: light source, 601: laser light, 610: container, 611: chemical solution, 620, 630: resist mask, 640, 650: film-like sheet, 710: first thick plate portion, 720: second thick plate portion, 812: first conductive layer, 814: second conductive layer, 822: third conductive layer, 824: fourth conductive layer

Claims (20)

A substrate provided with a first through hole and a second through hole,
The first through hole has a hole diameter closer to the first surface than a substrate intermediate position that is intermediate between the first surface of the substrate and the second surface opposite to the first surface. Having a first region smaller than the other pore diameter,
The through hole forming substrate, wherein the second through hole has a second region having a hole diameter smaller than other hole diameters of the second through hole on the second surface side of the substrate intermediate position. The first region is provided at an opening end of the first surface,
The second region is provided at an open end of the second surface;
The hole diameter of the first through hole gradually decreases from the second surface toward the first surface,
2. The through hole forming substrate according to claim 1, wherein a hole diameter of the second through hole gradually decreases from the first surface toward the second surface. The first through hole has a first opening end having a larger hole diameter than the first region on the first surface side, and has a hole diameter larger than that of the first region and the first opening end on the second surface side. Having a large second open end;
The second through hole has a third opening end having a larger hole diameter than the second region on the second surface side, and has a hole diameter larger than that of the second region and the third opening end on the first surface side. The through hole forming substrate according to claim 1, wherein the substrate has a large fourth opening end.   4. The through hole forming substrate according to claim 1, wherein the first through hole and the second through hole are symmetrical with respect to the intermediate position of the substrate. 5. A substrate provided with a first through hole and a second through hole,
The first through hole has a hole diameter closer to the first surface than a substrate intermediate position that is intermediate between the first surface of the substrate and the second surface opposite to the first surface. Having a third region larger than the other pore size;
The through hole forming substrate, wherein the second through hole has a fourth region having a hole diameter larger than other hole diameters of the second through hole on the second surface side of the substrate intermediate position. The third region is provided at an opening end of the first surface;
The through hole forming substrate according to claim 5, wherein the fourth region is provided at an opening end of the second surface. The first through hole has a first opening end having a smaller hole diameter than the third region on the first surface side, and has a hole diameter smaller than that of the third region and the first opening end on the second surface side. Having a small second open end,
The second through hole has a third opening end having a smaller hole diameter than the fourth region on the second surface side, and has a hole diameter smaller than that of the fourth region and the third opening end on the first surface side. 6. The through hole forming substrate according to claim 5, wherein the through hole forming substrate has a small fourth opening end.   The through hole forming substrate according to claim 5, wherein the first through hole and the second through hole are symmetrical with respect to the intermediate position of the substrate. A substrate provided with a first through hole and a second through hole,
The first through hole has a first inclined portion inclined with respect to a direction orthogonal to the first surface of the substrate,
The second through hole has a second inclined portion inclined with respect to a direction orthogonal to the first surface,
Either one of the first inclined portion or the second inclined portion is inclined in a direction away from the center of the substrate from the first surface toward the second surface opposite to the first surface. A through-hole forming substrate as a feature. The first through hole has a first region whose hole diameter is smaller than the other hole diameters of the first through hole on the first surface side than a substrate intermediate position that is intermediate between the first surface and the second surface. Have
The through hole according to claim 9, wherein the second through hole has a second region whose hole diameter is smaller than the other hole diameter of the second through hole on the second surface side of the substrate intermediate position. Hole forming substrate. The first region is provided at an opening end of the first surface,
The second region is provided at an open end of the second surface;
The hole diameter of the first through hole gradually decreases from the second surface toward the first surface,
11. The through hole forming substrate according to claim 10, wherein a hole diameter of the second through hole gradually decreases from the first surface toward the second surface. The first through hole has a first opening end having a larger hole diameter than the first region on the first surface side, and has a hole diameter larger than that of the first region and the first opening end on the second surface side. Having a large second open end;
The second through hole has a third opening end having a larger hole diameter than the second region on the second surface side, and has a hole diameter larger than that of the second region and the third opening end on the first surface side. The through hole forming substrate according to claim 10, wherein the substrate has a large fourth opening end.   The through hole forming substrate according to any one of claims 10 to 12, wherein the first through hole and the second through hole are symmetrical with respect to the intermediate position of the substrate. The first through hole has a third region having a hole diameter larger than the other hole diameters of the first through hole on the first surface side than a substrate intermediate position that is an intermediate point between the first surface and the second surface. Have
10. The through hole according to claim 9, wherein the second through hole has a fourth region having a hole diameter larger than other hole diameters of the second through hole on the second surface side of the substrate intermediate position. Hole forming substrate. The third region is provided at an opening end of the first surface;
The through hole forming substrate according to claim 14, wherein the fourth region is provided at an opening end of the second surface. The first through hole has a first opening end having a smaller hole diameter than the third region on the first surface side, and has a hole diameter smaller than that of the third region and the first opening end on the second surface side. Having a small second open end,
The second through hole has a third opening end having a smaller hole diameter than the fourth region on the second surface side, and has a hole diameter smaller than that of the fourth region and the third opening end on the first surface side. The through hole forming substrate according to claim 14, wherein the substrate has a small fourth opening end.   The through-hole forming substrate according to any one of claims 14 to 16, wherein the first through-hole and the second through-hole are symmetrical with respect to the substrate intermediate position. A substrate provided with a first through hole and a second through hole;
A first through hole, which is disposed inside the first through hole and connects a first wiring disposed on the first surface of the substrate and a second wiring disposed on the second surface opposite to the first surface. Electrodes,
A second through electrode disposed inside the second through hole and connecting a third wiring disposed on the first surface and a fourth wiring disposed on the second surface;
Have
The through electrode substrate, wherein the first through electrode and the second through electrode have different shapes. The first through electrode includes a first conductive portion filled with a conductive material in a hole diameter direction of the first through hole, and a second conductive material disposed so as to have a cavity inside the first through hole. A conductive portion;
The second through electrode includes a third conductive portion filled with a conductive material in a hole diameter direction of the second through hole, and a fourth conductive material disposed so as to have a cavity inside the second through hole. A conductive portion;
The first conductive portion is disposed on the first surface side,
The penetration electrode substrate according to claim 18, wherein the second conductive portion is disposed on the second surface side. A substrate provided with a first through hole and a second through hole;
A first structure disposed inside the first through hole;
A second structure disposed inside the second through hole;
Have
The substrate characterized in that the first structure and the second structure have different shapes.

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