JP2017041989A - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
- Publication number
- JP2017041989A JP2017041989A JP2015162999A JP2015162999A JP2017041989A JP 2017041989 A JP2017041989 A JP 2017041989A JP 2015162999 A JP2015162999 A JP 2015162999A JP 2015162999 A JP2015162999 A JP 2015162999A JP 2017041989 A JP2017041989 A JP 2017041989A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- semiconductor switch
- conversion device
- switch element
- power conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 230000002441 reversible effect Effects 0.000 claims description 28
- 239000000696 magnetic material Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 25
- 230000037431 insertion Effects 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 30
- 229910010271 silicon carbide Inorganic materials 0.000 description 29
- 238000011084 recovery Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 19
- 230000001965 increasing effect Effects 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 5
- 239000011162 core material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Inverter Devices (AREA)
Abstract
Description
なお、この発明の第1の実施例〜第3の実施例は、SiダイオードDのアノード側にインダクタンス要素Luを挿入したが、図7のようにカソード側に挿入しても同様の効果が得られる。
Claims (4)
- 半導体スイッチ素子に還流ダイオードを逆並列接続して構成したスイッチ素子で構成した電力変換装置において、前記還流ダイオードを、シリコンダイオードとワイドバンドギャップを有するダイオードとを並列接続して構成し、かつ前記シリコンダイオードと直列にインダクタンス要素を挿入接続したことを特徴とする電力変換装置。
- 前記インダクタンス要素は、前記半導体スイッチ素子と前記シリコンダイオードとを接続する配線自身によって形成することを特徴とする請求項1に記載の電力変換装置。
- 前記インダクタンス要素は、前記シリコンダイオードと、前記半導体スイッチ素子とを接続する配線に磁性体を磁気的に結合して形成することを特徴とする請求項1に記載の電力変換装置。
- 請求項1〜3に記載した電力変換装置により、鉄道車両用モータ駆動用の電力変換装置を構成することを特徴とする電力変換装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015162999A JP6641782B2 (ja) | 2015-08-20 | 2015-08-20 | 電力変換装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015162999A JP6641782B2 (ja) | 2015-08-20 | 2015-08-20 | 電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017041989A true JP2017041989A (ja) | 2017-02-23 |
JP6641782B2 JP6641782B2 (ja) | 2020-02-05 |
Family
ID=58203398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015162999A Active JP6641782B2 (ja) | 2015-08-20 | 2015-08-20 | 電力変換装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6641782B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020008927A1 (ja) * | 2018-07-04 | 2020-01-09 | 三菱電機株式会社 | 車両用電力変換装置 |
CN112750811A (zh) * | 2019-10-30 | 2021-05-04 | 三菱电机株式会社 | 半导体装置 |
WO2021131611A1 (ja) * | 2019-12-25 | 2021-07-01 | ローム株式会社 | 半導体モジュール |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH118968A (ja) * | 1997-06-17 | 1999-01-12 | Fuji Electric Co Ltd | 電力変換回路 |
JP2003289673A (ja) * | 2002-03-28 | 2003-10-10 | Honda Motor Co Ltd | 共振型インバータ |
JP2009225570A (ja) * | 2008-03-17 | 2009-10-01 | Fuji Electric Holdings Co Ltd | 電力変換装置 |
JP2010200401A (ja) * | 2009-02-23 | 2010-09-09 | Nissan Motor Co Ltd | スイッチング回路 |
JP2013219874A (ja) * | 2012-04-05 | 2013-10-24 | Hitachi Ltd | 半導体駆動回路および電力変換装置 |
JP5663075B2 (ja) * | 2013-11-20 | 2015-02-04 | 株式会社日立製作所 | フリーホイールダイオードを有する回路装置、回路モジュールおよび電力変換装置 |
-
2015
- 2015-08-20 JP JP2015162999A patent/JP6641782B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH118968A (ja) * | 1997-06-17 | 1999-01-12 | Fuji Electric Co Ltd | 電力変換回路 |
JP2003289673A (ja) * | 2002-03-28 | 2003-10-10 | Honda Motor Co Ltd | 共振型インバータ |
JP2009225570A (ja) * | 2008-03-17 | 2009-10-01 | Fuji Electric Holdings Co Ltd | 電力変換装置 |
JP2010200401A (ja) * | 2009-02-23 | 2010-09-09 | Nissan Motor Co Ltd | スイッチング回路 |
JP2013219874A (ja) * | 2012-04-05 | 2013-10-24 | Hitachi Ltd | 半導体駆動回路および電力変換装置 |
JP5663075B2 (ja) * | 2013-11-20 | 2015-02-04 | 株式会社日立製作所 | フリーホイールダイオードを有する回路装置、回路モジュールおよび電力変換装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020008927A1 (ja) * | 2018-07-04 | 2020-01-09 | 三菱電機株式会社 | 車両用電力変換装置 |
JPWO2020008927A1 (ja) * | 2018-07-04 | 2021-08-05 | 三菱電機株式会社 | 車両用電力変換装置 |
CN112750811A (zh) * | 2019-10-30 | 2021-05-04 | 三菱电机株式会社 | 半导体装置 |
WO2021131611A1 (ja) * | 2019-12-25 | 2021-07-01 | ローム株式会社 | 半導体モジュール |
Also Published As
Publication number | Publication date |
---|---|
JP6641782B2 (ja) | 2020-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5118258B2 (ja) | 電力変換装置 | |
US20200035656A1 (en) | Power module | |
US10320278B2 (en) | Semiconductor device having a decreased switching loss | |
CN102668348B (zh) | 转换器 | |
JP5277579B2 (ja) | 半導体装置 | |
JP5970194B2 (ja) | 半導体スイッチング素子の駆動回路並びにそれを用いた電力変換回路 | |
JP6136011B2 (ja) | 半導体装置、および電力変換装置 | |
JP2012115134A (ja) | 低インダクタンス高効率のインダクションマシン及びその製作方法 | |
JP2003164140A (ja) | 半導体変換回路及び回路モジュール | |
JP2014068428A (ja) | 電力変換装置 | |
JP2009011013A (ja) | 電力変換装置 | |
US20180375509A1 (en) | Gate drive circuit, power conversion apparatus, and railway vehicle | |
JP6641782B2 (ja) | 電力変換装置 | |
Lee et al. | GaN-based single phase brushless DC motor drive for high-speed applications | |
WO2014024596A1 (ja) | インバータ駆動回路 | |
JP6024177B2 (ja) | パワー半導体モジュール | |
CN114665735A (zh) | Anpc三电平逆变拓扑电路、控制方法及控制装置 | |
JP6338145B2 (ja) | 半導体装置及びそれを用いた電力変換装置 | |
JP2018082575A (ja) | 半導体装置 | |
Lorenz | Power semiconductor devices and smart power IC's-the enabling technology for future high efficient power conversion systems | |
JP2018107893A (ja) | パワーコントロールユニット | |
JP2001145369A (ja) | インバータ | |
TW202349834A (zh) | 馬達驅動裝置 | |
Ohashi et al. | The Latest Generation Small Intelligent Power Module for Compact Inverter systems | |
JP2024043151A (ja) | 半導体スイッチング素子のゲート駆動回路、電動機制御システムおよび半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190409 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190411 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190517 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190827 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190913 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191203 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191216 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6641782 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |