JP2017034063A - Power semiconductor device and manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power semiconductor device that enables terminal bonding by soldering at relatively low cost without forming a frame body by using a heat-resistant resin.SOLUTION: A power semiconductor device comprises: a cooler 50; a wiring pattern P arranged on the cooler; a switching element S and a rectification element D connected with each other by a solder on the wiring pattern; plate-like leads L1 and L2 having terminal parts L1a and L2a, and connected with the switching element and the rectification element by a solder; a frame body 10 that surrounds the wiring pattern, the switching element, the rectification element and the terminal part; and a resin 200 filled in the frame body.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a power semiconductor device and a manufacturing method.

  For example, as a power semiconductor device mounted on a vehicle such as a hybrid vehicle or an electric vehicle, a semiconductor element and a wiring pattern are connected by a wire, and the wiring pattern and a terminal (for example, a DC positive terminal or a DC negative terminal) Has been proposed (for example, Patent Document 1).

JP 2013-89784 A

  In the conventional power semiconductor device, a semiconductor module including a semiconductor element, a wiring pattern, and the like is provided on a cooler, the semiconductor module is surrounded by a resin frame, and the frame is filled with an insulating resin.

  However, when joining the constituent members of the semiconductor module by soldering instead of ultrasonic joining, the frame is exposed to a high temperature environment when the solder is melted.

  That is, when joining each structural member by ultrasonic joining, the joining process could be performed after installing the frame on the cooler. However, after the frame is installed on the cooler, when the soldering of the constituent members is performed collectively by a heating furnace, the frame itself is inevitably heated to the solder melting temperature. .

  Therefore, measures such as forming the frame body with a heat-resistant resin so that the frame body is not damaged by high-temperature heat are necessary, and there is a problem that costs increase.

  The present invention has been made in view of the above problems, and provides a power semiconductor device and a manufacturing method capable of performing terminal bonding by soldering at a relatively low cost without forming a frame body from a heat resistant resin. For the purpose.

  In order to achieve the above object, a power semiconductor device according to the present invention includes a cooler, a wiring pattern disposed on the cooler, a switching element and a rectifying element connected on the wiring pattern, and a terminal portion. A plate-like lead connected to the switching element and the rectifying element; a frame surrounding the wiring pattern, the switching element, the rectifying element, and the terminal; and a resin filled in the frame The gist is to provide.

  According to the present invention, the frame body can be attached after the wiring pattern, the switching element, the rectifying element, and the plate-like lead having the terminal portion are connected by soldering, so that the frame body is not formed of a heat resistant resin. Cost reduction can be achieved.

It is sectional drawing which shows the structural example of the power semiconductor device which concerns on 1st Embodiment. It is sectional drawing (a) which shows the principal part of the power semiconductor device which concerns on 1st Embodiment, and a perspective view (b) which shows the example of the crimping nut applied to a principal part. It is sectional drawing which shows the manufacturing process of the power semiconductor device which concerns on 1st Embodiment. It is sectional drawing which shows the continuation of the manufacturing process of the power semiconductor device which concerns on 1st Embodiment. It is sectional drawing which shows the structural example of the power semiconductor device which concerns on 2nd Embodiment. It is a perspective view which shows the example of the crimping nut applied to the power semiconductor device which concerns on 2nd Embodiment. It is sectional drawing which shows the manufacturing process of the power semiconductor device which concerns on 2nd Embodiment. It is sectional drawing which shows the continuation of the manufacturing process of the power semiconductor device which concerns on 2nd Embodiment. It is a top view which shows the structural example of the frame applied to the power semiconductor device which concerns on embodiment. It is sectional drawing which shows the other example of the manufacturing process of a power semiconductor device. It is a disassembled perspective view which shows the structural example of the power semiconductor device which concerns on 3rd Embodiment. It is a perspective view which shows the principal part of the power semiconductor device which concerns on 3rd Embodiment. It is an expansion perspective view which shows the nut member applied to the power semiconductor device which concerns on 3rd Embodiment. It is a perspective view which shows the state before attaching a frame about the power semiconductor device which concerns on 3rd Embodiment. It is a perspective view which shows the state which attached the frame about the power semiconductor device which concerns on 3rd Embodiment. It is a perspective view which shows the state which filled the resin into the frame about the power semiconductor device which concerns on 3rd Embodiment. It is a perspective view which shows the state which attaches a driver board | substrate about the power semiconductor device which concerns on 3rd Embodiment.

  Hereinafter, an embodiment as an example of the present invention will be described in detail with reference to the drawings. Here, in the accompanying drawings, the same reference numerals are given to the same members, and duplicate descriptions are omitted. In addition, since description here is the best form by which this invention is implemented, this invention is not limited to the said form.

[Power Semiconductor Device According to First Embodiment]
(Configuration example)
A configuration example of the power semiconductor device M1 according to the first embodiment will be described with reference to FIG. 1 and FIG.

  Here, FIG. 1 is a cross-sectional view showing a configuration example of the power semiconductor device M1 according to the present embodiment, FIG. 2A is a cross-sectional view showing a main part of the power semiconductor device M1, and FIG. It is a perspective view which shows the example of the crimping nut 60a (60b) applied to the principal part.

  As shown in FIG. 1, a power semiconductor device M1 as an inverter device mainly includes a cooler 50, a semiconductor module structure 500A provided on the cooler 50, and a semiconductor module on the cooler 50. The resin frame 10 surrounding the structure 500 and an insulating resin 200 such as an epoxy resin filled in the frame 10 are configured.

  The cooler 50 is formed by extruding, for example, copper or aluminum. Although not shown, the cooler 50 may be formed with a flow path for circulating a coolant such as cooling water, or may be provided with fins for air cooling.

  The semiconductor module structure 500A includes a wiring pattern P composed of a metal layer (for example, a Cu layer) to which a switching element S composed of IGBT or the like and a rectifier element D composed of a diode are connected. And a first plate-like lead L1 connected to the upper terminals of the switching element S and the rectifying element D arranged on the pattern P, a second plate-like lead L2 connected to the wiring pattern P, and the like.

  The semiconductor module structure 500A is not limited to the configuration shown in FIG. 1, and may include other wiring patterns, switching elements, rectifying elements, third plate-like leads, and the like.

  Also, a terminal portion (negative electrode terminal) L1a formed on the first plate-like lead L1 is arranged on the inner side of one side (right side in the drawing) of the frame body 10, and a terminal portion formed on the second plate-like lead L2. (AC terminal) L2a is arranged inside the other side of the frame 10 (left side in the figure).

  As described above, the semiconductor module structure 500A includes the terminal portion L1a formed on the first plate-like lead L1 and the terminal portion L2a formed on the second plate-like lead L2 so as to be positioned inside the frame body 10. Therefore, the frame body 10 can be attached after each component member of the semiconductor module structure 500A is soldered in a high-temperature environment. Therefore, it is not necessary to form the frame body with a heat resistant resin, and for example, it can be molded with a relatively inexpensive resin such as PBT (polybutylene terephthalate), and the cost can be reduced.

  As shown in FIGS. 1 and 2, terminal portions L1a and L2a are provided on the lower surface side of the terminal portion L1a formed on the first plate-like lead L1 and the terminal portion L2a formed on the second plate-like lead L2. And a nut 60 that can be connected to an external terminal (not shown).

  More specifically, the nut 60 is constituted by a press-fit nut made of brass or the like having a press-fit portion 61 as shown in FIG. The press-fit nut 60 is provided with a screw hole 62 that can be screwed with a bolt (not shown) inserted from the press-fit portion 61 side.

  And as shown to Fig.2 (a), the press-fit part 61 of the press-fit nut 60 is press-fitted in the terminal parts L1a and L2a from the lower surface side using the press machine.

  The terminal portions L1a and L2a are formed with insertion holes through which bolts (not shown) are inserted, and the press-fitting nut 60 is press-fitted so that the screw holes 62 and the insertion holes are aligned.

  Further, as shown in FIG. 1, the side portion (the lower end portion in the example shown in FIG. 1) of the nut 60 is fixed by the resin 200 filled in the frame body 10.

  In this way, the nut 60 is fixed with the resin 200 and has sufficient mechanical strength even when a bolt (not shown) is screwed, so there is no need to insert-mold the nut into the frame body 10 as in the prior art. The manufacturing cost of the frame 10 can be reduced.

  Here, a stacked structure of the semiconductor module structure 500A will be described with reference to FIG.

  As shown in FIG. 1, a metal bonding pattern 72 formed on one surface (lower surface in the drawing) of the insulating layer 73 is bonded onto the cooler 50 via a bonding layer 71 such as solder.

  A wiring pattern P is formed on the other surface (the upper surface in the drawing) of the insulating layer 73. On the wiring pattern P, a rectifying element D and a switching element S are joined via solder layers 81 and 82.

  The first plate-like lead L1 is formed by bending a copper plate or the like, and has a flat plate-like connection portion L1b, an upright portion L1c, and a terminal portion L1a.

  The connection portion L1b of the first plate-like lead L1 is joined to the upper terminals of the switching element S and the rectifying element D arranged on the wiring pattern P via joining layers 83 and 84 made of solder or the like.

  The second plate-like lead L2 is formed by bending a copper plate or the like, and has a flat plate-like connection portion L2b, an upright portion L2c, and a terminal portion L2a.

  The second plate-like lead L2 is joined to the wiring pattern P via a joining layer 80 having a connecting portion L2b made of solder or the like.

  Then, the semiconductor module structure 500A having such a configuration can be soldered between the respective constituent members at once by heating to the solder melting temperature in a heating furnace and then cooling.

(Manufacturing process)
A manufacturing process of the power semiconductor device M1 according to the first embodiment will be described with reference to FIGS. 3 and 4 and FIG.

  For simplification of description, it is assumed that a power semiconductor structure 500A as shown in FIG. 3 is held on the cooler 50 in a stacked state.

  Further, the press-fitting portion 61 of the press-fitting nut 60 is press-fitted and attached to the lower surface side of the terminal portions L1a and L2a of the first plate-like lead L1 and the second plate-like lead L2.

  The power semiconductor structure 500A shown in FIG. 3 is cooled after being heated by a heating furnace or the like that can be heated to the melting temperature of the solder in order to perform solder bonding between the members. Thereby, solder joining between each member is completed.

  In such a soldering state, the frame body 10 is not yet attached, so that the frame body 10 itself is not exposed to a high temperature environment. Therefore, it is not necessary to form the frame 10 itself with a heat-resistant resin, and it can be formed with relatively inexpensive PBT (polybutylene terephthalate) or the like, and the cost of the power semiconductor device M1 as a whole can be reduced.

  Next, as shown in FIG. 4, the frame body 10 is attached to the cooler 50 provided with the power semiconductor structure 500 </ b> A while being lowered in the direction D <b> 1.

  Subsequently, the frame body 10 is filled with an insulating resin 200 such as an epoxy resin.

  As shown in FIG. 1, the resin 200 is filled up to a height at which the lower end portion of the press-fit nut 60 is filled.

  Thereby, the fabrication of the power semiconductor device M1 as shown in FIG. 1 is completed.

[Power Semiconductor Device According to Second Embodiment]
(Configuration example)
A configuration example of the power semiconductor device M2 according to the second embodiment will be described with reference to FIGS.

  Here, FIG. 5 is a cross-sectional view showing a configuration example of the power semiconductor device M2 according to the present embodiment, and FIG. 6 is a perspective view showing an example of a crimping nut 90 applied to the power semiconductor device M2.

  In addition, about the power semiconductor device M2 which concerns on 2nd Embodiment, about the structure similar to the power semiconductor device M1 which concerns on the above-mentioned 1st Embodiment, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted.

  In the power semiconductor device M2 according to the second embodiment, instead of the nut 60, a press-fit nut 90 made of brass or the like whose longitudinal dimension is longer than that of the nut 60 as shown in FIG. The press-fit nut 90 is provided with a screw hole 92 that can be screwed with a bolt (not shown) inserted from the press-fit portion 91 side.

  Then, as shown in FIG. 5, the terminal portions L1a and L2a are fixed to the lower surface side of the terminal portion L1a formed on the first plate-like lead L1 and the terminal portion L2a formed on the second plate-like lead L2. In addition, a nut 90 that can be connected to an external terminal (not shown) is attached.

  That is, as shown in FIG. 1, a press-fit portion 91 of a press-fit nut 90 is press-fitted into the terminal portions L1a and L2a from the lower surface side by a press machine or the like. The terminal portions L1a and L2a are formed with insertion holes through which bolts are inserted, and are press-fitted so that the screw holes 92 of the press-fitting nut 90 and the insertion holes are aligned.

  As shown in FIG. 5, about 2/3 of the side portion of the nut 90 is fixed by the resin 200 filled in the frame body 10.

  As a result, the nut 90 is fixed more firmly than the short nut 60 described above, so that it has sufficient mechanical strength even when a bolt (not shown) is screwed in, as in the conventional case. There is no need to insert-mold a nut in the frame body 10, and the manufacturing cost of the frame body 10 can be reduced.

(Manufacturing process)
A manufacturing process of the power semiconductor device M2 according to the second embodiment will be described with reference to FIGS. 7 and 8 and FIG.

  For simplicity of explanation, it is assumed that a power semiconductor structure 500B as shown in FIG. 5 is held on the cooler 50 in a stacked state.

  A press-fitting portion 91 of a press-fitting nut 90 is press-fitted and attached to the lower surface side of the terminal portions L1a and L2a of the first plate-like lead L1 and the second plate-like lead L2.

  Then, the power semiconductor structure 500B shown in FIG. 7 is cooled after being heated by a heating furnace or the like that can be heated to the melting temperature of the solder in order to perform solder bonding between the members. Thereby, solder joining between each member is completed.

  In such a soldering state, the frame body 10 is not yet attached, so that the frame body 10 itself is not exposed to a high temperature environment. Therefore, it is not necessary to form the frame 10 itself with a heat-resistant resin, and it can be formed with a relatively inexpensive resin, thereby reducing the cost of the entire power semiconductor device M2.

  Next, the frame body 10 is lowered and attached to the cooler 50 provided with the power semiconductor structure 500B in the direction D1.

  Subsequently, the frame body 10 is filled with an insulating resin 200 such as an epoxy resin.

  Thereby, the fabrication of the power semiconductor device M2 as shown in FIG. 5 is completed.

(About the shape of the frame)
Here, with reference to FIG. 9, a configuration example of a frame 10A applicable to the power semiconductor devices M1 and M2 according to the first and second embodiments will be described.

  The three power semiconductor devices M1 (M2) to which the frame body 10A is applied include a third plate-like lead L3 in addition to the first plate-like lead L1 and the second plate-like lead L2, and the inverter device as a whole. It is configured and used for driving a three-phase motor or the like.

  As shown in FIG. 9, terminal portions (positive electrode terminals) L1a of the first plate-like lead L1 and the third plate-like lead L3 are arranged on the inner side of the edge portion of the frame body 10A formed of PBT (polybutylene terephthalate) or the like. A notch 10a that avoids contact with L3a is formed. In addition, a notch portion 10b that avoids contact with the terminal portion L2a of the second plate-like lead L2 is formed inside the opposing edge portion.

  Also, in the drawing, notches 10c that avoid contact with the terminals 170 extending from the power semiconductor device M1 (M2) are formed inside the left and right edges of the frame 10A.

  As a result, as shown in FIGS. 4 and 7, when the frame 10 is lowered in the direction D1, the plate-like leads L1 to L3 on the power semiconductor device M1 (M2) side are formed by the notches 10a to 10c. Collision (contact) with the terminal 170 is avoided.

(Other examples of manufacturing processes of power semiconductor devices)
With reference to FIG. 10, another example of the manufacturing process of the power semiconductor device will be described.

  As described above, in the power semiconductor devices M1 and M2 according to the first and second embodiments, the terminal portion L1a formed on the first plate-like lead L1 and the terminal portion L2a formed on the second plate-like lead L2. A press-fitting nut 90 (60) is attached to the lower surface side.

  Therefore, in the state before soldering, the first plate-like lead L1 and the second plate-like lead L2 are biased to the outside by the weight of the press-fit nut 90 (60), and part of the connecting portions L1b and L2b. May float from the solder material and soldering may be impossible or insufficient.

  Therefore, as shown in FIG. 10, it is preferable that the weight 160 is placed on the connection portion L1b, or soldering is performed in a state where the support member 161 is placed below the press-fit nut 90 (60).

  However, the weight of the weight 160 may cause the molten solder material to escape in the lateral direction, and a sufficient solder thickness may not be ensured.

  In order to avoid such a situation, a convex portion 150 is provided on the wiring pattern P or a convex portion 151 is provided on the lower surface of the connection portion L1b as in the semiconductor module structure 500C shown in FIG. It is good to secure the solder thickness.

  Also, Ni balls or the like may be mixed into the solder material to ensure the solder thickness.

  The weight 160 and the support member 161 can be removed after the soldering process is completed.

[Power Semiconductor Device According to Third Embodiment]
A configuration example of a power semiconductor device M3 according to the third embodiment will be described with reference to FIGS.

  Here, FIG. 11 is an exploded perspective view showing a configuration example of the power semiconductor device M3 according to the third embodiment, FIG. 12 is a perspective view showing a main part of the power semiconductor device M3, and FIG. 13 is a power semiconductor. It is an expansion perspective view which shows the nut member 350 applied to the apparatus M3.

  In addition, about the power semiconductor device M3 which concerns on 3rd Embodiment, about the structure similar to the power semiconductor device M1 which concerns on the above-mentioned 1st Embodiment, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted.

  The power semiconductor device M3 according to the present embodiment includes a frame-shaped member 301 that positions the frame body 600, as shown in FIG.

  That is, as shown in FIG. 11, in the power semiconductor device M <b> 3, a substrate unit 250 including a bonding layer, an insulating substrate, and the like is placed on the cooler 50, and includes a switching element, a rectifying element, and the like on the substrate unit 250. A semiconductor chip 251 is placed, a frame-shaped member 301 formed of a metal such as aluminum is placed on the cooler 50, and nut members 350 and 351, which will be described later, are placed on a part of the frame-shaped member 301. Further, a plate-like lead L including a first plate-like lead, a second plate-like lead, and a third plate-like lead having terminal portions L1a to L3a is placed on the semiconductor chip 251.

  Here, as shown in FIG. 12, the frame-shaped member 301 has a bottom surface 302A at a portion where the terminal portion (negative electrode terminal) L1a of the plate-like lead L1 and the terminal portion (positive electrode terminal) L3a of the plate-like lead L3 are arranged. The plate-like lead L2 has a bottom surface 302B at a portion where the terminal portion (AC terminal) L2a is disposed, and a portion 302a of the bottom surface 302A, 302B is positioned outside the cooler 50. .

  As described above, the central portion where the heat generated from the semiconductor chip 251 is desired to be cooled is disposed on the cooler 50, and the portion close to the edge of the frame-shaped member 301 that is less necessary to be cooled is disposed outside the cooler 50. Thus, the cooler 50 can be reduced in size, and the entire power semiconductor device M3 can be reduced in size and weight.

  Further, as shown in FIGS. 11 and 13, the terminal portions L1a and L3a are fixed to a part of the bottom surface 302A of the frame-shaped member 301 via an insulating member 370 made of a ceramic plate or the like, and an external not shown. A nut member 350 including two nuts 360 that can be connected to the terminals is provided. A solder material 380 is disposed between the insulating member 370 and the bottom surface 302A and between the insulating member 370 and the nut 360.

  As shown in FIG. 11, a terminal portion L2a is fixed to a part of the bottom surface 302B of the frame-shaped member 301 via an insulating member 370 that is also formed of a ceramic plate or the like, and connected to an external terminal (not shown). A nut member 351 consisting of one possible nut 360 is provided.

  By using the nut members 350 and 351 having such a configuration, the terminal portions L1a to L3a are electrically insulated from the metal cooler 50 and the frame-shaped member 301, and are connected to the nut 360 via bolts (not shown). Can be fixed.

  And in the state which mounted and laminated | stacked each structural member as shown in FIG. 11, after putting the whole into a heating furnace and heating to solder melting temperature, it cools, and between each structural member collectively. Soldering can be performed.

  Note that, in such a state where solder bonding is performed, the frame 600 is not yet attached, so that the frame 600 itself is not exposed to a high temperature environment. Therefore, it is not necessary to form the frame 600 itself with a heat-resistant resin, and it can be formed with relatively inexpensive PBT (polybutylene terephthalate) or the like, and the cost of the power semiconductor device M3 as a whole can be reduced.

  Here, FIG. 14 is a perspective view showing a state before the frame body 600 is attached to the power semiconductor device M3, FIG. 15 is a perspective view showing a state where the frame body 600 is attached, and FIG. FIG. 17 is a perspective view showing a state in which the driver board 800 is attached.

  By performing soldering collectively as described above, a structure 550 as shown in FIG. 14 is produced.

  Thereafter, as shown in FIG. 15, the frame body 600 is attached from above the structure 550 shown in FIG.

  Note that the frame 600 has substantially the same shape as the frame 10A shown in FIG.

  That is, a cutout that avoids contact with the terminal portions L1a and L3b of the first plate-like lead L1 and the third plate-like lead L3 is provided on the inner side of the edge portion of the frame body 600 formed of PBT (polybutylene terephthalate) or the like. A portion 600a is formed. Further, a notch portion 600b that avoids contact with the terminal portion L2a of the second plate-like lead L2 is formed inside the opposite edge portion.

  Thus, when the frame body 600 is attached to the structure 550, collision (contact) with the plate-like leads L1 to L3 is avoided by the notches 600a and 600b.

  The frame 600 is provided with a large number of connection pins 650 that are electrically connected to a driver board 800 described later. The connection pin 650 is electrically connected to the switching element S, the rectifying element D, the wiring pattern P, and the like via a connector (not shown).

  In addition, mounting screw holes 601 are provided at the corners of the frame body 600 and the like.

  After the frame body 600 is attached to the structure 550, as shown in FIG. 16, the frame body 600 is filled with an insulating resin 200 such as an epoxy resin.

  Then, as shown in FIG. 17, the driver board 800 is attached from above in alignment with the connection pins 650 and the screw holes 601 of the frame 600.

  The driver board 800 is provided with a connection hole 801 corresponding to the connection pin 650 of the frame body 600 and an attachment hole 802 corresponding to the screw hole 601.

  In this way, the power semiconductor device M3 according to the third embodiment is manufactured.

  Although the invention made by the present inventor has been specifically described based on the embodiments, the embodiments disclosed herein are illustrative in all respects and are not limited to the disclosed technology. Should not be considered. That is, the technical scope of the present invention should not be construed restrictively based on the description in the above embodiment, but should be construed according to the description of the scope of claims. All the modifications within the scope of the claims and the equivalent technique to the described technique are included.

  For example, the wiring pattern P and the switching element S, the rectifying element D, and the connection portions L1b and L2b may be joined using a conductive sintered material instead of soldering using a solder material. Good.

M1 to M3 Power semiconductor device 10, 10A, 600 Frame 10a to 10c Notch 50 Cooler 60, 90 Press-fit nut (nut)
DESCRIPTION OF SYMBOLS 61 ... Press-fit part 62 ... Screw hole 71 ... Joining layer 72 ... Joining pattern 73 ... Insulating layer 83, 84 ... Joining layer 200 ... Resin 250 ... Substrate part 251 ... Semiconductor chip 301 ... Frame-like member 302A, 302B ... Bottom face 350,351 ... nut member 360 ... nut 370 ... insulating member 380 ... solder material 500A to 500C ... power semiconductor structure D ... rectifying element L1 ... first plate-like lead L2 ... second plate-like lead L3 ... third plate-like lead L1b, L2b ... connection part L1a ... terminal part (negative electrode terminal)
L2a ... Terminal part (AC terminal)
L3a ... Terminal part (positive terminal)
L1c, L2c ... Standing part S ... Switching element P ... Wiring pattern

Claims (7)

A cooler (50);
A wiring pattern (P) disposed on the cooler;
A switching element (S) and a rectifying element (D) connected on the wiring pattern;
Plate-shaped leads (L1, L2) having terminal portions (L1a, L2a) and connected to the switching element and the rectifying element;
A frame (10) surrounding the wiring pattern, the switching element, the rectifying element and the terminal portion;
A resin (200) filled in the frame;
A power semiconductor device comprising: On the lower surface side of the terminal part, nuts (60, 90) that fix the terminal part and connect to an external terminal are provided,
The power semiconductor device according to claim 1, wherein a side portion of the nut is fixed by the resin. The nut is composed of a press-fit nut (60, 90) having a press-fit portion (61, 91),
The power semiconductor device according to claim 2, wherein the press-fitting portion of the nut is press-fitted into the terminal portion from the lower surface side. A frame-like member (301) for positioning the frame body;
The said frame-shaped member has a bottom face (302A, 302B) in the part where the said terminal part is arrange | positioned, and a part of the said bottom face is located outside the said cooler. Power semiconductor device. The frame member is made of metal,
On the bottom surface of the frame-shaped member, nut members (350, 351) having nuts (360) that fix the terminal portions via insulating members (370) and can be connected to external terminals are provided. The power semiconductor device according to claim 4. Forming a wiring pattern (P) on the cooler (50);
Soldering the switching element (S) and the rectifying element (D) on the wiring pattern;
Soldering terminal portions (L1a, L2a) of plate-like leads (L1, L2) to the switching element and the rectifying element and solder;
Attaching the frame (10) surrounding the wiring pattern, the switching element, the rectifying element and the terminal portion;
Filling the frame with resin (200);
A method for manufacturing a power semiconductor device, comprising:   The method for manufacturing a power semiconductor device according to claim 6, further comprising a step of press-fitting a press-fitting portion (61, 91) of a press-fitting nut (60, 90) from the lower surface side of the terminal portion.

Images