JP2017022409A5 - - Google Patents

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JP2017022409A5
JP2017022409A5 JP2016196315A JP2016196315A JP2017022409A5 JP 2017022409 A5 JP2017022409 A5 JP 2017022409A5 JP 2016196315 A JP2016196315 A JP 2016196315A JP 2016196315 A JP2016196315 A JP 2016196315A JP 2017022409 A5 JP2017022409 A5 JP 2017022409A5
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substrate
liquid
removal
solidified
processing
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実施形態の一態様に係る基板処理方法は、処理液供給工程と、収容工程と、取出工程と、除去工程とを含む。処理液供給工程は、内部に形成される金属配線の少なくとも一部が露出したドライエッチング後またはアッシング後であって反応生成物が付着した基板に対し、揮発成分を含み基板上に膜を形成するための処理液を供給する。収容工程は、揮発成分が揮発することによって処理液が固化または硬化した基板を搬送容器へ収容する。取出工程は、搬送容器に収容された処理液供給工程後の基板を取り出す。除去工程は、取出工程後、固化または硬化した処理液を基板から除去する。また、除去工程は、固化または硬化した処理液に対して該処理液を除去する除去液を供給することにより、固化または硬化した処理液とともに反応生成物を基板から除去する。 The substrate processing method which concerns on the one aspect | mode of embodiment contains a process liquid supply process, the accommodation process, the extraction process, and the removal process . In the treatment liquid supply process, a film containing a volatile component is formed on the substrate after the dry etching or ashing in which at least a part of the metal wiring formed therein is exposed and the reaction product is attached. The processing liquid for supplying is supplied. In the storing step, the substrate in which the processing liquid is solidified or hardened by volatilization of the volatile component is stored in the transport container. In the extraction step, the substrate after the processing liquid supply step accommodated in the transfer container is extracted. In the removing step, the solidified or hardened processing liquid is removed from the substrate after the removing step. Further, in the removing step, the reaction product is removed from the substrate together with the solidified or hardened processing liquid by supplying a removing liquid for removing the processing liquid to the solidified or hardened processing liquid.

Claims (11)

内部に形成される金属配線の少なくとも一部が露出したドライエッチング後またはアッシング後であって反応生成物が付着した基板に対し、揮発成分を含み基板上に膜を形成するための処理液を供給する処理液供給工程と、
前記揮発成分が揮発することによって前記処理液が固化または硬化した基板を搬送容器へ収容する収容工程と
前記搬送容器に収容された前記処理液供給工程後の基板を取り出す取出工程と、
前記取出工程後、固化または硬化した前記処理液を前記基板から除去する除去工程と
を含み、
前記除去工程は、
固化または硬化した前記処理液に対して該処理液を除去する除去液を供給することにより、固化または硬化した前記処理液とともに前記反応生成物を前記基板から除去する
ことを特徴とする基板処理方法。
Supply processing liquid to form a film on the substrate containing volatile components to the substrate to which reaction products have adhered after dry etching or ashing where at least part of the metal wiring formed inside is exposed A processing liquid supply step to perform,
An accommodating step of accommodating the substrate in which the processing liquid is solidified or cured by volatilization of the volatile component in a transport container ;
An extraction step of taking out the substrate after the treatment liquid supply step accommodated in the transfer container;
After the removal step, seen including a removal step of removing the solidified or cured the processing liquid from the substrate,
The removal step includes
A substrate processing method, wherein the reaction product is removed from the substrate together with the solidified or hardened processing liquid by supplying a removing liquid for removing the processing liquid to the solidified or hardened processing liquid. .
前記収容工程において、前記反応生成物は基板から引き離された状態で前記金属配線を覆っている前記処理液に含まれていることIn the accommodating step, the reaction product is contained in the processing liquid covering the metal wiring in a state of being separated from the substrate.
を特徴とする請求項1に記載の基板処理方法。The substrate processing method according to claim 1.
前記処理液供給工程に先立ち、前記反応生成物を除去し易くするための薬液処理を行う前処理工程Prior to the treatment liquid supply step, a pretreatment step for performing a chemical treatment for facilitating removal of the reaction product.
を含むことを特徴とする請求項1または2に記載の基板処理方法。The substrate processing method according to claim 1, further comprising:
前記除去工程後の基板に対して、残存する前記反応生成物を除去するための薬液処理を行う後処理工程  A post-processing step of performing a chemical treatment for removing the remaining reaction product on the substrate after the removing step
を含むことを特徴とする請求項1〜3のいずれか一つに記載の基板処理方法。The substrate processing method according to claim 1, comprising:
前記処理液供給工程前の基板に対してドライエッチングを行って、該基板の内部に形成Perform dry etching on the substrate before the process liquid supply step to form inside the substrate
される金属配線の少なくとも一部を露出させるドライエッチング工程と、A dry etching step of exposing at least a part of the metal wiring to be performed;
前記ドライエッチング工程後、前記処理液供給工程が開始されるまで前記基板を外気かAfter the dry etching process, the substrate is kept outside until the process liquid supply process is started.
ら遮断する外気遮断工程とAnd the outside air blocking process
を含むことを特徴とする請求項1〜4のいずれか一つに記載の基板処理方法。The substrate processing method according to claim 1, further comprising:
複数の基板を収容可能な搬送容器を載置する載置部と、
内部に形成される金属配線の少なくとも一部が露出したドライエッチング後またはアッシング後であって反応生成物が付着した基板に対し、揮発成分を含み基板上に膜を形成するための処理液を供給する処理液供給部と、
前記揮発成分が揮発することによって前記処理液が固化または硬化した基板を前記載置部へ搬送して、前記載置部に載置された前記搬送容器へ収容する第1基板搬送装置と
前記搬送容器に収容された基板を取り出す第2基板搬送装置と、
前記第2基板搬送装置により取り出された基板から、固化または硬化した前記処理液を除去するための除去液を供給する除去液供給部と
を備え、
前記除去液供給部は、
固化または硬化した前記処理液に対して該処理液を除去する除去液を供給することにより、固化または硬化した前記処理液とともに前記反応生成物を前記基板から除去する除去液を供給する
ことを特徴とする基板処理システム。
A placement unit for placing a transport container capable of accommodating a plurality of substrates; and
Supply processing liquid to form a film on the substrate containing volatile components to the substrate to which reaction products have adhered after dry etching or ashing where at least part of the metal wiring formed inside is exposed A processing liquid supply unit
A first substrate transport device that transports the substrate on which the processing liquid is solidified or hardened by volatilization of the volatile component to the placement unit, and stores the substrate in the transport container placed on the placement unit ;
A second substrate transfer device for taking out the substrate accommodated in the transfer container;
A removal liquid supply unit for supplying a removal liquid for removing the solidified or hardened processing liquid from the substrate taken out by the second substrate transfer device;
With
The removal liquid supply unit includes:
A removal liquid that removes the reaction product from the substrate is supplied together with the solidified or cured treatment liquid by supplying a removal liquid that removes the treatment liquid to the solidified or cured treatment liquid. Substrate processing system.
前記搬送容器に収容された基板において、前記反応生成物は基板から引き離された状態で前記金属配線を覆っている前記処理液に含まれていることIn the substrate accommodated in the transfer container, the reaction product is contained in the processing liquid covering the metal wiring in a state of being separated from the substrate.
を特徴とする請求項6に記載の基板処理システム。The substrate processing system according to claim 6.
前記処理液供給部による処理液の供給に先立ち、前記反応生成物を除去し易くするための薬液を供給する第1薬液供給部Prior to the supply of the treatment liquid by the treatment liquid supply unit, a first chemical solution supply unit that supplies a chemical solution for facilitating removal of the reaction product.
を備えることを特徴とする請求項6または7に記載の基板処理システム。The substrate processing system according to claim 6, further comprising:
前記除去液供給部により供給された除去液により処理された基板に対して、残存する前記反応生成物を除去するための薬液を供給する第2薬液供給部A second chemical solution supply unit that supplies a chemical solution for removing the remaining reaction product to the substrate processed by the removal solution supplied by the removal solution supply unit
を備えることを特徴とする請求項6〜8のいずれか一つに記載の基板処理システム。The substrate processing system according to claim 6, further comprising:
前記基板に対してドライエッチングを行って、該基板の内部に形成される金属配線の少なくとも一部を露出させるドライエッチング部と、A dry etching portion that performs dry etching on the substrate and exposes at least part of the metal wiring formed in the substrate;
前記載置部、前記第1、第2基板搬送装置および前記ドライエッチング部を含む第1ブロックと、A first block including the placement unit, the first and second substrate transfer devices, and the dry etching unit;
前記処理液供給部を含む第2ブロックと、A second block including the processing liquid supply unit;
大気から遮断された内部空間を有し、前記第1ブロックと前記第2ブロックとを連結する連結部とA connecting portion having an internal space cut off from the atmosphere and connecting the first block and the second block;
を備えることを特徴とする請求項6〜9のいずれか一つに記載の基板処理システム。The substrate processing system according to claim 6, further comprising:
コンピュータ上で動作し、基板処理システムを制御するプログラムが記憶されたコンピュータ読取可能な記憶媒体であって、
前記プログラムは、実行時に、請求項1〜5のいずれか一つに記載の基板処理方法が行われるように、コンピュータに前記基板処理システムを制御させること
を特徴とする記憶媒体。
A computer-readable storage medium that operates on a computer and stores a program for controlling the substrate processing system,
A storage medium characterized by causing the computer to control the substrate processing system so that the substrate processing method according to any one of claims 1 to 5 is performed when the program is executed.
JP2016196315A 2013-08-27 2016-10-04 Substrate processing method, substrate processing system, and storage medium Active JP6142059B2 (en)

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