JP2017022409A5 - - Google Patents
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- JP2017022409A5 JP2017022409A5 JP2016196315A JP2016196315A JP2017022409A5 JP 2017022409 A5 JP2017022409 A5 JP 2017022409A5 JP 2016196315 A JP2016196315 A JP 2016196315A JP 2016196315 A JP2016196315 A JP 2016196315A JP 2017022409 A5 JP2017022409 A5 JP 2017022409A5
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- substrate
- liquid
- removal
- solidified
- processing
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- 239000000758 substrate Substances 0.000 claims description 47
- 239000007788 liquid Substances 0.000 claims description 39
- 239000007795 chemical reaction product Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 238000003672 processing method Methods 0.000 claims description 7
- 238000004380 ashing Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 6
- 230000032258 transport Effects 0.000 claims 5
- 230000000903 blocking Effects 0.000 claims 1
- 230000004308 accommodation Effects 0.000 description 1
Description
実施形態の一態様に係る基板処理方法は、処理液供給工程と、収容工程と、取出工程と、除去工程とを含む。処理液供給工程は、内部に形成される金属配線の少なくとも一部が露出したドライエッチング後またはアッシング後であって反応生成物が付着した基板に対し、揮発成分を含み基板上に膜を形成するための処理液を供給する。収容工程は、揮発成分が揮発することによって処理液が固化または硬化した基板を搬送容器へ収容する。取出工程は、搬送容器に収容された処理液供給工程後の基板を取り出す。除去工程は、取出工程後、固化または硬化した処理液を基板から除去する。また、除去工程は、固化または硬化した処理液に対して該処理液を除去する除去液を供給することにより、固化または硬化した処理液とともに反応生成物を基板から除去する。 The substrate processing method which concerns on the one aspect | mode of embodiment contains a process liquid supply process, the accommodation process, the extraction process, and the removal process . In the treatment liquid supply process, a film containing a volatile component is formed on the substrate after the dry etching or ashing in which at least a part of the metal wiring formed therein is exposed and the reaction product is attached. The processing liquid for supplying is supplied. In the storing step, the substrate in which the processing liquid is solidified or hardened by volatilization of the volatile component is stored in the transport container. In the extraction step, the substrate after the processing liquid supply step accommodated in the transfer container is extracted. In the removing step, the solidified or hardened processing liquid is removed from the substrate after the removing step. Further, in the removing step, the reaction product is removed from the substrate together with the solidified or hardened processing liquid by supplying a removing liquid for removing the processing liquid to the solidified or hardened processing liquid.
Claims (11)
前記揮発成分が揮発することによって前記処理液が固化または硬化した基板を搬送容器へ収容する収容工程と、
前記搬送容器に収容された前記処理液供給工程後の基板を取り出す取出工程と、
前記取出工程後、固化または硬化した前記処理液を前記基板から除去する除去工程と
を含み、
前記除去工程は、
固化または硬化した前記処理液に対して該処理液を除去する除去液を供給することにより、固化または硬化した前記処理液とともに前記反応生成物を前記基板から除去する
ことを特徴とする基板処理方法。 Supply processing liquid to form a film on the substrate containing volatile components to the substrate to which reaction products have adhered after dry etching or ashing where at least part of the metal wiring formed inside is exposed A processing liquid supply step to perform,
An accommodating step of accommodating the substrate in which the processing liquid is solidified or cured by volatilization of the volatile component in a transport container ;
An extraction step of taking out the substrate after the treatment liquid supply step accommodated in the transfer container;
After the removal step, seen including a removal step of removing the solidified or cured the processing liquid from the substrate,
The removal step includes
A substrate processing method, wherein the reaction product is removed from the substrate together with the solidified or hardened processing liquid by supplying a removing liquid for removing the processing liquid to the solidified or hardened processing liquid. .
を特徴とする請求項1に記載の基板処理方法。The substrate processing method according to claim 1.
を含むことを特徴とする請求項1または2に記載の基板処理方法。The substrate processing method according to claim 1, further comprising:
を含むことを特徴とする請求項1〜3のいずれか一つに記載の基板処理方法。The substrate processing method according to claim 1, comprising:
される金属配線の少なくとも一部を露出させるドライエッチング工程と、A dry etching step of exposing at least a part of the metal wiring to be performed;
前記ドライエッチング工程後、前記処理液供給工程が開始されるまで前記基板を外気かAfter the dry etching process, the substrate is kept outside until the process liquid supply process is started.
ら遮断する外気遮断工程とAnd the outside air blocking process
を含むことを特徴とする請求項1〜4のいずれか一つに記載の基板処理方法。The substrate processing method according to claim 1, further comprising:
内部に形成される金属配線の少なくとも一部が露出したドライエッチング後またはアッシング後であって反応生成物が付着した基板に対し、揮発成分を含み基板上に膜を形成するための処理液を供給する処理液供給部と、
前記揮発成分が揮発することによって前記処理液が固化または硬化した基板を前記載置部へ搬送して、前記載置部に載置された前記搬送容器へ収容する第1基板搬送装置と、
前記搬送容器に収容された基板を取り出す第2基板搬送装置と、
前記第2基板搬送装置により取り出された基板から、固化または硬化した前記処理液を除去するための除去液を供給する除去液供給部と
を備え、
前記除去液供給部は、
固化または硬化した前記処理液に対して該処理液を除去する除去液を供給することにより、固化または硬化した前記処理液とともに前記反応生成物を前記基板から除去する除去液を供給する
ことを特徴とする基板処理システム。 A placement unit for placing a transport container capable of accommodating a plurality of substrates; and
Supply processing liquid to form a film on the substrate containing volatile components to the substrate to which reaction products have adhered after dry etching or ashing where at least part of the metal wiring formed inside is exposed A processing liquid supply unit
A first substrate transport device that transports the substrate on which the processing liquid is solidified or hardened by volatilization of the volatile component to the placement unit, and stores the substrate in the transport container placed on the placement unit ;
A second substrate transfer device for taking out the substrate accommodated in the transfer container;
A removal liquid supply unit for supplying a removal liquid for removing the solidified or hardened processing liquid from the substrate taken out by the second substrate transfer device;
With
The removal liquid supply unit includes:
A removal liquid that removes the reaction product from the substrate is supplied together with the solidified or cured treatment liquid by supplying a removal liquid that removes the treatment liquid to the solidified or cured treatment liquid. Substrate processing system.
を特徴とする請求項6に記載の基板処理システム。The substrate processing system according to claim 6.
を備えることを特徴とする請求項6または7に記載の基板処理システム。The substrate processing system according to claim 6, further comprising:
を備えることを特徴とする請求項6〜8のいずれか一つに記載の基板処理システム。The substrate processing system according to claim 6, further comprising:
前記載置部、前記第1、第2基板搬送装置および前記ドライエッチング部を含む第1ブロックと、A first block including the placement unit, the first and second substrate transfer devices, and the dry etching unit;
前記処理液供給部を含む第2ブロックと、A second block including the processing liquid supply unit;
大気から遮断された内部空間を有し、前記第1ブロックと前記第2ブロックとを連結する連結部とA connecting portion having an internal space cut off from the atmosphere and connecting the first block and the second block;
を備えることを特徴とする請求項6〜9のいずれか一つに記載の基板処理システム。The substrate processing system according to claim 6, further comprising:
前記プログラムは、実行時に、請求項1〜5のいずれか一つに記載の基板処理方法が行われるように、コンピュータに前記基板処理システムを制御させること
を特徴とする記憶媒体。 A computer-readable storage medium that operates on a computer and stores a program for controlling the substrate processing system,
A storage medium characterized by causing the computer to control the substrate processing system so that the substrate processing method according to any one of claims 1 to 5 is performed when the program is executed.
Applications Claiming Priority (2)
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JP2013176086 | 2013-08-27 | ||
JP2013176086 | 2013-08-27 |
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JP2014021710A Division JP6022490B2 (en) | 2013-08-27 | 2014-02-06 | Substrate processing method, substrate processing system, and storage medium |
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JP2017022409A JP2017022409A (en) | 2017-01-26 |
JP2017022409A5 true JP2017022409A5 (en) | 2017-03-02 |
JP6142059B2 JP6142059B2 (en) | 2017-06-07 |
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JP2016196315A Active JP6142059B2 (en) | 2013-08-27 | 2016-10-04 | Substrate processing method, substrate processing system, and storage medium |
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JP6945320B2 (en) * | 2016-05-25 | 2021-10-06 | 東京エレクトロン株式会社 | Substrate cleaning method, substrate cleaning system and storage medium |
JP6672091B2 (en) * | 2016-06-24 | 2020-03-25 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
JP6818484B2 (en) * | 2016-09-26 | 2021-01-20 | 株式会社Screenホールディングス | Substrate cleaning method, substrate cleaning recipe creation method, and substrate cleaning recipe creation device |
US10504741B2 (en) | 2017-02-28 | 2019-12-10 | Tokyo Electron Limited | Semiconductor manufacturing method and plasma processing apparatus |
JP6742287B2 (en) | 2017-02-28 | 2020-08-19 | 東京エレクトロン株式会社 | Semiconductor manufacturing method and plasma processing apparatus |
JP6807775B2 (en) | 2017-02-28 | 2021-01-06 | 東京エレクトロン株式会社 | Film formation method and plasma processing equipment |
JP6932017B2 (en) * | 2017-03-27 | 2021-09-08 | 株式会社Screenホールディングス | Substrate processing equipment and substrate processing method |
KR102498810B1 (en) * | 2017-04-13 | 2023-02-10 | 제이에스알 가부시끼가이샤 | Composition for cleaning semiconductor substrates |
JP6917807B2 (en) * | 2017-07-03 | 2021-08-11 | 東京エレクトロン株式会社 | Substrate processing method |
JP6993806B2 (en) * | 2017-07-31 | 2022-01-14 | 株式会社Screenホールディングス | Board processing method and board processing equipment |
JP7227757B2 (en) | 2018-05-31 | 2023-02-22 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
JP7227758B2 (en) | 2018-05-31 | 2023-02-22 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
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