KR102340204B1 - Substrate cleaning method, substrate cleaning system and recording medium - Google Patents

Abstract

This is to remove unnecessary substances adhering to the substrate without affecting the surface of the substrate made of a material that dissolves or corrodes in response to water. The substrate cleaning method according to the embodiment includes a film forming treatment liquid supply step, a peeling treatment liquid supply step, and a dissolution treatment liquid supply step. In the film forming treatment liquid supply step, a film forming treatment liquid containing a volatile component and for forming a film on the substrate is supplied to the substrate. In the release treatment liquid supply step, a release treatment liquid for peeling the treatment film from the substrate is supplied to the treatment film in which the film-forming treatment liquid is solidified or cured on the substrate by volatilization of the volatile component. In the dissolution treatment liquid supply step, a dissolution treatment solution for dissolving the treatment film is supplied to the treatment film after the peel treatment liquid supply step. Here, the film forming treatment liquid contains a polar organic substance, the peeling treatment liquid is a non-polar solvent not containing water, and the dissolution treatment liquid is a polar solvent not containing water.

Description

Substrate cleaning method, substrate cleaning system and storage medium

The disclosed embodiments relate to a substrate cleaning method, a substrate cleaning system, and a storage medium.

BACKGROUND ART A substrate cleaning apparatus for removing particles adhering to a substrate such as a silicon wafer or a compound semiconductor wafer is known. In the substrate cleaning method disclosed in Patent Document 1, a film forming treatment liquid for forming a film on the substrate is supplied to the substrate, and the volatile component is volatilized so that the film forming treatment liquid is solidified or cured on the substrate. In contrast, by supplying a peeling treatment liquid for peeling the treatment film from the substrate, and then supplying a dissolving treatment liquid for dissolving the treatment film to the treatment film, unnecessary substances with small particle diameters adhered to the substrate without affecting the surface of the substrate (不要物) is being removed.

Japanese Patent Laid-Open No. 2015-119164

However, the substrate cleaning method of Patent Document 1 uses a peeling treatment liquid and a dissolving treatment liquid containing moisture, and a substrate made of a material such as Ge (germanium) or III-V group that may be dissolved in response to water. cannot be applied to Further, it cannot be applied to a substrate made of a metal material for a magnetoresistive memory that may be corroded in response to water.

One aspect of the embodiment provides a substrate cleaning method, a substrate cleaning system, and a storage medium capable of removing unnecessary substances adhering to the substrate without affecting the surface of the substrate made of a material that reacts with water to dissolve or corrode intended to provide

A substrate cleaning method according to an aspect of the embodiment includes a film forming treatment liquid supplying step of supplying a film forming treatment liquid containing a volatile component and for forming a film on the substrate to the substrate, and the film forming treatment liquid by volatilizing the volatile component A peeling treatment solution supplying step of supplying a peeling treatment solution for peeling the treatment film from the substrate to the treatment film solidified or cured on the substrate, and after the peeling treatment solution supply step, the treatment film is a dissolution treatment solution supply step of supplying a dissolution treatment solution to be dissolved, wherein the stripping treatment solution used in the peeling treatment solution supply step is a non-polar solvent that does not contain water, and is used in the dissolution treatment solution supply step The dissolution treatment liquid is a polar solvent that does not contain water.

In one aspect of the embodiment, unnecessary substances adhering to the substrate can be removed without affecting the surface of the substrate made of a material that reacts with water to dissolve or corrode.

1A is an explanatory diagram of a substrate cleaning method according to the first embodiment.
1B is an explanatory diagram of a substrate cleaning method according to the first embodiment.
1C is an explanatory diagram of a substrate cleaning method according to the first embodiment.
1D is an explanatory diagram of a substrate cleaning method according to the first embodiment.
1E is an explanatory diagram of a substrate cleaning method according to the first embodiment.
2 is a schematic diagram showing the configuration of the substrate cleaning system according to the first embodiment.
3 is a schematic diagram showing the configuration of the substrate cleaning apparatus according to the first embodiment.
4 is a flowchart showing a processing procedure of a substrate cleaning process performed by the substrate cleaning apparatus according to the first embodiment.
5A is an operation explanatory diagram of the first substrate cleaning apparatus.
5B is an operation explanatory diagram of the first substrate cleaning apparatus.
5C is an operation explanatory diagram of the first substrate cleaning apparatus.
5D is an operation explanatory diagram of the first substrate cleaning apparatus.
6 is a schematic diagram showing the configuration of a wafer according to the second embodiment.
7A is an explanatory diagram of a substrate cleaning method according to the second embodiment.
7B is an explanatory diagram of a substrate cleaning method according to the second embodiment.
7C is an explanatory diagram of a substrate cleaning method according to the second embodiment.
7D is an explanatory diagram of a substrate cleaning method according to the second embodiment.
7E is an explanatory diagram of a substrate cleaning method according to the second embodiment.
8 is a schematic diagram showing a schematic configuration of a substrate cleaning system according to a second embodiment.
It is a schematic diagram which shows the schematic structure of the 1st processing apparatus which concerns on 2nd Embodiment.
10 is a schematic diagram showing an example of the configuration of the dry etching unit according to the second embodiment.
11 is a schematic diagram showing an example of the configuration of a first liquid processing unit according to the second embodiment.
12 is a flowchart showing a processing procedure of substrate cleaning according to the second embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a substrate cleaning method, a substrate cleaning system, and a storage medium disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)

<Contents of substrate cleaning method>

First, the contents of the substrate cleaning method according to the first embodiment will be described with reference to Figs. 1A to 1E. 1A to 1E are explanatory views of a substrate cleaning method according to the first embodiment.

As shown in Fig. 1A, in the substrate cleaning method according to the first embodiment, volatile components are added to the patterned surface of a substrate such as a silicon wafer or a compound semiconductor wafer (hereinafter referred to as "wafer W"). and a processing liquid for forming a film on the wafer W (hereinafter, referred to as a 'film forming processing liquid') is supplied.

The film-forming processing liquid supplied to the pattern formation surface of the wafer W is solidified or hardened to become a processing film while causing volumetric shrinkage due to volatilization of volatile components. As a result, the pattern formed on the wafer W and the particles P adhering to the pattern are covered with the process film (refer to FIG. 1B ). In addition, "solidification" as used herein means solidification, and "curing" means that molecules are connected to each other and polymerized (eg, crosslinking or polymerization, etc.).

Then, as shown in FIG. 1B , a peeling treatment liquid is supplied to the treatment film on the wafer W. As shown in FIG. The peeling treatment liquid is a treatment liquid for peeling the above-described treatment film from the wafer W.

Specifically, after being supplied on the process film, it penetrates into the process film and reaches the interface of the wafer W. The peeling treatment liquid that has reached the interface of the wafer W permeates into the pattern formation surface that is the interface of the wafer W.

As described above, when the peeling treatment liquid penetrates between the wafer W and the treatment film, the treatment film is peeled from the wafer W in a 'film' state, and with this, the particles P adhering to the pattern formation surface are released. It is peeled from the wafer W together with a process film (refer FIG. 1C).

In addition, the film-forming treatment liquid can separate the particles P adhering to the pattern or the like from the pattern or the like due to the deformation (tensile force) generated by the volume contraction accompanying the volatilization of the volatile component.

Next, a dissolution treatment solution for dissolving the treatment film is supplied to the treatment film peeled from the wafer W. Thereby, the treatment film is dissolved, and the particles P contained in the treatment film are in a state of being suspended in the dissolution treatment liquid (refer to FIG. 1D ). Thereafter, the particles P are removed from the wafer W by washing the dissolved treatment liquid and the dissolved treatment film with pure water or the like (see FIG. 1E ).

As described above, in the substrate cleaning method according to the first embodiment, the processing film formed on the wafer W is peeled from the wafer W in a 'film' state, thereby removing particles P adhering to the pattern or the like together with the processing film. It was decided to remove from the wafer W.

Therefore, according to the substrate cleaning method according to the first embodiment, since particles are removed without using a chemical action, it is possible to suppress the erosion of the underlying film due to the etching action or the like.

Further, according to the substrate cleaning method according to the first embodiment, since the particles P can be removed with a weak force compared to the conventional substrate cleaning method using physical force, pattern collapse can be suppressed.

Further, according to the substrate cleaning method according to the first embodiment, it becomes possible to easily remove particles P having a small particle diameter, which were difficult to remove in the conventional substrate cleaning method using physical force.

Further, in the substrate cleaning method according to the first embodiment, after the processing film is formed on the wafer W, all of the processing film is removed from the wafer W without performing pattern exposure. Therefore, the wafer W after cleaning is in the state before the film-forming processing liquid is applied, that is, the state in which the pattern formation surface is exposed.

In the first embodiment, a top coat liquid is used as the film-forming treatment liquid. The top coat film in which the top coat liquid is solidified or cured is a protective film applied to the upper surface of the resist to prevent the immersion liquid from entering the resist.

In addition, an immersion liquid is a liquid used for immersion exposure in a lithography process, for example. In addition, the top coat solution contains an acrylic resin having a property of shrinking in volume when solidified or cured.

Thereby, since volumetric shrinkage occurs not only due to volatilization of the volatile component but also due to curing shrinkage of the acrylic resin, the volumetric shrinkage rate is large compared to the film forming treatment solution containing only the volatile component, so that the particles P can be strongly separated.

In particular, since an acrylic resin has a large volume shrinkage rate compared to other resins such as an epoxy resin, the top coat solution is effective in terms of imparting a tensile force to the particles (P). In addition, it is not necessary to use the top coat liquid itself used in the lithography process, and in order to improve the tensile force due to volumetric shrinkage or peeling performance from the substrate, a liquid in which another chemical is added to the top coat liquid used in the lithography process may be used. do.

In Patent Document 1, DIW is used as a peeling treatment liquid and an aqueous alkali solution is used as a dissolution treatment liquid. However, depending on the material forming the surface of the wafer W, the processing liquid containing water cannot be used. Such a material includes, for example, Ge or group III-V, and this type of material reacts with water and dissolves. There are also metal materials for magnetoresistive memories such as MRAM, PCRAM, and ReRAM, and this type of material also reacts with water to corrode.

In the first embodiment, instead of the water-containing solvent, an organic solvent that does not contain water and does not cause a reaction such as dissolution or corrosion with respect to the wafer W made of the above-described material is used. In addition, since the top coat film on the wafer W is composed of an acrylic resin, which is a polar organic substance, a non-polar solvent that does not dissolve the top coat film is used as the peeling treatment liquid, and a polar solvent that dissolves the top coat film is used as the dissolution treatment liquid.

In addition, in general, a polar material easily dissolves a polar material, a non-polar material easily dissolves a non-polar material, and a polar material and a non-polar material are difficult to dissolve in each other. In addition, since the treatment liquid of the non-polar material has good wettability regardless of the surface state, even if the surface of the wafer W is hydrophobic, it is possible to agglomerate at the interface between the surface and the film to peel the film.

Specifically, as the stripping treatment liquid, for example, at least one of fluorine-based solvents such as nonpolar solvents such as HFE (hydrofluoroether), HFC (hydrofluorocarbon), HFO (hydrofluoroolefin), and PFC (perfluorocarbon). Dog solvents can be used.

Moreover, as a dissolution treatment liquid, for example, alcohols (eg, IPA), which are polar solvents, PGME (propylene glycol monomethyl ether), PGMEA (propylene glycol monomethyl ether acetate), MIBC (4-methyl-2-pentane) All), etc., at least one solvent may be used.

As mentioned above, although it is not limited, by using the peeling process liquid and dissolution process liquid which consist of these solvents, the cleaning process can be performed without affecting the surface of the wafer W, such as dissolution or corrosion.

<Configuration of substrate cleaning system>

Next, the configuration of the substrate cleaning system according to the first embodiment will be described with reference to FIG. 2 . 2 is a schematic diagram showing the configuration of the substrate cleaning system according to the first embodiment. In the following, in order to clarify the positional relationship, the X-axis, the Y-axis, and the Z-axis orthogonal to each other are defined, and the positive Z-axis direction is the vertically upward direction.

As shown in FIG. 2 , the substrate cleaning system 1 includes a carry-in/out station 2 and a processing station 3 . The carrying-in/out station 2 and the processing station 3 are provided adjacently.

The carry-in/out station 2 includes a carrier arrangement unit 11 and a transfer unit 12 . A plurality of transport containers (hereinafter, referred to as 'carriers (C)') capable of accommodating a plurality of wafers W in a horizontal state are disposed in the carrier arrangement unit 11 .

The transport section 12 is provided adjacent to the carrier arrangement section 11 . A substrate transfer device 121 and a transfer unit 122 are provided inside the transfer unit 12 .

The substrate transfer apparatus 121 includes a wafer holding mechanism for holding the wafer W. As shown in FIG. In addition, the substrate transfer apparatus 121 can move in horizontal and vertical directions and pivot about a vertical axis, and the wafer W is positioned between the carrier C and the transfer unit 122 using a wafer holding mechanism. ) is returned.

A processing station 3 is provided adjacent to the conveying unit 12 . The processing station 3 includes a transfer unit 13 and a plurality of substrate cleaning apparatuses 14 . A plurality of substrate cleaning apparatuses 14 are arranged on both sides of the transfer unit 13 .

The transfer unit 13 includes a substrate transfer device 131 therein. The substrate transfer apparatus 131 includes a wafer holding mechanism for holding the wafer W. As shown in FIG. In addition, the substrate transfer apparatus 131 can move in horizontal and vertical directions and pivot about a vertical axis, and a wafer is placed between the transfer unit 122 and the substrate cleaning apparatus 14 using a wafer holding mechanism. (W) is conveyed.

The substrate cleaning apparatus 14 is an apparatus that performs a substrate cleaning process based on the above-described substrate cleaning method. A specific configuration of such a substrate cleaning apparatus 14 will be described later.

Further, the substrate cleaning system 1 includes a control device 4 . The control device 4 is a device that controls the operation of the substrate cleaning system 1 . Such a control device 4 is, for example, a computer, and includes a control unit 15 and a storage unit 16 . A program for controlling various processes such as a substrate cleaning process is stored in the storage unit 16 . The control unit 15 controls the operation of the substrate cleaning system 1 by reading and executing the program stored in the storage unit 16 .

In addition, such a program may be recorded in a computer-readable storage medium, and may be installed in the storage unit 16 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

In the substrate cleaning system 1 configured as described above, first, the substrate transfer device 121 of the carry-in/out station 2 takes out the wafer W from the carrier C, and It is disposed on the transfer unit 122 . The wafer W placed in the transfer unit 122 is taken out from the transfer unit 122 by the substrate transfer device 131 of the processing station 3 , and loaded into the substrate cleaning apparatus 14 , and the substrate cleaning apparatus 14 . ) to perform a substrate cleaning process. The cleaned wafer W is carried out from the substrate cleaning apparatus 14 by the substrate transfer apparatus 131 , is placed in the transfer unit 122 , and then returned to the carrier C by the substrate transfer apparatus 121 .

<Configuration of substrate cleaning apparatus>

Next, the structure of the substrate cleaning apparatus 14 is demonstrated with reference to FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning apparatus 14 according to the first embodiment.

As shown in FIG. 3 , the substrate cleaning apparatus 14 includes a chamber 20 , a substrate holding mechanism 30 , a first liquid supply unit 40 , a second liquid supply unit 50 , and a recovery cup 60 . ) is provided.

The chamber 20 accommodates the substrate holding mechanism 30 , the first liquid supply unit 40 , the second liquid supply unit 50 , and the recovery cup 60 . A Fan Filter Unit (FFU) 21 is provided on the ceiling of the chamber 20 . The FFU 21 forms a down flow in the chamber 20 .

The FFU 21 is connected to the downflow gas supply source 23 via a valve 22 . The FFU 21 discharges the down flow gas (eg, dry air) supplied from the down flow gas supply source 23 into the chamber 20 .

The substrate holding mechanism 30 includes a rotation holding unit 31 , a supporting column 32 , and a driving unit not shown. The rotation holding part 31 is provided at approximately the center of the chamber 20 . A holding member 311 for holding the wafer W from the side is provided on the upper surface of the rotation holding unit 31 . The wafer W is horizontally held in a state slightly spaced apart from the upper surface of the rotation holding part 31 by the holding member 311 .

The supporting member 32 is a member extending in the vertical direction, the base end is rotatably supported by the driving unit, and the rotation holding unit 31 is horizontally supported at the front end.

This substrate holding mechanism 30 rotates the rotation holding unit 31 supported by the supporting unit 32 by rotating the supporting unit 32 , and thereby the wafer W held by the rotating holding unit 31 . rotate the

The first liquid supply unit 40 supplies various processing liquids to the upper surface of the wafer W held by the substrate holding mechanism 30 . The first liquid supply unit 40 includes a nozzle 41 , an arm 42 that horizontally supports the nozzle 41 , and a swing lift mechanism 43 that swings and lifts the arm 42 .

The nozzles 41 are respectively connected to the top coat liquid supply source 45a, the peeling treatment liquid source 45b, and the dissolution treatment liquid supply source 45c via valves 44a to 44c. In the first embodiment, HFE, which is one of the non-polar solvents, is used as the peeling treatment liquid. In addition, IPA, which is one of the polar solvents, is used as the dissolution treatment liquid.

The first liquid supply unit 40 is configured as described above, and supplies a top coat liquid, a peeling treatment liquid, or a dissolution treatment liquid to the wafer W.

The second liquid supply unit 50 supplies various processing liquids to the back surface of the wafer W held by the substrate holding mechanism 30 . The second liquid supply unit 50 includes a nozzle 51 , a nozzle 52 , and a shaft 53 .

The nozzle 51 is connected to the dissolution treatment liquid supply source 45c via a valve 55a. The nozzle 52 is connected to the peeling treatment liquid supply source 45b via a valve 55b. The shaft part 53 is located in the rotation center of the rotation holding part 31, and is surrounded by the support|pillar part 32. As shown in FIG.

In addition, a supply pipe for supplying the processing fluid from the respective valves 55a and 55b to the nozzles 51 and 52 is conducted therein. The nozzle 52 extends vertically upward, and the tip of the discharge port faces the center of the back surface of the wafer W. As shown in FIG. On the other hand, the nozzle 51 extends in the outer circumferential direction of the rotation holding part 31 provided with the holding member 311 , and the tip thereof faces the periphery of the back surface of the wafer W .

The recovery cup 60 is disposed to surround the rotation holder 31 , and collects the processing liquid scattered from the wafer W by the rotation of the rotation holder 31 . A drain port 61 is formed at the bottom of the recovery cup 60 , and the processing liquid collected by the recovery cup 60 is discharged from the drain port 61 to the outside of the substrate cleaning apparatus 14 . do. In addition, an exhaust port 62 for discharging the downflow gas supplied from the FFU 21 to the outside of the substrate cleaning apparatus 14 is formed at the bottom of the recovery cup 60 .

<Specific operation of substrate cleaning system>

Next, a specific operation of the substrate cleaning apparatus 14 will be described with reference to Figs. 4 and 5A to 5D. In the first embodiment, a substrate on which a film made of Ge (germanium) is formed on the surface is targeted. 4 is a flowchart showing a processing sequence of a substrate cleaning process performed by the substrate cleaning apparatus 14 according to the first embodiment. 5A to 5D are diagrams for explaining the operation of the substrate cleaning apparatus 14 .

As shown in Fig. 4, in the substrate cleaning apparatus 14, a substrate carrying-in process is first performed (step S101). In such a substrate carrying-in process, the wafer W carried in the chamber 20 by the substrate transfer apparatus 131 (refer to FIG. 2 ) is held by the holding member 311 of the substrate holding mechanism 30 .

At this time, the wafer W is held by the holding member 311 with the pattern formation surface facing upward. After that, the rotation holding unit 31 rotates by the driving unit. Thereby, the wafer W rotates together with the rotation holding part 31 in a state held horizontally by the rotation holding part 31 .

Next, in the substrate cleaning apparatus 14, a film forming process liquid supply process is performed (step S102). In this film-forming process liquid supply process, as shown in FIG. 5A, the top coat liquid which is a film-forming process liquid is supplied with respect to the pattern formation surface of the wafer W on which the resist is not formed. In this way, the top coat liquid is supplied onto the wafer W without interposing the resist.

The top coat liquid supplied to the wafer W spreads on the surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W, as shown in FIG. 5B . Then, the top coat solution solidifies or hardens while causing volumetric shrinkage accompanying volatilization of the volatile components, thereby forming a liquid film of the top coating solution on the pattern formation surface of the wafer W.

Next, a drying process is performed in the substrate cleaning apparatus 14 (step S103). In this drying process, for example, the top coat liquid is dried by increasing the rotation speed of the wafer W for a predetermined time. Thereby, the volatilization of the volatile components contained in the top coat solution is accelerated, the top coat solution is solidified or cured, and a top coat film is formed on the pattern formation surface of the wafer (W).

However, the top coat liquid supplied to the main surface of the wafer W flows slightly from the periphery of the wafer W to the back surface of the wafer W as shown in FIG. 5B . For this reason, when a drying process is performed, it will be in the state in which the top coat film|membrane was formed also in the periphery of the bevel part of the wafer W and the back surface side. Even while the top coating solution is being supplied before the drying treatment is performed, since the top coating solution is solidified and cured, there is a risk that a top coating film may be formed.

Therefore, after the supply of the top coat liquid from the nozzle 41 to the main surface of the wafer W is started and before the supply is finished, as shown in FIG. 5C , from the nozzle 51 of the second liquid supply unit 50 , A dissolution treatment liquid (here, IPA) is supplied to the periphery of the wafer W on the back side.

This IPA is supplied to the periphery of the back surface side of the wafer W, and then flows from the bevel portion of the wafer W to the periphery on the main surface side. As a result, as shown in FIG. 5D , the top coat film or top coat solution adhering to the peripheral portion on the back surface side, the bevel portion, and the peripheral portion on the main surface side of the wafer W is dissolved and removed. After that, the rotation of the wafer W is stopped.

In the first embodiment, the nozzle 51 is inclined and its tip faces the periphery where the top coat film is formed, and the dissolution treatment liquid is directly supplied to the periphery. Therefore, compared with the case where the dissolution treatment solution is supplied to the central position of the back surface of the substrate and the dissolution treatment solution is supplied to the periphery using centrifugal force, the top coat film can be dissolved in a small amount.

After the top coat liquid is solidified or cured by the drying treatment to form a top coat film, a peeling treatment liquid supply treatment is performed in the substrate cleaning apparatus 14 (step S104). In this peeling treatment liquid supply process, HFE, which is a peeling treatment liquid, is supplied from the nozzle 41 and the nozzle 52 to the top coat film formed on the wafer W. The HFE supplied to the top coat film is spread on the top coat film by the centrifugal force accompanying the rotation of the wafer W.

HFE penetrates into the top coat film to reach the interface of the wafer W, and penetrates into the interface (pattern formation surface) of the wafer W to peel the top coat film from the wafer W. Thereby, the particle P adhering to the pattern formation surface of the wafer W is peeled from the wafer W together with a top coat film.

Next, in the substrate cleaning apparatus 14, a dissolution treatment liquid supply process is performed (step S105). In such a dissolution treatment liquid supply process, IPA as a dissolution treatment liquid is supplied from the nozzle 41 and the nozzle 51 to the top coat film peeled from the wafer W. Thereby, the top coat film is dissolved.

Next, a rinse process is performed in the substrate cleaning apparatus 14 (step S106). In this rinsing process, a relatively large flow rate of IPA is supplied from the nozzle 41 and the nozzle 51 to the rotating wafer W than in step S105, so that the dissolved top coat film and particles floating in the IPA ( P) is removed from the wafer W together with the IPA.

Next, a drying process is performed in the substrate cleaning apparatus 14 (step S107). In this drying process, for example, by increasing the rotation speed of the wafer W for a predetermined time, IPA remaining on the surface of the wafer W is shaken off and the wafer W is dried. After that, the rotation of the wafer W is stopped.

Next, in the substrate cleaning apparatus 14, a substrate unloading process is performed (step S108). In this substrate carrying-out process, the wafer W is taken out from the chamber 20 of the substrate cleaning apparatus 14 by the substrate transfer apparatus 131 (refer to FIG. 2 ).

Thereafter, the wafer W is accommodated in the carrier C disposed in the carrier arrangement unit 11 via the transfer unit 122 and the substrate transfer device 121 . When this substrate unloading process is completed, the substrate cleaning process for one wafer W is completed.

As described above, the substrate cleaning system 1 according to the first embodiment includes a film forming processing liquid supply unit (first liquid supply unit 40), and a peeling processing liquid supply unit (first liquid supply unit 40, second liquid supply unit). (50)) and a dissolution treatment liquid supply unit (a first liquid supply unit 40 and a second liquid supply unit 50).

The film forming treatment liquid supply unit supplies a film forming treatment liquid (topcoat liquid) for forming a film on the wafer W containing volatile components to the wafer W having a hydrophilic surface. The release treatment liquid supply unit is configured to peel the film forming treatment liquid (top coat film) from the wafer W with respect to the film forming treatment liquid (top coat film) that has been solidified or cured on the wafer W due to volatilization of the volatile components. (HFE) is supplied.

Then, the dissolution treatment liquid supply unit supplies a dissolution treatment liquid (IPA) for dissolving the film forming treatment liquid (top coat film) to the solidified or hardened film forming treatment liquid (top coat film).

Therefore, according to the substrate cleaning system 1 according to the first embodiment, it is possible to remove particles P having a small particle diameter attached to the wafer W without affecting the surface of the substrate.

In the first embodiment, HFE, which is one of the non-polar solvents, was used as the peeling treatment liquid, and IPA, which is one of the polar solvents, was used as the dissolution treatment liquid. Thereby, the cleaning process can be performed without affecting the surface of the wafer W such as dissolution or corrosion.

Not limited to the above example, any one of non-polar solvents HFC, HFO, and PFC is used as the stripping solution, and alcohols (other than IPA), PGMEA, PGME, and MIBC, which are polar solvents, are used as the dissolution treatment solution. You can also use Further, a small amount of a polar organic solvent may be mixed with the peeling treatment liquid. When a small amount of the polar organic solvent dissolves the film in a trace amount, the non-polar solvent easily permeates into the film and at the interface with the substrate, and the peelability of the film is improved.

Also, even if a metal material of a magnetoresistive memory such as Ge or MRAM is used as the wafer W, the same can be applied. In addition, the same cleaning can be performed not only on a substrate on which a film made of Ge (germanium) is formed on the surface, but also on a substrate on which a film made of a group III-V material or a metal material for MRAM is formed.

In addition, the film-forming treatment liquid is not limited to the top coat liquid, and may be a liquid containing a synthetic resin, which is a polar organic substance that cures and shrinks by drying, and is appropriately peeled and dissolved in relation to the release treatment liquid and the dissolution treatment liquid. , for example, a resist solution containing a phenol resin may be used with another treatment solution.

In addition, the pretreatment of the cleaning treatment is not limited, and for example, wet cleaning using an organic cleaning solution is performed on the wafer W to which the polymer and particles are adhered after dry etching, and then the processing shown in FIG. 4 is started. you can do it

(Second embodiment)

<Contents of substrate cleaning method>

The substrate cleaning method according to the second embodiment makes it possible to process the wafer W to which at least a part of the metal wiring formed therein is exposed without being constrained by the Q-time.

Here, Q-time is a time limit set with respect to the leaving time after dry etching in order to prevent oxidation of the metal wiring exposed by dry etching, etc., for example.

When the Q-time is set, since time management to comply with the Q-time is required, there is a fear that a decrease in productivity accompanying an increase in the number of processes occurs. In addition, when the set Q-time is short, line management becomes difficult. For this reason, we are also concerned about the fall of productivity by the complexity of line management.

6 is a schematic diagram showing the configuration of a wafer W according to the second embodiment. 6 , in the second embodiment, the wafer W has a wiring layer on the bottom surface, and Cu wiring, which is an example of metal wiring, is formed in the wiring layer. Here, P is an unnecessary material, and in addition to the particles in the first embodiment, a reaction product such as a polymer generated by dry etching or ashing is also included.

7A to 7E are explanatory views of a substrate cleaning method according to the second embodiment. In the substrate cleaning method according to the second embodiment, as shown in FIG. 7A , the same film forming processing liquid as in the first embodiment is supplied onto the wafer W. As shown in FIG.

When the top coat film is formed on the wafer W, the Cu wiring exposed by the dry etching is in a state covered by the top coat film. The wafer W is accommodated in the transfer container in this state.

As described above, according to the substrate cleaning method according to the second embodiment, by protecting the exposed Cu wiring with the top coat film, the case where the exposed Cu wiring is adversely affected by oxidation or the like is eliminated, so that the setting of the Q-time is becomes unnecessary As Q-time becomes unnecessary, time management for complying with Q-time becomes unnecessary, and it is also possible to prevent complexity of line management accompanying compliance with Q-time. Therefore, according to the substrate cleaning method according to the second embodiment, productivity can be improved.

In addition, the unnecessary material P as a reaction product grows when the residual gas of dry etching reacts with moisture or oxygen in the atmosphere. In contrast, according to the substrate cleaning method according to the second embodiment, by protecting the exposed Cu wiring with the top coat film, the growth of the unnecessary material P as a reaction product can be suppressed. Therefore, it is also possible to prevent adverse effects such as a decrease in electrical properties and a decrease in yield due to the unnecessary material P as a reaction product.

In addition, in the substrate cleaning method according to the second embodiment, after taking out the wafer W accommodated in the transfer container, the top coat film formed on the wafer W is removed to remove the unnecessary material P is also performed. .

In the substrate cleaning method according to the second embodiment shown in Figs. 7A to 7E, the difference from Figs. 1A to 1E, which are explanatory drawings of the first embodiment, is only the presence or absence of Cu wiring, and the film forming treatment liquid and peeling process used. The liquid and the dissolution treatment liquid are the same as those of the first embodiment. Therefore, similarly to the first embodiment, it is possible to remove the unnecessary substances (particles and reaction products) P with a small particle diameter adhering to the wafer W without affecting the surface of the substrate. In addition to this, since the substrate cleaning method of the second embodiment does not require Q-time, it is applied to the following substrate cleaning systems.

<Configuration of substrate cleaning system>

Next, the structure of the substrate cleaning system which implements the above-mentioned substrate cleaning method is demonstrated with reference to FIG. 8 is a diagram showing a schematic configuration of a substrate cleaning system according to a second embodiment.

As shown in FIG. 8 , the substrate cleaning system 1001 according to the second embodiment includes a first processing apparatus 1002 as a pre-processing apparatus and a second processing apparatus 1 as a post-processing apparatus. Further, the substrate cleaning system 1001 includes a control device 4A and a control device 4 .

The first processing apparatus 1002 performs dry etching and supply of a top coat solution to the wafer W. In addition, the second processing apparatus 1 supplies the peeling processing liquid and the dissolving processing liquid to the wafer W processed by the first processing apparatus 1002 . The second processing apparatus 1 has the same configuration as the substrate cleaning system 1 in the first embodiment, and in the second embodiment, the control method of the system is different from that in the first embodiment. Accordingly, in the second embodiment, the description of the configuration is omitted, and the details of the control method will be described later.

The control device 4A is, for example, a computer, and includes a control unit 15A and a storage unit 16A. The storage unit 16A includes, for example, a storage device such as a RAM (Random Access Memory), a ROM (Read Only Memory), and a hard disk, and controls various processes executed in the first processing device 1002 . remember the program The control unit 15A is, for example, a CPU (Central Processing Unit), and controls the operation of the first processing device 1002 by reading and executing the program stored in the storage unit 16A.

Incidentally, such a program is recorded in a computer-readable storage medium, and is installed from the storage medium into the storage unit 16A of the control device 4A or the storage unit 16 of the control device 4 . also good Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

<Configuration of first processing device>

Next, the configuration of the first processing apparatus 1002 will be described with reference to FIG. 9 . 9 is a diagram showing a schematic configuration of a first processing apparatus 1002 according to the second embodiment. In the following, in order to clarify the positional relationship, the X-axis, the Y-axis, and the Z-axis orthogonal to each other are defined, and the positive Z-axis direction is the vertically upward direction.

As shown in FIG. 9 , the first processing apparatus 1002 includes a carry-in/out station 1005 and a processing station 1006 . The carry-in/out station 1005 and the processing station 1006 are provided adjacent to each other.

The carry-in/out station 1005 includes an arrangement unit 1010 and a transfer unit 1011 . A plurality of transfer containers (hereinafter, referred to as carriers C) for accommodating a plurality of wafers W in a horizontal state are disposed in the placement unit 1010 .

The transfer unit 1011 is provided adjacent to the placement unit 1010 , and includes a substrate transfer device 1111 therein. The substrate transfer apparatus 1111 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer apparatus 1111 can move in horizontal and vertical directions and pivot about a vertical axis, and the wafer W is placed between the carrier C and the processing station 1006 using a wafer holding mechanism. ) is returned.

Specifically, the substrate transfer apparatus 1111 takes out the wafer W from the carrier C disposed on the placement unit 1010 , and a dry etching unit of the processing station 1006 , which will be described later. The process of carrying in to (1012) is performed. In addition, the substrate transfer apparatus 1111 removes the wafer W from the first liquid processing unit 1014 of the processing station 1006 to be described later, and places the removed wafer W on the carrier C of the placement unit 1010 . ) is also processed.

A processing station 1006 is provided adjacent to the conveyance unit 1011 . The processing station 1006 includes a dry etching unit 1012 , a load lock chamber 1013 , and a first liquid processing unit 1014 .

The dry etching unit 1012 corresponds to an example of the preprocessing unit, and performs dry etching processing on the wafer W carried in by the substrate transfer apparatus 1111 . Thereby, the Cu wiring inside the wafer W is exposed.

In addition, the dry etching process is performed in a pressure-reduced state. In addition, in the dry etching unit 1012, an ashing process for removing unnecessary resist may be performed after the dry etching process.

The load lock chamber 1013 is configured to convert the internal pressure into an atmospheric pressure state and a reduced pressure state. A substrate transfer device (not shown) is provided inside the load lock chamber 1013 . The wafer W, which has been processed in the dry etching unit 1012 , is unloaded from the dry etching unit 1012 by a substrate transfer device (not shown) in the load lock chamber 1013 , and then loaded into the first liquid processing unit 1014 . do.

Specifically, the inside of the load lock chamber 1013 is maintained at a reduced pressure until the wafer W is unloaded from the dry etching unit 1012, and after the unloading is completed, an inert gas such as nitrogen or argon is supplied. converted to atmospheric pressure. Then, after switching to the atmospheric pressure state, a substrate transfer device (not shown) in the load lock chamber 1013 carries the wafer W into the first liquid processing unit 1014 .

In this way, since the wafer W is blocked from the outside air from the time it is taken out from the dry etching unit 1012 to the time it is loaded into the first liquid processing unit 1014, oxidation of the exposed Cu wiring is prevented.

Next, the first liquid processing unit 1014 performs a film-forming processing liquid supply process of supplying a top coat liquid to the wafer W. As described above, the top coat liquid supplied to the wafer W is solidified or cured while causing volumetric shrinkage to become a top coat film. Thereby, the exposed Cu wiring is in a state covered with the top coat film.

The wafer W after the film-forming processing liquid supply process is accommodated in the carrier C by the substrate transfer apparatus 1111 , and then transferred to the second processing apparatus 1 .

<Configuration of dry etching unit>

Next, the structure of each unit with which the above-mentioned 1st processing apparatus 1002 is equipped is demonstrated. First, the configuration of the dry etching unit 1012 will be described with reference to FIG. 10 . 10 is a schematic diagram showing an example of the configuration of the dry etching unit 1012 according to the second embodiment.

As shown in FIG. 10 , the dry etching unit 1012 includes a chamber 1201 having a closed structure for accommodating the wafer W, and the wafer W is arranged horizontally in the chamber 1201 . A stand 1202 is provided. The mounting table 1202 includes a temperature control mechanism 1203 that cools or heats the wafer W to adjust the temperature to a predetermined temperature. A carry-in/out port (not shown) is provided on the side wall of the chamber 1201 for carrying in and out of the wafer W between the load lock chamber 1013 and the load lock chamber 1013 .

A shower head 1204 is provided on the ceiling of the chamber 1201 . A gas supply pipe 1205 is connected to the shower head 1204 . An etching gas supply source 1207 is connected to the gas supply pipe 1205 via a valve 1206 , and a predetermined etching gas is supplied from the etching gas supply source 1207 to the shower head 1204 . The shower head 1204 supplies the etching gas supplied from the etching gas supply source 1207 into the chamber 1201 .

The etching gas supplied from the etching gas supply source 1207 is, for example, CH ₃ F gas, CH ₂ F ₂ gas, CF ₄ gas, O ₂ gas, Ar gas, or the like.

An exhaust device 1209 is connected to the bottom of the chamber 1201 via an exhaust line 1208 . The pressure inside the chamber 1201 is maintained in a reduced pressure state by the exhaust device 1209 .

The dry etching unit 1012 is configured as described above, and in a state in which the inside of the chamber 1201 is depressurized using the exhaust device 1209, an etching gas is supplied from the shower head 1204 into the chamber 1201. The wafer W placed on the mounting table 1202 is dry-etched. Thereby, the Cu wiring is exposed.

<Configuration of first liquid processing unit>

Next, the configuration of the first liquid processing unit 1014 included in the first processing apparatus 1002 will be described with reference to FIG. 11 . 11 is a schematic diagram showing an example of the configuration of the first liquid processing unit 1014 according to the second embodiment.

11 , the first liquid processing unit 1014 includes a chamber 1020 , a substrate holding mechanism 1030 , a liquid supply unit 40_1 , and a recovery cup 1050 .

The chamber 1020 accommodates the substrate holding mechanism 1030 , the liquid supply unit 40_1 , and the recovery cup 1050 . A fan filter unit (FFU) 1021 is provided on the ceiling of the chamber 1020 . FFU 1021 forms a down flow in chamber 1020 .

An inert gas supply source 1023 is connected to the FFU 1021 via a valve 1022 . The FFU 1021 discharges an inert gas such _{as N 2} gas supplied from the inert gas supply source 1023 into the chamber 1020 . In this way, by using the inert gas as the downflow gas, it is possible to prevent the exposed Cu wirings from being oxidized.

The substrate holding mechanism 1030 includes a rotation holder 1031 for rotatably holding the wafer W, and a hollow portion 1314 of the rotation holder 1031 to be inserted through the wafer W. A fluid supply unit 1032 for supplying gas to the lower surface is provided.

The rotation holding part 1031 is provided at approximately the center of the chamber 1020 . A holding member 1311 for holding the wafer W from the side is provided on the upper surface of the rotation holding unit 1031 . The wafer W is horizontally held in a state slightly spaced apart from the upper surface of the rotation holding unit 1031 by the holding member 1311 .

Further, the substrate holding mechanism 1030 includes a motor and a drive mechanism 1312 constituted by a belt or the like that transmits the rotation of the motor to the rotation holding unit 1031 . The rotation holding portion 1031 is rotated about the vertical axis by this drive mechanism 1312 . Then, as the rotation holding unit 1031 rotates, the wafer W held by the rotation holding unit 1031 rotates integrally with the rotation holding unit 1031 . In addition, the rotation holding part 1031 is rotatably supported by the chamber 1020 and the recovery cup 1050 with the bearing 1313 interposed therebetween.

The fluid supply part 1032 is inserted and passed through the hollow part 1314 formed in the center of the rotation holding part 1031 . A flow path 1321 is formed in the fluid supply unit 1032 , and an N ₂ supply source 1034 is connected to the flow path 1321 via a valve 1033 . The fluid supply unit 1032 supplies the N _{2 gas supplied from the N 2} source 1034 to the lower surface of the wafer W through the valve 1033 and the flow path 1321 .

_{The N 2} gas supplied through the valve 1033 is a high-temperature (eg, about 90° C.) N ₂ gas, and is used for a volatilization accelerating process to be described later.

When the wafer W is received from a substrate transfer device (not shown) in the load lock chamber 1013, the substrate holding mechanism 1030 raises the fluid supply unit 1032 by using a lifting mechanism (not shown). The wafer W is disposed on a support pin (not shown) provided on the upper surface of the fluid supply unit 1032 . Thereafter, the substrate holding mechanism 1030 lowers the fluid supply unit 1032 to a predetermined position, and then transfers the wafer W to the holding member 1311 of the rotation holding unit 1031 . In addition, the substrate holding mechanism 1030 raises the fluid supply unit 1032 using a lifting mechanism (not shown) when transferring the processed wafer W to the substrate transfer apparatus 1111 , and the holding member ( The wafer W held by 1311 is placed on a support pin (not shown). Then, the substrate holding mechanism 1030 transfers the wafer W placed on a support pin (not shown) to the substrate transfer apparatus 1111 .

The liquid supply unit 40_1 includes a nozzle 1041a , an arm 1042 , and a swing raising/lowering mechanism 1043 . A top coat liquid supply source 1045a is connected to the nozzle 1041a via a valve 1044a. The liquid supply unit 40_1 supplies the top coat liquid from the nozzle 1041a.

The recovery cup 1050 is disposed to surround the rotation holder 1031 , and collects the processing liquid scattered from the wafer W by the rotation of the rotation holder 1031 . A drain port 1051 is formed at the bottom of the recovery cup 1050 , and the treatment liquid collected by the recovery cup 1050 is discharged from the drain port 1051 to the outside of the first liquid treatment unit 1014 . . In addition, at the bottom of the recovery cup 1050 , _{an exhaust port 1052 for discharging the N 2} gas supplied by the fluid supply unit 1032 and the inert gas supplied from the FFU 1021 to the outside of the first liquid processing unit 1014 . is formed

<Specific operation of substrate cleaning system>

Next, a specific operation of the substrate cleaning system 1001 will be described with reference to FIG. 12 . 12 is a flowchart showing a processing procedure of substrate cleaning according to the second embodiment. In addition, each processing procedure shown in FIG. 12 is performed based on the control of the control apparatus 4A or the control apparatus 4 .

In the substrate cleaning system 1001 according to the second embodiment, the processing from the dry etching process (step S201) to the first carrying-out process (step S204) shown in FIG. 12 is performed in the first processing apparatus 1002 . and processing from the substrate carrying-in process (step S205) to the second carrying-out process (step S210) is performed in the second processing apparatus 1 .

As shown in Fig. 12, first, dry etching processing is performed in the dry etching unit 1012 (step S201). In this dry etching process, the dry etching unit 1012 performs dry etching or ashing on the wafer W. Thereby, the Cu wiring provided inside the wafer W is exposed (refer FIG. 6).

Next, the wafer W is loaded into the first liquid processing unit 1014 . Since this loading process is performed through the load lock chamber 1013, oxidation of the exposed Cu wiring can be prevented.

Next, in the first liquid processing unit 1014 , a film forming processing liquid supply process is performed (step S202 ). In such a film forming processing liquid supply process, the nozzle 1041a of the liquid supply unit 40_1 is located above the center of the wafer W . After that, the top coat liquid as the film forming processing liquid is supplied from the nozzle 1041a to the main surface of the wafer W, which is the circuit formation surface on which the resist film is not formed.

The top coat liquid supplied to the wafer W is spread on the main surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, a liquid film of the top coat liquid is formed on the entire main surface of the wafer W (refer to Fig. 7A).

Next, a drying process is performed in the first liquid processing unit 1014 (step S203). In this drying process, for example, the top coat liquid is dried by increasing the rotation speed of the wafer W for a predetermined time. Thereby, the volatilization of the volatile components contained in the top coat liquid is accelerated, the top coat liquid is solidified or hardened, and a top coat film is formed on the entire main surface of the wafer W.

Next, a first discharging process is performed in the first liquid processing unit 1014 (step S204). In this first unloading process, the substrate transfer apparatus 1111 takes out the wafer W from the first liquid processing unit 1014 , transports it to the placement unit 1010 , and carries the carrier ( C) is accepted.

At this time, the exposed Cu wiring of the wafer W is covered with a top coat film in a short time after dry etching. That is, since the Cu wiring is in a state cut off from the outside air, it is not adversely affected by oxidation or the like.

Therefore, according to the substrate cleaning system 1001 according to the second embodiment, since time management for complying with the Q-time from after dry etching to cleaning becomes unnecessary, productivity can be improved.

Next, a substrate carrying-in process is performed (step S205). In such a substrate carrying-in process, the wafer W accommodated in the carrier C is transferred from the first processing apparatus 1002 to the carrier arrangement unit 11 of the second processing apparatus 1 . Thereafter, the wafer W is taken out from the carrier C by the substrate transfer apparatus 121 (refer to FIG. 2 ) of the second processing apparatus 1 , and the transfer unit 122 and the substrate transfer apparatus 131 are removed. It is carried in to the board|substrate washing|cleaning apparatus 14 via way.

Then, the wafer W loaded into the chamber 20 is held by the holding member 311 of the substrate holding mechanism 30 . At this time, the wafer W is held by the holding member 311 with the pattern formation surface facing upward. Then, the rotation holding part 31 rotates by the drive part. Thereby, the wafer W rotates together with the rotation holding part 31 in a state held horizontally by the rotation holding part 31 .

Next, in the substrate cleaning apparatus 14, a peeling treatment liquid supply process is performed (step S206). In this peeling treatment liquid supply process, HFE, which is a peeling treatment liquid, is supplied from the nozzle 41 and the nozzle 52 to the top coat film formed on the wafer W. HFE supplied to the top coat film spreads on the top coat film by centrifugal force accompanying the rotation of the wafer W (see Fig. 7B).

HFE penetrates into the top coat film to reach the interface of the wafer W, penetrates into the interface (pattern formation surface) of the wafer W, and peels the top coat film from the wafer W. Thereby, the unnecessary material P adhering to the pattern formation surface of the wafer W is peeled from the wafer W together with a top coat film (refer FIG. 7C).

Here, in the second embodiment, not only particles but also reaction products generated by dry etching are contained as unnecessary substances P. When a CF-based gas is used in dry etching, the reaction product is a fluorine-containing compound, and has a property of being soluble in HFE having a perfluoroalkyl group, for example. In the state of FIG. 7C , most of the reaction products are separated from the wafer W due to the volumetric shrinkage of the top coat solution, but a small amount remains on the wafer W in some cases. Even in such a case, when the above-described HFE is used, the reaction product with a little remaining HFE penetrating and reaching the interface of the wafer W can be dissolved. In addition, this effect is not limited to HFE, but can also be acquired with other fluorine-type solvents, such as HFC.

Next, in the substrate cleaning apparatus 14, a dissolution treatment liquid supply process is performed (step S207). In such a dissolution treatment liquid supply process, IPA as a dissolution treatment liquid is supplied from the nozzle 41 and the nozzle 51 to the top coat film peeled from the wafer W. Thereby, the top coat film is dissolved.

Next, a rinse process is performed in the substrate cleaning apparatus 14 (step S208). In this rinsing process, a relatively large flow rate of IPA is supplied from the nozzle 41 and the nozzle 51 with respect to the rotating wafer W than in step S207, so that the dissolved top coat film and impurities floating in the IPA are (P) is removed from the wafer (W) together with the IPA.

Next, a drying process is performed in the substrate cleaning apparatus 14 (step S209). In this drying process, for example, by increasing the rotation speed of the wafer W for a predetermined time, IPA remaining on the surface of the wafer W is shaken off and the wafer W is dried. After that, the rotation of the wafer W is stopped.

Next, in the substrate cleaning apparatus 14, a 2nd carrying out process is performed (step S210). In this second unloading process, the wafer W is taken out from the chamber 20 of the substrate cleaning device 14 by the substrate transport device 131 (refer to FIG. 2 ).

Thereafter, the wafer W is accommodated in the carrier C arranged in the carrier arrangement unit 11 via the transfer unit 122 and the substrate transfer device 121 . When this second unloading process is completed, the substrate cleaning process for one wafer W is completed.

As described above, the substrate cleaning system 1001 according to the second embodiment includes the first processing apparatus 1002 and the second processing apparatus 1 (the substrate cleaning system 1 ). Then, after the film formation processing liquid supply unit (liquid supply unit 40_1) of the first processing apparatus 1002 is supplied with the film formation processing liquid, the topcoat liquid is solidified or cured to form a processing film on the wafer W with a carrier (C) was accepted as Then, in the second processing apparatus 1 , the wafer W accommodated in the carrier C was taken out and the peeling treatment liquid was supplied. Thereby, in addition to the effect of the first embodiment, an effect of improvement of productivity by relaxation of Q-time is obtained.

In the second embodiment, the substrate to be processed is the wafer W after dry etching or after ashing in which at least a part of the Cu wiring formed therein is exposed. It is possible. In addition, the present invention is not limited to the metal wiring, and may be applied to a material to which a material to be prevented from contacting with oxygen is exposed, such as Ge or a material of group III-V.

In addition, the film-forming treatment liquid used in the first and second embodiments is not limited to a top coat liquid having properties that can be actually applied in the lithography process, and the solidification solution described using FIGS. 1A to 1E and 7A to 7E is not limited. Alternatively, it may be a liquid containing a polar organic substance, which is optimized to perform actions such as curing, peeling, and dissolving accurately.

W : Wafer
P : Particles
1: Substrate cleaning system
4: control device
14: substrate cleaning device
30: substrate holding mechanism
40: first liquid supply unit
50: second liquid supply unit

Claims (14)

A substrate cleaning method for cleaning a substrate comprising Ge or a material of group III-V, the method comprising:
A film forming treatment liquid supplying step of supplying a film forming treatment liquid containing a volatile component and containing a polar organic material for forming a film on the substrate after dry etching or ashing to the substrate containing Ge or a material of group III-V;
a peeling treatment liquid supplying step of supplying a stripping treatment liquid containing a non-polar solvent for peeling the treatment film from the substrate to the treatment film in which the film forming treatment liquid is solidified or cured on the substrate by volatilization of the volatile component;
a dissolution treatment solution supply step of supplying a dissolution treatment solution containing a polar solvent dissolving the treatment film to the treatment film after the peeling treatment solution supply step;
After the dissolution treatment solution supply step, a rinse treatment solution supply step of supplying a rinse treatment solution containing a polar solvent to the substrate;
The method of claim 1, wherein the peeling treatment liquid does not contain water, the dissolution treatment liquid does not contain water, and the rinsing treatment liquid does not contain water. The method of claim 1,
The substrate cleaning method, characterized in that the film-forming treatment liquid is a liquid containing a synthetic resin which is a polar organic substance. 3. The method of claim 1 or 2,
The polar solvent comprises at least one solvent selected from among alcohols, PGMEA, PGME, and MIBC. 3. The method of claim 1 or 2,
The non-polar solvent is a substrate cleaning method, characterized in that it comprises a fluorine-based solvent. 5. The method of claim 4,
The non-polar solvent comprises at least one solvent selected from among HFE, HFC, HFO and PFC. 3. The method of claim 1 or 2,
The substrate cleaning method, characterized in that the substrate has a film formed of Ge or a group III-V material. 3. The method of claim 1 or 2,
The substrate cleaning method, characterized in that the substrate has a wiring pattern formed of a metal material. 3. The method of claim 1 or 2,
In the film forming treatment liquid supply step, while the film forming treatment liquid is supplied to the surface of the substrate or after the film forming treatment liquid is supplied to the substrate, the dissolution treatment liquid is applied to the periphery of the back surface of the substrate. Substrate cleaning method, characterized in that the supply. 3. The method of claim 1 or 2,
a receiving step of accommodating a substrate on which the film forming treatment liquid is solidified or cured by volatilization of the volatile component after the film forming treatment liquid supply step and the treatment film is formed in a transfer container;
A taking out step of taking out the substrate after the film forming treatment liquid supply step accommodated in the transport container
further comprising,
The peeling treatment liquid supply process comprises:
supplying the peeling treatment liquid to the substrate taken out in the extraction step
Substrate cleaning method, characterized in that. 10. The method of claim 9,
The substrate has a metal wiring formed therein, at least a portion of which is exposed after dry etching or ashing
Substrate cleaning method, characterized in that. 11. The method of claim 10,
In the dry etching, a CF-based gas is used, and the stripping treatment liquid is a fluorine-based solvent.
Substrate cleaning method, characterized in that. A substrate cleaning system for cleaning a substrate comprising Ge or a group III-V material, comprising:
A film forming treatment solution containing volatile components and polar organic substances, a peeling treatment solution containing no water but a non-polar solvent, a dissolution treatment solution containing no water but a polar solvent, and a polar solvent free of water a treatment liquid supply unit for supplying a rinse treatment liquid to the substrate including Ge or a material of group III-V;
and a control device configured to control the processing liquid supply unit,
The control device is configured to supply the film forming treatment liquid for forming a film on the substrate after dry etching or ashing to the substrate, and volatilize the volatile component so that the film forming treatment liquid is solidified or cured on the substrate. The stripping treatment liquid for peeling the treatment film from the substrate is supplied to the substrate, and after the release treatment liquid is supplied, the dissolution treatment liquid for dissolving the treatment film is supplied to the treatment film, and the dissolution treatment liquid is supplied to the treatment film thereafter, the substrate cleaning system according to claim 1, wherein the processing liquid supply unit is controlled so that the rinse processing liquid is supplied to the substrate. A computer-readable storage medium operating on a computer and storing a program for controlling a substrate cleaning system, comprising:
When the program is executed, the computer controls the substrate cleaning system so that the substrate cleaning method according to claim 1 or 2 is performed.
A storage medium, characterized in that. A film forming treatment liquid supplying step of supplying a film forming treatment liquid containing a volatile component and containing a polar organic material for forming a film on the substrate to the substrate;
a peeling treatment liquid supplying step of supplying a peeling treatment liquid for peeling the treatment film from the substrate to a treatment film in which the film forming treatment liquid is solidified or cured on the substrate by volatilization of the volatile component;
a dissolution treatment solution supply step of supplying a dissolution treatment solution for dissolving the treatment film to the treatment film after the peeling treatment solution supply step;
The stripping treatment liquid used in the stripping treatment liquid supply step contains a non-polar solvent that does not contain water, and the dissolution treatment liquid used in the dissolution treatment liquid supply step contains a polar solvent that does not contain water,
The stripping treatment liquid further includes a polar organic solvent, wherein the polar organic solvent dissolves the treatment film so that the non-polar solvent is provided in an amount capable of penetrating into the treatment film and an interface between the treatment film and the substrate
Substrate cleaning method, characterized in that.

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