JP2017216431A - Substrate cleaning method, substrate cleaning system and recording medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To remove an unnecessary object adhering to a substrate, composed of a material causing dissolution or corrosion by reacting on water, without affecting the surface of the substrate.SOLUTION: A substrate cleaning method includes a deposition process liquid supply step, an exfoliation process liquid supply step, and a dissolution process liquid supply step. The deposition process liquid supply step supplies deposition process liquid, containing a volatile constituent and forming a film on a substrate, to the substrate. The exfoliation process liquid supply step supplies exfoliation process liquid, for exfoliating a treatment film from the substrate, to the treatment film formed by solidification or hardening of the deposition process liquid on the substrate due to volatilization of volatile constituent. The dissolution process liquid supply step supplies dissolution process liquid for dissolving the treatment film to the treatment film, after the exfoliation process liquid supply step. The deposition process liquid contains a polar organic matter, the exfoliation process liquid is a nonpolar solvent not containing water, and the dissolution process liquid is a polar solvent not containing water.SELECTED DRAWING: Figure 4

Description

  Embodiments disclosed herein relate to a substrate cleaning method, a substrate cleaning system, and a storage medium.

  Conventionally, there has been known a substrate cleaning apparatus that removes particles adhering to a substrate such as a silicon wafer or a compound semiconductor wafer. In the substrate cleaning method disclosed in Patent Document 1, a film forming process liquid for forming a film on a substrate containing a volatile component is supplied to the substrate, and the film forming process liquid is solidified on the substrate by volatilization of the volatile component. Alternatively, the surface of the substrate is affected by supplying a peeling treatment liquid for peeling the treatment film from the substrate to the cured treatment film, and then supplying a solution for dissolving the treatment film to the treatment film. In this way, unnecessary substances having a small particle diameter attached to the substrate are removed.

JP2015-119164A

  However, the substrate cleaning method of Patent Document 1 uses a stripping treatment solution and a dissolution treatment solution containing moisture, and is a material such as Ge (germanium) or III-V group that may be dissolved by reacting with water. It cannot be applied to a substrate made of Further, it cannot be applied to a substrate made of a metal material of a magnetoresistive memory that may be corroded in response to water.

  One aspect of an embodiment is a substrate cleaning method, a substrate cleaning system, and a substrate cleaning method capable of removing unnecessary substances attached to the substrate without affecting the surface of the substrate made of a material that reacts with water and causes dissolution or corrosion. An object is to provide a storage medium.

  A substrate cleaning method according to an aspect of an embodiment includes a film formation processing liquid supply step for supplying a film formation processing liquid for forming a film on a substrate including a volatile component to the substrate, and the volatile component is volatilized. A peeling treatment liquid supply step for supplying a peeling treatment liquid for peeling the treatment film from the substrate to a treatment film obtained by solidifying or curing the film formation treatment liquid on the substrate, and the peeling treatment liquid supply step And a dissolution treatment liquid supply step for supplying a dissolution treatment liquid for dissolving the treatment film with respect to the treatment film, and the release treatment liquid used in the release treatment solution supply step is a nonpolar solvent containing no moisture The dissolution treatment liquid used in the dissolution treatment liquid supply step is a polar solvent that does not contain moisture.

  In one aspect of the embodiment, unnecessary substances attached to the substrate can be removed without affecting the surface of the substrate made of a material that reacts with water and causes dissolution or corrosion.

FIG. 1A is an explanatory diagram of a substrate cleaning method according to the first embodiment. FIG. 1B is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 1C is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 1D is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 1E is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 2 is a schematic diagram illustrating a configuration of the substrate cleaning system according to the first embodiment. FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning apparatus according to the first embodiment. FIG. 4 is a flowchart showing the processing procedure of the substrate cleaning process executed by the substrate cleaning apparatus according to the first embodiment. FIG. 5A is an operation explanatory diagram of the first substrate cleaning apparatus. FIG. 5B is an operation explanatory diagram of the first substrate cleaning apparatus. FIG. 5C is an operation explanatory diagram of the first substrate cleaning apparatus. FIG. 5D is an operation explanatory diagram of the first substrate cleaning apparatus. FIG. 6 is a schematic diagram illustrating a configuration of a wafer according to the second embodiment. FIG. 7A is an explanatory diagram of a substrate cleaning method according to the second embodiment. FIG. 7B is an explanatory diagram of the substrate cleaning method according to the second embodiment. FIG. 7C is an explanatory diagram of the substrate cleaning method according to the second embodiment. FIG. 7D is an explanatory diagram of the substrate cleaning method according to the second embodiment. FIG. 7E is an explanatory diagram of the substrate cleaning method according to the second embodiment. FIG. 8 is a schematic diagram illustrating a schematic configuration of a substrate cleaning system according to the second embodiment. FIG. 9 is a schematic diagram illustrating a schematic configuration of the first processing apparatus according to the second embodiment. FIG. 10 is a schematic diagram illustrating an example of a configuration of a dry etching unit according to the second embodiment. FIG. 11 is a schematic diagram illustrating an example of a configuration of a first liquid processing unit according to the second embodiment. FIG. 12 is a flowchart showing a substrate cleaning process procedure according to the second embodiment.

  Hereinafter, embodiments of a substrate cleaning method, a substrate cleaning system, and a storage medium disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)
<Contents of substrate cleaning method>
First, the contents of the substrate cleaning method according to the first embodiment will be described with reference to FIGS. 1A to 1E. 1A to 1E are explanatory views of a substrate cleaning method according to the first embodiment.

  As shown in FIG. 1A, the substrate cleaning method according to the first embodiment includes a volatile component with respect to the pattern formation surface of a substrate such as a silicon wafer or a compound semiconductor wafer (hereinafter referred to as “wafer W”). A processing liquid for forming a film on the wafer W (hereinafter referred to as “film forming processing liquid”) is supplied.

  The film-forming treatment liquid supplied to the pattern formation surface of the wafer W is solidified or cured while causing volume shrinkage due to volatilization of the volatile components, thereby forming a treatment film. As a result, the pattern formed on the wafer W and the particles P adhering to the pattern are covered with the processing film (see FIG. 1B). Here, “solidification” means solidification, and “curing” means that molecules are connected to each other to be polymerized (for example, crosslinking or polymerization).

  Subsequently, as shown in FIG. 1B, the peeling treatment liquid is supplied to the treatment film on the wafer W. The peeling treatment liquid is a treatment liquid for peeling the above-described treatment film from the wafer W.

  Specifically, after being supplied onto the processing film, it penetrates into the processing film and reaches the interface of the wafer W. The stripping solution that has reached the interface of the wafer W penetrates into the pattern forming surface that is the interface of the wafer W.

  As described above, when the peeling treatment liquid permeates between the wafer W and the treatment film, the treatment film is peeled off from the wafer W in a “film” state, and accordingly, the particles P adhering to the pattern formation surface are removed. It peels from the wafer W together with the treatment film (see FIG. 1C).

  Note that the film-forming treatment liquid can separate the particles P attached to the pattern or the like from the pattern or the like due to distortion (tensile force) generated by volume contraction accompanying volatilization of the volatile component.

  Subsequently, a solution for dissolving the treatment film is supplied to the treatment film peeled from the wafer W. Thereby, the treatment film is dissolved, and the particles P taken in the treatment film are in a state of floating in the dissolution treatment liquid (see FIG. 1D). After that, the particles P are removed from the wafer W by washing away the dissolution treatment liquid or the dissolved treatment film with pure water or the like (see FIG. 1E).

  As described above, in the substrate cleaning method according to the first embodiment, the processing film formed on the wafer W is peeled from the wafer W in a “film” state, so that the particles P attached to the pattern or the like are processed into the processing film. At the same time, the wafer W was removed.

  Therefore, according to the substrate cleaning method according to the first embodiment, particle removal is performed without using a chemical action, so that erosion of the underlying film due to an etching action or the like can be suppressed.

  In addition, according to the substrate cleaning method according to the first embodiment, the particles P can be removed with a weak force as compared with the conventional substrate cleaning method using physical force, so that pattern collapse can be suppressed. it can.

  Furthermore, according to the substrate cleaning method according to the first embodiment, it is possible to easily remove particles P having a small particle diameter, which are difficult to remove by the conventional substrate cleaning method using physical force. .

  In the substrate cleaning method according to the first embodiment, after the processing film is formed on the wafer W, it is completely removed from the wafer W without performing pattern exposure. Therefore, the cleaned wafer W is in a state before the film-forming treatment liquid is applied, that is, a state where the pattern forming surface is exposed.

  In the first embodiment, a topcoat liquid is used as the film forming treatment liquid. The topcoat film obtained by solidifying or curing the topcoat liquid is a protective film applied on the upper surface of the resist in order to prevent the immersion liquid from entering the resist.

  The immersion liquid is a liquid used for immersion exposure in a lithography process, for example. The topcoat liquid contains an acrylic resin having a property that the volume shrinks when solidifying or curing.

  As a result, volume shrinkage is caused not only by volatilization of the volatile component but also by curing shrinkage of the acrylic resin, so that the volume shrinkage rate is larger than that of the film forming treatment liquid containing only the volatile component, and the particles P are strongly separated. Can do.

  In particular, since the acrylic resin has a larger volume shrinkage rate than other resins such as an epoxy resin, the top coat liquid is effective in that it gives a tensile force to the particles P. In addition, it is not necessary to use the top coat liquid itself used in the lithography process, and in order to improve the tensile force due to volume shrinkage and the peeling performance from the substrate, a liquid obtained by adding another chemical to the top coat liquid used in the lithography process. It may be used.

  In Patent Document 1, DIW is used as a stripping treatment liquid and an alkaline aqueous solution is used as a dissolution treatment liquid. However, depending on the material forming the surface of the wafer W, a treatment liquid containing moisture cannot be used. Examples of such a material include Ge or III-V group, and this kind of material is dissolved by reacting with water. There are also metal materials for magnetoresistive memories such as MRAM, PCRAM, and ReRAM, and this type of material also corrodes in response to water.

  In the first embodiment, instead of a solvent containing moisture, an organic solvent that does not contain moisture and does not cause a reaction such as dissolution or corrosion to the wafer W made of the above-described material is used. In addition, since the top coat film on the wafer W is made of an acrylic resin that is a polar organic substance, the non-polar solvent that does not dissolve the top coat film is used as the stripping treatment liquid, and the dissolution treatment liquid has a polarity that dissolves the top coat film. Use solvent.

  In general, polar substances easily dissolve polar substances, nonpolar substances easily dissolve nonpolar substances, and polar substances and nonpolar substances have a property of being difficult to dissolve each other. In addition, since the non-polar treatment liquid has good wettability regardless of the surface state, even if the surface of the wafer W is hydrophobic, it can aggregate at the interface between the surface and the film to peel off the film. .

  Specifically, as a stripping treatment liquid, for example, among non-polar solvents such as HFE (hydrofluoroether), HFC (hydrofluorocarbon), HFO (hydrofluoroolefin), PFC (perfluorocarbon), etc. At least one solvent can be used.

  In addition, as the solution for dissolving, for example, polar solvents such as alcohols (for example, IPA), PGME (propylene glycol monomethyl ether), PGMEA (propylene glycol monomethyl ether acetate), MIBC (4-methyl-2-pentanol), etc. Of these, at least one solvent can be used.

  Although not limited to the above, the cleaning treatment can be performed without affecting the surface of the wafer W such as dissolution and corrosion by using the peeling treatment liquid and the dissolution treatment liquid composed of these exemplified solvents. it can.

<Configuration of substrate cleaning system>
Next, the configuration of the substrate cleaning system according to the first embodiment will be described with reference to FIG. FIG. 2 is a schematic diagram illustrating a configuration of the substrate cleaning system according to the first embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 2, the substrate cleaning system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.

  The carry-in / out station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of transfer containers (hereinafter referred to as “carrier C”) that can store a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.

  The transport unit 12 is provided adjacent to the carrier placement unit 11. A substrate transfer device 121 and a delivery unit 122 are provided inside the transfer unit 12.

  The substrate transfer device 121 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 121 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 122 using a wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transfer unit 13 and a plurality of substrate cleaning apparatuses 14. The plurality of substrate cleaning apparatuses 14 are provided side by side on both sides of the transport unit 13.

  The transport unit 13 includes a substrate transport device 131 inside. The substrate transfer device 131 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 131 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and the wafer W can be transferred between the delivery unit 122 and the substrate cleaning device 14 using a wafer holding mechanism. Transport.

  The substrate cleaning apparatus 14 is an apparatus that executes a substrate cleaning process based on the above-described substrate cleaning method. A specific configuration of the substrate cleaning apparatus 14 will be described later.

  The substrate cleaning system 1 includes a control device 4. The control device 4 is a device that controls the operation of the substrate cleaning system 1. The control device 4 is a computer, for example, and includes a control unit 15 and a storage unit 16. The storage unit 16 stores a program for controlling various processes such as a substrate cleaning process. The control unit 15 controls the operation of the substrate cleaning system 1 by reading and executing the program stored in the storage unit 16.

  Such a program may be recorded on a computer-readable storage medium and may be installed in the storage unit 16 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the substrate cleaning system 1 configured as described above, first, the substrate transfer device 121 of the carry-in / out station 2 takes out the wafer W from the carrier C and places the taken-out wafer W on the delivery unit 122. The wafer W placed on the delivery unit 122 is taken out from the delivery unit 122 by the substrate transfer device 131 of the processing station 3 and carried into the substrate cleaning device 14, and the substrate cleaning process is performed by the substrate cleaning device 14. The cleaned wafer W is unloaded from the substrate cleaning device 14 by the substrate transfer device 131 and placed on the delivery unit 122, and then returned to the carrier C by the substrate transfer device 121.

<Configuration of substrate cleaning device>
Next, the configuration of the substrate cleaning apparatus 14 will be described with reference to FIG. FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning apparatus 14 according to the first embodiment.

  As shown in FIG. 3, the substrate cleaning apparatus 14 includes a chamber 20, a substrate holding mechanism 30, a first liquid supply unit 40, a second liquid supply unit 50, and a recovery cup 60.

  The chamber 20 accommodates the substrate holding mechanism 30, the first liquid supply unit 40, the second liquid supply unit 50, and the recovery cup 60. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20.

  The FFU 21 is connected to the downflow gas supply source 23 via the valve 22. The FFU 21 discharges downflow gas (for example, dry air) supplied from the downflow gas supply source 23 into the chamber 20.

  The substrate holding mechanism 30 includes a rotation holding unit 31, a support column 32, and a driving unit (not shown). The rotation holding unit 31 is provided in the approximate center of the chamber 20. A holding member 311 that holds the wafer W from the side surface is provided on the upper surface of the rotation holding unit 31. The wafer W is horizontally held by the holding member 311 while being slightly separated from the upper surface of the rotation holding unit 31.

  The support | pillar part 32 is a member extended in a perpendicular direction, a base end part is rotatably supported by the drive part, and supports the rotation holding | maintenance part 31 horizontally in a front-end | tip part.

  The substrate holding mechanism 30 rotates the support part 32 to rotate the rotation holding part 31 supported by the support part 32, thereby rotating the wafer W held by the rotation holding part 31.

  The first liquid supply unit 40 supplies various processing liquids to the upper surface of the wafer W held by the substrate holding mechanism 30. The first liquid supply unit 40 includes a nozzle 41, an arm 42 that horizontally supports the nozzle 41, and a turning lift mechanism 43 that turns and lifts the arm 42.

  The nozzle 41 is connected to the topcoat liquid supply source 45a, the stripping treatment liquid supply source 45b, and the dissolution treatment liquid supply source 45c via valves 44a to 44c, respectively. In the first embodiment, HFE which is one of nonpolar solvents is used as the stripping treatment liquid. Moreover, IPA which is one of polar solvents is used as the dissolution treatment liquid.

  The first liquid supply unit 40 is configured as described above, and supplies the topcoat liquid, the peeling process liquid, or the dissolution process liquid to the wafer W.

  The second liquid supply unit 50 supplies various processing liquids to the back surface of the wafer W held by the substrate holding mechanism 30. The second liquid supply unit 50 includes a nozzle 51, a nozzle 52, and a shaft portion 53.

  The nozzle 51 is connected to the dissolution processing liquid supply source 45c via the valve 55a. The nozzle 52 is connected to the stripping treatment liquid supply source 45b via the valve 55b. The shaft portion 53 is located at the rotation center of the rotation holding portion 31 and is surrounded by the column portion 32.

  In addition, a supply pipe for supplying a processing fluid from the valves 55a and 55b to the nozzles 51 and 52 is made conductive. The nozzle 52 extends vertically upward, and the tip of the discharge port faces the center of the back surface of the wafer W. On the other hand, the nozzle 51 extends in the outer peripheral direction of the rotation holding unit 31 provided with the holding member 311, and the tip thereof faces the peripheral edge of the back surface of the wafer W.

  The collection cup 60 is disposed so as to surround the rotation holding unit 31 and collects the processing liquid scattered from the wafer W by the rotation of the rotation holding unit 31. A drain port 61 is formed at the bottom of the recovery cup 60, and the processing liquid collected by the recovery cup 60 is discharged from the drain port 61 to the outside of the substrate cleaning apparatus 14. Further, an exhaust port 62 for discharging the downflow gas supplied from the FFU 21 to the outside of the substrate cleaning apparatus 14 is formed at the bottom of the recovery cup 60.

<Specific operation of substrate cleaning system>
Next, a specific operation of the substrate cleaning apparatus 14 will be described with reference to FIGS. 4 and 5A to 5D. The first embodiment is directed to a substrate on which a film made of Ge (germanium) is formed on the surface. FIG. 4 is a flowchart showing a substrate cleaning process performed by the substrate cleaning apparatus 14 according to the first embodiment. 5A to 5D are explanatory diagrams of the operation of the substrate cleaning apparatus 14.

  As shown in FIG. 4, in the substrate cleaning apparatus 14, first, a substrate carry-in process is performed (step S101). In such a substrate carry-in process, the wafer W carried into the chamber 20 by the substrate carrying device 131 (see FIG. 2) is held by the holding member 311 of the substrate holding mechanism 30.

  At this time, the wafer W is held by the holding member 311 with the pattern forming surface facing upward. Thereafter, the rotation holding unit 31 is rotated by the drive unit. Thereby, the wafer W rotates together with the rotation holding unit 31 while being held horizontally by the rotation holding unit 31.

  Subsequently, in the substrate cleaning apparatus 14, a film forming process liquid supply process is performed (step S102). In such a film forming process liquid supply process, as shown in FIG. 5A, a top coat liquid as a film forming process liquid is supplied to the pattern forming surface of the wafer W on which no resist is formed. Thus, the top coat liquid is supplied onto the wafer W without passing through the resist.

  The top coat liquid supplied to the wafer W spreads on the surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W, as shown in FIG. 5B. Then, the top coat liquid is solidified or cured while causing volume shrinkage due to volatilization of the volatile components, whereby a liquid film of the top coat liquid is formed on the pattern forming surface of the wafer W.

  Subsequently, the substrate cleaning apparatus 14 performs a drying process (step S103). In such a drying process, for example, the top coat liquid is dried by increasing the rotation speed of the wafer W for a predetermined time. Thereby, volatilization of the volatile component contained in the topcoat liquid is promoted, the topcoat liquid is solidified or cured, and a topcoat film is formed on the pattern forming surface of the wafer W.

  By the way, the top coat liquid supplied to the main surface of the wafer W slightly wraps around from the peripheral portion of the wafer W to the back surface of the wafer W as shown in FIG. For this reason, when the drying process is executed, the top coat film is also formed on the bevel portion of the wafer W and the peripheral portion on the back surface side. Even before the drying process is performed and while the topcoat solution is being supplied, the topcoat solution may be solidified and cured, so that a topcoat film may be formed.

  Therefore, after the supply of the topcoat liquid from the nozzle 41 to the main surface of the wafer W is started and before the supply is finished, as shown in FIG. 5C, the wafer W is discharged from the nozzle 51 of the second liquid supply unit 50. A dissolution treatment liquid (IPA in this case) is supplied to the peripheral portion on the back side.

  After such IPA is supplied to the peripheral portion on the back surface side of the wafer W, it goes around from the bevel portion of the wafer W to the peripheral portion on the main surface side. As a result, as shown in FIG. 5D, the top coat film or the top coat liquid adhering to the peripheral portion on the back surface side, the bevel portion and the peripheral portion on the main surface side of the wafer W is dissolved and removed. Thereafter, the rotation of the wafer W is stopped.

  In the first embodiment, the nozzle 51 is inclined and the tip thereof is directed to the peripheral edge where the top coat film is formed, and the dissolution processing liquid is supplied directly to the peripheral edge. Therefore, it is possible to dissolve the topcoat film in a small amount as compared with the case where the dissolution treatment liquid is supplied to the center position of the back surface of the substrate and the dissolution treatment liquid is supplied to the peripheral portion using centrifugal force.

  After the topcoat liquid is solidified or cured by the drying process to form a topcoat film, the substrate cleaning apparatus 14 performs a peeling process liquid supply process (step S104). In such a peeling treatment liquid supply process, HFE which is a peeling treatment liquid is supplied from the nozzle 41 and the nozzle 52 to the topcoat film formed on the wafer W. The HFE supplied to the top coat film spreads on the top coat film by the centrifugal force accompanying the rotation of the wafer W.

  The HFE penetrates into the top coat film and reaches the interface of the wafer W, penetrates the interface (pattern formation surface) of the wafer W, and peels the top coat film from the wafer W. Thereby, the particles P adhering to the pattern forming surface of the wafer W are peeled from the wafer W together with the top coat film.

  Subsequently, in the substrate cleaning apparatus 14, a dissolution processing liquid supply process is performed (step S105). In such dissolution processing liquid supply processing, IPA as the dissolution processing liquid is supplied from the nozzle 41 and the nozzle 51 to the top coat film peeled from the wafer W. Thereby, the top coat film is dissolved.

  Subsequently, the substrate cleaning apparatus 14 performs a rinsing process (step S106). In such a rinsing process, IPA having a relatively larger flow rate than that in step S105 is supplied to the rotating wafer W from the nozzle 41 and the nozzle 51, so that the dissolved topcoat film and particles P floating in the IPA are generated. , Removed from the wafer W together with the IPA.

  Subsequently, the substrate cleaning apparatus 14 performs a drying process (step S107). In such a drying process, for example, by increasing the rotational speed of the wafer W for a predetermined time, the IPA remaining on the surface of the wafer W is shaken off and the wafer W is dried. Thereafter, the rotation of the wafer W is stopped.

  Subsequently, in the substrate cleaning apparatus 14, a substrate carry-out process is performed (step S108). In such a substrate carry-out process, the wafer W is taken out from the chamber 20 of the substrate cleaning device 14 by the substrate transfer device 131 (see FIG. 2).

  Thereafter, the wafer W is accommodated in the carrier C placed on the carrier placement unit 11 via the delivery unit 122 and the substrate transfer device 121. When the substrate carry-out process is completed, the substrate cleaning process for one wafer W is completed.

  As described above, the substrate cleaning system 1 according to the first embodiment includes the film formation processing liquid supply unit (first liquid supply unit 40) and the stripping process liquid supply unit (first liquid supply unit 40, second liquid supply unit). Liquid supply unit 50) and a dissolution processing liquid supply unit (first liquid supply unit 40, second liquid supply unit 50).

  The film forming process liquid supply unit supplies a film forming process liquid (top coat liquid) for forming a film on the wafer W containing a volatile component to the wafer W having a hydrophilic surface. The peeling treatment liquid supply unit peels the film forming treatment liquid (top coat film) from the wafer W with respect to the film forming treatment liquid (top coat film) solidified or cured on the wafer W due to volatilization of volatile components. A peeling treatment liquid (HFE) is supplied.

  The dissolution treatment liquid supply unit supplies a dissolution treatment liquid (IPA) that dissolves the film formation treatment liquid (topcoat film) in the solidified or cured film formation treatment liquid (topcoat film).

  Therefore, according to the substrate cleaning system 1 according to the first embodiment, it is possible to remove the particles P having a small particle diameter attached to the wafer W without affecting the surface of the substrate.

  In the first embodiment, HFE, which is one of nonpolar solvents, is used as the peeling treatment liquid, and IPA, which is one of polar solvents, is used as the dissolution treatment liquid. As a result, the cleaning process can be performed without affecting the surface of the wafer W such as melting or corrosion.

  Without being limited to the above example, any of non-polar solvents HFC, HFO, and PFC is used as the stripping treatment liquid, and alcohols (other than IPA) that are polar solvents, PGMEA, PGME, and MIBC are used as the dissolution treatment liquid. Either can be used. Note that a small amount of a polar organic solvent may be mixed in the peeling treatment liquid. When a small amount of a polar organic solvent dissolves a film in a small amount, the nonpolar solvent easily penetrates into the film and the interface with the substrate, and the peelability of the film is improved.

  Further, even when a metal material of a magnetoresistive memory such as Ge or MRAM is used as the wafer W, the same applies. Further, not only on a substrate having a film made of Ge (germanium) on the surface, but also on a substrate on which a film using a III-V group material or a metal material for MRAM is formed. Similar cleaning can be performed.

  In addition, the film forming treatment liquid is not limited to the top coat liquid, but may be a liquid containing a synthetic resin that is a polar organic substance that cures and shrinks by drying treatment and is appropriately peeled and dissolved in relation to the peeling treatment liquid and the dissolution treatment liquid. For example, another processing solution such as a resist solution containing a phenol resin may be used.

  Further, the pretreatment of the cleaning treatment is not limited. For example, wet cleaning using an organic cleaning liquid is performed on the wafer W to which the polymer and particles after dry etching are adhered, and thereafter, FIG. You may make it start the process shown to.

(Second Embodiment)
<Contents of substrate cleaning method>
The substrate cleaning method according to the second embodiment makes it possible to process the wafer W from which at least a part of the metal wiring formed therein is exposed without being restricted by Q-time.

  Here, Q-time is a time limit set with respect to the standing time after dry etching in order to prevent, for example, oxidation of metal wiring exposed by dry etching.

  When Q-time is set, time management for complying with Q-time is required, and thus there is a risk that productivity decreases due to an increase in man-hours. Moreover, when the Q-time to be set is short, line management becomes difficult. For this reason, there is a concern that productivity may be lowered due to complicated line management.

  FIG. 6 is a schematic diagram illustrating a configuration of a wafer W according to the second embodiment. As shown in FIG. 6, in the second embodiment, the wafer W has a wiring layer on the bottom surface, and Cu wiring, which is an example of metal wiring, is formed on the wiring layer. Here, P is an unnecessary substance and includes a reaction product such as a polymer generated by dry etching or ashing in addition to the particles in the first embodiment.

  7A to 7E are explanatory views of the substrate cleaning method according to the second embodiment. In the substrate cleaning method according to the second embodiment, as shown in FIG. 7A, the same film forming treatment liquid as in the first embodiment is supplied onto the wafer W.

  When the topcoat film is formed on the wafer W, the Cu wiring exposed by the dry etching is covered with the topcoat film. The wafer W is accommodated in the transfer container in this state.

  As described above, according to the substrate cleaning method according to the second embodiment, the exposed Cu wiring is protected by the top coat film, so that the exposed Cu wiring is not adversely affected by oxidation or the like. Setting time is not required. Since Q-time is not required, time management for complying with Q-time is not required, and complexity of line management associated with compliance with Q-time can be prevented. Therefore, according to the substrate cleaning method according to the second embodiment, productivity can be improved.

  Further, the unnecessary material P as a reaction product grows when the residual gas of dry etching reacts with moisture and oxygen in the atmosphere. On the other hand, according to the substrate cleaning method according to the second embodiment, it is possible to suppress the growth of the unwanted substance P as a reaction product by protecting the exposed Cu wiring with the top coat film. Therefore, adverse effects such as a decrease in electrical characteristics and a decrease in yield due to the unnecessary substance P as a reaction product can be prevented.

  Note that in the substrate cleaning method according to the second embodiment, after removing the wafer W accommodated in the transfer container, the top coat film formed on the wafer W is removed to remove the unnecessary material P. Do.

  In the substrate cleaning method according to the second embodiment shown in FIGS. 7A to 7E, the difference from FIGS. 1A to 1E that are explanatory diagrams of the first embodiment is only the presence or absence of Cu wiring, The film treatment liquid, the peeling treatment liquid, and the dissolution treatment liquid are the same as those in the first embodiment. Therefore, similarly to the first embodiment, it is possible to remove unnecessary substances (particles and reaction products) P having a small particle diameter attached to the wafer W without affecting the surface of the substrate. In addition to this, the substrate cleaning method of the second embodiment is applied to the following substrate cleaning system in order to eliminate the need for Q-time.

<Configuration of substrate cleaning system>
Next, the configuration of the substrate cleaning system that executes the above-described substrate cleaning method will be described with reference to FIG. FIG. 8 is a diagram showing a schematic configuration of a substrate cleaning system according to the second embodiment.

  As shown in FIG. 8, the substrate cleaning system 1001 according to the second embodiment includes a first processing apparatus 1002 as a pre-processing apparatus and a second processing apparatus 1 as a post-processing apparatus. The substrate cleaning system 1001 includes a first control device 4A and a second control device 4.

  The first processing apparatus 1002 supplies dry etching and topcoat liquid to the wafer W. Further, the second processing apparatus 1 supplies the peeling processing solution and the dissolution processing solution to the wafer W processed by the first processing device 1002. The second processing apparatus 1 has the same configuration as the substrate cleaning system 1 in the first embodiment. In the second embodiment, the system control method is different from the first embodiment. Therefore, description of the configuration is omitted in the second embodiment, and details of the control method will be described later.

  4A of 1st control apparatuses are computers, for example, and are provided with the control part 15A and the memory | storage part 16A. The storage unit 16 </ b> A includes a storage device such as a RAM (Random Access Memory), a ROM (Read Only Memory), and a hard disk, and stores programs for controlling various processes executed in the first processing device 1002. The control unit 15A is, for example, a CPU (Central Processing Unit), and controls the operation of the first processing device 1002 by reading and executing a program stored in the storage unit 16A.

  These programs are recorded in a computer-readable storage medium, and are installed in the storage unit 16A of the first control device 4A and the storage unit 16 of the second control device 4 from the storage medium. It may be. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

<Configuration of first processing apparatus>
Next, the configuration of the first processing apparatus 1002 will be described with reference to FIG. FIG. 9 is a diagram illustrating a schematic configuration of the first processing apparatus 1002 according to the second embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 9, the first processing apparatus 1002 includes a carry-in / out station 1005 and a processing station 1006. The carry-in / out station 1005 and the processing station 1006 are provided adjacent to each other.

  The carry-in / out station 1005 includes a placement unit 1010 and a transport unit 1011. A plurality of transfer containers (hereinafter referred to as carriers C) for storing a plurality of wafers W in a horizontal state are mounted on the mounting unit 1010.

  The transport unit 1011 is provided adjacent to the placement unit 1010 and includes a substrate transport device 1111 inside. The substrate transfer apparatus 1111 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 1111 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the processing station 1006 using the wafer holding mechanism. Do.

  Specifically, the substrate transfer apparatus 1111 performs a process of taking out the wafer W from the carrier C placed on the placement unit 1010 and carrying the taken out wafer W into the dry etching unit 1012 of the processing station 1006 described later. The substrate transfer apparatus 1111 also performs a process of taking out the wafer W from a first liquid processing unit 1014 of the processing station 1006 described later and storing the taken out wafer W in the carrier C of the mounting unit 1010.

  The processing station 1006 is provided adjacent to the transfer unit 1011. The processing station 1006 includes a dry etching unit 1012, a load lock chamber 1013, and a first liquid processing unit 1014.

  The dry etching unit 1012 corresponds to an example of a preprocessing unit, and performs a dry etching process on the wafer W loaded by the substrate transfer apparatus 1111. Thereby, the Cu wiring inside the wafer W is exposed.

  Note that the dry etching process is performed in a reduced pressure state. In the dry etching unit 1012, an ashing process for removing unnecessary resist may be performed after the dry etching process.

  The load lock chamber 1013 is configured so that the internal pressure can be switched between an atmospheric pressure state and a reduced pressure state. A substrate transfer device (not shown) is provided inside the load lock chamber 1013. The wafer W that has been processed in the dry etching unit 1012 is unloaded from the dry etching unit 1012 by a substrate transfer device (not shown) in the load lock chamber 1013 and is loaded into the first liquid processing unit 1014.

  Specifically, the inside of the load lock chamber 1013 is kept under reduced pressure until the wafer W is unloaded from the dry etching unit 1012, and after the unloading is completed, an inert gas such as nitrogen or argon is supplied. To switch to atmospheric pressure. Then, after switching to the atmospheric pressure state, a substrate transfer device (not shown) in the load lock chamber 1013 carries the wafer W into the first liquid processing unit 1014.

  As described above, since the wafer W is cut off from the outside air after being unloaded from the dry etching unit 1012 until being loaded into the first liquid processing unit 1014, oxidation of the exposed Cu wiring is prevented.

  Subsequently, the first liquid processing unit 1014 performs a film forming process liquid supply process for supplying a topcoat liquid to the wafer W. As described above, the top coat liquid supplied to the wafer W is solidified or cured while causing volume shrinkage to form a top coat film. As a result, the exposed Cu wiring is covered with the top coat film.

  The wafer W after the film forming process liquid supply process is accommodated in the carrier C by the substrate transfer apparatus 1111 and then transferred to the second processing apparatus 1.

<Configuration of dry etching unit>
Next, the configuration of each unit included in the first processing apparatus 1002 described above will be described. First, the configuration of the dry etching unit 1012 will be described with reference to FIG. FIG. 10 is a schematic diagram showing an example of the configuration of the dry etching unit 1012 according to the second embodiment.

  As shown in FIG. 10, the dry etching unit 1012 includes a chamber 1201 having a sealed structure that accommodates the wafer W, and a mounting table 1202 for mounting the wafer W in a horizontal state is provided in the chamber 1201. The mounting table 1202 includes a temperature adjustment mechanism 1203 that cools or heats the wafer W to adjust it to a predetermined temperature. A loading / unloading port (not shown) for loading / unloading the wafer W to / from the load lock chamber 1013 is provided on the side wall of the chamber 1201.

  A shower head 1204 is provided on the ceiling of the chamber 1201. A gas supply pipe 1205 is connected to the shower head 1204. An etching gas supply source 1207 is connected to the gas supply pipe 1205 via a valve 1206, and a predetermined etching gas is supplied from the etching gas supply source 1207 to the shower head 1204. The shower head 1204 supplies the etching gas supplied from the etching gas supply source 1207 into the chamber 1201.

  The etching gas supplied from the etching gas supply source 1207 is, for example, CH3F gas, CH2F2 gas, CF4 gas, O2 gas, Ar gas source, or the like.

  An exhaust device 1209 is connected to the bottom of the chamber 1201 through an exhaust line 1208. The pressure inside the chamber 1201 is maintained in a reduced pressure state by the exhaust device 1209.

  The dry etching unit 1012 is configured as described above, and supplies the etching gas from the shower head 1204 into the chamber 1201 in a state where the inside of the chamber 1201 is decompressed using the exhaust device 1209, so that the mounting table 1202 is placed. The mounted wafer W is dry-etched. As a result, the Cu wiring is exposed.

<Configuration of first liquid processing unit>
Next, the structure of the 1st liquid processing unit 1014 with which the 1st processing apparatus 1002 is provided is demonstrated with reference to FIG. FIG. 11 is a schematic diagram illustrating an example of the configuration of the first liquid processing unit 1014 according to the second embodiment.

  As shown in FIG. 11, the first liquid processing unit 1014 includes a chamber 1020, a substrate holding mechanism 1030, a liquid supply unit 40_1, and a recovery cup 1050.

  The chamber 1020 accommodates the substrate holding mechanism 1030, the liquid supply unit 40_1, and the recovery cup 1050. An FFU (Fan Filter Unit) 1021 is provided on the ceiling of the chamber 1020. The FFU 1021 forms a downflow within the chamber 1020.

  An inert gas supply source 1023 is connected to the FFU 1021 through a valve 1022. The FFU 1021 discharges an inert gas such as N 2 gas supplied from the inert gas supply source 1023 into the chamber 1020. Thus, by using an inert gas as the downflow gas, it is possible to prevent the exposed Cu wiring from being oxidized.

  The substrate holding mechanism 1030 includes a rotation holding unit 1031 that rotatably holds the wafer W, and a fluid supply unit 1032 that is inserted into the hollow portion 1314 of the rotation holding unit 1031 and supplies gas to the lower surface of the wafer W.

  The rotation holding unit 1031 is provided in the approximate center of the chamber 1020. A holding member 1311 that holds the wafer W from the side surface is provided on the upper surface of the rotation holding unit 1031. The wafer W is horizontally held by the holding member 1311 while being slightly separated from the upper surface of the rotation holding unit 1031.

  The substrate holding mechanism 1030 includes a driving mechanism 1312 including a motor and a belt that transmits the rotation of the motor to the rotation holding unit 1031. The rotation holding unit 1031 is rotated around the vertical axis by the drive mechanism 1312. Then, when the rotation holding unit 1031 rotates, the wafer W held by the rotation holding unit 1031 rotates integrally with the rotation holding unit 1031. The rotation holding unit 1031 is rotatably supported by the chamber 1020 and the recovery cup 1050 via a bearing 1313.

  The fluid supply unit 1032 is inserted through a hollow portion 1314 formed at the center of the rotation holding unit 1031. A flow path 1321 is formed inside the fluid supply unit 1032, and an N 2 supply source 1034 is connected to the flow path 1321 via a valve 1033. The fluid supply unit 1032 supplies N 2 gas supplied from the N 2 supply source 1034 to the lower surface of the wafer W via the valve 1033 and the flow path 1031.

  The N 2 gas supplied through the valve 1033 is a high-temperature (for example, about 90 ° C.) N 2 gas, and is used for volatilization promotion processing described later.

  When the substrate holding mechanism 1030 receives a wafer W from a substrate transfer device (not shown) in the load lock chamber 1013, the substrate holding mechanism 1030 is placed on the upper surface of the fluid supply unit 1032 in a state where the fluid supply unit 1032 is raised using a lifting mechanism (not shown). The wafer W is placed on the provided support pins (not shown). Thereafter, the substrate holding mechanism 1030 lowers the fluid supply unit 1032 to a predetermined position, and then transfers the wafer W to the holding member 1311 of the rotation holding unit 1031. In addition, when the processed wafer W is transferred to the substrate transfer apparatus 1111, the substrate holding mechanism 1030 raises the fluid supply unit 1032 using a lifting mechanism (not shown) and shows the wafer W held by the holding member 1311. Do not place on the support pins. Then, the substrate holding mechanism 1030 delivers the wafer W placed on support pins (not shown) to the substrate transfer apparatus 1111.

  The liquid supply unit 40_1 includes a nozzle 1041a, an arm 1042, and a swivel lifting mechanism 1043. A top coat liquid supply source 1045a is connected to the nozzle 1041a via a valve 1044a. The liquid supply unit 40_1 supplies the topcoat liquid from the nozzle 1041a.

  The collection cup 1050 is disposed so as to surround the rotation holding unit 1031 and collects the processing liquid scattered from the wafer W by the rotation of the rotation holding unit 1031. A drain port 1051 is formed at the bottom of the recovery cup 1050, and the processing liquid collected by the recovery cup 1050 is discharged from the drain port 1051 to the outside of the first liquid processing unit 1014. Further, an exhaust port 1052 for discharging the N 2 gas supplied from the fluid supply unit 1032 and the inert gas supplied from the FFU 1021 to the outside of the first liquid processing unit 1014 is formed at the bottom of the recovery cup 1050.

<Specific operation of substrate cleaning system>
Next, a specific operation of the substrate cleaning system 1001 will be described with reference to FIG. FIG. 12 is a flowchart showing a substrate cleaning process procedure according to the second embodiment. Each processing procedure shown in FIG. 12 is performed based on the control of the first control device 4A or the second control device 4.

  In the substrate cleaning system 1001 according to the second embodiment, the processes from the dry etching process (step S201) to the first carry-out process (step S204) shown in FIG. 12 are performed in the first processing apparatus 1002, and the substrate carry-in process ( Processes from step S205) to the second carry-out process (step S210) are performed in the second processing apparatus 1.

  As shown in FIG. 12, first, a dry etching process is performed in the dry etching unit 1012 (step S201). In the dry etching process, the dry etching unit 1012 performs dry etching or ashing on the wafer W. Thereby, the Cu wiring provided in the wafer W is exposed (see FIG. 6).

  Subsequently, the wafer W is carried into the first liquid processing unit 1014. Since this carrying-in process is performed via the load lock chamber 1013, oxidation of the exposed Cu wiring can be prevented.

  Subsequently, in the first liquid processing unit 1014, a film forming process liquid supply process is performed (step S202). In such a film forming process liquid supply process, the nozzle 1041a of the liquid supply unit 40_1 is positioned above the center of the wafer W. Thereafter, a top coat liquid, which is a film forming treatment liquid, is supplied from the nozzle 1041a to the main surface of the wafer W, which is a circuit formation surface on which a resist film is not formed.

  The top coat liquid supplied to the wafer W spreads on the main surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. As a result, a liquid film of the top coat liquid is formed on the entire main surface of the wafer W (see FIG. 7A).

  Subsequently, in the first liquid processing unit 1014, a drying process is performed (step S203). In such a drying process, for example, the top coat liquid is dried by increasing the rotation speed of the wafer W for a predetermined time. Thereby, the volatilization of the volatile components contained in the topcoat liquid is promoted, the topcoat liquid is solidified or cured, and a topcoat film is formed on the entire main surface of the wafer W.

  Subsequently, in the first liquid processing unit 1014, a first carry-out process is performed (step S204). In the first carry-out process, the substrate transfer device 1111 takes out the wafer W from the first liquid processing unit 1014, transfers it to the mounting unit 1010, and stores it in the carrier C mounted on the mounting unit 1010.

  At this time, the Cu wiring exposed on the wafer W is covered with the top coat film in a short time after dry etching. That is, since the Cu wiring is in a state of being cut off from the outside air, it is not adversely affected by oxidation or the like.

  Therefore, according to the substrate cleaning system 1001 according to the second embodiment, the time management for complying with the Q-time from the dry etching to the cleaning becomes unnecessary, so that the productivity can be improved.

  Subsequently, a substrate carry-in process is performed (step S205). In such a substrate carry-in process, the wafer W accommodated in the carrier C is transferred from the first processing apparatus 1002 to the carrier mounting unit 11 of the second processing apparatus 1. Thereafter, the wafer W is taken out of the carrier C by the substrate transfer device 121 (see FIG. 2) of the second processing apparatus 1 and transferred into the substrate cleaning device 14 via the delivery unit 122 and the substrate transfer device 131.

  Then, the wafer W carried into the chamber 20 is held by the holding member 311 of the substrate holding mechanism 30. At this time, the wafer W is held by the holding member 311 with the pattern forming surface facing upward. Thereafter, the rotation holding unit 31 is rotated by the drive unit. Thereby, the wafer W rotates together with the rotation holding unit 31 while being held horizontally by the rotation holding unit 31.

  Subsequently, the substrate cleaning apparatus 14 performs a stripping solution supply process (step S206). In such a peeling treatment liquid supply process, HFE which is a peeling treatment liquid is supplied from the nozzle 41 and the nozzle 52 to the topcoat film formed on the wafer W. The HFE supplied to the top coat film spreads on the top coat film by the centrifugal force accompanying the rotation of the wafer W (see FIG. 7B).

  The HFE penetrates into the top coat film and reaches the interface of the wafer W, penetrates the interface (pattern formation surface) of the wafer W, and peels the top coat film from the wafer W. As a result, the unwanted matter P adhering to the pattern forming surface of the wafer W is peeled off from the wafer W together with the top coat film (see FIG. 7C).

  Here, in the second embodiment, the unnecessary product P includes not only particles but also a reaction product generated by dry etching. When a CF-based gas is used in dry etching, this reaction product is a fluorine-containing compound and has a property of being soluble in, for example, HFE having a perfluoroalkyl group. In the state of FIG. 7C, most of the reaction products are separated from the wafer W due to the volume shrinkage of the top coat liquid, but may slightly remain on the wafer W. Even in such a case, when the above-described HFE is used, the HFE that has permeated and reached the interface of the wafer W can dissolve the slightly remaining reaction product. This effect is obtained not only with HFE but also with other fluorine-based solvents such as HFC.

  Subsequently, in the substrate cleaning apparatus 14, a dissolution processing liquid supply process is performed (step S207). In such dissolution processing liquid supply processing, IPA as the dissolution processing liquid is supplied from the nozzle 41 and the nozzle 51 to the top coat film peeled from the wafer W. Thereby, the top coat film is dissolved.

  Subsequently, the substrate cleaning apparatus 14 performs a rinsing process (step S208). In the rinsing process, the IPA having a relatively larger flow rate than the step S207 is supplied to the rotating wafer W from the nozzle 41 and the nozzle 51, so that the melted topcoat film and the unnecessary matter P floating in the IPA are obtained. Are removed from the wafer W together with the IPA.

  Subsequently, the substrate cleaning apparatus 14 performs a drying process (step S209). In such a drying process, for example, by increasing the rotational speed of the wafer W for a predetermined time, the IPA remaining on the surface of the wafer W is shaken off and the wafer W is dried. Thereafter, the rotation of the wafer W is stopped.

  Subsequently, in the substrate cleaning apparatus 14, a second substrate carry-out process is performed (step S210). In the second substrate carry-out process, the wafer W is taken out from the chamber 20 of the substrate cleaning device 14 by the substrate transfer device 131 (see FIG. 2).

  Thereafter, the wafer W is accommodated in the carrier C placed on the carrier placement unit 11 via the delivery unit 122 and the substrate transfer device 121. When the substrate carry-out process is completed, the substrate cleaning process for one wafer W is completed.

  As described above, the substrate cleaning system 1001 according to the second embodiment includes the first processing apparatus 1002 and the second processing apparatus 1 (substrate cleaning system 1). Then, after the film-forming treatment liquid is supplied by the film-forming treatment liquid supply unit (liquid supply unit 40_1) of the first processing apparatus 1002, the wafer W on which the topcoat solution is solidified or cured and the treatment film is formed is transferred to the carrier C. To be housed. And in the 2nd processing apparatus 1, the wafer W accommodated in the carrier C was taken out and the peeling process liquid was supplied. Thereby, in addition to the effect of 1st Embodiment, the effect of the improvement of productivity by relaxation of Q-time is acquired.

  In the second embodiment, the substrate to be processed is the wafer W after dry etching or ashing in which at least a part of the Cu wiring formed inside is exposed, but this is not restrictive, and other metal wiring is used. Even an exposed substrate is applicable. Further, the present invention is not limited to the metal wiring, but can be applied to a material that exposes a material that should be prevented from contacting oxygen, such as a Ge or III-V group material.

  In addition, the film-forming treatment liquid used in the first and second embodiments is not limited to the topcoat liquid having properties that can be actually applied in the lithography process, and FIGS. 1A to 1E and FIGS. 7A to 7E are used. Any liquid containing a polar organic material that has been optimized so that the actions such as solidification or curing, peeling, and dissolution described above can be performed accurately can be used.

W Wafer P Particle 1 Substrate cleaning system 4 Control device 14 Substrate cleaning device 30 Substrate holding mechanism 40 First liquid supply unit 50 Second liquid supply unit

Claims (13)

A film formation treatment liquid supply step for supplying a film formation treatment liquid containing a volatile component and containing a polar organic material for forming a film on the substrate;
A peeling treatment liquid supply step for supplying a peeling treatment liquid for peeling the treatment film from the substrate to a treatment film formed by solidifying or curing the film formation treatment liquid on the substrate by volatilization of the volatile component; ,
A dissolution treatment liquid supply step for supplying a dissolution treatment liquid for dissolving the treatment film with respect to the treatment film after the peeling treatment liquid supply step,
The stripping treatment liquid used in the stripping treatment liquid supply step is a nonpolar solvent that does not contain moisture, and the dissolution treatment liquid used in the dissolution processing solution supply step is a polar solvent that does not contain moisture.
And a substrate cleaning method.   The substrate cleaning method according to claim 1, wherein the film-forming treatment liquid is a liquid containing a synthetic resin that is a polar organic substance.   The substrate cleaning method according to claim 1, wherein the polar solvent includes at least one of alcohols, PGMEA, PGME, and MIBC.   The substrate cleaning method according to claim 1, wherein the nonpolar solvent includes a fluorine-based solvent.   5. The substrate cleaning method according to claim 4, wherein the nonpolar solvent includes at least one of HFE, HFC, HFO, and PFC.   The substrate cleaning method according to claim 1, wherein the substrate is made of a Ge or III-V group material.   The substrate cleaning method according to claim 1, wherein the substrate is made of a metal material.   In the film-forming treatment liquid supply step, while supplying the film-forming treatment liquid to the surface of the substrate, or after supplying the film-forming treatment liquid to the substrate, the periphery of the back surface of the substrate The substrate cleaning method according to claim 1, wherein the dissolution treatment liquid is supplied. After the film-forming treatment liquid supply step, an accommodating step of accommodating the substrate on which the film-forming treatment liquid is solidified or cured by volatilization of the volatile component and a treatment film is formed in a transfer container;
And a step of taking out the substrate after the film-forming treatment liquid supply step accommodated in the transfer container,
The peeling treatment liquid supply step includes
The substrate cleaning method according to claim 1, wherein the peeling treatment liquid is supplied to the substrate taken out in the taking out step. The film-forming treatment liquid supply step includes
The substrate cleaning method according to claim 9, wherein the film-forming treatment liquid is supplied to a substrate after dry etching or ashing in which at least a part of a metal wiring formed inside is exposed. The substrate cleaning method according to claim 10, wherein a CF-based gas is used in the dry etching, and the stripping treatment liquid is a fluorine-based solvent. The treatment film is removed from the substrate with respect to the treatment film formed by solidifying or curing the film formation treatment liquid on the substrate by volatilization of the volatile component on the substrate supplied with the film formation treatment liquid containing a volatile component. A peeling treatment liquid supply section for supplying a peeling treatment liquid to be peeled;
A dissolution treatment liquid supply unit for supplying a dissolution treatment liquid for dissolving the treatment film with respect to the treatment film,
The stripping treatment liquid supplied in the stripping treatment liquid supply unit is a nonpolar solvent not containing moisture, and the dissolution processing liquid used in the dissolution processing solution supply unit is a polar solvent not containing water,
A substrate cleaning system. A computer-readable storage medium that operates on a computer and stores a program for controlling the substrate cleaning system,
A storage medium characterized in that, when executed, the program causes a computer to control the substrate cleaning system so that the substrate cleaning method according to any one of claims 1 to 11 is performed.

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