TWI700133B - Substrate cleaning method, substrate cleaning system and memory medium - Google Patents

Substrate cleaning method, substrate cleaning system and memory medium Download PDF

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TWI700133B
TWI700133B TW106115657A TW106115657A TWI700133B TW I700133 B TWI700133 B TW I700133B TW 106115657 A TW106115657 A TW 106115657A TW 106115657 A TW106115657 A TW 106115657A TW I700133 B TWI700133 B TW I700133B
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substrate
film
treatment liquid
wafer
substrate cleaning
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TW201808474A (en
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関口賢治
菅野至
相原明徳
立花康三
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking
    • H01L2924/35121—Peeling or delaminating

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

不會對由與水反應而引起溶解或腐蝕之材料所構成的基板之表面帶來影響，而去除附著於基板的不要物。 It does not affect the surface of the substrate made of materials that react with water to cause dissolution or corrosion, and remove unnecessary objects attached to the substrate.

實施形態之基板處理方法，係包含有成膜處理液供給工程、剝離處理液供給工程及溶解處理液供給工程。成膜處理液供給工程，係將包含有揮發成分而用以在基板上形成膜的成膜處理液供給至基板。剝離處理液供給工程，係對藉由揮發成分產生揮發而成膜處理液在基板上固化或硬化而成的處理膜，供給使處理膜從基板剝離的剝離處理液。溶解處理液供給工程，係在剝離處理液供給工程後，對處理膜供給使處理膜溶解的溶解處理液。在此，成膜處理液，係含有極性有機物，剝離處理液，係不含有水分的非極性溶媒，溶解處理液，係不含有水分的極性溶媒。 The substrate processing method of the embodiment includes a film-forming processing liquid supply process, a peeling processing liquid supply process, and a dissolution processing liquid supply process. The film formation treatment liquid supply process is to supply the film formation treatment liquid containing volatile components to form a film on the substrate to the substrate. The peeling treatment liquid supply process is to supply a peeling treatment liquid for peeling the treatment film from the substrate to the treatment film formed by curing or hardening the film treatment liquid on the substrate by volatilization of volatile components. The dissolution treatment liquid supply process is the process of supplying the treatment film with the dissolution treatment liquid that dissolves the treatment film after the removal treatment liquid supply process. Here, the film-forming treatment liquid contains a polar organic substance, the peeling treatment liquid is a non-polar solvent containing no moisture, and the dissolving treatment liquid is a polar solvent containing no moisture.

Description

基板洗淨方法、基板洗淨系統及記憶媒體 Substrate cleaning method, substrate cleaning system and memory medium

所揭示之實施形態，係關於基板洗淨方法、基板洗淨系統及記憶媒體。 The disclosed embodiment relates to a substrate cleaning method, a substrate cleaning system and a memory medium.

以往，已知一種進行去除附著於矽晶圓或化合物半導體晶圓等之基板的微粒之基板洗淨裝置。在專利文獻1所揭示的基板洗淨方法中，係將包含有揮發成分而用以在基板上形成膜的成膜處理液供給至基板，並對藉由揮發成分產生揮發而成膜處理液在基板上固化或硬化而成的處理膜，供給使處理膜從基板剝離的剝離處理液，其後，對處理膜供給使處理膜溶解的溶解處理液，藉此，不會對基板之表面帶來影響，而去除附著於基板之粒徑小的不要物。 Conventionally, there is known a substrate cleaning device that removes particles attached to a substrate such as a silicon wafer or a compound semiconductor wafer. In the substrate cleaning method disclosed in Patent Document 1, a film-forming treatment liquid containing volatile components for forming a film on a substrate is supplied to the substrate, and the film-forming treatment liquid is vaporized by the volatile components. The treatment film cured or hardened on the substrate is supplied with a peeling treatment liquid for peeling the treatment film from the substrate, and then a dissolving treatment liquid for dissolving the treatment film is supplied to the treatment film, thereby avoiding damage to the surface of the substrate. Affect, and remove unnecessary objects with small particle size attached to the substrate.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2015-119164號公報 [Patent Document 1] JP 2015-119164 A

然而，專利文獻1之基板洗淨方法，係使用包含有水分的剝離處理液與溶解處理液，無法應用於由有可能與水反應而溶解之Ge(鍺)或III-V族等之材料所構成的基板。又，亦無法應用於由有可能與水反應而腐蝕之磁性隨機存取記憶體之金屬材料所構成的基板。 However, the substrate cleaning method of Patent Document 1 uses a stripping treatment solution and a dissolution treatment solution that contain moisture, and cannot be applied to Ge (germanium) or III-V group materials that may react with water to dissolve. Composition of the substrate. In addition, it cannot be applied to a substrate made of a metal material of a magnetic random access memory that may react with water and corrode.

實施形態之一態樣，係以提供一種不會對由與水反應而引起溶解或腐蝕之材料所構成的基板之表面帶來影響，而可去除附著於基板的不要物之基板洗淨方法、基板洗淨系統及記憶媒體為目的。 One aspect of the embodiment is to provide a substrate cleaning method that does not affect the surface of a substrate composed of a material that reacts with water to cause dissolution or corrosion, and can remove unnecessary objects attached to the substrate. The substrate cleaning system and memory media are for the purpose.

實施形態之一態樣的基板洗淨方法，係包含有：成膜處理液供給工程，將包含有揮發成分而用以在基板上形成膜的成膜處理液供給至前述基板；剝離處理液供給工程，對藉由前述揮發成分產生揮發而前述成膜處理液在前述基板上固化或硬化而成的處理膜，供給使該處理膜從前述基板剝離的剝離處理液；及溶解處理液供給工程，在前述剝離處理液供給工程後，對前述處理膜供給使該處理膜溶解的溶解處理液，在前述剝離處理液供給工程中所使用的剝離處理液，係不含有水分的非極性溶媒，在前述溶解處理液供給工程中所使用的溶解處理液，係不含有水分的極性溶媒。 A substrate cleaning method of one aspect of the embodiment includes: a film-forming treatment liquid supply process, supplying a film-forming treatment liquid containing volatile components for forming a film on a substrate to the substrate; supplying a stripping treatment liquid The process of supplying a stripping process liquid for peeling the process film from the substrate to the processing film formed by the volatile component volatilizing and the film-forming process liquid solidified or hardened on the substrate; and the process of supplying the dissolving process liquid, After the stripping treatment liquid supply process, the dissolution treatment liquid that dissolves the treatment film is supplied to the treatment film. The stripping treatment liquid used in the stripping treatment liquid supply process is a non-polar solvent that does not contain moisture. The dissolution treatment liquid used in the dissolution treatment liquid supply process is a polar solvent that does not contain water.

實施形態之一態樣，係不會對由與水反應而引起溶解或腐蝕之材料所構成的基板之表面帶來影響，而可去除附著於基板的不要物。 One aspect of the embodiment does not affect the surface of a substrate made of a material that reacts with water to cause dissolution or corrosion, and it is possible to remove unnecessary objects attached to the substrate.

W‧‧‧晶圓 W‧‧‧wafer

P‧‧‧微粒 P‧‧‧Particle

1‧‧‧基板洗淨系統 1‧‧‧Substrate cleaning system

4‧‧‧控制裝置 4‧‧‧Control device

14‧‧‧基板洗淨裝置 14‧‧‧Substrate cleaning device

30‧‧‧基板保持機構 30‧‧‧Substrate holding mechanism

40‧‧‧第1液供給部 40‧‧‧First liquid supply part

50‧‧‧第2液供給部 50‧‧‧Second liquid supply part

[圖1A]圖1A，係第1實施形態之基板洗淨方法的說明圖。 [Fig. 1A] Fig. 1A is an explanatory diagram of the substrate cleaning method of the first embodiment.

[圖1B]圖1B，係第1實施形態之基板洗淨方法的說明圖。 [Fig. 1B] Fig. 1B is an explanatory diagram of the substrate cleaning method of the first embodiment.

[圖1C]圖1C，係第1實施形態之基板洗淨方法的說明圖。 [Fig. 1C] Fig. 1C is an explanatory diagram of the substrate cleaning method of the first embodiment.

[圖1D]圖1D，係第1實施形態之基板洗淨方法的說明圖。 [Fig. 1D] Fig. 1D is an explanatory diagram of the substrate cleaning method of the first embodiment.

[圖1E]圖1E，係第1實施形態之基板洗淨方法的說明圖。 [Fig. 1E] Fig. 1E is an explanatory diagram of the substrate cleaning method of the first embodiment.

[圖2]圖2，係表示第1實施形態之基板洗淨系統之構成的示意圖。 [Fig. 2] Fig. 2 is a schematic diagram showing the configuration of the substrate cleaning system of the first embodiment.

[圖3]圖3，係表示第1實施形態之基板洗淨裝置之構成的示意圖。 [Fig. 3] Fig. 3 is a schematic diagram showing the configuration of the substrate cleaning device of the first embodiment.

[圖4]圖4，係表示第1實施形態之基板洗淨裝置所執行之基板洗淨處理之處理步驟的流程圖。 [Fig. 4] Fig. 4 is a flowchart showing a processing procedure of a substrate cleaning process performed by the substrate cleaning apparatus of the first embodiment.

[圖5A]圖5A，係第1基板洗淨裝置的動作說明圖。 [Fig. 5A] Fig. 5A is an operation explanatory diagram of the first substrate cleaning device.

[圖5B]圖5B，係第1基板洗淨裝置的動作說明圖。 [Fig. 5B] Fig. 5B is an explanatory diagram of the operation of the first substrate cleaning device.

[圖5C]圖5C，係第1基板洗淨裝置的動作說明圖。 [Fig. 5C] Fig. 5C is an operation explanatory diagram of the first substrate cleaning device.

[圖5D]圖5D，係第1基板洗淨裝置的動作說明圖。 [Fig. 5D] Fig. 5D is an operation explanatory diagram of the first substrate cleaning device.

[圖6]圖6，係表示第2實施形態之晶圓之構成的示意圖。 [Fig. 6] Fig. 6 is a schematic diagram showing the structure of a wafer in a second embodiment.

[圖7A]圖7A，係第2實施形態之基板洗淨方法的說明圖。 [Fig. 7A] Fig. 7A is an explanatory diagram of the substrate cleaning method of the second embodiment.

[圖7B]圖7B，係第2實施形態之基板洗淨方法的說明圖。 [Fig. 7B] Fig. 7B is an explanatory diagram of the substrate cleaning method of the second embodiment.

[圖7C]圖7C，係第2實施形態之基板洗淨方法的說明圖。 [Fig. 7C] Fig. 7C is an explanatory diagram of the substrate cleaning method of the second embodiment.

[圖7D]圖7D，係第2實施形態之基板洗淨方法的說明圖。 [Fig. 7D] Fig. 7D is an explanatory diagram of the substrate cleaning method of the second embodiment.

[圖7E]圖7E，係第2實施形態之基板洗淨方法的說明圖。 [Fig. 7E] Fig. 7E is an explanatory diagram of the substrate cleaning method of the second embodiment.

[圖8]圖8，係表示第2實施形態之基板洗淨系統之概略構成的示意圖。 [Fig. 8] Fig. 8 is a schematic diagram showing a schematic configuration of a substrate cleaning system of a second embodiment.

[圖9]圖9，係表示第2實施形態之第1處理裝置之概略構成的示意圖。 [Fig. 9] Fig. 9 is a schematic diagram showing a schematic configuration of the first processing device of the second embodiment.

[圖10]圖10，係表示第2實施形態之乾蝕刻單元之構成之一例的示意圖。 [Fig. 10] Fig. 10 is a schematic diagram showing an example of the structure of the dry etching unit of the second embodiment.

[圖11]圖11，係表示第2實施形態之第1液處理單元之構成之一例的示意圖。 [Fig. 11] Fig. 11 is a schematic diagram showing an example of the configuration of the first liquid treatment unit of the second embodiment.

[圖12]圖12，係表示第2實施形態之基板洗淨之處理 步驟的流程圖。 [Fig. 12] Fig. 12 shows the substrate cleaning process of the second embodiment Flow chart of the steps.

以下，參閱添附圖面，詳細地說明本申請案所揭示之基板洗淨方法、基板洗淨系統及記憶媒體的實施形態。另外，該發明並不受以下所示的實施形態所限定。 Hereinafter, referring to the attached drawings, the embodiments of the substrate cleaning method, substrate cleaning system, and memory medium disclosed in this application will be described in detail. In addition, this invention is not limited by embodiment shown below.

(第1實施形態) (First Embodiment) <基板洗淨方法的內容> <Contents of substrate cleaning method>

首先，使用圖1A~圖1E，說明關於第1實施形態之基板洗淨方法的內容。圖1A~圖1E，係第1實施形態之基板洗淨方法的說明圖。 First, the contents of the substrate cleaning method of the first embodiment will be described using FIGS. 1A to 1E. 1A to 1E are explanatory diagrams of the substrate cleaning method of the first embodiment.

如圖1A所示，在第1實施形態之基板洗淨方法中，係對矽晶圓或化合物半導體晶圓等之基板(以下，記載為「晶圓W」)的圖案形成面，供給包含有揮發成分而用以在晶圓W上形成膜的處理液(以下，記載為「成膜處理液」)。 As shown in FIG. 1A, in the substrate cleaning method of the first embodiment, the patterned surface of a substrate such as a silicon wafer or a compound semiconductor wafer (hereinafter referred to as "wafer W") is supplied with A processing liquid used to form a film on the wafer W (hereinafter referred to as "film formation processing liquid") for volatile components.

供給至晶圓W的圖案形成面的成膜處理液，係一面引起揮發成分的揮發所致之體積收縮，一面固化或硬化而成為處理膜。藉此，形成於晶圓W上的圖案或附著於圖案的微粒P便成為被該處理膜所覆蓋的狀態(參照圖1B)。另外，在此所稱之「固化」係意味進行固體化，而「硬化」係意味分子彼此產生連結而進行高分子化者(例如交聯或聚合等)。 The film-forming processing liquid supplied to the pattern forming surface of the wafer W causes volume shrinkage due to the volatilization of volatile components, and solidifies or hardens to become a processing film. Thereby, the pattern formed on the wafer W or the particles P attached to the pattern are covered by the processing film (see FIG. 1B). In addition, the term "curing" as used herein means solidification, and "hardening" means that molecules are linked to each other to be polymerized (for example, crosslinking or polymerization).

接著，如圖1B所示，對晶圓W上的處理膜供給剝離處理液。剝離處理液，係使前述的處理膜從晶圓W剝離的處理液。 Next, as shown in FIG. 1B, a peeling treatment liquid is supplied to the treatment film on the wafer W. The peeling processing liquid is a processing liquid for peeling the aforementioned processing film from the wafer W.

具體而言，在供給至處理膜上後，浸透於處理膜中而到達至晶圓W的界面。到達至晶圓W之界面的剝離處理液，係浸透於晶圓W之界面即圖案形成面。 Specifically, after being supplied to the processing film, it penetrates into the processing film and reaches the interface of the wafer W. The peeling treatment liquid that has reached the interface of the wafer W penetrates the interface of the wafer W, that is, the pattern formation surface.

如此一來，藉由剝離處理液浸入於晶圓W與處理膜之間的方式，處理膜，係以「膜」的狀態，從晶圓W剝離，伴隨於此，附著於圖案形成面的微粒P則與處理膜一起從晶圓W剝離(參照圖1C)。 In this way, by immersing the processing liquid between the wafer W and the processing film, the processing film is peeled from the wafer W in a "film" state, and with this, particles adhering to the pattern formation surface P is peeled from the wafer W together with the processing film (see FIG. 1C).

另外，成膜處理液，係可藉由因伴隨著揮發成分的揮發之體積收縮而產生的應變(拉引力)，從圖案等拉離附著於圖案等的微粒P。 In addition, the film-forming treatment liquid is capable of pulling away the fine particles P attached to the pattern etc. from the pattern etc. by the strain (drawing force) caused by the volume shrinkage accompanying the volatilization of the volatile component.

接著，從晶圓W所剝離之處理膜供給使處理膜溶解的溶解處理液。藉此，處理膜便溶解，進入至處理膜的微粒P，係成為浮游於溶解處理液中的狀態(參照圖1D)。其後，以純水等沖洗溶解處理液或已溶解的處理膜，藉此，微粒P從晶圓W上被去除(參閱圖1E)。 Next, a dissolution treatment solution that dissolves the treatment film is supplied from the treatment film peeled from the wafer W. Thereby, the treatment film is dissolved, and the particles P entering the treatment film are in a state of floating in the dissolution treatment liquid (see FIG. 1D). Thereafter, the processing solution or the dissolved processing film is rinsed with pure water or the like, whereby the particles P are removed from the wafer W (see FIG. 1E).

如此一來，在第1實施形態之基板洗淨方法中，係以「膜」的狀態使形成於晶圓W上的處理膜從晶圓W剝離，藉此，將附著於圖案等的微粒P與處理膜一起從晶圓W去除。 In this way, in the substrate cleaning method of the first embodiment, the processing film formed on the wafer W is peeled off from the wafer W in a "film" state, thereby removing the particles P attached to the pattern and the like. It is removed from the wafer W together with the processing film.

因此，根據第1實施形態之基板洗淨方法，由於未利用化學性作用而進行微粒去除，因此，可抑制蝕刻 作用等所致之基底膜的侵蝕。 Therefore, according to the substrate cleaning method of the first embodiment, since the particle removal is not performed by chemical action, etching can be suppressed. Corrosion of the basement membrane caused by the effect.

又，根據第1實施形態之基板洗淨方法，與利用了以往之物理力的基板洗淨方法相比，由於可藉由較弱的力來去除微粒P，因此，亦可抑制圖案倒毀。 Furthermore, according to the substrate cleaning method of the first embodiment, compared with the conventional substrate cleaning method using physical force, since the particles P can be removed with a weaker force, it is also possible to suppress pattern collapse.

而且，根據第1實施形態之基板洗淨方法，在利用了以往之物理力的基板洗淨方法中，係可輕易地去除難以去除之粒子徑小的微粒P。 Furthermore, according to the substrate cleaning method of the first embodiment, in the substrate cleaning method using conventional physical forces, it is possible to easily remove the particles P with small particle diameters that are difficult to remove.

另外，在第1實施形態之基板洗淨方法中，處理膜，係在成膜於晶圓W後，不進行圖案曝光而從晶圓W被全部去除。因此，洗淨後之晶圓W，係成為塗佈成膜處理液之前的狀態，亦即露出了圖案形成面的狀態。 In addition, in the substrate cleaning method of the first embodiment, the processing film is completely removed from the wafer W after being formed on the wafer W without pattern exposure. Therefore, the cleaned wafer W is in the state before the film formation treatment liquid is applied, that is, the pattern formation surface is exposed.

在第1實施形態中，係使用面塗層液作為成膜處理液。面塗層液固化或硬化後的面塗層膜，係為了防止液浸液滲入光阻而塗佈於光阻上面的保護膜。 In the first embodiment, a top coat liquid is used as the film formation treatment liquid. The topcoat film cured or hardened by the topcoat liquid is a protective film coated on the photoresist to prevent the liquid immersion liquid from penetrating into the photoresist.

又，液浸液，係例如使用於在微影工程中之液浸曝光的液體。另外，面塗層液，係包含具有在固化或硬化之際體積收縮之性質的丙烯酸樹脂。 In addition, the liquid immersion liquid is, for example, a liquid used for liquid immersion exposure in the lithography process. In addition, the top coat liquid contains an acrylic resin that has the property of shrinking in volume during curing or hardening.

藉此，不僅揮發成分之揮發，由於藉由丙烯酸樹脂之硬化收縮，亦會引起體積收縮，因此，與僅包含有揮發成分的成膜處理液相比，體積收縮率大且可強力地拉離微粒P。 As a result, not only the volatilization of volatile components, but also the volume shrinkage caused by the hardening and shrinkage of the acrylic resin, the volume shrinkage rate is higher than that of the film-forming treatment solution containing only volatile components and can be pulled away strongly Particle P.

尤其，丙烯酸樹脂，係與環氧樹脂等的其他樹脂相比，由於體積收縮率大，因此，對於在微粒P賦予拉引力該點而言，面塗層液為有效。又，不一定要利用微 影工程中所使用的面塗層液其本身，而為了使體積收縮所致之拉引力或來自基板的剝離性能提升，亦可利用將其他藥液添加至微影工程中所使用之面塗層液的液體。 In particular, acrylic resins have a larger volume shrinkage rate than other resins such as epoxy resins. Therefore, the top coat liquid is effective at the point of imparting tensile force to the fine particles P. Also, it is not necessary to use micro The top coat liquid used in the photolithography process itself, and in order to improve the pull force caused by the volume shrinkage or the peeling performance from the substrate, you can also use other chemicals to be added to the top coat used in the photolithography process Liquid liquid.

在專利文獻1中，係使用DIW作為剝離處理液，且使用鹼性水溶液作為溶解處理液。然而，根據形成晶圓W之表面的材料，係無法使用包含有水分的處理液。作為像這樣的材料，有例如GE或III-V族等，該種類的材料會與水反應而溶解。又，亦有MRAM、PCRAM、ReRAM等之磁性隨機存取記憶體的金屬材料，該種類的材料亦會與水反應而腐蝕。 In Patent Document 1, DIW is used as a peeling treatment liquid, and an alkaline aqueous solution is used as a dissolution treatment liquid. However, depending on the material forming the surface of the wafer W, a processing liquid containing moisture cannot be used. As such materials, there are, for example, GE, III-V group, etc., and such materials react with water to dissolve. In addition, there are also metal materials for magnetic random access memory such as MRAM, PCRAM, and ReRAM, and this type of material will also react with water and corrode.

在第1實施形態中，係使用不含有水分而不會對由上述材料所構成的晶圓W引起溶解或腐蝕這樣之反應的有機溶媒，來代替含有水分的溶媒。又，由於晶圓W上的面塗層膜，係由極性有機物即丙烯酸樹脂所構成，因此，剝離處理液，係使用不溶解面塗層膜的非極性溶媒，溶解處理液，係使用溶解面塗層膜的極性溶媒。 In the first embodiment, an organic solvent that does not contain moisture and does not cause a reaction such as dissolution or corrosion of the wafer W made of the above-mentioned material is used instead of a solvent containing moisture. In addition, since the top coat film on the wafer W is composed of a polar organic substance, that is, acrylic resin, the stripping treatment liquid uses a non-polar solvent that does not dissolve the top coat film to dissolve the treatment liquid and uses a dissolving surface. Polar solvent for coating film.

另外，一般而言，極性物質，係易溶解極性物質，非極性物質，係易溶解非極性物質，極性物質與非極性物質，係具有相互難以溶解的性質。又，由於非極性物質之處理液，係不受限於表面狀態而浸濕性良好，因此，即便晶圓W之表面為疏水性，亦能凝集於表面與膜的界面而將膜剝離。 In addition, generally speaking, polar substances are easily soluble polar substances, non-polar substances are easily soluble non-polar substances, and polar substances and non-polar substances have the property of being difficult to dissolve each other. In addition, since the treatment liquid of non-polar substances is not limited to the surface state and has good wettability, even if the surface of the wafer W is hydrophobic, it can aggregate at the interface between the surface and the film to peel the film.

具體而言，作為剝離處理液，可使用例如非極性溶媒即HFE(氫氟醚)、HFC(氫氟碳)、HFO(氫 氟烯烴)、PFC(全氟碳化物)等這樣的氟系之溶媒中的至少1個溶媒。 Specifically, as the stripping treatment liquid, for example, non-polar solvents such as HFE (hydrofluoroether), HFC (hydrofluorocarbon), HFO (hydrogen At least one solvent among fluorine-based solvents such as fluoroolefin) and PFC (perfluorocarbon).

又，作為溶解處理液，可使用例如極性溶媒即醇類(例如IPA)、PGME(丙二醇甲醚丙酸酯)、PGMEA(醋酸丙二醇甲醚酯)、MIBC(4-甲基-2-戊醇)等中的至少1個溶媒。 In addition, as the dissolution treatment liquid, for example, polar solvents such as alcohols (for example, IPA), PGME (propylene glycol methyl ether propionate), PGMEA (propylene glycol methyl ether acetate), MIBC (4-methyl-2-pentanol) ) At least one solvent among others.

雖然不限於以上，但可藉由使用由該些例示之溶媒所構成的剝離處理液及溶解處理液之方式，不會對晶圓W之表面帶來溶解或腐蝕這樣的影響而進行洗淨處理。 Although it is not limited to the above, it is possible to perform the cleaning process without dissolving or corroding the surface of the wafer W by using the stripping treatment liquid and the dissolving treatment liquid composed of the exemplified solvents. .

<基板洗淨系統之構成> <Composition of Substrate Cleaning System>

其次，使用圖2，說明關於第1實施形態之基板洗淨系統的構成。圖2，係表示第1實施形態之基板洗淨系統之構成的示意圖。另外，在以下中，為了明確位置關係而規定相互正交之X軸、Y軸及Z軸，並將Z軸正方向設成為垂直向上方向。 Next, using FIG. 2, the structure of the substrate cleaning system of the first embodiment will be described. Fig. 2 is a schematic diagram showing the configuration of the substrate cleaning system of the first embodiment. In addition, in the following, in order to clarify the positional relationship, the X-axis, the Y-axis, and the Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is assumed to be a vertical upward direction.

如圖2所示，基板洗淨系統1，係具備有搬入搬出站2與處理站3。搬入搬出站2與處理站3，係鄰接設置。 As shown in FIG. 2, the substrate cleaning system 1 is provided with a carry-in/out station 2 and a processing station 3. The moving in/out station 2 and the processing station 3 are adjacently installed.

搬入搬出站2，係具備有載體載置部11與搬送部12。在載體載置部11，係載置有能以水平狀態收容複數片晶圓W的複數個搬送容器(以下，記載為「載體C」)。 The carry-in and carry-out station 2 is provided with a carrier placing part 11 and a conveying part 12. In the carrier mounting portion 11, a plurality of transport containers (hereinafter, referred to as "carrier C") capable of accommodating a plurality of wafers W in a horizontal state are mounted.

搬送部12，係鄰接設置於載體載置部11。在搬送部12的內部，係設置有基板搬送裝置121與收授部122。 The conveying part 12 is provided adjacent to the carrier placing part 11. Inside the conveying unit 12, a substrate conveying device 121 and a receiving unit 122 are provided.

基板搬送裝置121，係具備有保持晶圓W的晶圓保持機構。又，基板搬送裝置121，係能朝水平方向及垂直方向移動和以垂直軸為中心旋轉，使用晶圓保持機構，在載體C與收授部122之間進行晶圓W的搬送。 The substrate transfer device 121 is provided with a wafer holding mechanism that holds the wafer W. In addition, the substrate transfer device 121 is capable of moving in the horizontal and vertical directions and rotating around the vertical axis, and uses a wafer holding mechanism to transfer the wafer W between the carrier C and the receiving unit 122.

處理站3，係鄰接設置於搬送部12。處理站3，係具備有搬送部13與複數個基板洗淨裝置14。複數個基板洗淨裝置14，係並排設置於搬送部13的兩側。 The processing station 3 is provided adjacent to the conveying part 12. The processing station 3 is provided with a conveying unit 13 and a plurality of substrate cleaning devices 14. A plurality of substrate cleaning devices 14 are arranged side by side on both sides of the conveying unit 13.

搬送部13，係在內部具備有基板搬送裝置131。基板搬送裝置131，係具備有保持晶圓W的晶圓保持機構。又，基板搬送裝置131，係能朝水平方向及垂直方向移動和以垂直軸為中心旋轉，使用晶圓保持機構，在收授部122與基板洗淨裝置14之間進行晶圓W的搬送。 The transport unit 13 includes a substrate transport device 131 inside. The substrate transport device 131 is equipped with a wafer holding mechanism that holds the wafer W. In addition, the substrate transfer device 131 is capable of moving in the horizontal and vertical directions and rotating around the vertical axis, and uses a wafer holding mechanism to transfer the wafer W between the receiving unit 122 and the substrate cleaning device 14.

基板洗淨裝置14，係依據上述之基板洗淨方法而執行基板洗淨處理的裝置。後述，係說明關於該基板洗淨裝置14的具體構成。 The substrate cleaning device 14 is a device that performs substrate cleaning processing according to the above-mentioned substrate cleaning method. The following description explains the specific configuration of the substrate cleaning device 14.

又，基板洗淨系統1，係具備有控制裝置4。控制裝置4，係控制基板洗淨系統1之動作的裝置。該控制裝置4，係例如為電腦，具備有控制部15與記憶部16。記憶部16，係儲存有控制基板洗淨處理等之各種處理的程式。控制部15，係藉由讀出並執行記憶於記憶部16之程式的方式，控制基板洗淨系統1的動作。 In addition, the substrate cleaning system 1 includes a control device 4. The control device 4 is a device that controls the operation of the substrate cleaning system 1. The control device 4 is, for example, a computer, and includes a control unit 15 and a storage unit 16. The storage unit 16 stores programs for controlling various processing such as substrate cleaning processing. The control unit 15 controls the operation of the substrate cleaning system 1 by reading and executing a program stored in the memory unit 16.

另外，該程式，係亦可為記錄於能藉由電腦而讀取的記憶媒體者，且亦可為從其記憶媒體安裝於控制裝置4的記憶部16者。作為能藉由電腦讀取的記憶媒體，係有例如硬碟(HD)、軟碟片(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。 In addition, the program may be recorded in a storage medium that can be read by a computer, and may be installed in the storage unit 16 of the control device 4 from the storage medium. As a storage medium that can be read by a computer, there are, for example, hard disk (HD), floppy disk (FD), compact disk (CD), magneto-optical disk (MO), memory card, etc.

在如上述般所構成的基板洗淨系統1中，係首先，搬入搬出站2之基板搬送裝置121從載體C取出晶圓W，將取出的晶圓W載置於收授部122。載置於收授部122的晶圓W，係從收授部122被處理站3的基板搬送裝置131取出而搬入至基板洗淨裝置14，藉由基板洗淨裝置14施加基板洗淨處理。洗淨後的晶圓W，係在從基板洗淨裝置14被基板搬送裝置131搬出而載置於收授部122後，藉由基板搬送裝置121返回至載體C。 In the substrate cleaning system 1 configured as described above, first, the substrate transport device 121 of the carry-in/out station 2 takes out the wafer W from the carrier C, and places the taken-out wafer W on the receiving unit 122. The wafer W placed on the receiving unit 122 is taken out from the receiving unit 122 by the substrate transfer device 131 of the processing station 3 and transferred to the substrate cleaning device 14, and the substrate cleaning device 14 applies substrate cleaning processing. The cleaned wafer W is carried out from the substrate cleaning device 14 by the substrate transfer device 131 and placed in the receiving section 122, and then returned to the carrier C by the substrate transfer device 121.

<基板洗淨裝置之構成> <Construction of substrate cleaning device>

其次，參閱圖3，說明關於基板洗淨裝置14的構成。圖3，係表示第1實施形態之基板洗淨裝置14之構成的示意圖。 Next, referring to FIG. 3, the structure of the substrate cleaning device 14 will be described. FIG. 3 is a schematic diagram showing the structure of the substrate cleaning device 14 of the first embodiment.

如圖3所示，基板洗淨裝置14，係具備有腔室20、基板保持機構30、第1液供給部40、第2液供給部50及回收罩杯60。 As shown in FIG. 3, the substrate cleaning device 14 includes a chamber 20, a substrate holding mechanism 30, a first liquid supply part 40, a second liquid supply part 50, and a recovery cup 60.

腔室20，係收容有基板保持機構30、第1液供給部40、第2液供給部50及回收罩杯60。在腔室20的頂部，係設置有FFU(Fan Filter Unit)21。FFU21，係在腔 室20內形成下降流。 The chamber 20 houses a substrate holding mechanism 30, a first liquid supply unit 40, a second liquid supply unit 50, and a recovery cup 60. On the top of the chamber 20, an FFU (Fan Filter Unit) 21 is provided. FFU21, tied in the cavity A downward flow is formed in the chamber 20.

FFU21，係經由閥22連接於下降流氣體供給源23。FFU21，係將從下降流氣體供給源23所供給的下降流氣體(例如，乾空氣)吐出至腔室20內。 The FFU 21 is connected to a downflow gas supply source 23 via a valve 22. The FFU 21 discharges the downflow gas (for example, dry air) supplied from the downflow gas supply source 23 into the chamber 20.

基板保持機構30，係具備有旋轉保持部31、支柱部32及未圖示的驅動部。旋轉保持部31，係設置於腔室20的大致中央。在旋轉保持部31的上面，係設置有從側面保持晶圓W的保持構件311。晶圓W，係在些許離開旋轉保持部31之上面的狀態下，藉由該保持構件311而水平保持。 The substrate holding mechanism 30 includes a rotation holding portion 31, a support portion 32, and a driving portion not shown. The rotation holding portion 31 is provided in the approximate center of the chamber 20. On the upper surface of the rotation holding portion 31, a holding member 311 for holding the wafer W from the side is provided. The wafer W is held horizontally by the holding member 311 in a state slightly separated from the upper surface of the rotation holding portion 31.

支柱部32，係往垂直方向延伸的構件，基端部藉由驅動部33而可旋轉地支持，在前端部中，水平地支撐旋轉保持部31。 The pillar portion 32 is a member extending in the vertical direction. The base end portion is rotatably supported by the driving portion 33, and the front end portion supports the rotation holding portion 31 horizontally.

該基板保持機構30，係藉由使支柱部32旋轉的方式，使支撐於支柱部32的旋轉保持部31旋轉，藉此，使保持於旋轉保持部31的晶圓W旋轉。 The substrate holding mechanism 30 rotates the rotation holding portion 31 supported by the pillar portion 32 by rotating the pillar portion 32, thereby rotating the wafer W held by the rotation holding portion 31.

第1液供給部40，係對保持於基板保持機構30之晶圓W的上面供給各種處理液。該第1液供給部40，係具備有：噴嘴41；支臂42，水平地支撐噴嘴41；及旋轉升降機構43，使支臂42旋轉及升降。 The first liquid supply unit 40 supplies various processing liquids to the upper surface of the wafer W held by the substrate holding mechanism 30. The first liquid supply unit 40 is provided with a nozzle 41; a support arm 42 that supports the nozzle 41 horizontally; and a rotation raising and lowering mechanism 43 that rotates and raises the support arm 42.

噴嘴41，係經由閥44a~44c，分別連接於面塗層液供給源45a、剝離處理液供給源45c及溶解處理液供給源45c。在第1實施形態中，使用非極性溶媒的1個即HFE作為剝離處理液。又，使用極性溶媒的1個即IPA作為 溶解處理液。 The nozzle 41 is connected to a topcoat liquid supply source 45a, a peeling treatment liquid supply source 45c, and a dissolution treatment liquid supply source 45c via valves 44a to 44c, respectively. In the first embodiment, HFE, which is one of the non-polar solvents, is used as the peeling treatment liquid. Also, use one of the polar solvents, IPA, as Dissolve the treatment liquid.

第1液供給部40，係如上述般而構成，對晶圓W供給面塗層液、剝離處理液或溶解處理液。 The first liquid supply unit 40 is configured as described above, and supplies the top coat liquid, the peeling treatment liquid, or the dissolution treatment liquid to the wafer W.

第2液供給部50，係對保持於基板保持機構30之晶圓W的背面供給各種處理液。該第2液供給部50，係具備有噴嘴51、噴嘴52及軸部53。 The second liquid supply unit 50 supplies various processing liquids to the back surface of the wafer W held by the substrate holding mechanism 30. The second liquid supply unit 50 includes a nozzle 51, a nozzle 52, and a shaft 53.

噴嘴51，係經由閥55a連接於溶解處理液供給源45c。噴嘴52，係經由閥55b連接於剝離處理液供給源45b。軸部53，係位於旋轉保持部31的旋轉中心且被支柱部32而包圍。 The nozzle 51 is connected to a dissolution treatment liquid supply source 45c via a valve 55a. The nozzle 52 is connected to a peeling treatment liquid supply source 45b via a valve 55b. The shaft portion 53 is located at the center of rotation of the rotation holding portion 31 and is surrounded by the pillar portion 32.

又，在其內部，使用以從各閥55a，55b將處理流體供給至噴嘴51，52的供給管導通。噴嘴52，係朝垂直上方延伸，其吐出口的前端，係朝向晶圓W之背面的中心部。另一方面，噴嘴51，係朝設置有保持構件311之旋轉保持部31的外周方向延伸，其前端，係朝向晶圓W之背面的周緣部。 In addition, the supply pipes used to supply the treatment fluid to the nozzles 51 and 52 from the valves 55a and 55b are conducted inside. The nozzle 52 extends vertically upward, and the tip of the discharge port faces the center of the back surface of the wafer W. On the other hand, the nozzle 51 extends in the outer peripheral direction of the rotation holding portion 31 where the holding member 311 is provided, and its tip is directed toward the peripheral edge portion of the back surface of the wafer W.

回收罩杯60，係以包圍旋轉保持部31的方式而配置，捕捉因旋轉保持部31之旋轉而從晶圓W飛散的處理液。在回收罩杯60的底部，係形成有排液口61，藉由回收罩杯60所捕捉到的處理液，係從該排液口61而排出至基板洗淨裝置14的外部。又，在回收罩杯60的底部，係形成有將從FFU21所供給之下降流氣體排出至基板洗淨裝置14之外部的排氣口62。 The recovery cup 60 is arranged so as to surround the rotation holding portion 31 and catches the processing liquid scattered from the wafer W due to the rotation of the rotation holding portion 31. A drain port 61 is formed at the bottom of the recovery cup 60, and the processing liquid captured by the recovery cup 60 is discharged from the drain port 61 to the outside of the substrate cleaning device 14. In addition, at the bottom of the recovery cup 60, an exhaust port 62 for exhausting the downflow gas supplied from the FFU 21 to the outside of the substrate cleaning device 14 is formed.

<基板洗淨系統的具體動作> <Specific actions of substrate cleaning system>

其次，參閱圖4及圖5A~圖5D，說明關於基板洗淨裝置14的具體動作。在第1實施形態中，係將在表面形成有以Ge(鍺)作為材料之膜的基板設成為對象。圖4，係表示第1實施形態之基板洗淨裝置14所執行之基板洗淨處理之處理步驟的流程圖。圖5A~圖5D，係基板洗淨裝置14的動作說明圖。 Next, referring to FIGS. 4 and 5A to 5D, specific operations of the substrate cleaning device 14 will be described. In the first embodiment, a substrate on which a film made of Ge (germanium) as a material is formed is used as a target. FIG. 4 is a flowchart showing the processing procedure of the substrate cleaning process performed by the substrate cleaning device 14 of the first embodiment. 5A to 5D are diagrams illustrating the operation of the substrate cleaning device 14.

如圖4所示，在基板洗淨裝置14中，係首先進行基板搬入處理(步驟S101)。在該基板搬入處理中，被基板搬送裝置131(參閱圖2)搬入至腔室20內的晶圓W，係藉由基板保持機構30的保持構件311而保持。 As shown in FIG. 4, in the substrate cleaning apparatus 14, the substrate carrying-in process is first performed (step S101). In this substrate carrying process, the wafer W carried into the chamber 20 by the substrate carrying device 131 (see FIG. 2) is held by the holding member 311 of the substrate holding mechanism 30.

此時，晶圓W，係於圖案形成面朝向了上方的狀態下，被保持於保持構件311。其後，旋轉保持部31藉由驅動部而旋轉。藉此，晶圓W，係在被水平保持於旋轉保持部31的狀態下，與旋轉保持部31一起旋轉。 At this time, the wafer W is held by the holding member 311 with the pattern formation surface facing upward. After that, the rotation holding portion 31 is rotated by the driving portion. Thereby, the wafer W is rotated together with the rotation holding part 31 while being held horizontally by the rotation holding part 31.

接著，在基板洗淨裝置14中，係進行成膜處理液供給處理(步驟S102)。在該成膜處理液供給處理中，係如圖5A所示，對未形成有光阻之晶圓W的圖案形成面供給成膜處理液即面塗層液。如此一來，面塗層液，係不用經由光阻而被供給至晶圓W上。 Next, in the substrate cleaning apparatus 14, a film forming processing liquid supply process is performed (step S102). In this film-forming treatment liquid supply process, as shown in FIG. 5A, a top coat liquid, which is a film-forming treatment liquid, is supplied to the patterned surface of the wafer W on which the photoresist is not formed. In this way, the top coat liquid is supplied onto the wafer W without passing through the photoresist.

供給至晶圓W的面塗層液，係如圖5B所示，藉由伴隨著晶圓W之旋轉的離心力而擴散於晶圓W的表面。而且，藉由面塗層液一面引起伴隨著揮發成分之揮發的體積收縮，一面固化或硬化的方式，在晶圓W的圖案形 成面形成有面塗層液的液膜。 The topcoat liquid supplied to the wafer W is spread on the surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W as shown in FIG. 5B. In addition, the top coat liquid causes the volume shrinkage accompanying the volatilization of volatile components while curing or hardening at the same time. A liquid film of topcoat liquid is formed on the surface.

接著，在基板洗淨裝置14中，係進行乾燥處理(步驟S103)。在該乾燥處理中，係藉由使例如晶圓W之旋轉速度增加預定時間的方式，使面塗層液乾燥。藉此，促進面塗層液所含之揮發成分的揮發，面塗層液便固化或硬化，在晶圓W的圖案形成面形成面塗層膜。 Next, in the substrate cleaning device 14, a drying process is performed (step S103). In this drying process, the topcoat liquid is dried by increasing the rotation speed of the wafer W for a predetermined time, for example. Thereby, the volatilization of the volatile components contained in the top coating liquid is promoted, and the top coating liquid is cured or hardened, and a top coating film is formed on the pattern formation surface of the wafer W.

然而，供給至晶圓W之主面的面塗層液，係如圖5B所示，從晶圓W之周緣部些許包覆至晶圓W的背面。因此，當執行乾燥處理時，則成為亦在晶圓W之斜角部或背面側之周緣部形成有面塗層膜的狀態。即便在執行乾燥處理之前且供給面塗層液之間，亦由於面塗層液之固化及硬化不斷進展，因此，有可能形成面塗層膜。 However, the topcoat liquid supplied to the main surface of the wafer W is slightly covered from the periphery of the wafer W to the back surface of the wafer W as shown in FIG. 5B. Therefore, when the drying process is performed, the top coat film is also formed on the bevel portion or the peripheral edge portion of the back side of the wafer W. Even before the drying process is performed and between the supply of the top coating liquid, since the curing and hardening of the top coating liquid progresses, it is possible to form a top coating film.

因此，在開始從噴嘴41對晶圓W的主面供給面塗層液後且供給結束之前，如圖5C所示，從第2液供給部50之噴嘴51對晶圓W之背面側的周緣部供給溶解處理液(在此，係IPA)。 Therefore, after the supply of the topcoat liquid from the nozzle 41 to the main surface of the wafer W is started and before the supply is completed, as shown in FIG. 5C, the nozzle 51 of the second liquid supply unit 50 faces the peripheral edge on the back side of the wafer W. The part supplies the dissolution treatment liquid (here, IPA).

該IPA，係在被供給至晶圓W之背面側的周緣部後，從晶圓W之斜角部包覆至主面側的周緣部。藉此，如圖5D所示，附著於晶圓W之背面側的周緣部、斜角部及主面側之周緣部的面塗層膜或面塗層液便被溶解而去除。其後，晶圓W的旋轉便停止。 The IPA is supplied to the peripheral edge portion on the back side of the wafer W, and then covers the beveled corner portion of the wafer W to the peripheral edge portion on the main surface side. Thereby, as shown in FIG. 5D, the topcoat film or topcoat liquid adhering to the peripheral edge portion, the beveled portion, and the peripheral edge portion of the main surface side of the wafer W is dissolved and removed. After that, the rotation of the wafer W is stopped.

在第1實施形態中，噴嘴51呈傾斜，其前端朝向形成有面塗層膜的周緣部，對周緣部直接供給溶解處理液。因此，與將溶解處理液供給至基板之背面中心位置而 利用離心力將溶解處理液供給至周緣部的情況相比，可以少量來使面塗層膜溶解。 In the first embodiment, the nozzle 51 is inclined, and its tip faces the peripheral edge portion where the topcoat film is formed, and the dissolution treatment liquid is directly supplied to the peripheral edge portion. Therefore, compared with supplying the dissolving treatment liquid to the center of the back surface of the substrate Compared with the case where the dissolution treatment liquid is supplied to the peripheral portion by centrifugal force, the top coat film can be dissolved in a small amount.

藉由乾燥處理，在面塗層液固化或硬化而形成了面塗層膜後，基板洗淨裝置14，係進行剝離處理液供給處理(步驟S104)。在該剝離處理液供給處理中，係從噴嘴41與噴嘴51對形成於晶圓W上的面塗層膜，供給剝離處理液即HFE。供給至面塗層膜的HFE，係藉由伴隨著晶圓W之旋轉的離心力而擴散於面塗層膜上。 After the top coating liquid is cured or hardened by the drying treatment to form a top coating film, the substrate cleaning device 14 performs a stripping treatment liquid supply process (step S104). In this peeling treatment liquid supply process, the top coat film formed on the wafer W is supplied from the nozzle 41 and the nozzle 51 to the HFE that is the peeling treatment liquid. The HFE supplied to the top coating film is diffused on the top coating film by the centrifugal force accompanying the rotation of the wafer W.

HFE，係浸透於面塗層膜中而到達至晶圓W的界面，且浸透於晶圓W的界面(圖案形成面)，使面塗層膜從晶圓W剝離。藉此，附著於晶圓W之圖案形成面的微粒P便與面塗層膜一起從晶圓W被剝離。 HFE penetrates into the topcoat film to reach the interface of the wafer W, and penetrates into the interface (pattern formation surface) of the wafer W to peel the topcoat film from the wafer W. Thereby, the particles P attached to the pattern formation surface of the wafer W are peeled from the wafer W together with the top coat film.

接著，在基板洗淨裝置14中，係進行溶解處理液供給處理(步驟S105)。在該溶解處理液供給處理中，係從噴嘴41與噴嘴51對從晶圓W所剝離的面塗層膜，供給溶解處理液即IPA。藉此，面塗層膜便溶解。 Next, in the substrate cleaning device 14, the dissolution treatment liquid supply process is performed (step S105). In this dissolution treatment liquid supply process, the top coat film peeled from the wafer W is supplied from the nozzle 41 and the nozzle 51 to IPA, which is a dissolution treatment liquid. Thereby, the top coat film dissolves.

接著，在基板洗淨裝置14中，係進行沖洗處理(步驟S106)。在該沖洗處理中，係從噴嘴41與噴嘴51對旋轉之晶圓W供給相對性較步驟S105更大流量的IPA，藉此，浮游於溶解之面塗層膜或IPA中的微粒P則與IPA一起從晶圓W被去除。 Next, in the substrate cleaning apparatus 14, a rinse process is performed (step S106). In this rinsing process, the rotating wafer W is supplied from the nozzle 41 and the nozzle 51 with a relatively larger flow rate of IPA than in step S105, whereby the particles P floating in the dissolved top coat film or IPA are compared with The IPA is removed from the wafer W together.

接著，在基板洗淨裝置14中，係進行乾燥處理(步驟S107)。在該乾燥處理中，係藉由使例如晶圓W之旋轉速度增加預定時間的方式，甩去殘存於晶圓W之表 面的IPA，使晶圓W乾燥。其後，晶圓W的旋轉便停止。 Next, in the substrate cleaning device 14, a drying process is performed (step S107). In this drying process, for example, by increasing the rotation speed of the wafer W for a predetermined time, the surface remaining on the wafer W is thrown off. The surface of the IPA makes the wafer W dry. After that, the rotation of the wafer W is stopped.

接著，在基板洗淨裝置14中，係進行基板搬出處理(步驟S108)。在該基板搬出處理中，係藉由基板搬送裝置131(參閱圖2)，從基板洗淨裝置14之腔室20取出晶圓W。 Next, in the substrate cleaning device 14, the substrate carrying-out process is performed (step S108). In this substrate unloading process, the wafer W is taken out from the chamber 20 of the substrate cleaning device 14 by the substrate transfer device 131 (see FIG. 2).

其後，晶圓W，係經由收授部122及基板搬送裝置121，被收容於載置在載體載置部11的載體C。當該基板搬出處理結束時，則針對1片晶圓W的基板洗淨處理便結束。 After that, the wafer W is housed in the carrier C placed on the carrier placing section 11 via the receiving section 122 and the substrate transfer device 121. When the substrate unloading process is completed, the substrate cleaning process for one wafer W is completed.

如上述，第1實施形態之基板洗淨系統1，係具備有成膜處理液供給部(第1液供給部40)、剝離處理液供給部(第1液供給部40，第2液供給部50)及溶解處理液供給部(第1液供給部40，第2液供給部50)。 As described above, the substrate cleaning system 1 of the first embodiment is provided with a film-forming processing liquid supply unit (first liquid supply unit 40), and a stripping processing liquid supply unit (first liquid supply unit 40, second liquid supply unit). 50) and the dissolution treatment liquid supply unit (first liquid supply unit 40, second liquid supply unit 50).

成膜處理液供給部，係對表面為親水性之晶圓W，供給包含有揮發成分而用以在晶圓W上形成膜的成膜處理液(面塗層液)。剝離處理液供給部，係對藉由揮發成分產生揮發而在晶圓W上固化或硬化的成膜處理液(面塗層膜)，供給使該成膜處理液(面塗層膜)從晶圓W剝離的剝離處理液(HFE)。 The film-forming processing liquid supply unit supplies a film-forming processing liquid (topcoat liquid) containing volatile components for forming a film on the wafer W to the wafer W whose surface is hydrophilic. The stripping treatment liquid supply unit supplies the film-forming treatment liquid (face coating film) that solidifies or hardens on the wafer W by the volatilization of volatile components, and supplies the film-forming treatment liquid (face coating film) from the crystal A peeling treatment liquid (HFE) that peels off the circle W.

而且，溶解處理液供給部，係對固化或硬化的成膜處理液(面塗層膜)，供給使該成膜處理液(面塗層膜)溶解的溶解處理液(IPA)。 In addition, the dissolution treatment liquid supply unit supplies a dissolution treatment liquid (IPA) for dissolving the film formation treatment liquid (face coating film) to the cured or hardened film formation treatment liquid (face coating film).

因此，根據第1實施形態之基板洗淨系統1，不會對基板之表面帶來影響，而可去除附著於晶圓W之粒 徑小的微粒P。 Therefore, according to the substrate cleaning system 1 of the first embodiment, the particles attached to the wafer W can be removed without affecting the surface of the substrate. Small particle P.

又，在第1實施形態中，係使用非極性溶媒的1個即HFE作為剝離處理液，又，使用極性溶媒的1個即IPA作為溶解處理液。藉此，不會對晶圓W之表面帶來溶解或腐蝕這樣的影響而可進行洗淨處理。 In the first embodiment, HFE, which is one of the non-polar solvents, is used as the peeling treatment liquid, and IPA, which is one of the polar solvents, is used as the dissolution treatment liquid. Thereby, the cleaning process can be performed without the influence of dissolution or corrosion on the surface of the wafer W.

不限定於上述的例子，亦可使用非極性溶媒即HFC、HFO、PFC之任一作為剝離處理液，且使用極性溶媒即醇類(IPA以外)、PGMEA、PGME、MIBC之任一作為溶解處理液。另外，亦可使少量之極性有機溶媒混合於剝離處理液。少量之極性有機溶媒會對膜進行微量溶解，藉此，非極性溶媒則變得易浸透於膜中及基板的界面，而膜的剝離性便提升。 It is not limited to the above-mentioned examples. It is also possible to use any one of non-polar solvents, namely HFC, HFO, PFC, as the stripping treatment liquid, and use any one of polar solvents, namely alcohols (other than IPA), PGMEA, PGME, and MIBC as the dissolution treatment liquid. In addition, a small amount of polar organic solvent may be mixed with the peeling treatment liquid. A small amount of polar organic solvent will dissolve the film in a small amount, so that the non-polar solvent becomes easy to penetrate the film and the interface of the substrate, and the peelability of the film is improved.

又，即便使用了Ge或MRAM等之磁性隨機存取記憶體的金屬材料作為晶圓W，亦同樣地可適用。又，不限於在表面形成有以Ge(鍺)作為材料之膜的基板，對形成有使用了III-V族的材料或MRAM用的金屬材料之膜的基板，亦可進行同樣的洗淨。 In addition, even if a metal material of a magnetic random access memory such as Ge or MRAM is used as the wafer W, the same is applicable. In addition, it is not limited to a substrate on which a film made of Ge (germanium) is formed on the surface, and a substrate on which a film made of a III-V group material or a metal material for MRAM is formed can also be cleaned in the same way.

又，成膜處理液，係不限於面塗層液，只要為藉由乾燥處理而硬化收縮，且含有以剝離處理液及溶解處理液的關係來適當地進行剝離及溶解之極性有機物即合成樹脂的液體即可，例如亦可使用包含有酚醛樹脂的光阻液等、其他的處理液。 In addition, the film-forming treatment liquid is not limited to the topcoat liquid, as long as it hardens and shrinks by drying treatment, and contains a synthetic resin that is a polar organic substance that is appropriately peeled and dissolved in the relationship between the peeling treatment liquid and the dissolving treatment liquid. Any liquid is sufficient, and for example, a photoresist liquid containing a phenol resin, etc., and other treatment liquids can also be used.

又，洗淨處理之預處理並沒有限定，例如亦可在對附著有經乾蝕刻後之聚合物或微粒的晶圓W進行使 用了有機洗淨液的濕式清洗，其後，開始圖4所示的處理。 In addition, the pretreatment of the cleaning process is not limited. For example, it can be applied to the wafer W on which the polymer or particles after the dry etching are adhered. After wet cleaning with an organic cleaning solution, the process shown in FIG. 4 is started.

(第2實施形態) (Second Embodiment) <基板洗淨方法的內容> <Contents of substrate cleaning method>

第2實施形態之基板處理方法，係可不受到Q-time的限制，對露出了形成於內部之金屬配線的至少一部分之晶圓W進行處理。 The substrate processing method of the second embodiment is not limited by Q-time, and can process the wafer W in which at least a part of the metal wiring formed inside is exposed.

在此，Q-time，係指為了防止例如由乾蝕刻所露出的金屬配線氧化等，而對乾蝕刻後之放置時間予以設定的限制時間。 Here, Q-time refers to a limit time set for the standing time after dry etching in order to prevent oxidation of metal wiring exposed by dry etching, for example.

當設定Q-time時，由於必需實施用於遵守Q-time之時間管理，故有伴隨著工時增加而造成生產率下降之虞。又，在所設定之Q-time較短的情況下，管線管理會變得困難。故，亦讓人擔心因管線管理之複雜化而造成生產率下降。 When Q-time is set, it is necessary to implement time management for compliance with Q-time, so there is a risk that productivity will decrease along with the increase in working hours. Moreover, when the set Q-time is relatively short, pipeline management becomes difficult. Therefore, people are also worried about the decline in productivity due to the complexity of pipeline management.

圖6，係表示第2實施形態之晶圓W之構成的示意圖。如圖6所示，在第2實施形態中，晶圓W，係在底面具有配線層，在配線層形成有金屬配線的一例即Cu配線。在此，P為不要物，除了第1實施形態中之微粒以外，亦包含有藉由乾蝕刻或灰化而產生之聚合物等的反應生成物。 FIG. 6 is a schematic diagram showing the structure of a wafer W in the second embodiment. As shown in FIG. 6, in the second embodiment, the wafer W has a wiring layer on the bottom surface, and Cu wiring is an example of metal wiring formed on the wiring layer. Here, P is an unnecessary substance. In addition to the particles in the first embodiment, it also includes reaction products such as polymers produced by dry etching or ashing.

圖7A~圖7E，係第2實施形態之基板洗淨方法的說明圖。在第2實施形態之基板洗淨方法中，係如圖7A所示，將與第1實施形態同樣的成膜處理液供給至晶圓W 上。 7A to 7E are explanatory diagrams of the substrate cleaning method of the second embodiment. In the substrate cleaning method of the second embodiment, as shown in FIG. 7A, the same film-forming treatment solution as in the first embodiment is supplied to the wafer W on.

當面塗層膜被形成於晶圓W上時，則藉由乾蝕刻而露出的Cu配線會成為被面塗層膜覆蓋的狀態。晶圓W，係在該狀態下被收容於搬送容器。 When the top coat film is formed on the wafer W, the Cu wiring exposed by dry etching will be in a state covered by the top coat film. The wafer W is stored in the transport container in this state.

如此一來，根據第2實施形態之基板洗淨方法，藉由以面塗層膜來保護所露出之Cu配線的方式，由於所露出之Cu配線不會受到氧化等的不良影響，因此，不需要設定Q-time。由於不需要Q-time，因此，不需要用以遵守Q-time的時間管理，又，亦可防止伴隨著遵守Q-time之管線管理的複雜化。因此，根據第2實施形態之基板洗淨方法，可使生產率提升。 In this way, according to the substrate cleaning method of the second embodiment, by protecting the exposed Cu wiring with a top coat film, the exposed Cu wiring will not be adversely affected by oxidation or the like. Need to set Q-time. Since Q-time is not required, there is no need for time management to comply with Q-time, and the complication of pipeline management accompanying Q-time compliance can also be prevented. Therefore, according to the substrate cleaning method of the second embodiment, productivity can be improved.

又，作為反應生成物之不要物P，係因乾蝕刻之殘留氣體與大氣中的水分或氧氣反應而生長。對此，根據第2實施形態之基板洗淨方法，藉由以面塗層膜來保護所露出之Cu配線的方式，可抑制作為反應生成物之不要物P的生長。因此，亦可防止作為反應生成物的不要物P所致之電氣特性的降低或良率下降等之不良影響。 In addition, the unwanted substance P, which is a reaction product, grows due to the reaction between the residual gas of dry etching and the moisture or oxygen in the atmosphere. In contrast, according to the substrate cleaning method of the second embodiment, by protecting the exposed Cu wiring with a top coat film, it is possible to suppress the growth of the unwanted substance P as a reaction product. Therefore, it is also possible to prevent adverse effects such as a decrease in electrical characteristics or a decrease in yield due to the unwanted substance P as a reaction product.

另外，在第2實施形態之基板洗淨方法中，係亦進行如下述之處理：在取出收容於搬送容器的晶圓W後，去除形成於晶圓W上的面塗層膜，藉此，去除不要物P。 In addition, in the substrate cleaning method of the second embodiment, the following process is also performed: after taking out the wafer W contained in the transport container, the top coat film formed on the wafer W is removed, thereby, Remove unnecessary P.

在圖7A~圖7E之第2實施形態之基板洗淨方法中，第1實施形態之說明圖即圖1A~圖1E的差異，係僅有無Cu配線，所使用的成膜處理液、剝離處理液及溶解處理 液，係與第1實施形態同樣者。因此，與第1實施形態同樣地，不會對基板之表面帶來影響，而可去除附著於晶圓W之粒徑小的不要物(微粒或反應生成物)P。除此以外，第2實施形態之基板洗淨方法，係為了不需要Q-time，而應用於以下的基板洗淨系統。 In the substrate cleaning method of the second embodiment of FIGS. 7A to 7E, the explanatory diagram of the first embodiment is the difference between FIGS. 1A to 1E. The only difference is that there is no Cu wiring, and the film forming treatment liquid and peeling treatment are used. Liquid and dissolution treatment The liquid is the same as in the first embodiment. Therefore, as in the first embodiment, it is possible to remove unnecessary objects (particles or reaction products) P with a small particle size adhering to the wafer W without affecting the surface of the substrate. In addition, the substrate cleaning method of the second embodiment is applied to the following substrate cleaning system because Q-time is not required.

<基板洗淨系統之構成> <Composition of Substrate Cleaning System>

其次，參閱圖8，說明關於執行上述之基板洗淨方法之基板洗淨系統的構成。圖8，係表示第2實施形態之基板洗淨系統之概略構成的圖。 Next, referring to FIG. 8, the structure of the substrate cleaning system for performing the above-mentioned substrate cleaning method will be described. Fig. 8 is a diagram showing a schematic configuration of a substrate cleaning system of the second embodiment.

如圖8所示，第2實施形態之基板洗淨系統1001，係具備有作為預處理裝置的第1處理裝置1002與作為後處理裝置的第2處理裝置1。又，基板洗淨系統1001，係具備有控制裝置4A與控制裝置4。 As shown in FIG. 8, the substrate cleaning system 1001 of the second embodiment includes a first processing device 1002 as a preprocessing device and a second processing device 1 as a post processing device. In addition, the substrate cleaning system 1001 includes a control device 4A and a control device 4.

第1處理裝置1002，係對晶圓W進行乾蝕刻或面塗層液的供給。又，第2處理裝置1，係對在第1處理裝置1002所處理的晶圓W，進行剝離處理液與溶解處理液之供給。第2處理裝置1，係具有與第1實施形態中之基板洗淨系統1相同的構成，在第2實施形態中，係系統的控制方法不同於第1實施形態。因此，在第2實施形態中，係省略構成的說明，關於控制方法的詳細內容，係如後述。 The first processing device 1002 performs dry etching on the wafer W or supply of a topcoat liquid. In addition, the second processing device 1 supplies the peeling processing liquid and the dissolving processing liquid to the wafer W processed by the first processing device 1002. The second processing device 1 has the same configuration as the substrate cleaning system 1 in the first embodiment. In the second embodiment, the control method of the system is different from that of the first embodiment. Therefore, in the second embodiment, the description of the configuration is omitted, and the details of the control method will be described later.

控制裝置4A，係例如為電腦，具備有控制部15A與記憶部16A。記憶部16A，係由例如RAM(Random Access Memory)、ROM(Read Only Memory)、硬碟這 樣的記憶裝置所構成，記憶有控制在第1處理裝置1002中所執行之各種處理的程式。控制部15A，係例如為CPU(Central Processing Unit)，藉由讀出並執行記憶於記憶部16A之程式的方式，控制第1處理裝置1002的動作。 The control device 4A is, for example, a computer, and includes a control unit 15A and a storage unit 16A. The memory 16A is composed of, for example, RAM (Random Access Memory), ROM (Read Only Memory), and hard disk. Such a memory device is constituted by storing programs for controlling various processes executed in the first processing device 1002. The control unit 15A is, for example, a CPU (Central Processing Unit), and controls the operation of the first processing device 1002 by reading and executing a program stored in the memory unit 16A.

另外，該些程式，係記錄於藉由電腦而可讀取的記憶媒體者，亦可為從其記憶媒體安裝於控制裝置4A的記憶部16A或控制裝置4的記憶部16者。作為能藉由電腦讀取的記憶媒體，係有例如硬碟(HD)、軟碟片(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。 In addition, these programs may be recorded in a storage medium readable by a computer, or may be installed in the storage unit 16A of the control device 4A or the storage unit 16 of the control device 4 from the storage medium. As a storage medium that can be read by a computer, there are, for example, hard disk (HD), floppy disk (FD), compact disk (CD), magneto-optical disk (MO), memory card, etc.

<第1處理裝置之構成> <Configuration of the first processing device>

其次，參閱圖9，說明關於第1處理裝置1002的構成。圖9，係表示第2實施形態之第1處理裝置1002之概略構成的圖。另外，在以下中，為了明確位置關係而規定相互正交之X軸、Y軸及Z軸，並將Z軸正方向設成為垂直向上方向。 Next, referring to FIG. 9, the configuration of the first processing device 1002 will be described. Fig. 9 is a diagram showing a schematic configuration of the first processing device 1002 of the second embodiment. In addition, in the following, in order to clarify the positional relationship, the X-axis, the Y-axis, and the Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is assumed to be a vertical upward direction.

如圖9所示，第1處理裝置1002，係具備有搬入搬出站1005與處理站1006。搬入搬出站1005與處理站1006，係鄰接設置。 As shown in FIG. 9, the first processing apparatus 1002 is provided with a carry-in/out station 1005 and a processing station 1006. The loading and unloading station 1005 and the processing station 1006 are installed adjacently.

搬入搬出站1005，係具備有載置部1010與搬送部1011。在載置部1010，係載置有以水平狀態收容複數片晶圓W的複數個搬送容器(以下，記載為載體C)。 The carry-in and carry-out station 1005 is provided with a placing section 1010 and a conveying section 1011. In the mounting portion 1010, a plurality of transport containers (hereinafter, referred to as carrier C) that accommodate a plurality of wafers W in a horizontal state are mounted.

搬送部1011，係鄰接設置於載置部1010，且 在內部具備有基板搬送裝置1111。基板搬送裝置1111，係具備有保持晶圓W的晶圓保持機構。又，基板搬送裝置1111，係可朝向水平方向及垂直方向移動及以垂直軸為中心旋轉，並使用晶圓保持機構，在載體C與處理站1006之間進行晶圓W之搬送。 The conveying part 1011 is arranged adjacent to the placing part 1010, and A substrate transport device 1111 is provided inside. The substrate transfer device 1111 is provided with a wafer holding mechanism that holds the wafer W. In addition, the substrate transfer device 1111 is capable of moving in the horizontal and vertical directions and rotating around the vertical axis, and uses a wafer holding mechanism to transfer the wafer W between the carrier C and the processing station 1006.

具體而言，基板搬送裝置1111，係進行從載置於載置部1010之載體C取出晶圓W，並將取出之晶圓W搬入至後述之處理站1006之乾蝕刻單元1012的處理。又，基板搬送裝置1111，係亦進行從後述之處理站1006的第1液處理單元1014取出晶圓W，並將取出之晶圓W收容於載置部1010之載體C的處理。 Specifically, the substrate conveying device 1111 performs a process of taking out the wafer W from the carrier C placed on the placing portion 1010 and carrying the taken out wafer W to the dry etching unit 1012 of the processing station 1006 described later. In addition, the substrate transfer device 1111 also performs processing of taking out the wafer W from the first liquid processing unit 1014 of the processing station 1006 described later, and storing the taken-out wafer W in the carrier C of the mounting portion 1010.

處理站1006，係鄰接設置於搬送部1011。處理站1006，係具備有乾蝕刻單元1012、裝載鎖定室1013及第1液處理單元1014。 The processing station 1006 is provided adjacent to the conveying unit 1011. The processing station 1006 includes a dry etching unit 1012, a load lock chamber 1013, and a first liquid processing unit 1014.

乾蝕刻單元1012，係相當於預處理部之一例，對藉由基板搬送裝置1111所搬入的晶圓W進行乾蝕刻處理。藉此，晶圓W內部的Cu配線便露出。 The dry etching unit 1012 corresponds to an example of a pre-processing unit, and performs dry etching processing on the wafer W carried by the substrate transport device 1111. Thereby, the Cu wiring inside the wafer W is exposed.

另外，乾蝕刻處理，係在減壓狀態下進行。又，在乾蝕刻單元1012中，係有在乾蝕刻處理後，進行去除不需要之光阻之灰化處理的情形。 In addition, the dry etching process is performed under reduced pressure. In addition, in the dry etching unit 1012, there is a case where an ashing process is performed to remove unnecessary photoresist after the dry etching process.

裝載鎖定室1013，係被構成為可在大氣壓狀態與減壓狀態切換內部之壓力。在裝載鎖定室1013的內部，係設置有未圖示的基板搬送裝置。結束了乾蝕刻單元1012之處理的晶圓W，係藉由裝載鎖定室1013之未圖示的 基板搬送裝置，從乾蝕刻單元1012被搬出而搬入至第1液處理單元1014。 The load lock chamber 1013 is configured to switch the internal pressure between the atmospheric pressure state and the reduced pressure state. Inside the load lock chamber 1013, a substrate transport device (not shown) is installed. The wafer W, which has been processed by the dry etching unit 1012, is loaded by the unshown in the load lock chamber 1013 The substrate transfer device is carried out from the dry etching unit 1012 and carried in to the first liquid processing unit 1014.

具體而言，裝載鎖定室1013的內部，係被保持為減壓狀態直至從乾蝕刻單元1012搬出晶圓W，在搬出結束後，予以供給氮或氬等的惰性氣體而切換至大氣壓狀態。而且，在切換至大氣壓狀態後，裝載鎖定室1013之未圖示的基板搬送裝置便將晶圓W搬入至第1液處理單元1014。 Specifically, the inside of the load lock chamber 1013 is maintained in a reduced pressure state until the wafer W is unloaded from the dry etching unit 1012, and after unloading, an inert gas such as nitrogen or argon is supplied and switched to the atmospheric pressure state. Then, after switching to the atmospheric pressure state, a substrate transfer device not shown in the load lock chamber 1013 transfers the wafer W to the first liquid processing unit 1014.

如此一來，從乾蝕刻單元1012被搬出起至被搬入至第1液處理單元1014的期間，由於晶圓W與外氣隔絕，因此，防止所露出之Cu配線的氧化。 In this way, during the period from when the dry etching unit 1012 is carried out to when it is carried into the first liquid processing unit 1014, since the wafer W is isolated from the outside air, oxidation of the exposed Cu wiring is prevented.

接著，第1液處理單元1014，係進行將面塗層液供給至晶圓W的成膜處理液供給處理。如上述，供給至晶圓W的面塗層液，係一面引起體積收縮一面固化或硬化，而成為面塗層膜。藉此，所露出的Cu配線便成為被面塗層膜覆蓋的狀態。 Next, the first liquid processing unit 1014 performs film formation processing liquid supply processing for supplying the top coat liquid to the wafer W. As described above, the top coating liquid supplied to the wafer W is cured or hardened while causing volume shrinkage to become a top coating film. Thereby, the exposed Cu wiring is in a state covered with the top coat film.

成膜處理液供給處理後的晶圓W，係藉由基板搬送裝置1111而收容於載體C，其後，被搬送至第2處理裝置1。 The wafer W processed by the film-forming processing liquid is supplied and stored in the carrier C by the substrate transport device 1111, and then transported to the second processing device 1.

<乾蝕刻單元之構成> <The composition of dry etching unit>

其次，說明關於上述之第1處理裝置1002所具備之各單元的構成。首先，參閱圖10，說明關於乾蝕刻單元1012的構成。圖10，係表示第2實施形態之乾蝕刻單元1012之 構成之一例的示意圖。 Next, the configuration of each unit included in the above-mentioned first processing device 1002 will be described. First, referring to FIG. 10, the structure of the dry etching unit 1012 will be described. Fig. 10 shows the dry etching unit 1012 of the second embodiment A schematic diagram of an example of the configuration.

如圖10所示，乾蝕刻單元1012，係具備有收容晶圓W之密閉構造的腔室1201，在腔室1201內，係設置有以水平狀態載置晶圓W的載置台1202。載置台1202，係具備有調溫機構1203，該調溫機構1203，係使晶圓W進行冷卻或加熱而調節成預定溫度。在腔室1201的側壁，係設置有用以在與裝載鎖定室1013之間搬入搬出晶圓W的搬入搬出口(未圖示)。 As shown in FIG. 10, the dry etching unit 1012 is provided with a chamber 1201 having a closed structure for accommodating the wafer W. In the chamber 1201, a mounting table 1202 on which the wafer W is placed in a horizontal state is provided. The mounting table 1202 is provided with a temperature adjustment mechanism 1203 that cools or heats the wafer W to adjust to a predetermined temperature. The side wall of the chamber 1201 is provided with a carry-in/outlet (not shown) for carrying in and out of the wafer W between the chamber 1201 and the load lock chamber 1013.

在腔室1201的頂部，係設置有噴頭1204。在噴頭1204，係連接有氣體供給管1205。在該氣體供給管1205，係經由閥1206連接有蝕刻氣體供給源1207，從蝕刻氣體供給源1207對噴頭1204供給預定的蝕刻氣體。噴頭1204，係將從蝕刻氣體供給源1207所供給的蝕刻氣體供給至腔室1201內。 At the top of the chamber 1201, a spray head 1204 is provided. A gas supply pipe 1205 is connected to the shower head 1204. The gas supply pipe 1205 is connected to an etching gas supply source 1207 via a valve 1206, and a predetermined etching gas is supplied from the etching gas supply source 1207 to the shower head 1204. The shower head 1204 supplies the etching gas supplied from the etching gas supply source 1207 into the chamber 1201.

另外，從蝕刻氣體供給源1207所供給的蝕刻氣體，係例如CH3F氣體、CH2F2氣體、CF4氣體、O2氣體、Ar氣體源等。 In addition, the etching gas supplied from the etching gas supply source 1207 is, for example, CH 3 F gas, CH 2 F 2 gas, CF 4 gas, O 2 gas, Ar gas source, or the like.

在腔室1201之底部，係經由排氣管線1208連接有排氣裝置1209。腔室1201之內部的壓力，係藉由該排氣裝置1209而維持為減壓狀態。 At the bottom of the chamber 1201, an exhaust device 1209 is connected via an exhaust line 1208. The pressure inside the chamber 1201 is maintained at a reduced pressure by the exhaust device 1209.

乾蝕刻單元1012，係如上述般而構成，在使用排氣裝置1209來對腔室1201之內部進行減壓的狀態下，從噴頭1204將蝕刻氣體供給至腔室1201內，藉此，對載置於載置台1202的晶圓W進行乾蝕刻。藉此，成為露出了Cu 配線的狀態。 The dry etching unit 1012 is configured as described above. In a state where the inside of the chamber 1201 is decompressed using the exhaust device 1209, the etching gas is supplied from the shower head 1204 into the chamber 1201, thereby preventing the carrier The wafer W placed on the mounting table 1202 is dry-etched. As a result, Cu is exposed The state of the wiring.

<第1液處理單元元之構成> <Configuration of the first liquid treatment unit>

其次，參閱圖11，說明關於第1處理裝置1002所具備之第1液處理單元1014的構成。圖11，係表示第2實施形態之第1液處理單元1014之構成之一例的示意圖。 Next, referring to FIG. 11, the configuration of the first liquid processing unit 1014 included in the first processing device 1002 will be described. FIG. 11 is a schematic diagram showing an example of the configuration of the first liquid treatment unit 1014 in the second embodiment.

如圖11所示，第1液處理單元1014，係具備有腔室1020、基板保持機構1030、液供給部40_1及回收罩杯1050。 As shown in FIG. 11, the first liquid processing unit 1014 is provided with a chamber 1020, a substrate holding mechanism 1030, a liquid supply part 40_1, and a recovery cup 1050.

腔室1020，係收容有基板保持機構1030、液供給部40_1及回收罩杯1050。在腔室1020的頂部，係設置有FFU(Fan Filter Unit)1021。FFU1021，係在腔室1020內形成下降流。 The chamber 1020 houses the substrate holding mechanism 1030, the liquid supply part 40_1, and the recovery cup 1050. On the top of the chamber 1020, an FFU (Fan Filter Unit) 1021 is provided. FFU1021 is a downflow in the chamber 1020.

在FFU1021，係經由閥1022連接有惰性氣體供給源1023。FFU1021，係將從惰性氣體供給源1023所供給之N2氣體等的惰性氣體吐出至腔室1020內。如此一來，藉由使用惰性氣體作為下降流氣體的方式，可防止所露出之Cu配線氧化的情形。 The FFU 1021 is connected to an inert gas supply source 1023 via a valve 1022. The FFU 1021 discharges inert gas such as N 2 gas supplied from the inert gas supply source 1023 into the chamber 1020. In this way, by using an inert gas as the downflow gas, the exposed Cu wiring can be prevented from oxidizing.

基板保持機構1030，係具備有：旋轉保持部1031，可旋轉地保持晶圓W；及流體供給部1032，被插通於旋轉保持部1031之中空部1314，而將氣體供給至晶圓W的下面。 The substrate holding mechanism 1030 is provided with: a rotation holding portion 1031 that rotatably holds the wafer W; and a fluid supply portion 1032 that is inserted into the hollow portion 1314 of the rotation holding portion 1031 to supply gas to the wafer W the following.

旋轉保持部1031，係設置於腔室1020的大致中央。在該旋轉保持部1031的上面，係設置有從側面保持 晶圓W的保持構件1311。晶圓W，係在些許離開旋轉保持部1031之上面的狀態下，藉由該保持構件1311而水平保持。 The rotation holding portion 1031 is provided in the approximate center of the cavity 1020. On the upper surface of the rotation holding part 1031, a side holding The holding member 1311 of the wafer W. The wafer W is held horizontally by the holding member 1311 in a state slightly separated from the upper surface of the rotation holding portion 1031.

又，基板保持機構1030，係具備有由馬達或使馬達之旋轉傳達至旋轉保持部1031之傳送帶等所構成的驅動機構1312。旋轉保持部1031，係藉由該驅動機構1312而繞著垂直軸周圍旋轉。而且，藉由旋轉保持部1031旋轉的方式，保持於旋轉保持部1031的晶圓W便與旋轉保持部1031一體旋轉。另外，旋轉保持部1031，係經由軸承1313，可旋轉地支撐於腔室1020及回收罩杯1050。 In addition, the substrate holding mechanism 1030 is provided with a driving mechanism 1312 composed of a motor or a conveyor belt that transmits the rotation of the motor to the rotation holding portion 1031. The rotation holding portion 1031 is rotated around the vertical axis by the driving mechanism 1312. In addition, the wafer W held by the rotation holding portion 1031 rotates integrally with the rotation holding portion 1031 by the rotation of the rotation holding portion 1031. In addition, the rotation holding portion 1031 is rotatably supported by the cavity 1020 and the recovery cup 1050 via a bearing 1313.

流體供給部1032，係插通於被形成在旋轉保持部1031之中央的中空部1314。在流體供給部1032的內部，係形成有流路1321，在該流路1321，係經由閥1033連接有N2供給源1034。流體供給部1032，係經由閥1033及流路1321，將從N2供給源1034所供給的N2氣體供給至晶圓W的下面。 The fluid supply part 1032 is inserted through a hollow part 1314 formed in the center of the rotation holding part 1031. Inside the fluid supply part 1032, a flow path 1321 is formed, and an N 2 supply source 1034 is connected to the flow path 1321 via a valve 1033. The fluid supply unit 1032 supplies the N 2 gas supplied from the N 2 supply source 1034 to the lower surface of the wafer W via the valve 1033 and the flow path 1321.

經由閥1033而供給的N2氣體，係高溫(例如，90℃左右)的N2氣體，被使用於後述之揮發促進處理。 The N 2 gas supplied through the valve 1033 is a high temperature (for example, about 90° C.) N 2 gas, and is used for the volatilization promotion process described later.

基板保持機構1030，係在從裝載鎖定室1013之未圖示的基板搬送裝置接收晶圓W的情況下，於使用未圖示之升降機構來使流體供給部1032上升的狀態下，使晶圓W載置於被設置在流體供給部1032的上面之未圖示的支撐銷上。其後，基板保持機構1030，係在使流體供給部 1032下降至預定位置後，將晶圓W傳遞至旋轉保持部1031的保持構件1311。又，基板保持機構1030，係在將處理完畢之晶圓W傳遞至基板搬送裝置1111的情況下，使用未圖示之升降機構來使流體供給部1032上升，使藉由保持構件1311所保持之晶圓W載置於未圖示的支撐銷上。而且，基板保持機構1030，係將載置於未圖示之支撐銷上的晶圓W傳遞至基板搬送裝置1111。 The substrate holding mechanism 1030 is used to raise the fluid supply unit 1032 in the state where the wafer W is received from the substrate transport device not shown in the load lock chamber 1013, and the wafer W is placed on a support pin (not shown) provided on the upper surface of the fluid supply part 1032. Thereafter, the substrate holding mechanism 1030 is attached to the fluid supply part After 1032 descends to a predetermined position, the wafer W is transferred to the holding member 1311 of the rotation holding portion 1031. In addition, the substrate holding mechanism 1030 uses an elevating mechanism (not shown) to raise the fluid supply part 1032 when the processed wafer W is transferred to the substrate conveying device 1111, so that it is held by the holding member 1311 The wafer W is placed on a support pin not shown. In addition, the substrate holding mechanism 1030 transfers the wafer W placed on a support pin (not shown) to the substrate transfer device 1111.

液供給部40_1，係具備有噴嘴1041a、支臂1042及旋轉升降機構1043。噴嘴1041a，係經由閥1044a連接有面塗層液供給源1045a。該液供給部40_1，係從噴嘴1041a供給面塗層液。 The liquid supply part 40_1 is equipped with a nozzle 1041a, a support arm 1042, and a rotating lifting mechanism 1043. The nozzle 1041a is connected to a topcoat liquid supply source 1045a via a valve 1044a. The liquid supply part 40_1 supplies the topcoat liquid from the nozzle 1041a.

回收罩杯1050，係以包圍旋轉保持部1031的方式而配置，捕捉因旋轉保持部1031之旋轉而從晶圓W飛散的處理液。在回收杯體1050的底部，係形成有排液口1051，藉由回收罩杯1050所捕捉的處理液，係從該排液口1051排出至第1液處理單元1014的外部。又，在回收杯體1050之底部係形成有排氣口1052，該排氣口1052係將藉由流體供給部1032所供給的N2氣體或從FFU1021所供給的惰性氣體排出到第1液體處理單元1014之外部。 The recovery cup 1050 is arranged to surround the rotation holding portion 1031 and captures the processing liquid scattered from the wafer W due to the rotation of the rotation holding portion 1031. A drain port 1051 is formed at the bottom of the recovery cup 1050, and the processing liquid captured by the recovery cup 1050 is discharged from the drain port 1051 to the outside of the first liquid processing unit 1014. In addition, an exhaust port 1052 is formed at the bottom of the recovery cup 1050. The exhaust port 1052 discharges the N 2 gas supplied by the fluid supply unit 1032 or the inert gas supplied from the FFU 1021 to the first liquid treatment The exterior of unit 1014.

<基板洗淨系統的具體動作> <Specific actions of substrate cleaning system>

其次，參閱圖12，說明關於基板洗淨系統1001的具體動作。圖12，係表示第2實施形態之基板洗淨之處理步驟的流程圖。另外，圖12所示的各處理步驟，係根據控制裝 置4A或控制裝置4的控制而進行。 Next, referring to FIG. 12, the specific operation of the substrate cleaning system 1001 will be described. Fig. 12 is a flowchart showing the processing procedure of substrate cleaning in the second embodiment. In addition, the processing steps shown in Figure 12 are based on the control device Set 4A or the control of the control device 4.

在第2實施形態之基板洗淨系統1001中，係在第1處理裝置1002中，進行從圖12所示之乾蝕刻處理(步驟S201)至第1搬出處理(步驟S204)的處理，在第2處理裝置1中，進行從基板搬入處理(步驟S205)至第2搬出處理(步驟S210)的處理。 In the substrate cleaning system 1001 of the second embodiment, in the first processing apparatus 1002, the process from the dry etching process (step S201) to the first unloading process (step S204) shown in FIG. 12 is performed. In the second processing apparatus 1, the processing from the substrate carry-in processing (step S205) to the second carry-out processing (step S210) is performed.

如圖12所示，首先，在乾蝕刻單元1012中進行乾蝕刻處理(步驟S201)。在該乾蝕刻處理中，乾蝕刻單元1012會對晶圓W進行乾蝕刻或灰化。藉此，設置於晶圓W之內部的Cu配線便露出(參閱圖6)。 As shown in FIG. 12, first, a dry etching process is performed in the dry etching unit 1012 (step S201). In this dry etching process, the dry etching unit 1012 performs dry etching or ashing on the wafer W. Thereby, the Cu wiring provided inside the wafer W is exposed (see FIG. 6).

接著，晶圓W被搬入至第1液處理單元1014。由於該搬入處理，係經由裝載鎖定室1013而進行，因此，可防止所露出的Cu配線氧化。 Next, the wafer W is carried in to the first liquid processing unit 1014. Since this loading process is performed via the load lock chamber 1013, it is possible to prevent the exposed Cu wiring from oxidizing.

接下來，在第1液處理單元1014中，係進行成膜處理液供給處理(步驟S202)。在該成膜處理液供給處理中，液供給部40_1之噴嘴1041a位於晶圓W的中央上方。其後，將成膜處理液即面塗層液從噴嘴1041a供給至未形成光阻膜之電路形成面即晶圓W的主面。 Next, in the first liquid processing unit 1014, a film formation processing liquid supply process is performed (step S202). In this film forming process liquid supply process, the nozzle 1041a of the liquid supply part 40_1 is positioned above the center of the wafer W. After that, the top coat liquid, which is the film-forming treatment liquid, is supplied from the nozzle 1041a to the main surface of the wafer W, which is the circuit formation surface on which the photoresist film is not formed.

供給至晶圓W的面塗層液，係藉由伴隨著晶圓W之旋轉的離心力而擴散於晶圓W的主面。藉此，在晶圓W之主面整體形成有面塗層液的液膜(參閱圖7A)。 The topcoat liquid supplied to the wafer W is diffused on the main surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, a liquid film of the topcoat liquid is formed on the entire main surface of the wafer W (see FIG. 7A).

接著，在第1液處理單元1014中，係進行乾燥處理(步驟S203)。在該乾燥處理中，係藉由使例如晶圓W之旋轉速度增加預定時間的方式，使面塗層液乾燥。藉 此，促進面塗層液所含之揮發成分的揮發，面塗層液便固化或硬化，在晶圓W的主面整體形成面形成面塗層膜。 Next, in the first liquid processing unit 1014, a drying process is performed (step S203). In this drying process, the topcoat liquid is dried by increasing the rotation speed of the wafer W for a predetermined time, for example. borrow Therefore, the volatilization of the volatile components contained in the top coating liquid is promoted, and the top coating liquid is cured or hardened, and a top coating film is formed on the entire main surface of the wafer W.

接著，在第1液處理單元1014中，係進行第1搬出處理(步驟S204)。在該第1搬出處理中，基板搬送裝置1111從第1液處理單元1014取出晶圓W而搬送至載置部1010，且收容於被載置在載置部1010的載體C。 Next, in the first liquid processing unit 1014, a first unloading process is performed (step S204). In this first unloading process, the substrate transport device 1111 takes out the wafer W from the first liquid processing unit 1014 and transports the wafer W to the placement section 1010, and is accommodated in the carrier C placed on the placement section 1010.

此時，晶圓W之所露出的Cu配線，係在乾蝕刻後，於短時間內被面塗層膜覆蓋。亦即，由於Cu配線，係成為與外氣隔絕的狀態，因此，不會受到氧化等的不良影響。 At this time, the exposed Cu wiring on the wafer W is covered by the top coat film in a short time after dry etching. That is, since the Cu wiring is in a state isolated from the outside air, it will not be adversely affected by oxidation or the like.

因此，根據第2實施形態之基板洗淨系統1001，由於不需要用於遵守從乾蝕刻後起至洗淨之Q-time的時間管理，因此，可使生產率提升。 Therefore, according to the substrate cleaning system 1001 of the second embodiment, since it is not necessary to observe the Q-time from dry etching to cleaning, the productivity can be improved.

接著，進行基板搬入處理(步驟S205)。在該基板搬入處理中，收容於載體C的晶圓W，係從第1處理裝置1002被搬送至第2處理裝置1的載體載置部11。其後，晶圓W，係藉由第2處理裝置1的基板搬送裝置121(參閱圖2)從載體C被取出，經由收授部122、基板搬送裝置131而被搬入至基板洗淨裝置14。 Next, the substrate carrying-in process is performed (step S205). In this substrate loading process, the wafer W contained in the carrier C is transported from the first processing apparatus 1002 to the carrier placing section 11 of the second processing apparatus 1. After that, the wafer W is taken out from the carrier C by the substrate transfer device 121 (see FIG. 2) of the second processing device 1, and is transferred to the substrate cleaning device 14 via the receiving unit 122 and the substrate transfer device 131 .

而且，搬入至腔室20內的晶圓W，係藉由基板保持機構30的保持構件311而保持。此時，晶圓W，係於圖案形成面朝向了上方的狀態下，被保持於保持構件311。其後，旋轉保持部31藉由驅動部而旋轉。藉此，晶圓W，係在被水平保持於旋轉保持部31的狀態下，與旋轉 保持部31一起旋轉。 In addition, the wafer W carried in the chamber 20 is held by the holding member 311 of the substrate holding mechanism 30. At this time, the wafer W is held by the holding member 311 with the pattern formation surface facing upward. After that, the rotation holding portion 31 is rotated by the driving portion. With this, the wafer W is held horizontally by the rotation holding portion 31, and is The holding portion 31 rotates together.

接著，在基板洗淨裝置14中，係進行剝離處理液供給處理(步驟S206)。在該剝離處理液供給處理中，係從噴嘴41與噴嘴52對形成於晶圓W上的面塗層膜，供給剝離處理液即HFE。供給至面塗層膜的HFE，係藉由伴隨著晶圓W之旋轉的離心力而擴散於面塗層膜上(參閱圖7B)。 Next, in the substrate cleaning apparatus 14, a peeling treatment liquid supply process is performed (step S206). In this peeling treatment liquid supply process, the top coat film formed on the wafer W is supplied from the nozzle 41 and the nozzle 52 to the HFE that is the peeling treatment liquid. The HFE supplied to the top coating film is diffused on the top coating film by the centrifugal force accompanying the rotation of the wafer W (see FIG. 7B).

HFE，係浸透於面塗層膜中而到達至晶圓W的界面，且浸透於晶圓W的界面(圖案形成面)，使面塗層膜從晶圓W剝離。藉此，附著於晶圓W之圖案形成面的不要物P便與面塗層膜一起從晶圓W被剝離(參閱圖7C)。 HFE penetrates into the topcoat film to reach the interface of the wafer W, and penetrates into the interface (pattern formation surface) of the wafer W to peel the topcoat film from the wafer W. Thereby, the unnecessary objects P attached to the pattern formation surface of the wafer W are peeled off from the wafer W together with the top coating film (see FIG. 7C).

在此，在第2實施形態中，作為不要物P，不僅微粒，另含有因乾蝕刻而產生的反應生成物。在乾蝕刻中使用了CF系氣體的情況下，該反應生成物，係含氟化合物，具有可溶於具有例如過氟化烷基之HFE的性質。在圖7C的狀態中，大部分的反應生成物雖因面塗層液之體積收縮而從晶圓W被拉離，但亦有略殘留於晶圓W的情況。即便在像這樣的情況下，在使用了上述的HFE時，浸透而到達至晶圓W之界面的HFE亦可使略殘留的反應生成物溶解。另外，該效果，係不限於HFE，即便為HFC等之其他氟系的溶媒，亦可獲得。 Here, in the second embodiment, as the unnecessary substance P, not only fine particles but also reaction products generated by dry etching are included. When a CF-based gas is used for dry etching, the reaction product is a fluorine-containing compound and has a property of being soluble in HFE having, for example, a perfluoroalkyl group. In the state of FIG. 7C, although most of the reaction products are pulled away from the wafer W due to the volume shrinkage of the topcoat liquid, they may remain slightly on the wafer W. Even in such a case, when the above-mentioned HFE is used, the HFE that has penetrated and reached the interface of the wafer W can also dissolve the slightly remaining reaction product. In addition, this effect is not limited to HFE, and can be obtained even with other fluorine-based solvents such as HFC.

接著，在基板洗淨裝置14中，係進行溶解處理液供給處理(步驟S207)。在該溶解處理液供給處理中，係從噴嘴41與噴嘴51對從晶圓W所剝離的面塗層膜， 供給溶解處理液即IPA。藉此，面塗層膜便溶解。 Next, in the substrate cleaning device 14, the dissolution treatment liquid supply process is performed (step S207). In this dissolving treatment liquid supply process, the top coat film peeled from the wafer W is paired from the nozzle 41 and the nozzle 51, Supply the dissolution treatment liquid, namely IPA. Thereby, the top coat film dissolves.

接著，在基板洗淨裝置14中，係進行沖洗處理(步驟S208)。在該沖洗處理中，係從噴嘴41與噴嘴51對旋轉之晶圓W供給相對性較步驟S207更大流量的IPA，藉此，浮游於溶解之面塗層膜或IPA中的不要物P則與IPA一起從晶圓W被去除。 Next, in the substrate cleaning device 14, a rinse process is performed (step S208). In this rinsing process, the rotating wafer W is supplied from the nozzle 41 and the nozzle 51 with a relatively larger flow rate of IPA than in step S207, whereby the unwanted matter P floating in the dissolved topcoat film or IPA is It is removed from the wafer W together with IPA.

接著，在基板洗淨裝置14中，係進行乾燥處理(步驟S209)。在該乾燥處理中，係藉由使例如晶圓W之旋轉速度增加預定時間的方式，甩去殘存於晶圓W之表面的IPA，使晶圓W乾燥。其後，晶圓W的旋轉便停止。 Next, in the substrate cleaning device 14, a drying process is performed (step S209). In this drying process, for example, the rotation speed of the wafer W is increased for a predetermined time to shake off the IPA remaining on the surface of the wafer W, and the wafer W is dried. After that, the rotation of the wafer W is stopped.

接著，在基板洗淨裝置14中，係進行第2搬出處理(步驟S210)。在該第2搬出處理中，係藉由基板搬送裝置131(參閱圖2)，從基板洗淨裝置14之腔室20取出晶圓W。 Next, in the substrate cleaning device 14, the second unloading process is performed (step S210). In this second unloading process, the wafer W is taken out from the chamber 20 of the substrate cleaning device 14 by the substrate transfer device 131 (see FIG. 2).

其後，晶圓W，係經由收授部122及基板搬送裝置121，被收容於載置在載體載置部11的載體C。當該第2搬出處理結束時，則針對1片晶圓W的基板洗淨處理便結束。 After that, the wafer W is housed in the carrier C placed on the carrier placing section 11 via the receiving section 122 and the substrate transfer device 121. When this second unloading process is completed, the substrate cleaning process for one wafer W is completed.

如以上說明般，第2實施形態之基板洗淨系統1001，係具備有第1處理裝置1002與第2處理裝置1(基板洗淨系統1)。而且，在第1處理裝置1002的成膜處理液供給部(液供給部40_1)所致之成膜處理液的供給後，將面塗層液固化或硬化而形成有處理膜的晶圓W收容於載體C。而且，在第2處理裝置1中，取出被收容於載體C的晶 圓W，供給剝離處理液。藉此，除了第1實施形態的效果以外，另可獲得Q-time的緩和所致之生產率提升的效果。 As described above, the substrate cleaning system 1001 of the second embodiment includes a first processing device 1002 and a second processing device 1 (substrate cleaning system 1). Then, after the supply of the film-forming processing liquid by the film-forming processing liquid supply part (liquid supply part 40_1) of the first processing device 1002, the topcoat liquid is cured or hardened to form the wafer W on which the processing film is formed.于Vector C. Furthermore, in the second processing apparatus 1, the crystal contained in the carrier C is taken out Circle W, supply the stripping treatment liquid. Thereby, in addition to the effect of the first embodiment, the effect of improving productivity due to the relaxation of Q-time can be obtained.

在第2實施形態中，雖係將處理對象之基板設成為露出了形成於內部之Cu配線的至少一部分之乾蝕刻後或灰化後的晶圓W，但並不限於此，即便為露出了其他金屬配線的基板亦可應用。又，並不限於金屬配線，亦可應用於應防止Ge或III-V族的材料等接觸於氧之材質露出的材料。 In the second embodiment, the substrate to be processed is provided as a dry-etched or ashed wafer W in which at least a part of the Cu wiring formed inside is exposed, but it is not limited to this, even if it is exposed Other metal wiring substrates can also be used. In addition, it is not limited to metal wiring, and can also be applied to materials that should prevent exposure of materials such as Ge or III-V materials from contacting oxygen.

另外，第1及第2實施形態所使用的成膜處理液，係不限定於具有可實際在微影工程中應用之性質的面塗層液，只要為使用圖1A~圖1E或圖7A~圖7E所說明，使其確實進行固化或硬化、剝離、溶解這樣的作用之最佳化的含有極性有機物之液體即可。 In addition, the film-forming treatment liquid used in the first and second embodiments is not limited to a top coat liquid having properties that can be actually used in lithography processes, as long as it uses Figure 1A~Figure 1E or Figure 7A~ As illustrated in Fig. 7E, a liquid containing a polar organic substance is sufficient to optimize the effects of solidification, hardening, peeling, and dissolution.

Claims (13)

一種用於洗淨包含Ge或III-V族的材料之基板的基板洗淨方法，其特徵係，包含有：成膜處理液供給工程，將包含有揮發成分且含有用以在乾蝕刻或灰化後的基板上形成膜之極性有機物的成膜處理液供給至包含Ge或III-V族的材料之前述基板；剝離處理液供給工程，對藉由前述揮發成分產生揮發而前述成膜處理液在前述基板上固化或硬化而成的處理膜，供給使該處理膜從前述基板剝離並包含非極性溶媒的剝離處理液；溶解處理液供給工程，在前述剝離處理液供給工程後，對前述處理膜供給使該處理膜溶解並包含極性溶媒的溶解處理液；及沖洗處理液供給工程，在前述溶解處理液供給工程後，對前述基板供給包含極性溶媒的沖洗處理液，前述剝離處理液，係不含有水分，前述溶解處理液，係不含有水分，前述沖洗處理液，係不含有水分。 A substrate cleaning method for cleaning substrates containing Ge or III-V materials, which is characterized by: a film-forming treatment liquid supply process, which contains volatile components and is used for dry etching or ash The film-forming treatment liquid of the polar organic substance forming the film on the substrate is supplied to the substrate containing Ge or III-V group material; the stripping treatment liquid supply process is to volatilize the volatile component and the film-forming treatment liquid The treatment film cured or hardened on the aforementioned substrate is supplied with a stripping treatment liquid that peels the treatment film from the aforementioned substrate and contains a non-polar solvent; the dissolving treatment liquid supply process, after the stripping treatment liquid supply process, the treatment Film supply dissolves the treatment film and contains a polar solvent dissolution treatment liquid; and a rinse treatment liquid supply process. After the dissolution treatment liquid supply process, a rinse treatment liquid containing a polar solvent is supplied to the substrate. The peeling treatment liquid is Does not contain water, the dissolution treatment liquid does not contain water, and the rinse treatment liquid does not contain water. 如申請專利範圍第1項之基板洗淨方法，其中，前述成膜處理液，係含有極性有機物即合成樹脂的液體。 Such as the substrate cleaning method of the first item in the scope of the patent application, wherein the aforementioned film-forming treatment liquid is a liquid containing a synthetic resin that is a polar organic substance. 如申請專利範圍第1或2項之基板洗淨方法，其中， 前述極性溶媒，係包含有醇類、PGMEA、PGME及MIBC中的至少1個溶媒。 For example, the substrate cleaning method of item 1 or 2 of the scope of patent application, among which, The aforementioned polar solvent includes at least one solvent among alcohols, PGMEA, PGME, and MIBC. 如申請專利範圍第1或2項之基板洗淨方法，其中，前述非極性溶媒，係包含有氟系的溶媒。 For example, the substrate cleaning method of item 1 or 2 of the scope of patent application, wherein the aforementioned non-polar solvent contains a fluorine-based solvent. 如申請專利範圍第4項之基板洗淨方法，其中，前述非極性溶媒，係包含有HFE、HFC、HFO及PFC中的至少1個溶媒。 For example, the substrate cleaning method of the fourth item of the scope of patent application, wherein the aforementioned non-polar solvent includes at least one solvent among HFE, HFC, HFO, and PFC. 如申請專利範圍第1或2項之基板洗淨方法，其中，前述基板，係具有藉由Ge或III-V族的材料所形成之膜。 Such as the substrate cleaning method of the first or second patent application, wherein the aforementioned substrate has a film formed of Ge or III-V group material. 如申請專利範圍第1或2項之基板洗淨方法，其中，前述基板，係具有藉由金屬材料所形成之配線圖案。 Such as the substrate cleaning method of item 1 or 2 in the scope of the patent application, wherein the substrate has a wiring pattern formed by a metal material. 如申請專利範圍第1或2項之基板洗淨方法，其中，在前述成膜處理液供給工程中，在將前述成膜處理液供給至前述基板之表面的期間或將前述成膜處理液供給至前述基板後，對前述基板之背面的周緣部供給前述溶解處理液。 Such as the substrate cleaning method of claim 1 or 2, wherein, in the film formation treatment liquid supply process, the film formation treatment liquid is supplied to the surface of the substrate or the film formation treatment liquid is supplied After reaching the substrate, the dissolution treatment liquid is supplied to the peripheral edge of the back surface of the substrate. 如申請專利範圍第1或2項之基板洗淨方法，其中，更 包含有：收容工程，在前述成膜處理液供給工程後，將藉由前述揮發成分產生揮發而前述成膜處理液固化或硬化以形成有處理膜的基板收容至搬送容器；及取出工程，取出被收容於前述搬送容器之前述成膜處理液供給工程後的基板，前述剝離處理液供給工程，係對在前述取出工程中所取出的基板供給前述剝離處理液。 For example, the substrate cleaning method of item 1 or 2 of the scope of patent application, which is more Including: a storage process, after the film-forming treatment liquid supply process, evaporate the volatile components and solidify or harden the film-forming treatment liquid to form a substrate into a transport container; and take-out process, take out The substrate after the film-forming processing liquid supply process contained in the transport container, and the peeling processing liquid supply process is to supply the peeling processing liquid to the substrate taken out in the take-out process. 如申請專利範圍第9項之基板洗淨方法，其中，前述基板，係具有被形成於內部之金屬配線，在乾蝕刻後或灰化後，至少一部分露出。 For example, the substrate cleaning method of claim 9, wherein the substrate has metal wiring formed inside, and at least part of it is exposed after dry etching or ashing. 如申請專利範圍第10項之基板洗淨方法，其中，在前述乾蝕刻中，係使用CF系氣體，前述剝離處理液，係氟系的溶媒。 For example, the substrate cleaning method of claim 10, wherein in the dry etching, a CF-based gas is used, and the peeling treatment liquid is a fluorine-based solvent. 一種用於洗淨包含Ge或III-V族的材料之基板的基板洗淨系統，其特徵係，具備有：處理液供給部，被構成為將包含有揮發成分與極性有機物的成膜處理液、包含有不含水分之非極性溶媒的剝離處理液、包含有不含水分之極性溶媒的溶解處理液及包含有不含水分之極性溶媒的沖洗處理液供給至包含Ge或III-V族的材料之基板；及 控制裝置，包含有被構成為控制前述處理液供給部的電路，前述電路，係以「將用以在乾蝕刻或灰化後的前述基板上形成膜之前述成膜處理液供給至前述基板，並對藉由前述揮發成分產生揮發而前述成膜處理液在前述基板上固化或硬化而成的處理膜，供給使該處理膜從前述基板剝離的前述剝離處理液，在前述剝離處理液的供給後，對前述處理膜供給使該處理膜溶解的前述溶解處理液，在前述溶解處理液的供給後，對前述基板供給前述沖洗處理液」的方式，控制前述處理液供給部。 A substrate cleaning system for cleaning substrates containing Ge or III-V group materials, which is characterized by having: a processing liquid supply part configured to form a film-forming processing liquid containing volatile components and polar organic substances , The stripping treatment liquid containing a non-polar solvent containing no moisture, the dissolving treatment liquid containing a polar solvent containing no moisture, and the rinsing treatment liquid containing a polar solvent containing no moisture are supplied to those containing Ge or III-V The substrate of the material; and The control device includes a circuit configured to control the processing liquid supply unit, and the circuit is configured to supply the film-forming processing liquid for forming a film on the substrate after dry etching or ashing to the substrate, For the treatment film formed by the volatilization of the volatile components and the film-forming treatment liquid solidified or hardened on the substrate, the stripping treatment liquid for peeling the treatment film from the substrate is supplied, and the stripping treatment liquid is supplied After that, the dissolution treatment liquid for dissolving the treatment film is supplied to the treatment film, and after the dissolution treatment liquid is supplied, the rinse treatment liquid is supplied to the substrate, and the treatment liquid supply unit is controlled. 一種記憶媒體，係記憶有在電腦上動作而控制基板洗淨系統之程式的電腦可讀取之記憶媒體，其特徵係，前述程式，係在執行時，以進行如申請專利範圍第1~11項中任一項之基板洗淨方法的方式，使電腦控制前述基板洗淨系統。 A memory medium is a computer-readable memory medium that stores a program that operates on a computer to control the substrate cleaning system. The feature is that the aforementioned program is executed when the application is in the first to 11th The substrate cleaning method of any one of the items allows a computer to control the aforementioned substrate cleaning system.
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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7142461B2 (en) * 2018-05-14 2022-09-27 東京エレクトロン株式会社 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM
EP3576133B1 (en) * 2018-05-31 2023-11-22 SCREEN Holdings Co., Ltd. Substrate processing method
JP7058735B2 (en) * 2018-06-27 2022-04-22 東京エレクトロン株式会社 Board cleaning method, board cleaning system and storage medium
JP7232583B2 (en) * 2018-07-25 2023-03-03 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing apparatus
JP6557796B1 (en) * 2019-02-13 2019-08-07 ジャパン・フィールド株式会社 Method of cleaning an object to be cleaned using a mixed cleaning solvent
JP7355535B2 (en) * 2019-06-28 2023-10-03 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing apparatus
JP7292192B2 (en) * 2019-11-29 2023-06-16 株式会社Ｓｃｒｅｅｎホールディングス SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECIPE SELECTION METHOD
CN112885719A (en) 2019-11-29 2021-06-01 株式会社斯库林集团 Substrate processing method, substrate processing apparatus, and recipe selection method
JP7296309B2 (en) * 2019-11-29 2023-06-22 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing apparatus
TWI794774B (en) * 2020-03-24 2023-03-01 日商斯庫林集團股份有限公司 Substrate processing method and substrate processing apparatus
KR20230100232A (en) * 2021-12-28 2023-07-05 세메스 주식회사 Apparatus for treating substrate and method for processing a substrate
JP7451595B2 (en) 2022-05-09 2024-03-18 セメス カンパニー，リミテッド Substrate processing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090011369A1 (en) * 2007-07-05 2009-01-08 Asml Netherlands B.V. Lithographic method and device manufactured thereby
US20150064910A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing system and memory medium
US20150128994A1 (en) * 2013-11-13 2015-05-14 Tokyo Electron Limited Substrate cleaning method, substrate cleaning system, and memory medium

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3690619B2 (en) * 1996-01-12 2005-08-31 忠弘 大見 Cleaning method and cleaning device
US6349096B1 (en) * 1997-09-22 2002-02-19 Integrated Telecom Express, Inc. Configurable digital subscriber loop access and end-to-end data and analog voice connection system
JP5732199B2 (en) * 2010-01-04 2015-06-10 旭硝子株式会社 Substrate cleaning method
JP5543633B2 (en) * 2012-11-26 2014-07-09 東京エレクトロン株式会社 Substrate cleaning system, substrate cleaning method, and storage medium
JP6022490B2 (en) 2013-08-27 2016-11-09 東京エレクトロン株式会社 Substrate processing method, substrate processing system, and storage medium
JP6193813B2 (en) * 2014-06-10 2017-09-06 信越化学工業株式会社 Temporary adhesive material for wafer processing, wafer processed body, and thin wafer manufacturing method using the same
JP6426936B2 (en) 2014-07-31 2018-11-21 東京エレクトロン株式会社 Substrate cleaning method and storage medium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090011369A1 (en) * 2007-07-05 2009-01-08 Asml Netherlands B.V. Lithographic method and device manufactured thereby
US20150064910A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing system and memory medium
US20150128994A1 (en) * 2013-11-13 2015-05-14 Tokyo Electron Limited Substrate cleaning method, substrate cleaning system, and memory medium

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