JPWO2020102657A5

JPWO2020102657A5 -

Info

Publication number: JPWO2020102657A5
Application number: JP2021526290A
Authority: JP
Publication date: 2022-11-09
Anticipated expiration: 2039-11-15

Claims

A processing system for performing a wet etching process on a substrate, comprising:
a wet process chamber configured to perform a wet chemical process;
a substrate holder within the wet process chamber, the substrate holder configured to support a substrate having a first material and a second material ;
A chemical delivery system configured to deliver a first chemical solution and a second chemical solution, wherein the second chemical solution is different than the first chemical solution and ,
a chemical injection manifold fluidly coupled to the wet process chamber, the chemical injection manifold configured to cyclically distribute the first chemical solution and the second chemical solution;
selecting the first material relative to the second material by performing the wet etching process to control the duration of each dispensing cycle of the first chemical solution and the second chemical solution; a controller programmable to remove the
has
The controller, at each dispensing cycle,
controlling the chemical injection manifold to expose the substrate to the first chemical solution to chemically modify the first material to form a chemically modified layer;
Controlling the chemical injection manifold to form the chemically modified layer comprises controlling the chemical injection manifold to dispense the first chemical solution onto the surface of the substrate. , the first chemical solution chemically modifies the surface of the substrate to form the chemically modified layer;
controlling the chemical injection manifold to remove the chemical modification layer without removing the second material; and controlling the chemical injection manifold to remove the chemical modification layer. comprises dispensing said second chemical solution onto said chemically modified layer;
A processing system configured to:

2. The processing system of claim 1, wherein said first chemical solution comprises an oxidizing agent.

3. The processing system of claim 2, wherein said first chemical solution comprises an oxygen saturated chemical solution.

4. The treatment system of claim 3, wherein the first chemical solution comprises an oxygen saturated chemical solution comprising oxygen dissolved in water, alcohol, or acetone.

5. The treatment system of Claim 4, wherein the chemical supply system is further configured to supply a complexing agent.

6. The treatment system of claim 5, wherein said complexing agent comprises citrate.

3. The processing system of claim 1, wherein the chemical supply system is further arranged to supply a solvent rinse solution.

The controller is programmed to control the chemical injection manifold to provide the solvent rinse solution after chemically modifying the surface and prior to selectively removing the chemically modified layer. 8. The processing system of claim 7, configured to enable.

2. The controller of claim 1, wherein the controller is programmable to provide the cyclic dispensing of the first chemical solution and the second chemical solution partially overlapping in time. processing system.

2. The process of claim 1, wherein the controller is programmable to provide the cyclic distribution of the first chemical solution and the second chemical solution in a non-overlapping manner in time. system.

2. The treatment system of claim 1, wherein said first chemical solution comprises a complexing agent and said second chemical solution comprises water.

A platform for etching a substrate having polycrystalline material, comprising:
a dry etching apparatus configured to etch the polycrystalline material;
A wet etching apparatus configured to selectively etch the polycrystalline material with respect to another material on the substrate, comprising:
controlling a wet process chamber, a substrate holder configured to support the substrate in the wet process chamber, a chemical supply system, a chemical injection manifold, and at least the chemical injection manifold to control the other a controller configured to selectively etch the polycrystalline material with respect to the material of
configured to provide a first chemical solution and a second chemical solution on the substrate in the wet process chamber , the second chemical solution being different than the first chemical solution;
the first chemical solution is configured to chemically modify the polycrystalline material to produce a chemically modified layer;
the second chemical solution is configured to remove the chemically modified layer without removing the further material ;
a wet etching device ;
a transfer module for moving the substrate between the dry etching equipment and the wet etching equipment ;
an isolation pass-through module disposed between the transfer module and the wet etching equipment to separate a transfer module environment of the transfer module from a wet etching equipment environment of the wet etching equipment;
platform .

13. The platform of claim 12, wherein said polycrystalline material is a transition metal.

The dry etching equipment is configured to first etch the polycrystalline material to a first surface roughness value and the wet etching equipment subsequently etches the polycrystalline material to a second surface roughness value. 13. The platform of claim 12, wherein the second surface roughness value is less than the first surface roughness value.

4. The platform is configured to maintain the substrate in a controlled environment without exposure to ambient conditions as the substrate is transferred from the dry etching equipment to the wet etching equipment. 14. The platform according to 14.

16. The platform of claim 15, wherein said first chemical solution comprises an oxidizing agent.

17. The platform of claim 16, wherein the wet etching equipment is further arranged to supply a solvent rinse solution.

18. The method of claim 17, wherein the wet etching equipment is configured to provide the solvent rinse solution after chemically modifying the surface and prior to selectively removing the chemically modified layer. Platforms listed.

4. The platform is configured to maintain the substrate in a controlled environment without exposure to ambient conditions as the substrate is transferred from the dry etching equipment to the wet etching equipment. 13. The platform according to 12.

13. The platform of Claim 12, wherein the first chemical solution comprises an oxidizing agent.

Controlling the chemical injection manifold to form the chemically modified layer further comprises controlling the chemical injection manifold to distribute the complexing agent to the surface of the substrate. 6. The processing system of claim 5.

22. The processing system of claim 21, wherein said first chemical solution comprises a complexing agent.