JP2017010991A - Semiconductor device manufacturing member, semiconductor device and method of manufacturing the same, thermoset resin composition, and thermoset resin film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing member capable of thinning a semiconductor device while sufficiently encapsulating a semiconductor element.SOLUTION: A semiconductor device manufacturing member 120a used for re-arrangement of a semiconductor element comprises: a semiconductor element 122 that has an active plane 122a and a passive plane 122b provided at an opposite side to the active plane 122a; and a thermoset resin composition layer 124 abutting on the passive plane 122b of the semiconductor element 122.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a semiconductor device manufacturing member, a semiconductor device and a manufacturing method thereof, a thermosetting resin composition, and a thermosetting resin film, and more particularly, a semiconductor device manufacturing member; a method of manufacturing a semiconductor device using the same A semiconductor device obtained by the manufacturing method; a thermosetting resin composition used in the semiconductor device manufacturing member, a semiconductor device, and a manufacturing method thereof; a thermosetting resin film using the thermosetting resin composition; The present invention relates to a semiconductor device obtained using a thermosetting resin film. More particularly, the present invention relates to a semiconductor device manufacturing member and a method of manufacturing a semiconductor device using the same for manufacturing a wafer level semiconductor device which is highly required to be reduced in size and thickness.

  As electronic devices become more sophisticated, semiconductor devices are becoming smaller and thinner. In recent years, semiconductor devices have become lighter, thinner, and smaller, and mounting forms such as chip size packages that are almost the same size as semiconductor elements and package-on-packages in which semiconductor devices are stacked on top of semiconductor devices have also been actively performed. In the future, it is expected that semiconductor devices will become increasingly smaller and thinner. As one form of this chip size package, a wafer level chip size package manufactured at a wafer level has attracted attention as a technique for realizing an extremely small semiconductor device.

  By the way, a wafer level semiconductor device such as a wafer level chip size package is obtained by forming a rewiring layer on a wafer, providing external connection terminals such as solder balls, and then dicing into pieces. In such a method, when the number of terminals is about several tens to 100 pins, external connection terminals such as solder balls can be provided on the wafer.

  However, when the miniaturization of semiconductor elements progresses and the number of terminals increases to 100 pins or more, it becomes difficult to form a rewiring layer only on the wafer and provide external connection terminals. When the external connection terminals are forcibly provided, the pitch between the terminals is reduced and the heights of the terminals are reduced, so that it is difficult to ensure connection reliability after mounting the semiconductor device. For this reason, it is required to cope with miniaturization of semiconductor elements, that is, an increase in the number of external connection terminals.

  Against this background, in recent years, after obtaining a semiconductor element by dividing a wafer into a predetermined size, a semiconductor device in which an external connection terminal can be provided outside the semiconductor element by rearranging the semiconductor element Is under development (see, for example, Patent Documents 1 to 3 below). In the semiconductor devices described in Patent Documents 1 to 3, the semiconductor element is obtained by dividing the wafer into a predetermined size, and then the semiconductor element is rearranged. It can be ensured widely, and it is possible to cope with the increase in the number of pins of the semiconductor element.

  On the other hand, from the viewpoint of improving the workability of miniaturized and thinned semiconductor elements, a method of using a molded body in which a plurality of semiconductor elements are sealed with plastic has been proposed (for example, see Patent Document 4). .

  Next, an example of a conventional method for manufacturing a semiconductor device will be described with reference to FIGS. 1 to 3 are end views schematically showing a conventional method for manufacturing a semiconductor device. The semiconductor device 30 shown in FIG. 3N is obtained through processes such as rearrangement of semiconductor elements, sealing, formation of a redistribution layer, formation of wiring, formation of external connection terminals, and individualization. .

  First, a temporary fixing film is bonded to one surface of the support 10 to form a temporary fixing layer 12 on the support 10 (see FIG. 1A). Next, the plurality of semiconductor elements 14 are rearranged at predetermined intervals so that the active surface (surface: surface on which a circuit is formed) 14a of the semiconductor element 14 is in contact with the temporary fixing layer 12 (see FIG. 1B). ). Next, the semiconductor element 14 is sealed with a sealing material 16 such as a thermosetting resin, and a curing process is performed as necessary (see FIG. 1C). Next, the support 10 and the temporary fixing layer 12 are peeled off by heating with a hot plate or the like, and the active surface 14a of the semiconductor element 14 is exposed (see FIGS. 1D and 1E).

  Next, a photosensitive resin composition layer 18 is formed on the active surface 14a of the semiconductor element 14 and the sealing material 16 by spin coating or the like (see FIG. 2F). Next, a predetermined portion of the formed photosensitive resin composition layer 18 is exposed and developed, and then post-cured in an oven or the like to form an insulating layer 18a (see FIG. 2G). Next, the seed layer 20 is formed by sputtering or the like (see FIG. 2H). Next, after a circuit forming resist is formed on the seed layer 20 by lamination or the like, a resist pattern 22 is formed by exposing and developing a predetermined portion (see FIG. 2I). Next, a wiring pattern 24 is formed by electroplating (see FIG. 2 (j)).

  Next, the resist 22 for circuit formation is removed with a stripping solution (see FIG. 3K). Next, a part of the seed layer 20 is removed by etching (see FIG. 3L). Next, a photosensitive resin composition layer is formed again by spin coating or the like, a predetermined portion is exposed and developed, and then post-cured in an oven or the like to form the insulating layer 26 (FIG. 3 (m)). reference). Next, after the solder balls 28 are mounted by reflow, the semiconductor device 30 can be manufactured by dicing into pieces (see FIG. 3 (n)).

JP 2004-14789 A JP 2001-244372 A Japanese Patent Laid-Open No. 2001-127095 US Patent Application Publication No. 2007/205513

  Since the semiconductor device obtained by the above method can be reduced in size and thickness, it can be used for electronic devices such as smartphones and tablet terminals whose functions are increasing in function and multifunction. However, there is a problem that the semiconductor device is warped as the semiconductor device is reduced in size and thickness (for example, a problem related to warpage in a process that involves heating). It is necessary to reduce the thickness on the passive surface (surface opposite to the active surface) of the semiconductor element while sealing.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a member for manufacturing a semiconductor device capable of reducing the thickness of the semiconductor device while sufficiently sealing the semiconductor element.

  In addition, the present invention provides a method for manufacturing a semiconductor device using the semiconductor device manufacturing member, a semiconductor device obtained by the manufacturing method, a thermosetting resin composition used for the semiconductor device manufacturing member, and the semiconductor device manufacturing method. It aims at providing the semiconductor device obtained using the thermosetting resin film used for manufacture of a member, and the said thermosetting resin film.

  The present invention relates to a semiconductor device manufacturing member used for rearrangement of a semiconductor element, the semiconductor element having an active surface and a passive surface opposite to the active surface, and the passive surface of the semiconductor element. There is provided a member for manufacturing a semiconductor device, comprising a thermosetting resin composition layer (a) that abuts.

  According to the semiconductor device manufacturing member according to the present invention, since the thermosetting resin composition layer is disposed on the passive surface of the semiconductor element in advance, the thermosetting on the passive surface of the semiconductor element is performed when the semiconductor device is thinned. Even when the conductive resin composition layer is thin, the gap between the semiconductor element and the semiconductor element can be sufficiently sealed. According to such a member for manufacturing a semiconductor device, it is possible to efficiently obtain a thin semiconductor device while suppressing warpage.

  By the way, in the conventional method for manufacturing a semiconductor device, the present inventor manufactures a thin semiconductor device by supplying a thermosetting resin composition containing an inorganic filler onto the semiconductor element and sealing the semiconductor element. In this case, it has been found that the inorganic filler aggregates on the passive surface of the semiconductor element and the flow of the resin is hindered, so that the semiconductor element and the gap between the semiconductor elements are not sufficiently sealed. On the other hand, according to the member for manufacturing a semiconductor device according to the present invention, even if the thermosetting resin composition layer (a) contains an inorganic filler, the thermosetting property is previously formed on the passive surface of the semiconductor element. By disposing the resin composition layer (a), the inorganic filler is prevented from aggregating on the passive surface of the semiconductor element during sealing, and the gap between the semiconductor element and the semiconductor element is sufficiently sealed. Can do.

  The thickness of the thermosetting resin composition layer (a) is preferably 30 to 300 μm. The thermosetting resin composition layer (a) includes a resin containing one or more selected from an epoxy resin, a phenol resin, a cyanate resin, a polyamideimide resin, and a thermosetting polyimide resin, and a maximum particle size of 20 μm or less and an average It is preferable to contain an inorganic filler having a particle size of 5 μm or less.

  The member for manufacturing a semiconductor device according to the present invention may be provided with a support, a temporary fixing layer, the semiconductor element, and the thermosetting resin composition layer (a) in this order.

  The present invention includes (I) a step of rearranging the semiconductor element of the semiconductor device manufacturing member such that the active surface of the semiconductor element and the temporary fixing layer are in contact with each other, and (II) the semiconductor element is heated. Sealing with the curable resin composition layer (a) to form a thermosetting resin composition layer (b) covering the entire semiconductor element; (III) the thermosetting resin composition layer (b) And (IV) forming a photosensitive resin composition layer on the active surface of the semiconductor element in a state where the temporary fixing layer is removed, and (V) ) A step of exposing and developing the photosensitive resin composition layer to form an opening reaching the active surface of the semiconductor element in the photosensitive resin composition layer; (VI) the photosensitive resin A step of curing the composition layer to form an insulating layer (B), (VI ) A step of forming a seed layer on the insulating layer (B), and (VIII) a step of forming a resist for forming a circuit on the seed layer and performing an exposure process and a development process to form a resist pattern for rewiring. (IX) forming a wiring pattern on a portion of the seed layer exposed from the resist pattern, and then removing the resist pattern; and (X) removing a portion of the seed layer exposed from the wiring pattern. (XI) forming an insulating layer (C) having an opening reaching the wiring pattern on the wiring pattern; and (XII) providing an external connection terminal in the opening of the insulating layer (C). The manufacturing method of a semiconductor device provided with the process to form is provided.

  The present invention provides a semiconductor device obtained by the method for manufacturing a semiconductor device.

  The present invention is a thermosetting resin composition used for the thermosetting resin composition layer (a) of the member for manufacturing a semiconductor device, and includes an epoxy resin, a phenol resin, a cyanate resin, a polyamideimide resin, and a thermosetting resin. There is provided a thermosetting resin composition containing a resin containing one or more kinds selected from a curable polyimide resin and an inorganic filler having a maximum particle size of 20 μm or less and an average particle size of 5 μm or less.

  The present invention is a thermosetting resin film used for manufacturing the semiconductor device manufacturing member, comprising a support and a thermosetting resin composition layer laminated on the support, and the thermosetting Provided is a thermosetting resin film in which a resin composition layer contains the thermosetting resin composition.

  The present invention provides a semiconductor device obtained using the thermosetting resin film.

  ADVANTAGE OF THE INVENTION According to this invention, the member for semiconductor device manufacture which can make a semiconductor device thin can be provided, sealing a semiconductor element fully. Moreover, according to this invention, the manufacturing method of the semiconductor device using the said member for semiconductor device manufacture, the semiconductor device obtained by the said manufacturing method, the thermosetting resin composition used for the said member for semiconductor device manufacture, the said semiconductor device A thermosetting resin film used for manufacturing a manufacturing member and a semiconductor device obtained using the thermosetting resin film can be provided.

It is an end view which shows typically the manufacturing method of the conventional semiconductor device. FIG. 2 is an end view schematically showing the continuation of FIG. 1. FIG. 3 is an end view schematically showing the continuation of FIG. 2. It is an end view which shows typically an example of the manufacturing method of the semiconductor device of this invention. FIG. 5 is an end view schematically showing the continuation of FIG. 4. FIG. 6 is an end view schematically showing the continuation of FIG. 5. FIG. 7 is an end view schematically showing the continuation of FIG. 6. FIG. 8 is an end view schematically showing the continuation of FIG. 7.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

<Semiconductor device manufacturing member>
The member for manufacturing a semiconductor device of the present embodiment is a member for manufacturing a semiconductor device used for rearrangement of semiconductor elements. The “rearrangement of semiconductor elements” means, for example, that the semiconductor elements obtained after dividing the silicon wafer into pieces are arranged again. The member for manufacturing a semiconductor device according to the present embodiment includes at least an active surface (surface: a surface on which a circuit is formed; a circuit surface), a semiconductor element having a passive surface opposite to the active surface, and the semiconductor element. A thermosetting resin composition layer (a) in contact with the passive surface. There is no restriction | limiting in the magnitude | size of a semiconductor element, As a semiconductor element, the semiconductor chip obtained by dividing a silicon wafer into a piece is mentioned, for example.

  Examples of the semiconductor device manufacturing member of the present embodiment include semiconductor device manufacturing members 110 and 120a shown in FIG. 4B or FIG. A member 120a for manufacturing a semiconductor device in FIG. 4C has a stacked structure including a semiconductor element 122 and a thermosetting resin composition layer 124 in this order in the stacking direction.

(Thermosetting resin composition layer (a))
The thermosetting resin composition layer (a) is a layer composed of a thermosetting resin composition (a layer formed by forming a thermosetting resin composition), and is formed on a passive surface of a semiconductor element. Layer. The thermosetting resin in the thermosetting resin composition layer (a) is preferably semi-cured or uncured from the viewpoint of post-curing after sealing the semiconductor element.

  In this specification, “semi-cured” means a B-stage (cured intermediate of a thermosetting resin composition as defined in JIS K 6800 “adhesive / adhesive terms”. The resin softens when heated and swells when touched with certain solvents, but does not melt or dissolve completely). “Uncured” means substantially thermosetting in the solvent. It means a state in which all of the resin is dissolved.

  The thickness of the thermosetting resin composition layer (a) (the thickness before sealing the semiconductor element, the thickness T2 in FIG. 4B) is a thickness that can suitably seal the semiconductor element, and preferably 30 to 300 μm. More preferably, it is 50-200 micrometers, More preferably, it is 75-100 micrometers. By setting the thickness of the thermosetting resin composition layer (a) to 300 μm or less, it is suitable for a thin semiconductor device. By setting the thickness of the thermosetting resin composition layer (a) to 30 μm or more, the thermosetting resin composition layer after sealing (thermosetting resin composition layer (b) described later) is uniformly formed. It is possible to improve the smoothness of the passive surface side of the semiconductor element.

  Hereinafter, the thermosetting resin composition suitably used for the thermosetting resin composition layer (a) of the member for manufacturing a semiconductor device of the present embodiment will be further described.

[Thermosetting resin composition]
The thermosetting resin composition of the present embodiment can contain a resin component and an inorganic filler.

  The resin component contained in the thermosetting resin composition of this embodiment is 1 or more types chosen from an epoxy resin, a phenol resin, cyanate resin, a polyamideimide resin, and a thermosetting polyimide resin, for example. The thermosetting resin composition of the present embodiment preferably contains an epoxy resin from the viewpoint of more effectively expressing a low warpage effect and a thinning effect of a semiconductor device. The epoxy resin and the epoxy resin curing agent It is more preferable to contain. Moreover, the thermosetting resin composition of this embodiment may contain carboxylic acid-containing resins such as acrylic resins, acid-modified epoxy acrylates, and acid-containing urethane resins as necessary.

  Although it does not specifically limit as a thermosetting resin composition which comprises a thermosetting resin composition layer (a), It is 1 type chosen from an epoxy resin, a phenol resin, cyanate resin, a polyamideimide resin, and a thermosetting polyimide resin. A thermosetting resin composition containing a resin component (resin) including the above and an inorganic filler having a maximum particle size of 20 μm or less and an average particle size of 5 μm or less is preferable.

(Resin component)
{Epoxy resin}
As an epoxy resin, the epoxy resin which has a 2 or more glycidyl group in 1 molecule is mentioned, for example. Although it does not specifically limit as an epoxy resin, For example, Bisphenol type epoxy resins, such as a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin; Novolak phenol type epoxy resin; Biphenyl type epoxy resin; Naphthalene type epoxy Resin; dicyclopentadiene type epoxy resin; bixylenol type epoxy resin such as bixylenol diglycidyl ether; hydrogenated bisphenol A type epoxy resin such as hydrogenated bisphenol A glycidyl ether; and their dibasic acid-modified diglycidyl ether type An epoxy resin etc. are mentioned. An epoxy resin can be used individually or in combination of 2 or more types.

  Commercially available epoxy resins include naphthalene types such as “EXA4700” (tetrafunctional naphthalene type epoxy resin) manufactured by DIC Corporation, and “NC-7000” (polyfunctional solid epoxy resin containing naphthalene skeleton) manufactured by Nippon Kayaku Co., Ltd. Epoxy resin; Epoxidation product of a condensate of phenols and aromatic aldehyde having a phenolic hydroxyl group (Trisphenol type epoxy resin) such as “EPPN-502H” (Trisphenol epoxy resin) manufactured by Nippon Kayaku Co., Ltd .; Dicyclopentadiene aralkyl-type epoxy resins such as “Epiclon HP-7200H” (dicyclopentadiene skeleton-containing polyfunctional solid epoxy resin) manufactured by DIC Corporation; “NC-3000H” (biphenyl skeleton-containing many) manufactured by Nippon Kayaku Co., Ltd. Biphenyl aralkyl type epoxy resins such as functional solid epoxy resins) D Novolak type epoxy resins such as “Epicron N660”, “Epicron N690” manufactured by C Co., Ltd., “EOCN-104S” manufactured by Nippon Kayaku Co., Ltd .; Tris (2, etc.) such as “TEPIC” manufactured by Nissan Chemical Industries, Ltd. 3-epoxypropyl) isocyanurate; "Epiclon 860", "Epicron 900-IM", "Epicron EXA-4816", "Epicron EXA-4822" manufactured by DIC Corporation, "Araldite AER280" manufactured by Asahi Chiba Corporation, Bisphenol A type epoxy resins such as “Epototo YD-134” manufactured by Nippon Steel Chemical Co., Ltd., “JER834” and “JER872” manufactured by Mitsubishi Chemical Corporation, and “ELA-134” manufactured by Sumitomo Chemical Co., Ltd .; Naphthalene type epoxy resin such as “Epicron HP-4032” manufactured by KK; “Epicron N-740” manufactured by DIC Corporation Epoxy resin of a condensate of phenol and salicylaldehyde; phenol novolak type epoxy resin and the like, and the like manufactured by Nippon Kayaku Co., Ltd., "EPPN-500 series".

  Among the above epoxy resins, biphenyl aralkyl type epoxy resins such as “NC-3000H” (biphenyl skeleton-containing polyfunctional solid epoxy resin) manufactured by Nippon Kayaku Co., Ltd. from the viewpoint of excellent adhesion to copper and insulation. From the viewpoint of high crosslink density and high Tg, “EPPN-500 series” manufactured by Nippon Kayaku Co., Ltd. is preferable.

  The content of the epoxy resin in the thermosetting resin composition layer (a) is preferably 30 to 90 parts by mass, more preferably 40 to 80 parts by mass with respect to 100 parts by mass of the resin component excluding the inorganic filler. Preferably it is 50-80 mass parts.

  When using an epoxy resin as a thermosetting resin, it is preferable to use an epoxy resin curing agent in combination, and a curing accelerator may be used in combination as necessary. As the curing agent combined with the epoxy resin, a conventionally known curing agent for epoxy resin can be used.

  Examples of the epoxy resin curing agent include phenol resins, acid anhydrides, aliphatic amines, alicyclic polyamines, aromatic polyamines, dicyandiamide, and guanidines. Specifically, 4,4′-diaminodiphenylsulfone, 4,4′-bis (4-aminophenoxy) biphenyl, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 1,3- Bis (4-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, trimethylenebis (4-aminobenzoate), 3,3′-dimethyl-4,4′-diaminobiphenyl, 2,2 '-Dimethyl-4,4'-diaminobiphenyl, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-amino Phenoxy) phenyl] sulfone, 9,9′-bis (4-aminophenyl) fluorene, 2,2-bis [4- (4-amino) Phenoxy) phenyl] hexafluoropropane, and the like. The epoxy resin curing agent can be used alone or in combination of two or more.

  Further, as a curing agent for epoxy resin, a phenol resin, cyanate resin, polyamideimide resin, and thermosetting polyimide resin, which will be described later, which are preferably used for the thermosetting resin composition of the present embodiment, may be used. From the viewpoint of more effectively expressing the low warping effect and the thinning effect, it is preferable to use a polyamideimide resin or a thermosetting polyimide resin as a curing agent for epoxy resin.

  The content of the curing agent for epoxy resin in the thermosetting resin composition may be appropriately determined according to the kind of curing agent for epoxy resin and epoxy resin, but the effect of reducing warpage and thinning of the semiconductor device can be achieved. From the viewpoint of expressing it more effectively, it is preferably 5 to 50 parts by mass, more preferably 10 to 40 parts by mass with respect to 100 parts by mass of the resin component excluding the inorganic filler.

  A conventionally well-known hardening accelerator can be used as a hardening accelerator combined with an epoxy resin. Specifically, an imidazole compound or an epoxy adduct or a microencapsulated product thereof; a heterocyclic compound such as DBU (1,8-diazabicyclo (4.5.0) undecene-7) or a derivative thereof; a tertiary amine compound; Organic phosphine compounds such as triphenylphosphine; onium salt compounds such as tetraphenylphosphonium salts and tetraphenylborate salts. A hardening accelerator can be used individually or in combination of 2 or more types.

{Phenolic resin}
As a phenol resin, the phenol resin which has a 2 or more phenolic hydroxyl group in 1 molecule is mentioned, for example. Although it does not restrict | limit especially as a phenol resin, For example, a compound which has two phenolic hydroxyl groups in 1 molecule, such as resorcin, catechol, bisphenol A, bisphenol F, and substituted or unsubstituted biphenol, an aralkyl type phenol resin, Cyclopentadiene type phenol resin, triphenylmethane type phenol resin, novolak type phenol resin, copolymerization type phenol resin of benzaldehyde type phenol and aralkyl type phenol, paraxylylene and / or metaxylylene modified phenol resin, melamine modified phenol resin, terpene modified phenol Resin, dicyclopentadiene type naphthol resin, cyclopentadiene modified phenolic resin, polycyclic aromatic ring modified phenolic resin, biphenyl type phenolic resin, and Phenol resins obtained by copolymerization of two or more of the like. A phenol resin can be used individually or in combination of 2 or more types.

  The phenol resin may be used in combination with a conventionally known phenol resin curing agent, or may be used as an epoxy resin curing agent.

{Cyanate resin}
Examples of the cyanate resin include compounds having two or more isocyanate groups in one molecule. Although it does not specifically limit as cyanate resin, For example, bis (4-cyanate phenyl) methane, bis (3-methyl-4- cyanate phenyl) methane, bis (3-ethyl-4- cyanate phenyl) methane, bis (3 , 5-dimethyl-4-cyanatephenyl) methane, 1,1-bis (4-cyanatephenyl) ethane, 2,2-bis (4-cyanatephenyl) propane, 2,2-bis (4-cyanatephenyl)- Examples include 1,1,1,3,3,3-hexafluoropropane, di (4-cyanatephenyl) ether, di (4-cyanatephenyl) thioether, 4,4-dicyanate-diphenyl, and the like. Cyanate resin can be used individually or in combination of 2 or more types.

{Polyamideimide resin}
Polyamideimide resin is a resin having an amide bond and an imide bond in the molecular skeleton, and is obtained, for example, by reacting a compound having both a carboxyl group and a carboxylic acid anhydride in one molecule with a diisocyanate compound. And those obtained by reacting a dicarboxylic acid compound having an imide group with a diisocyanate compound.

  The dicarboxylic acid compound having an imide group can be obtained, for example, by reacting a diamine compound with a tricarboxylic acid compound such as trimellitic anhydride. As a diamine compound used for the production of a dicarboxylic acid compound having an imide group, for example, (4,4′-diamino) dicyclohexylmethane is preferably mentioned. From the viewpoint of adjusting the physical properties of the cured product, 3,3′-dihydroxy A diamine compound having a phenolic hydroxyl group such as -4,4'-diaminobiphenyl may be used.

  As the diisocyanate compound, for example, 4,4'-diphenylmethane diisocyanate is preferably exemplified.

  As the polyamide-imide resin, for example, “Vilomax HR11NN”, “Vilomax HR12N2”, “Vilomax HR16NN” manufactured by Toyobo Co., Ltd. are commercially available.

{Thermosetting polyimide resin}
The thermosetting polyimide resin preferably contains a bismaleimide compound having at least two unsaturated N-substituted maleimide groups in the molecular structure. Specifically, for example, N, N′-ethylene bismaleimide, N, N′-hexamethylene bismaleimide, N, N ′-(1,3-phenylene) bismaleimide, N, N ′-[1,3 -(2-methylphenylene)] bismaleimide, N, N '-[1,3- (4-methylphenylene)] bismaleimide, N, N'-(1,4-phenylene) bismaleimide, bis (4- Maleimidophenyl) methane, bis (3-methyl-4-maleimidophenyl) methane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethane bismaleimide, bis (4-maleimidophenyl) ether, bis (4 -Maleimidophenyl) sulfone, bis (4-maleimidophenyl) sulfide, bis (4-maleimidophenyl) ketone, bis (4-maleimidocyclohexyl) Tan, 1,4-bis (4-maleimidophenyl) cyclohexane, 1,4-bis (maleimidomethyl) cyclohexane, 1,4-bis (maleimidomethyl) benzene, 1,3-bis (4-maleimidophenoxy) benzene, 1,3-bis (3-maleimidophenoxy) benzene, bis [4- (3-maleimidophenoxy) phenyl] methane, bis [4- (4-maleimidophenoxy) phenyl] methane, 1,1-bis [4- ( 3-maleimidophenoxy) phenyl] ethane, 1,1-bis [4- (4-maleimidophenoxy) phenyl] ethane, 1,2-bis [4- (3-maleimidophenoxy) phenyl] ethane, 1,2-bis [4- (4-Maleimidophenoxy) phenyl] ethane, 2,2-bis [4- (3-maleimidophenoxy) Enyl] propane, 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane, 2,2-bis [4- (3-maleimidophenoxy) phenyl] butane, 2,2-bis [4- (4 -Maleimidophenoxy) phenyl] butane, 2,2-bis [4- (3-maleimidophenoxy) phenyl] -1,1,1,3,3,3-hexafluoropropane, 2,2-bis [4- ( 4-maleimidophenoxy) phenyl] -1,1,1,3,3,3-hexafluoropropane, 4,4-bis (3-maleimidophenoxy) biphenyl, 4,4-bis (4-maleimidophenoxy) biphenyl, Bis [4- (3-maleimidophenoxy) phenyl] ketone, bis [4- (4-maleimidophenoxy) phenyl] ketone, 2,2′-bis (4-male Dophenyl) disulfide, bis (4-maleimidophenyl) disulfide, bis [4- (3-maleimidophenoxy) phenyl] sulfide, bis [4- (4-maleimidophenoxy) phenyl] sulfide, bis [4- (3-maleimidophenoxy) ) Phenyl] sulfoxide, bis [4- (4-maleimidophenoxy) phenyl] sulfoxide, bis [4- (3-maleimidophenoxy) phenyl] sulfone, bis [4- (4-maleimidophenoxy) phenyl] sulfone, bis [4 -(3-maleimidophenoxy) phenyl] ether, bis [4- (4-maleimidophenoxy) phenyl] ether, 1,4-bis [4- (4-maleimidophenoxy) -α, α-dimethylbenzyl] benzene, 1 , 3-Bis [4- (4-maleimido Noxy) -α, α-dimethylbenzyl] benzene, 1,4-bis [4- (3-maleimidophenoxy) -α, α-dimethylbenzyl] benzene, 1,3-bis [4- (3-maleimidophenoxy) -Α, α-dimethylbenzyl] benzene, 1,4-bis [4- (4-maleimidophenoxy) -3,5-dimethyl-α, α-dimethylbenzyl] benzene, 1,3-bis [4- (4 -Maleimidophenoxy) -3,5-dimethyl-α, α-dimethylbenzyl] benzene, 1,4-bis [4- (3-maleimidophenoxy) -3,5-dimethyl-α, α-dimethylbenzyl] benzene, Examples include 1,3-bis [4- (3-maleimidophenoxy) -3,5-dimethyl-α, α-dimethylbenzyl] benzene, polyphenylmethanemaleimide and the like. A maleimide compound can be used individually or in combination of 2 or more types.

  As the polymerization catalyst for the maleimide compound, known polymerization catalysts for bismaleimide resins can be used. For example, imidazoles, tertiary amines, quaternary ammonium salts, boron trifluoride amine complexes, organo Examples thereof include ion catalysts such as phosphine and organophosphonium salts; organic peroxides such as hydroperoxides; radical polymerization initiators such as azo compounds such as azoisobutyronitrile.

  The addition amount of the polymerization catalyst may be appropriately determined according to the purpose, but from the viewpoint of excellent stability of the maleimide resin composition, preferably 0.1 to 3.0 parts by mass with respect to 100 parts by mass of the resin component. It is.

  A thermosetting polyimide resin is also preferably used as a curing agent for epoxy resins. As a thermosetting polyimide resin suitably used as a curing agent for an epoxy resin, a reaction product of the maleimide compound and a diamine compound, preferably a maleimide compound, a diamine compound, and an amine compound having an acidic substituent. It is a reactant.

  Examples of the diamine compound used in the production of the reaction product include m-phenylenediamine, p-phenylenediamine, 1,4-bis (4-aminophenoxy) benzene, and 4,4′-diamino which are aromatic amines. Diphenylmethane, 3,3′-dimethyl-4,4′-diaminodiphenylmethane, 3,3′-diethyl-4,4′-diaminodiphenylmethane, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 4,4′-diaminobenzophenone, 4,4′-diaminodiphenyl ether, 3,3′-diaminodiphenylsulfone, 4,4′-diaminodiphenylsulfone, bis [4- (4-aminophenoxy) phenyl] sulfone, benzidine, 4,4'-bis (4-aminophenoxy) biphenyl, 4,4'-diamino Phenyl sulfide, benzoguanamine 4,4'-diamino-3,3'-biphenyl diol and guanamine compounds are preferably exemplified.

  Moreover, as an amine compound which has an acidic substituent used for manufacture of the said reaction material, m-aminophenol, p-aminophenol, o-aminophenol, p-aminobenzoic acid, m-aminobenzoic acid, o Preferred examples include -aminobenzoic acid, o-aminobenzenesulfonic acid, m-aminobenzenesulfonic acid, p-aminobenzenesulfonic acid, 3,5-dihydroxyaniline, 3,5-dicarboxyaniline and the like.

[Inorganic filler]
As the inorganic filler, conventionally known inorganic fillers can be used, for example, barium sulfate, barium titanate, amorphous silica, crystalline silica, fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, Particles such as aluminum oxide, aluminum hydroxide, silicon nitride, and aluminum nitride, and metal particles (metal powder, etc.) such as copper, tin, zinc, nickel, silver, palladium, aluminum, iron, cobalt, gold, and platinum Is mentioned. An inorganic filler can be used individually or in combination of 2 or more types.

  In the thermosetting resin composition of the present embodiment, the maximum particle size of the inorganic filler is preferably 20 μm or less, more preferably 10 μm or less, further preferably 5 μm or less, and particularly preferably 1 μm or less.

  The average particle size of the inorganic filler is preferably 5 μm or less, more preferably 3 μm or less, still more preferably 1 μm or less, particularly preferably 300 nm or less, and most preferably 100 nm or less.

  By setting the maximum particle size and the average particle size of the inorganic filler within the above ranges, the surface after the desmear treatment can be smoothed.

  The maximum particle size and average particle size of the inorganic filler are preferably smaller, but from the viewpoint of productivity and availability, the maximum particle size is preferably 50 nm or more, more preferably 100 nm or more, and the average particle size is , Preferably 2 nm or more, more preferably 10 nm or more.

  In addition, the maximum particle size and average particle size of the inorganic filler here are the dynamic light scattering nanotrack particle size distribution meter “UPA-EX150” (manufactured by Nikkiso Co., Ltd.) or the laser diffraction scattering type microtrack particle size distribution meter “ The value measured using "MT-3100" (made by Nikkiso Co., Ltd.) is meant.

  The content of the inorganic filler in the thermosetting resin composition is preferably 0 to 90 with respect to 100 parts by mass of the resin component from the viewpoint of more effectively expressing the effect of reducing warpage and thickness of the semiconductor device. It is 10 mass parts, More preferably, it is 10-70 mass parts, More preferably, it is 20-40 mass parts.

  When silica is used as the inorganic filler, it is preferable to use silica surface-treated with a silane coupling agent from the viewpoint of dispersing in the resin component without agglomeration with the primary particle size.

  As the silane coupling agent, generally available ones can be used, for example, alkyl silane, alkoxy silane, vinyl silane, epoxy silane, amino silane, acrylic silane, methacryl silane, mercapto silane, sulfide silane, isocyanate silane, Sulfur silane, styryl silane, alkylchlorosilane, and the like can be used.

  Specific compound names include methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltriethoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, n-propyltrimethoxysilane, diisopropyldimethoxysilane, isobutyltrimethoxy. Silane, diisobutyldimethoxysilane, isobutyltriethoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, cyclohexylmethyldimethoxysilane, n-octyltriethoxysilane, n-dodecylmethoxysilane, phenyltrimethoxysilane, diphenyldimethoxy Silane, triphenylsilanol, methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, n-octyldi Tylchlorosilane, tetraethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropylmethyldimethoxysilane , 3-phenylaminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldiethoxysilane Bis (3- (triethoxysilyl) propyl) disulfide, bis (3- (triethoxysilyl) propyl) tetrasulfide, vinyltriacetoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, Lutriisopropoxysilane, allyltrimethoxysilane, diallyldimethylsilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3 -Mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3-aminopropyltriethoxysilane, aminosilane and the like. A silane coupling agent can be used individually or in combination of 2 or more types.

[Method for producing thermosetting resin composition]
Although the manufacturing method of the thermosetting resin composition of this embodiment is not specifically limited, For example, it can manufacture by mixing the said resin component, an inorganic filler, etc. using a well-known stirrer, a mixer, etc. it can.

  The thermosetting resin composition is preferably obtained as a liquid thermosetting resin composition or a thermosetting resin composition solution (hereinafter also referred to as “resin varnish”) from the viewpoint of subsequent coating or the like. As a method for obtaining the resin varnish, for example, each component is dissolved or dispersed in a solvent with a known stirrer or the like, or a thermosetting resin composition obtained by melt-mixing each component in advance is used as a solvent. Examples include a method of dissolving or dispersing. The solvent is not particularly limited as long as it can dissolve the resin component and disperse the inorganic filler, and examples thereof include dimethylacetamide and N-methyl-2-pyrrolidone.

<Method for Manufacturing Member for Manufacturing Semiconductor Device>
A method for manufacturing a member for manufacturing a semiconductor device of this embodiment will be described with reference to FIG. First, as shown in FIG. 4A, a silicon wafer 112 is prepared. The silicon wafer 112 has an active surface 112a and a passive surface 112b opposite to the active surface 112a. The thickness T1 of the silicon element obtained by dividing the silicon wafer 112 and the silicon wafer 112 into pieces is, for example, 20 to 100 μm.

  Next, as shown in FIG. 4B, a thermosetting resin composition layer (thermosetting resin composition layer (a)) 114 is formed on the passive surface 112b of the silicon wafer 112 to produce a semiconductor device. A member 110 is obtained.

  Next, as shown in FIG. 4C, by separating the semiconductor device manufacturing member 110 (the silicon wafer 112 on which the thermosetting resin composition layer 114 is formed) into individual pieces, the active surface 122a and the active surface 122a are activated. A semiconductor element 122 having a passive surface 122b opposite to the surface 122a, and a thermosetting resin composition layer 124 (thermosetting resin composition layer (a)) in contact with the passive surface 122b of the semiconductor element 122. A member for manufacturing a semiconductor device 120a is obtained.

The semiconductor device manufacturing member 110 can be manufactured by, for example, the following step (i) or step (ii).
(I) A method of applying a liquid thermosetting resin composition or resin varnish on the passive surface 112b of the silicon wafer 112.
(Ii) A method in which a thermosetting resin film obtained by applying and drying a thermosetting resin composition on a support is bonded onto the passive surface 112b of the silicon wafer 112.

(Process (i))
Step (i) is a method of applying a liquid thermosetting resin composition or resin varnish onto the passive surface 112b of the silicon wafer 112. Examples of the coating method include coating by a known coater and coating by a printing method. The method of the coater is not particularly limited, and a die, comma, dip, spin, or the like can be used.

  The drying conditions after applying the liquid thermosetting resin composition or resin varnish are not particularly limited, but from the viewpoint of removing the solvent while maintaining the thermosetting resin composition in an uncured or semi-cured state, The drying temperature is preferably 50 to 150 ° C., and the drying time is preferably 1 to 30 minutes. As the dryer, a hot plate, a drying furnace, or the like can be used.

(Step (ii))
Step (ii) is a method in which a thermosetting resin film obtained by applying and drying a thermosetting resin composition on a support is stuck on the passive surface 112b of the silicon wafer 112.

[Thermosetting resin film]
The thermosetting resin film of the present embodiment is a thermosetting resin film used for manufacturing a member for manufacturing a semiconductor device, and is suitably used, for example, in the step (ii). The thermosetting resin film of this embodiment that is suitably used in the step (ii) will be described. The thermosetting resin film of the present embodiment includes a support α and a thermosetting resin composition layer laminated on the support α, and the thermosetting resin composition layer of the present embodiment is thermosetting. A resin composition is included. The thermosetting resin film of this embodiment can be manufactured by apply | coating and drying a thermosetting resin composition on the support body (alpha), for example.

  The support α is not particularly limited, and a known film such as a polyethylene terephthalate film (hereinafter also referred to as “PET film”) can be used. The thickness of the support α may be appropriately selected according to the material used, but is preferably 1 to 50 μm, more preferably 10 to 30 μm.

  The thickness of the thermosetting resin film is preferably 30 to 500 μm, more preferably 50 to 450 μm, and still more preferably 75 to 400 μm.

  The thermosetting resin film can be produced by applying the liquid thermosetting resin composition or the resin varnish on the support α using a known coater or the like, and then drying it with a dryer or the like. it can. Examples of the application method include the same method as in step (i).

  Although it does not specifically limit as drying conditions, From a viewpoint of removing a solvent, maintaining a thermosetting resin composition in the uncured or semi-hardened state, as drying temperature, Preferably it is 50-150 degreeC, More preferably The drying time is preferably 1 to 60 minutes, more preferably 5 to 20 minutes.

  Moreover, you may stick protective films, such as a polyethylene film, to a thermosetting resin film from a viewpoint of suppressing adhesion of dust etc. to a thermosetting resin composition layer (a).

  By sticking the thermosetting resin film thus obtained on a passive surface of a silicon wafer using a known vacuum laminator, roll laminator, press machine, etc., for manufacturing a semiconductor device of this embodiment A member can be manufactured.

  If the temperature, time and pressure of the laminator in the bonding process with the silicon wafer are appropriately selected on the passive surface of the silicon wafer, the thermosetting resin composition is uniform and air entrapment does not occur. Good. The temperature of the laminator is preferably 30 to 90 ° C., more preferably 40 to 80 ° C., because it is necessary to flow and seal the thermosetting resin composition later on the passive surface of the semiconductor element. From the same viewpoint, the laminator time is preferably 1 to 60 seconds, and more preferably 2 to 20 seconds. From the same viewpoint, the laminator pressure is preferably 0.05 to 1.0 MPa, more preferably 0.2 to 0.6 MPa.

<Other aspects of semiconductor device manufacturing member>
The member for manufacturing a semiconductor device of the present embodiment may be an aspect including at least a support, a temporary fixing layer, a semiconductor element, and a thermosetting resin composition layer in this order in the stacking direction. For example, a semiconductor device manufacturing member 120b shown in FIG. 5E described later includes a support 126, a temporary fixing layer 128, a semiconductor element 122, and a thermosetting resin composition layer 124 in the stacking direction. Prepare in this order.

(Support)
The support (such as the support 126 in FIG. 5 (d)) is not particularly limited, but may be a SUS plate, a silicon wafer, a glass cloth-filled core base material in which a resin is impregnated with a glass cloth or the like that has a small dimensional change due to heat. preferable. Moreover, the thickness of a support body is although it does not specifically limit, Preferably it is 0.4-3.0 mm, More preferably, it is 0.5-3.0 mm. When the thickness of the support is 0.4 mm or more, deformation can be suppressed, and when it is 3.0 mm or less, the mass (for example, mass when using a SUS plate) does not become too large and the handling is good. become.

(Temporary fixed layer)
As the temporary fixing layer (such as the temporary fixing layer 128 in FIG. 5D), a temporary fixing film or the like generally used for manufacturing a semiconductor device can be used. Examples of the temporary fixing film include an ultraviolet release film whose adhesive strength is reduced by performing ultraviolet irradiation, a fixed film which is dissolved by a specific chemical solution, and a thermal release sheet whose adhesive strength is reduced by heat treatment. From the viewpoint of safety, safety and environmental protection, a heat release sheet is preferable. As the heat release sheet, for example, “Riva Alpha Series” (manufactured by Nitto Denko Corporation) is commercially available.

<Method for Manufacturing Semiconductor Device>
Hereinafter, as a typical method for using the semiconductor device manufacturing member of the present embodiment, a method of manufacturing the semiconductor device of the present embodiment will be described with reference to FIGS.

  First, as shown in FIG. 5D, a support 126 and a temporary fixing layer 128 are prepared, and the temporary fixing layer 128 is disposed on the support 126. Next, as shown in FIG. 5E, the active surface 122a of the semiconductor element 122 is obtained on the temporary fixing layer 128 through FIGS. 4A to 4C so that the active surface 122a contacts the temporary fixing layer 128. The plurality of semiconductor device manufacturing members 120a are adhered at predetermined intervals, so that the semiconductor elements 122 of the semiconductor device manufacturing member 120a are rearranged to obtain the semiconductor device manufacturing member 120b. Next, as shown in FIG. 5F, the entire semiconductor element 122 is sealed with a thermosetting resin composition layer 124 disposed on the passive surface 122b of the semiconductor element 122, and the entire semiconductor element 122 is sealed. After forming the thermosetting resin composition layer (b) to cover, the insulating layer formed by performing the hardening process of the said thermosetting resin composition layer (b), and hardening the thermosetting resin composition layer (b) 130 (insulating layer (A)) is formed. Next, as shown in FIG. 5G, the support 126 and the temporary fixing layer 128 are peeled off from the cured laminate. Next, as illustrated in FIG. 5H, a photosensitive resin composition layer 132 is formed on the active surface 122 a of the semiconductor element 122 and the insulating layer 130 in a state where the temporary fixing layer 128 is removed.

  Thereafter, as shown in FIG. 6 (i), the photosensitive resin composition layer 132 is exposed and developed, and from the surface of the photosensitive resin composition layer 132 to the active surface 122 a of the semiconductor element 122 in the stacking direction. An insulating layer (insulating layer (B)) is formed by forming the opening 134 to reach the photosensitive resin composition layer 132 and then performing post-curing of the photosensitive resin composition layer 132 to cure the photosensitive resin composition layer 132. ) 132a is formed. Next, as illustrated in FIG. 6J, a seed layer 136 is formed on the surface of the insulating layer 132 a and the inner wall of the opening 134. Next, as shown in FIG. 6K, a resist pattern 138 is formed on the seed layer 136 using a photosensitive resin composition. Next, as shown in FIG. 6L, a wiring pattern 140 is formed on the portion of the seed layer 136 exposed from the resist pattern 138 by plating (electroplating (electroplating) or the like).

  Thereafter, as shown in FIGS. 7 (m) and 7 (n), a part of the seed layer 136 (a part of the seed layer 136 exposed from the wiring pattern 140) and the resist pattern 138 are removed. Next, as shown in FIG. 7O, a photosensitive resin composition layer 142 is formed so as to cover the insulating layer 132 a and the wiring pattern 140. Next, as shown in FIG. 7P, an insulating layer (insulating layer (C)) 142a having an opening 144 extending from the surface of the insulating layer 142a to the wiring pattern 140 in the stacking direction is replaced with the insulating layer 132a and the wiring pattern 140. Form on top.

  Thereafter, as shown in FIG. 8 (q), the exposed portion of the wiring pattern 140 from the opening 144 is plated to form a plating layer 146. Next, as illustrated in FIG. 8R, external connection terminals 148 are formed on the plating layer 146 in the openings 144. Next, as illustrated in FIG. 8S, the semiconductor device 150 is obtained by dicing into pieces.

  Note that the semiconductor device of this embodiment may be a stacked body before dicing in FIG. In the present embodiment, the semiconductor device may be manufactured by performing subsequent steps such as sealing of the semiconductor element 122 on one semiconductor device manufacturing member 120a disposed on the temporary fixing layer 128.

The semiconductor device manufacturing method of the present embodiment includes, for example, the following steps (I) to (XII).
(I) The process of rearranging the semiconductor element of the member for manufacturing a semiconductor device so that the active surface of the semiconductor element and the temporary fixing layer are in contact with each other. (II) The thermosetting resin composition layer of the member for manufacturing the semiconductor device. (A) Step of forming a thermosetting resin composition layer (b) that covers the entire semiconductor element by sealing with (a) (III) The thermosetting resin composition layer (b) is cured to form an insulating layer (A (IV) A step of forming a photosensitive resin composition layer on the active surface of the semiconductor element in a state where the temporary fixing layer is removed. (V) An exposure process and a development process are performed on the photosensitive resin composition layer. (VI) Step of forming the insulating layer (B) by curing the photosensitive resin composition layer by forming the opening to the active surface of the semiconductor element in the photosensitive resin composition layer Step of forming seed layer on layer (B) (VIII) Seed layer Step of forming a resist for circuit formation on top and forming a resist pattern for rewiring by performing exposure processing and development processing (IX) After forming a wiring pattern on a portion of the seed layer exposed from the resist pattern, the resist Step of removing pattern (X) Step of removing a portion exposed from the wiring pattern in the seed layer (XI) Step of forming an insulating layer (C) having an opening reaching the wiring pattern on the wiring pattern (XII) Insulation Forming an external connection terminal in the opening of the layer (C)

  In the method for manufacturing a semiconductor device using the semiconductor device manufacturing member of the present embodiment, since the thermosetting resin composition layer is disposed in advance on the passive surface of the semiconductor element, the thermosetting property on the passive surface of the semiconductor element. Even when the resin composition layer is thin, an insulating layer capable of sufficiently sealing the gap between the semiconductor elements and the semiconductor elements can be formed. Thus, it is considered that a thin semiconductor device can be formed efficiently. The method for manufacturing a semiconductor device according to this embodiment is particularly suitable for a wafer level semiconductor device that is becoming thinner.

  The manufacturing method of the semiconductor device of this embodiment includes (S1) a step of forming a thermosetting resin composition layer (a) on a passive surface of a silicon wafer, and (S2) a thermosetting resin composition layer (a The step of obtaining a semiconductor device manufacturing member by dividing the silicon wafer on which the) is formed may be provided. Moreover, the manufacturing method of the semiconductor device of this embodiment may be provided with the process of peeling the temporary fixing layer from a semiconductor element (S3) before process (IV). The method for manufacturing a semiconductor device according to the present embodiment may include, after step (XII), (S4) a step of separating the stacked body obtained in step (XII).

  Hereinafter, an example of each step in the method for manufacturing the semiconductor device illustrated in FIG. 8S will be further described with reference to FIGS.

(Process (S1))
Step (S1) is a step of forming a thermosetting resin composition layer (thermosetting resin composition layer (a)) 114 on the passive surface 112b of the silicon wafer 112, as shown in FIG. 4B. is there. The thermosetting resin composition for obtaining the thermosetting resin composition layer 114 may be liquid or film-like as in the step (i) and the step (ii). When the thermosetting resin composition is in a liquid state, the thermosetting resin composition layer 114 can be formed by applying a liquid thermosetting resin composition using a printing machine. When the product is in the form of a film, it can be formed by attaching a film-like thermosetting resin composition using a roll laminator, a vacuum laminator or the like. The thickness of the thermosetting resin composition layer 114 is adjusted so that the desired thickness of the insulating layer 130 (FIG. 5F) is obtained.

(Process (S2))
Step (S2) is a step of obtaining a semiconductor device manufacturing member 120a by dividing the silicon wafer 112 on which the thermosetting resin composition layer 114 is formed, as shown in FIG. 4 (c). The semiconductor element 122 can be obtained by dividing into pieces using a dicer. In the semiconductor device manufacturing member 120 a, the thermosetting resin composition layer 124 covers the entire passive surface 122 b of the semiconductor element 122. At least a part of the semiconductor element 122 is exposed from the thermosetting resin composition layer 124. For example, at least a part of the side surface of the semiconductor element 122 is exposed from the thermosetting resin composition layer 124.

(Process (I))
In step (I), as shown in FIG. 5E, the semiconductor element of at least one member for manufacturing a semiconductor device (FIG. 5 (FIG. 5) is formed so that the active surface 122a of the semiconductor element 122 and the temporary fixing layer 128 come into contact with each other. e) is a step of rearranging the semiconductor elements 122) of the semiconductor device manufacturing member 120a.

(Process (II))
In step (II), as shown in FIG. 5F, the entire semiconductor element 122 is sealed with the thermosetting resin composition layer 124 of the semiconductor device manufacturing member 120a, and includes the passive surface 122b. This is a step of forming a thermosetting resin composition layer (b) (a layer to be the insulating layer 130) covering the whole 122. A commercially available compression sealing molding machine, a vacuum laminator, etc. can be used for the sealing method.

  The thickness of the thermosetting resin composition layer (b) and the insulating layer 130 in the next step is preferably 30 to 150 μm, more preferably 50 to 120 μm, and still more preferably 75 to 100 μm. By setting the thickness to 30 μm or more, the surfaces of the thermosetting resin composition layer (b) and the insulating layer 130 can be smoothly sealed, and by setting the thickness to 150 μm or less, it is suitable for a thin semiconductor device. It is.

(Step (III))
Step (III) is a step of forming the insulating layer 130 formed by curing the thermosetting resin composition layer (b) and curing the thermosetting resin composition layer (b). The thickness of the portion on the semiconductor element 122 in the insulating layer 130 (T3 in FIG. 5F) is preferably 10 to 150 μm, more preferably 15 to 120 μm, and still more preferably 20 to 100 μm. The thermosetting conditions may be appropriately determined according to the type of resin to be used, but from the viewpoint of sufficiently proceeding the curing reaction and from the viewpoint of improving productivity, the curing temperature is preferably 80 to 230 ° C. Preferably it is 100-200 degreeC, More preferably, it is 140-200 degreeC, Preferably hardening time is 5-180 minutes, More preferably, it is 10-120 minutes, More preferably, it is 30-80 minutes.
→ I added the range of T3.

(Process (S3))
The step (S3) is a step of peeling the temporary fixing layer 128 as shown in FIG. When the support 126 is provided, the support 126 may be peeled before the temporary fixing layer 128 is peeled off or simultaneously with the peeling of the temporary fixing layer 128. In addition, you may perform a process (S3) before the said process (III).

  The peeling method is not particularly limited, but when a heat peeling sheet is used as the temporary fixing layer 128, for example, it can be peeled off by placing on a hot plate set to a predetermined temperature and heating. What is necessary is just to determine the temperature to heat suitably according to the thermal peeling sheet to be used.

(Process (VI))
Step (VI) is a step of forming a photosensitive resin composition layer 132 on the active surface 122a of the semiconductor element 122 in a state where the temporary fixing layer 128 is removed, as shown in FIG. As the photosensitive resin composition of the photosensitive resin composition layer 132, a known photosensitive resin composition can be used, which may be liquid or film-like. The photosensitive resin composition layer 132 can be formed by applying a liquid photosensitive resin composition using a printing machine or a spin coater when the photosensitive resin composition is in a liquid state. Can be formed by attaching a film-like photosensitive resin composition using a roll laminator, a vacuum laminator or the like.

(Process (V))
In step (V), as shown in FIG. 6 (i), the photosensitive resin composition layer 132 is subjected to exposure treatment and development treatment, and the semiconductor element 122 is formed from the surface of the photosensitive resin composition layer 132 in the stacking direction. In this process, an opening 134 reaching the active surface 122a is formed in the photosensitive resin composition layer 132. The exposure process is a process of exposing a predetermined portion of the circuit forming resist by irradiating the formed circuit forming resist with an actinic ray through a mask pattern and photocuring the circuit forming resist in the exposed portion. is there. Subsequent to the exposure process, a development process for removing the resist for circuit formation other than the exposed part is performed, whereby the photosensitive resin composition layer 132 for rewiring can be formed.

  As an actinic ray light source in the exposure process, a known light source can be used, for example, a carbon arc lamp, a mercury vapor arc lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a xenon lamp, or the like that effectively emits ultraviolet rays. It can be used suitably. Further, direct drawing direct laser exposure may be used.

Although an exposure amount changes with apparatuses to be used, the composition of the photosensitive resin composition, etc., Preferably it is 10-600 mJ / cm < ² >, More preferably, it is 20-400 mJ / cm < ² >. When the exposure amount is 10 mJ / cm ² or more, the progress of photocuring is sufficient and stable openings can be formed, and when it is 600 mJ / cm ² or less, the photocuring is prevented from proceeding excessively. The opening shape of the opening in the photosensitive resin composition layer can be obtained stably.

  As the developer used for the development treatment, for example, an alkaline developer such as a dilute solution of tetramethylammonium (2.38% by mass aqueous solution) at 20 to 50 ° C. is used. The developing method is not particularly limited, and can be performed by a known method such as paddle, spraying, rocking immersion, brushing, and scraping using the developer.

(Process (VI))
Step (VI) is a step in which the photosensitive resin composition layer 132 is cured (post-cured) to form the insulating layer 132a formed by curing the photosensitive resin composition layer 132. The post-curing conditions may be appropriately determined according to the type of resin used, but from the viewpoint of sufficiently proceeding the curing reaction, and from the viewpoint of improving productivity, the curing temperature is not particularly limited, Preferably it is 170-230 degreeC, More preferably, it is 180-220 degreeC, More preferably, it is 190-210 degreeC, Although it does not specifically limit about hardening time, Preferably it is 60-300 minutes, More preferably, it is 120-240. Minutes, more preferably 140 to 200 minutes.

(Process (VII))
Step (VII) is a step of forming a seed layer 136 on the surface of the insulating layer 132a and the inner wall of the opening 134 as shown in FIG. 6 (j). The seed layer 136 is a conductive thin film that serves as a base layer when the wiring pattern (copper wiring pattern or the like) 140 (FIG. 6 (l)) is formed by a plating method (electroplating method or the like). It can be suitably formed by sputtering or the like. When the sputtering method is used, various formation layers can be selected, such as depositing Ti before depositing metal (copper or the like). The thickness of the seed layer 136 is not particularly limited, but is usually 0.1 to 2.0 μm.

(Process (VIII))
Step (VIII) is a step of forming a resist for circuit formation 138 by forming a resist for circuit formation on the seed layer 136 and performing an exposure process and a development process as shown in FIG. .

  As the resist for forming a circuit, a known resist material used as a resist for forming a circuit can be used, and it may be either liquid or film. The resist for circuit formation can be formed by applying a liquid resist material using a printing machine when the resist material is in a liquid form. If the resist material is in a film form, a roll laminator, a vacuum laminator, or the like is used. Then, a film-like resist material can be attached.

  The exposure process is a process of exposing a predetermined portion of the circuit forming resist by irradiating the formed circuit forming resist with an actinic ray through a mask pattern and photocuring the circuit forming resist in the exposed portion. is there. Subsequent to the exposure process, a resist pattern 138 for rewiring can be formed by performing a development process for removing the resist for circuit formation other than the exposed part.

  As an actinic ray light source in the exposure process, a known light source can be used, for example, a carbon arc lamp, a mercury vapor arc lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a xenon lamp, or the like that effectively emits ultraviolet rays. It can be used suitably. Further, direct drawing direct laser exposure may be used.

The exposure dose varies depending on the apparatus used, the composition of the resist for circuit formation, and the like, but is preferably 10 to 600 mJ / cm ² , more preferably 20 to 400 mJ / cm ² . When the exposure amount is 10 mJ / cm ² or more, the progress of photocuring is sufficient and a resist pattern can be stably formed, and when it is 600 mJ / cm ² or less, the photocuring is prevented from proceeding excessively. The opening shape of the opening in the circuit forming resist can be obtained stably.

  As the developer used for the development process, for example, an alkali developer such as a dilute solution (1 to 5% by mass aqueous solution) of sodium carbonate at 20 to 50 ° C is used. The development method is not particularly limited, and can be performed by a known method such as spraying, rocking immersion, brushing, and scraping using the developer.

(Process (IX))
In step (IX), as shown in FIGS. 6 (l) and 7 (m), a wiring pattern 140 is formed on the exposed portion of the seed layer 136 from the resist pattern 138 by plating (electroplating, etc.). Thereafter, the resist pattern 138 is removed by a peeling process. The electroplating may be performed by a conventionally known method, and the thickness of the obtained wiring pattern 140 is preferably 1 to 20 μm.

(Process (X))
Step (X) is a step of removing a portion of the seed layer 136 exposed from the wiring pattern 140 as shown in FIG. The seed layer 136 can be removed using a known etching solution.

(Process (XI))
In step (XI), as shown in FIGS. 7O and 7P, an insulating layer 142a having an opening 144 extending from the surface of the insulating layer 142a to the wiring pattern 140 in the stacking direction is formed on the wiring pattern 140. It is the process of forming.

  For example, in the step (XI), as shown in FIG. 7O, after the photosensitive resin composition layer 142 is formed on the insulating layer 132a and the wiring pattern 140, the photosensitive resin composition layer 142 is subjected to exposure treatment and A development process is performed to form an opening 144 reaching the wiring pattern 140 in the photosensitive resin composition layer 142, and further, the photosensitive resin composition layer 142 is cured (post-cured) to obtain a photosensitive resin composition. In this step, the insulating layer 142a is formed by curing the layer 142.

  The insulating layer 142a can be suitably formed using the photosensitive resin composition used for forming the insulating layer 132a. A suitable method for forming the insulating layer 142a is similar to the method for forming the insulating layer 132a. The method for forming the opening 144 in the insulating layer 142a is the same as the method for forming the opening 134 in the step (V).

(Process (XII))
Step (XII) is a step of forming the external connection terminal 148 in the opening 144 of the insulating layer 142a as shown in FIGS. 8 (q) and 8 (r).

  In forming the external connection terminal 148, first, as shown in FIG. 8 (q), a plating layer (for example, an electroless nickel plating layer and / or an electroless nickel plating layer) is exposed to the wiring pattern 140 exposed from the opening 144 provided in the insulating layer 142a. Or a gold plating layer) 146 is preferably formed. The thickness of the nickel plating is preferably 1 to 10 μm, and the thickness of the gold plating is preferably 0.01 to 1.0 μm, more preferably 0.05 to 0.15 μm.

  Next, as shown in FIG. 8R, a conductive material as an external connection terminal 148 is formed in the opening 144 of the insulating layer 142a. The conductive material is not particularly limited, but from the viewpoint of environmental conservation, it is preferable to use a solder such as Sn—Ag or Sn—Ag—Cu. Further, a Cu post may be formed using a circuit forming resist.

(Process (S4))
In step (S4), as shown in FIG. 8S, the semiconductor device 150 can be obtained by dicing into pieces by dicing using a dicer.

  The preferred embodiments of the semiconductor device manufacturing member of the present invention and the semiconductor device manufacturing method using the same have been described above, but the present invention is not necessarily limited to the above-described embodiments, and the gist thereof is described. Changes may be made as appropriate without departing from.

  EXAMPLES Hereinafter, although this invention is demonstrated concretely based on an Example, this invention is not limited to the following Example.

<Preparation of support and temporary fixing layer>
First, as shown in FIG. 5D, a SUS plate having a diameter of 220 mm and a thickness of 1.5 mm was prepared as the support 126. Next, a temporary fixing film (manufactured by Nitto Denko Corporation, trade name: Riva Alpha No. 3195V) was attached to one side of the SUS plate using a laminator, and a temporary fixing layer 128 was formed on the SUS plate. In addition, about the film for temporary fixing which protruded from the SUS board, it cut away with the cutter knife.

<Manufacture of thermosetting resin composition>
[Production of Thermosetting Resin Composition A]
In producing the thermosetting resin composition A, first, a curing agent (A-1) was prepared.
In a 2 liter reaction vessel equipped with a thermometer, a stirrer, and a moisture meter with a reflux condenser, a reaction vessel with a volume of 2 liters, 26.40 g of bis (4-aminophenyl) sulfone and 2,2′-bis [4 -(4-maleimidophenoxy) phenyl] propane 484.50 g, p-aminobenzoic acid 29.10 g and dimethylacetamide 360.00 g were added and reacted at 140 ° C. for 5 hours to give a sulfone group in the molecular main chain. A solution of a curing agent (A-1) having an acidic substituent and an unsaturated N-substituted maleimide group was obtained.

  Next, 70 parts by mass of a biphenyl aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: NC-3000H), and 30 parts by mass of the curing agent (A-1) obtained as described above, A silica filler (average particle size: 50 nm) treated with vinyl silane is blended with 30 parts by mass with respect to 100 parts by mass of the resin component, and a bead mill (manufactured by Ashizawa Finetech Co., Ltd., trade name: Star Mill LMZ) is used. The solution was dispersed for 3 hours at a peripheral speed of 12 m / s to obtain a solution of the thermosetting resin composition A.

  Regarding the dispersion state of the silica filler, the dynamic light scattering nanotrack particle size distribution meter “UPA-EX150” (manufactured by Nikkiso Co., Ltd.), the laser diffraction scattering type microtrack particle size distribution meter “MT-3100” (Nikkiso ( Co., Ltd.) was used in combination, and it was confirmed that the average particle size was 50 nm and the maximum particle size was 1 μm or less.

[Production of Thermosetting Resin Composition B]
In producing the thermosetting resin composition B, first, a curing agent (A-2) was prepared.
(4,4′-diamino) dicyclohexylmethane (manufactured by Shin Nippon Rika Co., Ltd., trade name: Wandamine HM (WHM)) 52.7 g as a diamine compound, and 3,3′-dihydroxy- as a diamine having a reactive functional group 6 g of 4,4′-diaminobiphenyl, 108 g of trimellitic anhydride as a tricarboxylic anhydride, and 1281 g of N-methyl-2-pyrrolidone as an aprotic polar solvent are placed in a flask, and the temperature in the flask is set to 80 ° C. And stirred for 30 minutes. After completion of the stirring, 192 g of toluene was further added as an aromatic hydrocarbon azeotropic with water, and the temperature in the flask was raised to 160 ° C. and refluxed for 2.5 hours. After confirming that the theoretical amount of water was stored in the moisture determination receiver and that no water distilling was observed, the temperature in the flask was adjusted to 180 ° C. while removing water and toluene in the moisture determination receiver. And toluene in the reaction solution was removed. After cooling the solution in the flask to 60 ° C., hydrogenated α, ω-polybutadiene dicarboxylic acid (manufactured by Nippon Soda Co., Ltd., trade name) as a dicarboxylic acid having a long-chain hydrocarbon chain skeleton (about 50 carbon atoms). CI-1000) 309.5 g was added and stirred for 10 minutes. After completion of the stirring, 119.7 g of 4,4′-diphenylmethane diisocyanate was added as a diisocyanate, the temperature in the flask was raised to 160 ° C. and reacted for 2 hours, and a solution of a curing agent (A-2) was obtained as a polyamideimide resin. A solution was obtained.

  The weight average molecular weight (Mw) of this polyamideimide resin was measured by gel permeation chromatography and found to be 47,000. The average reactive functional group number N per polyamideimide molecule was 4.4.

  Next, 70 parts by mass of a biphenyl aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: NC-3000H), and 30 parts by mass of the hardener (A-2) obtained above, A silica filler (average particle size: 50 nm) treated with vinyl silane is blended with 30 parts by mass with respect to 100 parts by mass of the resin component, and a bead mill (manufactured by Ashizawa Finetech Co., Ltd., trade name: Star Mill LMZ) is used. Dispersion was carried out at a peripheral speed of 12 m / s for 3 hours to obtain a solution of the thermosetting resin composition B.

  The dispersion state of the silica filler in the thermosetting resin composition B was analyzed by the same method as the thermosetting resin composition A, and it was confirmed that the average particle size was 50 nm and the maximum particle size was 1 μm or less.

[Production of Thermosetting Resin Composition C]
70 parts by mass of a cresol novolac epoxy resin (manufactured by DIC Corporation, trade name: Epicron N660), 10 parts by mass of a phenoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., trade name: YP-55) and a melamine-modified phenol 20 parts by mass of novolak resin (manufactured by DIC Corporation, trade name: LA7054), 10 parts by mass of barium sulfate particles (average particle size: 300 nm) with respect to 100 parts by mass of the resin component, and a silica filler treated with vinylsilane ( 30 parts by mass with respect to 100 parts by mass of resin component (average particle size: 50 nm), and using a bead mill (manufactured by Ashizawa Finetech Co., Ltd., trade name: Star Mill LMZ) at a peripheral speed of 12 m / s Dispersing for 3 hours gave a solution of thermosetting resin composition C.

  The dispersion state of the barium sulfate particles and silica filler in the thermosetting resin composition C was confirmed by the same method as the thermosetting resin composition A, and the maximum particle size of the barium sulfate particles was 2 μm or less. It was confirmed that the maximum particle size was 1 μm or less.

<Manufacture of thermosetting resin film>
A solution of the thermosetting resin compositions A to C is dried on a PET film (trade name: G2-16, 16 μm thickness, manufactured by Teijin Limited) as a support α, and the thermosetting resin composition layer after drying. It applied uniformly so that the thickness of (a) might become thickness T (a1) shown in Table 1. Then, the thermosetting resin film was obtained by drying at 100 degreeC for about 10 minutes using a hot air convection type dryer.

  Next, a polyethylene film (manufactured by Tamapoly Co., Ltd., trade name: NF-15) is bonded as a protective film so that dust or the like does not adhere to the thermosetting resin film, and a thermosetting resin film F- with a protective film is attached. 1 to F-7 were obtained. Details of the thermosetting resin film are shown in Table 1.

<Examples 1 to 10>
(Manufacture of semiconductor device manufacturing members)
Only the protective films of the thermosetting resin films F-1 to F-7 were peeled off and placed on the passive surface of an 8-inch silicon wafer (thickness: T1). Lamination was performed using a press-type vacuum laminator (trade name: MVLP-500, manufactured by Meiki Seisakusho Co., Ltd.), and a thermosetting resin composition layer (thickness: T (a2)) was formed on the passive surface of an 8-inch silicon wafer. ) Was formed. Then, after peeling PET film which is a support body, it isolate | separates with a dicer and the semiconductor device manufacture which has a semiconductor element (thickness: T1) and a thermosetting resin composition layer (thickness: T (a2)) in this order. Members P-1 to P-7 were obtained. Details of the semiconductor device manufacturing member are shown in Table 2.

  The press-type vacuum laminator was evacuated for 20 seconds, laminated time was 30 seconds, laminated temperature was 50 ° C., laminated pressure was 0.4 MPa, and atmospheric pressure was 4 kPa or less. Moreover, the size of the separated semiconductor device manufacturing members P-1 to P-7 was set to 7.3 mm × 7.3 mm.

(Preparation of compression sealed molding)
First, as shown in FIG. 5E, each of the semiconductor device manufacturing members P-1 to P-7 having a thickness T1 + T (a2) shown in Table 2 and having a thickness T1 + T (a2) of 7.3 mm × 7.3 mm is supported by the support 126. The temporary fixing layer (temporary fixing film) 128 affixed to the semiconductor device and the active surface of the semiconductor element in the semiconductor device manufacturing member were arranged (rearranged) in a lattice shape.

  The number of semiconductor device manufacturing members was 293, and the pitch was 9.6 mm in both the vertical and horizontal directions. A die sorter (manufactured by Canon Machinery Co., Ltd., trade name: CAP3500) was used for arranging the semiconductor device manufacturing members. The load at the time of arrangement was 1 kgf per semiconductor element.

  Next, using the thermosetting resin composition layer in the semiconductor device manufacturing members P-1 to P-7, the semiconductor element is sealed so as to cover it, and heat having a thickness T (b) shown in Table 2 is used. A curable resin composition layer (b) was formed. Sealing was performed under the conditions described in Table 2 using a compression sealing device (trade name: WCM-300, manufactured by Apic Yamada Co., Ltd.). Next, post-curing was performed under the conditions shown in Table 2 to form an insulating layer (insulating layer (A)) 130 obtained by curing the thermosetting resin composition layer (b) (see FIG. 5F). . And the compression body sealing molding was produced by peeling the support body 126 and the temporary fixing layer 128 on a 200 degreeC hotplate (refer FIG.5 (g)).

(Comparative Examples 1-7)
An 8-inch silicon wafer (thickness: T1) was separated into pieces by a dicer to obtain a semiconductor element. Next, the temporary fixing layer (temporary fixing film) 128 and the active surface of the semiconductor element are arranged (rearranged) in a lattice shape so that the support (SUS plate) 126, the temporary fixing layer 128, and the semiconductor element are arranged. Semiconductor device manufacturing members Q-1 to Q-2 having this order were obtained. Details of the semiconductor device manufacturing members are shown in Table 3.

  Only the protective films of the thermosetting resin films F-1 to F-7 were peeled off and placed on the semiconductor device manufacturing members Q-1 to Q-2 shown in Table 3. Thereafter, the PET film as the support was peeled off and compression-sealed. Subsequently, post-curing was performed to produce a compression sealing molded product. The conditions shown in Table 3 were adopted as compression sealing conditions and post-curing conditions.

<Evaluation>
(Embeddability)
The compression-sealed molded product was visually observed and evaluated based on the following criteria. The evaluation results are shown in Tables 2 and 3.
○: The resin is sufficiently embedded between the semiconductor elements, and there is no unfilled portion.
X: There is an unfilled portion between the semiconductor elements.

<Manufacture of semiconductor devices>
Using the compression sealing moldings of Examples 1 to 10, a semiconductor device was manufactured as follows.

  As shown in FIG. 5H, a photosensitive resin composition layer 132 was formed on the active surface side of the semiconductor element. A spin coater (manufactured by Mikasa Co., Ltd., trade name: Opticoat MS-A200) was used for the formation. The formation conditions were a rotation speed of 1500 rpm and a rotation time of 30 seconds.

  Next, as shown in FIG. 6 (i), the photosensitive resin composition layer 132 is exposed and developed to provide an opening 134 to reach the semiconductor element, and then the photosensitive resin composition layer 132 is thermally cured. The insulating layer (insulating layer (B)) 132a formed by curing the photosensitive resin composition layer 132 was formed. Thereafter, as shown in FIG. 6J, a seed layer 136 having a thickness of 1 μm was formed on the insulating layer 132a by sputtering.

Next, a resist for circuit formation (manufactured by Hitachi Chemical Co., Ltd., trade name: Photec RY-3525) was attached onto the seed layer 136 with a roll laminator. Next, the phototool on which the pattern was formed was brought into close contact with the resist for circuit formation, and exposure was performed with an energy amount of 100 mJ / cm ² using an exposure machine (EXM1201 type, manufactured by Oak Manufacturing Co., Ltd.). Next, spray development was performed for 90 seconds with a 1 mass% sodium carbonate aqueous solution at 30 ° C. to form a resist pattern 138 for circuit formation as shown in FIG.

  Next, as shown in FIG. 6L, a copper wiring pattern 140 having a thickness of 5 μm was formed on the seed layer 136 by electroplating. Next, as shown in FIG. 7 (m), after the resist pattern 138 for circuit formation is stripped with a stripping solution, the portion exposed from the wiring pattern 140 in the seed layer 136 as shown in FIG. 7 (n). Was removed with an etching solution.

  Next, as shown in FIG. 7 (o), a photosensitive resin composition similar to the photosensitive resin composition used for forming the insulating layer 132a is used on the wiring pattern 140 and the insulating layer 132a, and a photosensitive film having a thickness of 20 μm. The conductive resin composition layer 142 was formed.

  Next, as shown in FIG. 7 (p), exposure / development processing is performed under the same conditions as for the insulating layer 132a, and an opening 144 leading to the wiring pattern 140 is provided in the photosensitive resin composition layer 142, followed by heat Curing was performed to form the insulating layer 142a.

  Thereafter, as shown in FIG. 8 (q), using a commercially available electroless nickel / gold plating solution, a plating process is performed on the wiring pattern 140 so that the nickel plating thickness is 3 μm and the gold plating thickness is 0.1 μm. Thus, a plating layer 146 was formed. Next, an Sn—Ag—Cu-based solder ball was mounted on the plating layer 146 as the external connection terminal 148 by reflow mounting (see FIG. 8R). Next, as shown in FIG. 8S, the semiconductor device 150 was obtained by dicing into a size of 9.3 mm × 9.3 mm by dicing (blade width 0.3 mm).

  The semiconductor device manufacturing member and the semiconductor device manufacturing method using the same according to the present invention can be suitably used for a wafer level semiconductor device, and can be reduced in size and thickness, such as a package-on-package rewiring process. It can be applied to all necessary semiconductor devices, component-embedded substrates, and the like.

  DESCRIPTION OF SYMBOLS 10,126 ... Support body, 12, 128 ... Temporary fixing layer, 14, 122 ... Semiconductor element, 14a, 112a, 122a ... Active surface, 16 ... Sealing material, 18, 132, 142 ... Photosensitive resin composition layer, 18a, 26, 130, 132a, 142a ... Insulating layer, 20, 136 ... Seed layer, 22, 138 ... Resist pattern, 24, 140 ... Wiring pattern, 28 ... Solder ball, 30, 150 ... Semiconductor device, 110, 120a, 120b ... Semiconductor device manufacturing member, 112 ... Silicon wafer, 112b, 122b ... Passive surface, 114, 124 ... Thermosetting resin composition layer, 134, 144 ... Opening, 146 ... Plating layer, 148 ... External connection terminal , T1, T2, T3 ... thickness.

Claims (9)

A semiconductor device manufacturing member used for rearrangement of semiconductor elements,
A semiconductor device having an active surface and a passive surface opposite to the active surface;
A member for manufacturing a semiconductor device, comprising: a thermosetting resin composition layer (a) in contact with the passive surface of the semiconductor element.   The member for manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin composition layer (a) has a thickness of 30 to 300 μm.   The thermosetting resin composition layer (a) is a resin containing at least one selected from an epoxy resin, a phenol resin, a cyanate resin, a polyamideimide resin, and a thermosetting polyimide resin, and has a maximum particle size of 20 μm or less and an average The member for manufacturing a semiconductor device according to claim 1, comprising an inorganic filler having a particle size of 5 μm or less.   The member for semiconductor device manufacture of any one of Claims 1-3 provided with a support body, the temporary fixing layer, the said semiconductor element, and the said thermosetting resin composition layer (a) in this order. . (I) the step of rearranging the semiconductor element of the member for manufacturing a semiconductor device according to any one of claims 1 to 3, so that the active surface of the semiconductor element and the temporary fixing layer are in contact with each other;
(II) sealing the semiconductor element with the thermosetting resin composition layer (a) to form a thermosetting resin composition layer (b) covering the entire semiconductor element;
(III) a step of curing the thermosetting resin composition layer (b) to form an insulating layer (A);
(IV) forming a photosensitive resin composition layer on the active surface of the semiconductor element in a state where the temporary fixing layer is removed;
(V) subjecting the photosensitive resin composition layer to an exposure process and a development process to form an opening in the photosensitive resin composition layer that reaches the active surface of the semiconductor element;
(VI) a step of curing the photosensitive resin composition layer to form an insulating layer (B);
(VII) forming a seed layer on the insulating layer (B);
(VIII) A step of forming a resist for circuit formation on the seed layer and performing an exposure process and a development process to form a resist pattern for rewiring,
(IX) a step of removing the resist pattern after forming a wiring pattern on a portion of the seed layer exposed from the resist pattern;
(X) removing a portion exposed from the wiring pattern in the seed layer;
(XI) forming an insulating layer (C) having an opening reaching the wiring pattern on the wiring pattern; and
(XII) A method of manufacturing a semiconductor device, comprising: forming an external connection terminal in the opening of the insulating layer (C).   A semiconductor device obtained by the method for manufacturing a semiconductor device according to claim 5. A thermosetting resin composition used for the thermosetting resin composition layer (a) of the member for manufacturing a semiconductor device according to any one of claims 1 to 4,
Contains a resin containing at least one selected from an epoxy resin, a phenol resin, a cyanate resin, a polyamide-imide resin, and a thermosetting polyimide resin, and an inorganic filler having a maximum particle size of 20 μm or less and an average particle size of 5 μm or less. A thermosetting resin composition. It is a thermosetting resin film used for manufacture of the member for semiconductor device manufacture according to any one of claims 1 to 4,
A support, and a thermosetting resin composition layer laminated on the support,
The thermosetting resin film in which the said thermosetting resin composition layer contains the thermosetting resin composition of Claim 7.   A semiconductor device obtained using the thermosetting resin film according to claim 8.

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