JP2017005236A5 - - Google Patents

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Publication number
JP2017005236A5
JP2017005236A5 JP2015178990A JP2015178990A JP2017005236A5 JP 2017005236 A5 JP2017005236 A5 JP 2017005236A5 JP 2015178990 A JP2015178990 A JP 2015178990A JP 2015178990 A JP2015178990 A JP 2015178990A JP 2017005236 A5 JP2017005236 A5 JP 2017005236A5
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JP
Japan
Prior art keywords
semiconductor layer
type semiconductor
formed over
pmc
depletion
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JP2015178990A
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English (en)
Japanese (ja)
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JP6485299B2 (ja
JP2017005236A (ja
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Publication of JP2017005236A5 publication Critical patent/JP2017005236A5/ja
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Publication of JP6485299B2 publication Critical patent/JP6485299B2/ja
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JP2015178990A 2015-06-05 2015-09-11 半導体装置およびその製造方法ならびに電力変換装置 Active JP6485299B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015114375 2015-06-05
JP2015114375 2015-06-05

Publications (3)

Publication Number Publication Date
JP2017005236A JP2017005236A (ja) 2017-01-05
JP2017005236A5 true JP2017005236A5 (cg-RX-API-DMAC7.html) 2017-12-28
JP6485299B2 JP6485299B2 (ja) 2019-03-20

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ID=57754413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015178990A Active JP6485299B2 (ja) 2015-06-05 2015-09-11 半導体装置およびその製造方法ならびに電力変換装置

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JP (1) JP6485299B2 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6485383B2 (ja) 2016-02-23 2019-03-20 株式会社デンソー 化合物半導体装置およびその製造方法
JP6927112B2 (ja) * 2018-03-27 2021-08-25 豊田合成株式会社 半導体装置の製造方法
JP6927116B2 (ja) * 2018-03-28 2021-08-25 豊田合成株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100225409B1 (ko) * 1997-03-27 1999-10-15 김덕중 트렌치 디-모오스 및 그의 제조 방법
CN1248288C (zh) * 2000-02-09 2006-03-29 北卡罗来纳州大学 制造氮化镓半导体层和相关结构的方法
KR100473476B1 (ko) * 2002-07-04 2005-03-10 삼성전자주식회사 반도체 장치 및 그 제조방법
US7989882B2 (en) * 2007-12-07 2011-08-02 Cree, Inc. Transistor with A-face conductive channel and trench protecting well region
JP5721308B2 (ja) * 2008-03-26 2015-05-20 ローム株式会社 半導体装置
JP5442229B2 (ja) * 2008-09-04 2014-03-12 ローム株式会社 窒化物半導体素子の製造方法
JP5884617B2 (ja) * 2012-04-19 2016-03-15 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6107597B2 (ja) * 2013-03-26 2017-04-05 豊田合成株式会社 半導体装置およびその製造方法
JP6041726B2 (ja) * 2013-03-26 2016-12-14 三菱電機株式会社 電力変換装置及び空気調和装置
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
JP6207627B2 (ja) * 2013-11-13 2017-10-04 三菱電機株式会社 半導体装置

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