JP2017003551A - Vertical coil spring probe - Google Patents

Vertical coil spring probe Download PDF

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JP2017003551A
JP2017003551A JP2015127069A JP2015127069A JP2017003551A JP 2017003551 A JP2017003551 A JP 2017003551A JP 2015127069 A JP2015127069 A JP 2015127069A JP 2015127069 A JP2015127069 A JP 2015127069A JP 2017003551 A JP2017003551 A JP 2017003551A
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spring
diameter
contact
coil spring
guide
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文 光中
Guang Zhong Wen
光中 文
延盛 王
yan sheng Wang
延盛 王
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Abstract

PROBLEM TO BE SOLVED: To provide a low cost vertical coil spring probe capable of reducing the length of a probe (shortening), enduring use having strokes of one million times, obtaining a predetermined contact pressure and improving the deflection accuracy of the probe tip.SOLUTION: A vertical coiled spring probe P comprises: a contactor 100 including a contact tip portion 150, a contact element 140, a base part 120, a lower diameter locking part 110 and a guide hole 130; a contactor 300 including a lower connection part 340, a connection guide element 331, a spring guide element 330, an upper diameter locking part 320 and an upper connection part 310; and a coil spring 200 including a spring locking upper end 210, a spring deformation part 220 and a spring locking lower end 230. The lower connection part 340 is arranged in the guide hole 130, and the outer peripheral surface of the lower connection part 340 can slidably contact to the inner peripheral surface of the guide hole 130 between the upper side of the contact tip portion 150 and the lower side of the base part 120.SELECTED DRAWING: Figure 1

Description

本発明は、半導体素子の検査やウェハテストを行うのに適する垂直コイルバネプローブに関するものである。The present invention relates to a vertical coil spring probe suitable for performing a semiconductor element inspection or a wafer test.

この種の従来プローブとしては、導電性針状体を通る電気信号をコイルバネを介して信号授受手段に伝えるようにしたプローブであって(特許文献1、2参照)、導電性針状体の軸部がコイルバネと接触する部分に密着巻き部が形成されているものとした。This type of conventional probe is a probe that transmits an electrical signal passing through a conductive needle-like body to a signal transmitting / receiving means via a coil spring (see Patent Documents 1 and 2). The tightly wound portion is formed at a portion where the portion comes into contact with the coil spring.

特許第3326095号公報Japanese Patent No. 3326095 特許第4566248号公報Japanese Patent No. 4566248 特開2001−93634号公報JP 2001-93634 A

このような上記プローブは、半導体デバイスの電気的諸特性を測定するのに使用される。半導体デバイスの高集積化に伴って、半導体ウエハー上に形成された電子回路が集積マイクロチップの電極に、最大数万本のプローブを接触させ、電気信号を半導体テスターに伝えるのプローブカードとして、プローブに低コスト、高性能を要求される。上記プローブは貴金属の導電性針状体と、金メッキされたコイルバネとを構成されるので、貴金属部品と金メッキ等加工費用のコストにお金がかかりすぎるという問題がある。Such a probe is used to measure electrical characteristics of a semiconductor device. As semiconductor devices become highly integrated, the probe is used as a probe card for transmitting electronic signals to a semiconductor tester by bringing an electronic circuit formed on a semiconductor wafer into contact with the electrodes of the integrated microchip and contacting tens of thousands of probes. In addition, low cost and high performance are required. Since the probe comprises a noble metal conductive needle and a gold-plated coil spring, there is a problem that the cost of processing costs such as noble metal parts and gold plating is excessive.

また、プローブの長さを短くすると、コスト低減効果が得られる。しかも、前記プローブが短い製品の場合において、コイルバネより導電性針状体のほうが長く、同じように通常パイプ型プローブの長さを短くすると、パイプよりも導電性針状体のほうが長くなると、導電性針状体の先端の振れ精度が±20μm以上に大きくなるという問題があった。実際には半導体デバイスの微細化により、電気的諸特性を測定する時にプローブ先端部が所定の±15μm振れ精度に必要されている、プローブ先端の位置ズレを超えると接触オープン原因になる。Further, when the length of the probe is shortened, a cost reduction effect can be obtained. Moreover, in the case where the probe is a short product, the conductive needle is longer than the coil spring. Similarly, if the length of the normal pipe probe is shortened, the conductive needle is longer than the pipe. There is a problem that the deflection accuracy of the tip of the needle-like body is increased to ± 20 μm or more. Actually, due to miniaturization of the semiconductor device, when the electrical characteristics of the probe are measured, if the probe tip part exceeds the positional deviation of the probe tip, which is required for a predetermined ± 15 μm deflection accuracy, it causes contact open.

さらに、半導体素子電気的諸特性を測定する時にストローク回数100万回の寿命が要求される、100万回の繰り返し作動でプローブ部品の金属の摩耗や金属疲労によるプローブの電気抵抗や針圧の問題が発生しても、この特性要求範囲以外に発生しないようにしなければならない。上記プローブのコイルバネの密着巻きコイル体に対して摺動可能に電気的に接続されているのため、このコイルバネの内壁も金メッキ層がまた2μm以上厚さを提供されているに必要となる、過去の実績から、あまり厚く金メッキ層をのせすぎると、金の凝着磨耗で導電性針状体が戻ってこなくなる問題の発生率が急激に高まる。あと懸念材料として、金メッキ層の層厚は厚くすればするほど、鍍金コストがかなり上がる。In addition, when measuring various electrical characteristics of semiconductor elements, a life of 1 million strokes is required. Problems of probe electrical resistance and needle pressure due to metal wear and metal fatigue of probe parts after 1 million strokes. Even if this occurs, it must be prevented from occurring outside this required characteristic range. Since the probe coil spring is electrically slidably connected to the tightly wound coil body, the inner wall of this coil spring is also required for the gold plating layer to be provided with a thickness of 2 μm or more. From the above results, if the gold plating layer is too thick, the rate of occurrence of the problem that the conductive needles do not return due to the adhesive wear of gold increases rapidly. As a further concern, the plating cost increases considerably as the thickness of the gold plating layer increases.

また、上記プローブの長さにより、上記プローブを支持するのホルダにおいて、上ガイド板と、下ガイド板とを備えてしなければならない。下ガイド板のガイド孔には、プローブ導電性針状体の下側接触部外径よりも大きく、プローブの外径よりも小さい貫通孔であって、プローブ導電性針状体の下側接触部が挿通される貫通孔が設けられており、プローブ導電性針状体下側接触部が測定対象物の検査パッドと接触可能に設けられた、上ガイド板には、プローブ上側鍔部よりも外径が大きい貫通孔であって、当該プローブ上側鍔部が上下動自在に挿通される上側開口が設けられており。上記プローブを支持するの上ガイド板と下ガイド板は最大数万本のプローブを載せる、そしては上ガイド板と下ガイド板に最大数万個高精度の貫通孔を作るのに、かなり大きいコストになっている。Further, the holder for supporting the probe must have an upper guide plate and a lower guide plate depending on the length of the probe. The guide hole of the lower guide plate is a through-hole that is larger than the outer diameter of the lower contact portion of the probe conductive needle and smaller than the outer diameter of the probe, and the lower contact portion of the probe conductive needle The upper guide plate has a through-hole through which the probe conductive needle-shaped lower body contact portion can be brought into contact with the test pad of the object to be measured. A through hole having a large diameter is provided with an upper opening through which the probe upper collar is inserted so as to be movable up and down. The upper guide plate and the lower guide plate that support the above-mentioned probe can be loaded with up to several tens of thousands of probes, and up to tens of thousands of high-precision through holes can be made in the upper guide plate and the lower guide plate. It has become.

特許文献1に示すように、断面視略円形の線材を巻き回して作成されたコイルバネを用いた場合、コイルバネの内周面は凸凹面であり、その各凸部(即ち、線材の各頂部)が導電性針状体の外周面に接触するだけであるから、コイルバネの内周面と導電性針状体の摺動面積が小さくなり、プローブ全体の電気抵抗値が大きくなる。As shown in Patent Document 1, when a coil spring created by winding a wire having a substantially circular cross-sectional view is used, the inner peripheral surface of the coil spring is a concave and convex surface, and each convex portion (that is, each top portion of the wire). Is only in contact with the outer peripheral surface of the conductive needle-like body, the sliding area between the inner peripheral surface of the coil spring and the conductive needle-like body is reduced, and the electrical resistance value of the entire probe is increased.

ところが、半導体チップ上半球状に形成された検査電極(はんだバンプともいう)を持つの検査場合に、従来プローブの導電性針状体の山状先端部に凹部を有しており、半導体デバイスを測定する時にプローブの導電性針状体先端部はチップの検査電極と接触して、前記プローブの導電性針状体の山状先端部の凹部にはんだバンプのゴミがたまりやすくなっている、正確な電気特性を測定することが困難となる、従って、電気抵抗値に安定するのため、常にプローブ先端部にクリーニングすることが必要です。しかし、導電性針状体先端部が常にクリーニングされと、半導体デバイス測定工程の効率を影響し、同時に導電性針状体先端部が摩耗されていると、電気抵抗値、耐久性に対して懸念している。However, in the case of an inspection having an inspection electrode (also referred to as a solder bump) formed in a hemispherical shape on a semiconductor chip, the conventional probe has a concave portion at the tip of the conductive needle-like body, When measuring, the tip of the conductive needle of the probe comes into contact with the inspection electrode of the tip, and the solder bump dust tends to collect in the concave portion of the peak of the conductive needle of the probe. Therefore, it is necessary to always clean the probe tip in order to stabilize the electrical resistance. However, if the tip of the conductive needle is always cleaned, it will affect the efficiency of the semiconductor device measurement process. At the same time, if the tip of the conductive needle is worn, there is concern about the electrical resistance and durability. doing.

上記事情に鑑みて創案されたものであって、その目的とするところは、本発明の垂直コイルバネプローブの長さは、約前記プローブの半分以下程度ができ、且つストローク回数100万回の使用に耐えることができ、所定の接触圧を得ることができる、付着しているゴミをクリーニングカット工程を減少することでも安定的な電気に接続されている、更にプローブ先端の振れ精度向上の垂直コイルバネプローブを提供することができる。且つ本発明プローブを支持するのホルダにおいて、ホルダでガイド板を一枚しか使用しないので、プローブユニットの組み立て精度が出しやすく、更に製造コストがかなり安くなることである。The present invention was created in view of the above circumstances, and the purpose of the vertical coil spring probe of the present invention is about half the length of the probe or less and can be used for 1 million strokes. A vertical coil spring probe that can withstand and obtain a predetermined contact pressure, is connected to stable electricity by reducing the cleaning cut process for adhering dust, and further improves the deflection accuracy of the probe tip Can be provided. In the holder for supporting the probe of the present invention, since only one guide plate is used in the holder, the assembly accuracy of the probe unit can be easily obtained, and the manufacturing cost is considerably reduced.

かかる、上記課題を解決するために、本発明の垂直コイルバネプローブは、接触針、接続針及びコイルバネとを構成されている、接触針は、接触先端部、接触子、ベース部、下係止径部又案内孔を備えたボトムプランジャーであって、接続針は、下接続部、接続案内子、バネ案内子、上係止径部又上接続部を備えたトッププランジャーであって、コイルバネは、バネ係止上端、バネ変形部又はバネ係止下端を備えておる。In order to solve the above-described problems, the vertical coil spring probe of the present invention includes a contact needle, a connection needle, and a coil spring. The contact needle includes a contact tip, a contact, a base, and a lower locking diameter. A bottom plunger having a part or guide hole, wherein the connecting needle is a bottom plunger, a connection guide, a spring guide, a top plunger having an upper locking diameter part or an upper connection part, and a coil spring Is provided with a spring locking upper end, a spring deforming portion or a spring locking lower end.

また、前記接触針は、ボトムプランジャー中心軸上で接触先端部に続く軸状部分接触子により続く径の太いベース部と、当該ベース部により続くも径の細い下係止径部とを有しており、下係止径部、ベース部、接触子又接触先端部にかつ同径の案内孔が形成されておる。The contact needle has a base portion with a large diameter that is continued by a shaft-shaped partial contact that follows the contact tip on the center axis of the bottom plunger, and a lower locking diameter portion that is continuous with the base portion but has a small diameter. In addition, a guide hole having the same diameter is formed in the lower locking diameter portion, the base portion, the contactor, or the contact tip portion.

次に、前記接触針はバラジム合金等導電性を有する円柱体を切削加工することにより各部が作成される、量産化に適している。Next, the contact needle is suitable for mass production in which each part is created by cutting a cylindrical body having conductivity such as a balladium alloy.

しかも、前記接触針の材質がバラジム合金となっているため、酸化しにくい性能を持って、従って、案内孔内周面に酸化膜が発生しにくいことで、プローブの電気接触抵抗の特性要求範囲以外に発生しにくい。また、バラジム合金の硬さが金メッキ膜の硬さより高いので、案内孔の内周面に対して下接続部が摩耗しにくいことにより、金属の凝着磨耗で接触針が戻ってこなくなる問題の発生率が低くなっている。In addition, since the contact needle is made of a balladium alloy, it has a performance that is difficult to oxidize, and therefore, an oxide film is not easily generated on the inner peripheral surface of the guide hole. It is hard to occur other than. In addition, since the hardness of the balladium alloy is higher than the hardness of the gold plating film, the lower connection part is less likely to wear against the inner peripheral surface of the guide hole, causing a problem that the contact needle does not return due to metal adhesion wear. The rate is low.

さらに、前記接触針が案内孔を備えており、当該接触針の接触先端部に中空部が形成されので、半導体チップ検査時に一定のストロークまでに検査電極のゴミが付着しにくい、クリーニングすることが減少されると、ボトムプランジャー先端部の摩耗が減少されている、そして、半導体デバイス測定工程の効率をアップし、耐久性を向上させる。Further, since the contact needle has a guide hole, and a hollow portion is formed at the contact tip of the contact needle, cleaning of the inspection electrode is difficult to deposit by a certain stroke during semiconductor chip inspection. When reduced, the wear of the bottom plunger tip is reduced, increasing the efficiency of the semiconductor device measurement process and improving the durability.

なお、前記接続針は、トッププランジャー中心軸上で接続案内子の下端に続く軸状部分径の略太く又案内孔の内径より略細い下接続部であり、接続案内子の上端に続く軸状部分径の略太く又上記コイルバネの内径より小さいバネ案内子であり、バネ案内子の上端に続く軸状部分径の大きい上係止径部であり、上係止径部の直径がコイルバネの内径より略細くであり、上係止径部の上端に続く円錐状の上接続部が形成されており、上接続部の底部直径はコイルバネの外径と略同、上接続部の上先端部が円錐突出状の形成されており、上先端部が先鋭化されていると、プローブユニットの基板電極に接触する際に、当該電極上の酸化膜を容易に突き破ることが可能になる、よって、上接続部の上先端部と前記電極との電気的な接続を安定させることができる。The connecting needle is a lower connecting portion that is substantially thicker in the axial portion diameter following the lower end of the connection guide on the central axis of the top plunger and substantially thinner than the inner diameter of the guide hole. This is a spring guide that is substantially thicker in diameter and smaller than the inner diameter of the coil spring, and is an upper locking diameter portion having a large shaft-like diameter following the upper end of the spring guide, and the diameter of the upper locking diameter portion of the coil spring is A conical upper connection portion is formed which is substantially thinner than the inner diameter and continues to the upper end of the upper locking diameter portion, and the bottom diameter of the upper connection portion is substantially the same as the outer diameter of the coil spring, and the upper tip portion of the upper connection portion Is formed in a conical protruding shape, and when the upper tip is sharpened, it is possible to easily break through the oxide film on the electrode when contacting the substrate electrode of the probe unit. Stabilize the electrical connection between the upper tip of the upper connection and the electrode. Can.

他の点、前記接続針はバラジム合金やベリリウム銅等の導電性を有する円柱体を切削加工することにより各部が作成される、量産化に適している。In other respects, the connecting needle is suitable for mass production in which each part is created by cutting a conductive cylindrical body such as a balladium alloy or beryllium copper.

また、コイルバネは、断面視が丸状又はリボン状バネ線材を用いて、同一中心軸上同じコイル内径の螺旋状を巻き回して作製されたものである。このコイルバネは、バネ係止上端、バネ係止下端及びバネ係止上端、バネ係止下端の間に設けられたバネ変形部を備えている。コイルバネを高精度且つ容易に作製することができる、量産化に適している。The coil spring is produced by winding a spiral shape having the same coil inner diameter on the same central axis using a round or ribbon-like spring wire in cross-sectional view. The coil spring includes a spring deformation upper end, a spring engagement lower end, a spring engagement upper end, and a spring deformation portion provided between the spring engagement lower ends. The coil spring can be manufactured with high accuracy and is suitable for mass production.

コイル内径は接触針の下係止径部外径又接続針の上係止径部外径により略太くて、コイル外径は接触針のベース部外径と、又接続針の上接続部底部直径とほぼ同じになっている。The inner diameter of the coil is substantially thicker due to the outer diameter of the lower locking diameter of the contact needle or the upper diameter of the upper locking diameter of the connecting needle. The outer diameter of the coil is the outer diameter of the base of the contacting needle and the bottom of the upper connecting portion of the connecting needle. It is almost the same as the diameter.

コイルバネは、接続針の接続案内子及びバネ案内子の外周に配置され、バネ係止上端が接続針の上係止径部の側面に当接し、バネ係止下端が接触針の下係止径部の側面に当接し、コイルバネが接続針の接続案内子及びバネ案内子の軸状方向に圧縮可能であり、バネ変形部がバネ性を有している。案内孔の中に接続針の下接続部が配置されと接触してにより、下接続部の外周面は接触先端部上側とベース部下側間の案内孔の内周面に摺動自在に接触することができる。The coil spring is arranged on the connection guide of the connection needle and the outer periphery of the spring guide, the upper end of the spring lock contacts the side surface of the upper lock diameter of the connection needle, and the lower end of the spring lock is the lower lock diameter of the contact needle. The coil spring is compressible in the axial direction of the connection guide of the connection needle and the spring guide, and the spring deforming portion has a spring property. When the lower connecting portion of the connecting needle is disposed in the guide hole, the outer peripheral surface of the lower connecting portion is slidably in contact with the inner peripheral surface of the guide hole between the contact tip upper side and the base lower side. be able to.

このような垂直コイルバネプローブがストローク時によって、下接続部が案内孔の内周面の底部に摺動されているので、接触先端部の先端振れ精度に対してかなり低減することができる、同時に下接続部と接触子先端部の距離が短くなると、両者の電気的な接続が安定して、プローブ全体の電気抵抗値を更に低減することができる。Since such a vertical coil spring probe is slid to the bottom of the inner peripheral surface of the guide hole depending on the stroke, the tip deflection accuracy of the contact tip can be considerably reduced. When the distance between the connecting portion and the contact tip is shortened, the electrical connection between the two is stabilized, and the electrical resistance value of the entire probe can be further reduced.

以下、本発明の実施例に係る垂直コイルバネプローブPについて図1、図2を参照しつついて説明する。図1は本発明の実施例に係る垂直コイルバネプローブPの概略的断面図、図2は同記プローブPの概略的分解断面図である。Hereinafter, a vertical coil spring probe P according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic sectional view of a vertical coil spring probe P according to an embodiment of the present invention, and FIG. 2 is a schematic exploded sectional view of the probe P.

図1、図2に示す半導体デバイスの検査に用いられる検査治具に組み込まれて使用される垂直コイルバネプローブPは、接触針100と、コイルバネ200と、接続針300とを備えている。以下、該当プローブPの各構成要素について詳しく説明する。A vertical coil spring probe P incorporated and used in an inspection jig used for inspecting a semiconductor device shown in FIGS. 1 and 2 includes a contact needle 100, a coil spring 200, and a connection needle 300. Hereinafter, each component of the probe P will be described in detail.

まず、接触針100は、ボトムプランジャーの中心軸上で下係止径部110と、ベース部120と、案内孔130と、接触子140と接触先端部150とを構成されている。First, the contact needle 100 includes a lower locking diameter portion 110, a base portion 120, a guide hole 130, a contact 140, and a contact tip portion 150 on the central axis of the bottom plunger.

このように作製されたボトムプランジャーに、接触先端部150、接触子140とベース部120、下係止径部110に同中心軸上で且つ同じ内径の案内孔130に設けられたものである、円筒状の案内孔130により、内周面が平坦面となっていること。このような接触針100はパラジウム合金やベリリウム銅合金等の導電性を有する円柱体を切削加工することにより各部が作製される、接触針100を高精度に作製することができるので、量産化に適している。The bottom plunger manufactured in this manner is provided in the guide tip 130 having the same inner diameter and the same inner diameter at the contact tip 150, the contact 140 and the base 120, and the lower locking diameter 110. The inner peripheral surface of the cylindrical guide hole 130 is a flat surface. Since such a contact needle 100 can be manufactured with high precision, each part is manufactured by cutting a conductive cylindrical body such as a palladium alloy or a beryllium copper alloy. Is suitable.

従って、前記接触針100はバラジム合金材質の場合、案内孔130内周面に酸化膜が発生しにくいことで、プローブの電気抵抗の特性要求範囲以外に発生しにくい。また、バラジム合金材質の硬さが金メッキ膜の硬さより高いので、案内孔130内周面が摩耗しにくい性能を持っている、それゆえ下記下接続部340に対して案内孔130内周面の摺動することにより、金属の凝着磨耗で接触針100が戻ってこなくなる問題の発生率が低くなる。Therefore, when the contact needle 100 is made of a ballady alloy material, it is difficult to generate an oxide film on the inner peripheral surface of the guide hole 130, so that the contact needle 100 does not easily occur outside the required range of the electrical resistance characteristic of the probe. In addition, since the hardness of the material of the ballady alloy is higher than the hardness of the gold plating film, the inner peripheral surface of the guide hole 130 has a performance that is less likely to be worn. By sliding, the occurrence rate of the problem that the contact needle 100 does not return due to metal adhesion wear decreases.

なお、後述する被検査体半導体デバイス400上半球状に形成された検査パッド410(はんだバンプともいう)を持つの検査場合、接触子140下端に山突出状の接触先端部150が形成されており、先端部が先鋭化されている、これにより、接触先端部150が被検査半導体デバイス400の検査パッド410との所定の接触圧を確保すると共に、検査パッド410上の酸化膜を容易に突き破ることができる。同時に前記接触針100はバラジム合金材質の場合、接触先端部150の本体に酸化膜が発生しにくいことで、プローブの電気抵抗の特性要求範囲以外に発生しにくい、よって、測定するの信号が不具合を防止することができる。When an inspection pad 410 (also referred to as a solder bump) formed in a hemispherical shape on the semiconductor device 400 to be inspected, which will be described later, is provided, a protruding tip 150 is formed at the lower end of the contact 140. The tip is sharpened, so that the contact tip 150 ensures a predetermined contact pressure with the test pad 410 of the semiconductor device 400 to be inspected and easily breaks through the oxide film on the test pad 410. Can do. At the same time, when the contact needle 100 is made of a balladium alloy material, it is difficult to generate an oxide film on the main body of the contact tip 150, so that it is difficult to generate outside the required characteristic range of the electrical resistance of the probe. Can be prevented.

他の点、前記接触針100については、接触子140下端に山突出状の接触先端部150とが形成されており、ただし、接触先端部150の中心に設けられた穴を開けない及び接触先端部150が円錐突出状の形成されている限り任意に設計変更することが可能である。In other respects, the contact needle 100 is formed with a protrusion tip-like contact tip 150 at the lower end of the contact 140, provided that a hole provided at the center of the contact tip 150 is not formed and the contact tip is not formed. The design can be arbitrarily changed as long as the portion 150 has a conical protruding shape.

かかる、接続針300はトッププランジャーの中心軸上で上接続部310と、上係止径部320と、バネ案内子330と、接続案内子331と、下接続部340とを構成されている。接続案内子331の下端に続く軸状部分直径の略太くまた案内孔130の内径より略細い下接続部340であり、接続案内子331の上端に続く軸状部分直径の略太くまた上記コイルバネ200の内径より細いバネ案内子330であり、バネ案内子330の上端に続く軸状部分直径の太い上係止径部320であり、上係止径部320の直径がコイルバネ200の内径より略細くであり、上係止径部320の上端に続く円錐状の上接続部310が形成されており、上接続部310の底部直径はコイルバネ200の外径と略同、上接続部310の上先端部が円錐突出状の形成されており。上先端部が先鋭化されていると、プローブユニットUの接続基板600の基板下パターン630に接触する際に、基板下パターン630上の酸化膜を容易に突き破ることが可能になる、よって、上接続部310の上先端部と前記基板電極との電気的な接続を安定させることができる。The connecting needle 300 includes an upper connecting portion 310, an upper locking diameter portion 320, a spring guide 330, a connection guide 331, and a lower connecting portion 340 on the central axis of the top plunger. . A lower connecting portion 340 that is substantially thicker in the diameter of the shaft-shaped portion following the lower end of the connection guide 331 and substantially thinner than the inner diameter of the guide hole 130, and is substantially thicker in the diameter of the shaft-shaped portion following the upper end of the connection guide 331. A spring guide 330 having a diameter smaller than the inner diameter of the coil spring 200, and an upper locking diameter portion 320 having a thick shaft-like diameter following the upper end of the spring guide 330. The diameter of the upper locking diameter portion 320 is substantially thinner than the inner diameter of the coil spring 200. A conical upper connection portion 310 is formed following the upper end of the upper locking diameter portion 320. The bottom diameter of the upper connection portion 310 is substantially the same as the outer diameter of the coil spring 200, and the upper tip of the upper connection portion 310 is formed. The part is formed in a conical protruding shape. When the upper tip is sharpened, it is possible to easily break through the oxide film on the lower substrate pattern 630 when contacting the lower substrate pattern 630 of the connection substrate 600 of the probe unit U. The electrical connection between the upper end portion of the connecting portion 310 and the substrate electrode can be stabilized.

このような接触針100の接触先端部150が検査パット410に接触して、オーバードライブを加えられても、バネ案内子330が下係止径部110上端に接触させない、同時に下接続部340が接触先端部150に接触させない、かつ下接続部340が案内孔130の内周面に接触するように設定されていること。Even if the contact tip 150 of the contact needle 100 contacts the inspection pad 410 and overdrive is applied, the spring guide 330 does not contact the upper end of the lower locking diameter portion 110, and at the same time, the lower connection portion 340 It is set so as not to contact the contact tip 150 and so that the lower connecting portion 340 contacts the inner peripheral surface of the guide hole 130.

このように接続案内子331が案内孔130の内周面と、またバネ案内子330がコイルバネ200の内周面との間で距離を保持している。即ち、垂直コイルバネプローブPがストローク時によって、下接続部340が案内孔130中に往復路摺動すると、バネ案内子330がコイルバネ200内周面に、接続案内子331が案内孔130内周面に引っ掛かり難くなるので、垂直コイルバネプローブP全体の荷重ヒステリシスを低減することができる、更に安定的な電気的接続を図ることができる。Thus, the connection guide 331 maintains a distance between the inner peripheral surface of the guide hole 130 and the spring guide 330 is maintained between the inner peripheral surface of the coil spring 200. In other words, when the vertical coil spring probe P is in a stroke and the lower connecting portion 340 slides back and forth in the guide hole 130, the spring guide 330 is on the inner peripheral surface of the coil spring 200, and the connection guide 331 is on the inner peripheral surface of the guide hole 130. Therefore, it is possible to reduce the load hysteresis of the entire vertical coil spring probe P and to achieve a more stable electrical connection.

また、このように作成された下接続部340が挿入される案内孔130を備えており、案内孔130の内周面中に下接続部340が配置されると、下接続部340が接触先端部150上側とベース部120下側間の案内孔130の内周面に摺動されている。垂直コイルバネプローブPがストロークの場合、下接続部340の円柱体外周面は案内孔130底部上方の円筒内周面に同軸往復移動自在に摺動する、そして、案内孔130下端の接触先端部150の先端振れ精度に対してかなり低減することができる。In addition, the guide hole 130 into which the lower connection portion 340 thus created is inserted is provided. When the lower connection portion 340 is disposed in the inner peripheral surface of the guide hole 130, the lower connection portion 340 is brought into contact with the tip of the contact. It is slid on the inner peripheral surface of the guide hole 130 between the upper part 150 and the lower part of the base part 120. When the vertical coil spring probe P is a stroke, the outer peripheral surface of the columnar body of the lower connection portion 340 slides on the inner peripheral surface of the cylinder above the bottom of the guide hole 130 so as to be reciprocally movable coaxially. The tip runout accuracy can be considerably reduced.

このような案内孔130の円筒内周面に下接続部340の円柱体外周面と摺動面積が大きくなり、接触の電気抵抗値が小さくなる、更に垂直コイルバネプローブPがストローク時によって、下接続部340が案内孔130の円筒形内周面底部上方に接触されていることで、下接続部340は接触先端部150との最短距離になると、両者の電気的な接続が安定している、プローブ全体の電気抵抗値を更に低減することができる。The cylindrical inner peripheral surface of the guide hole 130 has a sliding area larger than that of the cylindrical outer peripheral surface of the lower connection portion 340, and the electrical resistance value of the contact decreases. Further, the vertical coil spring probe P is connected to the lower connection depending on the stroke. When the part 340 is in contact with the upper part of the bottom of the cylindrical inner peripheral surface of the guide hole 130, the lower connection part 340 is stable in electrical connection between the contact tip part 150 and the lower end part 340 when the shortest distance is reached. The electrical resistance value of the entire probe can be further reduced.

接続針300の下接続部340は円柱状に限定されることはない。例えば、湾曲した形状のものや突起状のものであっても良い。The lower connecting portion 340 of the connecting needle 300 is not limited to a cylindrical shape. For example, a curved shape or a projection shape may be used.

更に、接続案内子331の直径とバネ案内子330の直径及び下接続部340の直径が同径構成となっている限り任意に設計変更することが可能である。Furthermore, the design can be arbitrarily changed as long as the diameter of the connection guide 331, the diameter of the spring guide 330, and the diameter of the lower connection portion 340 have the same diameter configuration.

接続針300はバラジム合金やベリリウム銅等導電性を有する円柱体材料を切削加工することにより各部が作成される、接続針300を高精度に作製することができるので、量産化に適している。The connecting needle 300 is suitable for mass production because the connecting needle 300 can be manufactured with high accuracy by cutting each part of a cylindrical material having conductivity such as a balladium alloy or beryllium copper.

また、コイルバネ200は、断面視が丸状バネ線材を用いて、同中心軸上同じコイル内径で螺旋状を巻き回して作製されたものである。このコイルバネ200は、バネ係止上端210、バネ係止下端230及びバネ係止上端210、バネ係止下端230の間に設けられたバネ変形部220を備えている。コイルバネ200を高精度且つ容易に作製することができる、量産化に適している。The coil spring 200 is manufactured by winding a spiral with the same coil inner diameter on the same central axis using a circular spring wire in cross-sectional view. The coil spring 200 includes a spring locking upper end 210, a spring locking lower end 230, a spring locking upper end 210, and a spring deformation portion 220 provided between the spring locking lower end 230. The coil spring 200 can be manufactured with high accuracy and is suitable for mass production.

コイルバネ200のコイル内径は、下係止径部110の外径又上係止径部320の外径により略太くなっている。コイルバネ200のコイル外径は、ベース部120の外径又上接続部310の底部外径と同じになっている。バネ変形部220はバネ案内子330及び接続案内子331の軸状方向に伸縮可能なコイル部である、バネ変形部220がバネ性を有している。The coil inner diameter of the coil spring 200 is substantially thick due to the outer diameter of the lower locking diameter portion 110 or the outer diameter of the upper locking diameter portion 320. The coil outer diameter of the coil spring 200 is the same as the outer diameter of the base portion 120 or the bottom outer diameter of the upper connection portion 310. The spring deformation part 220 is a coil part that can be expanded and contracted in the axial direction of the spring guide 330 and the connection guide 331, and the spring deformation part 220 has a spring property.

コイルバネ200については、断面視リボン状バネ線材を巻き回して作製されたものを使用していると、内周面が平坦面にされたコイルバネである限り任意に設計変更することが可能である。The coil spring 200 can be arbitrarily changed in design as long as it is a coil spring whose inner peripheral surface is a flat surface when it is manufactured by winding a ribbon-like spring wire in cross-sectional view.

このような構成の垂直コイルバネプローブPは次のように組立てられる。先ず、コイルバネ200が接続針300のバネ案内子330及び接続案内子331の外周に配置される。その後、バネ係止上端210が上係止径部320の側面に当接している。そして、下接続部340が案内孔130の中に配置される。その後、前記バネ係止下端230が前記下係止径部110の側面に当接している。これにより、垂直コイルバネプローブPの組立を容易に行うことができる。The vertical coil spring probe P having such a configuration is assembled as follows. First, the coil spring 200 is disposed on the outer periphery of the spring guide 330 and the connection guide 331 of the connection needle 300. Thereafter, the spring locking upper end 210 is in contact with the side surface of the upper locking diameter portion 320. Then, the lower connection portion 340 is disposed in the guide hole 130. Thereafter, the lower end portion 230 of the spring is in contact with the side surface of the lower engaging diameter portion 110. Thereby, the assembly of the vertical coil spring probe P can be performed easily.

また、コイルバネ200を接触針100に取り付ける方法については接着する以外ように周知の取付手段を用いることが可能である。例えば、接触針100のベース部120の下側接触子140にカシメするようにしても良いし、コイルバネ200のバネ係止下端230を接触針100の下係止径部110上に設けた凸部に嵌合させるようにしても構わない。コイルバネ200を接続針300に同様の取り付ける方法ができるようになる。As for the method of attaching the coil spring 200 to the contact needle 100, it is possible to use known attachment means other than bonding. For example, the lower contact 140 of the base portion 120 of the contact needle 100 may be caulked, or the convex portion provided with the spring locking lower end 230 of the coil spring 200 on the lower locking diameter portion 110 of the contact needle 100. You may make it fit in. A similar method for attaching the coil spring 200 to the connection needle 300 can be performed.

本発明の垂直コイルバネプローブPを用いたプローブユニットUに組み込まれるの基本構成は、図3に示すように、以下、プローブユニットUについて図面を参照しつつ説明する。図3は垂直コイルバネプローブPを備えたプローブユニットUの概略的断面図、同記垂直コイルバネプローブPが被検査体半導体デバイス400の検査パッド410に接触する前の状態を示す図であって、前記プローブユニットUは、被検査体半導体デバイス400の複数の検査パッド410に各々接触可能な複数の垂直コイルバネプローブPと、垂直コイルバネプローブPを収納保持するケーシング(即ち、ガイド板500)と、このケーシングの上方に配置される接続基板600とを備えている。以下、詳しく説明する。As shown in FIG. 3, the basic configuration of the probe unit U incorporated in the probe unit U using the vertical coil spring probe P of the present invention will be described below with reference to the drawings. FIG. 3 is a schematic cross-sectional view of the probe unit U including the vertical coil spring probe P, and shows a state before the vertical coil spring probe P contacts the inspection pad 410 of the semiconductor device 400 to be inspected. The probe unit U includes a plurality of vertical coil spring probes P that can contact the plurality of test pads 410 of the semiconductor device 400 to be inspected, a casing (that is, the guide plate 500) that houses and holds the vertical coil spring probes P, and the casing. And a connection board 600 disposed above the board. This will be described in detail below.

まず、短い垂直コイルバネプローブPを収納保持するケーシングは、ただ一枚ガイド板500を具備したことを特徴とする。ガイド板500の底部には、被検査体半導体デバイス400の複数の検査パッド410の位置に各々対応した箇所に複数のガイド孔520が設けられて、ガイド板500の上部には、底部のガイド孔520と各々同心円筒形の支持筒510が設けられている。First, the casing for storing and holding the short vertical coil spring probe P includes only one guide plate 500. A plurality of guide holes 520 are provided at locations corresponding to the positions of the plurality of inspection pads 410 of the device under test semiconductor device 400 at the bottom of the guide plate 500, and the bottom guide holes are provided at the top of the guide plate 500. 520 and a support cylinder 510 each having a concentric cylindrical shape are provided.

また、支持筒510の直径は垂直コイルバネプローブPのコイルバネ200の外径よりも略太くなっている。ガイド孔520の直径は接触子140の外径より略太くて、且つ、支持筒510の直径よりも細くなるように設けられている。従って、垂直コイルバネブローブPの接触子140がガイド板500の底部ガイド孔520を貫通して可能になる。Further, the diameter of the support cylinder 510 is substantially larger than the outer diameter of the coil spring 200 of the vertical coil spring probe P. The diameter of the guide hole 520 is substantially larger than the outer diameter of the contact 140 and is smaller than the diameter of the support tube 510. Accordingly, the contact 140 of the vertical coil spring probe P can pass through the bottom guide hole 520 of the guide plate 500.

その後、ガイド板500には、被検査体半導体デバイス400の複数の検査パッド410の位置に各々対応した箇所に複数の垂直コイルバネプローブPの接触子140が複数のガイド孔520には各々挿入されて、同時に垂直コイルバネブローブPのベース部120以上部分が各々対応した箇所に複数の円筒形の支持筒510に各々挿入される。Thereafter, contacts 140 of the plurality of vertical coil spring probes P are inserted into the plurality of guide holes 520 at locations corresponding to the positions of the plurality of inspection pads 410 of the semiconductor device 400 to be inspected. At the same time, the vertical coil spring probe P is inserted into the plurality of cylindrical support cylinders 510 at locations corresponding to the portions of the base portion 120 or more, respectively.

従って、ガイド板500の底部ガイド孔520の縁部上には垂直コイルバネプローブPのベース部120が載置されて、ガイド孔520中には接触子140が摺動可能になる。Accordingly, the base portion 120 of the vertical coil spring probe P is placed on the edge of the bottom guide hole 520 of the guide plate 500, and the contact 140 can slide in the guide hole 520.

次に、接続基板600は、その上下面に各々設けられた複数の基板上パターン610と、基板下パターン630と、この基板上パターン610、基板下パターン630を各々接続する複数の内部配線プレート620とを有している。基板下パターン630には垂直コイルバネプローブPの上接続部310が各々接触する。Next, the connection substrate 600 includes a plurality of substrate upper patterns 610, a substrate lower pattern 630, and a plurality of internal wiring plates 620 that connect the substrate upper pattern 610 and the substrate lower pattern 630, respectively. And have. The upper connection portions 310 of the vertical coil spring probes P are in contact with the lower substrate pattern 630.

これにより、垂直コイルバネプローブPのベース部120以上部分が接続基板600とガイド孔520の縁部との間で保持され、コイルバネ200のバネ変形部220が圧縮状態で保持される。なお、基板上パターン610には、図示しない測定装置が接続される。As a result, the portion of the vertical coil spring probe P that is not lower than the base portion 120 is held between the connection substrate 600 and the edge of the guide hole 520, and the spring deforming portion 220 of the coil spring 200 is held in a compressed state. Note that a measurement device (not shown) is connected to the on-board pattern 610.

このような構成のプローブユニットUは次のように組み立てられる。まず、ガイド板500の支持筒510に上方から垂直コイルバネプローブPを各々挿入する。そして、ガイド板500の底部ガイド孔520に垂直コイルバネプローブPの接触子140を各々挿入する。すると、垂直コイルバネプローブPのベース部120の下面がガイド板500の底部ガイド孔520の縁部に各々当接する。The probe unit U having such a configuration is assembled as follows. First, the vertical coil spring probes P are inserted into the support cylinder 510 of the guide plate 500 from above. Then, the contacts 140 of the vertical coil spring probe P are inserted into the bottom guide holes 520 of the guide plate 500, respectively. Then, the lower surface of the base portion 120 of the vertical coil spring probe P comes into contact with the edge portion of the bottom guide hole 520 of the guide plate 500.

その後、接続基板600をケーシング(即ち、ガイド板500)に近接させて、この状態で、接続基板600の基板下パターン630を垂直コイルバネプローブPの上接続部310に各々接触させる。これにより、垂直コイルバネプローブPのコイルバネ200のバネ変形部220が接続基板600とベース部120の間で圧縮される。Thereafter, the connection substrate 600 is brought close to the casing (that is, the guide plate 500), and the lower substrate pattern 630 of the connection substrate 600 is brought into contact with the upper connection portion 310 of the vertical coil spring probe P in this state. Thereby, the spring deformation part 220 of the coil spring 200 of the vertical coil spring probe P is compressed between the connection substrate 600 and the base part 120.

この状態で、ケーシング(即ち、ガイド板500)を上側接続基板600に取り付ける。In this state, the casing (that is, the guide plate 500) is attached to the upper connection board 600.

さらに、図4に示すようには垂直コイルバネプローブユニットUの概略的断面図であって、同記垂直コイルバネプローブPが被検査体半導体デバイス400の検査パッド410に接触した状態を示す図である。Further, as shown in FIG. 4, it is a schematic cross-sectional view of the vertical coil spring probe unit U, and shows the state where the vertical coil spring probe P is in contact with the inspection pad 410 of the semiconductor device 400 to be inspected.

他の点、特許第3326095号公報と特許第4566248号公報のケーシングについては、上側ガイド板と、下側ガイド板と、上側ガイド板と下側ガイド板との間に設けられたスペーサとを有している。In other respects, the casings of Japanese Patent No. 326095 and Japanese Patent No. 4566248 have an upper guide plate, a lower guide plate, and a spacer provided between the upper guide plate and the lower guide plate. doing.

本発明の垂直コイルバネプローブPを用いたプローブユニットUの基本構成は、図3に示すように、前記垂直型コイルバネプローブPを収納するケーシングの構造が統合した一枚のガイド板500としてなら簡単になるので、プローブユニットUの組み立てすることがしやすくなる、更に製造コストがかなり安くなることである。The basic configuration of the probe unit U using the vertical coil spring probe P according to the present invention is simple if it is a single guide plate 500 in which the structure of the casing for housing the vertical coil spring probe P is integrated as shown in FIG. Therefore, it becomes easy to assemble the probe unit U, and the manufacturing cost is considerably reduced.

本発明の実施例に係る垂直コイルバネプローブの概略的断面図である。1 is a schematic cross-sectional view of a vertical coil spring probe according to an embodiment of the present invention. 同記プローブの概略的分解断面図である。It is a schematic exploded sectional view of the probe. 同記プローブを備えたプローブユニットの概略的断面図であって、同記プローブが半導体チップ又は半導体デバイスの電極に接触する前の状態を示す図である。It is a schematic sectional drawing of the probe unit provided with the said probe, Comprising: It is a figure which shows the state before the said probe contacts the electrode of a semiconductor chip or a semiconductor device. 同記プローブを備えたプローブユニットの概略的断面図であって、同記プローブが半導体チップ又は半導体デバイスの電極に接触した状態を示す図である。It is a schematic sectional drawing of the probe unit provided with the said probe, Comprising: The same probe is a figure which shows the state which contacted the electrode of the semiconductor chip or the semiconductor device.

P 垂直コイルバネプローブ
100 接触針
110 下係止径部
120 ベース部
130 案内孔
140 接触子
150 接触先端部
200 コイルバネ
210 バネ係止上端
220 バネ変形部
230 バネ係止下端
300 接続針
310 上接続部
320 上係止径部
330 バネ案内子
331 接続案内子
340 下接続部
400 被検査体半導体デバイス
410 検査パッド
500 ガイド板
510 支持筒
520 ガイド孔
600 接続基板
610 基板上パターン
620 配線プレート
630 基板下パターン
P Vertical coil spring probe 100 Contact needle 110 Lower locking diameter portion 120 Base portion 130 Guide hole 140 Contact 150 Contact tip portion 200 Coil spring 210 Spring locking upper end 220 Spring deforming portion 230 Spring locking lower end 300 Connecting needle 310 Upper connecting portion 320 Upper locking diameter portion 330 Spring guide 331 Connection guide 340 Lower connection portion 400 Device under test semiconductor device 410 Inspection pad 500 Guide plate 510 Support cylinder 520 Guide hole 600 Connection substrate 610 Substrate pattern 620 Wiring plate 630 Substrate pattern

Claims (4)

接触針と、接続針と、コイルバネとを備えており、
接触針は、下係止径部、ベース部、接触子、接触先端部及び案内孔を有するボトムプランジャーであって、
接続針は、下接続部、接続案内子、バネ案内子、上係止径部及び上接続部を有するトッププランジャーであって、
コイルバネは、バネ線材を用いて、中心軸上同じコイル内径の螺旋状を巻き回して作製されたバネ係止上端、バネ変形部又バネ係止下端を有しており、
コイルバネは、バネ案内子及び接続案内子の外周に配置され、バネ係止上端が上係止径部に当接し、バネ係止下端が下係止径部に当接し、バネ変形部がバネ案内子又接続案内子の軸状方向に圧縮可能が設けらけており、
下接続部が挿入される案内孔を備えており、下接続部の外周面は接触先端部上側とベース部下側間の案内孔の内周面に摺動自在に接触することを特徴とする垂直コイルバネプローブ。
A contact needle, a connection needle, and a coil spring;
The contact needle is a bottom plunger having a lower locking diameter portion, a base portion, a contact, a contact tip portion and a guide hole,
The connection needle is a top plunger having a lower connection portion, a connection guide, a spring guide, an upper locking diameter portion, and an upper connection portion,
The coil spring has a spring locking upper end, a spring deforming portion, or a spring locking lower end, which is produced by winding a spiral having the same coil inner diameter on the central axis using a spring wire.
The coil spring is disposed on the outer periphery of the spring guide and the connection guide, the upper end of the spring locking is in contact with the upper locking diameter, the lower end of the spring locking is in contact with the lower locking diameter, and the spring deforming part is spring guide. It is provided with compressibility in the axial direction of the child or connection guide,
A vertical hole characterized by comprising a guide hole into which the lower connection portion is inserted, and the outer peripheral surface of the lower connection portion slidably contacts the inner peripheral surface of the guide hole between the upper side of the contact tip and the lower side of the base portion. Coil spring probe.
請求項1記載の垂直コイルバネプローブにおいて、
接触針の中心軸上で接触先端部に続く軸状部分接触子により続く外径の太いベース部と、当該ベース部により続くも外径の細い下係止径部とを有しており、前記下係止径部、ベース部、接触子又接触先端部にかつ同軸同径の円筒状案内孔であることを特徴とする垂直コイルバネプローブ。
The vertical coil spring probe according to claim 1, wherein
A base portion having a large outer diameter that is continued by a shaft-shaped partial contact that follows the contact tip on the central axis of the contact needle, and a lower locking diameter portion that is continued by the base portion but has a thin outer diameter; A vertical coil spring probe characterized by a cylindrical guide hole having the same diameter and the same diameter in the lower locking diameter portion, base portion, contactor or contact tip portion.
請求項1、2記載の垂直コイルバネプローブにおいて、
接続針の中心軸上で接続案内子の下端に続く軸状部分径が太い下接続部であり、かつ、下接続部の外径が案内孔の内径より略細くであり、接続案内子の上端に続く軸状部分径の略太いバネ案内子であり、バネ案内子の上端に続く軸状部分径の太い上係止径部であり、上係止径部の上端に続く円錐状の上接続部が形成されており、この上接続部の底部直径はコイルバネの外径と略同になることを特徴とする垂直コイルバネプローブ。
The vertical coil spring probe according to claim 1 or 2,
The lower connecting part has a thick shaft-like diameter following the lower end of the connection guide on the central axis of the connecting needle, and the outer diameter of the lower connecting part is substantially smaller than the inner diameter of the guide hole, and the upper end of the connection guide Is a spring guide with a substantially thick shaft-like part diameter following the upper end of the spring guide, a thick upper locking diameter part following the upper end of the spring guide, and a conical upper connection following the upper end of the upper catching diameter part The vertical coil spring probe is characterized in that a portion is formed and the bottom diameter of the upper connection portion is substantially the same as the outer diameter of the coil spring.
請求項1、2又は3記載の垂直コイルバネプローブにおいて、
接続針のバネ案内子長さは、オーバードライブが加えられても、バネ案内子が下係止径部の上端と接触しない,且つ接続案内子長さは、オーバードライブが加えられても、下接続部が接触先端部と接触しないことように設定されていることを特徴とする垂直コイルバネプローブ。
The vertical coil spring probe according to claim 1, 2, or 3,
Even if overdrive is applied, the spring guide length of the connecting needle does not come into contact with the upper end of the lower locking diameter portion, and the length of the connection guide is low even if overdrive is applied. A vertical coil spring probe characterized in that the connection portion is set so as not to contact the contact tip portion.
JP2015127069A 2015-06-08 2015-06-08 Vertical coil spring probe Pending JP2017003551A (en)

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KR100912293B1 (en) * 2008-12-12 2009-08-17 함원환 Screw of manufacture machine to stock raising feed
CN108241078A (en) * 2017-05-18 2018-07-03 苏州韬盛电子科技有限公司 Vertrical probe clasp
CN112858884A (en) * 2021-01-14 2021-05-28 强一半导体(苏州)有限公司 MEMS probe structure for chip test under ultra-high temperature working environment
CN113447681A (en) * 2021-06-23 2021-09-28 苏州迪克微电子有限公司 Single-end spring test probe
WO2022039016A1 (en) * 2020-08-19 2022-02-24 三菱電機株式会社 Semiconductor laser module
KR102479835B1 (en) * 2022-05-06 2022-12-23 주식회사 엠제이 Working tool for inspection panel

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JP2012032162A (en) * 2010-07-28 2012-02-16 Sankei Engineering:Kk Contact probe and conductive member for contact probe

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US4321532A (en) * 1978-03-16 1982-03-23 Luna L Jack Repairable spring probe assembly
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JP2010096735A (en) * 2008-10-16 2010-04-30 Ucom:Kk Contact probe conductor
JP2012032162A (en) * 2010-07-28 2012-02-16 Sankei Engineering:Kk Contact probe and conductive member for contact probe

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100912293B1 (en) * 2008-12-12 2009-08-17 함원환 Screw of manufacture machine to stock raising feed
CN108241078A (en) * 2017-05-18 2018-07-03 苏州韬盛电子科技有限公司 Vertrical probe clasp
CN108241078B (en) * 2017-05-18 2020-06-02 苏州韬盛电子科技有限公司 Vertical probe card
WO2022039016A1 (en) * 2020-08-19 2022-02-24 三菱電機株式会社 Semiconductor laser module
JP7370473B2 (en) 2020-08-19 2023-10-27 三菱電機株式会社 semiconductor laser module
CN112858884A (en) * 2021-01-14 2021-05-28 强一半导体(苏州)有限公司 MEMS probe structure for chip test under ultra-high temperature working environment
CN112858884B (en) * 2021-01-14 2022-07-05 强一半导体(苏州)有限公司 MEMS probe structure for chip test under ultra-high temperature working environment
CN113447681A (en) * 2021-06-23 2021-09-28 苏州迪克微电子有限公司 Single-end spring test probe
KR102479835B1 (en) * 2022-05-06 2022-12-23 주식회사 엠제이 Working tool for inspection panel

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