CN112858884B - MEMS probe structure for chip test under ultra-high temperature working environment - Google Patents
MEMS probe structure for chip test under ultra-high temperature working environment Download PDFInfo
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- CN112858884B CN112858884B CN202110051010.8A CN202110051010A CN112858884B CN 112858884 B CN112858884 B CN 112858884B CN 202110051010 A CN202110051010 A CN 202110051010A CN 112858884 B CN112858884 B CN 112858884B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
- G01R1/07328—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support for testing printed circuit boards
Abstract
The invention relates to an MEMS probe structure for chip testing in an ultrahigh temperature working environment, belonging to the technical field of precision test metering, micro-electro-mechanical systems, IC chip testing and probe cards; the structure is provided with a PCB, an adapter plate and a composite probe head structure from top to bottom in sequence, the composite probe head structure comprises an upper guide plate, a middle guide plate and a lower guide plate, and a probe penetrates through the upper guide plate and the middle guide plate and then extends out of the lower guide plate; the probe comprises an upper probe arranged on the upper guide plate, a middle probe penetrating through the middle guide plate and a lower probe arranged on the lower guide plate; the upper probe and the lower probe have the characteristics of expansion with heat and contraction with cold; the middle probe has the characteristics of thermal shrinkage and cold expansion; the MEMS probe structure and the test method are used as a key technology in the MEMS probe structure and the test method for the chip test in the ultra-high temperature working environment, and are beneficial to ensuring the effective contact between the bare chip and the probe in the test process of the chip with large size or multiple test points in the ultra-high temperature working environment, thereby being beneficial to testing the chip.
Description
Technical Field
The invention discloses an MEMS probe structure for chip testing in an ultrahigh temperature working environment, and belongs to the technical field of precision testing and metering, micro-electro-mechanical systems, IC chip testing and probe cards.
Background
A probe card is a device used to test a die. The performance of the chip is tested by making electrical connections by touching probes to pads or contacts of the die and by writing test programs to the chip.
One key technique for performing testing is to require that the probes must all touch the pads or contacts of the die, which places very high demands on whether all probe tips are in the same plane. In this application, the extent to which the probe tips are in the same plane is defined as the probe flatness. For a probe card with small size and a small number of probes, the flatness of the probes is easy to control, while for a probe card with large size or a large number of probes, the flatness of the probes is difficult to control, and if the flatness of the probes is low, a part of the probes effectively contact a bare chip, and other probes cannot contact the bare chip, so that the whole contact is poor, and the chip test fails.
To solve the above problem, the pressure between the die and the probe card can be increased to bend the probe that has effectively contacted the die, so that the probe that has not contacted the die can not effectively contact. However, this will cause new technical problems, in the case of the MEMS probe card, the distance between the probe and the probe is very close, and in the case of the bent probe, the bent probe is very easy to contact with other probes, forming a short circuit of the probe, and further causing a test failure, and in a serious case, even damaging the test chip and the probe card.
For the problem of short circuit easily caused by bending of the probes, we can refer to the structure disclosed in the invention patent of application No. 201711115635.6, namely, "vertical probe card probe device", in this application, the probe device includes a guide plate combination structure, and all the probes can only be bent in the same direction by the limitation of the middle guide plate, thereby effectively avoiding the problem of short circuit between the probes.
The probe card with the guide plate combination structure can realize bare chip test work under most working conditions, however, part of the bare chip test work cannot be completed because of the following reasons: in order to make the test real and effective, it is necessary to ensure that the die test environment is consistent with the chip working environment, different chips have different working temperatures, some chips work in a high temperature environment of about 100 ℃, and some chips work in an ultra-high temperature environment of 200 ℃. For chips working in an ultra-high temperature environment, the test needs to be completed in the same temperature environment, due to the limitation of probe materials, the probes lose elasticity in the ultra-high temperature environment, if the probes are bent by structures or methods such as an intermediate guide plate, the plastic deformation of the probes cannot rebound, the test work of the bare chips cannot be completed, and the probe cards can be damaged in severe cases.
It can be seen that, by using the solution provided by the invention patent "probe apparatus of vertical probe card", although it can be applied to test most bare chips, it still cannot ensure effective contact between the bare chips and probes during the test process of large-size or multi-test point chips under the ultra-high temperature working environment.
Disclosure of Invention
In order to solve the problems, the invention discloses an MEMS probe structure for chip testing in an ultrahigh-temperature working environment, which is taken as a key technology in the MEMS probe structure and the testing method for the chip testing in the ultrahigh-temperature working environment, is favorable for ensuring effective contact between a bare chip and a probe in the testing process of a large-size or multi-test-point chip in the ultrahigh-temperature working environment, and is further favorable for testing the chip.
The purpose of the invention is realized as follows:
an MEMS probe structure for chip testing in an ultrahigh-temperature working environment is characterized in that a PCB, an adapter plate and a composite probe head structure are sequentially arranged from top to bottom, the composite probe head structure comprises an upper guide plate, a middle guide plate and a lower guide plate, and a probe extends out of the lower guide plate after passing through the upper guide plate and the middle guide plate from the adapter plate; the upper guide plate, the middle guide plate and the lower guide plate are made of insulating materials, and the probes are made of metal conducting materials;
the probes comprise upper probes arranged on the upper guide plate, middle probes penetrating through the middle guide plate and lower probes arranged on the lower guide plate;
a through groove is formed in the middle guide plate, the middle probe penetrates through the middle guide plate from the through groove, and the middle guide plate can move in a plane vertical to the probe, so that the probes can be bent in the same direction and are not short-circuited;
the thermal expansion characteristics of all parts are that the upper guide plate, the middle guide plate and the lower guide plate are between 100 ℃ and 200 ℃, and the volume change along with the temperature is less than 1/10 of the distance between two adjacent probes; the upper probe and the lower probe have the characteristics of expansion with heat and contraction with cold at the temperature of between 100 and 200 ℃; the middle probe is between 100 ℃ and 200 ℃ and has the characteristics of thermal shrinkage and cold expansion;
the bottom of the upper probe is provided with a hole, the top of the lower probe is provided with a hole, the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures, and the middle probe is in transition matching with the upper probe and the lower probe at the temperature below 100 ℃; when the temperature is changed from 100 ℃ to 200 ℃, the transition fit between the middle probe and the upper probe and the lower probe is changed into clearance fit.
According to the MEMS probe structure for chip testing in the ultrahigh-temperature working environment, the middle probe is made of an alloy material at least containing one of antimony, bismuth and gallium.
A chip testing method under a wide temperature range working environment comprises a chip testing method under a conventional temperature working environment and a chip testing method under an ultrahigh temperature working environment;
the conventional temperature working environment is a temperature range in which the working temperature is 50-150 ℃ and the probe can elastically deform, and the testing method comprises the following steps:
step a, adjusting a middle guide plate to enable the middle guide plate to be extruded to the side part of the middle probe, and enabling the probe to be bent to one side under the action of the middle guide plate;
b, contacting the probe to a pad or a contact of the bare chip;
c, pressing the probes and the bare chip with force to ensure that the probes are contacted with all pads or contacts to be detected on the bare chip under the condition that all the probes have different bending degrees;
d, writing a test program into the bare chip to finish the test;
the ultrahigh-temperature working environment is a temperature range in which the probe does not elastically deform any more than 150 ℃, and the testing method comprises the following steps:
step a, adjusting a middle guide plate to prevent the probe from bending;
b, contacting the probe to a pad or a contact of the bare chip;
c, adjusting the environment temperature to the ultrahigh-temperature working environment temperature to change the transition fit between the middle probe and the upper probe and the lower probe into clearance fit;
d, forcibly pressing the probes and the bare chip to ensure that the probes are contacted with all pads or contacts to be detected on the bare chip under the condition that all the probes are not bent;
and e, writing a test program into the bare chip to finish the test.
The multi-section MEMS probe is used for a multi-parameter detection optical-electrical-control integrated device, the multi-section MEMS probe comprises an upper probe, a middle probe and a lower probe, the bottom of the upper probe is provided with a hole, the top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
the multi-parameter detection optical-mechanical-electrical control integrated device for the multiple MEMS probes comprises: the device comprises a laser, a first pinhole, a prism, an imaging objective lens, a measured piece, a second pinhole, an image sensor, an objective table and a translation table;
the tested piece is an upper probe, a middle probe or a lower probe;
a laser beam emitted by the laser forms a point light source through the first pinhole, the light beam transmitted by the point light source is converged on the upper surface of a measured piece after sequentially passing through the prism and the imaging objective, is reflected by the measured piece, then sequentially passes through the imaging objective and the prism, is reflected to the second pinhole, and the light beam transmitted by the second pinhole is received by the image sensor and transmits image data to the computer for processing;
the laser, the first pinhole, the prism, the imaging objective lens, the second pinhole and the image sensor are borne by the translation table and can move in a horizontal plane to scan the upper surface of the measured piece;
the object stage comprises a fixed stage and a loading stage, the surface to be measured of the measured piece is subjected to reflection coating, and the upper surface of the loading stage is subjected to light absorption coating.
The multi-section MEMS probe comprises an upper probe, a middle probe and a lower probe, wherein the bottom of the upper probe is provided with a hole, the top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
the multi-parameter detection optical mechanical and electronic control integrated method for the multiple MEMS probes comprises the following steps:
step a, opening an upper reference table and a loading table:
opening the upper reference table and the loading table, wherein the lower surface of the loading table is supported by the lower bearing table, and the upper surface of the loading table and the upper reference table are positioned on the same horizontal plane;
step b, adjusting an objective table:
the center of the measured piece is positioned on the scanning line of the laser beam;
step c, scanning the tested piece:
the laser is lightened, the translation stage is moved at a constant speed, and the image sensor obtains a series of spot images f with different gray levels1(x,y),f2(x,y),...,fn(x, y), wherein (x, y) represents pixel coordinates;
step d, establishing an array:
combining each spot image and the time at which the spot image was obtained into an array as follows:
[f1(x,y),t1],[f2(x,y),t2],...,[fn(x,y),tn]
step e, image processing:
performing gray value accumulation on each image obtained by the image sensor to obtain an accumulated image, wherein the accumulated image comprises the following steps:
and arranging according to time sequence to obtain a group of gray matrixes as follows:
f, judging the type of the tested piece:
if the gray level vector f1',f2',...,fn' having two rectangular waves, the object to be measured is the upper probe or the lower probe if the gray-scale vector f1',f2',...,fn' with a rectangular wave, the measured piece is a middle probe;
step g, extracting time key parameters:
if the tested piece is an upper probe or a lower probe, extracting an accumulated image f corresponding to the left rectangular wave falling edgei' and its corresponding time tiAnd right rectangular waveCumulative image f corresponding to rising edgej' and its corresponding time tjAnd recording the time interval | t of the two accumulated imagesj-ti|；
If the detected piece is a middle probe, extracting an accumulated image f corresponding to the rising edge of the rectangular wavei' and its corresponding time tiCumulative image f corresponding to falling edgej' and its corresponding time tjAnd recording the time interval | t of the two accumulated imagesj-ti|；
Step h, calculating key size parameters:
extracting time key parameter t according to step giAnd tjObject distance of the imaging objective is l1An image distance of l2And obtaining a size key parameter d of the moving speed v of the translation table as follows:
the critical dimension parameter d is the diameter of the middle probe or the inner ring diameter of the upper probe hole or the inner ring diameter of the lower probe hole.
A probe loading object table for measuring the key size of a multi-section MEMS probe comprises an upper probe, a middle probe and a lower probe, wherein the bottom of the upper probe is provided with a hole, the top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
the probe loading object stage for measuring the key dimension of the multi-section MEMS probe comprises a fixed stage and a loading stage, wherein the fixed stage is connected with the loading stage through a rotating shaft;
the fixed platform comprises a lower bearing platform and an upper reference platform, one side surface of the lower bearing platform is wider than the upper reference platform, the upper reference platform is connected with the loading platform through a rotating shaft on the side surface, the thickness of the upper reference platform is the same as that of the loading platform, after the upper reference platform and the loading platform are folded, the upper surface of the loading platform is superposed with the upper reference platform, after the upper reference platform and the loading platform are opened, the lower surface of the loading platform is supported by the lower bearing platform, and the upper surface of the loading platform and the upper reference platform are positioned on the same horizontal plane;
the loading platform is of a frame-shaped structure, an extrusion structure is arranged on the side face of the loading platform, a vertical adjusting bracket is arranged on the other side opposite to the upper reference platform, a lifting plate is arranged at the end part of the vertical adjusting bracket, and the lifting plate can be adjusted up and down along the vertical adjusting bracket; the surface to be measured of the measured piece and the upper surface of the loading table are positioned on the same horizontal plane, and the other end surface of the measured piece is contacted with the lifting plate and is adhered to the viscous material coated on the surface of the lifting plate;
the surface to be measured of the measured piece is subjected to light reflection coating, and the upper surface of the loading table is subjected to light absorption coating.
A probe loading method for measuring the key size of a multi-section MEMS probe comprises an upper probe, a middle probe and a lower probe, wherein the bottom of the upper probe is provided with a hole, the top of the lower probe is provided with a hole, and the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures;
the probe loading method for measuring the key dimension of the multi-section MEMS probe comprises the following steps:
step a, reflecting a film on the surface to be detected of a detected piece, and absorbing a light film on the upper surface of a loading table, wherein the detected piece is an upper probe, a middle probe or a lower probe;
b, after the upper reference table and the loading table are folded, the surface to be measured of the tested piece faces downwards, and the welting edge is placed in the frame-shaped structure of the loading table;
c, adjusting the test environment temperature to normal temperature or bare core working environment temperature to enable the upper probe or the lower probe to complete thermal expansion and cold contraction or enable the middle probe to complete thermal contraction and cold expansion;
d, adjusting an extrusion structure, fixing the tested piece in a frame-shaped structure of the loading platform by using the extrusion structure, and avoiding the inaccurate parameter test of the tested piece caused by the shaking of the tested piece when the lifting plate extrudes the tested piece;
e, adjusting the lifting plate to enable the lifting plate to be extruded on the tested piece, adhering the adhesive material coated on the surface of the lifting plate to the tested piece, and fixing the lifting plate;
step f, adjusting the extrusion structure to separate the tested piece from the extrusion structure, so as to avoid the condition that the tested piece is deformed when the extrusion structure extrudes the tested piece, thereby causing inaccurate parameter test of the tested piece;
and g, opening the upper reference table and the loading table, wherein the lower surface of the loading table is supported by the lower bearing table, and the upper surface of the loading table and the upper reference table are positioned on the same horizontal plane.
Has the advantages that:
the invention discloses an MEMS probe structure for chip testing in an ultrahigh-temperature working environment, which is characterized in that a probe comprises an upper probe arranged on an upper guide plate, a middle probe penetrating through a middle guide plate and a lower probe arranged on a lower guide plate; meanwhile, the upper guide plate, the middle guide plate and the lower guide plate are arranged between 100 ℃ and 200 ℃, and the volume change along with the temperature is less than 1/10 of the distance between two adjacent probes; the upper probe and the lower probe have the characteristics of expansion with heat and contraction with cold at the temperature of between 100 and 200 ℃; the middle probe is between 100 ℃ and 200 ℃ and has the characteristics of thermal shrinkage and cold expansion; the bottom of the upper probe is provided with a hole, the top of the lower probe is provided with a hole, the middle probe is respectively inserted into the hole of the upper probe and the hole of the lower probe to form two sets of hole-shaft matching structures, and the middle probe is in transition matching with the upper probe and the lower probe at the temperature below 100 ℃; when the temperature is changed from 100 ℃ to 200 ℃, the transition fit between the middle probe and the upper probe and the lower probe is changed into clearance fit; under the condition that the structure, the expansion and contraction characteristics and the hole-shaft matching relation are lack of unity, the test work of the chip under most common temperature working environments can be realized, and the test work of the chip under the ultrahigh temperature working environment can be realized.
Secondly, the MEMS probe structure for chip testing in the ultra-high temperature working environment is characterized in that the middle probe is in transition fit with the upper probe and the lower probe at the temperature of below 100 ℃; when the temperature is changed from 100 ℃ to 200 ℃, the transition fit between the middle probe and the upper probe and the lower probe is changed into clearance fit; the special structure can automatically adjust the length of the probe under the ultra-high temperature working environment, and naturally realizes that all pads or contacts to be detected on the bare chip have probe contact.
The invention further provides a chip testing method under the wide temperature range working environment for the MEMS probe structure for chip testing under the ultrahigh temperature working environment.
Fourthly, aiming at the multi-section MEMS probe structure with an upper probe, a middle probe and a lower probe, in order to ensure that the middle probe is in transition fit with the upper probe and the lower probe at the temperature of below 100 ℃, and when the temperature of 100 ℃ is changed to 200 ℃, the middle probe is changed from transition fit to clearance fit with the upper probe and the lower probe; the detection of the key size of the probe is particularly important, however, because the structure of the probe is brand-new, the device for detecting the multi-section MEMS probe is not consulted, and aiming at the problem, the invention also provides a multi-parameter detection optical-electrical-computer-control integrated device and a method for the multi-section MEMS probe, wherein the device comprises a laser, a first pinhole, a prism, an imaging objective lens, a detected piece, a second pinhole, an image sensor, an object stage and a translation stage; the laser, the first pinhole, the prism, the imaging objective lens, the second pinhole and the image sensor are borne by the translation table and can move in a horizontal plane, so that the upper surface of a measured piece can be scanned; the object stage comprises a fixed stage and a loading stage, the surface to be measured of the measured piece is subjected to reflection coating, and the upper surface of the loading stage is subjected to light absorption coating, so that whether the measured piece is scanned or not can be clearly distinguished; the method comprises the steps of firstly opening an upper reference table and a loading table, then adjusting the loading table, then scanning a tested piece, then establishing an array, carrying out image processing, judging the type of the tested piece, finally extracting a time key parameter and calculating a size key parameter; under the multi-parameter detection optical-electrical-control integrated device and method for the multi-section MEMS probe, disclosed by the invention, the scanning detection of the key parameters of the multi-section MEMS probe can be realized only by simultaneously carrying the laser, the first pinhole, the prism, the imaging objective lens, the second pinhole and the image sensor by the translation stage to move at a constant speed.
Fifth, the present invention provides a multi-parameter detection optical-electrical-control integrated device and method for multi-section MEMS probe, the device and the method adopt the optical microscope principle, however, the key premise of the technology is that the surface to be measured has to be confocal with the second pinhole, meanwhile, under the submicron size of the MEMS element, the detection is possibly inaccurate due to the tiny deformation, therefore, the multi-section MEMS probe structure can not be directly clamped by a clamp, the requirement that the multi-section MEMS probe structure can not be directly clamped and the requirement that the multi-section MEMS probe structure can not be accurately placed brings great difficulty to the placement of the multi-section MEMS probe structure, therefore, the invention also provides a probe loading object stage for measuring the key dimension of the multi-section MEMS probe and a probe loading method for measuring the key dimension of the multi-section MEMS probe, the probe loading object stage comprises a fixed stage and a loading stage, wherein the fixed stage is connected with the loading stage through a rotating shaft; the fixed table comprises a lower bearing table and an upper reference table; the side surface of the loading platform is provided with an extrusion structure, the other side of the loading platform is relatively connected with the upper reference platform, a vertical adjusting bracket is arranged, and the end part of the vertical adjusting bracket is provided with a lifting plate; the surface to be measured of the piece to be measured and the upper surface of the loading platform are positioned on the same horizontal plane, and the other end surface of the piece to be measured contacts the lifting plate; the method comprises the steps of firstly carrying out reflective coating on a measured piece, carrying out light absorption coating on a loading platform, then after an upper reference platform and the loading platform are folded, enabling the surface to be measured of the measured piece to be downward, placing a welt edge in a frame-shaped structure of the loading platform, regulating the temperature, regulating an extrusion structure, fixing the measured piece in the frame-shaped structure of the loading platform by using the extrusion structure, then regulating a lifting plate, enabling the lifting plate to be stuck on the measured piece, separating the measured piece from the extrusion structure, and finally opening the upper reference platform and the loading platform; under the structure and the method, the surface to be detected of the probe is ensured to be confocal with the second pinhole through the upper reference platform; the upper reference table and the lifting plate are used for fixing the multiple sections of MEMS probe structures from the up-down direction, the viscous materials coated on the surface of the lifting plate are used for adhering the multiple sections of MEMS probe structures, and the adhering positions are not surfaces to be tested, so that the extrusion structure can be liberated, the multiple sections of MEMS probe structures are not clamped in the testing process, and the problem that the multiple sections of MEMS probe structures are clamped to cause elastic deformation to cause inaccurate measurement is effectively avoided.
Drawings
FIG. 1 is a schematic structural diagram of an MEMS probe for chip testing in an ultra-high temperature working environment.
FIG. 2 is a flowchart of a chip testing method under a normal temperature working environment among the chip testing methods under a wide temperature range working environment according to the present invention.
FIG. 3 is a flowchart of a method for testing a chip under an ultra-high temperature operating environment in a method for testing a chip under a wide temperature range operating environment according to the present invention.
FIG. 4 is a schematic structural diagram of the multi-parameter detection opto-electro-mechanical-control integrated device for the multi-section MEMS probe of the present invention.
FIG. 5 is a flow chart of the multi-parameter detection optical-mechanical-electrical-control integrated method for the multi-section MEMS probe of the present invention.
Fig. 6 is a schematic view of the measurement principle when the tested member is an upper probe or a lower probe in the multi-parameter detection opto-mechanical-electronic integrated method for the multi-section MEMS probe according to the present invention.
FIG. 7 is a schematic view of the measurement principle of the multi-parameter detection opto-mechanical-electronic integrated method for the multi-section MEMS probe according to the present invention, wherein the measured part is the middle probe.
FIG. 8 is a schematic structural diagram of a probe loading stage for measuring critical dimensions of a multi-section MEMS probe according to the present invention after folding an upper reference stage and the loading stage.
FIG. 9 is a schematic structural diagram of a probe loading stage for measuring critical dimensions of a multi-section MEMS probe according to the present invention after an upper reference stage and the loading stage are opened.
FIG. 10 is a flow chart of a probe loading method for measuring critical dimensions of a multi-section MEMS probe according to the present invention.
In the figure: 1 composite probe head structure, 1-1 upper guide plate, 1-2 middle guide plate, 1-3 lower guide plate, 1-4 probe, 1-4-1 upper probe, 1-4-2 middle probe, 1-4-3 lower probe, 2 adapter plate, 3PCB plate, 4-1 laser, 4-2 first pinhole, 4-3 prism, 4-4 imaging objective lens, 4-5 tested piece, 4-6 second pinhole, 4-7 image sensor, 4-8 objective table, 4-8-1 fixed table, 4-8-1 lower bearing table, 4-8-1-2 upper reference table, 4-8-2 loading table, 4-8-3 rotating shaft, 4-8-4 extrusion structure, 4-8-5 vertical adjusting support, 4-8-6 lifting plate and 4-9 translation table.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Detailed description of the invention
The following is a specific embodiment of the MEMS probe structure of the present invention for chip testing in ultra-high temperature operating environment.
The structural schematic diagram of the MEMS probe structure facing chip testing in an ultra-high temperature working environment in this embodiment is shown in fig. 1, the MEMS probe structure is sequentially provided with a PCB 3, an adapter plate 2, and a composite probe head structure 1 from top to bottom, the composite probe head structure 1 includes an upper guide plate 1-1, a middle guide plate 1-2, and a lower guide plate 1-3, and a probe 1-4 extends from the adapter plate 2, passes through the upper guide plate 1-1 and the middle guide plate 1-2, and then extends out of the lower guide plate 1-3; the upper guide plate 1-1, the middle guide plate 1-2 and the lower guide plate 1-3 are made of insulating materials, and the probes 1-4 are made of metal conducting materials;
the probes 1-4 comprise an upper probe 1-4-1 arranged on the upper guide plate 1-1, a middle probe 1-4-2 penetrating through the middle guide plate 1-2 and a lower probe 1-4-3 arranged on the lower guide plate 1-3;
a through groove is formed in the middle guide plate 1-2, the middle probe 1-4-2 penetrates through the middle guide plate 1-2 from the through groove, and the middle guide plate 1-2 can move in a plane vertical to the probe 1-4, so that the probes 1-4 can be bent in the same direction and are not short-circuited;
the thermal expansion characteristics of each part are that the upper guide plate 1-1, the middle guide plate 1-2 and the lower guide plate 1-3 are between 100 ℃ and 200 ℃, and the volume change along with the temperature is smaller than 1/10 of the distance between two adjacent probes; the upper probe 1-4-1 and the lower probe 1-4-3 have the characteristics of expansion with heat and contraction with cold at the temperature of 100-200 ℃; the middle probe 1-4-2 has the characteristics of thermal shrinkage and cold expansion at the temperature of between 100 and 200 ℃;
the bottom of the upper probe 1-4-1 is provided with a hole, the top of the lower probe 1-4-3 is provided with a hole, the middle probe 1-4-2 is respectively inserted into the hole of the upper probe 1-4-1 and the hole of the lower probe 1-4-3 to form two sets of hole-shaft matching structures, and the middle probe 1-4-2 is in transition matching with the upper probe 1-4-1 and the lower probe 1-4-3 at the temperature below 100 ℃; when the temperature is changed from 100 ℃ to 200 ℃, the transition fit between the middle probe 1-4-2 and the upper probe 1-4-1 and the lower probe 1-4-3 is changed into the clearance fit.
Detailed description of the invention
The following is a specific embodiment of the MEMS probe structure of the present invention for chip testing in ultra-high temperature operating environment.
In the MEMS probe structure for chip testing in ultra-high temperature operating environment according to this embodiment, on the basis of the first embodiment, the middle probe 1-4-2 is further limited to be made of an alloy material containing at least one metal of antimony, bismuth, or gallium. Antimony, bismuth and gallium are cold-expansion and hot-shrinkage substances and are commonly used for manufacturing alloys to reduce the influence of temperature on a precision instrument, so that the middle probe 1-4-2 is manufactured by using the antimony, bismuth and gallium, and the heat-expansion and cold-expansion characteristics can be realized.
In addition, the nickel sulfide for self-explosion of the toughened glass is also a cold-expansion and hot-shrinkage substance, and can also be used for manufacturing the middle probe 1-4-2.
Detailed description of the invention
The following is a specific embodiment of the chip testing method under the working environment of the wide temperature range of the present invention.
The method for testing a chip in a wide temperature range working environment in this embodiment is implemented on the MEMS probe structure for testing a chip in an ultra-high temperature working environment described in the first specific embodiment or the second specific embodiment, and includes a method for testing a chip in a conventional temperature working environment and a method for testing a chip in an ultra-high temperature working environment, where a flowchart of the method for testing a chip in a conventional temperature working environment is shown in fig. 2, and a flowchart of the method for testing a chip in an ultra-high temperature working environment is shown in fig. 3;
the conventional temperature working environment is a temperature range in which the working temperature is 50-150 ℃ and the probes 1-4 can elastically deform, and the testing method comprises the following steps:
step a, adjusting a middle guide plate 1-2 to enable the middle guide plate 1-2 to be extruded to the side of a middle probe 1-4-2, and enabling the probe 1-4 to be bent to one side under the action of the middle guide plate 1-2;
b, contacting the probes 1-4 to a pad or a contact of the bare chip;
c, forcibly pressing the probes 1-4 and the bare chip so that the probes 1-4 are contacted with all pads or contacts to be detected on the bare chip under the condition that all the probes 1-4 have different bending degrees;
d, writing a test program into the bare chip to finish the test;
the ultrahigh-temperature working environment is a temperature range in which the working temperature is more than 150 ℃ and the probes 1-4 do not elastically deform any more, and the testing method comprises the following steps:
step a, adjusting a middle guide plate 1-2 to ensure that a probe 1-4 is not bent;
b, contacting the probes 1-4 to a pad or a contact of the bare chip;
c, adjusting the environment temperature to the ultrahigh-temperature working environment temperature to change transition fit between the middle probe 1-4-2 and the upper probe 1-4-1 and the lower probe 1-4-3 into clearance fit;
d, forcibly pressing the probes 1-4 and the bare chip to ensure that the probes 1-4 are contacted with all pads or contacts to be detected on the bare chip under the condition that all the probes 1-4 are not bent;
and e, writing a test program into the bare core to finish the test.
Detailed description of the invention
The following is a specific implementation mode of the multi-parameter detection optical-electrical-control integrated device for the multi-section MEMS probe.
The multi-parameter detection optical-electrical-control integrated device for the multi-section MEMS probe in the embodiment is used in combination with the MEMS probe structure for chip testing in the ultra-high temperature working environment in the first specific embodiment or the second specific embodiment and the chip testing method in the wide temperature range working environment in the third specific embodiment; the multi-section MEMS probe comprises an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1-4-3, wherein a hole is formed in the bottom of the upper probe 1-4-1, a hole is formed in the top of the lower probe 1-4-3, and the middle probe 1-4-2 is respectively inserted into the hole of the upper probe 1-4-1 and the hole of the lower probe 1-4-3 to form a two-set hole-shaft matching structure, as shown in FIG. 1;
the structural schematic diagram of the multi-parameter detection optical-mechanical-electrical-control integrated device for the multiple MEMS probes is shown in FIG. 4, and the multi-parameter detection optical-mechanical-electrical-control integrated device for the multiple MEMS probes comprises: the device comprises a laser 4-1, a first pinhole 4-2, a prism 4-3, an imaging objective 4-4, a tested piece 4-5, a second pinhole 4-6, an image sensor 4-7, an objective table 4-8 and a translation table 4-9;
the tested part 4-5 is an upper probe 1-4-1, a middle probe 1-4-2 or a lower probe 1-4-3;
the laser beam emitted by the laser 4-1 passes through the first pinhole 4-2 to form a point light source, the light beam transmitted by the point light source sequentially passes through the prism 4-3 and the imaging objective 4-4, is converged on the upper surface of the measured piece 4-5, is reflected by the measured piece 4-5, sequentially passes through the imaging objective 4-4 and the prism 4-3, is reflected to the second pinhole 4-6, and the light beam transmitted by the second pinhole 4-6 is received by the image sensor 4-7 and transmits image data to the computer for processing;
the laser 4-1, the first pinhole 4-2, the prism 4-3, the imaging objective 4-4, the second pinhole 4-6 and the image sensor 4-7 are borne by a translation table 4-9 and can move in a horizontal plane to scan the upper surface of the tested piece 4-5;
the object stage 4-8 comprises a fixed stage 4-8-1 and a loading stage 4-8-2, the surface to be measured of the measured piece 4-5 is coated with a reflective coating, and the upper surface of the loading stage 4-8-2 is coated with a light absorbing coating.
It should be noted that, in fig. 4, the relationship between the object 4-5 and the stage 4-8 is only a schematic relationship, and is not a true relative position and connection relationship.
Detailed description of the invention
The following is a specific implementation mode of the multi-parameter detection optical-electrical-control integrated method for the multi-section MEMS probe.
In the multi-parameter detection optical-electrical-control integrated method for a multi-section MEMS probe in this embodiment, the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2, and a lower probe 1-4-3, a hole is formed at the bottom of the upper probe 1-4-1, a hole is formed at the top of the lower probe 1-4-3, and the middle probe 1-4-2 is respectively inserted into the hole of the upper probe 1-4-1 and the hole of the lower probe 1-4-3 to form a two-set hole-shaft matching structure, as shown in fig. 1;
the flow chart of the multi-parameter detection optical mechanical electrical control integrated method for the multiple MEMS probes is shown in FIG. 5, and the multi-parameter detection optical mechanical electrical control integrated method for the multiple MEMS probes comprises the following steps:
step a, opening an upper reference table 4-8-1-2 and a loading table 4-8-2:
opening the upper reference table 4-8-1-2 and the loading table 4-8-2, wherein the lower surface of the loading table 4-8-2 is supported by the lower bearing table 4-8-1-1, and the upper surface of the loading table 4-8-2 and the upper reference table 4-8-1-2 are positioned on the same horizontal plane;
step b, adjusting the object stage 4-8:
the center of the tested piece 4-5 is positioned on the scanning line of the laser beam;
step c, scanning the tested piece 4-5:
the laser 4-1 is lightened, the translation stage 4-9 is moved at a constant speed, and the image sensor 4-7 obtains a series of spot images f with different gray scales1(x,y),f2(x,y),...,fn(x, y), wherein (x, y) represents pixel coordinates;
step d, establishing an array:
combining each spot image and the time at which the spot image was obtained into an array as follows:
[f1(x,y),t1],[f2(x,y),t2],...,[fn(x,y),tn]
step e, image processing:
accumulating the gray value of each image obtained by the image sensor to obtain an accumulated image, wherein the accumulated image comprises the following steps:
and arranging according to time sequence to obtain a group of gray matrixes as follows:
step f, judging the type of the tested piece 4-5:
if the gray-scale vector f1',f2',...,fn' having two rectangular waves, the object 4-5 to be measured is the upper probe 1-4-1 or the lower probe 1-4-3 if the gray-scale vector f1',f2',...,fnThe tested piece 4-5 is a middle probe 1-4-2 if the tested piece has a rectangular wave;
step g, extracting time key parameters:
if the tested piece 4-5 is the upper probe 1-4-1 or the lower probe 1-4-3, extracting an accumulated image f corresponding to the left rectangular wave falling edgei' and its corresponding time tiCumulative image f corresponding to right-side rectangular wave rising edgej' and its corresponding time tjAnd recording the time interval | t of the two accumulated imagesj-ti|；
If the tested piece 4-5 is the middle probe 1-4-2, extracting the accumulated image f corresponding to the rising edge of the rectangular wavei' and its corresponding time tiCumulative image f corresponding to falling edgej' and its corresponding time tjAnd recording the time interval | t of the two accumulated imagesj-ti|；
Step h, calculating key size parameters:
extracting time key parameter t according to step giAnd tjThe imaging objective 4-4 has an object distance of l1An image distance of l2And the moving speed v of the translation table 4-9 obtains a size key parameter d as follows:
the critical dimension parameter d is the diameter of the middle probe 1-4-2, the diameter of the inner ring of the hole of the upper probe 1-4-1 or the diameter of the inner ring of the hole of the lower probe 1-4-3.
Wherein, if the tested piece 4-5 is the upper probe 1-4-1 or the lower probe 1-4-3, the schematic diagram of the measuring principle is shown in FIG. 6; if the measured piece 4-5 is the middle probe 1-4-2, the schematic diagram of the measuring principle is shown in FIG. 7;
detailed description of the invention
The following is a specific embodiment of the probe loading stage for measuring critical dimensions of a multi-section MEMS probe according to the present invention.
The probe loading stage for measuring the critical dimension of the multiple MEMS probes in this embodiment is used in combination with the multi-parameter detection optical-electrical-control integrated device for the multiple MEMS probes described in the fourth embodiment and the multi-parameter detection optical-electrical-control integrated method for the multiple MEMS probes described in the fifth embodiment; in the probe loading object table for measuring the key dimension of the multi-section MEMS probe, the multi-section MEMS probe comprises an upper probe 1-4-1, a middle probe 1-4-2 and a lower probe 1-4-3, a hole is formed in the bottom of the upper probe 1-4-1, a hole is formed in the top of the lower probe 1-4-3, the middle probe 1-4-2 is respectively inserted into the hole of the upper probe 1-4-1 and the hole of the lower probe 1-4-3 to form a two-set hole-shaft matching structure, as shown in FIG. 1;
the probe loading object table for measuring the critical dimension of the multi-section MEMS probe has the structural schematic diagrams shown in FIGS. 8 and 9, and comprises a fixed table 4-8-1 and a loading table 4-8-2, wherein the fixed table 4-8-1 and the loading table 4-8-2 are connected through a rotating shaft 4-8-3;
the fixed table 4-8-1 comprises a lower bearing table 4-8-1-1 and an upper reference table 4-8-1-2, one side surface of the lower bearing table 4-8-1-1 is wider than the upper reference table 4-8-1-2, the upper reference table 4-8-1-2 is connected with the loading table 4-8-2 through a rotating shaft 4-8-3 on the side surface, the thickness of the upper reference table 4-8-1-2 is the same as that of the loading table 4-8-2, after the upper reference table 4-8-1-2 and the loading table 4-8-2 are folded, the upper surface of the loading table 4-8-2 is superposed with the upper reference table 4-8-1-2, as shown in fig. 8, after the upper reference table 4-8-1-2 and the loading table 4-8-2 are opened, the lower surface of the loading table 4-8-2 is supported by the lower bearing table 4-8-1-1, and the upper surface of the loading table 4-8-2 and the upper reference table 4-8-1-2 are located at the same horizontal plane, as shown in fig. 9, which is an image plane of the image sensor 4-7;
the loading table 4-8-2 is of a frame-shaped structure, an extrusion structure 4-8-4 is arranged on the side face of the loading table 4-8-2, a vertical adjusting bracket 4-8-5 is arranged on the other side opposite to the upper reference table 4-8-1-2, a lifting plate 4-8-6 is arranged at the end part of the vertical adjusting bracket 4-8-5, and the lifting plate 4-8-6 can be adjusted up and down along the vertical adjusting bracket 4-8-5; the surface to be measured of the measured piece 4-5 and the upper surface of the loading platform 4-8-2 are positioned on the same horizontal plane, and the other end surface of the measured piece 4-5 is contacted with the lifting plate 4-8-6 and is adhered with the viscous material coated on the surface of the lifting plate 4-8-6;
the surface to be measured of the measured piece 4-5 is coated with a reflective coating, and the upper surface of the loading platform 4-8-2 is coated with a light absorption coating.
Detailed description of the invention
The following is a specific embodiment of the probe loading method for measuring critical dimensions of a multi-section MEMS probe according to the present invention.
In the probe loading method for measuring the critical dimension of a multi-section MEMS probe in this embodiment, the multi-section MEMS probe includes an upper probe 1-4-1, a middle probe 1-4-2, and a lower probe 1-4-3, a hole is formed in the bottom of the upper probe 1-4-1, a hole is formed in the top of the lower probe 1-4-3, and the middle probe 1-4-2 is inserted into the hole of the upper probe 1-4-1 and the hole of the lower probe 1-4-3, respectively, so as to form a two-hole-shaft fitting structure, as shown in fig. 1;
the flow chart of the probe loading method for measuring the critical dimension of the multi-section MEMS probe is shown in FIG. 10, and the probe loading method for measuring the critical dimension of the multi-section MEMS probe comprises the following steps:
step a, reflecting a film on the surface to be detected of a detected piece 4-5, and absorbing a light film on the upper surface of a loading table 4-8-2, wherein the detected piece 4-5 is an upper probe 1-4-1, a middle probe 1-4-2 or a lower probe 1-4-3;
b, after the upper reference table 4-8-1-2 and the loading table 4-8-2 are folded, the surface to be measured of the measured piece 4-5 faces downwards, and the welt edge is placed in the frame-shaped structure of the loading table 4-8-2;
c, adjusting the temperature of the test environment to the normal temperature or the temperature of the bare-core working environment, so that the upper probe 1-4-1 or the lower probe 1-4-3 completes thermal expansion and cold contraction or the middle probe 1-4-2 completes thermal contraction and cold expansion;
d, adjusting the extrusion structure 4-8-4, fixing the tested piece 4-5 in the frame-shaped structure of the loading platform 4-8-2 by using the extrusion structure 4-8-4, and avoiding the inaccurate parameter test of the tested piece 4-5 caused by the shaking of the tested piece 4-5 when the tested piece 4-5 is extruded by the lifting plate 4-8-6;
e, adjusting the lifting plate 4-8-6 to enable the lifting plate 4-8-6 to be extruded on the tested piece 4-5, sticking the viscous material coated on the surface of the lifting plate 4-8-6 on the tested piece 4-5, and fixing the lifting plate 4-8-6;
step f, adjusting the extrusion structure 4-8-4, separating the tested piece 4-5 from the extrusion structure 4-8-4, and avoiding the condition that the tested piece 4-5 deforms when the extrusion structure 4-8-4 extrudes the tested piece 4-5, so that the tested piece 4-5 parameter test is inaccurate;
and g, opening the upper reference table 4-8-1-2 and the loading table 4-8-2, wherein the lower surface of the loading table 4-8-2 is supported by the lower bearing table 4-8-1-1, and the upper surface of the loading table 4-8-2 and the upper reference table 4-8-1-2 are positioned on the same horizontal plane.
It should be noted that in the above embodiments, permutation and combination can be performed without any contradictory technical solutions, and since a person skilled in the art can exhaust the results of all permutation and combination according to the mathematical knowledge of permutation and combination learned in high-school stages, the results are not listed in this application, but it should be understood that each permutation and combination result is described in this application.
It should be noted that the above embodiments are only illustrative for the patent, and do not limit the protection scope thereof, and those skilled in the art can make modifications to the parts thereof without departing from the spirit of the patent.
Claims (2)
1. An MEMS probe structure applied to chip testing in an ultrahigh-temperature working environment is characterized in that a PCB (3), an adapter plate (2) and a composite probe head structure (1) are sequentially arranged from top to bottom, the composite probe head structure (1) comprises an upper guide plate (1-1), a middle guide plate (1-2) and a lower guide plate (1-3), and a probe (1-4) penetrates through the upper guide plate (1-1) and the middle guide plate (1-2) from the adapter plate (2) and then extends out of the lower guide plate (1-3); the upper guide plate (1-1), the middle guide plate (1-2) and the lower guide plate (1-3) are made of insulating materials, and the probes (1-4) are made of metal conducting materials;
it is characterized in that the preparation method is characterized in that,
the probes (1-4) comprise upper probes (1-4-1) arranged on the upper guide plate (1-1), middle probes (1-4-2) penetrating through the middle guide plate (1-2) and lower probes (1-4-3) arranged on the lower guide plate (1-3);
a through groove is formed in the middle guide plate (1-2), the middle probe (1-4-2) penetrates through the middle guide plate (1-2) from the through groove, the middle guide plate (1-2) can move in a plane vertical to the probe (1-4), and the probes (1-4) can be bent in the same direction and are not short-circuited;
the thermal expansion characteristics of all parts are that the upper guide plate (1-1), the middle guide plate (1-2) and the lower guide plate (1-3) are between 100 ℃ and 200 ℃, and the volume change along with the temperature is less than 1/10 of the distance between two adjacent probes; the upper probe (1-4-1) and the lower probe (1-4-3) have the characteristics of expansion with heat and contraction with cold at the temperature of 100-200 ℃; the middle probe (1-4-2) has the characteristics of thermal shrinkage and cold expansion at the temperature of between 100 and 200 ℃;
the bottom of the upper probe (1-4-1) is provided with a hole, the top of the lower probe (1-4-3) is provided with a hole, the middle probe (1-4-2) is respectively inserted into the hole of the upper probe (1-4-1) and the hole of the lower probe (1-4-3) to form a two-set hole-shaft matching structure, and the middle probe (1-4-2) is in transition matching with the upper probe (1-4-1) and the lower probe (1-4-3) at the temperature below 100 ℃; when the temperature is changed from 100 ℃ to 200 ℃, the transition fit between the middle probe (1-4-2) and the upper probe (1-4-1) and the lower probe (1-4-3) is changed into the clearance fit.
2. The MEMS probe structure applied to chip testing in the ultra-high temperature working environment according to claim 1, wherein the middle probe (1-4-2) is made of an alloy material at least containing one metal of antimony, bismuth or gallium.
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| CN112858885B (en) * | 2021-01-14 | 2021-11-30 | 强一半导体（苏州）有限公司 | Chip testing method under wide temperature range working environment |
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Address after: 2 / F, building 39, 18 Dongchang Road, Suzhou Industrial Park, 215000 Patentee after: Strong Half Conductor (Suzhou) Co.,Ltd. Address before: 2 / F, building 39, 18 Dongchang Road, Suzhou Industrial Park, 215000 Patentee before: MAXONE SEMICONDUCTOR (SUZHOU) Co.,Ltd. |