JP2016533695A - センサの全解像度における複数のタイプのデータを測定するためにアレイセンサを使用する方法 - Google Patents

センサの全解像度における複数のタイプのデータを測定するためにアレイセンサを使用する方法 Download PDF

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JP2016533695A
JP2016533695A JP2016546890A JP2016546890A JP2016533695A JP 2016533695 A JP2016533695 A JP 2016533695A JP 2016546890 A JP2016546890 A JP 2016546890A JP 2016546890 A JP2016546890 A JP 2016546890A JP 2016533695 A JP2016533695 A JP 2016533695A
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data
light
type
filter
sensor array
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ビシェイ，マグエド
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アイシークラリティー，インク．
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/48—Increasing resolution by shifting the sensor relative to the scene
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/58—Means for changing the camera field of view without moving the camera body, e.g. nutating or panning of optics or image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Human Computer Interaction (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Studio Devices (AREA)
JP2016546890A 2013-10-04 2014-10-03 センサの全解像度における複数のタイプのデータを測定するためにアレイセンサを使用する方法 Pending JP2016533695A (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201361961031P 2013-10-04 2013-10-04
US61/961,031 2013-10-04
US201361961821P 2013-10-25 2013-10-25
US61/961,821 2013-10-25
US201461925339P 2014-01-09 2014-01-09
US61/925,339 2014-01-09
US14/306,844 US8917327B1 (en) 2013-10-04 2014-06-17 Method to use array sensors to measure multiple types of data at full resolution of the sensor
US14/306,844 2014-06-17
PCT/US2014/059101 WO2015051274A1 (en) 2013-10-04 2014-10-03 A method to use array sensors to measure multiple types of data at full resolution of the sensor

Related Child Applications (1)

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JP2019023963A Division JP2019110564A (ja) 2013-10-04 2019-02-13 センサの全解像度における複数のタイプのデータを測定するためにアレイセンサを使用する方法

Publications (2)

Publication Number Publication Date
JP2016533695A true JP2016533695A (ja) 2016-10-27
JP2016533695A5 JP2016533695A5 (https=) 2019-04-04

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JP2016546890A Pending JP2016533695A (ja) 2013-10-04 2014-10-03 センサの全解像度における複数のタイプのデータを測定するためにアレイセンサを使用する方法
JP2019023963A Pending JP2019110564A (ja) 2013-10-04 2019-02-13 センサの全解像度における複数のタイプのデータを測定するためにアレイセンサを使用する方法

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Country Status (6)

Country Link
US (3) US8917327B1 (https=)
EP (1) EP3053096A4 (https=)
JP (2) JP2016533695A (https=)
KR (1) KR20160085254A (https=)
CN (1) CN105830090A (https=)
WO (1) WO2015051274A1 (https=)

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JP2021532640A (ja) * 2018-07-17 2021-11-25 ベステル エレクトロニク サナイー ベ ティカレト エー．エス． ただ二つのカメラを備える装置およびこの装置を用いて二つの画像を生成する方法
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EP3053096A4 (en) 2017-04-12
JP2019110564A (ja) 2019-07-04
WO2015051274A1 (en) 2015-04-09
US9076703B2 (en) 2015-07-07
KR20160085254A (ko) 2016-07-15
US8917327B1 (en) 2014-12-23
US20150097108A1 (en) 2015-04-09
CN105830090A (zh) 2016-08-03
EP3053096A1 (en) 2016-08-10
US20160255288A1 (en) 2016-09-01

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