JP2016530722A - マルチピクセル型アバランシェ光ダイオード - Google Patents
マルチピクセル型アバランシェ光ダイオード Download PDFInfo
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- JP2016530722A JP2016530722A JP2016533966A JP2016533966A JP2016530722A JP 2016530722 A JP2016530722 A JP 2016530722A JP 2016533966 A JP2016533966 A JP 2016533966A JP 2016533966 A JP2016533966 A JP 2016533966A JP 2016530722 A JP2016530722 A JP 2016530722A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 7
- 238000005036 potential barrier Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 abstract description 19
- 230000003321 amplification Effects 0.000 abstract description 14
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 13
- 230000004044 response Effects 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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Abstract
Description
本出願は、2013年8月13日に出願された米国特許仮出願第61/865,503号の利益を主張し、本出願はその全体がすべての目的に対して参照により本明細書に組み込まれる。
Claims (13)
- マルチピクセル型アバランシェ光ダイオードであって、
半導体層と、
前記半導体層とpn接合部を形成する複数の半導体領域と、
誘電層により前記半導体層から分離された共通導電グリッドと、
前記半導体領域を前記共通導電グリッドと連結させる個々の微小抵抗器と
を備え、
前記半導体領域の表面の一部の上で、個々のエミッタはそれぞれ前記半導体領域と電位障壁を形成することによって区別され、前記個々のエミッタは第2の個々の微小抵抗器のそれぞれを用いて追加の導電グリッドに連結されている、
マルチピクセル型アバランシェ光ダイオード。 - 前記個々のエミッタが、半導体領域と同じ材料で実行されるが、反対型の伝導性を有する、請求項1に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記個々のエミッタが、前記半導体領域に対してワイドギャップ半導体で実行される、請求項1に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記個々のエミッタが、金属材料で実行される、請求項1に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記半導体層が、半導体基板の表面上に形成される、請求項1に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記個々のエミッタが、半導体領域と同じ材料で実行されるが、反対型の伝導性を有する、請求項5に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記個々のエミッタが、前記半導体領域に対してワイドギャップ半導体で実行される、請求項5に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記個々のエミッタが、金属材料で実行される、請求項5に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記半導体層が、誘電体基板の表面上に形成される、請求項1に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記個々のエミッタが、半導体領域と同じ材料で実行されるが、反対型の伝導性を有する、請求項9に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記個々のエミッタが、前記半導体領域に対してワイドギャップ半導体で実行される、請求項9に記載のマルチピクセル型アバランシェ光ダイオード。
- 前記個々のエミッタが、金属材料で実行される、請求項9に記載のマルチピクセル型アバランシェ光ダイオード。
- マルチピクセル型アバランシェ光ダイオードであって、
半導体層と、
前記半導体層内に配置され、前記半導体層とpn接合部を画定する複数の半導体領域と、
前記半導体層および前記複数の半導体領域によって画定された表面上に配置された誘電層と、
前記誘電層上に配置され、前記誘電層により前記半導体層から分離された共通導電グリッドと、
前記誘電層を通って延在し、それぞれの半導体領域を前記共通導電グリッドと作動可能に連結させる複数の第1の微小抵抗器と、
前記誘電層を通って延在し、それぞれの半導体領域に作動可能に連結されたそれぞれのエミッタを介して、それぞれの半導体領域を第2の導電グリッドと作動可能に連結させる、複数の第2の微小抵抗器であって、前記エミッタがそれぞれの半導体領域でそれぞれの電位障壁を形成する、複数の第2の微小抵抗器と
を備える、マルチピクセル型アバランシェ光ダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361865503P | 2013-08-13 | 2013-08-13 | |
US61/865,503 | 2013-08-13 | ||
PCT/IB2014/002025 WO2015022580A2 (en) | 2013-08-13 | 2014-08-13 | Multi-pixel avalanche photodiode |
Publications (3)
Publication Number | Publication Date |
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JP2016530722A true JP2016530722A (ja) | 2016-09-29 |
JP2016530722A5 JP2016530722A5 (ja) | 2017-09-14 |
JP6239758B2 JP6239758B2 (ja) | 2017-11-29 |
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US (1) | US9252317B2 (ja) |
EP (1) | EP3055887B1 (ja) |
JP (1) | JP6239758B2 (ja) |
CN (1) | CN105765737B (ja) |
WO (1) | WO2015022580A2 (ja) |
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CN111916526A (zh) * | 2020-08-10 | 2020-11-10 | 中国电子科技集团公司第四十四研究所 | 一种负反馈型单光子雪崩光电二极管及其制作方法 |
Citations (8)
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WO2008011617A2 (en) * | 2006-07-21 | 2008-01-24 | The Regents Of The University Of California | Shallow-trench-isolation (sti)-bounded single-photon avalanche photodetectors |
US20080230862A1 (en) * | 2007-03-22 | 2008-09-25 | Ranbir Singh | Method, Apparatus, Material, and System of Using a High Gain Avalanche Photodetector Transistor |
JP2008311651A (ja) * | 2007-06-15 | 2008-12-25 | General Electric Co <Ge> | 半導体光電子増倍器の構造 |
JP2009533870A (ja) * | 2006-04-12 | 2009-09-17 | セミコア | コンピュータ断層撮影及び他の撮像用途のための背面照射式フォトトランジスタ・アレイ |
JP2011003740A (ja) * | 2009-06-18 | 2011-01-06 | Hamamatsu Photonics Kk | 光検出装置 |
US20110272561A1 (en) * | 2010-03-23 | 2011-11-10 | Stmicroelectronics S.R.L. | Method of detecting impinging position of photons on a geiger-mode avalanche photodiode, related geiger-mode avalanche photodiode and fabrication process |
WO2012057082A1 (ja) * | 2010-10-29 | 2012-05-03 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
US20130154044A1 (en) * | 2011-12-16 | 2013-06-20 | Stmicroelectronics (Grenoble 2) Sas | Single-Photon Avalanche Diode Assembly |
Family Cites Families (6)
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US3925658A (en) * | 1974-04-26 | 1975-12-09 | Mc Donnell Douglas Corp | Grid lateral photodetector with gain |
RU2102820C1 (ru) | 1996-10-10 | 1998-01-20 | Зараддин Ягуб-оглы Садыгов | Лавинный детектор |
US7592576B1 (en) * | 2007-07-02 | 2009-09-22 | National Instute Of Advanced Industrial Science And Technology | Optical sensor array, sensing method and circuit therefore, and device and apparatus thereby |
GB201004922D0 (en) | 2010-03-24 | 2010-05-12 | Sensl Technologies Ltd | Silicon photomultiplier and readout method |
IT1402264B1 (it) * | 2010-09-16 | 2013-08-28 | St Microelectronics Srl | Array fotorilevatore multi-pixel di fotodiodi a valanga geiger-mode |
CN102956739B (zh) * | 2012-10-17 | 2015-06-10 | 黄秋 | 微光电感单元及其背读式半导体光电倍增管及其组件 |
-
2014
- 2014-08-13 EP EP14835896.3A patent/EP3055887B1/en active Active
- 2014-08-13 CN CN201480056356.5A patent/CN105765737B/zh active Active
- 2014-08-13 JP JP2016533966A patent/JP6239758B2/ja not_active Expired - Fee Related
- 2014-08-13 US US14/459,136 patent/US9252317B2/en not_active Expired - Fee Related
- 2014-08-13 WO PCT/IB2014/002025 patent/WO2015022580A2/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009533870A (ja) * | 2006-04-12 | 2009-09-17 | セミコア | コンピュータ断層撮影及び他の撮像用途のための背面照射式フォトトランジスタ・アレイ |
WO2008011617A2 (en) * | 2006-07-21 | 2008-01-24 | The Regents Of The University Of California | Shallow-trench-isolation (sti)-bounded single-photon avalanche photodetectors |
US20080230862A1 (en) * | 2007-03-22 | 2008-09-25 | Ranbir Singh | Method, Apparatus, Material, and System of Using a High Gain Avalanche Photodetector Transistor |
JP2008311651A (ja) * | 2007-06-15 | 2008-12-25 | General Electric Co <Ge> | 半導体光電子増倍器の構造 |
JP2011003740A (ja) * | 2009-06-18 | 2011-01-06 | Hamamatsu Photonics Kk | 光検出装置 |
US20110272561A1 (en) * | 2010-03-23 | 2011-11-10 | Stmicroelectronics S.R.L. | Method of detecting impinging position of photons on a geiger-mode avalanche photodiode, related geiger-mode avalanche photodiode and fabrication process |
WO2012057082A1 (ja) * | 2010-10-29 | 2012-05-03 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
US20130154044A1 (en) * | 2011-12-16 | 2013-06-20 | Stmicroelectronics (Grenoble 2) Sas | Single-Photon Avalanche Diode Assembly |
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Publication number | Publication date |
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JP6239758B2 (ja) | 2017-11-29 |
US20150048472A1 (en) | 2015-02-19 |
EP3055887A2 (en) | 2016-08-17 |
CN105765737A (zh) | 2016-07-13 |
US9252317B2 (en) | 2016-02-02 |
CN105765737B (zh) | 2017-05-31 |
EP3055887A4 (en) | 2017-06-28 |
WO2015022580A2 (en) | 2015-02-19 |
EP3055887B1 (en) | 2019-05-08 |
WO2015022580A3 (en) | 2015-08-06 |
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