JP2016526786A - 複数の構造体を製造するための方法 - Google Patents
複数の構造体を製造するための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000007789 gas Substances 0.000 claims abstract description 83
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000012212 insulator Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims description 31
- 239000007924 injection Substances 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 7
- 238000000354 decomposition reaction Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004401 flow injection analysis Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
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Abstract
Description
a)複数の構造体Sを受容するのに適したチャンバー10の用意、
b)チャンバー10が非酸化性雰囲気を有するように、チャンバー10内へのガス流れF(矢印で示される)の循環、
c)絶縁体の酸化物中に存在する酸素が活性層を通して拡散し、活性層の半導体材料と反応し、揮発性物質を生成する、しきい値以上の温度での、複数の構造体Sの熱処理の工程を含む。
a)複数の構造体を受容するのに適したチャンバーの用意、
b)チャンバーが非酸化性雰囲気を有するように、チャンバー内でのガス流れの循環、
c)絶縁体の酸化物中に存在する酸素が活性層を通して拡散し、活性層の半導体材料と反応し、揮発性物質を生成する、しきい値以上の温度での、複数の構造体の熱処理の工程を含み、方法は、ガス流れが、Vdで示される、ガス流れへの揮発性物質の拡散速度より大きい、Vfで示される、複数の構造体間での循環速度を有するように、前記工程b)およびc)が実行されることにおいて注目すべきである。
複数の構造体Sを受容するのに適したチャンバー10、
チャンバー10が非酸化性雰囲気を有し得るように、チャンバー10内にガス流れFを循環させるための手段、
絶縁体の酸化物中に存在する酸素が活性層を通して拡散し、活性層の半導体材料と反応し、揮発性物質を生成する、しきい値以上の温度での複数の構造体Sの熱処理を生じさせ得る加熱手段を含む。
チャンバー10へのガス流れFの注入は、長手方向軸Z’−Zに平行に向けられ、
チャンバー10は、各構造体Sの活性層の近傍に注入されるガス流れFを案内するために配置された案内手段を備える。
a)複数の構造体Sを受容するために適したチャンバー10の用意、
b)チャンバー10が非酸化性雰囲気を有するよう、チャンバー10内でのガス流れFの循環、
c)絶縁体の酸化物中に存在する酸素が活性層を通して拡散し、活性層の半導体材料と反応し、揮発性物質を生成する、しきい値以上の温度での、複数の構造体Sの熱処理を含む。
Claims (14)
- 各々が、基板、酸化物を含む絶縁体、半導体材料を含む活性層を連続的に含む、複数の構造体(S)を製造するための方法であって、該方法は、
a)前記複数の構造体(S)を受容するために適したチャンバー(10)の用意、
b)前記チャンバー(10)が非酸化性雰囲気を有するように、前記チャンバー(10)内でのガス流れ(F)の循環、
c)前記絶縁体の前記酸化物中に存在する酸素が前記活性層を通して拡散し、前記活性層の前記半導体材料と反応し、揮発性物質を生成する、しきい値以上の温度での、前記複数の構造体(S)の熱処理の工程を含み、前記方法は、工程b)および工程c)が、ガス流れFが、Vdで表されるガス流れF中への前記揮発性物質の拡散速度より大きい、Vfで表される前記複数の構造体(S)間の循環速度を有するように実行されることを特徴とする方法。 - 請求項1の方法であって、前記工程b)および工程c)は、Vf/Vd≧100、好ましくは、Vf/Vd≧1000であるように実行されることを特徴とする方法。
- 請求項1または2の方法であって、前記工程b)は、前記ガス流れ(F)が、前記各構造体(S)の前記活性層の近傍に循環するように実行されることを特徴とする方法。
- 請求項3の方法であって、前記工程a)中に用意される前記チャンバー(10)は、長手方向軸(Z’−Z)に沿って延び、前記工程b)は、前記チャンバー10内への前記ガス流れ(F)の注入を含み、注入は、前記長手方向軸(Z’−Z)に平行に向けられ、前記工程a)は、前記各構造体(S)の活性層の近傍に注入される前記ガス流れ(F)を案内するために配置される案内手段を備える前記チャンバー(10)を用意することにある工程を含み、前記案内手段は、好ましくは、前記チャンバー(10)の周囲の周りに配置されたフィン(50)を含むことを特徴とする方法。
- 請求項3の方法であって、前記工程a)中に用意される前記チャンバー(10)は、前記長手方向軸(Z’−Z)に沿って延び、前記工程b)は、前記チャンバー(10)内への前記ガス流れ(F)の注入を含み、注入は、前記長手方向軸(Z’−Z)に平行に向けられ、前記工程a)は、前記複数の構造体(S)を支持するために配置される支持部材(40)を備える前記チャンバー(10)を用意することにある工程を含み、そして、前記支持部材(40)は、前記ガス流れ(F)が、前記各構造体(S)の前記活性層の近傍に循環するように前記長手方向軸(Z’−Z)の周りで前記チャンバー(10)に対して回転移動可能であることを特徴とする方法。
- 請求項5の方法であって、前記構造体(S)の前記支持部材(40)は、前記長手方向軸(Z’−Z)の周りを部分的に曲がる螺旋を形成し、前記構造体(S)の前記支持部材(40)の各々は、螺旋のブレードを形成することを特徴とする方法。
- 請求項3の方法であって、前記工程a)の間に用意される前記チャンバー(10)は、前記長手方向軸(Z’−Z)に沿って延び、そして、前記工程b)は、その注入が、前記長手方向軸(Z’−Z)に垂直に向けられ、前記ガス流れ(F)が前記各構造体(S)の前記活性層の近傍において循環するように、前記各構造体(S)に向けて方向づけられた、前記チャンバーへの前記ガス流れ(F)の注入を含むことを特徴とする方法。
- 請求項7の方法であって、該方法は、前記各構造体(S)の前記活性層の近傍に循環する前記ガス流れ(F)を排出する工程を含み、前記チャンバー(10)からの前記ガス流れ(F)の排出は、前記長手方向軸(Z’−Z)に直角に向けられることを特徴とする方法。
- 請求項3の方法であって、前記工程b)は、前記チャンバー(10)への前記ガス流れ(F)の注入の工程を含み、注入は、前記各構造体(S)の中心に向けられることを特徴とする方法。
- 請求項9の方法であって、前記工程a)は、前記複数の構造体(S)を支持するために配置された支持部材(40)を備えた前記チャンバー(10)を用意することからなる工程を含み、前記支持部材(40)は、前記構造体(S)の中心に注入される前記ガス流れ(F)を案内するために配置されたダクト(20)を形成することを特徴とする方法。
- 請求項1〜10のいずれか1つの方法であって、方法は、前記チャンバー(10)から前記ガス流れ(F)を排出する工程を含み、排出された前記ガス流れ(F)の一部は、前記チャンバー(10)に再注入されることを特徴とする方法。
- 請求項1〜11のいずれか1つの方法であって、前記各構造体(S)の前記活性層は、自由表面を有し、前記工程a)は、前記複数の構造体(S)を支持するために配置された支持手段を備えた前記チャンバー(10)を用意する工程を含み、前記方法は、前記各構造体(S)の活性層の自由表面に垂直な軸の周りを回転運動する前記支持手段を位置づけることを含むことを特徴とする方法。
- 請求項1〜12のいずれか1つの方法であって、前記絶縁体は二酸化ケイ素を含み、前記活性層の前記半導体材料は、ケイ素を含み、生成された前記揮発性物質は、一酸化ケイ素を含むことを含むことを特徴とする方法。
- 請求項1〜13のいずれか1つの方法であって、前記複数の構造体の熱処理は、1150℃を超える温度で、4時間以下の期間、実行されることを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1301437 | 2013-06-18 | ||
FR1301437A FR3007194B1 (fr) | 2013-06-18 | 2013-06-18 | Procede de fabrication d'une pluralite de structures |
PCT/FR2014/051406 WO2014202866A1 (fr) | 2013-06-18 | 2014-06-11 | Procédé de fabrication d'une pluralité de structures |
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EP (1) | EP3011590B1 (ja) |
JP (1) | JP2016526786A (ja) |
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CN (1) | CN105324840B (ja) |
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JP2001110736A (ja) * | 1999-10-14 | 2001-04-20 | Toshiba Ceramics Co Ltd | 縦型熱処理炉 |
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CN1224924A (zh) * | 1997-12-26 | 1999-08-04 | 佳能株式会社 | 热处理soi衬底的方法和设备及利用其制备soi衬底的方法 |
US20070137794A1 (en) * | 2003-09-24 | 2007-06-21 | Aviza Technology, Inc. | Thermal processing system with across-flow liner |
JP5211464B2 (ja) * | 2006-10-20 | 2013-06-12 | 東京エレクトロン株式会社 | 被処理体の酸化装置 |
US20100193899A1 (en) | 2007-11-23 | 2010-08-05 | S.O.I.Tec Silicon On Insulator Technologies | Precise oxide dissolution |
JP2011222677A (ja) | 2010-04-07 | 2011-11-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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2013
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JP2000031251A (ja) * | 1998-05-14 | 2000-01-28 | Asm Internatl Nv | ガス分配装置を備えたウェファ―ラック |
JP2001110736A (ja) * | 1999-10-14 | 2001-04-20 | Toshiba Ceramics Co Ltd | 縦型熱処理炉 |
JP2012015476A (ja) * | 2010-06-30 | 2012-01-19 | Samsung Mobile Display Co Ltd | 基板加工装置 |
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Also Published As
Publication number | Publication date |
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FR3007194B1 (fr) | 2015-06-12 |
FR3007194A1 (fr) | 2014-12-19 |
US9875914B2 (en) | 2018-01-23 |
WO2014202866A1 (fr) | 2014-12-24 |
CN105324840A (zh) | 2016-02-10 |
KR20210068137A (ko) | 2021-06-08 |
EP3011590B1 (fr) | 2020-07-29 |
CN105324840B (zh) | 2018-11-27 |
KR20160021785A (ko) | 2016-02-26 |
EP3011590A1 (fr) | 2016-04-27 |
US20160372342A1 (en) | 2016-12-22 |
KR102259876B1 (ko) | 2021-06-02 |
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