JP2016509749A - レーザーパルスマルチプライヤを用いた半導体検査及び計測システム - Google Patents

レーザーパルスマルチプライヤを用いた半導体検査及び計測システム Download PDF

Info

Publication number
JP2016509749A
JP2016509749A JP2015546549A JP2015546549A JP2016509749A JP 2016509749 A JP2016509749 A JP 2016509749A JP 2015546549 A JP2015546549 A JP 2015546549A JP 2015546549 A JP2015546549 A JP 2015546549A JP 2016509749 A JP2016509749 A JP 2016509749A
Authority
JP
Japan
Prior art keywords
pulse
ring cavity
beam splitter
multiplier
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015546549A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016509749A5 (enExample
Inventor
ユン−ホ アレックス チュアン
ユン−ホ アレックス チュアン
ジャスティン ダイアンフアン リオウ
ジャスティン ダイアンフアン リオウ
ジェイ ジョセフ アームストロング
ジェイ ジョセフ アームストロング
ユージン デン
ユージン デン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2016509749A publication Critical patent/JP2016509749A/ja
Publication of JP2016509749A5 publication Critical patent/JP2016509749A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G02B17/0848—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/108—Beam splitting or combining systems for sampling a portion of a beam or combining a small beam in a larger one, e.g. wherein the area ratio or power ratio of the divided beams significantly differs from unity, without spectral selectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H10P74/203—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8838—Stroboscopic illumination; synchronised illumination

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing & Machinery (AREA)
  • Lasers (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • X-Ray Techniques (AREA)
JP2015546549A 2012-12-05 2013-12-03 レーザーパルスマルチプライヤを用いた半導体検査及び計測システム Pending JP2016509749A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261733858P 2012-12-05 2012-12-05
US61/733,858 2012-12-05
US13/711,593 2012-12-11
US13/711,593 US9151940B2 (en) 2012-12-05 2012-12-11 Semiconductor inspection and metrology system using laser pulse multiplier
PCT/US2013/072774 WO2014089020A1 (en) 2012-12-05 2013-12-03 Semiconductor inspection and metrology system using laser pulse multiplier

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017220025A Division JP2018078293A (ja) 2012-12-05 2017-11-15 レーザーパルスマルチプライヤを用いた半導体検査及び計測システム

Publications (2)

Publication Number Publication Date
JP2016509749A true JP2016509749A (ja) 2016-03-31
JP2016509749A5 JP2016509749A5 (enExample) 2017-01-19

Family

ID=50825418

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2015546549A Pending JP2016509749A (ja) 2012-12-05 2013-12-03 レーザーパルスマルチプライヤを用いた半導体検査及び計測システム
JP2017220025A Pending JP2018078293A (ja) 2012-12-05 2017-11-15 レーザーパルスマルチプライヤを用いた半導体検査及び計測システム
JP2020013373A Pending JP2020102630A (ja) 2012-12-05 2020-01-30 パルスマルチプライヤ及びシステム

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2017220025A Pending JP2018078293A (ja) 2012-12-05 2017-11-15 レーザーパルスマルチプライヤを用いた半導体検査及び計測システム
JP2020013373A Pending JP2020102630A (ja) 2012-12-05 2020-01-30 パルスマルチプライヤ及びシステム

Country Status (7)

Country Link
US (2) US9151940B2 (enExample)
EP (1) EP2929558B1 (enExample)
JP (3) JP2016509749A (enExample)
KR (3) KR102165941B1 (enExample)
CN (2) CN108233154B (enExample)
TW (2) TWI600241B (enExample)
WO (1) WO2014089020A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE46672E1 (en) 2006-07-13 2018-01-16 Velodyne Lidar, Inc. High definition LiDAR system
US9793673B2 (en) 2011-06-13 2017-10-17 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US8873596B2 (en) 2011-07-22 2014-10-28 Kla-Tencor Corporation Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal
US9042006B2 (en) 2012-09-11 2015-05-26 Kla-Tencor Corporation Solid state illumination source and inspection system
US9151940B2 (en) * 2012-12-05 2015-10-06 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US8929406B2 (en) 2013-01-24 2015-01-06 Kla-Tencor Corporation 193NM laser and inspection system
US9529182B2 (en) 2013-02-13 2016-12-27 KLA—Tencor Corporation 193nm laser and inspection system
US9608399B2 (en) 2013-03-18 2017-03-28 Kla-Tencor Corporation 193 nm laser and an inspection system using a 193 nm laser
DE102013103333A1 (de) * 2013-04-03 2014-10-09 Karl Storz Gmbh & Co. Kg Kamera zur Erfassung von optischen Eigenschaften und von Raumstruktureigenschaften
US9804101B2 (en) 2014-03-20 2017-10-31 Kla-Tencor Corporation System and method for reducing the bandwidth of a laser and an inspection system and method using a laser
US9525265B2 (en) 2014-06-20 2016-12-20 Kla-Tencor Corporation Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms
US9419407B2 (en) 2014-09-25 2016-08-16 Kla-Tencor Corporation Laser assembly and inspection system using monolithic bandwidth narrowing apparatus
US9748729B2 (en) 2014-10-03 2017-08-29 Kla-Tencor Corporation 183NM laser and inspection system
US10042324B2 (en) * 2015-06-30 2018-08-07 Synaptics Incorporated Optical fingerprint imaging using holography
US10627490B2 (en) 2016-01-31 2020-04-21 Velodyne Lidar, Inc. Multiple pulse, LIDAR based 3-D imaging
DE102016203749B4 (de) * 2016-03-08 2020-02-20 Carl Zeiss Smt Gmbh Optisches System, insbesondere für die Mikroskopie
WO2017164989A1 (en) 2016-03-19 2017-09-28 Velodyne Lidar, Inc. Integrated illumination and detection for lidar based 3-d imaging
WO2017165316A1 (en) * 2016-03-21 2017-09-28 Velodyne Lidar, Inc. Lidar based 3-d imaging with varying pulse repetition
US10393877B2 (en) 2016-06-01 2019-08-27 Velodyne Lidar, Inc. Multiple pixel scanning LIDAR
US10175555B2 (en) 2017-01-03 2019-01-08 KLA—Tencor Corporation 183 nm CW laser and inspection system
JP7290571B2 (ja) 2017-03-31 2023-06-13 ベロダイン ライダー ユーエスエー，インコーポレイテッド 統合化されたｌｉｄａｒ照明出力制御
US10545222B2 (en) 2017-05-08 2020-01-28 Velodyne Lidar, Inc. LIDAR data acquisition and control
US11294041B2 (en) * 2017-12-08 2022-04-05 Velodyne Lidar Usa, Inc. Systems and methods for improving detection of a return signal in a light ranging and detection system
CN108155550B (zh) * 2017-12-19 2019-12-13 北京理工大学 一种可获得高重复频率注入锁定单频脉冲的环形振荡器
US10732130B2 (en) * 2018-06-19 2020-08-04 Kla-Tencor Corporation Embedded particle depth binning based on multiple scattering signals
US11971507B2 (en) 2018-08-24 2024-04-30 Velodyne Lidar Usa, Inc. Systems and methods for mitigating optical crosstalk in a light ranging and detection system
US10712434B2 (en) 2018-09-18 2020-07-14 Velodyne Lidar, Inc. Multi-channel LIDAR illumination driver
US11082010B2 (en) 2018-11-06 2021-08-03 Velodyne Lidar Usa, Inc. Systems and methods for TIA base current detection and compensation
US11885958B2 (en) 2019-01-07 2024-01-30 Velodyne Lidar Usa, Inc. Systems and methods for a dual axis resonant scanning mirror
US12061263B2 (en) 2019-01-07 2024-08-13 Velodyne Lidar Usa, Inc. Systems and methods for a configurable sensor system
NL2025013A (en) 2019-03-07 2020-09-11 Asml Netherlands Bv Laser system for source material conditioning in an euv light source
US10613203B1 (en) 2019-07-01 2020-04-07 Velodyne Lidar, Inc. Interference mitigation for light detection and ranging

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005148550A (ja) * 2003-11-18 2005-06-09 Gigaphoton Inc 光学的パルス伸長器および露光用放電励起ガスレーザ装置
JP2007085958A (ja) * 2005-09-26 2007-04-05 Hitachi High-Technologies Corp ウェハ欠陥検査方法および装置
JP2007511908A (ja) * 2003-11-13 2007-05-10 サイマー インコーポレイテッド レーザ出力光パルスストレッチャ
JP2009076906A (ja) * 2007-09-24 2009-04-09 Schott Ag レーザパルス長変更方法及び装置
JP2010003755A (ja) * 2008-06-18 2010-01-07 Mitsubishi Electric Corp 波長変換レーザ装置
WO2010037106A2 (en) * 2008-09-29 2010-04-01 Kla-Tencor Corporation Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements
WO2011041472A1 (en) * 2009-10-02 2011-04-07 Imra America, Inc. Optical signal processing with modelocked lasers
WO2012091786A1 (en) * 2010-12-29 2012-07-05 Cymer, Inc. Multi-pass optical apparatus

Family Cites Families (145)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755704A (en) 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
JPS58146B2 (ja) 1980-10-14 1983-01-05 浜松テレビ株式会社 フレ−ミング管
US4644221A (en) 1981-05-06 1987-02-17 The United States Of America As Represented By The Secretary Of The Army Variable sensitivity transmission mode negative electron affinity photocathode
US4718766A (en) 1985-02-05 1988-01-12 Greenstein Howard B Stabilized ring laser bias system
US4710030A (en) 1985-05-17 1987-12-01 Bw Brown University Research Foundation Optical generator and detector of stress pulses
US4853595A (en) 1987-08-31 1989-08-01 Alfano Robert R Photomultiplier tube having a transmission strip line photocathode and system for use therewith
US4999014A (en) 1989-05-04 1991-03-12 Therma-Wave, Inc. Method and apparatus for measuring thickness of thin films
US5119382A (en) 1990-12-24 1992-06-02 Mcdonnell Douglas Corporation Tetravalent chromium doped passive Q-switch
US5120949A (en) 1991-01-17 1992-06-09 Burle Technologies, Inc. Semiconductor anode photomultiplier tube
US5172382A (en) 1991-02-05 1992-12-15 Cornell Research Foundation, Inc. Ultrahigh frequency optical self-modulator
JP2828221B2 (ja) 1991-06-04 1998-11-25 インターナショナル・ビジネス・マシーンズ・コーポレイション レーザー光波長変換装置
US5189481A (en) 1991-07-26 1993-02-23 Tencor Instruments Particle detector for rough surfaces
US5144630A (en) 1991-07-29 1992-09-01 Jtt International, Inc. Multiwavelength solid state laser using frequency conversion techniques
US5563702A (en) 1991-08-22 1996-10-08 Kla Instruments Corporation Automated photomask inspection apparatus and method
US5309456A (en) * 1992-10-30 1994-05-03 The United States Of America As Represented By The United States Department Of Energy Pulse stretcher
US5276548A (en) 1992-12-01 1994-01-04 Eli Margalith Ring cavity optical parametric apparatus
US5326978A (en) 1992-12-17 1994-07-05 Intevac, Inc. Focused electron-bombarded detector
US5475227A (en) 1992-12-17 1995-12-12 Intevac, Inc. Hybrid photomultiplier tube with ion deflector
US5760809A (en) 1993-03-19 1998-06-02 Xerox Corporation Recording sheets containing phosphonium compounds
FI940740A0 (fi) 1994-02-17 1994-02-17 Arto Salokatve Detektor foer paovisning av fotoner eller partiklar, foerfarande foer framstaellning av detektorn och maetningsfoerfarande
US6271916B1 (en) 1994-03-24 2001-08-07 Kla-Tencor Corporation Process and assembly for non-destructive surface inspections
US5493176A (en) 1994-05-23 1996-02-20 Siemens Medical Systems, Inc. Photomultiplier tube with an avalanche photodiode, a flat input end and conductors which simulate the potential distribution in a photomultiplier tube having a spherical-type input end
US5608744A (en) * 1995-03-31 1997-03-04 Litton Systems, Inc. Compact laser apparatus and method
KR100483981B1 (ko) 1996-02-22 2005-11-11 가부시키가이샤 니콘 펄스폭신장광학계및이러한광학계를갖춘노광장치
JPH09288251A (ja) * 1996-02-22 1997-11-04 Nikon Corp パルス幅伸長光学系および該光学系を備えた露光装置
EP0979398B1 (en) 1996-06-04 2012-01-04 KLA-Tencor Corporation Optical scanning system for surface inspection
US5999310A (en) 1996-07-22 1999-12-07 Shafer; David Ross Ultra-broadband UV microscope imaging system with wide range zoom capability
US5742626A (en) 1996-08-14 1998-04-21 Aculight Corporation Ultraviolet solid state laser, method of using same and laser surgery apparatus
US5760899A (en) 1996-09-04 1998-06-02 Erim International, Inc. High-sensitivity multispectral sensor
US6064759A (en) 1996-11-08 2000-05-16 Buckley; B. Shawn Computer aided inspection machine
US6608676B1 (en) 1997-08-01 2003-08-19 Kla-Tencor Corporation System for detecting anomalies and/or features of a surface
US6201601B1 (en) 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
DE19814199A1 (de) * 1998-03-25 1999-10-07 Las Laser Analytical Systems G Verfahren und Vorrichtung zur abstimmbaren Frequenzkonversion
US6373869B1 (en) 1998-07-30 2002-04-16 Actinix System and method for generating coherent radiation at ultraviolet wavelengths
JP2002523905A (ja) 1998-08-20 2002-07-30 オルボテック リミテッド レーザ繰り返し率増倍器
TW447180B (en) * 1998-08-20 2001-07-21 Orbotech Ltd Pulse light pattern writer
US6067311A (en) 1998-09-04 2000-05-23 Cymer, Inc. Excimer laser with pulse multiplier
KR20000034461A (ko) 1998-11-30 2000-06-26 전주범 펄스발생장치
US6191887B1 (en) 1999-01-20 2001-02-20 Tropel Corporation Laser illumination with speckle reduction
US6184984B1 (en) 1999-02-09 2001-02-06 Kla-Tencor Corporation System for measuring polarimetric spectrum and other properties of a sample
US6233052B1 (en) 1999-03-19 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Analog detection for cavity lifetime spectroscopy
US6535531B1 (en) * 2001-11-29 2003-03-18 Cymer, Inc. Gas discharge laser with pulse multiplier
US6285018B1 (en) 1999-07-20 2001-09-04 Intevac, Inc. Electron bombarded active pixel sensor
WO2001025849A2 (en) 1999-09-23 2001-04-12 Purdue Research Foundation Direct space-to-time pulse shaper and optical pulse train generator
US6549647B1 (en) 2000-01-07 2003-04-15 Cyberoptics Corporation Inspection system with vibration resistant video capture
US6879390B1 (en) 2000-08-10 2005-04-12 Kla-Tencor Technologies Corporation Multiple beam inspection apparatus and method
US7136159B2 (en) * 2000-09-12 2006-11-14 Kla-Tencor Technologies Corporation Excimer laser inspection system
US6693930B1 (en) 2000-12-12 2004-02-17 Kla-Tencor Technologies Corporation Peak power and speckle contrast reduction for a single laser pulse
US7151632B2 (en) 2001-01-12 2006-12-19 University Of Rochester Apparatus for production of an inhomogeneously polarized optical beam for use in illumination and a method thereof
US6704339B2 (en) 2001-01-29 2004-03-09 Cymer, Inc. Lithography laser with beam delivery and beam pointing control
US6928093B2 (en) * 2002-05-07 2005-08-09 Cymer, Inc. Long delay and high TIS pulse stretcher
JP2003043533A (ja) 2001-08-03 2003-02-13 Kitakyushu Foundation For The Advancement Of Industry Science & Technology レーザーの第二高調波の方向を一定に保つための自動追尾装置
US6678046B2 (en) 2001-08-28 2004-01-13 Therma-Wave, Inc. Detector configurations for optical metrology
US20060126682A1 (en) * 2001-10-08 2006-06-15 Geola Technologies Ltd. Pulsed multiple colour laser system
US6816520B1 (en) 2001-11-30 2004-11-09 Positive Light Solid state system and method for generating ultraviolet light
US7957066B2 (en) 2003-02-21 2011-06-07 Kla-Tencor Corporation Split field inspection system using small catadioptric objectives
US7813406B1 (en) * 2003-10-15 2010-10-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Temporal laser pulse manipulation using multiple optical ring-cavities
JP2005156516A (ja) 2003-11-05 2005-06-16 Hitachi Ltd パターン欠陥検査方法及びその装置
US7023126B2 (en) 2003-12-03 2006-04-04 Itt Manufacturing Enterprises Inc. Surface structures for halo reduction in electron bombarded devices
US7321468B2 (en) * 2003-12-15 2008-01-22 Carl Zeiss Laser Optics Gmbh Method and optical arrangement for beam guiding of a light beam with beam delay
US7313155B1 (en) 2004-02-12 2007-12-25 Liyue Mu High power Q-switched laser for soft tissue ablation
US7035012B2 (en) 2004-03-01 2006-04-25 Coherent, Inc. Optical pulse duration extender
JP4365255B2 (ja) 2004-04-08 2009-11-18 浜松ホトニクス株式会社 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置
US7564888B2 (en) * 2004-05-18 2009-07-21 Cymer, Inc. High power excimer laser with a pulse stretcher
US20050286599A1 (en) * 2004-06-29 2005-12-29 Rafac Robert J Method and apparatus for gas discharge laser output light coherency reduction
JP4500641B2 (ja) 2004-09-29 2010-07-14 株式会社日立ハイテクノロジーズ 欠陥検査方法およびその装置
US7952633B2 (en) 2004-11-18 2011-05-31 Kla-Tencor Technologies Corporation Apparatus for continuous clocking of TDI sensors
US7609309B2 (en) 2004-11-18 2009-10-27 Kla-Tencor Technologies Corporation Continuous clocking of TDI sensors
US7432517B2 (en) * 2004-11-19 2008-10-07 Asml Netherlands B.V. Pulse modifier, lithographic apparatus, and device manufacturing method
JP4627185B2 (ja) 2004-12-27 2011-02-09 株式会社小松製作所 光学パルスストレッチ装置における遅延光学路長の設定方法
US7528342B2 (en) 2005-02-03 2009-05-05 Laserfacturing, Inc. Method and apparatus for via drilling and selective material removal using an ultrafast pulse laser
DE602006004913D1 (de) 2005-04-28 2009-03-12 Semiconductor Energy Lab Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung
US7345825B2 (en) 2005-06-30 2008-03-18 Kla-Tencor Technologies Corporation Beam delivery system for laser dark-field illumination in a catadioptric optical system
US7397600B2 (en) * 2005-08-09 2008-07-08 Duly Research Inc. Laser pulse multiplier
US7326948B2 (en) 2005-08-15 2008-02-05 Asml Netherlands B.V. Beam modifying device, lithographic projection apparatus, method of treating a beam, and device manufacturing method
US7535938B2 (en) 2005-08-15 2009-05-19 Pavilion Integration Corporation Low-noise monolithic microchip lasers capable of producing wavelengths ranging from IR to UV based on efficient and cost-effective frequency conversion
CN101263201B (zh) 2005-09-16 2012-10-17 松下电器产业株式会社 复合材料、及使用该材料的光学部件
JP4925085B2 (ja) 2005-09-20 2012-04-25 株式会社メガオプト 深紫外レーザー光の発生方法および深紫外レーザー装置
JP4939033B2 (ja) 2005-10-31 2012-05-23 浜松ホトニクス株式会社 光電陰極
US7885309B2 (en) * 2005-11-01 2011-02-08 Cymer, Inc. Laser system
US7715459B2 (en) 2005-11-01 2010-05-11 Cymer, Inc. Laser system
JP2007133102A (ja) 2005-11-09 2007-05-31 Canon Inc 反射防止膜を有する光学素子及びそれを有する露光装置
US7528943B2 (en) 2005-12-27 2009-05-05 Kla-Tencor Technologies Corporation Method and apparatus for simultaneous high-speed acquisition of multiple images
JP4911494B2 (ja) 2006-03-18 2012-04-04 国立大学法人大阪大学 波長変換光学素子、波長変換光学素子の製造方法、波長変換装置、紫外線レーザ照射装置およびレーザ加工装置
US7113325B1 (en) 2006-05-03 2006-09-26 Mitsubishi Materials Corporation Wavelength conversion method with improved conversion efficiency
US7545838B2 (en) 2006-06-12 2009-06-09 Coherent, Inc. Incoherent combination of laser beams
US7457330B2 (en) 2006-06-15 2008-11-25 Pavilion Integration Corporation Low speckle noise monolithic microchip RGB lasers
JP5342769B2 (ja) 2006-12-28 2013-11-13 浜松ホトニクス株式会社 光電陰極、電子管及び光電子増倍管
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8755417B1 (en) 2007-04-16 2014-06-17 Kla-Tencor Corporation Coherent light generation below about two-hundred nanometers
US20110073982A1 (en) 2007-05-25 2011-03-31 Armstrong J Joseph Inspection system using back side illuminated linear sensor
US7586108B2 (en) 2007-06-25 2009-09-08 Asml Netherlands B.V. Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector
US7620080B2 (en) 2007-08-23 2009-11-17 Corning Incorporated Laser pulse conditioning
US7715101B2 (en) 2007-09-24 2010-05-11 Asml Netherlands B.V. Electromagnetic radiation pulse duration control apparatus and method
US7999342B2 (en) 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
US7525649B1 (en) 2007-10-19 2009-04-28 Kla-Tencor Technologies Corporation Surface inspection system using laser line illumination with two dimensional imaging
US7605376B2 (en) 2007-10-29 2009-10-20 Fairchild Imaging, Inc. CMOS sensor adapted for dental x-ray imaging
KR101036879B1 (ko) 2008-08-27 2011-05-25 주식회사 이오테크닉스 드릴링 장치 및 드릴링 방법
US9080991B2 (en) 2008-09-29 2015-07-14 Kla-Tencor Corp. Illuminating a specimen for metrology or inspection
US7875948B2 (en) 2008-10-21 2011-01-25 Jaroslav Hynecek Backside illuminated image sensor
EP2204695B1 (en) 2008-12-31 2019-01-02 ASML Holding N.V. Etendue adjuster for a pulsed beam
US8624971B2 (en) 2009-01-23 2014-01-07 Kla-Tencor Corporation TDI sensor modules with localized driving and signal processing circuitry for high speed inspection
US20100301437A1 (en) 2009-06-01 2010-12-02 Kla-Tencor Corporation Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems
US9023152B2 (en) 2009-09-17 2015-05-05 Kla-Tencor Corporation CLBO crystal growth
CN102035085B (zh) 2009-10-08 2014-03-05 群康科技(深圳)有限公司 导电结构及其制造方法
US8629384B1 (en) 2009-10-26 2014-01-14 Kla-Tencor Corporation Photomultiplier tube optimized for surface inspection in the ultraviolet
DE102009047098A1 (de) * 2009-11-25 2011-05-26 Carl Zeiss Smt Gmbh Optische Anordnung zur Homogenisierung eines Laserpulses
EP2328243A1 (de) * 2009-11-26 2011-06-01 High Q Technologies GmbH Spiegelanordnung zur Führung eines Laserstrahls in einem Lasersystem und Strahlführungsverfahren für einen Laserstrahl
RU2556822C2 (ru) 2010-01-22 2015-07-20 Те Борд Оф Трастиз Оф Те Лилэнд Стэнфорд Джуниор Юниверсити Ингибирование axl сигнализации в антиметастатической терапии
JP4590578B1 (ja) 2010-04-01 2010-12-01 レーザーテック株式会社 光源装置、マスク検査装置、及びコヒーレント光発生方法
WO2012021311A2 (en) 2010-08-08 2012-02-16 Kla-Tencor Corporation Dynamic wavefront control of a frequency converted laser system
JP5568444B2 (ja) 2010-11-01 2014-08-06 株式会社日立ハイテクノロジーズ 欠陥検査方法、微弱光検出方法および微弱光検出器
SG190678A1 (en) 2010-12-16 2013-07-31 Kla Tencor Corp Wafer inspection
US8669512B2 (en) 2010-12-28 2014-03-11 Technion Research & Development Foundation Limited System and method for analyzing light by three-photon counting
US9318870B2 (en) 2011-05-06 2016-04-19 Kla-Tencor Corporation Deep ultra-violet light sources for wafer and reticle inspection systems
US9793673B2 (en) 2011-06-13 2017-10-17 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
JP5731444B2 (ja) 2011-07-07 2015-06-10 富士フイルム株式会社 放射線検出器、放射線画像撮影装置、及び放射線画像撮影システム
US9279774B2 (en) 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
ITTO20110649A1 (it) 2011-07-19 2013-01-20 St Microelectronics Srl Dispositivo di fotorivelazione con copertura protettiva e antiriflesso, e relativo metodo di fabbricazione
US8873596B2 (en) 2011-07-22 2014-10-28 Kla-Tencor Corporation Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal
US8817827B2 (en) 2011-08-17 2014-08-26 Veralas, Inc. Ultraviolet fiber laser system
US9076639B2 (en) 2011-09-07 2015-07-07 Kla-Tencor Corporation Transmissive-reflective photocathode
US8748828B2 (en) 2011-09-21 2014-06-10 Kla-Tencor Corporation Interposer based imaging sensor for high-speed image acquisition and inspection systems
US20130077086A1 (en) 2011-09-23 2013-03-28 Kla-Tencor Corporation Solid-State Laser And Inspection System Using 193nm Laser
US8872159B2 (en) 2011-09-29 2014-10-28 The United States Of America, As Represented By The Secretary Of The Navy Graphene on semiconductor detector
US9250178B2 (en) 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals
US9389166B2 (en) 2011-12-16 2016-07-12 Kla-Tencor Corporation Enhanced high-speed logarithmic photo-detector for spot scanning system
US8754972B2 (en) 2012-02-01 2014-06-17 Kla-Tencor Corporation Integrated multi-channel analog front end and digitizer for high speed imaging applications
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
US20130313440A1 (en) 2012-05-22 2013-11-28 Kla-Tencor Corporation Solid-State Laser And Inspection System Using 193nm Laser
US8953869B2 (en) 2012-06-14 2015-02-10 Kla-Tencor Corporation Apparatus and methods for inspecting extreme ultra violet reticles
US8964798B2 (en) 2012-07-12 2015-02-24 Kla-Tencor Corporation Reducing the spectral bandwidth of lasers
US9601299B2 (en) 2012-08-03 2017-03-21 Kla-Tencor Corporation Photocathode including silicon substrate with boron layer
NL2011568A (en) 2012-10-31 2014-05-06 Asml Netherlands Bv Sensor and lithographic apparatus.
US9151940B2 (en) * 2012-12-05 2015-10-06 Kla-Tencor Corporation Semiconductor inspection and metrology system using laser pulse multiplier
US9426400B2 (en) 2012-12-10 2016-08-23 Kla-Tencor Corporation Method and apparatus for high speed acquisition of moving images using pulsed illumination
US8929406B2 (en) 2013-01-24 2015-01-06 Kla-Tencor Corporation 193NM laser and inspection system
US9529182B2 (en) 2013-02-13 2016-12-27 KLA—Tencor Corporation 193nm laser and inspection system
US9478402B2 (en) 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
US11180866B2 (en) 2013-04-10 2021-11-23 Kla Corporation Passivation of nonlinear optical crystals
JP6488298B2 (ja) 2013-08-09 2019-03-20 ケーエルエー−テンカー コーポレイション 改善した検出感度のマルチスポット照明
US9347890B2 (en) 2013-12-19 2016-05-24 Kla-Tencor Corporation Low-noise sensor and an inspection system using a low-noise sensor
US9748294B2 (en) 2014-01-10 2017-08-29 Hamamatsu Photonics K.K. Anti-reflection layer for back-illuminated sensor
US9525265B2 (en) 2014-06-20 2016-12-20 Kla-Tencor Corporation Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007511908A (ja) * 2003-11-13 2007-05-10 サイマー インコーポレイテッド レーザ出力光パルスストレッチャ
JP2005148550A (ja) * 2003-11-18 2005-06-09 Gigaphoton Inc 光学的パルス伸長器および露光用放電励起ガスレーザ装置
JP2007085958A (ja) * 2005-09-26 2007-04-05 Hitachi High-Technologies Corp ウェハ欠陥検査方法および装置
JP2009076906A (ja) * 2007-09-24 2009-04-09 Schott Ag レーザパルス長変更方法及び装置
JP2010003755A (ja) * 2008-06-18 2010-01-07 Mitsubishi Electric Corp 波長変換レーザ装置
WO2010037106A2 (en) * 2008-09-29 2010-04-01 Kla-Tencor Corporation Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements
WO2011041472A1 (en) * 2009-10-02 2011-04-07 Imra America, Inc. Optical signal processing with modelocked lasers
WO2012091786A1 (en) * 2010-12-29 2012-07-05 Cymer, Inc. Multi-pass optical apparatus

Also Published As

Publication number Publication date
US9768577B2 (en) 2017-09-19
KR102411016B1 (ko) 2022-06-22
TW201739129A (zh) 2017-11-01
US9151940B2 (en) 2015-10-06
CN108233154B (zh) 2020-01-07
CN104919578B (zh) 2018-01-30
US20140153596A1 (en) 2014-06-05
TW201433030A (zh) 2014-08-16
JP2020102630A (ja) 2020-07-02
EP2929558B1 (en) 2022-09-14
KR20200118258A (ko) 2020-10-14
EP2929558A1 (en) 2015-10-14
TWI600241B (zh) 2017-09-21
JP2018078293A (ja) 2018-05-17
KR102651288B1 (ko) 2024-03-25
KR20220084448A (ko) 2022-06-21
EP2929558A4 (en) 2016-08-03
CN108233154A (zh) 2018-06-29
US20150364895A1 (en) 2015-12-17
TWI656705B (zh) 2019-04-11
KR20150091513A (ko) 2015-08-11
CN104919578A (zh) 2015-09-16
KR102165941B1 (ko) 2020-10-14
WO2014089020A1 (en) 2014-06-12

Similar Documents

Publication Publication Date Title
JP2018078293A (ja) レーザーパルスマルチプライヤを用いた半導体検査及び計測システム
JP6669923B2 (ja) 出力パルス光の生成方法
US9525265B2 (en) Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms
KR102351675B1 (ko) 모놀리식 대역폭 협소화 장치를 사용한 레이저 어셈블리 및 검사 시스템
US20050286599A1 (en) Method and apparatus for gas discharge laser output light coherency reduction

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161201

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161201

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20161201

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20170112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170512

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170718