JP2020102630A - パルスマルチプライヤ及びシステム - Google Patents
パルスマルチプライヤ及びシステム Download PDFInfo
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- JP2020102630A JP2020102630A JP2020013373A JP2020013373A JP2020102630A JP 2020102630 A JP2020102630 A JP 2020102630A JP 2020013373 A JP2020013373 A JP 2020013373A JP 2020013373 A JP2020013373 A JP 2020013373A JP 2020102630 A JP2020102630 A JP 2020102630A
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- 238000007689 inspection Methods 0.000 claims abstract description 46
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- 230000003287 optical effect Effects 0.000 claims description 46
- 238000005516 engineering process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 238000005286 illumination Methods 0.000 description 18
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- 238000012935 Averaging Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
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- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0836—Catadioptric systems using more than three curved mirrors
- G02B17/0848—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/108—Beam splitting or combining systems for sampling a portion of a beam or combining a small beam in a larger one, e.g. wherein the area ratio or power ratio of the divided beams significantly differs from unity, without spectral selectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8838—Stroboscopic illumination; synchronised illumination
Abstract
Description
[数2]
2θ1=2θB−90°+δ
2θ2=2θB−90°+δ
d1=L1*cos(δ)+d2*cos(2θ1)+d3*cos(2θ2)
d3*sin(2θ2)=d2*sin(2θ1)+L1*sin(2θ2)
Claims (3)
- 半導体の検査または計測に用いるパルスマルチプライヤであって、前記パルスマルチプライヤは、
レーザーパルスを受け取るビームスプリッターと、
前記ビームスプリッターを含むリングキャビティを形成する1つ以上のミラー及びプリズムと、
を備え、
前記ビームスプリッターは、前記レーザーパルスのエネルギーの第1の割合を前記パルスマルチプライヤの出力として向け、前記レーザーパルスのエネルギーの第2の割合を前記リングキャビティに向け、前記リングキャビティは、波長板を含んでおらず、連続する出力パルスは同一の偏光状態を有し、
前記プリズムは、レーザーパルスがブリュースター角で入射しないように回転可能に構成され、前記リングキャビティの損失を増大させて出力パルスのエネルギーを一致させ、
前記リングキャビティの光路長を前記レーザーパルスのパルス幅の約半分に等しい量だけ、前記レーザーパルス間の時間間隔の約1/2より長くして出力パルスのエンベロープが最大強度に急激に増加した後に緩慢に減衰するか、または前記レーザーパルスのパルス幅の約半分に等しい量だけ、前記レーザーパルス間の時間間隔の約1/2より短くして出力パルスのエンベロープが最大強度まで緩慢に増加した後に急激に減衰するように、実質的に規則的に繰り返すレーザーパルスのストリームの反復率を倍増する、
パルスマルチプライヤ。 - 前記1つ以上のミラーは、実質的に同じ曲率半径を有する少なくとも2つの曲面ミラーを備え、前記リングキャビティはヘリオットセル又はホワイトセルを備える、
請求項1に記載のパルスマルチプライヤ。 - 請求項1、2のいずれかに記載のパルスマルチプライヤを含むシステムであって、
前記システムは、パターン化されていないウェーハ検査システム、パターン化されたウェーハ検査システム、マスク検査システム、及び計測システムの1つを実行し、
前記システムは、データの2つの画像又はチャンネルを同時に検出するように構成された検出器を更に備える、
システム。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261733858P | 2012-12-05 | 2012-12-05 | |
US61/733,858 | 2012-12-05 | ||
US13/711,593 US9151940B2 (en) | 2012-12-05 | 2012-12-11 | Semiconductor inspection and metrology system using laser pulse multiplier |
US13/711,593 | 2012-12-11 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017220025A Division JP2018078293A (ja) | 2012-12-05 | 2017-11-15 | レーザーパルスマルチプライヤを用いた半導体検査及び計測システム |
Publications (1)
Publication Number | Publication Date |
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JP2020102630A true JP2020102630A (ja) | 2020-07-02 |
Family
ID=50825418
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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JP2015546549A Pending JP2016509749A (ja) | 2012-12-05 | 2013-12-03 | レーザーパルスマルチプライヤを用いた半導体検査及び計測システム |
JP2017220025A Pending JP2018078293A (ja) | 2012-12-05 | 2017-11-15 | レーザーパルスマルチプライヤを用いた半導体検査及び計測システム |
JP2020013373A Pending JP2020102630A (ja) | 2012-12-05 | 2020-01-30 | パルスマルチプライヤ及びシステム |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
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JP2015546549A Pending JP2016509749A (ja) | 2012-12-05 | 2013-12-03 | レーザーパルスマルチプライヤを用いた半導体検査及び計測システム |
JP2017220025A Pending JP2018078293A (ja) | 2012-12-05 | 2017-11-15 | レーザーパルスマルチプライヤを用いた半導体検査及び計測システム |
Country Status (7)
Country | Link |
---|---|
US (2) | US9151940B2 (ja) |
EP (1) | EP2929558B1 (ja) |
JP (3) | JP2016509749A (ja) |
KR (3) | KR102651288B1 (ja) |
CN (2) | CN104919578B (ja) |
TW (2) | TWI656705B (ja) |
WO (1) | WO2014089020A1 (ja) |
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