JP2016506067A - 熱処理方法及び装置 - Google Patents

熱処理方法及び装置 Download PDF

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Publication number
JP2016506067A
JP2016506067A JP2015545109A JP2015545109A JP2016506067A JP 2016506067 A JP2016506067 A JP 2016506067A JP 2015545109 A JP2015545109 A JP 2015545109A JP 2015545109 A JP2015545109 A JP 2015545109A JP 2016506067 A JP2016506067 A JP 2016506067A
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JP
Japan
Prior art keywords
radiant energy
fluence
energy source
radiation
pulse
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Pending
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JP2015545109A
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English (en)
Japanese (ja)
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JP2016506067A5 (enExample
Inventor
ブルース イー． アダムス，
ブルース イー． アダムス，
スティーヴン モファット，
スティーヴン モファット，
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2016506067A publication Critical patent/JP2016506067A/ja
Publication of JP2016506067A5 publication Critical patent/JP2016506067A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Recrystallisation Techniques (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
JP2015545109A 2012-11-28 2013-11-21 熱処理方法及び装置 Pending JP2016506067A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261730924P 2012-11-28 2012-11-28
US61/730,924 2012-11-28
PCT/US2013/071312 WO2014085201A1 (en) 2012-11-28 2013-11-21 Thermal treatment methods and apparatus

Publications (2)

Publication Number Publication Date
JP2016506067A true JP2016506067A (ja) 2016-02-25
JP2016506067A5 JP2016506067A5 (enExample) 2017-01-12

Family

ID=50773664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015545109A Pending JP2016506067A (ja) 2012-11-28 2013-11-21 熱処理方法及び装置

Country Status (5)

Country Link
US (1) US20140148017A1 (enExample)
JP (1) JP2016506067A (enExample)
KR (1) KR20150088875A (enExample)
TW (1) TWI614346B (enExample)
WO (1) WO2014085201A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9830409B2 (en) * 2012-04-10 2017-11-28 The Penn State Research Foundation Electromagnetic band gap structure and method for enhancing the functionality of electromagnetic band gap structures
KR20200075531A (ko) * 2018-12-18 2020-06-26 삼성전자주식회사 기판 처리 장치
JP2024006279A (ja) * 2022-07-01 2024-01-17 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04124813A (ja) * 1990-09-17 1992-04-24 Hitachi Ltd 薄膜半導体の製造方法及びその装置
JP2001126987A (ja) * 1999-10-29 2001-05-11 Fujitsu Ltd 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2002064060A (ja) * 2000-08-22 2002-02-28 Matsushita Electric Ind Co Ltd 非結晶薄膜のレーザーアニール方法とその装置
JP2002270505A (ja) * 2001-03-09 2002-09-20 Sumitomo Heavy Ind Ltd レーザアニール装置及び方法
US20090032511A1 (en) * 2007-07-31 2009-02-05 Adams Bruce E Apparatus and method of improving beam shaping and beam homogenization

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226790A (ja) * 1992-02-18 1993-09-03 Hitachi Ltd レーザアニール装置
JP4397571B2 (ja) * 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
TWI289896B (en) * 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US7521651B2 (en) * 2003-09-12 2009-04-21 Orbotech Ltd Multiple beam micro-machining system and method
US7569463B2 (en) * 2006-03-08 2009-08-04 Applied Materials, Inc. Method of thermal processing structures formed on a substrate
JP2010212478A (ja) * 2009-03-11 2010-09-24 Panasonic Corp レーザ加工方法およびレーザ加工装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04124813A (ja) * 1990-09-17 1992-04-24 Hitachi Ltd 薄膜半導体の製造方法及びその装置
JP2001126987A (ja) * 1999-10-29 2001-05-11 Fujitsu Ltd 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2002064060A (ja) * 2000-08-22 2002-02-28 Matsushita Electric Ind Co Ltd 非結晶薄膜のレーザーアニール方法とその装置
JP2002270505A (ja) * 2001-03-09 2002-09-20 Sumitomo Heavy Ind Ltd レーザアニール装置及び方法
US20090032511A1 (en) * 2007-07-31 2009-02-05 Adams Bruce E Apparatus and method of improving beam shaping and beam homogenization

Also Published As

Publication number Publication date
WO2014085201A1 (en) 2014-06-05
US20140148017A1 (en) 2014-05-29
TWI614346B (zh) 2018-02-11
TW201430139A (zh) 2014-08-01
KR20150088875A (ko) 2015-08-03

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