JP2016506067A - 熱処理方法及び装置 - Google Patents

熱処理方法及び装置 Download PDF

Info

Publication number
JP2016506067A
JP2016506067A JP2015545109A JP2015545109A JP2016506067A JP 2016506067 A JP2016506067 A JP 2016506067A JP 2015545109 A JP2015545109 A JP 2015545109A JP 2015545109 A JP2015545109 A JP 2015545109A JP 2016506067 A JP2016506067 A JP 2016506067A
Authority
JP
Japan
Prior art keywords
radiant energy
fluence
energy source
radiation
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015545109A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016506067A5 (enExample
Inventor
ブルース イー． アダムス，
ブルース イー． アダムス，
スティーヴン モファット，
スティーヴン モファット，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2016506067A publication Critical patent/JP2016506067A/ja
Publication of JP2016506067A5 publication Critical patent/JP2016506067A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
JP2015545109A 2012-11-28 2013-11-21 熱処理方法及び装置 Pending JP2016506067A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261730924P 2012-11-28 2012-11-28
US61/730,924 2012-11-28
PCT/US2013/071312 WO2014085201A1 (en) 2012-11-28 2013-11-21 Thermal treatment methods and apparatus

Publications (2)

Publication Number Publication Date
JP2016506067A true JP2016506067A (ja) 2016-02-25
JP2016506067A5 JP2016506067A5 (enExample) 2017-01-12

Family

ID=50773664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015545109A Pending JP2016506067A (ja) 2012-11-28 2013-11-21 熱処理方法及び装置

Country Status (5)

Country Link
US (1) US20140148017A1 (enExample)
JP (1) JP2016506067A (enExample)
KR (1) KR20150088875A (enExample)
TW (1) TWI614346B (enExample)
WO (1) WO2014085201A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9830409B2 (en) * 2012-04-10 2017-11-28 The Penn State Research Foundation Electromagnetic band gap structure and method for enhancing the functionality of electromagnetic band gap structures
KR20200075531A (ko) * 2018-12-18 2020-06-26 삼성전자주식회사 기판 처리 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04124813A (ja) * 1990-09-17 1992-04-24 Hitachi Ltd 薄膜半導体の製造方法及びその装置
JP2001126987A (ja) * 1999-10-29 2001-05-11 Fujitsu Ltd 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2002064060A (ja) * 2000-08-22 2002-02-28 Matsushita Electric Ind Co Ltd 非結晶薄膜のレーザーアニール方法とその装置
JP2002270505A (ja) * 2001-03-09 2002-09-20 Sumitomo Heavy Ind Ltd レーザアニール装置及び方法
US20090032511A1 (en) * 2007-07-31 2009-02-05 Adams Bruce E Apparatus and method of improving beam shaping and beam homogenization

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226790A (ja) * 1992-02-18 1993-09-03 Hitachi Ltd レーザアニール装置
JP4397571B2 (ja) * 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
TWI289896B (en) * 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US7521651B2 (en) * 2003-09-12 2009-04-21 Orbotech Ltd Multiple beam micro-machining system and method
US7569463B2 (en) * 2006-03-08 2009-08-04 Applied Materials, Inc. Method of thermal processing structures formed on a substrate
JP2010212478A (ja) * 2009-03-11 2010-09-24 Panasonic Corp レーザ加工方法およびレーザ加工装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04124813A (ja) * 1990-09-17 1992-04-24 Hitachi Ltd 薄膜半導体の製造方法及びその装置
JP2001126987A (ja) * 1999-10-29 2001-05-11 Fujitsu Ltd 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2002064060A (ja) * 2000-08-22 2002-02-28 Matsushita Electric Ind Co Ltd 非結晶薄膜のレーザーアニール方法とその装置
JP2002270505A (ja) * 2001-03-09 2002-09-20 Sumitomo Heavy Ind Ltd レーザアニール装置及び方法
US20090032511A1 (en) * 2007-07-31 2009-02-05 Adams Bruce E Apparatus and method of improving beam shaping and beam homogenization

Also Published As

Publication number Publication date
WO2014085201A1 (en) 2014-06-05
TWI614346B (zh) 2018-02-11
KR20150088875A (ko) 2015-08-03
US20140148017A1 (en) 2014-05-29
TW201430139A (zh) 2014-08-01

Similar Documents

Publication Publication Date Title
KR101176696B1 (ko) 펄스 트레인 어닐링 방법 및 장치
KR101115174B1 (ko) 이중 파장 열적 흐름 레이저 어닐
US7674999B2 (en) Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
CN107123597B (zh) 脉冲序列退火方法和设备
JP5611212B2 (ja) 基板のアニールにおける熱量の管理
JP2012231158A (ja) 低濃度ドープシリコン基板のレーザー熱アニール
CN104051244A (zh) 脉冲线束
JP2011204912A (ja) レーザアニール処理体の製造方法およびレーザアニール装置
JP2016506067A (ja) 熱処理方法及び装置
US9214346B2 (en) Apparatus and method to reduce particles in advanced anneal process
CN106663629A (zh) 扫描脉冲退火装置及方法
JP2012156390A (ja) レーザアニール方法及びレーザアニール装置
KR102557669B1 (ko) 이중 파장 어닐링 방법 및 장치
JP2014195004A (ja) 半導体素子の製造方法及び半導体素子の製造装置
JP2015115401A (ja) レーザアニール方法およびレーザアニール装置
JP2004152888A (ja) 半導体装置の製造方法及びレーザアニーリング装置
JP2008306211A (ja) 半導体装置の製造方法及びレーザアニーリング装置
US20170148726A1 (en) Semiconductor processing method and semiconductor device
JP2008306210A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161121

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170720

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170725

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20171024

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20171222

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180320