JP2016503967A - トランジスタアレイ及びその製造方法 - Google Patents
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- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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Abstract
Description
基板と、当該基板を共用する若干のトランジスタユニットとを含み、
前記トランジスタユニットは、
前記基板に位置する下電極及び下電極の引き出し線と、
前記下電極上に位置する圧電材料である圧電体と、
前記圧電体上に位置する上電極と、を含むトランジスタアレイを提供する。
基板を準備するステップと、
前記基板上に、複数の下電極を含む下電極のアレイと、下電極の引き出し線を形成するステップと、
複数の圧電体が圧電体のアレイを構成するように、前記下電極上に前記圧電体を形成するステップと、
複数の上電極が上電極のアレイを構成するように、前記圧電体上に前記上電極を形成するステップと、を含むトランジスタアレイの製造方法を提供する。
<実施例1>
<実施例2>
<実施例3>
Claims (19)
- 基板と、当該基板を共用する若干のトランジスタユニットとを含み、
前記トランジスタユニットは、
前記基板上に位置する下電極及び下電極の引き出し線と、
前記下電極上に位置する圧電材料である圧電体と、
前記圧電体上に位置する上電極と、を含む、
ことを特徴とするトランジスタアレイ。 - 前記トランジスタユニットにおける前記圧電体は、分極配向を有する、
ことを特徴とする請求項1に記載のトランジスタアレイ。 - 前記トランジスタユニットにおける前記圧電体の前記分極配向は、前記基板にほぼ垂直である、
ことを特徴とする請求項2に記載のトランジスタアレイ。 - 前記トランジスタアレイにおいて、各前記トランジスタユニットにおける前記圧電体の前記分極方向は、ほぼ同じである、
ことを特徴とする請求項2又は3に記載のトランジスタアレイ。 - 前記トランジスタアレイにおける前記トランジスタユニット間に、フレキシブル絶縁充填層が更に含まれ、
前記フレキシブル絶縁充填層の上面は、少なくとも、前記トランジスタユニットの上電極を露出させる、
ことを特徴とする請求項1乃至4のいずれか一項に記載のトランジスタアレイ。 - 前記トランジスタユニットは、前記上電極を前記トランジスタアレイから引き出すための上電極の引き出し線を更に含む、
ことを特徴とする請求項5に記載のトランジスタアレイ。 - 前記トランジスタアレイは、前記フレキシブル絶縁充填層上に位置し、前記トランジスタユニットのうち、前記フレキシブル絶縁充填層の上面から露出される部分を封止するための封止層を、更に含む、
ことを特徴とする請求項6に記載のトランジスタアレイ。 - 前記トランジスタユニットにおける前記圧電体は、ZnO、GaN、CdS、InN、InGaN、CdTe、CdSe、ZnSn03、チタン酸ジルコン酸鉛のナノワイヤ、ナノロッドやフィルム、又はポリフッ化ビニリデンのナノファイバーである、
ことを特徴とする請求項1乃至7のいずれか一項に記載のトランジスタアレイ。 - 前記圧電体は、ナノワイヤ、ナノロッド又はナノファイバーであり、
前記圧電体の軸線方向は、前記下電極又は前記基板の表面にほぼ垂直である、
ことを特徴とする請求項8に記載のトランジスタアレイ。 - 前記トランジスタユニットの横断面積は、25μm2又はこれより小さい、
ことを特徴とする請求項1乃至9のいずれか一項に記載のトランジスタアレイ。 - 前記トランジスタユニット間の距離は、数μm〜数mmである、
ことを特徴とする請求項1乃至10のいずれか一項に記載のトランジスタアレイ。 - 前記トランジスタユニットは、軸線が前記基板にほぼ垂直である円柱、四角柱、六角柱又は不規則の角柱形状である、
ことを特徴とする請求項1乃至11のいずれか一項に記載のトランジスタアレイ。 - 各前記トランジスタユニットにおける前記圧電体は、同じ圧電材料で構成される、
ことを特徴とする請求項1乃至12のいずれか一項に記載のトランジスタアレイ。 - 若干の同様な前記トランジスタユニットを含む、
ことを特徴とする請求項1乃至13のいずれか一項に記載のトランジスタアレイ。 - 前記基板は、軟性基板又は硬性基板である、
ことを特徴とする請求項1乃至14のいずれか一項に記載のトランジスタアレイ。 - 前記トランジスタユニットにおける前記上電極及び/又は前記下電極は、
導電酸化物、グラフェン又は銀ナノワイヤのコーティングから選択される1種を使用し、又は、
金、銀、ブラチナ、アルミニウム、ニッケル、銅、チタン、クロム、セレン又はこれらの合金から選択される1種を使用する、
ことを特徴とする請求項1乃至15のいずれか一項に記載のトランジスタアレイ。 - 基板を準備するステップと、
前記基板上に、複数の下電極を含む下電極のアレイと、下電極の引き出し線を形成するステップと、
複数の圧電体が圧電体のアレイを構成するように、前記下電極上に前記圧電体を形成するステップと、
複数の上電極が上電極のアレイを構成するように、前記圧電体上に前記上電極を形成するステップと、を含む、
ことを特徴とするトランジスタアレイの製造方法。 - 前記下電極上に圧電体を形成するステップの後に、
前記圧電体の頂部がフレキシブル絶縁充填層から露出するように、前記圧電体間に前記フレキシブル絶縁充填層を形成するステップを更に含む、
ことを特徴とする請求項17に記載のトランジスタアレイの製造方法。 - 前記圧電体上に前記上電極を形成するステップにおいて、
前記上電極が前記圧電体上に形成され、前記上電極の引き出し線が前記上電極に電気的に接続されるように、前記圧電体及び前記フレキシブル絶縁充填層上に、前記上電極及び前記上電極の引き出し線を形成する、
ことであることを特徴とする請求項18に記載のトランジスタアレイの製造方法。
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CN201310011220.X | 2013-01-11 | ||
CN201310011220.XA CN103779272B (zh) | 2013-01-11 | 2013-01-11 | 晶体管阵列及其制备方法 |
PCT/CN2013/089184 WO2014108012A1 (zh) | 2013-01-11 | 2013-12-12 | 晶体管阵列及其制备方法 |
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JP6268189B2 JP6268189B2 (ja) | 2018-01-24 |
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JP (1) | JP6268189B2 (ja) |
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US20150357374A1 (en) | 2015-12-10 |
EP2945200B1 (en) | 2019-02-27 |
CN103779272A (zh) | 2014-05-07 |
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JP6268189B2 (ja) | 2018-01-24 |
KR20150110590A (ko) | 2015-10-02 |
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