JP2016220416A - Semiconductor electric power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor electric power conversion device having a small and stable structure capable of efficiently cooling a transformer and a semiconductor unit while increasing the capacity and the voltage.SOLUTION: A semiconductor electric power conversion device 1 includes: a first route in which the cooling air flows in a semiconductor unit 7 while cooling the same into a transformer storage 12 via opening 9a for cooling fin and an opening 9b for electrolytic capacitor, and is exhausted by an exhaust fan 4 after cooling the outer side of the transformer 8; and a second route that the cooling air flows into an air channel 15 from an opening 9c for a transformer primary wiring via front side opening 10c and is exhausted by the exhaust fan 4 after cooling the inside of the transformer 8.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a semiconductor power conversion device that houses a transformer and a semiconductor unit in a housing.

  A prior art of a semiconductor power conversion device having a cooling function is disclosed in, for example, Japanese Patent Application Laid-Open No. 2007-74865. This prior art will be described with reference to the drawings. 6A and 6B show a semiconductor power conversion device based on the description in Patent Document 1. FIG. 6A is an internal structure diagram viewed from the left side, and FIG. 6B is an internal structure diagram viewed from the front. The power conversion apparatus 100 includes a casing 101, a transformer 102, a semiconductor unit 103, a control / output panel 104, and an exhaust fan 105.

  As shown in FIG. 6B, the control / output board 104 is arranged on the right side inside the housing 101 when viewed from the front. Further, as shown in FIGS. 6A and 6B, a partition plate 101a laid on the middle left side of the housing 101 divides the remaining internal space up and down so that the lower space 101b and the upper space 101c are separated. Form. The transformer 102 is arranged in the lower space 101b. In addition, two rows and three stages of semiconductor units 103 are arranged in the upper space 101c as viewed from the front of FIG. 6B.

  An air guide port 101d is formed on the back side of the partition plate 101a. A lower wind tunnel 101e which is a part of the lower space 101b and is a space on the back side of the transformer 102, and an upper wind tunnel 101f which is a part of the upper space 101c and is a space on the back side of the semiconductor unit 103. Are communicated by the air guide port 101d. A door portion (not shown) is formed on the front surface of the housing 101, and an air inlet (not shown) is formed on the door portion.

  As for cooling of the transformer 102, cooling air is taken in from an intake port on the front surface of the door (not shown), and the cooling air flows in the direction of the arrow indicated by the one-dot chain line in FIG. The cooling air flows along the surface of the transformer 102, cools the transformer 102, and flows to the lower wind tunnel 101e. The warmed air in the lower wind tunnel 101e flows to the upper wind tunnel 101f through the air guide port 101d.

  As for cooling of the semiconductor unit 103, cooling air is taken from an air inlet on the front surface of the door (not shown), and the cooling air flows as indicated by an arrow indicated by a broken line in FIG. The cooling air passes through the cooling fin portion 103a disposed at the lower part of the semiconductor unit 103, cools the inside of the semiconductor unit 103, and flows to the upper wind tunnel 101f. The warmed air in the upper wind tunnel 101f is exhausted by the exhaust fan 105 and exhausted.

JP 2007-74865 A (paragraph numbers [0006] to [0009], FIGS. 1 and 2)

  It has been found that when the voltage and capacity of the semiconductor power conversion device of the prior art are increased, the following problems (1) to (3) are newly generated.

(1) Increasing the size of the semiconductor power converter When the voltage and capacity of the semiconductor power converter 100 are increased, the transformer 102 and the semiconductor unit 103 are also increased in size. In the semiconductor power conversion device 100, since the transformer 102 and the semiconductor unit 103 are arranged one above the other, the height of the casing 101 increases, and the semiconductor power conversion device 100 cannot be installed mechanically and stably. Is expected to occur. In addition, it is expected that a problem that it cannot be installed in a machine room or the like due to an increase in height dimension. Even when the voltage and capacity of the semiconductor power conversion device are increased, attention has not been paid to the problem of aiming for a small structure that can stably install the semiconductor power conversion device.

(2) Increasing the size of the exhaust fan When increasing the voltage and capacity of the semiconductor power conversion device 100, it is necessary to increase the capacity of the exhaust fan 105 in order to enhance the cooling function. However, since the shape of the exhaust fan 105 is increased in this case, another problem that it cannot be stably installed on the housing 101 is expected. Even when the capacity of the exhaust fan is increased, attention has not been paid to the problem of aiming for a small structure that can stably install the semiconductor power conversion device.

(3) Difficulties in exhaust heat In the semiconductor power conversion device 100, the cross-sectional area of the ventilation passage 101d for exhaust heat is small due to space limitations, and the ability to actively cool the transformer 102 is low. . When the loss increases due to the increase in size of the transformer 102, the temperatures in the lower wind tunnel 101e and the upper wind tunnel 101f in particular increase, and efficient cooling becomes difficult. If efficient cooling is possible, the capacity of the exhaust fan can be reduced. Even when the voltage and capacity of such a semiconductor power conversion device are increased, attention has not been paid to the problem of aiming at a structure that efficiently cools the transformer and the semiconductor unit to suppress the temperature rise.

  Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to adopt a small and stable structure for efficiently cooling a transformer and a semiconductor unit, and to increase the capacity and voltage. The object is to provide a power converter.

The present invention for solving the above problems
A housing having an internal space for accommodating the transformer and the semiconductor unit;
A partition part for partitioning the front and rear in the internal space so as to form a semiconductor unit storage chamber for storing the semiconductor unit on the front side and a transformer storage chamber for storing the transformer on the back side;
A partition portion disposed below the transformer storage chamber, accommodating a part of the lower side of the transformer, and forming a wind tunnel communicating with the inside of the transformer;
A front side opening formed in the partition;
An upper opening formed in the partition for communicating the semiconductor unit storage chamber and the transformer storage chamber;
A lower opening that is formed in the partition so as to face the front opening of the partition wall and communicates the semiconductor unit storage chamber and the wind tunnel;
An exhaust fan installed on the upper side of the casing and exhausting from the upper side of the transformer storage chamber;
The cooling air taken into the semiconductor unit storage chamber flows divided into a first route and a second route,
In the first route, it flows while passing through a flow path formed inside the semiconductor unit, flows through the upper opening, flows from the semiconductor unit storage chamber to the transformer storage chamber, After the outside is cooled, the exhaust fan exhausts the transformer storage room,
In the second route, it flows to the wind tunnel through the semiconductor unit storage chamber, the lower opening and the front opening, and after cooling the inside of the transformer, flows to the transformer storage chamber, A semiconductor power converter exhausted from the transformer storage chamber by an exhaust fan was obtained.

  In the semiconductor power conversion device of the present invention, in the first route, the cooling air exhausted from the semiconductor unit is exhausted while increasing the flow velocity at the upper opening, and the cooling air exists behind the semiconductor unit. It is preferable to cool by spraying so as to hit the outside of the transformer.

  In the power conversion device of the present invention, in the first route, a plate-shaped shielding portion is installed at a certain distance from the upper opening at a location where the transformer is not present behind the semiconductor unit. It is preferable that the flow of the cooling air is concentrated so that the cooling air flows along the shielding portion and hits the outside of the transformer while making the flow velocity of the cooling air ejected from the upper opening uniform. .

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor power converter device which employ | adopts the small and stable structure which cools a transformer and a semiconductor unit efficiently, and enlarges a capacity | capacitance and a voltage can be provided.

It is a front view of the semiconductor power converter of the form for carrying out the present invention. It is the internal structure figure which removed the exhaust fan, the door, and the control part door among the semiconductor power converters of the form for implementing this invention, and was seen from the front. It is the internal structure figure which removed the top plate and the exhaust fan from the semiconductor power converter of the form for carrying out the present invention, and was seen from the plane. It is the internal structure figure which removed the exhaust fan, the door, the semiconductor unit, and the control part door among the semiconductor power converters of the form for implementing this invention, and was seen from the front. It is the internal structure figure which removed the side wall among the semiconductor power converter devices of the form for implementing this invention, and was seen from the left side surface. FIG. 6A is an internal structure diagram viewed from the left side, and FIG. 6B is an internal structure diagram viewed from the front.

  Then, the semiconductor power converter device concerning the form for carrying out the present invention is explained below, referring to figures. First, the structure with which the semiconductor power converter device 1 of this form is provided is demonstrated. As shown in FIG. 1, the power conversion device 1 includes a housing 2, a control unit 3, an exhaust fan 4, a door 5, and an intake port 6.

  Two doors 5 are configured to be openable and closable on the front surface of the casing 2 which is a rectangular parallelepiped and is a robust structure. An intake port 6 opened in a grill shape is formed in front of these doors 5. An exhaust fan 4 that exhausts air from the inside of the semiconductor power conversion device 1 is disposed above the housing 2. When the exhaust fan 4 is operated, outside air is sucked into the semiconductor power conversion device 1 through the intake port 6 as cooling air, and exhausted from the exhaust fan 4 through first and second routes in the semiconductor power conversion device 1 described later. Is done.

  In addition, inside the semiconductor unit 7 as shown in FIGS. 2, 3, and 5, the transformer 8, the partition 10, the semiconductor unit storage chamber 11, and the transformer storage chamber 12 as shown in FIGS. 3 and 5. 3, 4, and 5, the partition portion 9 is provided, and the shield portion 13, the pedestal portion 14, and the wind tunnel 15 are provided as illustrated in FIG. 5.

  As shown in FIG. 1, the semiconductor power conversion device 1 has a control 3 disposed on the right side inside the housing 2 when viewed from the front. The control unit 3 includes a plurality of control devices. As shown in FIGS. 3, 4, and 5, the partition portion 9 is laid so as to partition the front and rear of the remaining internal space, thereby forming the semiconductor unit storage chamber 11 and the transformer storage chamber 12. As shown in FIGS. 2, 3, and 5, the internal configuration of the semiconductor power conversion device 1 includes five rows and three stages (particularly see FIG. 2) of semiconductor units 7 in the semiconductor unit storage chamber 11. The transformer 8 is disposed in the transformer storage chamber 12.

  As shown in FIG. 2, the semiconductor unit 7 includes cooling fins 7a and electrolytic capacitors 7b. The semiconductor unit 7 is a power conversion circuit including, for example, a semiconductor switching element such as an IGBT (insulated bipolar transistor), an electrolytic capacitor 7b, and other electronic elements that generate a large amount of heat, and this power conversion circuit is concentrated on the cooling fin 7a. It is attached to and unitized. The cooling fins 7a and the electrolytic capacitors 7b are disposed in flow paths (see FIG. 5), and cooling air passes through these flow paths. Such semiconductor units 7 are stacked in three stages and are accommodated over three phases of U, V, and W.

  A cooling fin opening 9 a and an electrolytic capacitor opening 9 b as shown in FIG. 4 are formed in the partition 9. The cooling fin opening 9a and the electrolytic capacitor opening 9b are upper openings of the present invention. The same number of cooling fin openings 9a and electrolytic capacitor openings 9b as the semiconductor units 7 (15 each in this embodiment) are formed. The cooling fin opening 9a and the electrolytic capacitor opening 9b allow the semiconductor unit storage chamber 11 and the transformer storage chamber 12 to communicate with each other, and cooling air flows therethrough. Cooling air taken in from the front air inlet 6 flows inside the semiconductor unit 7 of the semiconductor unit storage chamber 11, passes through the cooling fin opening 9 a and the electrolytic capacitor opening 9 b, and enters the transformer storage chamber 12. Flowing.

  In addition, a transformer primary winding opening 9c as shown in FIG. The transformer primary winding opening 9c is a lower opening of the present invention. Although mentioned later, it forms so that the front side opening part 10c of the partition 10 may be opposed.

  As shown in FIG. 5, in the transformer storage chamber 12, a transformer 8 is installed on the back side of the partition 9. The transformer 8 is supported on the lower side by the pedestal portion 14. The transformer 8 is, for example, a three-phase transformer, and a part of the iron core 8a is located on the upper side and the lower side. This transformer 8 is also a heat generating unit. Since the transformer 8 is heavy, it is disposed in the lower portion, and is disposed in the transformer storage chamber 12 on the back side because it does not require relatively maintenance.

  The partition 10 has an upper plate 10a, a vertical plate 10b, and a front opening 10c, and is partitioned by the partition 10 to form a wind tunnel 15 that is a space below the transformer. The vertical plate 10 b on the front side of the partition wall 10 faces (or contacts) the partition portion 9, and the end portion on the back surface side of the upper plate 10 a contacts the back inner wall of the housing 2. In addition, partition plates (not shown) are also formed on the left and right ends of the partition wall 10, and are used for partitioning the wind tunnel 15.

  The iron core 8 a of the transformer 8 is located in the wind tunnel 15. The upper plate 10a of the partition wall 10 is a partition plate that is attached in a planar direction directly below the winding, and a hole is formed in the upper plate 10a. This hole is, for example, a hole through which the iron core 8 a passes, and is a hole through which cooling air reaches the primary winding inside the transformer 8. There are three windings, U, V, and W, and holes are formed so as to reach each of them. The air taken in from the transformer primary winding opening 9c flows to the wind tunnel 15 through the front opening 10c, cools the lower iron core 8a, and the primary winding of the transformer 8 from the wind tunnel 15 through the hole. It passes through the inside, cools the upper iron core 8a, and finally flows to the transformer housing chamber 12.

  Next, the flow of cooling air will be described. The flow of the cooling air sucked into the semiconductor unit storage chamber 11 has two types, a first route indicated by a one-dot chain line arrow in FIG. 5 and a second route indicated by a broken line arrow.

  The first route is a route that flows on the upper side via the semiconductor unit 7. The cooling air taken in from the air inlet 6 of the front door 5 flows through the flow path in which the cooling fin portion 7a and the electrolytic capacitor portion 7b of the semiconductor unit 7 are arranged as indicated by the one-dot chain line arrow. Cool down. Then, the cooling air flows into the transformer housing chamber 12 through the cooling fin opening 9 a and the electrolytic capacitor opening 9 b of the partition 9. The inflowing cooling air cools the front side of the secondary winding of the transformer 8. And it goes around to the back side of transformer 8, and also cools the back side of a secondary winding. Then, the cooling air flows upward through the transformer housing chamber 12 while cooling the entire surface of the secondary winding, and is exhausted to the outside of the housing 2 through the exhaust fan 4 to be exhausted.

  Here, the cooling air discharged from the semiconductor unit 7 passes through the cooling fin opening 9 a and the electrolytic capacitor opening 9 b of the partition 9. These openings are holes having a relatively small cross-sectional area of the ventilation path, and the flow velocity of the cooling air is increased when passing, and the cooling air directly hits the surface of the secondary winding of the transformer 8. This fast flow of cooling air can efficiently remove heat and improve cooling efficiency.

  In the present embodiment, a shielding part 13 is provided. If the height of the transformer 8 is lower than the housing 2, if there is no shielding part 13, the cooling air discharged from the upper semiconductor unit 7 is directly exhausted without cooling the secondary winding of the transformer 8. The air is exhausted by the fan 4. In order to cool the transformer 8 efficiently, the cooling air discharged by the semiconductor unit 7 is desired to be injected toward the transformer 8 as much as possible. Therefore, a plate-shaped shielding portion 13 is provided to change the direction in which the cooling air flows, and to flow toward the transformer 8. Thereby, since all the cooling air which passes the opening part 9a for cooling fins and the opening part 9b for electrolytic capacitors cools the transformer 8, the cooling efficiency is improved.

  If there is no shielding part 13 behind the upper semiconductor unit 7, the cooling air passing through the upper cooling fin opening 9 a and the electrolytic capacitor opening 9 b has a higher wind speed than the middle and lower stages. Rises and a large amount of cooling air flows, which may deteriorate the cooling balance. In the present invention, since the plate-shaped shielding portion 13 that makes it difficult for the cooling air to flow is provided on the rear side of the upper semiconductor unit 7, it passes through all the upper and lower cooling fin openings 9a and the electrolytic capacitor openings 9b. It is made to function so that the wind speeds of the cooling air are equal, so that the cooling balance is not biased.

  The second route is a route that flows below without passing through the semiconductor unit 7. The cooling air taken in from the intake port 6 passes through the transformer primary winding opening 9c and the front opening 10c and flows into the wind tunnel 15 below the transformer. The lower iron core 8 a is cooled, the cooling air passes through the inside of the primary winding of the transformer 8 to cool it, the upper iron core 8 a is cooled, flows to the transformer housing chamber 12, and the housing through the exhaust fan 4. 2 is exhausted to the outside to exhaust heat. Since this cooling air does not pass through the semiconductor unit 7, it is unwarmed cooling air, and the primary winding inside the transformer 8 can be efficiently cooled.

  The semiconductor power conversion device 1 of the present invention has been described above. According to this semiconductor power conversion device 1, the semiconductor unit 7 and the transformer 8 are arranged in the front-rear direction and housed in the same housing 2. As a result, the device is particularly low in height and reduced in size, and even when the exhaust fan 4, the semiconductor unit 7 and the transformer 8 become large in size, the possibility of becoming unstable and falling down is reduced. It was realized.

  Moreover, according to this semiconductor power converter 1, the semiconductor unit 7 is cooled by the cold cooling air in the first route, and the transformer 8 is cooled by the cold cooling air in the second route. And the cooling effect of the transformer 8 increases and the increase in the capacity | capacitance or overload tolerance of the semiconductor power converter device 1 can be improved.

  In addition, the cooling air of the transformer 8 is divided into a first route for cooling the outside (secondary winding) of the transformer 8 and a second route for cooling the inside (primary winding) of the transformer 8. It is divided. In the first route, the heating is performed via the semiconductor unit 7, but the cooling speed is increased due to the passage through the cooling fin opening 9a and the electrolytic capacitor opening 9b having a narrow cross-sectional area of the ventilation path. The cooling efficiency of the secondary winding is improved by applying air to the secondary winding of the transformer 8. In the second route, the cooling air that cools the inside of the transformer 8 where the temperature is particularly likely to rise is efficiently exhausted to enhance the cooling effect of the primary winding.

  Further, the exhaust fan 4 and the intake port 6 for cooling the semiconductor unit 7 and the transformer 8 have a common configuration, so that cooling air can be efficiently introduced with a small number of parts, contributing to downsizing. .

  The semiconductor power conversion device of the present invention is a device that uses a transformer and a semiconductor unit, such as a converter that converts AC power into DC power, an inverter that converts DC power into AC power of a desired voltage and frequency, and the like. It can be applied to other devices and can be expected to be used in a wide range.

DESCRIPTION OF SYMBOLS 1: Semiconductor power converter 2: Case 3: Control part 4: Exhaust fan 5: Door 6: Intake port 7: Semiconducting unit 7a: Cooling fin 7b: Electrolytic capacitor 8: Transformer 8a: Iron core 9: Partition part 9a: Cooling fin opening 9b: Electrolytic capacitor opening 9c: Transformer primary winding opening 10: Partition 10a: Upper plate 10b: Front plate 10c: Front opening 11: Semiconductor unit storage chamber 12: Transformer Storage room 13: Shielding part 14: Pedestal part 15: Wind tunnel

Claims (3)

A housing having an internal space for accommodating the transformer and the semiconductor unit;
A partition part for partitioning the front and rear in the internal space so as to form a semiconductor unit storage chamber for storing the semiconductor unit on the front side and a transformer storage chamber for storing the transformer on the back side;
A partition portion disposed below the transformer storage chamber, accommodating a part of the lower side of the transformer, and forming a wind tunnel communicating with the inside of the transformer;
A front side opening formed in the partition;
An upper opening formed in the partition for communicating the semiconductor unit storage chamber and the transformer storage chamber;
A lower opening that is formed in the partition so as to face the front opening of the partition wall and communicates the semiconductor unit storage chamber and the wind tunnel;
An exhaust fan installed on the upper side of the casing and exhausting from the upper side of the transformer storage chamber;
The cooling air taken into the semiconductor unit storage chamber flows divided into a first route and a second route,
In the first route, it flows while passing through a flow path formed inside the semiconductor unit, flows through the upper opening, flows from the semiconductor unit storage chamber to the transformer storage chamber, After the outside is cooled, the exhaust fan exhausts the transformer storage room,
In the second route, it flows to the wind tunnel through the semiconductor unit storage chamber, the lower opening and the front opening, and after cooling the inside of the transformer, flows to the transformer storage chamber, A semiconductor power converter characterized in that it is exhausted from the transformer storage chamber by an exhaust fan. The semiconductor power conversion device according to claim 1,
In the first route, the cooling air exhausted from the semiconductor unit is exhausted while increasing the flow velocity at the upper opening, and the cooling air is injected so as to be applied to the outside of the transformer existing behind the semiconductor unit. And cooling the semiconductor power converter. The semiconductor power conversion device according to claim 2,
In the first route, a plate-shaped shielding portion is installed at a certain distance from the upper opening at a location where the transformer is not present behind the semiconductor unit, and cooling is performed from the upper opening. A semiconductor power conversion device that collects a flow of cooling air so as to flow outside the transformer while flowing the cooling air along the shielding portion while achieving a uniform air flow rate.

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