JP2016211010A - Electrolytic treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electrolytic treatment device capable of uniformly forming a metal film formed on the surface of a substrate.SOLUTION: Provided is an electrolytic treatment device comprising: a substrate holder 7 arranged with a substrate W at the inside of a treatment tank 1; an electrode 5 arranged at the inside of the treatment tank 1 so as to be confronted with the substrate W held to the substrate holder 7; an electric field shielding plate 12 arranged between the substrate W and the electrode 5 and having an opening part 12a; and an orbital translation motion mechanism 14 moving the opening part 12a on a circle orbit with the axial core of the substrate W as the center by translation motion of the electric field shielding plate 12 along the orbit. The orbital translation motion mechanism 14 allows translation motion of the electric field shielding plate 12 along the orbit, while the electric field shielding plate 12 covers a part of the outer circumferential face of the substrate W.SELECTED DRAWING: Figure 3

Description

  The present invention relates to an electrolytic processing apparatus for processing a substrate by passing an electric current through the processing solution while a substrate such as a wafer is immersed in a processing solution such as a plating solution or an etching solution.

  As an electrolytic processing apparatus for processing a substrate such as a wafer, an electrolytic plating apparatus and an electrolytic etching apparatus are known. An electroplating apparatus is a plating apparatus for plating the surface of a substrate with a metal by passing an electric current from the anode to the substrate while the anode and the substrate are immersed in a plating solution. The electrolytic etching apparatus is an etching apparatus that etches a metal film formed on the surface of a substrate by passing a current from the substrate to the cathode while the cathode and the substrate are immersed in an electrolytic solution (etching solution). Hereinafter, the electrolytic plating apparatus will be described.

  FIG. 25 is a schematic view showing a general electrolytic plating apparatus (hereinafter, the electrolytic plating apparatus is simply referred to as a plating apparatus). As shown in FIG. 25, the plating apparatus includes a plating tank 201. The plating tank 201 includes a storage tank 202 that stores a plating solution therein, and an overflow tank 203 that is disposed adjacent to the storage tank 202. The plating solution that overflows the side wall of the storage tank 202 flows into the overflow tank 203. One end of a plating solution circulation line 204 for circulating the plating solution is connected to the bottom of the overflow tank 203, and the other end is connected to the bottom of the storage tank 202. The plating solution flowing into the overflow tank 203 is returned to the storage tank 202 through the plating solution circulation line 204.

  Further, the plating apparatus attaches and detaches an anode 205 made of a metal such as copper, an anode holder 206 that holds the anode 205 and immerses the anode 205 in a plating solution in the storage tank 202, and a substrate W such as a wafer. A substrate holder 207 for holding the substrate W freely and immersing the substrate W in the plating solution in the storage tank 202 is provided. The anode 205 and the substrate W are disposed so as to face each other in the plating solution. The anode 205 is connected to the positive electrode of the power source 210 via the anode holder 206, and the substrate W is connected to the negative electrode of the power source 210 via the substrate holder 207. When a voltage is applied between the anode 205 and the substrate W, a current flows through the substrate W, and a metal film is formed on the surface of the substrate W.

  The plating apparatus further includes a stirring paddle 211 that stirs the plating solution and an electric field shielding plate 212 that adjusts the potential distribution on the substrate W. The electric field shielding plate 212 is arranged vertically and has an opening 212a that allows passage of the electric field in the plating solution. The stirring paddle 211 is arranged in the vicinity of the surface of the substrate W held by the substrate holder 207. The electric field shielding plate 212 is disposed between the stirring paddle 211 and the anode 205, and the stirring paddle 211 is disposed between the substrate W and the electric field shielding plate 212. The agitation paddle 211 is arranged vertically and agitates the plating solution by reciprocating in parallel with the substrate W, so that sufficient metal ions are uniformly supplied to the surface of the substrate W during plating of the substrate W. Can do.

  FIGS. 26A to 26C are diagrams showing the relationship between the thickness of the metal film formed on the substrate W and the electric field shielding rate. 26A to 26C, the horizontal axis indicates the distance from the center of the substrate W, and the vertical axis indicates the electric field shielding rate. As shown in FIG. 26A, when the substrate W is plated in a state where the electric field shielding plate 212 is not provided (that is, the electric field shielding rate is 0%), a lot of metal films are formed on the outer peripheral surface of the substrate W. It is formed. As a result, the thickness uniformity of the metal film is greatly impaired.

  As shown in FIG. 26B, when the substrate W is plated while the electric field shielding plate 212 covers the outer peripheral surface of the substrate W, the film thickness on the outer peripheral surface of the substrate W decreases, but the total thickness of the metal film. Cannot be made uniform. As shown in FIG. 26C, even if the electric field shielding plate 212 having a smaller opening 212a is used to widen the electric field shielding range on the substrate W, the film thickness cannot be made uniform.

  As a method for making the thickness of the metal film uniform, it is conceivable to continuously change the electric field shielding rate on the outer peripheral surface of the substrate W. Patent Literature 1 describes a plating apparatus including a shield disposed between an anode and a substrate. According to Patent Document 1, a shield that shields a part of the substrate is provided, and the electric field shielding area on the substrate is changed by relatively rotating the substrate and the shield. However, in particular, in the case of a vertical dip plating apparatus as shown in FIG. 25, it is generally difficult to rotate the substrate W, and it is necessary to rotate the shield. However, the rotating mechanism that rotates the shield in the plating tank is large, and the rotating mechanism of the shield itself blocks the electric field, which may hinder the formation of a uniform metal film.

  In addition, in order to continuously change the electric field shielding rate on the outer peripheral surface of the substrate W, an electric field shielding plate is constituted by a porous body having a continuously changed porosity, or the aperture ratio is continuously changed. It is conceivable to form an electric field shielding plate with a punching plate (see, for example, Patent Document 2). However, in order to form the electric field shielding plate in this way, an advanced processing technique is required, and the electric field shielding plate becomes expensive. Moreover, in order to implement | achieve appropriate electric field control for every kind of board | substrate, it is necessary to replace | exchange an electric field shielding board, and becomes a troublesome operation | work.

US Patent No. 6027631 JP-A-11-152600

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide an electrolytic treatment apparatus that can make a metal film formed on the surface of a substrate uniform.

  In order to achieve the above-described object, according to one embodiment of the present invention, a processing tank that stores a processing liquid therein, a substrate that holds the substrate, and the substrate that is placed in the processing tank, and the substrate holder An electrode disposed in the processing tank so as to face the substrate, a power source for applying a voltage between the substrate and the electrode, and an opening disposed between the substrate and the electrode. An electric field shielding plate having a portion, and an orbital translational movement mechanism that translates the electric field shielding plate along a circular orbit and moves the opening on a circular orbit around the axis of the substrate, The orbital translation mechanism is an electrolytic processing apparatus characterized in that the electric field shielding plate translates the electric field shielding plate along the circular orbit while covering a part of the outer peripheral surface of the substrate.

In a preferred aspect, the orbital translation mechanism is disposed outside the processing tank.
In a preferred aspect, the opening is circular.
In a preferred aspect, the opening is provided with a plurality of stirring rods for stirring the treatment liquid.

In a preferred aspect, the treatment tank is a plating tank that stores a plating solution therein.
In a preferred aspect, the treatment tank is an electrolytic etching tank for storing an electrolytic solution therein.

  According to the present invention, since the electric field shielding plate translates along the circular orbit while covering a part of the outer peripheral surface of the substrate, the electric field shielding rate on the outer peripheral surface of the substrate is increased according to the distance from the center of the substrate. Can do. Therefore, the electrolytic processing apparatus can make the metal film formed on the surface of the substrate uniform.

It is the schematic which shows the plating apparatus as an electrolytic treatment apparatus. It is the schematic which shows the electrolytic etching apparatus as an electrolytic treatment apparatus. It is an A line arrow directional view of FIG. It is the figure which looked at the plating apparatus shown in FIG. 1 from the top. It is a figure which shows operation | movement of an orbital translation mechanism. It is a figure which shows other embodiment of an orbital translational motion mechanism. It is a figure which shows the relative position of a board | substrate and an electric field shielding board when an electric field shielding board is translated along a circular track. It is a figure which shows the relationship between the film thickness of a metal film, and an electric field shielding rate when an electric field shielding plate is translated along a circular orbit. FIG. 9A and FIG. 9B are diagrams showing examples of the electric field shielding rate on the outer peripheral surface of the substrate. It is a top view which shows other embodiment of an orbital translation mechanism. It is a side view which shows an arm. It is a side view of an orbital translational movement mechanism. It is a figure which shows the orbital translational movement mechanism when a slider, a rotation motor, and an oblique axis move toward an arm. It is a top view which shows other embodiment of an orbital translation mechanism. It is a side view of the orbital translation mechanism shown in FIG. It is an enlarged view which shows the connection mechanism of a flexible shaft and a 1st connection shaft. It is a figure which shows an orbital translational motion mechanism when an eccentric pin and an arm move toward the rotating shaft center of a pipe shaft. FIG. 18A to FIG. 18C are diagrams showing changes in the electric field shielding rate and the electric field shielding range on the outer peripheral surface of the substrate. It is a figure which shows embodiment of the plating apparatus provided with the assist anode. It is a schematic diagram which shows the electric current which flows into a board | substrate from an assist anode. It is a figure which shows the some stirring rod arrange | positioned at the opening part of an electric field shielding board. It is a figure which shows the wet processing apparatus provided with the shielding board. It is a figure which shows the electroless-plating apparatus provided with the shielding board. It is a figure which shows the processing apparatus provided with the shielding board. It is the schematic which shows a general electrolytic plating apparatus. FIG. 26A to FIG. 26C are diagrams showing the relationship between the thickness of the metal film formed on the substrate and the electric field shielding rate.

Embodiments of the present invention will be described below with reference to the drawings. 1 to 24, the same or corresponding components are denoted by the same reference numerals, and redundant description is omitted.
FIG. 1 is a schematic view showing a plating apparatus as an electrolytic treatment apparatus. The plating apparatus includes a treatment tank (plating tank) 1. The processing tank 1 includes a storage tank 2 that stores a plating solution therein and an overflow tank 3 that is disposed adjacent to the storage tank 2. The plating solution overflowing the side wall 2 a of the storage tank 2 flows into the overflow tank 3. One end of a plating solution circulation line 4 for circulating the plating solution is connected to the bottom of the overflow tank 3, and the other end is connected to the bottom 2 b of the storage tank 2. The plating solution circulation line 4 is provided with a pump P, and the plating solution flowing into the overflow tank 3 is returned to the storage tank 2 through the plating solution circulation line 4 by the pump P.

  Further, the plating apparatus includes an anode 5 made of a metal such as copper, an anode holder 6 that holds the anode 5 and immerses the anode 5 in a plating solution in the storage tank 2, and a substrate W such as a wafer. A substrate holder 7 is provided that is detachably held and that immerses the substrate W in the plating solution in the storage tank 2. The anode 5 and the substrate W are arranged so as to face each other in the plating solution. The anode 5 is connected to the positive electrode of the power source 10 via the anode holder 6 and the positive electrode side electric wire 9, and the substrate W is connected to the negative electrode of the power source 10 via the substrate holder 7 and the negative electrode side electric wire 13. When a voltage is applied between the anode 5 and the substrate W, current flows from the anode 5 to the substrate W, and a metal film is formed on the surface of the substrate W.

  In the case of an electrolytic etching apparatus as an electrolytic processing apparatus (hereinafter, the electrolytic etching apparatus is simply referred to as an etching apparatus), a cathode 8 is disposed in the processing tank 1 instead of the anode 5 as shown in FIG. In the inside, an electrolytic solution (etching solution) is stored instead of the plating solution. In this case, the processing tank 1 is an electrolytic etching tank. The cathode 8 is connected to the negative electrode of the power source 10 via the negative electrode side electric wire 13, and the substrate W is connected to the positive electrode of the power source 10 via the positive electrode side electric wire 9. When a voltage is applied between the cathode 8 and the substrate W while the cathode 8 and the substrate W are immersed in the electrolytic solution, the current flows from the substrate W to the cathode 8, and the metal film formed on the surface of the substrate W is etched. Is done. The anode 5 and the cathode 8 are collectively referred to as electrodes, and the plating solution and the electrolytic solution are collectively referred to as processing solutions.

  As shown in FIG. 1, the plating apparatus includes a stirring paddle 11 for stirring the plating solution. The stirring paddle 11 is arranged in the vicinity of the surface of the substrate W held by the substrate holder 7 in the storage tank 2. The agitation paddle 11 reciprocates in parallel with the substrate W to agitate the plating solution, and sufficient metal ions can be uniformly supplied to the surface of the substrate W during plating of the substrate W.

  3 is a view taken in the direction of arrow A in FIG. As shown in FIGS. 1 and 3, the plating apparatus further includes an electric field shielding plate 12 that adjusts the potential distribution on the substrate W, and an orbital translation mechanism 14 that translates the electric field shielding plate 12 along the circular orbit. I have. The electric field shielding plate 12 has a rectangular shape, and has a circular opening 12a that allows passage of the electric field in the plating solution. The size of the opening 12a may be the same as, smaller than, or larger than the diameter of the substrate W. The stirring paddle 11 and the electric field shielding plate 12 are arranged vertically. The electric field shielding plate 12 is disposed between the substrate W and the anode 5. More specifically, the electric field shielding plate 12 is disposed between the stirring paddle 11 and the anode 5, and the stirring paddle 11 is disposed between the electric field shielding plate 12 and the substrate W.

  The orbital translation mechanism 14 is arranged outside the processing tank 1. The orbital translation mechanism 14 is configured to translate the electric field shielding plate 12 along a circular orbit and move the opening 12a of the electric field shielding plate 12 on a circular orbit centered on the axis of the substrate W. ing. The orbital translation mechanism 14 transmits an arm 15 fixed to the electric field shielding plate 12, a motor 16 as a driving device that moves the electric field shielding plate 12 via the arm 15, and a driving force of the motor 16 to the arm 15. And a driving force transmission mechanism 17. The arm 15 extends horizontally and is fixed to the upper part of the electric field shielding plate 12.

  The driving force transmission mechanism 17 is connected to the arm 15 and attached to the rotating shaft of the motor 16, a second pulley 19 connected to the arm 15, and between these pulleys 18, 19. And a belt 20 stretched over the belt. The pulleys 18 and 19 have the same diameter. The arm 15 is eccentrically attached to these pulleys 18 and 19. The arm 15 is connected to the first pulley 18 via the first joint 21 and is connected to the second pulley 19 via the second joint 22.

  FIG. 4 is a top view of the plating apparatus shown in FIG. In FIG. 4, the orbital translation mechanism 14 is omitted. As shown in FIGS. 3 and 4, a guide member 30 that restricts the movement of the electric field shielding plate 12 is provided in the storage tank 2. The guide member 30 is disposed so as to sandwich the outer end surface 12b of the electric field shielding plate 12, and is attached to the both side walls 2a and the bottom 2b of the storage tank 2. The guide member 30 guides the electric field shielding plate 12 so that the electric field shielding plate 12 moves (translates) in parallel with the surface of the substrate W.

  The electric field shielding plate 12 is separated from the side wall 2a and the bottom 2b of the storage tank 2. The guide member 30 extends inward from the side walls 2a and the bottom 2b of the storage tank 2. The outer end surface 12 b of the electric field shielding plate 12 does not move away from the guide member 30 when the electric field shielding plate 12 translates along the circular path. Therefore, the electric field passes only through the opening 12a of the electric field shielding plate 12, and does not pass through places other than the opening 12a.

  FIG. 5 shows the operation of the orbital translation mechanism 14. When the first pulley 18 is rotated by the motor 16 (see FIG. 3), the rotation of the first pulley 18 is transmitted to the second pulley 19 via the belt 20, and the second pulley 19 is the same in the same direction. Rotates at speed. In this way, by synchronizing the two pulleys 18 and 19 and rotating them in the same direction and at the same speed, the arm 15 can be translated along the orbit while maintaining the arm 15 horizontal.

  The orbital translation mechanism 14 does not rotate the electric field shielding plate 12 around the center of the substrate W, but translates the electric field shielding plate 12 along the orbit. Therefore, it is not necessary to arrange the orbital translation mechanism 14 itself in the processing tank 1. As shown in FIG. 3, the orbital translation mechanism 14 can be disposed outside the processing tank 1, so that a processing solution such as a plating solution does not contact the orbital translation mechanism 14, and the orbital translation mechanism 14 has a waterproof structure. There is no need. Further, the orbital translation mechanism 14 does not block the electric field.

  FIG. 6 is a view showing another embodiment of the orbital translation mechanism 14. As shown in FIG. 6, the driving force transmission mechanism 17 includes a first gear 25 attached to the rotation shaft of the motor 16, and a second gear 26 and a third gear 27 that mesh with the first gear 25. I have. The second gear 26 and the third gear 27 have the same number of teeth. The arm 15 is eccentrically attached to the gears 26 and 27. The arm 15 is connected to the second gear 26 via the first joint 23 and is connected to the third gear 27 via the second joint 24. By rotating the first gear 25, the gears 26 and 27 can be synchronously rotated in the same direction and at the same speed.

  FIG. 7 is a diagram showing a relative position between the substrate W and the electric field shielding plate 12 when the electric field shielding plate 12 is translated along the circular orbit. In FIG. 7, an imaginary line passing through the center of each substrate W shown in steps 1 to 4 is drawn.

  As shown in Steps 1 to 4 of FIG. 7, the electric field shielding plate 12 is translated along the orbit by the orbital translation mechanism 14. Specifically, the electric field shielding plate 12 translates along a circular orbit by a combination of the vertical and horizontal movements of the electric field shielding plate 12, and the opening 12a of the electric field shielding plate 12 has the axis of the substrate W as an axis. Move on a circular orbit with the center.

  Step 1 in FIG. 7 shows a state when the electric field shielding plate 12 moves upward. As shown in step 1 of FIG. 7, when the electric field shielding plate 12 moves upward, the lower outer peripheral surface of the substrate W is shielded by the electric field shielding plate 12 (see the mesh portion in step 1 of FIG. 7). Step 2 in FIG. 7 shows a state when the electric field shielding plate 12 moves in the right direction. As shown in step 2 of FIG. 7, when the electric field shielding plate 12 moves in the right direction, the left outer peripheral surface of the substrate W is shielded by the electric field shielding plate 12 (see the mesh portion in step 2 of FIG. 7). Step 3 in FIG. 7 shows a state where the electric field shielding plate 12 has moved downward. As shown in step 3 of FIG. 7, when the electric field shielding plate 12 moves downward, the upper outer peripheral surface of the substrate W is shielded by the electric field shielding plate 12 (see the mesh portion in step 3 of FIG. 7). Step 4 in FIG. 7 shows a state where the electric field shielding plate 12 has moved leftward. As shown in Step 4 of FIG. 7, when the electric field shielding plate 12 moves leftward, the right outer peripheral surface of the substrate W is shielded by the electric field shielding plate 12 (see the mesh portion of Step 4 of FIG. 7).

  As shown in Steps 1 to 4 in FIG. 7, the electric field shielding plate 12 translates along a circular orbit while covering a part of the outer peripheral surface of the substrate W. Since the shielded portion of the substrate W moves with the translational movement of the electric field shielding plate 12, the electric field shielding rate on the outer peripheral surface of the substrate W can be continuously changed. As a result, the metal film can be uniformly formed on the surface of the substrate W.

  FIG. 8 is a diagram showing the relationship between the thickness of the metal film and the electric field shielding rate when the electric field shielding plate 12 is translated along the circular orbit. The arrow of FIG. 8 has shown the movement range of the electric field shielding board 12 at the time of translation. As shown in FIG. 8, the electric field shielding plate 12 is translated along the circular orbit while covering a part of the outer peripheral surface of the substrate W, thereby continuously changing the electric field shielding rate on the outer peripheral surface of the substrate W. be able to.

  By changing the shape of the opening 12a of the electric field shielding plate 12, the electric field shielding rate on the outer peripheral surface of the substrate W can be changed. For example, as shown in FIG. 9A, the electric field shielding plate 12 is translated along the circular orbit while forming the opening 12a in a saw-like shape or changing the size of the opening 12a. As described above, the electric field shielding rate can be changed stepwise, or the electric field shielding rate can be changed based on a predetermined curvature as shown in FIG. 9B.

  By changing the pulleys 18 and 19 shown in FIG. 3 to those having different distances between the rotation shaft of the pulley and the first joint 21 and the second joint 22, the diameter of the orbit of the electric field shielding plate 12 is changed. Is possible. Alternatively, the diameters of the orbits of the electric field shielding plate 12 are changed by replacing the gears 26 and 27 shown in FIG. 6 with different distances between the rotation shaft of the gear and the first joint 23 and the second joint 24. It is possible. When the diameter of the orbit of the electric field shielding plate 12 changes, the electric field shielding range on the outer peripheral surface of the substrate W by the electric field shielding plate 12 changes. Therefore, the electric field can be controlled more appropriately according to the type of the substrate.

  According to the embodiment described below, the diameter of the orbit of the electric field shielding plate 12 can be changed during the plating of the substrate W. FIG. 10 is a top view showing still another embodiment of the orbital translation mechanism 14. As shown in FIG. 10, the orbital translation mechanism 14 includes an arm 15 fixed to the upper part of the electric field shielding plate 12, two oblique shafts 70 extending through the arm 15, and the two oblique shafts 70. , And two pulleys 75 and a belt 76 as a synchronizing mechanism for synchronizing the rotation of the two oblique shafts 70. The two pulleys 75 have the same diameter.

  The two pulleys 75 are fixed to the two oblique shafts 70, respectively. The belt 76 is hung on two pulleys 75. One of the two oblique shafts 70 is connected to a rotary motor 72, and the other oblique shaft 70 is rotatably supported by two bearings 77. The bearing 77 and the rotary motor 72 are installed on the installation plate 78. When the rotary motor 72 rotates one oblique shaft 70, the rotation of the oblique shaft 70 is transmitted to the other oblique shaft 70 by the pulley 75 and the belt 76. Accordingly, the two oblique shafts 70 rotate at the same speed in the same direction.

  FIG. 11 is a side view of the arm 15. In FIG. 11, the oblique axis 70 is not shown. Two spherical bearings 64 are fixed to the arm 15. Each spherical bearing 64 includes a spherical inner ring 68 having a through hole 68a through which the oblique shaft 70 passes, and an outer ring 69 that rotatably supports the inner ring 68. In the present embodiment, the two spherical bearings 64 are embedded in the arm 15.

  FIG. 12 is a side view of the orbital translation mechanism 14. The orbital translation mechanism 14 includes a moving device 74 that moves the rotary motor 72 and the oblique shaft 70 toward and away from the arm 15 (and the spherical bearing 64). The moving device 74 includes a stepping motor 81, a ball screw shaft 82 connected to the stepping motor 81, and a slider 73 in which a ball screw nut (not shown) with which the ball screw shaft 82 engages is disposed. ing. The slider 73 is supported by a linear guide 79 so as to move in a linear direction along the rotational axis CA of the oblique shaft 70. The oblique shaft 70 is bent at a predetermined angle with respect to the rotation axis CA, and extends through the through hole 68 a of the spherical bearing 64. The diameter of the through hole 68 a is slightly larger than the diameter of the oblique axis 70. The oblique shaft 70 further extends toward the rotational axis CA outside the spherical bearing 64, and the end of the oblique shaft 70 is supported by the bearing 65. The end of the oblique shaft 70 is located on the rotational axis CA.

  The rotation motor 72 is installed on an installation plate 78 fixed to the slider 73. The stepping motor 81 and the linear guide 79 are installed on the base 85. The ball screw shaft 82 extends perpendicularly to the arm 15, that is, parallel to the rotational axis CA of the oblique shaft 70 and passes through the slider 73. The slider 73, the rotary motor 72, and the oblique shaft 70 can be moved by the linear guide 79 along the rotational axis CA of the oblique shaft 70 (that is, in a direction perpendicular to the arm 15).

  When the stepping motor 81 rotates the ball screw shaft 82 in one direction, the slider 73, the rotation motor 72, and the oblique shaft 70 move away from the arm 15 (and the spherical bearing 64). When the stepping motor 81 rotates the ball screw shaft 82 in the opposite direction, the slider 73, the rotary motor 72, and the oblique shaft 70 move toward the arm 15 (and the spherical bearing 64) as shown in FIG. Guide members 71 are provided on both sides of the arm 15. The guide member 71 limits the movement of the arm 15 in the direction of the rotational axis CA of the oblique shaft 70 while allowing the translational motion of the arm 15.

  As shown in FIGS. 12 and 13, when the rotary motor 72 and the oblique shaft 70 move relative to the arm 15 and the spherical bearing 64, the arm 15 and the spherical bearing 64 are perpendicular to the rotational axis CA of the oblique shaft 70. Move in any direction. Therefore, the distance from the rotational axis CA of the oblique axis 70 to the arm 15 and the spherical bearing 64 changes.

  In FIG. 12, the distance from the rotational axis CA of the oblique shaft 70 to the center of the spherical bearing 64 is R1. Therefore, when the oblique axis 70 rotates in this state, the electric field shielding plate 12 held by the arm 15 translates while drawing a circular orbit having a radius R1. In FIG. 13, the distance from the rotational axis CA of the oblique shaft 70 to the center of the spherical bearing 64 is R2. Therefore, when the oblique shaft 70 rotates in this state, the electric field shielding plate 12 held by the arm 15 moves in a translational manner with a circular orbit having a radius R2. In this way, the diameter (radius) of the orbit of the electric field shielding plate 12 can be changed during the plating of the substrate W by driving the moving device 74 to move the rotary motor 72 and the oblique shaft 70.

  The two oblique shafts 70 are rotated in synchronism in the same direction at the same speed by the pulley 75 and the belt 76 shown in FIG. Therefore, the arm 15 and the electric field shielding plate 12 can translate while maintaining a horizontal posture.

  FIG. 14 is a diagram showing another embodiment of the orbital translation mechanism 14. In FIG. 14, the configuration that is not particularly described is the same as the configuration of the embodiment illustrated in FIGS. 10 to 13, and thus redundant description thereof is omitted. The orbital translation mechanism 14 according to the present embodiment includes two L-shaped pipe shafts 108 and a rotary motor 90 connected to one of the two pipe shafts 108 via a torque transmission mechanism 94. I have. Each pipe shaft 108 is rotatably supported by two bearings 77. The bearing 77 and the rotary motor 90 are installed on the installation plate 78.

  A pulley 75 is fixed to each of the two pipe shafts 108, and the belt 76 is hooked on the two pulleys 75. When the rotary motor 90 rotates one pipe shaft 108, the rotation of the pipe shaft 108 is transmitted to the other pipe shaft 108 by the pulley 75 and the belt 76. Accordingly, the two pipe shafts 108 rotate at the same speed in the same direction.

  FIG. 15 is a side view of the orbital translation mechanism 14 shown in FIG. In FIG. 15, the bearing 77, the pulley 75, and the belt 76 are not shown. The orbital translation mechanism 14 includes a flexible shaft 107 disposed in the pipe shaft 108, a first connection shaft 105 connected to one end of the flexible shaft 107, and a second connection shaft connected to the other end of the flexible shaft 107. 106 and an eccentric pin 110 fixed to the second connecting shaft 106. The eccentric pin 110 is rotatably supported by a bearing 115 fixed to the arm 15.

  The rotation motor 90 is fixed to the installation plate 78 via a member (not shown). The rotary motor 90 is coupled to the pipe shaft 108 via a first gear 94A and a second gear 94B that constitute the torque transmission mechanism 94. The first gear 94A is fixed to the rotary motor 90, and the second gear 95B is fixed to the outer peripheral surface of the pipe shaft 108. The second gear 95B and the pipe shaft 108 are disposed concentrically. When the rotary motor 90 is driven, the pipe shaft 108 rotates via the first gear 94A and the second gear 95B.

  A part of the first connection shaft 105, a part of the second connection shaft 106, and the entire flexible shaft 107 are arranged in the pipe shaft 108. The first connection shaft 105 and the second connection shaft 106 are perpendicular to each other. That is, the first connection shaft 105 is on the rotation axis CL of the pipe shaft 108, and the second connection shaft 106 is perpendicular to the rotation axis CL of the pipe shaft 108. The flexible shaft 107 can be freely bent and is movably accommodated in the pipe shaft 108.

  The first connecting shaft 105 is fixed to a movable block 101 that is movably supported by a linear guide 79. The orbital translation mechanism 14 further includes a moving device 74 that moves the movable block 101 and the first connecting shaft 105 in a direction toward and away from the arm 15. The movable block 101 is installed on an installation plate 78 fixed to the slider 73. The slider 73 is supported by a linear guide 79 so that it can move linearly in parallel with the rotational axis CL of the pipe shaft 108. The pipe shaft 108 is bent at a right angle with respect to the rotation axis CL. When the stepping motor 81 rotates the ball screw shaft 82, the first connection shaft 105 moves on the rotation axis CL of the pipe shaft 108 (that is, in a direction perpendicular to the arm 15).

  FIG. 16 is an enlarged view showing a coupling mechanism between the flexible shaft 107 and the first coupling shaft 105. As shown in FIG. 16, the first connecting shaft 105 has a ball portion 105a having a spherical surface at its end, and the flexible shaft 107 has a ball receiving portion 107a surrounding the ball portion 105a at its end. Have. The ball receiving portion 107a has a spherical concave surface.

  The connecting mechanism including the ball portion 105a and the ball receiving portion 107a can keep the first connecting shaft 105 from rotating while allowing the flexible shaft 107 to rotate. Therefore, when the rotary motor 90 is driven, the pipe shaft 108, the flexible shaft 107, the second connection shaft 106, and the eccentric pin 110 rotate integrally, but the first connection shaft 105 does not rotate. The ball receiving portion 107 a surrounds the ball portion 105 a so that the first connecting shaft 105 does not separate from the flexible shaft 107. Although not shown, the flexible shaft 107 and the second connecting shaft 106 are similarly connected by a connecting mechanism including a ball portion and a ball receiving portion.

  When the stepping motor 81 rotates the ball screw shaft 82 in one direction, the first connecting shaft 105 pushes the flexible shaft 107 toward the arm 15, and the flexible shaft 107 moves in the pipe shaft 108. Since the position of the pipe shaft 108 is fixed, the flexible shaft 107 moves relative to the pipe shaft 108, and the flexible shaft 107 pushes the second connecting shaft 106. As a result, the eccentric pin 110 and the arm 15 move away from the rotational axis CL of the pipe shaft 108. When the stepping motor 81 rotates the ball screw shaft 82 in the opposite direction, the first connecting shaft 105 pulls the flexible shaft 107 and the flexible shaft 107 pulls the second connecting shaft 106 as shown in FIG. As a result, the eccentric pin 110 and the arm 15 move toward the rotation axis CL of the pipe shaft 108.

  As shown in FIGS. 15 and 17, when the first connecting shaft 105, the flexible shaft 107, and the second connecting shaft 106 move relative to the pipe shaft 108, the eccentric pin 110 and the arm 15 move to the pipe shaft 108. It moves in a direction perpendicular to the rotation axis CL. As a result, the distance from the rotational axis CL of the pipe shaft 108 to the eccentric pin 110 and the arm 15 changes.

  In FIG. 15, the distance from the rotation axis CL of the pipe shaft 108 to the eccentric pin 110 is R3. Therefore, when the eccentric pin 110 rotates around the rotational axis CL of the pipe shaft 108 in this state, the electric field shielding plate 12 held by the arm 15 translates while drawing a circular orbit having a radius R3. In FIG. 17, the distance from the rotation axis CL of the pipe shaft 108 to the eccentric pin 110 is R4. Therefore, when the eccentric pin 110 rotates around the rotation axis CL of the pipe shaft 108 in this state, the electric field shielding plate 12 held by the arm 15 translates while drawing a circular orbit having a radius R4. Thus, the diameter (radius) of the orbit of the electric field shielding plate 12 during the plating of the substrate W by driving the moving device 74 to move the first connecting shaft 105, the flexible shaft 107, and the second connecting shaft 106. ) Can be changed.

  Changes in the electric field shielding rate and the electric field shielding range on the outer peripheral surface of the substrate W when the diameter of the orbit of the electric field shielding plate 12 is changed will be described with reference to FIGS. 18 (a) to 18 (c). 18A to 18C are diagrams showing changes in the electric field shielding rate and the electric field shielding range on the outer peripheral surface of the substrate W. FIG. As shown in FIG. 18A, when the electric field shielding plate 12 is translated in the first orbit, the electric field shielding range is narrow, and the electric field shielding rate on the outer peripheral surface of the substrate W changes sharply. On the other hand, as shown in FIG. 18B, when the electric field shielding plate 12 is translated in a second orbit having a diameter larger than that of the first orbit, the electric field shielding range is as shown in FIG. The electric field shielding ratio on the outer peripheral surface of the substrate W changes gently.

  FIG. 18C shows the electric field shielding rate when the circuit track of the electric field shielding plate 12 is switched from the first circuit track to the second circuit track during the plating of the substrate W. In this case, as shown in FIG. 18C, the electric field shielding rate changes sharply in a wide electric field shielding range. As described above, by changing the orbit during the plating of the substrate W, the terminal film (a phenomenon in which the metal film is deposited thick around the power supply terminal in contact with the outer peripheral surface of the wafer) is likely to appear. It can be formed uniformly.

  The electric field shielding plate 12 may include an assist anode for intensively plating the outer peripheral surface of the substrate W. FIG. 19 is a view showing an embodiment of a plating apparatus provided with the assist anode 40. FIG. 20 is a schematic diagram showing a current flowing from the assist anode 40 to the substrate W. The assist anode 40 is formed in an annular shape and has an outer diameter substantially the same as the diameter of the substrate W. The assist anode 40 is attached to the side surface (side surface facing the substrate W) of the electric field shielding plate 12, and is connected to the positive electrode side electric wire 9 via the auxiliary electric wire 41. A variable resistor 42 is attached to the auxiliary electric wire 41, and the magnitude of the current supplied to the assist anode 40 by the variable resistor 42 can be adjusted.

  When a voltage is applied between the anode 5 and the substrate W, current flows from the assist anode 40 to the substrate W (see the arrow in FIG. 20), and the outer peripheral surface of the substrate W is preferentially plated. The thickness of the metal film deposited on the outer peripheral surface of the substrate W can be changed according to the magnitude of the current supplied to the assist anode 40.

  As shown in FIG. 21, a plurality of stirring bars 31 may be disposed in the opening 12 a of the electric field shielding plate 12. In the present embodiment, the stirring paddle 11 can be omitted. The electric field shielding plate 12 provided with a plurality of stirring rods 31 can stir the plating solution in the storage tank 2 along with the translational motion along the circumferential path. In FIG. 21, the plurality of stirring bars 31 extend in the vertical direction, but the stirring bars 31 may extend in the horizontal direction, or the stirring bars 31 may have a lattice shape.

  According to the embodiment shown in FIG. 21, since the stirring paddle 11 can be omitted, the electric field shielding plate 12 can be disposed in the vicinity of the surface of the substrate W. Therefore, downsizing of the plating apparatus can be achieved, and further, the stirring effect by the stirring rod 31 and the electric field shielding effect by the electric field shielding plate 12 can be further improved. In order to exert the stirring effect by the stirring rod 31 to the outer peripheral surface of the substrate W, the size of the opening 12a of the electric field shielding plate 12 may be made larger than the diameter of the substrate W.

  Although the embodiment of the present invention has been described so far, the present invention is not limited to the above-described embodiment, and it is needless to say that the present invention may be implemented in various different forms within the scope of the technical idea.

  For example, the shielding plate 12 can be used in a cleaning apparatus, a coating apparatus, and a chemical processing apparatus as a spin-type wet processing apparatus. FIG. 22 is a view showing a wet processing apparatus provided with the shielding plate 12. As shown in FIG. 22, the wet processing apparatus rotates the holding table 50 that holds the substrate W horizontally, and supplies a fluid such as a chemical solution or a cleaning solution to the substrate W from the processing head 51 located above the substrate W. It is configured.

  In the case of a wet processing apparatus that does not include the shielding plate 12, it is difficult to continuously change the flow rate distribution on the outer peripheral surface of the substrate W even if a fluid is supplied from the processing head 51 to the substrate W. In the example shown in FIG. 22, the shielding plate 12 is disposed between the substrate W and the processing head 51 so that the shielding plate 12 is parallel to the surface of the substrate W, and the shielding plate 12 is translated along the circular orbit. Let Due to the translational movement of the shielding plate 12, the flow rate distribution of the fluid supplied to the surface of the substrate W can be controlled together with the action due to the rotation of the holding table 50.

  Moreover, the shielding board 12 can be used for an electroless plating apparatus. FIG. 23 is a view showing an electroless plating apparatus provided with the shielding plate 12. The electroless plating apparatus shown in FIG. 23 is a dip-type electroless plating apparatus for plating the substrate W by immersing the substrate W in an electroless plating solution in the treatment tank 54. The shielding plate 12 is disposed vertically between the substrate W and the processing head 55, and translates along the orbit. By the translational movement of the shielding plate 12, the supply distribution of the electroless plating solution sprayed from the processing head 55 onto the surface of the substrate W can be controlled.

  The shielding plate 12 can also be used in a processing apparatus such as a plasma processing apparatus, a sputtering apparatus, and a CVD (Chemical Vapor Deposition) apparatus. FIG. 24 is a diagram illustrating a substrate processing apparatus including the shielding plate 12. The substrate processing apparatus includes a substrate W mounted on a mounting table 58 in a chamber 56 and a processing head 57 disposed above the substrate W. The shielding plate 12 is disposed between the processing head 57 in the chamber 56 and the substrate W so as to be parallel to the substrate W. The supply distribution of fluid such as processing gas ejected from the processing head 57 can be controlled by causing the shielding plate 12 to translate along the orbit.

1,54,201 Treatment tank (plating tank)
DESCRIPTION OF SYMBOLS 2,202 Storage tank 2a Side wall 2b Bottom part 3,203 Overflow tank 4,204 Plating solution circulation line 5,205 Anode 6,206 Anode holder 7,207 Substrate holder 8 Cathode 9 Positive side electric wire 10,210 Power supply 11, 211 Stir paddle 12, 212 Electric field shielding plates 12a, 212a Opening portion 12b Outer end surface 13 Negative side electric wire 14 Orbital translational motion mechanism 15 Arm 16 Motor (drive device)
17 Driving force transmission mechanism 18 First pulley 19 Second pulley 20 Belts 21, 23 First joints 22, 24 Second joint 25 First gear 26 Second gear 27 Third gear 30 Guide member 31 Stirring rod 40 Assist anode 41 Auxiliary wire 42 Variable resistor 50 Holding table 51, 55, 57 Processing head 56 Chamber 58 Mounting table 64 Spherical bearing 68 Inner ring 69 Outer ring 70 Oblique shaft 71 Guide member 72 Rotating motor 73 Slider 74 Moving device 75 Pulley 76 Belt 77 Bearing 78 Installation plate 79 Linear guide 81 Stepping motor 82 Ball screw shaft 85 Base 90 Rotating motor 94 Torque transmission mechanism 101 Movable block 105 First connection shaft 106 Second connection shaft 107 Flexible shaft 110 Eccentric pin 115 Bearing

Claims (6)

A treatment tank for storing the treatment liquid therein;
A substrate holder for holding the substrate and arranging the substrate in the processing tank;
An electrode disposed in the processing tank so as to face the substrate held by the substrate holder;
A power supply for applying a voltage between the substrate and the electrode;
An electric field shielding plate having an opening disposed between the substrate and the electrode;
An orbital translation mechanism that translates the electric field shielding plate along a circular orbit and moves the opening on a circular orbit about the axis of the substrate;
The orbital translational motion mechanism is an electrolytic processing apparatus characterized in that the electric field shielding plate translates the electric field shielding plate along the circular orbit while covering a part of the outer peripheral surface of the substrate.   The electrolytic processing apparatus according to claim 1, wherein the orbital translational movement mechanism is disposed outside the processing tank.   The electrolytic processing apparatus according to claim 1, wherein the opening is circular.   The electrolytic processing apparatus according to claim 1, wherein a plurality of stirring rods for stirring the processing liquid are disposed in the opening.   The electrolytic treatment apparatus according to claim 1, wherein the treatment tank is a plating tank that stores a plating solution therein.   The electrolytic treatment apparatus according to claim 1, wherein the treatment tank is an electrolytic etching tank that stores an electrolytic solution therein.

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